2018 MRS Sprring Meeting and Exhibit | Phoenix, Arizona

Symposium EP01 : Materials for Beyond the Roadmap Devices in Logic, Memory and Power

2018-04-03   Show All Abstracts

Symposium Organizers

John Robertson, Cambridge University
Jesus del Alamo, Massachusetts Institute of Technology
Andrew Kummel, University of California, San Diego
Masaaki Niwa, Tohoku University
EP01.01: Ge Gate Stacks and Integration
Session Chairs
Jesus del Alamo
Andrew Kummel
Tuesday PM, April 03, 2018
PCC North, 200 Level, Room 224 A

10:30 AM - EP01.01.01
Novel Gate Stack Engineering for High Mobility Ge nFETs

Hiroaki Arimura1,Daire Cott1,Roger Loo1,Kurt Wostyn1,Guillaume Boccardi1,Jacopo Franco1,Sonja Sioncke1,Qi Xie2,Fu Tang3,Xiaoqiang Jiang3,Michael Givens3,Eddie Chiu4,Jerome Mitard1,Dan Mocuta1,Nadine Collaert1

imec1,ASM Belgium2,ASM International3,HPSP4

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11:00 AM - EP01.01.02
Scavenging Gate Metal for Reducing Defect Density in SiGe MOSCAP Devices

Emily Thomson1,Mahmut Sami Kavrik1,Andrew Betts1,Andrew Kummel1

UCSD1

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11:15 AM - EP01.01.03
Face Dependence of Schottky Barrier Heights and Weak Fermi Level Pinning of Metal Germanides and Silicides on Ge

Yuzheng Guo2,Hongfei Li1,John Robertson1

University of Cambridge1,Swansea University2

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11:30 AM - EP01.01.04
Heterogeneous Integration of III-V and Ge-Based Devices on the Si Platform

Xiao Gong1,Sachin Yadav1,Annie Kumar1,Shuh-Ying Lee2,Kian Hua Tan2,Wan Khai Loke2,Kian Hui Goh1,Bowen Jia2,Satrio Wicaksono2,Soon Fatt Yoon2,Gengchiau Liang1,Yee Chia Yeo1

National University of Singapore1,Nanyang Technological University2

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EP01.02: InGa, GaN and Nanowires
Session Chairs
Tuesday PM, April 03, 2018
PCC North, 200 Level, Room 224 A

1:30 PM - EP01.02.01
III-V Nanowire Tunnel Field Effect Transistors with a SubThreshold Slope of Under 60 mV/Decade

Lars-Erik Wernersson1

Lund University1

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2:00 PM - EP01.02.02
Steep Slope Hysteresis-Free Negative Capacitance MoS2 Transistors

Peide Ye1

Purdue University1

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2:30 PM - EP01.02
BREAK


3:30 PM - EP01.02.03
Novel p-Band Edge Work Function Modulation for Advanced FETs

Bum Ki Moon1,Ohseong Kwon2,Rajan Pandey1,Hyun-Jin Cho1,Choonghyun Lee3,Jingyun Zhang3,Rohit Galatage1,Robin Chao3,Nicolas Loubet3,Veeraraghavan Basker3,Hemanth Jagannathan3,Walter Kleemeier1

GlobalFoundries1,Samsung Electronics2,IBM Research3

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3:45 PM - EP01.02.04
Near Surface Depletion of Silicon Dopants in Epitaxially Grown Silicon Doped InAs

Guy Cohen1,Marinus Hopstaken1,Michael Saccomanno1,William Spratt1,Paul Solomon1,Christian Lavoie1,Renee Mo1,Sang-Moon Lee2,Jungtaek Kim2,Woo-Bin Song2,Doron Cohen Elias3

IBM T.J. Watson Research Center1,Samsung Electronics Co.2,Soreq Nuclear Research Center3

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4:00 PM - EP01.02.05
Enhancement-Mode GaN-Based MIS-FETs and MIS-HEMTs

Mengyuan Hua1,Kevin J Chen1

Hong Kong University of Science and Technology1

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4:30 PM - EP01.02.06
Selective Surface Oxidation with Ozone Nano-Laminate for Low Interface Defects at HfO2-SiGe

