Chairs

Randy J. Shul, Sandia National Laboratories
Fan Ren, AT&T Bell Laboratories
Stephen J. Pearton, University of Florida
Chan-Shin Wu, Hughes Aircraft Company

Symposium Support

Sandia National Laboratories
AT&T Bell Laboratories
Hughes Aircraft Company
Plasma Therm I.P.

*Invited Paper

SESSION C1: GROWTH AND CHARACTERIZATION
Chairs: R.J. Shul and C.R. Abernathy
Monday Morning, April 8
Sunset C

8:30 A.M. *C1.1
GAS-SOURCE MOLECULAR BEAM EPITAXY OF ELECTRONIC DEVICES, E.A. Beam III, Texas Instruments, Department of Materials Science Laboratory, Dallas, TX; A.C. Seabaugh, H.F Chau, W. Liu and T.P.E. Broekaert, Texas Instruments, Inc., Department of Systems Components Laboratory, Dallas, TX.

9:00 A.M. C1.2
SELECTIVE-AREA EPITAXY AND IN-SITU ETCHING OF III-V COMPOUNDS BY CHEMICAL BEAM EPITAXY, Nein-Yi Li and Charles W. Tu, University of California San Diego, Department of Electrical and Computer Engineering, La Jolla, CA.

9:15 A.M. C1.3
INTRINSIC N-TYPE MODULATION DOPING IN InP-BASED HETEROSTRUCTURES, W.M. Chen, I.A. Buyanova, A. Buyanov, Linköping University, Department of Physics, Linköping, Sweden; W.G. Bi and C.W. Tu, University of California, Department of Electrical and Computer Engineering, LaJolla, CA.

9:30 A.M. C1.4
GROWTH AND CHARACTERIZATION OF SILICON DELTA-DOPED GaInP GROWN BY LOW-PRESSURE METALORGANIC CHEMICAL VAPOR DEPOSITION, Chien-Jen Wang, National Chiao-Tung University, Institute of Electronics and National Nano Device Laboratory, Hsinchu, Taiwan; Shih-Hsiung Chang, National Nano Device Laboratory, Hsinchu, Taiwan; Ming-Shiann Feng, National Chio-Tung University, Institute of Material Science and Engineering and National Nano Device Laboratory, Hsinchu, Taiwan; Chun-Yen Chang, Simon Min Sze and Wen-Chung Tsai, National Chiao-Tung University, Institute of Electronics and National Nano Device Laboratory, Hsinchu, Taiwan.

9:45 A.M. C1.5
OXYGEN-RELATED DEFECTS IN HIGH PURITY MOVPE AlGaAs, J.M. Ryan, J.W. Huang, T.F. Kuech and K.L. Bray, University of Wisconsin-Madison, Chemical Engineering Department, Madison, WI.

10:00 A.M. BREAK

10:30 A.M. C1.6
HYDROGEN EFFECTS ON MATERIAL CHARACTERISTICS OF CARBON-DOPED GaAs, W.Y. Han, M.W. Cole, K.A. Jones, S.N. Schauer, R.P. Mocrkirk, Army Research Laboratory, Fort Monmouth, NJ; Y. Lu, Rutgers University, Department of Electrical and Computer Engineering, Piscataway, NJ; and L.W. Yang, Ford Microelectronics, Inc., Colorado Spring, CO and Martin Marietta Electronics Laboratory, Syracuse, NY.

10:45 A.M. C1.7
THE GROWTH OF N- AND P-TYPE Al(As)Sb BY METAL-ORGANIC CHEMICAL VAPOR DEPOSITION, R.M. Biefeld, A.A. Allerman and M.W. Pelczynski, Sandia National Laboratories, Albuquerque, NM.

11:00 A.M. C1.8
A PSEUDOMORPHIC InAsSb MULTIPLE QUANTUM WELL INJECTION LASER EMITTING AT 3.5 um, A.A. Allerman. R.M. Biefeld, S.R. Kurtz and M.W. Pelczynski, Sandia National Laboratories, Albuquerque, NM.

11:15 A.M. C1.9
CHARACTERISATION OF InAs/AlSb/GaSb HETEROSTRUCTURES FOR IR OPTOELECTRONICS, J. Wagner, J. Schmitz, F. Fuchs, U. Weimar, N. Herres and P. Koidl, Fraunhofer-Institut für Angewandte Festkörperphysik, Freiburg, Germany.

11:30 A.M. C1.10
THEORETICAL STUDY OF InTlSb/InAsSb SUPERLATTICE FOR FAR INFRARED DETECTOR, Shanthi Iyer, North Carolina A&T State University, Department of Electrical Engineering, Greensboro, NC; K.K. Bajaj, Emory University, Physics Department, Atlanta, GA; Shahnaz Chowdhury-Nagle and Jie Li, North Carolina A&T State University, Department of Electrical Engineering, Greensboro, NC.

11:45 A.M. C1.11
HIGH QUALITY In(Ga)AsP/InP COMPRESSIVE STRAINED QUANTUM WELL STRUCTURES GROWN BY LP-MOCVD, J.T. Zhu, A.R. Clawson and P.K.L. Yu, University of California at San Diego, ECE Department, LaJolla, CA.

