Meetings & Events

 

2015 MRS Spring Meeting Logo2015 MRS Spring Meeting & Exhibit

April 6-10, 2015 | San Francisco
Meeting Chairs: Artur Braun, Hongyou Fan, Ken Haenen, Lia Stanciu, Jeremy A. Theil



Symposium CC : Reliability and Materials Issues of Semiconductorsmdash;Optical and Electron Devices and Materials

2015-04-07   Show All Abstracts

Symposium Organizers

Robert Herrick, Silicon Photonics Org Intel Corp
Hideto Miyake, Mie University
Tomas Palacios, Massachusetts Institute of Technology
Kenji Shiojima, University of Fukui
Osamu Ueda, Kanazawa Institute of Technology
CC3: Organic LED Reliability
Session Chairs
Osamu Ueda
Hiroshi Fujioka
Tuesday PM, April 07, 2015
Moscone West, Level 2, Room 2016

2:30 AM - CC3.01
Metal Electromigration through Transparent Conductors - Monitoring an OLED Failure Mechanism

Robert Abbel 1 Jasper Michels 2 Linda van de Peppel 1 Jeroen van den Brand 1 Pim Groen 1 3

1Holst Centre - TNO Eindhoven Netherlands2Max-Planck-Institut fuuml;r Polymerforschung Mainz Germany3Delft University of Technology Delft Netherlands

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2:45 AM - CC3.02
Reliability Study of Organic Light-Emitting Diodes by Continuous-Wave and Pulsed Current Stressing

Xiaomeng Li 1 Rajeev Acharya 1 Yiqiang Zhang 1 Xian-an Cao 1

1West Virginia Univ Morgantown United States

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3:00 AM - CC3.03
Intrinsic Degradation Mechanism of Organic Light Emitting Diodes

Quan Niu 1 Paul W. Blom 1 Irina Craciun 1

1Max Planck Institute for Polymer Research Mainz Germany

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3:15 AM - CC3.04
Resolving the Missing Knowledge of OLED Degradation: The Origin of Black Spots

Hylke B. Akkerman 1 Tim Ellis 1 Jie Shen 1 Pim Groen 1

1Holst Centre Eindhoven Netherlands

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3:30 AM - CC3.05
Improving Air Stability in Organic Opto-Electronic Devices Using MoS2 and WS2 Synthesized by Chemical Vapor Deposition

Seungo Gim 1 Ki Chang Kwon 2 Soo Young Kim 2 Jong-Lam Lee 1

1POSTECH Pohang Korea (the Republic of)2Chung-Ang University Seoul Korea (the Republic of)

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3:45 AM -
BREAK

CC4: Nitride HEMT Transistor Reliability and Degradation
Session Chairs
Carl Thompson
Kenji Shiojima
Tuesday PM, April 07, 2015
Moscone West, Level 2, Room 2016

4:15 AM - *CC4.01
Electrical Characterization of Gate Traps in FETs with Ge and III-V Channels

Xiao Sun 1 Jie Yang 1 Shufeng Ren 1 T.P. Ma 1

1Yale University New Haven United States

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4:45 AM - *CC4.02
Correlation of Physical and Electrical Degradation of AlGaN/GaN High Electron Mobility Transistor

Carl Thompson 1

1Massachusetts Institute of Technology Cambridge United States

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5:15 AM - CC4.03
Role of Dislocation Induced Off-State Gate Leakage in Drain Current Dispersion in Fresh and Stressed AlGaN/GaN Heterostructure Field Effect Transistors

Saptarsi Ghosh 1 Apurba Chakraborty 1 Syed Mukulika Dinara 1 Sanjay Kumar Jana 1 Ankush Bag 1 Partha Mukhopadhyay 1 Subhashis Das 1 Dhrubes Biswas 1

1Indian Institute of Technology Kharagpur Khargapur India

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5:30 AM - CC4.04
Trapping Characteristics and Parametric Shifts in Lateral GaN HEMTs with SiO2/AlGaN Gate Stacks