Mahmut Sami Kavrik1,Emily Thomson1,Andrew Betts1,Andrew Kummel1

University of California, San Diego1

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4:45 PM - EP01.02.07
Characterization of ScGaN, FeGaN and FeScGaN as Alternative Materials for High Electron Mobility Transistors (HEMTs)

Simona Pace1,2,Bin Zou2,Robert Davies2,Michelle Moram1

University of Cambridge1,Imperial College London2

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EP01.03: Poster Session
Session Chairs
Andrew Kummel
John Robertson
Tuesday PM, April 03, 2018
PCC North, 300 Level, Exhibit Hall C-E

5:00 PM - EP01.03.01
Annealing Stability in MgO/CoFeB/Ta/[Co/Pd]n Composite Structures

Te-Ho Wu

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5:00 PM - EP01.03.02
Doping Silicon Using Self-Assembled Monolayers for Ultra-Shallow Diffused Layers

Jenna Doran1,Megan Detwiler1,Scott Williams1,Santosh Kurinec1

Rochester Institute of Technology1

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5:00 PM - EP01.03.03
Coercive Voltage of Dipole Switching on Ferroelectric Hf1-xZrxO2 for Steep Subthreshold Swing Operation

Min-Hung Lee1,Chun-Yu Liao1

National Taiwan Normal University1

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5:00 PM - EP01.03.04
Boosting Performance of NiGe/n-Ge Schottky Contact with Modulation of Effective Schottky Barrier Height by Capping Metals with Different Work Function

Yu-Che Chou1,Yu-Hsi Lin1,2,Chung-Chun Hsu1,Chen-Han Chou1,Chao-Hsin Chien1

Institute of Electronics, National Chiao-Tung University1,School of Software and Microelectronics, Peking University2

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5:00 PM - EP01.03.05
Exotic Needle-Like Crystals of Phosphorus Doped SnTe Dirac Materials—Synthesis and Applications in Memory/Micro-Sensor Devices

Sayan Sarkar1,Prashant Sarswat1,Michael Free1

University of Utah1

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5:00 PM - EP01.03.06
Transient Electron Transport Within Bulk Wurtzite Zinc-Magnesium-Oxide Alloys Subjected to High-Fields

Stephen O'Leary2,Walid Hadi1,Poppy Siddiqua2,Michael Shur3

Florida State University1,University of British Columbia2,Rensselaer Polytechnic Institute3

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5:00 PM - EP01.03.07
Potential Performance of Zinc Oxide Based Devices—A Transient Electron Transport Analysis

Stephen O'Leary2,Walid Hadi1,Poppy Siddiqua2,Michael Shur3

Florida State University1,University of British Columbia2,Rensselaer Polytechnic Institute3

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5:00 PM - EP01.03.08
High Photosensitivity Multilayer MoSe2 Phototransistors

Hyejoo Lee1,Woong Choi1

Kookmin University1

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5:00 PM - EP01.03.09
Optoelectronic Properties of Ultraviolet-Ozone-Treated Single Layer MoS2 Crystals

Hae In Yang1,Sunyeong Park1,Woong Choi1

Kookmin University1

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5:00 PM - EP01.03.10
Surface Oxidation of Monolayer MoS2 Thin Film by Ultraviolet-Ozone Treatment

Changki Jung1,Woong Choi1

Kookmin University1

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5:00 PM - EP01.03.11
Heterogeneous Integration of Low Power Electronics with High-Performance Photonics for Ultra Low Power Nanosystems

Satrio Wicaksono1,Kian Hua Tan1,Wan Khai Loke1,Shuh-Ying Lee1,Bowen Jia1,Chiew Yong Yeo1,Soon Fatt Yoon1,Xiao Gong2,Sachin Yadav2,Annie Kumar2,Kian Hui Goh2,Yuan Dong2,Gengchiau Liang2,Yee Chia Yeo2

Nanyang Technological University1,National University of Singapore2

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5:00 PM - EP01.03.12
Total Ionizing Dose Effects on the 1T-TaS2 Charge-Density-Wave Devices—Possibility of Radiation Hard Applications

Ruben Salgado1,Guanxiong Liu1,Enxia Zhang2,Chundong Liang2,Matthew Bloodgood3,Tina Salguero3,Daniel Fleetwood2,Alexander Balandin1

University of California, Riverside1,Vanderbilt University2,University of Georgia3

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5:00 PM - EP01.03.13
Understanding Self-Heating Effects in Silicon-on-Insulator (SOI) MOSFET Devices