SESSION C2: VCSELs AND PASSIVATION
Chairs: R. Shepherd and E.A. Beam
Monday Afternoon, April 8
Sunset C

1:30 P.M. *C2.1
EPITAXIAL DESIGN AND GROWTH CONSIDERATIONS FOR VERTICAL-CAVITY LASERS, R.P. Schneider Jr., S.W. Corzine, M.R. Tan, Y.M. Houng and S.G. Hummel, Hewlett Packard Laboratories, Palo Alto, CA; M. Hagerott Crawford, K.D. Choquette and K.P. Killeen, Sandia National Laboratories, Albuquerque, NM.

2:00 P.M. *C2.2
SELECTIVE OXIDATION OF BURIED AlGaAs FOR FABRICATION OF VERTICAL CAVITY LASERS, Kent D. Choquette, Kent M. Geib, Photonics Research Department, Sandia National Laboratories, Albuquerque, NM; Herman C. Chui, Hong Hou, Semiconductor Materials Department, Sandia National Laboratories, Albuquerque, NM; and Robert Hull, University of Virginia, Materials Science Department, Charlottesville, VA.

2:30 P.M. *C2.3
LONG-WAVELENGTH VERTICAL-CAVITY SURFACE-EMITTING LASER DIODES, Vijay Jayaraman, Optical Concepts, Lompoc, CA.

3:00 P.M. BREAK

3:30 P.M. C2.4
STABILIZATION OF TRANSVERSE MODE EMISSION IN VERTICAL-CAVITY SURFACE-EMITTING LASERS BY DEPOSITION OF HIGH REFRACTIVE INDEX AMORPHOUS GaAs, H.-H. Park, B.-S. Yoo, H.Y. Chu and E.H. Lee, ETRI, Teajon, Korea; M.S. Park, B.T. Ahn, J.-H. Shin and Y.H. Lee, KAIST, Taejon, Korea.

3:45 P.M. *C2.5
LOW INTERFACE STATE DENSITY OXIDE-GaAs STRUCTURES FABRICATED BY IN-SITU MOLECULAR-BEAM EPITAXY, M. Passlack, Phoenix Corporate Research Laboratories, Tempe, AZ; and M. Hong, AT&T Bell Laboratories, Murray Hill, NJ.

4:15 P.M. C2.6
SURFACE PASSIVATION OF GaAs-BASED PHEMT BY HYDROGEN ION IRRADIATION, Song Stone Shi, Ying-lan Chang, Evelyn L. Hu, University of California, Center for Quantized Electronic Structures, Santa Barbara, CA; and Julia J. Brown, Hughes Research Laboratories, Malibu, CA.

4:30 P.M. C2.7
ORIENTATION DEPENDENCE FOR SURFACE PASSIVATION OF GaAs, I.P. Koutzarov, C. Edirisinghe, L.Z. Jedral, H.F. Ruda, Q. Liu, J. Guo-Ping, University of Toronto, Electronics Materials Group, Department of Metallurgy and Materials Science, Ontario, Canada; H. Xia, W.N. Leonard and L. Rodriquez-Fernandez, University of Western Ontario, Interface Science Western, Ontario, Canada.

4:45 P.M. C2.8
SURFACE STABILIZATION OF InP USING CdS THIN FILMS, A. Davis, H.M. Dauplaise, K. Vaccaro, B.G. Demczyk and J.P. Lorenzo, Rome Laboratory, RL/EROC, Hanscom Air Force Base, MA.

SESSION C3: RELIABILITY, STRAIN AND NANOSTRUCTURES
Chair: J.C.Zolper and J.R. Flemish
Tuesday Morning, April 9
Sunset C

8:30 A.M. *C3.1
A DEFECT MAP FOR DEGRADATION OF InGaAsP/InP LONG WAVELENGTH LASER DIODES, S.N.G. Chu, AT&T Bell Laboratories, Murray Hill, NJ; and S. Nakahara, Solid State Technology Center, AT&T Bell Laboratories, Breinigsville, PA.

9:00 A.M. *C3.2
THE EFFECTS OF BASE DOPANT OUTDIFFUSION ON LOW FREQUENCY NOISE CHARACTERISTICS OF AlGaAs/GaAs HETEROJUNCTION BIPOLAR TRANSISTORS, Y.C. Chou and G.P. Li, University of California, Department of Electrical and Computer Engineering, Irvine, CA.

9:30 A.M. *C3.3
GAIN PROPERTIES OF SiGe/Si STRAINED-LAYER SUPERLATTICE AVALANCHE PHOTODIODE, Feng-yi Huang, Xuegen Zhu and Kang L. Wang, University of California, Department of Electrical Engineering, Los Angeles, CA.

10:00 A.M. BREAK

10:30 A.M. C3.4
FINITE ELEMENT CALCULATIONS TO OPTIMIZE THE DESIGN OF A STRESSOR FOR HIGH PERFORMANCE STRAINED INDUCED QUANTUM WIRES AND QUANTUM DOTS IN GaAs, S.C. Jain, K. Pinardi and H.E. Maes, IMEC, Leuven, Belgium.

