Meetings & Events

 

2015 MRS Spring Meeting Logo2015 MRS Spring Meeting & Exhibit

April 6-10, 2015 | San Francisco
Meeting Chairs: Artur Braun, Hongyou Fan, Ken Haenen, Lia Stanciu, Jeremy A. Theil



Symposium Y : Phase-Change Materials for Data Storage, Cognitive Processing and Photonics Applications

2015-04-07   Show All Abstracts

Symposium Organizers

Ritesh Agarwal, Univ of Pennsylvania
Huai-Yu Cheng, Macronix International Co Ltd
Riccardo Mazzarello, RWTH Aachen
Robert Simpson, SUTD
Y3: Structure and Bonding
Session Chairs
Ritesh Agarwal
Tuesday PM, April 07, 2015
Moscone West, Level 2, Room 2003

2:45 AM - *Y3.01
Designing New Phase Change Materials via Disorder and Stoichiometry

Matthias Wuttig 1

1RWTH Aachen Aachen Germany

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3:15 AM - Y3.02
Disorder Control in Crystalline Phase Change Material Using High Pressure

Ming Xu 1 Wei Zhang 1 Riccardo Mazzarello 2 Matthias Wuttig 1

1RWTH Aachen Aachen Germany2RWTH Aachen Aachen Germany

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3:30 AM - Y3.03
Probing Ferroelectric Domains and Their Evolution in GeTe during Crystal-Amorphous Transformation Using Optical Second Harmonic Polarimetry

Pavan Nukala 1 Mingliang Ren 1 Rahul Agarwal 1 Ritesh Agarwal 1

1University of Pennsylvania Philadelphia United States

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3:45 AM - Y3.04
Local Structure of Amorphous Te-Rich GexTe1-x Alloys: Experiments and Simulations

Antonio Massimiliano Mio 1 Stefania Privitera 1 Giovanni Mannino 1 Julia Benke 2 Christoph Werner Persch 2 Davide Colleoni 3 Sebastiano Caravati 3 Marco Bernasconi 3 Michele Parrinello 4 Emanuele Rimini 1

1Consiglio Nazionale delle Ricerche Catania Italy2RWTH Aachen University Aachen Germany3Universitagrave; di Milano-Bicocca Milano Italy4ETH Zurich Lugano Swaziland

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4:00 AM -
Break

Y4: Optical Properties of Phase-Change Material
Session Chairs
Robert Simpson
Tuesday PM, April 07, 2015
Moscone West, Level 2, Room 2003

4:30 AM - *Y4.01
In Situ Electron Microscopy Studies of Nanocrystal Growth and Assembly

A. Paul Alivisatos 1

1University of California, Berkeley Berkeley United States

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5:00 AM - Y4.02
Color Switching with Enhanced Optical Contrast in Ultrathin Phase-Change Materials and Semiconductors

Franziska Schlich 1 Peter Zalden 2 Aaron Lindenberg 3 Ralph Spolenak 1

1ETH Zurich Zurich Switzerland2SLAC National Accelerator Laboratory Stanford United States3Stanford Univ Stanford United States

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5:15 AM - *Y4.03
Optically Switchable and Rewritable Phase-Change (Dielectric) Metamaterials

Qian Wang 1 2 Artemios Karvounis 1 Behrad Gholipour 1 Weiping Wu 1 Edward T. F. Rogers 1 3 Kevin F. MacDonald 1 Nikolay I. Zheludev 1 4

1University of Southampton Southampton United Kingdom2Institute of Materials Research and Engineering Singapore Singapore3University of Southampton Southampton United Kingdom4Nanyang Technological University Singapore Singapore

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5:45 AM - Y4.04
Dark- and Photoconductivity in Amorphous Phase-Change Materials

Matthias Elliot Kaes 1 2 Martin S. Salinga 2 Daniel Krebs 1

1IBM Research Zurich Rueschlikon Switzerland2RWTH Aachen Aachen Germany

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Y1: Crystallization Kinetics
Session Chairs
Riccardo Mazzarello
Junji Tominaga
Tuesday AM, April 07, 2015
Moscone West, Level 2, Room 2003

9:30 AM - *Y1.01
Crystallization and Transient Effects in Supercooled Liquids of Phase-Change Materials