Dragica Vasileska2,Suleman Qazi1,2,Xiong Zhang2,Payam Mehr2,Katerina Raleva3,Trevor Thornton2

University of Engineering and Technology1,Arizona State University2,University Sts Cyril and Methodius3

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5:00 PM - EP01.03.14
Air Stability of 2D Hafnium Dichalcogenides

Antonio Cruz1,Zafer Mutlu1,Mihri Ozkan1,Cengiz Ozkan1

University of California, Riverside1

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5:00 PM - EP01.03.15
High Performance Silicon Core-Shell Junction Field Effect Phototransistor by Monolayer Doping

Jiajing He1,Huimin Wen1,Yaping Dan1

Shanghai Jiao Tong University1

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5:00 PM - EP01.03.16
Multiscale Modeling of Thermal and Electrical Characteristics in Silicon CMOS Devices

Robin Daugherty1,Abdul Shaik1,Dragica Vasileska1

Arizona State University1

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5:00 PM - EP01.03.17
Dual Ion Beam Sputtered Low Power high Endurance Resistive Switch with Memristive Behaviour

Amitesh Kumar1

IIT INdore1

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5:00 PM - EP01.03.18
Structural, Chemical and Electronic Properties of 1T-SnS2

Zafer Mutlu1,Ryan Wu2,Bishwajit Debnath1,Mihri Ozkan1,Roger Lake1,K. Andre Mkhoyan2,Cengiz Ozkan1

University of California, Riverside1,University of Minnesota2

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5:00 PM - EP01.03.19
The Impact of Solute Segregation on Grain Boundaries in Dilute Cu Alloys

Takanori Tsurumaru

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5:00 PM - EP01.03.21
Instability of High Resistance Conductive Filaments in RRAM Cells During the Read Operation

Mohammad Al-Mamun1,Marius Orlowski1

Virginia Tech1

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5:00 PM - EP01.03.22
Highly Uniform and Wafer-Scale Integrated MoS2 Transistors

Yonghun Kim1,Eun-Joo Seo1,Dong-Ho Kim1,Jongjoo Rha1,Byungjin Cho2

Korea Institute of Materials Science1,Chungbuk National University2

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5:00 PM - EP01.03.23
An Analysis of Static and Dynamic Characteristics of 12KV 4H-SiC n-IGBT using HfO2-SiO2 Dielectric Stack at High Temperatures

Siva Prasad Kotamraju1,Pavan Kumar Vudumula1

Indian Institute of Information Technology Sricity1

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5:00 PM - EP01.03.24
Enhancing P-Type Doping of GaN for Power Electronics—A Combined Computational Experimental Approach

Timothy Johnson1,James Delaney1,Timothy Jen1,Jiaheng He1,R.S. Goldman1

University of Michigan1

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5:00 PM - EP01.03.25
Tunable Thermal Conduction in Amorphous Niobium Oxide by Oxygen Vacancy Concentration

Zhe Cheng1,Alex Weidenbach1,Marshall Tellekamp1,Brian Foley1,William Doolittle1,Samuel Graham1

Georgia Institute of Technology1

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5:00 PM - EP01.03.27
Dielectric and Ferroelectric Behaviors of PZT Thin Films Modified by Rare Earth Metals (La3+, Sc3+) for Ferroelectric Memory Applications

Mohan Bhattarai1,Karuna Mishra1,Alvaro Instan1,Sita Dugu1,Ram Katiyar1

University of Puerto Rico, Rio Piedras1

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5:00 PM - EP01.03.28
Thermal TCAD Simulations of Silicon Dioxide Conduction Blocking Layers in GaN Vertical High Electron Mobility Transistors

Izak Baranowski1,Houqiang Fu1,Hong Chen1,Xuanqi Huang1,Jossue Montes1,Tsung-Han Yang1,Yuji Zhao1

Arizona State University1

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5:00 PM - EP01.03.29
Effect of Carbon Nanotube Surface Treatment on Morphology and Electrical Properties of Cu-CNT Electrospun Nano Fibers

Farhad Daneshvar1,Tan Zhang1,Hung-Jue Sue1,Atif Aziz2,Mark Welland2

Polymer Technology Center, Texas A&M University1,Nanoscience Center, University of Cambridge2