10:45 A.M. *C3.5
BAND-STRUCTURE ENGINEERING IN NOVEL OPTOELECTRONIC DEVICES, H. Shen and M. Dutta, United States Army Research Laboratory, Physical Science Directorate, Fort Monmouth, NJ.

11:15 A.M. C3.6
TEM STRUCTURAL CHARACTERIZATION OF NM-SCALE ISLANDS IN HIGHLY MISMATCHED SYSTEMS, S. Ruvimov, Lawrence Berkeley National Laboratory, Berkeley, CA; N.N. Ledentsov, V.M. Ustinov, P.S. Kop'ev, Ioffe Institute, St. Petersburg, Russia; D. Bimberg, Technical University of Berlin, Berlin, Germany; P. Werner, K. Scheerschmidt, Max-Planck-Institute of Microstructure Physics, Halle, Germany; Z. Liliental-Weber, Lawrence Berkeley Laboratory, Berkeley, CA; and Zh.I. Alferov, Ioffe Institute, St. Petersburg, Russia.

11:30 A.M. C3.7
SYNTHESIS OF GALLIUM ARSENIDE NON-PARTICLES BY DIGITAL RF-SPUTTERING, Makoto Hirasawa, Hiroshi Komiyama and Yasuyiki Egashira, University of Tokyo, Department of Chemical System Engineering, Tokyo, Japan.

11:45 A.M. C3.8
LEAD SULPHIDE QUANTUM PARTICLES WITH ABSORPTION BAND ONSET IN THE NEAR INFRA RED, Jerome C. Bhat, Tharmalingam Krishnakumar, University of Oxford, Department of Engineering Science, Oxford, United Kingdom; Rekha R. Nayak, Oleg V. Salata, John L. Hutchison, University of Oxford, Department of Materials, Oxford, United Kingdom; and Peter J. Dobson, University of Oxford, Department of Engineering Science, Oxford, United Kingdom.

SESSION C4: PROCESSING AND PROPERTIES OF III-V'S
Chairs: R.J. Shul and S.J. Pearton
Tuesday Afternoon, April 9
Sunset C

1:30 P.M. *C4.1
PLASMA ETCHING OF SILICON CARBIDE FOR DEVICE FABRICATION, J.R. Flemish, K. Xie and G.F. McLane, Physical Sciences Directorate, Army Research Laboratory, Fort Monmouth, NJ.

2:00 P.M. C4.2
CLEAVED FACETS IN GaN BY WAFER FUSION OF GaN TO InP, R.K. Sink, University of California, Santa Barbara, Department of Electrical and Computer Engineering, Santa Barbara, CA; S. Keller, B.P. Keller, University of California, Santa Barbara, Materials Department, Santa Barbara, CA; A. Holmes, University of California, Santa Barbara, Department of Electrical and Computer Engineering, Santa Barbara, CA; D. Kapolnek, X. Wu, University of California, Santa Barbara, Materials Department, Santa Barbara, CA; D. I. Babic, J.E. Bowers, University of California, Santa Barbara, Department of Electrical and Computer Engineering, Santa Barbara, CA; S. DenBaars and J.S. Speck, University of California, Santa Barbara, Materials Department, Santa Barbara, CA.

2:15 P.M. *C4.3
STRAIN EFFECTS ON OPTICAL GAIN PROPERTY OF GaN/AlGaN QUANTUM WELL LASERS, Masakatsu Suzuki and Takeshi Uenoyama, Matsushita Electric Industrial Co., Central Research Laboratories, Kyoto, Japan.

2:45 P.M. C4.4
ABSOLUTE INTERNAL QUANTUM EFFICIENCY OF AN InGaN/GaN QUANTUM WELL, Eli Yablonovitch, Charles P. Reese, UCLA, Department of Electrical Engineering, Los Angeles, CA; Steven P. DenBaars, Stacia Keller and B. Keller, University of California, Santa Barbara, Materials Department, Santa Barbara, CA.

3:00 P.M. BREAK

3:30 P.M. C4.5
STUDIES OF DEGRADATION IN NICHIA AlGaN/InGaN/GaN BLUE LIGHT EMITTING DIODES UNDER CLOSE TO NORMAL OPERATING CONDITIONS, Marck Osinski, Piotr Perlin, University of New Mexico, Albuquerque, NM; Philippe Satori, Nationale Supérieure des Télécommunications, Paris, France; B. Scott Phillips, University of New Mexico, Albuquerque, NM; Daniel L. Barton, Christopher J. Helms and Niel Berg, Sandia National Laboratories, Albuquerque, NM.

3:45 P.M. C4.6
GATE FORMATION FOR HIGH TEMPERATURE GaN FIELD EFFECT TRANSISTORS, I. Adesida, A.C. Schmitz, A.T. Ping, University of Illinois, Center for Compound Semiconductor Microelectronics, Urbana-Champaign, IL; and M.A. Khan, APA Optics Inc., Blaine, MN.