Michael Patrick King 1 Daniel Piedra 2 Jeramy Dickerson 1 Sandeepan DasGupta 1 Min Sun 2 Matthew Marinella 1 Tomas Palacios 2 Robert J. Kaplar 1

1Sandia National Labs Albuquerque United States2MIT Cambridge United States

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5:45 AM - CC4.05
Proton Irradiation Effects on Deep Level States in P-Type GaN

Zeng Zhang 1 Aaron R. Arehart 1 Erin C. H. Kyle 2 Jin Chen 3 En Xia Zhang 3 Daniel M. Fleetwood 3 Ronald D Schrimpf 3 James S. Speck 2 Steven A. Ringel 1

1The Ohio State University Columbus United States2University of California Santa Barbara Santa Barbara United States3Vanderbilt University Nashville United States

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CC1: Semiconductor Laser Reliability
Session Chairs
Robert Herrick
Michael Salmon
Tuesday AM, April 07, 2015
Moscone West, Level 2, Room 2016

9:00 AM - *CC1.01
Reliability Requirements for VCSELs in Engineered Computer Systems

David Mcelfresh 1 John e Cunningham 1 Xuezhe Zheng 1 Ashok Krishnamoorthy 1 Kannan Raj 1

1Oracle San Diego United States

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9:30 AM - *CC1.02
InGaN-Based Laser Diodes: Physical Origin of Gradual and Catastrophic Degradation

Matteo Meneghini 1 Carlo De Santi 1 Gaudenzio Meneghesso 1 Enrico Zanoni 1

1University of Padova, Department of Information Engineering Padova (PD) Italy

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10:00 AM - CC1.03
About the Role of the Thermal Conductivity of the Laser Structure in the Catastrophic Optical Degradation of High Power Laser Diodes

Jorge Souto 1 Jose Luis Pura 1 Juan Jimenez 1

1Universidad de Valladolid Valladolid Spain

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10:15 AM - CC1.04
Reliability and Degradation Mechanisms in High Power Broad-Area InGaAs-AlGaAs Strained Quantum Well Lasers

Yongkun Sin 1 Nathan Presser 1 Stephen LaLumondiere 1 Miles Brodie 1 Neil Ives 1 Brendan Foran 1 William Lotshaw 1 Steven C. Moss 1

1The Aerospace Corporation El Segundo United States

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10:30 AM -
BREAK

CC2: III-V LED Reliability
Session Chairs
Matteo Meneghini
Robert Herrick
Tuesday AM, April 07, 2015
Moscone West, Level 2, Room 2016

11:00 AM - *CC2.01
Evaluation of GaN Epitaxial Layers Grown on Free-Standing GaN Substrates by Fabrications of p-n Diodes

Tomoyoshi Mishima 1 Tohru Nakamura 1 Kazuki Nomoto 2

1Hosei University Tokyo Japan2University of Notre Dame Notre Dame United States

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11:30 AM - *CC2.02
Development of High Reliability Large Area Light Emitting Devices

Hiroshi Fujioka 1 2 Kohei Ueno 1 Atsushi Kobayashi 1 Jitsuo Ohta 1

1The University of Tokyo Tokyo Japan2JST Chiyoda-ku Japan

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12:00 PM - CC2.03
Reliability and Lifetime of Pseudomorphic UVC LEDs on AlN Substrates at Accelerated Conditions

James Grandusky 1 Ken Kitamura 1 Craig G. Moe 1 Masato Toita 1 Leo Schowalter 1

1Crystal IS Green Island United States

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12:15 PM - CC2.04
Influence of Thermal Cleaning on the Surface of Free-Standing GaN Substrates

Shunsuke Okada 1 Hideto Miyake 1 Kazumasa Hiramatsu 1 Reina Miyagawa 2 Osamu Eryu 2 Tamotsu Hashizume 3

1Mie University Tsu City Japan2Nagoya Institute of Technology Nagoya city Japan3Hokkaido University Sapporo City Japan