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5:00 PM - EP01.03.30
The Effect of Leveler on the Via Filling Performance in Copper Electroplating—A Case Study of Functional Groups

SangHoon Jin1,Sung-Min Kim1,Yugeun Jo1,Woon Young Lee1,Min Hyung Lee1

Korea Institute of Industrial Technology1

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5:00 PM - EP01.03.31
The Study on Thickness Uniformity of Copper Electrodeposits Controlled by the Degree of Quaternization of Imine Functional Group

Yugeun Jo1,Sung-Min Kim1,SangHoon Jin1,Woon Young Lee1,Min Hyung Lee1

Korea Institute of Industrial Technology1

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2018-04-04   Show All Abstracts

Symposium Organizers

John Robertson, Cambridge University
Jesus del Alamo, Massachusetts Institute of Technology
Andrew Kummel, University of California, San Diego
Masaaki Niwa, Tohoku University
EP01.04: Ferroelectric HfO2 and Devices
Session Chairs
Andrew Kummel
Akira Toriumi
Wednesday AM, April 04, 2018
PCC North, 200 Level, Room 224 A

8:00 AM - EP01.04.01
Ferroelectric HfO2—Gap States Due to Dopants

Yuzheng Guo2,John Robertson1

Cambridge University1,Swansea University2

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8:15 AM - EP01.04.02
DFTMD Study of the Mechanism of Ferroelectric Stability in HfO2, ZrO2, and HZO (HfxZr1-xO2)

Andrew Kummel1,Evgueni Chagarov1,Mahmut Sami Kavrik1,Norman Stanford2,Albert Davydov2,Michael Katz2,Min-Hung Lee3

University of California, San Diego1,National Institute of Standards and Technology2,National Taiwan University3

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8:30 AM - EP01.04.03
Tuning Parameters and Their Impact on Ferroelectric Hafnium Oxide

Patrick Polakowski1,Teresa Büttner1,Tarek Ali1,Stefan Riedel1,Thomas Kämpfe1,Björn Pätzold1,Konrad Seidel1,Johannes Müller1

Fraunhofer1

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9:00 AM - EP01.04.04
Properties and Mechanisms of Fluorite-Type Ferroelectrics

Cheol Seong Hwang1,Min Hyuk Park1

Seoul National University1

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9:30 AM - EP01.04
BREAK


EP01.05: Steep Slope Devices
Session Chairs
Jesus del Alamo
John Robertson
Wednesday PM, April 04, 2018
PCC North, 200 Level, Room 224 A

10:00 AM - EP01.05.01
Kinetic Route of Ferroelectric Phase Evolution in Doped HfO2

Akira Toriumi1

University of Tokyo1

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10:30 AM - EP01.05.02
Negative Capacitance as Technology Booster for Sub-10nm CMOS and Beyond CMOS

Adrian Ionescu1,Ali Saeidi1

Ecole Polytechnique Fédérale de Lausanne (EPFL)1

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11:00 AM - EP01.05.03
Steep-Slope Transistors Based on 2D Semiconductors Contacted with the Phase-Change Material VO2

Mahito Yamamoto1,Teruo Kanki1,Azusa Hattori1,Ryo Nouchi2,Kenji Watanabe3,Takashi Taniguchi3,Keiji Ueno4,Hidekazu Tanaka1

Osaka University1,Osaka Prefecture University2,National Institute for Materials Science3,Saitama University4

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11:15 AM - EP01.05.04
Ultralow Energy Electric Field Control of Magnetism—Can We Get to1 AttoJoule/Bit?

Bhagwati Prasad1,Yen-Lin Huang1,Zuhuang Chen1,Humaira Taz2,Anoop Damodaran1,S Manipatruni3,Chia-Ching Lin3,D Nikonov3,I Young3,Ramamoorthy Ramesh1,4

University of California Berkeley1,University of Tennessee2,Intel Corp.3,University of California, Berkeley4

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11:30 AM - EP01.05.05
Quasi-1D van der Waals Metals as Beyond-the-Roadmap Interconnects

Alexander Balandin1,Guanxiong Liu1,Sergey Rumyantsev1,Matthew Bloodgood2,Tina Salguero2

University of California, Riverside1,University of Georgia2

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11:45 AM - EP01.05.06
Selective Atomic Layer Deposition of MoSix on Si (001) in Preference to Silicon Nitride and Silicon Oxide