4:00 P.M. C4.7
PHOTOLUMINESCENCE STUDY OF CHLORIDE VPE-GROWN GaN, T. Ueda, M. Yuri, H. Lee, J.S. Harris Jr., Stanford University, Department of Electrical Engineering, Stanford, CA; and T. Baba, Matsushita Electronics Corporation, Electronics Research Laboratory, Palo Alto, CA.

4:15 P.M. C4.8
VAPOR PHASE EPITAXY OF GaN USING GALLIUM TRI-CHLORIDE AND AMMONIA, M. Yuri, T. Ueda, H. Lee, Stanford University, Department of Electrical Engineering, Stanford, CA; K. Itoh, T. Baba, Matsushita Electronics Corporation, Electronics Research Laboratory, Osaka, Japan; J.S. Harris Jr., Stanford University, Department of Electrical Engineering, Stanford, CA.

4:30 P.M. C4.9
SYNTHESIS AND CHARACTERIZATION OF GAN QUANTUM DOTS, Ravindra S. Kane, Robert E. Cohen, Massachusetts Institute of Technology, Department of Chemical Engineering, Cambridge, MA; and Robert Silbey, Massachusetts Institute of Technology, Chemistry Department, Cambridge, MA.

4:45 P.M. C4.10
INVESTIGATION OF GaSb/InAs TYPE II SUPERLATTICES FOR INFARED PHOTODETECTORS, D.K. Sengupta, W. Wohlmuth, H.C. Kuo, K.Y. Cheng, I. Adesida, M. Feng and G.E. Stillman, University of Illinois, Department of Electrical and Computer Engineering, Urbana, IL.

SESSION C5: POSTER SESSION
GROWTH AND PROCESSING POSTER SESSION
Chairs: S.J. Pearton and C.S. Wu
Tuesday Evening, April 9
8:00 P.M.
Presidio Ballroom

C5.1 INVESTIGATION OF DEEP-LEVEL DEFECTS IN 10 MeV ELECTRONS IRRADIATED SI-GaAs, Wu Fengmei, Li Haifeng, Nanjing University, Department of Physics, Nanjing, China; and Zhao Zhouying, Nanjing Electronic Devices Institute, Nangjing, China.

C5.2 A STUDY OF ANNEALING BEHAVIOR OF EL2 AND EL6 GROUPS IN SI-GaAs, Fengmei Wu, Nanjing University, Department of Physics, Nanjing, China; and Zhouying Zhao, Nanjing Electronic Devices Institute, Nanjing, China.

C5.3 THE ELECTRIC FIELD MEASURING BY PHASE SELECTIVE PHOTOREFLECTANCE, Jenn-Shyong Hwang, Shing-Long Tyan, Yau-Chyr Wang and Paul H. Shen, National Cheng Kung University, Department of Physics, Tainan, Taiwan.

C5.4 GROWTH AND CHARACTERIZATION OF GaAs EPITAXIAL LAYERS BY MOCVD, Saluru B. Krupanidhi, Indian Institute of Science, Materials Research Centre, Bangalore, India; and Mantu K. Hudait, Bharat Electronics, Central Research Laboratories, Bangalore, India.

C5.5 FORMATION OF NEW SEMICONDUCTING Ge-Si-Fe ALLOY ON Si(100) AND ITS OPTICAL PROPERTIES, Hao Chen, Ping Han, Xiaodong Huang, Liqun Hu, Yi Shi and Youdou Zheng, Nanjing University, Physics Department, Jiangsu, China.

C5.6 THEMOPHYSICAL AND THERMODYNAMIC PROPERTIES OF Hg1-xZnxTe PSEUDOBINARY MELTS, Ching-Hua Su, Yi-Gao Sha, K. Mazuruk and S.L. Lehoczky, Space Science Laboratory, NASA Marshall Space Flight Center, Huntsville, AL.

C5.7 A STUDY OF LOW-TEMPERATURE GROWN GAP BY GAS-SOURCE MOLECULAR BEAM EPITAXY, W.G. Bi, X.B. Mei, K.L. Kavanagh and C.W. Tu, University of California, Department of Electrical and Computer Engineering, San Diego, CA.

C5.8 ATOMIC FORCE MICROSCOPE CHEMICALLY INDUCED DIRECT PROCESSING OF GaAs AND NiAl, Barden N. Shimbo, James S. Harris, Yoshitaka Okada, Serguei Komarov and Bartev J. Vartanian, Stanford University, Department of Electrical Engineering, Stanford, CA.

C5.9 Cl2-BASED FOR ECR ETCHING OF InGaP, AlInP AND AlGaP, J. Hong, J.W. Lee, S.J. Pearton, C. Santana, C.R. Abernathy, University of Florida, Gainesville, FL; W.S. Hobson and F. Ren, AT&T Bell Laboratories, Murray Hill, NJ.

C5.10 OPTICAL PROPERTIES AND ELECTRONIC STRUCTURE OF INDIUM NITRIDE THIN FILMS, V. Ya. Malakhov, National Academy of Materials Science, Institute for Problems of Materials Science, Kiev, Ukraine.