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12:30 PM - CC2.05
Current and Temperature Stressed Degradation of (InAlGa)N-Based UV-B LEDs

Johannes Glaab 1 Christian Ploch 1 Rico Kelz 1 Christoph Stoelmacker 1 Mikael Lapeyrade 1 Neysha Lobo-Ploch 1 Jens Rass 1 Tim Kolbe 1 Sven Einfeldt 1 Frank Mehnke 3 Christian Kuhn 3 Tim Wernicke 3 Markus Weyers 2 Michael Kneissl 3 1

1Ferdinand-Braun-Institut, Leibniz-Institut fuuml;r Hoechstfrequenztechnik Berlin Germany2Ferdinand-Braun-Institut, Leibniz-Institut fuuml;r Hoechstfrequenztechnik Berlin Germany3Technical University Berlin Berlin Germany

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12:45 PM - CC2.06
Sulfuration Resistance Study on the Ag and Ag-Pd Reflectors of GaN-Based LEDs

Yan-Hao Chen 1 Cheng-yi Liu 1

1National Central University Zhongli City Taiwan

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2015-04-08   Show All Abstracts

Symposium Organizers

Robert Herrick, Silicon Photonics Org Intel Corp
Hideto Miyake, Mie University
Tomas Palacios, Massachusetts Institute of Technology
Kenji Shiojima, University of Fukui
Osamu Ueda, Kanazawa Institute of Technology
CC7: InGaN and AlGaN Material Growth
Session Chairs
Hideto Miyake
Shigetaka Tomiya
Wednesday PM, April 08, 2015
Moscone West, Level 2, Room 2016

2:30 AM - *CC7.01
Advanced Characterization Techniques in InGaN-Based Light-Emitting Diodes (LEDs)

Jon-In Shim 1 Dong-Soo Shin 2

1Hanyang University Ansan Korea (the Republic of)2Hanyang University Ansan Korea (the Republic of)

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3:00 AM - *CC7.02
Semi-Polar GaN Growth on Patterned (001)Si Substrate by MOVPE

Yoshio Honda 2 M. Kushimoto 2 Hiroshi Amano 1

1Nagoya University Nagoya Japan2Nagoya University, Akasaki Research Center Nagoya Japan

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3:30 AM - CC7.03
Optimization of Growth Conditions for A-Plane AlN on R-Plane Sapphire

Chia-Hung Lin 1 Shuhei Suzuki 1 Hideto Miyake 1 Kazumasa Hiramatsu 1

1Mie University Tsu city Japan

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3:45 AM - CC7.04
Temperature Dependence on AlN Buffer Layer in N2-CO Ambient

Shuhei Suzuki 1 Hideto Miyake 1 Kazumasa Hiramatsu 1 Hiroyuki Fukuyama 2

1Mie University Tsu City Japan2Tohoku University Sendai City Japan

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4:00 AM - CC7.05
Initial Stages of AlN Growth on Silicon (111) Using Metalorganic Chemical Vapor Deposition

Andrew Lange 1 Subhash Mahajan 1

1University of California, Davis Davis United States

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4:15 AM -
BREAK

CC8: Characterization II
Session Chairs
James Speck
Hideto Miyake
Wednesday PM, April 08, 2015
Moscone West, Level 2, Room 2016

4:30 AM - *CC8.01
Nano-Structural Analysis of GaN-based III-V Materials by Using Atom Probe Microscopy and Transmission Electron Microscopy

Shigetaka Tomiya 1

1Sony Corporation Atsugi Japan

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5:00 AM - *CC8.02
Toward an Understanding of GaN Defects and Device Reliability Using Deep Level Trap Spectroscopy Methods

Steven A. Ringel 1 Aaron Arehart 1 Zeng Zhang 1 Anup Sasikumar 1 Drew Cardwell 1 Erin Kyle 2 Stephen Kaun 2 Jin Chen 3 En Xia Zhang 3 Paul Saunier 4 Cathy Lee 4 Daniel M Fleetwood 3 Ronald D Schrimpf 3 James S. Speck 2