Jong Youn Choi1,Christopher Ahles1,Raymond Hung2,Namsung Kim2,Andrew Kummel1

University of California, San Diego1,Applied Materials2

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EP01.06: Materials for STT-MRAM
Session Chairs
Jesus del Alamo
Akira Toriumi
Wednesday PM, April 04, 2018
PCC North, 200 Level, Room 224 A

1:30 PM - EP01.06.01
Material Research for High Performance of CoFeB-MgO Magnetic Tunnel Junctions for Nonvolatile VLSI

Shoji Ikeda

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2:00 PM - EP01.06.02
Challenges and Opportunities of Magnetic Tunnel Junction for Beyond the Roadmap Devices

Jane Chang1

University of California, Los Angeles1

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2:30 PM - EP01.06
BREAK


EP01.07: Resistive RAM
Session Chairs
Jane Chang
John Robertson
Wednesday PM, April 04, 2018
PCC North, 200 Level, Room 224 A

3:30 PM - EP01.07.01
Emerging Memory Scaling and High Density Integration Challenges

Nirmal Ramaswamy1

Micron Technology, Inc.1

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4:00 PM - EP01.07.02
Transport Properties of Conductive Filaments in TaOx ReRAM Devices

Carlos Rosario1,2,Bo Thöner2,Alexander Schönhals2,Stephan Menzel3,Matthias Wuttig2,Rainer Waser2,3,Nikolai Sobolev1,4,Dirk Wouters2

University of Aveiro1,RWTH Aachen University2,Forschungszentrum Jülich GmbH3,National University of Science and Technology “MISiS”4

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4:15 PM - EP01.07.03
Distributions of Forming Characteristics in NiO-Based Resistive Switching Cells with Two Kinds of NiO Crystallinity

Yusuke Nishi1,Tsunenobu Kimoto1

Kyoto University1

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4:30 PM - EP01.07.04
Robust Resistive Memory Devices Using Solution-Processable Metal-Coordinated Azo-Aromatics

Sreetosh Goswami1,Santi Rath2,Svante Hedstrom3,Victor Batista3,Sreebrata Goswami2,Thirumalai Venkatesan1

National Univ of Singapore1,Indian Association for the Cultivation of Science2,Yale University3

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4:45 PM - EP01.07.05
Resistance Increase by Overcurrent Suppression in Forming Process in Pt/TiO2/Pt Cells

Ryosuke Matsui1,Yutaka Kuriyama1,Yusuke Nishi1,Tsunenobu Kimoto1

Kyoto Univ.1

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2018-04-05   Show All Abstracts

Symposium Organizers

John Robertson, Cambridge University
Jesus del Alamo, Massachusetts Institute of Technology
Andrew Kummel, University of California, San Diego
Masaaki Niwa, Tohoku University
EP01.08: Transition Metal Dichalcogenides
Session Chairs
David Geohegan
Chris Hinkle
Thursday AM, April 05, 2018
PCC North, 200 Level, Room 224 A

8:00 AM - EP01.08.01
Epitaxial Growth of Molybdenum Disulfide on Gallium Nitride

Robert Burke1,2,Kehao Zhang3,Dmitry Ruzmetov1,Andrew Herzing4,Mahesh Neupane1,Anthony Birdwell1,Terrance O'Regan1,Berc Kalanyan4,Matthew Chin1,Alexander Mazzoni1,Scott Walck1,Michael Valentin1,5,Barbara Nichols1,Albert Davydov4,Joshua Robinson3,Tony Ivanov1,Madan Dubey1

U.S. Army Research Laboratory1,General Technical Services, LLC2,The Pennsylvania State University3,National Institute of Standards and Technology4,University of California, Riverside5

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8:15 AM - EP01.08.02
Investigation of the Impact of Plasma-Enhanced ALD on MoS2 Using Raman Spectroscopy and Photoluminescence

Katherine Price1,2,Sina Najmaei2,Madan Dubey2,Aaron Franklin1

Duke University1,U.S. Army Research Laboratory2

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8:30 AM - EP01.08.03
Mobility Enhancement of Pulsed Laser Deposited MoS2 Thin Film by Engineering Interfaces

Ankur Goswami1,Ryan McGee1,Soupitak Pal2,Syed Asad Manzoor Bukhari1,Thomas Thundat1

