2018 MRS Spring Meeting

Symposium EP01 : Materials for Beyond the Roadmap Devices in Logic, Memory and Power

2018-04-03   Show All Abstracts

Symposium Organizers

John Robertson, Cambridge University
Jesus del Alamo, Massachusetts Institute of Technology
Andrew Kummel, University of California, San Diego
Masaaki Niwa, Tohoku University
EP01.01: Ge Gate Stacks and Integration
Session Chairs
Jesus del Alamo
Andrew Kummel
Tuesday AM, April 03, 2018
PCC North, 200 Level, Room 224 A

10:30 AM - EP01.01.01
Novel Gate Stack Engineering for High Mobility Ge nFETs

Hiroaki Arimura1,Daire Cott1,Roger Loo1,Kurt Wostyn1,Guillaume Boccardi1,Jacopo Franco1,Sonja Sioncke1,Qi Xie2,Fu Tang3,Xiaoqiang Jiang3,Michael Givens3,Eddie Chiu4,Jerome Mitard1,Dan Mocuta1,Nadine Collaert1

imec1,ASM Belgium2,ASM International3,HPSP4

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11:00 AM - EP01.01.02
Scavenging Gate Metal for Reducing Defect Density in SiGe MOSCAP Devices

Emily Thomson1,Mahmut Sami Kavrik1,Andrew Betts1,Andrew Kummel1

UCSD1

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11:15 AM - EP01.01.03
Face Dependence of Schottky Barrier Heights and Weak Fermi Level Pinning of Metal Germanides and Silicides on Ge

Yuzheng Guo2,Hongfei Li1,John Robertson1

University of Cambridge1,Swansea University2

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11:30 AM - EP01.01.04
Heterogeneous Integration of III-V and Ge-Based Devices on the Si Platform

Xiao Gong1,Sachin Yadav1,Annie Kumar1,Shuh-Ying Lee2,Kian Hua Tan2,Wan Khai Loke2,Kian Hui Goh1,Bowen Jia2,Satrio Wicaksono2,Soon Fatt Yoon2,Gengchiau Liang1,Yee Chia Yeo1

National University of Singapore1,Nanyang Technological University2

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EP01.02: InGa, GaN and Nanowires
Session Chairs
Tuesday PM, April 03, 2018
PCC North, 200 Level, Room 224 A

1:30 PM - EP01.02.01
III-V Nanowire Tunnel Field Effect Transistors with a SubThreshold Slope of Under 60 mV/Decade

Lars-Erik Wernersson1

Lund University1

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2:00 PM - EP01.02.02
Steep Slope Hysteresis-Free Negative Capacitance MoS2 Transistors

Peide Ye1

Purdue University1

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2:30 PM -
BREAK


3:30 PM - EP01.02.03
Novel p-Band Edge Work Function Modulation for Advanced FETs

Bum Ki Moon1,Ohseong Kwon2,Rajan Pandey1,Hyun-Jin Cho1,Choonghyun Lee3,Jingyun Zhang3,Rohit Galatage1,Robin Chao3,Nicolas Loubet3,Veeraraghavan Basker3,Hemanth Jagannathan3,Walter Kleemeier1

GlobalFoundries1,Samsung Electronics2,IBM Research3

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3:45 PM - EP01.02.04
Near Surface Depletion of Silicon Dopants in Epitaxially Grown Silicon Doped InAs

Guy Cohen1,Marinus Hopstaken1,Michael Saccomanno1,William Spratt1,Paul Solomon1,Christian Lavoie1,Renee Mo1,Sang-Moon Lee2,Jungtaek Kim2,Woo-Bin Song2,Doron Cohen Elias3

IBM T.J. Watson Research Center1,Samsung Electronics Co.2,Soreq Nuclear Research Center3

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4:00 PM - EP01.02.05
Enhancement-Mode GaN-Based MIS-FETs and MIS-HEMTs

Mengyuan Hua1,Kevin J Chen1

Hong Kong University of Science and Technology1

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4:30 PM - EP01.02.06
Selective Surface Oxidation with Ozone Nano-Laminate for Low Interface Defects at HfO2-SiGe