C5.11 GROWTH OF EPITAXIAL GaN FILM USING ZNO BUFFER LAYER BY PULSED LASER DEPOSITION, T.F. Huang and J.S. Harris, Stanford University, Solid State Laboratory, Stanford, CA.

C5.12 PLASMA CHEMISTRIES FOR DRY ETCHING GaN, InGaN AND InAiN, S.J. Pearton, University of Florida, Gainesville, FL; R.J. Shul, Sandia National Laboratories, Albuquerque, NM; G.F. McLane, Army Research Laboratory, Ft. Monmouth, NJ; and F. Ren, AT&T Bell Laboratories, Murray Hill, NJ.

C5.13 DRY ETCHING OF InGaP AND AlInP IN CH4/H2/Ar, J.W. Lee, S.J. Pearton, C.J. Santana, E.S. Lambers, C.R. Abernathy, University of Florida, Gainesville, FL; W.S. Hobson and F. Ren, AT&T Bell Laboratories, Murray Hill, NJ.

C5.14 PASSIVATION OF CARBON DOPING IN InGaAs DURING ECR-CVD OF SiNx, F. Ren, R.A. Hamm, AT&T Bell Laboratories, Murray Hill, NJ; R.G. Wilson, Hughes Research Laboratories, Malibu, CA; S.J. Pearton, University of Florida, Gainesville, FL; and J.R. Lothian, AT&T Bell Laboratories, Murray Hill, NJ.

C5.15 (Er,Zn)-DOPED GaSb PLANAR PHOTODIODES GROWN BY LIQUID-PHASE EPITAXY, Meng-Chyi Wu, Yuh-Maoh and Jyh-Ming Wang, National Tsing Hua University, Research Institute of Electrical Engineering, Hsinchu, Taiwan.

C5.16 MOVPE OF INP AND GaAs BASED OPTOELECTRONIC MATERIALS IN A MULTIWAFER PRODUCTION REACTORS USING TBA AND TBP EXCLUSIVELY, D. Schmitz, G. Lengeling, R. Beccard and H. Juergensen, AIXTRON GmbH, Aachen, Germany.

C5.17 MOLECULAR BEAM EPITAXIAL GROWTH AND PROPERTIES OF HgCdTe VERY LONG WAVE INFRARED DETECTORS, Rajesh D. Rajavel, Hughes Research Laboratory, Malibu, CA.

C5.18 POLARIZATION CONTROL OF VERTICAL-CAVITY SURFACE-EMITTING LASERS BY TILTED-ETCHING OF CAVITY, H.Y. Chu, B.-S. Yoo, M.S. Park and H.-H. Park, ETRI, Basic Research Department, Taejon, Korea.

C5.19 PROPERTIES OF H, O AND C IN GaN, S.J. Pearton, C.R. Abernathy, J.W. Lee, C.B. Vartuli, J.D. MacKenzie, University of Florida, Gainesville, FL; F. Ren, AT&T Bell Laboratories, Murray Hill, NJ; R.G. Wilson, Hughes Research Laboratories, Malibu, CA; J.M. Zavada, US Army Research Laboratory, Research Triangle Park, NC; R.J. Shul and J.C. Zolper, Sandia National Laboratories, Albuquerque, NM.

C5.20 LONG WAVELENGTH SHIFTING AND BROADENING OF QUANTUM WELL INFRARED PHOTODETECTOR RESPONSE VIA RAPID THERMAL ANNEALING, D.K. Sengupta, W.C. Fang, T. Horton, H.C. Kuo, J.I. Malin, N.F. Gardner, B. Flachsbart, S.L. Chuang, K.C. Hsieh, K.Y. Cheng, I. Adesida, M. Fend and G.E. Stillman, Center for Compound Semiconductor Microelectronics, Urbana, IL.

C5.21 ANALYSIS OF RADIATIVE RECOMBINATION AND OPTICAL GAIN IN GALLIUM NITRIDE-BASED HETEROSTRUCTURES, Petr G. Eliseev, Lebedev Physics Institute, Moscow, Russia; Vladimir G. Smagley and Marek Osinski, University of New Mexico, Albuquerque, NM.

SESSION C6: IMPLANTATION AND DEVICES
Chairs: F. Ren and K.D. Choquette
Wednesday Morning, April 10
Sunset C

8:30 A.M. *C6.1
ION IMPLANTATION PROCESSING OF GALLIUM NITRIDE AND OTHER OPTOELECTRONIC COMPOUND SEMICONDUCTORS, J.S. Williams, RSPSE, ANU, Department of Electronic Materials Engineering, Canberra, Australia.

9:00 A.M. *C6.2
ION IMPLANTATION FOR HIGH PERFORMANCE III-V JFETS AND HFETS, J.C. Zolper, A.G. Baca, M.E. Sherwin and J.F. Klem, Sandia National Laboratories, Albuquerque, NM.

9:30 A.M. C6.3
GROUP II ACCEPTOR AND CARBON COIMPLANTATION IN GaAs, R. Morton, S.S. Lau, University of California-San Diego, Electrical Computer Engineering Department, La Jolla, CA; D.B. Poker, Oak Ridge National Laboratory, Oak Ridge, TN; and P.K. Chu, City University of Hong Kong, Department of Physics and Materials Science, Hong Kong.