Jiri Orava 1 2

1University of Cambridge Cambridge United Kingdom2Tohoku University Sendai Japan

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10:00 AM - *Y1.02
Fragility of the Supercoled Liquid and Structural Relaxations in the Glass from Large Scale Molecular Dynamics Simulations of Phase Change Compounds

Silvia Gabardi 2 Gabriele Cesare Sosso 1 Sebastiano Caravati 2 Colombo Jader 3 Emanuela Del Gado 3 Joerg Behler 4 Marco Bernasconi 2

1ETHZ Lugano Switzerland2University of Milano-Bicocca Milano Italy3ETH Zurich Switzerland4Ruhr-Universitaet Bochum Germany

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10:30 AM -
Break

11:00 AM - *Y1.03
Crystallization Kinetics of Phase Change Materials during Laser Crystallization from in situ TEM

Melissa Santala 3 Simone Raoux 1 Huai-Yu Cheng 4 Teya Topuria 2 Geoffrey Campbell 3

1Helmholtz-Zentrum Berlin Berlin Germany2IBM Almaden Research Ctr San Jose United States3Lawrence Livermore National Laboratory Livermore United States4Macronix International Co Ltd Yorktown Heights United States

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11:30 AM - Y1.04
Ab initio Simulations of Crystallization of GeSbTe Phase-Change Compounds

Ider Ronneberger 1 Wei Zhang 1 Hagai Eshet 3 Riccardo Mazzarello 1 2

1RWTH Aachen Aachen Germany2JARA Aachen Germany3Tel Aviv University Tel Aviv Israel

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Y2: Structural Dynamics
Session Chairs
Matthias Wuttig
Tuesday AM, April 07, 2015
Moscone West, Level 2, Room 2003

11:45 AM - *Y2.01
Ultrafast Amorphization of Phase Change Materials Driven by a Collapse of Resonant Bonding

Simon Wall 1 Timothy Miller 1 Lutz Waldecker 3 Miquel Rude 1 Robert E. Simpson 2 Valerio Pruneri 1 Ralph Ernstorfer 3

1ICFO - The Institute of Photonic Sciences Castelldefels Spain2SUTD Singapore Singapore3Fritz Haber Institute Berlin Germany

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12:15 PM - Y2.02
Direct Observation of Lattice Dynamics in Ge2Sb2Te5 using a Free-Electron Laser

Paul Fons 1 3 Kirill Mitrofanov 1 Kotaro Makino 1 Alexander V Kolobov 1 3 Junji Tominaga 1 Valeria Bragaglia 2 Raffaella Calarco 2 Henning Riechert 2 Muneaki Hase 4

1Nat. Inst. of Adv. Ind. Sci. amp; Tech. Tsukuba Japan2Paul-Drude Inst Berlin Germany3Japan Synchrotron Radiation Institute Kouto-machi Japan4University of Tsukuba Tsukuba Japan

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12:30 PM - Y2.03
Non-thermal Switching of Phase Change Memory Materials

Jitendra Kumar Behera 1 W J Wang 2 Xilin Zhou 1 Robert E. Simpson 1

1Singapore University of Technology and Design Singapore Singapore2Data Storage Institute (DSI), A*STAR Singapore Singapore

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12:45 PM - Y2.04
Discovery of a New Memory Switching Mechanism in Phase-Change Nanowires

Elham Mafi 2 Xin Tao 2 Yi Gu 1

1Washington State Univ Pullman United States2Washington State University Pullman United States

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2015-04-08   Show All Abstracts

Symposium Organizers

Ritesh Agarwal, Univ of Pennsylvania
Huai-Yu Cheng, Macronix International Co Ltd
Riccardo Mazzarello, RWTH Aachen
Robert Simpson, SUTD
Y6: Resistance Drift and Switching Behavior in PCM
Session Chairs
Bart Kooi
Daniele Ielmini
Wednesday PM, April 08, 2015
Moscone West, Level 2, Room 2003

2:30 AM - *Y6.01
Resistance Stabilization Effect of the Metallic Surfactant in a Phase Change Memory Cell

SangBum Kim 1 Norma E. Sosa 1 Matthew BrightSky 1 Daisuke Mori 2 Wanki Kim 1 Yu Zhu 1 Koukou Suu 2 Chung Lam 1

1IBM T. J. Watson Research Center Yorktown Heights United States2ULVAC, Inc. Shizuoka Japan