1The Ohio State University Columbus United States2University of California, Santa Barbara Santa Barbara United States3Vanderbilt University Nashville United States4Triquint Semiconductor Inc. Richardson United States

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5:30 AM - CC8.03
Relevance of Threading Dislocations for the Thermal Oxidation of GaN

Maria Susanne Reiner 1 2 Christian Koller 1 Kurt Pekoll 1 Rudolf Pietschnig 2 Clemens Ostermaier 1

1Infineon Technologies Austria AG Villach Austria2University of Kassel Kassel Germany

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5:45 AM - CC8.04
Direct Evidence of Quantum Dot Emission from GaN Islands at Threading Dislocations using Scanning Transmission Electron Microscope Cathodoluminescence

Gordon Schmidt 2 Christoph Berger 2 Sebastian Metzner 2 Peter Veit 2 Gordon Callsen 3 Juergen Blaesing 2 Frank Bertram 2 Armin Dadgar 2 Axel Hoffmann 3 Andre Strittmatter 2 Juergen H. Christen 2 Marcus Mueller 1

1Otto-von-Guericke University Magdeburg Magdeburg Germany2Otto-von-Guericke-University Magdeburg Magdeburg Germany3Technical University Berlin Berlin Germany

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CC5: Electronic Device Reliability and Degradation
Session Chairs
Kenji Shiojima
Tomoyoshi Mishima
Wednesday AM, April 08, 2015
Moscone West, Level 2, Room 2016

9:00 AM - *CC5.01
Physical Mechanisms Affecting the Reliability of GaN-Based High Electron Mobility Transistors

Ronald D Schrimpf 1 Daniel M Fleetwood 1 Sokrates T. Pantelides 1 Y.S. Puzyrev 1 S. Mukherjee 1 R. A. Reed 1 James S. Speck 2 U. K. Mishra 2

1Vanderbilt University Nashville United States2University of California Santa Barbara Santa Barbara United States

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CC9: Poster Session
Session Chairs
Kenji Shiojima
Osamu Ueda
Wednesday PM, April 08, 2015
Marriott Marquis, Yerba Buena Level, Salon 7/8/9

9:00 AM - CC9.01
Differential Potentiometric Sensor Operation: How the Properties of Sensing Element Materials Influence on Device Reliability

Hugo Jose N P Dias Mello 1 Marcelo Mulato 1

1Universidade de Satilde;o Paulo Ribeiratilde;o Preto Brazil

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9:00 AM - CC9.02
Application of Water Repellent Coating to High Aspect Ratio Pattern for Leaning Free

Sunghyuk Cho 1 Hyungsoon Park 1 Jusig Song 1 Hyung Hwan Kim 1 Kwon Hong 1 Sung Ki Park 1

1SK Hynix Semiconductor Icheon Korea (the Republic of)

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9:00 AM - CC9.03
Valence Band Structure of ZnSnN2 Studied by X-Ray Photoelectron Spectroscopy

Shenglin Ye 1 Yi Xia 1 Jeffrey McKay 1 Jiechen Wu 1 Xiaoxing Lu 1 Jinhee Park 1 Dwight Streit 1

1University of California at Los Angeles(UCLA) Los Angeles United States

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9:00 AM - CC9.04
Reduction of Trap Sites in the Tunnel Oxide and Si Interfacial Layers with Chlorine Incorporation for Reliability of NAND Flash Memory Devices

Jeongsang Kang 1 Daehwan Yun 1 Gil-Bok Choi 1 Byoungjun Park 1 Seongjo Park 1 Myoungkwan Cho 1 Kun-ok Ahn 1 Jinwoong Kim 1

1SK hynix Cheongju Korea (the Republic of)

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9:00 AM - CC9.05
Reliability Detection of Process-Induced Metallization Defects on GaAs Devices