9:45 A.M. C6.4
CHARACTERIZATION OF THE SOLID-PHASE EPITAXIAL GROWTH OF AMORPHIZED GaAs WITH IN-SITU ELECTRON MICROSCOPY, K. Belay, The Australian National University, Department of Electronic Materials Engineering, Research School of Physical Science and Engineering, Canberra, Australia; D.J. Llewellyn, The Australian National University, Department of Electronic Materials Engineering, Research School of Physical Science and Engineering and The Australian National University, Electron Microscopy Unit, Canberra, Australia; and M.C. Ridgway, The Australian National University, Department of Electronic Materials Engineering, Research School of Physical Science and Engineering, Canberra, Australia.

10:00 A.M. BREAK

10:30 A.M. *C6.5
GaAs DEVICES - THE GAP BETWEEN SCIENCE AND TECHNOLOGY, Wes Mckanin, TriQuint Semiconductor, Beaverton, OR.

11:00 A.M. *C6.6
COMPLEMENTARY HFET TECHNOLOGY FOR LOW-POWER MIXED-MODE APPLICATIONS, A.G. Baca, M.E. Sherwin, J.C. Zolper, D.F. Dubbert, V.M. Hictala, R.J. Shul, P.J. Robertson and M.J. Hafich, Sandia National Laboratories, Albuquerque, NM.

11:30 A.M. *C6.7
FABRICATION OF ADVANCED HETEROSTRUCTURE FIELD EFFECT TRANSISTORS IN III-V COMPOUND SEMICONDUCTORS, I. Adesida and R. Grundbacher, University of Illinois, Center for Compound Semiconductor Microelectronics and Department of Electrical and Computer Engineering, Urbana-Champaign, IL.

SESSION C7: PHOTONICS AND RELATED PROCESSING
Chairs: A.G. Baca and I. Adesida
Wednesday Afternoon, April 10
Sunset C

1:30 P.M. *C7.1
ADVANTAGES IN HIGH POWER SEMICONDUCTOR LASER, David F. Welch, SDL Incorporated, San Jose, CA.

2:00 P.M. *C7.2
FABRICATION OF INP-BASED OPTOELECTROPNIC DEVICES FOR FIBER COMMUNICATION SYSTEMS, F.R. Shepherd, Bell-Northern Research, Ottawa, Canada.

2:30 P.M. *C7.3
DRY ETCHING PROCESSING OF COMPOUND SEMICONDUCTORS UTILIZING INDUCTIVELY COUPLED PLASMAS, C. Constantine, Plasma-Therm IP, St. Petersburg, Russia.

3:00 P.M. BREAK

3:30 P.M. C7.4
DAMAGE INTRODUCTION IN InGaP BY ELECTRON CYCLOTRON RESONANCE Ar PLASMAS, J.W. Lee, S.J. Pearton, C.R. Abernathy, University of Florida, Gainesville, FL; W.S. Hobson and F. Ren, AT&T Bell Laboratories, Murray Hill, NJ.

3:45 P.M. C7.5
ECR ETCHING OF GaP, GaAs, InP, and InGaAs in Cl2/Ar, Cl2N2, BCl3/Ar, and BCl3/N2, R.J. Shul, A.G. Baca, D.J. Rieger, Sandia National Laboratories, Albuquerque, NM; S.J. Pearton, University of Florida, Department of Materials Science and Engineering, Gainesville, FL; P.A. Barnes, Auburn University, Auburn, AL; and F. Ren, AT&T Bell Laboratories, Murray Hill, NJ.

4:00 P.M. C7.6
ELECTRON CYCLOTRON RESONANCES ETCHING OF SiC IN NF3/O2 AND SF6/O2 PLASMAS, F. Ren, AT&T Bell Laboratory, Murray Hill, NJ; J.M. Grow, M. Bhaskaran, New Jersey Institute of Technology, Newark, NJ; S.J. Pearton, University of Florida, Gainesville, FL; M.W. Cole, Army Research Laboratory, Fort Monmouth, NJ; J. Flemish and J.R. Lotbian, AT&T Bell Laboratory, Murray Hill, NJ.

4:15 P.M. C7.7
W, WSix AND Ti/Al LOW RESISTANCE OHMIC CONTACTS TO InGaN, InAlN AND InN, C.B. Vartuli, S.J. Pearton, C.R. Abernathy, J.D. MacKenzie, University of Florida, Department of Materials Science and Engineering, Gainesville, FL; R.J. Shul, M.I. Lovejoy, J.C. Zolper, A.G. Baca, M.H. Crawford and S.P. Kilcoyne, Sandia National Laboratories, Albuquerque, NM.

4:30 P.M. C7.8
TRANSPORT PROPERTIES OF GaN, In GaN, AND InN, W.J.M.A. Geerts, J.D. MacKenzie, S.J. Pearton, C.R. Abernathy, University of Florida-NHMFL, Gainesville, FL; and T. Schmiedel, National High Magnetic Field Laboratory, Tallahassee, FL.