University of Alberta1,University of California Santa Barbara2

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8:45 AM - EP01.08.04
Phase Controlled Growth of 2D Tin Sulfides

Zafer Mutlu1,Ryan Wu2,Bishwajit Debnath1,Mihri Ozkan1,Roger Lake1,Cengiz Ozkan1

University of California, Riverside1,University of Minnesota, Twin Cities2

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9:00 AM - EP01.08.05
Wafer Scale Two-Dimensional Transition Metal Dichacogenide Materials and Devices

Linyou Cao1

North Carolina State University1

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9:30 AM - EP01.08
BREAK


10:00 AM - EP01.08.06
2D Materials and Heterostructures—Opportunities and Challenges

Xiangfeng Duan1

University of California, Los Angeles1

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10:30 AM - EP01.08.07
2D Semiconductor Electronics—Advances, Challenges and Opportunities

Ali Javey1

University of California, Berkeley1

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11:00 AM - EP01.08.08
Methods of Passivating Sulfur Vacancies in 2D MoS2

Haichang Lu1,John Robertson1

Cambridge University1

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11:15 AM - EP01.08.09
Chemical Vapor Deposition of 2D Semiconducting SnS2 and SnS Using SnCl4 and H2S

Haodong Zhang1,2,Thomas van Pelt2,Yashwanth Balaji2,Ankit Nalin Mehta2,Matty Caymax2,Iuliana Radu2,Wilfried Vandervorst2,Annelies Delabie1,2

KU Leuven1,Imec2

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11:30 AM - EP01.08.10
Doping in Two-Dimensional Semiconductors: Spin-on-Diffussants and Ion Implantation for Carrier Density Control

Surajit Sutar1,Daniele Chiappe1,Inge Asselberghs1,Dennis Lin1,Iuliana Radu1

IMEC1

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11:45 AM - EP01.08.11
Band Edge States, Defects and Dopants in Layered Semiconductors HfS2 and SnS2

John Robertson1,Haichang Lu1

University of Cambridge1

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EP01.09: 2D Materials Growth and Properties
Session Chairs
David Geohegan
Chris Hinkle
Thursday PM, April 05, 2018
PCC North, 200 Level, Room 224 A

1:30 PM - EP01.09.01
Material Challenges in Next Generation Electronics and Opportunities in 2D Material-Based Layer Transfer Technique

Jeehwan Kim

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2:00 PM - EP01.09.02
Ferroelectric Domain Control of Photoluminescence in Monolayer WS2 / PZT Hybrid Structures

Berend Jonker1,Connie Li1,Kathleen McCreary1

Naval Research Laboratory1

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2:15 PM - EP01.09.03
Thickness-Dependent Structural and Electronic Properties of 2D/3D Heterostructures

Mahesh Neupane1,DeCarlos Taylor1,Dmitry Ruzmetov1,Robert Burke1,2,Anthony Birdwell1,Andrew Herzing3,Terrance O'Regan1,Edward Byrd1,Tony Ivanov1

U.S. Army Research Laboratory1,General Technical Services LLC2,National Institute of Standards and Technology3

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2:30 PM - EP01.09
BREAK


3:30 PM - EP01.09.04
Toward Synthetic Control over Heterogeneity and Functionality in Optoelectronic Two-Dimensional Materials

David Geohegan1,Alexander Puretzky1,Kai Xiao1,Kai Wang1,Mina Yoon1,Xiaoming Liu1,Raymond Unocic1,Bernadeta Srijanto1,Juan Carlos Idrobo1,Christopher Rouleau1,Akinola Oyedele1,Liangbo Liang1,Bobby Sumpter1,Gyula Eres1,Mengkun Tian2,Gerd Duscher2,Feng Ding3,Henry Yu4,Nitant Gupta4,Boris Yakobson4,Masoud Mahjouri-Samani5,Xufan Li6,Abdelaziz Boulesbaa7

Oak Ridge National Laboratory1,University of Tennessee, Knoxville2,4) Ulsan National Institute of Science and Technology (UNIST)3,Rice University4,Auburn University5,Honda Research Institute6,California State University, Northridge7

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4:00 PM - EP01.10.05
One-Volt Switching of Ferromagnetism at Room Temperature