Mahmut Sami Kavrik1,Emily Thomson1,Andrew Betts1,Andrew Kummel1

University of California, San Diego1

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4:45 PM - EP01.02.07
Characterization of ScGaN, FeGaN and FeScGaN as Alternative Materials for High Electron Mobility Transistors (HEMTs)

Simona Pace1,2,Bin Zou2,Robert Davies2,Michelle Moram1

University of Cambridge1,Imperial College London2

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EP01.03: Poster Session
Session Chairs
Andrew Kummel
John Robertson
Tuesday PM, April 03, 2018
PCC North, 300 Level, Exhibit Hall C-E

5:00 PM - EP01.03.01
Annealing Stability in MgO/CoFeB/Ta/[Co/Pd]n Composite Structures

Te-Ho Wu

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5:00 PM - EP01.03.02
Doping Silicon Using Self-Assembled Monolayers for Ultra-Shallow Diffused Layers

Jenna Doran1,Megan Detwiler1,Scott Williams1,Santosh Kurinec1

Rochester Institute of Technology1

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5:00 PM - EP01.03.03
Coercive Voltage of Dipole Switching on Ferroelectric Hf1-xZrxO2 for Steep Subthreshold Swing Operation

Min-Hung Lee1,Chun-Yu Liao1

National Taiwan Normal University1

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5:00 PM - EP01.03.04
Boosting Performance of NiGe/n-Ge Schottky Contact with Modulation of Effective Schottky Barrier Height by Capping Metals with Different Work Function

Yu-Che Chou1,Yu-Hsi Lin1,2,Chung-Chun Hsu1,Chen-Han Chou1,Chao-Hsin Chien1

Institute of Electronics, National Chiao-Tung University1,School of Software and Microelectronics, Peking University2

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5:00 PM - EP01.03.05
Exotic Needle-Like Crystals of Phosphorus Doped SnTe Dirac Materials—Synthesis and Applications in Memory/Micro-Sensor Devices

Sayan Sarkar1,Prashant Sarswat1,Michael Free1

University of Utah1

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5:00 PM - EP01.03.06
Transient Electron Transport Within Bulk Wurtzite Zinc-Magnesium-Oxide Alloys Subjected to High-Fields

Stephen O'Leary2,Walid Hadi1,Poppy Siddiqua2,Michael Shur3

Florida State University1,University of British Columbia2,Rensselaer Polytechnic Institute3

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5:00 PM - EP01.03.07
Potential Performance of Zinc Oxide Based Devices—A Transient Electron Transport Analysis

Stephen O'Leary2,Walid Hadi1,Poppy Siddiqua2,Michael Shur3

Florida State University1,University of British Columbia2,Rensselaer Polytechnic Institute3

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5:00 PM - EP01.03.08
High Photosensitivity Multilayer MoSe2 Phototransistors

Hyejoo Lee1,Woong Choi1

Kookmin University1

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5:00 PM - EP01.03.09
Optoelectronic Properties of Ultraviolet-Ozone-Treated Single Layer MoS2 Crystals

Hae In Yang1,Sunyeong Park1,Woong Choi1

Kookmin University1

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5:00 PM - EP01.03.10
Surface Oxidation of Monolayer MoS2 Thin Film by Ultraviolet-Ozone Treatment

Changki Jung1,Woong Choi1

Kookmin University1

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5:00 PM - EP01.03.11
Heterogeneous Integration of Low Power Electronics with High-Performance Photonics for Ultra Low Power Nanosystems

Satrio Wicaksono1,Kian Hua Tan1,Wan Khai Loke1,Shuh-Ying Lee1,Bowen Jia1,Chiew Yong Yeo1,Soon Fatt Yoon1,Xiao Gong2,Sachin Yadav2,Annie Kumar2,Kian Hui Goh2,Yuan Dong2,Gengchiau Liang2,Yee Chia Yeo2

Nanyang Technological University1,National University of Singapore2

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5:00 PM - EP01.03.12
Total Ionizing Dose Effects on the 1T-TaS2 Charge-Density-Wave Devices—Possibility of Radiation Hard Applications

Ruben Salgado1,Guanxiong Liu1,Enxia Zhang2,Chundong Liang2,Matthew Bloodgood3,Tina Salguero3,Daniel Fleetwood2,Alexander Balandin1