Steve H. Kilgore 1

1Freescale Semiconductor, Inc. Tempe United States

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9:00 AM - CC9.06
Improving Charge Transport in n-Type OFETs by Chemical Modification of the Semiconductor-Dielectric Interface

Xin Yu Chin 2 Alessandro Luzio 3 Zilong Wang 2 Jun Yin 2 Daniele Fazzi 4 Mario Caironi 1 Cesare Soci 2 5 Daniele Cortecchia 2

1Inst Italiano di Tecnologia Milano Italy2Nanyang Technological University Singapore Singapore3Istituto Italiano di Tecnologia Milano Italy4Max-Planck-Institut fuuml;r Kohlenforschung Muuml;lheim an der Ruhr Germany5Nanyang Technological University Singapore Singapore

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9:00 AM - CC9.07
Diketopyrrolopyrrole-Based Stretchable Semiconducting Polymers for Organic Thin Film Transistors

Stephanie Benight 1 Ging-Ji Nathan Wang 1 Alex Chortos 1 Zhenan Bao 1

1Stanford University Stanford United States

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9:00 AM - CC9.08
Effect of Bi and Sb Dopant on Lattice Thermal Conductivity in Melt Grown Mg2Si

Tsubasa Otsubo 1 Hideaki Otake 1 Takuma Shiga 2 Junichiro Shiomi 2 Masaru Itakura 3 Haruhiko Udono 1

1Ibaraki University Ibaraki Japan2Univ of Tokyo Tokyo Japan3Kyushyu University Fukuoka Japan

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9:00 AM - CC9.09
Stability Investigation of Microwave Annealing for NiSiGe Schottky on SiGe P-Channel Quantum Well Logic Device Applications

Yi-he Tsai 2 Chung-Chun Hsu 1 Chao-Hsin Chien 1 3 Wei-Chun Chi 1 Yu-Hsien Lin 2 Jyun-Han Li 2 Hung-Pin Chien 1 Guang-Li Luo 3 Che-Wei Chen 1 Cheng-Ting Chung 1 Yao-Jen Lee 3

1National Chiao Tung University, Hsinchu, Taiwan Hsinchu Taiwan2National United University Miaoli Taiwan3National Nano Device Laboratories Hsinchu Taiwan

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9:00 AM - CC9.10
Molecular Design, Synthesis and Characterization of p- and n-Channel pi;-Conjugated Donor-Acceptor Co-Polymers and Applications in Thin Film Devices

Boyi Fu 1 Zhibo Yuan 1 Yundi Jiang 1 David Collard 1 Elsa Reichmanis 1

1Georgia Institute of Technology Atlanta United States

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9:00 AM - CC9.12
Evolution of Structural and Optical Properties on PIN and NIP pm-Si:H Devices During 400 Hrs of Light-Soaking

Leon Hamui 1 Guillermo Santana Rodriguez 2

1UNAM Mexico City Mexico2UNAM Coyoacaacute;n Mexico

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9:00 AM - CC9.13
Epitaxial Transfer Printing of High-Performance III-V/Si Hetero-Junction Photodiodes

Doo-Seung Um 1 Youngsu Lee 1 Seongdong Lim 1 Hyunhyub Ko 1

1UNIST Ulsan Korea (the Republic of)

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9:00 AM - CC9.14
Effect of Ultra-Thin GaAs Barrier Layer on Coupled Bilayer InAs/GaAs Quantum Dots and Impact of Rapid Thermal Annealing

Binita Tongbram 2 Subhananda Chakrabarti 1

1Indian Institute Of Technology, Bombay Mumbai India2Indian Institute Of Technology, Bombay Mumbai India

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9:00 AM - CC9.15
Conformation-Insensitive Ambipolar Charge Transport in a Diketopyrrolopyrrole-Based Co-Polymer Containing Acetylene Linkages

Hui-Jun Yun 1 Hyun-Ho Choi 3 Myeong-Jong Kim 1 Jae-Yeol Ma 2 Kilwon Cho 3 Yun-Hi Kim 2 Soon-Ki Kwon 1 Ye Rim Cheon 1