Yen-Lin Huang1,Bhagwati Prasad1,Zuhuang Chen1,Allen Farhan1,Anoop Damodaran1,S Manipatruni2,Chia-Ching Lin2,D Nikonov2,I Young2,Ramamoorthy Ramesh1

University of California, Berkeley1,Intel Corporation2

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4:15 PM - EP01.09.06
Stoichiometry of Atomic-Layer-Deposition-Grown MoOx Controls Carrier Concentration in Monolayer MoS2

Alex Henning1,Michael Moody1,Ju Ying Shang1,Hadallia Bergeron1,Itamar Balla1,Titel Jurca1,Tobin Marks1,Mark Hersam1,Lincoln Lauhon1

Northwestern University1

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4:30 PM - EP01.09.07
Optical Control of Polarization in MoS2/BTO Heterostructures

Tao Li1,Alexey Lipatov1,Haidong Lu1,Hyungwoo Lee2,Jung-Woo Lee2,Engin Torun3,Ludger Wirtz3,Chang-Beom Eom2,Jorge Íñiguez4,Alexander Sinitskii1,Alexei Gruverman1

University of Nebraska--Lincoln1,University of Wisconsin-Madison2,University of Luxembourg3,Luxembourg Institute of Science and Technology4

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4:45 PM - EP01.09.08
Chemical Doping Effects on Multilayer MoSe2

Hocheon Yoo1,Seongin Hong2,Hyunseong Moon2,Sungmin On1,Hyungju Ahn3,Han-Koo Lee3,Sunkook Kim2,Young Ki Hong2,Jae-Joon Kim1

Pohang University of Science and Technology1,Sungkyunkwan University2,Pohang Accelerator Laboratory3

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2018-04-06   Show All Abstracts

Symposium Organizers

John Robertson, Cambridge University
Jesus del Alamo, Massachusetts Institute of Technology
Andrew Kummel, University of California, San Diego
Masaaki Niwa, Tohoku University
EP01.10: 2D Materials, Devices and Optical Properties
Session Chairs
Friday AM, April 06, 2018
PCC North, 200 Level, Room 224 A

8:00 AM - EP01.10.01
Strain Engineering and Two-Dimensional Electron Gas in Polar ε-Ga2O3

Sung Beom Cho1,Praneeth Ranga2,Sriram Krishnamoorthy2,Rohan Mishra1

Washington University in St. Louis1,The University of Utah2

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8:15 AM - EP01.10.02
Anisotropic Optical Properties of Exfoliated Thin-Film β-Ga2O3

Sandhaya Koirala1,Seon Namgung Namgung1,Mahmoud Atalla1,Matthew C. Robbins1,Rui Ma1,Sang-Hyun Oh1,Steven Koester1

University of Minnesota1

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8:30 AM - EP01.10.03
Low-Temperature Delta Phase HC(NH2)2PbI3 for Efficient Resistive Switching Memory Material

June-Mo Yang1,2,Nam-Gyu Park1,2

Sungkyunkwan University1,Sungkyunkwan University Advanced Institute of NanoTechnology2

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8:45 AM - EP01.10.04
A Dry NF3/NH3 Plasma Clean for Removing Si Native Oxide and Leaving a Smooth Si Surface

Christopher Ahles1,Jong Youn Choi1,Andrew Kummel1

University of California, San Diego1

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9:00 AM - EP01.10.05
TiNx and TaNx Films via Low-Temperature Thermal ALD Using Anhydrous N2H4

Steven Wolf1,Michael Breeden1,Mahmut Sami Kavrik1,Jun Hong Park1,Daniel Alvarez2,Mehul Naik3,Andrew Kummel1

University of California, San Diego1,Rasirc2,Applied Materials3

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9:15 AM - EP01.10.06
Intrinsic and Induced Surface Defects in MoSe2

Rafik Addou1,Christopher Cormier1,Christopher Smyth1,Robert Wallace1

The University of Texas at Dallas1

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9:30 AM - EP01.10.07
TMDs and Topological Insulators Grown by van der Waals Epitaxy for Back-End-of-Line Transistors with High Mobility

Chris Hinkle1

University of Texas at Dallas1

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10:00 AM - EP01.10
BREAK


10:30 AM - EP01.10.08
Graphene- and MoS2-Ferroelectric Heterostructures for Memory Applications with Dual Optical and Electrical Switching