University of California, Riverside1,Vanderbilt University2,University of Georgia3

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5:00 PM - EP01.03.13
Understanding Self-Heating Effects in Silicon-on-Insulator (SOI) MOSFET Devices

Dragica Vasileska2,Suleman Qazi1,2,Xiong Zhang2,Payam Mehr2,Katerina Raleva3,Trevor Thornton2

University of Engineering and Technology1,Arizona State University2,University Sts Cyril and Methodius3

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5:00 PM - EP01.03.14
Air Stability of 2D Hafnium Dichalcogenides

Antonio Cruz1,Zafer Mutlu1,Mihri Ozkan1,Cengiz Ozkan1

University of California, Riverside1

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5:00 PM - EP01.03.15
High Performance Silicon Core-Shell Junction Field Effect Phototransistor by Monolayer Doping

Jiajing He1,Huimin Wen1,Yaping Dan1

Shanghai Jiao Tong University1

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5:00 PM - EP01.03.16
Multiscale Modeling of Thermal and Electrical Characteristics in Silicon CMOS Devices

Robin Daugherty1,Abdul Shaik1,Dragica Vasileska1

Arizona State University1

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5:00 PM - EP01.03.17
Dual Ion Beam Sputtered Low Power high Endurance Resistive Switch with Memristive Behaviour

Amitesh Kumar1

IIT INdore1

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5:00 PM - EP01.03.18
Structural, Chemical and Electronic Properties of 1T-SnS2

Zafer Mutlu1,Ryan Wu2,Bishwajit Debnath1,Mihri Ozkan1,Roger Lake1,K. Andre Mkhoyan2,Cengiz Ozkan1

University of California, Riverside1,University of Minnesota2

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5:00 PM - EP01.03.19
The Impact of Solute Segregation on Grain Boundaries in Dilute Cu Alloys

Takanori Tsurumaru

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5:00 PM - EP01.03.21
Instability of High Resistance Conductive Filaments in RRAM Cells During the Read Operation

Mohammad Al-Mamun1,Marius Orlowski1

Virginia Tech1

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5:00 PM - EP01.03.22
Highly Uniform and Wafer-Scale Integrated MoS2 Transistors

Yonghun Kim1,Eun-Joo Seo1,Dong-Ho Kim1,Jongjoo Rha1,Byungjin Cho2

Korea Institute of Materials Science1,Chungbuk National University2

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5:00 PM - EP01.03.23
An Analysis of Static and Dynamic Characteristics of 12KV 4H-SiC n-IGBT using HfO2-SiO2 Dielectric Stack at High Temperatures

Siva Prasad Kotamraju1,Pavan Kumar Vudumula1

Indian Institute of Information Technology Sricity1

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5:00 PM - EP01.03.24
Enhancing P-Type Doping of GaN for Power Electronics—A Combined Computational Experimental Approach

Timothy Johnson1,James Delaney1,Timothy Jen1,Jiaheng He1,R.S. Goldman1

University of Michigan1

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5:00 PM - EP01.03.25
Tunable Thermal Conduction in Amorphous Niobium Oxide by Oxygen Vacancy Concentration

Zhe Cheng1,Alex Weidenbach1,Marshall Tellekamp1,Brian Foley1,William Doolittle1,Samuel Graham1

Georgia Institute of Technology1

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5:00 PM - EP01.03.27
Dielectric and Ferroelectric Behaviors of PZT Thin Films Modified by Rare Earth Metals (La3+, Sc3+) for Ferroelectric Memory Applications

Mohan Bhattarai1,Karuna Mishra1,Alvaro Instan1,Sita Dugu1,Ram Katiyar1

University of Puerto Rico, Rio Piedras1

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5:00 PM - EP01.03.28
Thermal TCAD Simulations of Silicon Dioxide Conduction Blocking Layers in GaN Vertical High Electron Mobility Transistors

Izak Baranowski1,Houqiang Fu1,Hong Chen1,Xuanqi Huang1,Jossue Montes1,Tsung-Han Yang1,Yuji Zhao1