4:45 P.M. C7.9
INTERACTIONS AT METAL/InP INTERFACES FORMED AT 300K AND 77K, Wayne Anderson, Joseph Palmer, State University of New York at Buffalo, Department of Electrical and Computer Engineering, Amherst, NY; and D.T. Hoelzer, New York State College of Ceramics, Alfred University, Alfred, NY.
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Elsevier Science, Inc.
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IOP Publishing, Inc.
Kluwer Academic Publishers
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See page 6 for a complete list of exhibitors.
SYMPOSIUM C


COMPOUND SEMICONDUCTOR ELECTRONICS
AND PHOTONICS

April 8 - 10, 1996

Click Here for Proceedings Information

Chairs

Randy J. Shul Fan Ren
Sandia National Laboratories AT&T Bell Laboratories

Stephen J. Pearton Chan-Shin Wu
University of Florida Hughes Aircraft Company

Symposium Support

Sandia National Laboratories
AT&T Bell Laboratories
Hughes Aircraft Company
Plasma Therm I.P.

*Invited Paper

SESSION C1: GROWTH AND CHARACTERIZATION
Chairs: R.J. Shul and C.R. Abernathy
Monday Morning, April 8
Sunset C

8:30 A.M. *C1.1
GAS-SOURCE MOLECULAR BEAM EPITAXY OF ELECTRONIC DEVICES, E.A. Beam III, Texas Instruments, Department of Materials Science Laboratory, Dallas, TX; A.C. Seabaugh, H.F Chau, W. Liu and T.P.E. Broekaert, Texas Instruments, Inc., Department of Systems Components Laboratory, Dallas, TX.

9:00 A.M. C1.2
SELECTIVE-AREA EPITAXY AND IN-SITU ETCHING OF III-V COMPOUNDS BY CHEMICAL BEAM EPITAXY, Nein-Yi Li and Charles W. Tu, University of California San Diego, Department of Electrical and Computer Engineering, La Jolla, CA.

9:15 A.M. C1.3
INTRINSIC N-TYPE MODULATION DOPING IN InP-BASED HETEROSTRUCTURES, W.M. Chen, I.A. Buyanova, A. Buyanov, Linköping University, Department of Physics, Linköping, Sweden; W.G. Bi and C.W. Tu, University of California, Department of Electrical and Computer Engineering, LaJolla, CA.

9:30 A.M. C1.4
GROWTH AND CHARACTERIZATION OF SILICON DELTA-DOPED GaInP GROWN BY LOW-PRESSURE METALORGANIC CHEMICAL VAPOR DEPOSITION, Chien-Jen Wang, National Chiao-Tung University, Institute of Electronics and National Nano Device Laboratory, Hsinchu, Taiwan; Shih-Hsiung Chang, National Nano Device Laboratory, Hsinchu, Taiwan; Ming-Shiann Feng, National Chio-Tung University, Institute of Material Science and Engineering and National Nano Device Laboratory, Hsinchu, Taiwan; Chun-Yen Chang, Simon Min Sze and Wen-Chung Tsai, National Chiao-Tung University, Institute of Electronics and National Nano Device Laboratory, Hsinchu, Taiwan.

9:45 A.M. C1.5
OXYGEN-RELATED DEFECTS IN HIGH PURITY MOVPE AlGaAs, J.M. Ryan, J.W. Huang, T.F. Kuech and K.L. Bray, University of Wisconsin-Madison, Chemical Engineering Department, Madison, WI.

10:00 A.M. BREAK

10:30 A.M. C1.6
HYDROGEN EFFECTS ON MATERIAL CHARACTERISTICS OF CARBON-DOPED GaAs, W.Y. Han, M.W. Cole, K.A. Jones, S.N. Schauer, R.P. Mocrkirk, Army Research Laboratory, Fort Monmouth, NJ; Y. Lu, Rutgers University, Department of Electrical and Computer Engineering, Piscataway, NJ; and L.W. Yang, Ford Microelectronics, Inc., Colorado Spring, CO and Martin Marietta Electronics Laboratory, Syracuse, NY.

10:45 A.M. C1.7
THE GROWTH OF N- AND P-TYPE Al(As)Sb BY METAL-ORGANIC CHEMICAL VAPOR DEPOSITION, R.M. Biefeld, A.A. Allerman and M.W. Pelczynski, Sandia National Laboratories, Albuquerque, NM.

11:00 A.M. C1.8
A PSEUDOMORPHIC InAsSb MULTIPLE QUANTUM WELL INJECTION LASER EMITTING AT 3.5 um, A.A. Allerman. R.M. Biefeld, S.R. Kurtz and M.W. Pelczynski, Sandia National Laboratories, Albuquerque, NM.

11:15 A.M. C1.9
CHARACTERISATION OF InAs/AlSb/GaSb HETEROSTRUCTURES FOR IR OPTOELECTRONICS, J. Wagner, J. Schmitz, F. Fuchs, U. Weimar, N. Herres and P. Koidl, Fraunhofer-Institut für Angewandte Festkörperphysik, Freiburg, Germany.