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3:00 AM - Y6.02
Analysis of the Resistance Drift of Polycrystalline Phase-Change Materials by Low Frequency Noise Measurement

Sarra Souiki-Figuigui 1 2 Veronique Sousa 1 Gerard Ghibaudo 2 Gabriele Navarro 1 Martin Antoine Coue 1 Luca Perniola 1 Paola Zuliani 3 Roberto Annunziata 3

1CEA, LETI, Minatec Campus Grenoble France2IMEP-LAHC Grenoble France3STMicroelectronics Agrate Brianza Italy

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3:15 AM - Y6.03
Phase Change Memory Cell Based on ALD Materials

Norma Sosa 2 Takeshi Masuda 1 SangBum Kim 2 Matthew BrightSky 2 Koukou Suu 1 Chung Lam 2

1ULVAC Inc Susono Japan2IBM T.J. Watson Research Center Yorktown Heights United States

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3:30 AM - Y6.04
Suppressing the Effect of Thermoelectric Heating in Phase-Change Memory Cells

Gokhan Bakan 1 2

1Bilkent University Ankara Turkey2University of Connecticut Storrs United States

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3:45 AM - Y6.05
Aging Mechanisms in Amorphous GeTe

Jean-Yves Raty 4 Wei Zhang 2 Jennifer Luckas 2 Riccardo Mazzarello 2 Christophe Bichara 1 Matthias Wuttig 3

1CRMCN-CNRS Marseille France2RWTH Aachen Aachen Germany3RWTH Aachen Aachen Germany4University of Liege, Belgium Sart-Tilman Belgium

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4:00 AM -
Break

Y7: Phase-Change Material Engineered and PCM Nanostructures
Session Chairs
Ritesh Agarwal
Wednesday PM, April 08, 2015
Moscone West, Level 2, Room 2003

4:30 AM - Y7.01
Strain Engineered Phase Change Materials

Robert E. Simpson 1 Janne Kalikka 1 Xilin Zhou 1 Ju Li 2

1Singapore University of Technology and Design (SUTD) Singapore Singapore2MIT Cambridge United States

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4:45 AM - *Y7.02
Low-Power Resistive Memory with 1D and 2D Electrodes

Eric Pop 1

1Stanford University Stanford United States

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5:15 AM - *Y7.03
Incorporation of Modulated Nanostructures Derived from Si-Containing Block Copolymers in Phase-Change Memory and Resistive Memory for Performance Enhancements

Woon Ik Park 1 Byoung Kuk You 1 Keon-Jae Lee 1 Yeon Sik Jung 1

1Korea Advanced Institute of Science and Technology (KAIST) Daejeon Korea (the Republic of)

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5:45 AM - Y7.04
Electrodeposition of Nanostructured GeSbTe for the Application of Phase Change Memory

Ruomeng Huang 2 Philip Bartlett 1 Andrew Lee Hector 1 Andrew Jolleys 1 Gabriela Kissling 1 William Levason 1 Gillian Reid 1 C. H (Kees) de Groot 2

1Univ of Southampton Southampton United Kingdom2University of Southampton Southampton United Kingdom

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Y5: Phase-Change Memory
Session Chairs
Huai-Yu Cheng
Paul Fons
Wednesday AM, April 08, 2015
Moscone West, Level 2, Room 2003

10:00 AM - *Y5.01
Phase-Change Material Optimization for Boosting More Memory Applications

Agostino Pirovano 1 Andrea Redaelli 1 Roberto Bez 1

1Micron Agrate Brianza Italy

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10:30 AM - Y5.02
Integration of Phase Change Materials in Confined Structures for Low Power Devices

Manuela Aoukar 1 2 3 Pierre David Szkutnik 2 Christophe Vallee 1 2 Dominique Jourde 3 Gabriele Navarro 3 Pierre Noe 3

1Univ. Grenoble Alpes, LTM Grenoble France2CNRS, LTM, CEA - LETI Grenoble France3CEA, LETI, Minatec Campus Grenoble France

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10:45 AM -
Break

11:15 AM - *Y5.03
Three-Dimensional Chain-Cell-Type Phase-Change Memory for Ultra High Density Storage