Arizona State University1

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5:00 PM - EP01.03.29
Effect of Carbon Nanotube Surface Treatment on Morphology and Electrical Properties of Cu-CNT Electrospun Nano Fibers

Farhad Daneshvar1,Tan Zhang1,Hung-Jue Sue1,Atif Aziz2,Mark Welland2

Polymer Technology Center, Texas A&M University1,Nanoscience Center, University of Cambridge2

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5:00 PM - EP01.03.30
The Effect of Leveler on the Via Filling Performance in Copper Electroplating—A Case Study of Functional Groups

SangHoon Jin1,Sung-Min Kim1,Yugeun Jo1,Woon Young Lee1,Min Hyung Lee1

Korea Institute of Industrial Technology1

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5:00 PM - EP01.03.31
The Study on Thickness Uniformity of Copper Electrodeposits Controlled by the Degree of Quaternization of Imine Functional Group

Yugeun Jo1,Sung-Min Kim1,SangHoon Jin1,Woon Young Lee1,Min Hyung Lee1

Korea Institute of Industrial Technology1

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2018-04-04   Show All Abstracts

Symposium Organizers

John Robertson, Cambridge University
Jesus del Alamo, Massachusetts Institute of Technology
Andrew Kummel, University of California, San Diego
Masaaki Niwa, Tohoku University
EP01.04: Ferroelectric HfO2 and Devices
Session Chairs
Andrew Kummel
Akira Toriumi
Wednesday AM, April 04, 2018
PCC North, 200 Level, Room 224 A

8:00 AM - EP01.04.01
Ferroelectric HfO2—Gap States Due to Dopants

Yuzheng Guo2,John Robertson1

Cambridge University1,Swansea University2

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8:15 AM - EP01.04.02
DFTMD Study of the Mechanism of Ferroelectric Stability in HfO2, ZrO2, and HZO (HfxZr1-xO2)

Andrew Kummel1,Evgueni Chagarov1,Mahmut Sami Kavrik1,Norman Stanford2,Albert Davydov2,Michael Katz2,Min-Hung Lee3

University of California, San Diego1,National Institute of Standards and Technology2,National Taiwan University3

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8:30 AM - EP01.04.03
Tuning Parameters and Their Impact on Ferroelectric Hafnium Oxide

Patrick Polakowski1,Teresa Büttner1,Tarek Ali1,Stefan Riedel1,Thomas Kämpfe1,Björn Pätzold1,Konrad Seidel1,Johannes Müller1

Fraunhofer1

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9:00 AM - EP01.04.04
Properties and Mechanisms of Fluorite-Type Ferroelectrics

Cheol Seong Hwang1,Min Hyuk Park1

Seoul National University1

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9:30 AM -
BREAK


EP01.05: Steep Slope Devices
Session Chairs
Jesus del Alamo
John Robertson
Wednesday AM, April 04, 2018
PCC North, 200 Level, Room 224 A

10:00 AM - EP01.05.01
Kinetic Route of Ferroelectric Phase Evolution in Doped HfO2

Akira Toriumi1

University of Tokyo1

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10:30 AM - EP01.05.02
Negative Capacitance as Technology Booster for Sub-10nm CMOS and Beyond CMOS

Adrian Ionescu1,Ali Saeidi1

Ecole Polytechnique Fédérale de Lausanne (EPFL)1

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11:00 AM - EP01.05.03
Steep-Slope Transistors Based on 2D Semiconductors Contacted with the Phase-Change Material VO2

Mahito Yamamoto1,Teruo Kanki1,Azusa Hattori1,Ryo Nouchi2,Kenji Watanabe3,Takashi Taniguchi3,Keiji Ueno4,Hidekazu Tanaka1

Osaka University1,Osaka Prefecture University2,National Institute for Materials Science3,Saitama University4

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11:15 AM - EP01.05.04
Ultralow Energy Electric Field Control of Magnetism—Can We Get to1 AttoJoule/Bit?

Bhagwati Prasad1,Yen-Lin Huang1,Zuhuang Chen1,Humaira Taz2,Anoop Damodaran1,S Manipatruni3,Chia-Ching Lin3,D Nikonov3,I Young3,Ramamoorthy Ramesh1,4

University of California Berkeley1,University of Tenne