1Gyeongsang National University Jinju Korea (the Republic of)2Gyeongsang National University Jinju Korea (the Republic of)3POSTECH Pohang Korea (the Republic of)

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9:00 AM - CC9.16
Prevention of Pattern Leaning Using Water Repellent Chemical Coating for sub 20nm High Aspect Ratio Pattern

Hyungsoon Park 1 Sunghyuk Cho 1 Jusig Song 1 Hyung Hwan Kim 1 Kwon Hong 1 Sung Ki Park 1

1SK Hynix Semiconductor Icheon Korea (the Republic of)

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9:00 AM - CC9.17
Alkyl Side Chain Engineering for High Performance Organic Semiconductor

Jang Yeol Baek 2 Myeong-Jong Kim 2 Ye Rim Cheon 1 Hojeong Yu 3 Joon Hak Oh 4 Yun-Hi Kim 1

1Gyeongsang National University Jinju-si Korea (the Republic of)2Gyeongsang National University Jinju Korea (the Republic of)3Ulsan National Institute of Science and Technology Ulsan Korea (the Republic of)4Pohang University of Science and Technology Pohang Korea (the Republic of)

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9:00 AM - CC9.18
The Influence of Thermal Treatment on Monocrystalline CZT and Tellurium Inclusions

Jonathan Lassiter 1 Charles Payton 1 Maxx Jackson 1 Samuel Uba 1 Claudiu I. Muntele 2 Stephen Oluseyi Babalola 3 Trent Montgomery 4

1Alabama Aamp;M University Huntsville United States2Cygnus Scientific Services Huntsville United States3Alabama A and M University Huntsville United States4Alabama Aamp;M University Huntsville United States

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CC5: Electronic Device Reliability and Degradation
Session Chairs
Kenji Shiojima
Tomoyoshi Mishima
Wednesday AM, April 08, 2015
Moscone West, Level 2, Room 2016

9:30 AM - *CC5.02
Space Environments and Effects for CIGS Solar Cells and Modules

Shirou Kawakita 1 Mitsuru Imaizumi 1 Hiroaki Kusawake 1

1Japan Aerospace Exploration Agency (JAXA) Tsukuba Japan

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10:00 AM - *CC5.03
GaN Reliability

James S. Speck 1 Erin Kyle 1 Stephen Kaun 1 Zeng Zhang 2 Aaron Arehart 2 Jin Chen 3 En Xia Zhang 3 Daniel M Fleetwood 3 Ronald D Schrimpf 3 Steve Ringel 3

1University of California Santa Barbara Santa Barbara United States2The Ohio State University Columbus United States3Vanderbilt University Nashville United States

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10:30 AM - CC5.04
Temperature Dependence of Photovoltaic Properties in InGaN Solar Cells

Liwen Sang 1 Meiyong Liao 1 Masatomo Sumiya 1

1National Institute for Materials Science Tsukuba Japan

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10:45 AM -
BREAK

CC6: Characterization I
Session Chairs
Kenji Shiojima
Tamotsu Hashizume
Wednesday AM, April 08, 2015
Moscone West, Level 2, Room 2016

11:00 AM - *CC6.01
Characterization of Surface/Interface States for Stability Improvement of GaN-Based HEMTs

Tamotsu Hashizume 1 Zenji Yatabe 1

1Hokkaido University Japan Japan

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11:30 AM - *CC6.02
Analysis of GaInN/GaN Superlattice on GaN by in situ X-Ray Diffraction Monitoring Attached with Metalorganic Vapor Phase Epitaxy Equipment

Motoaki Iwaya 1 Taiji Yamamoto 1 Daisuke Iida 1 Koji Ishihara 1 Tetsuya Takeuchi 1 Satoshi Kamiyama 1 Isamu Akasaki 1 2

1Meijo University Nagoya Japan2Nagoya University Nagoya Japan

Sho