Alexey Lipatov1,Pankaj Sharma1,Tao Li1,Alexei Gruverman1,Alexander Sinitskii1

University of Nebraska – Lincoln1

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10:45 AM - EP01.10.09
Few-Layer Rhenium Disulfide Synthesized Via Chemical Vapor Deposition

Michael Valentin1,2,Alison Guan1,Ariana Nguyen1,I Hsi Lu1,Cindy Merida1,Michael Gomez1,Madan Dubey2,Ludwig Bartels1

University of California, Riverside1,U.S. Army Research Laboratory2

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11:00 AM - EP01.10.10
Raman Spectroscopy of Monoclinic Structures of Niobium Trisulfide

Ece Aytan1,Fariborz Kargar1,Matthew Bloodgood2,Adane Geremew1,Tanya Balandin1,Jacob Lewis1,Guanxiong Liu1,Tina Salguero2,Alexander Balandin1

University of California, Riverside1,University of Georgia2

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11:15 AM - EP01.10.11
Monitoring the Surface Functionalization of MoS2 and WSe2 for High-k Integration Using In Situ Resonant Raman Spectroscopy—A First-Principles Study

Qingkai Qian1,Zhaofu Zhang1,Kevin J Chen1

The Hong Kong University of Science and Technology1

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11:30 AM - EP01.10.12
Titanium Trisulfide (TiS3) for Electronic and Sensor Applications

Alexey Lipatov1,Philip Yox1,Andrey Lashkov2,Peter Wilson1,Jun Dai1,Xiao Cheng Zeng1,Victor Sysoev2,Alexander Sinitskii1

University of Nebraska - Lincoln1,Gagarin State Technical University of Saratov2

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11:45 AM - EP01.10.13
GaN on Si with Er2O3 Buffer Layer—Epitaxial Growth Technology and Application in Photonics

Tomas Grinys1,Tomas Drunga1,Rytis Dargis2

Vilnius University, Institute of Photonics and Nanotechnology1,IQE Inc.2

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EP01.11: Various New Materials
Session Chairs
Friday PM, April 06, 2018
PCC North, 200 Level, Room 224 A

1:30 PM - EP01.11.01
The Influence of Gd(III)-Doping on the Electrical Switching Characteristics of Micro-Thick HfO2 Memristors for Environmental Radiation Sensing

Baker Mohammad1,Lama Mahmoud1,Maguy Abi Jaoude1,Sabina Abdulhadi1,Hamda Al Shehhi1

Khalifa University of Science and Technology and the UAE Space Agency1

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1:45 PM - EP01.11.02
PZT Back Gated 2D Layered MoS2 Field Effect Transistors for Ferroelectric Memories

Lakshmi Ganapathi Kolla1,Martando Rath1,Mamidanna Ramachandra Rao1

Indian Institute of Technology-Madras1

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2:00 PM - EP01.11.03
Al2O3 and HfO2/Si0.7Ge0.3 Interface Trap State Reduction via In Situ N2/H2 Downstream Plasma Passivation

Michael Breeden1,Steven Wolf1,Scott Ueda1,Kechao Tang2,Andrew Kummel1

University of California, San Diego1,Stanford University2

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2:15 PM - EP01.11.04
Few Wall Carbon Nanotube Coils

Dekel Nakar1,Georgy Gordeev2,Eliézer R. de Oliveria3,Ronit Popovitz-Biro1,Patryk Kusch2,Katya Rechav1,Leonardo Machado4,Ado Jorio5,Douglas Galvao3,Stephanie Reich2,Ernesto Joselevich1

Weizmann Institute of Science1,Freie Universitat Berlin2,University of Campinas - UNICAMP3,Federal University of Rio Grande do Norte4,Federal University of Minas Gerais5

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2:30 PM - EP01.11.05
Large-Scale DFT Calculations for the Discovery of Novel Nanotubes

Sarah Allec1,Bryan Wong1,Niranjan Ilawe1

University of California Riverside1

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2:45 PM - EP01.11
BREAK


3:15 PM - EP01.11.06
Single-Crystal Templates of Compound Semiconductors on Diverse Substrates from Confined Liquid Metals

Debarghya Sarkar1,Wei Wang1,Chenhao Ren1,Matthew Mecklenburg1,Andrew Clough1,Qingfeng Lin1,Rehan Kapadia1

USC1

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