Yoshitaka Sasago 1 Yoshihisa Fujisaki 1 Takashi Kobayashi 1

1Hitachi, Ltd. Tokyo Japan

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11:45 AM - Y5.04
Evidence for Thermally-Assisted Threshold Switching Behavior in Nanoscale Phase-Change Memory Cells

Manuel Le Gallo 1 Abu Sebastian 1 Daniel Krebs 1

1IBM Research Zurich Rueschlikon Switzerland

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12:00 PM - *Y5.05
Threshold Switching Statistical Analysis in Phase-Change Memory for Design Optimization and Reliability Assessment at High Operating Temperatures

Gabriele Navarro 1 Niccolo Castellani 1 Veronique Sousa 1 Paola Zuliani 2 Roberto Annunziata 2 Luca Perniola 1

1CEA, LETI, Minatec Campus Grenoble France2STMicroelectronics Agrate Brianza Italy

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12:30 PM - Y5.06
Characterization and Modelling of Electrically Induced Stoichiometric Variations in Phase Change Memory (PCM) Cells with Line-Bridge Architecture

Giuseppe D'Arrigo 1 Luca Crespi 4 Mattia Boniardi 2 Andrea Redaelli 2 Antonella Sciuto 1 Gema Martinez Criado 3 Emanuele Rimini 1 Andrea Lacaita 4 5

1Consiglio Nazionale delle Ricerche Catania Italy2Micron Semiconductor Italia s.r.l. Agrate Brianza Italy3European Synchrotron Radiation Facility Grenoble France4Politecnico di Milano Milano Italy5IFN Consiglio Nazionale delle Ricerche Milano Italy

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12:45 PM - Y5.07
Electrical Current-Induced Modulation of Conductivity in Cubic Phase of Ge2Sb2Te5

Yongjin Park 1 Juyoung Cho 1 Minwoo Jeong 1 Young-Chang Joo 1

1Seoul National University Gwanak-gu Korea (the Republic of)

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2015-04-09   Show All Abstracts

Symposium Organizers

Ritesh Agarwal, Univ of Pennsylvania
Huai-Yu Cheng, Macronix International Co Ltd
Riccardo Mazzarello, RWTH Aachen
Robert Simpson, SUTD
Y10: Neuromorphic Hardware/Logic/ Circuits/New Concept
Session Chairs
Paul Fons
Daniele Ielmini
Thursday PM, April 09, 2015
Moscone West, Level 2, Room 2003

2:30 AM - *Y10.01
Phase Change Logic for Scalable, Normally-off Digital Computing

Daniele Ielmini 1

1Politecnico di Milano Milano Italy

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3:00 AM - Y10.02
Development of Chalcogenide Materials as the Basis for RF Inline Phase Change Switches

Matthew R King 1 Nabil El-Hinnawy 1 Pavel Borodulin 1 Brian Wagner 1 Evan Jones 1 Robert Howell 1 Michael Lee 1 Doyle Nichols 1 Robert Young 1

1Northrop Grumman Electronic Systems Linthicum United States

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3:15 AM - *Y10.03
New 'Mixed-Mode' Optoelectronic Applications Possibilities Using Phase-Change Materials and Device

C. David Wright 1 Yat-Yin Au 1 Harish Bhaskaran 2 Gerardo Rodriguez-Hernandez 2 Peiman Hosseini 2 Carlos Rios 2 Ritesh Agarwal 3 Wolfram HP Pernice 4

1University of Exeter Exeter United Kingdom2University of Oxford Oxford United Kingdom3University of Pennsylvania Philadelphia United States4Karlsruhe Institut fuuml;r Technologie Eggenstein-Leopoldshafen Germany

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3:45 AM - Y10.04
A Phase-Change-Based Synaptronic Device with Weight-Dependent Plasticity

Tomas Tuma 1 Manuel Le Gallo 1 Angeliki Pantazi 1 Abu Sebastian 2 Evangelos Eleftheriou 1

1IBM Research - Zurich Rueschlikon Switzerland2IBM Rueschlikon Switzerland

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4:00 AM - Y10.05
Towards Artificial Electronic Neurons and Their Noises

Hyungkwang Lim 1 2 Vladimir Kornijcuk 1 3 Jun Yeong Seok 1 2 Inho Kim 1 Seong Keun Kim 1 Cheol Seong Hwang 2 Doo Seok Jeong 1

1Korea Institute of Science and Technology Seoul Korea (the Republic of)2Seoul National University Seoul Korea (the Republic of)3Seoul National University of Science and Technology Seoul Korea (the Republic of)

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Y8: Superlattice Material
Session Chairs
Robert Simpson
Raffaella Calarco
Thursday AM, April 09, 2015
Moscone West, Level 2, Room 2003

9:30 AM - *Y8.01
Role of Substrate Preparation in Order to Employ Molecular Beam Epitaxy Grown Phase Change Materials for Devices

Raffaella Calarco 1

1Paul-Drude-Institut fuer Festkoerperelektronik Berlin Germany

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10:00 AM - Y8.02
Highly-Oriented Sb2Te3 Film Fabricated on Various Substrates Using RF-Magnetron Sputtering

Yuta Saito 1 Junji Tominaga 1 Kotaro Makino 1 Xiaomin Wang 1 Alexander V Kolobov 1 Paul Fons 1 Takashi Nakano 1

1AIST Tsukuba Japan

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10:15 AM - Y8.03
Intermixing at the Interface between GeTe and Sb2Te3 in Chalcogenide Superlattices

Rui Ning Wang 1 Jos E. Boschker 1 Raffaella Calarco 1 Jamo Momand 2 Bart J. Kooi 2 Marcel Verheijen 3

1Paul-Drude-Institut fuuml;r Festkouml;rperelektronik Berlin Germany2Zernike Institute for Advanced Materials Groningen Netherlands3Eindhoven University of Technology Eindhoven Netherlands

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10:30 AM - Y8.04
Quantitative X-Ray Diffraction Simulation of Highly Ordered Superlattices and GST Alloys

Fabrizio Arciprete 1 2 Valeria Bragaglia 1 Rui Ning Wang 1 Jos Emiel Boschker 1 Raffaella Calarco 1

1Paul-Drude-Institut fuer Festkoerperelektronik Berlin Germany2University of Rome Tor Vergata Rome Italy

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10:45 AM -
Break

11:15 AM - Y8.05
Terahertz and Raman Investigations of Epitaxial GeTe-SbTe Alloys and Sb2Te3/GeTe Superlattices

Valeria Bragaglia 1 Karsten Holldack 2 Timur Flissikowski 1 Raffaella Calarco 1

1Paul-Drude-Institut fuer Festkoerperelektronik Berlin Germany2Helmholtz-Zentrum Berlin fuuml;r Materialien und Energie GmbH Berlin Germany

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11:30 AM - Y8.06
Unconventional Temperature Dependence of Coherent Phonons in Interfacial Phase Change Memory Material

Kotaro Makino 1 Yuta Saito 1 Paul Fons 1 Alexander Kolobov 1 Takashi Nakano 1 Junji Tominaga 1 Muneaki Hase 2

1AIST Tsukuba Japan2University of Tsukuba Tsukuba Japan

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11:45 AM - Y8.07
Modeling of Phase Change Mechanism in Chalcogenide Superlattices

Xiaoming Yu 1 John Robertson 1

1Cambridge Univ Cambridge United Kingdom

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Y9: GaSb and AIST Phase-Change Materials
Session Chairs
Riccardo Mazzarello
Thursday AM, April 09, 2015
Moscone West, Level 2, Room 2003

12:00 PM - *Y9.01
Ga-Sb Alloys for Phase Change Memory: Impact of Doping on Crystallization Properties

Magali Putero 1 Marie-Vanessa Coulet 4 Christophe Muller 1 Carsten Baehtz 5 Simone Raoux 2 Huai-Yu Cheng 3

1Aix-Marseille Universiteacute;, CNRS, IM2NP Marseille France2Helmholtz-Zentrum Berlin Berlin Germany3Macronix International Co Ltd Yorktown Heights United States4Aix-Marseille Universiteacute;, CNRS Marseille France5Helmholtz-Zentrum Dresden-Rossendorf e.V., Institute of Ion Beam Physics and Materials Research Dresden Germany

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12:30 PM - Y9.02
THz Electric Field and Optically Induced Crystallization of Ag4In3Sb67Te26

Peter Zalden 2 1 Michael Shu 2 1 Alexander von Hoegen 3 Frank Chen 2 1 Aaron Lindenberg 2 1

1SLAC National Accelerator Laboratory Stanford United States2Stanford University Stanford United States3RWTH Aachen University Aachen Germany

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