11:30 A.M. C1.10
THEORETICAL STUDY OF InTlSb/InAsSb SUPERLATTICE FOR FAR INFRARED DETECTOR, Shanthi Iyer, North Carolina A&T State University, Department of Electrical Engineering, Greensboro, NC; K.K. Bajaj, Emory University, Physics Department, Atlanta, GA; Shahnaz Chowdhury-Nagle and Jie Li, North Carolina A&T State University, Department of Electrical Engineering, Greensboro, NC.

11:45 A.M. C1.11
HIGH QUALITY In(Ga)AsP/InP COMPRESSIVE STRAINED QUANTUM WELL STRUCTURES GROWN BY LP-MOCVD, J.T. Zhu, A.R. Clawson and P.K.L. Yu, University of California at San Diego, ECE Department, LaJolla, CA.

SESSION C2: VCSELs AND PASSIVATION
Chairs: R. Shepherd and E.A. Beam
Monday Afternoon, April 8
Sunset C

1:30 P.M. *C2.1
EPITAXIAL DESIGN AND GROWTH CONSIDERATIONS FOR VERTICAL-CAVITY LASERS, R.P. Schneider Jr., S.W. Corzine, M.R. Tan, Y.M. Houng and S.G. Hummel, Hewlett Packard Laboratories, Palo Alto, CA; M. Hagerott Crawford, K.D. Choquette and K.P. Killeen, Sandia National Laboratories, Albuquerque, NM.

2:00 P.M. *C2.2
SELECTIVE OXIDATION OF BURIED AlGaAs FOR FABRICATION OF VERTICAL CAVITY LASERS, Kent D. Choquette, Kent M. Geib, Photonics Research Department, Sandia National Laboratories, Albuquerque, NM; Herman C. Chui, Hong Hou, Semiconductor Materials Department, Sandia National Laboratories, Albuquerque, NM; and Robert Hull, University of Virginia, Materials Science Department, Charlottesville, VA.

2:30 P.M. *C2.3
LONG-WAVELENGTH VERTICAL-CAVITY SURFACE-EMITTING LASER DIODES, Vijay Jayaraman, Optical Concepts, Lompoc, CA.

3:00 P.M. BREAK

3:30 P.M. C2.4
STABILIZATION OF TRANSVERSE MODE EMISSION IN VERTICAL-CAVITY SURFACE-EMITTING LASERS BY DEPOSITION OF HIGH REFRACTIVE INDEX AMORPHOUS GaAs, H.-H. Park, B.-S. Yoo, H.Y. Chu and E.H. Lee, ETRI, Teajon, Korea; M.S. Park, B.T. Ahn, J.-H. Shin and Y.H. Lee, KAIST, Taejon, Korea.

3:45 P.M. *C2.5
LOW INTERFACE STATE DENSITY OXIDE-GaAs STRUCTURES FABRICATED BY IN-SITU MOLECULAR-BEAM EPITAXY, M. Passlack, Phoenix Corporate Research Laboratories, Tempe, AZ; and M. Hong, AT&T Bell Laboratories, Murray Hill, NJ.

4:15 P.M. C2.6
SURFACE PASSIVATION OF GaAs-BASED PHEMT BY HYDROGEN ION IRRADIATION, Song Stone Shi, Ying-lan Chang, Evelyn L. Hu, University of California, Center for Quantized Electronic Structures, Santa Barbara, CA; and Julia J. Brown, Hughes Research Laboratories, Malibu, CA.

4:30 P.M. C2.7
ORIENTATION DEPENDENCE FOR SURFACE PASSIVATION OF GaAs, I.P. Koutzarov, C. Edirisinghe, L.Z. Jedral, H.F. Ruda, Q. Liu, J. Guo-Ping, University of Toronto, Electronics Materials Group, Department of Metallurgy and Materials Science, Ontario, Canada; H. Xia, W.N. Leonard and L. Rodriquez-Fernandez, University of Western Ontario, Interface Science Western, Ontario, Canada.

4:45 P.M. C2.8
SURFACE STABILIZATION OF InP USING CdS THIN FILMS, A. Davis, H.M. Dauplaise, K. Vaccaro, B.G. Demczyk and J.P. Lorenzo, Rome Laboratory, RL/EROC, Hanscom Air Force Base, MA.

SESSION C3: RELIABILITY, STRAIN AND NANOSTRUCTURES
Chair: J.C.Zolper and J.R. Flemish
Tuesday Morning, April 9
Sunset C

8:30 A.M. *C3.1
A DEFECT MAP FOR DEGRADATION OF InGaAsP/InP LONG WAVELENGTH LASER DIODES, S.N.G. Chu, AT&T Bell Laboratories, Murray Hill, NJ; and S. Nakahara, Solid State Technology Center, AT&T Bell Laboratories, Breinigsville, PA.

9:00 A.M. *C3.2
THE EFFECTS OF BASE DOPANT OUTDIFFUSION ON LOW FREQUENCY NOISE CHARACTERISTICS OF AlGaAs/GaAs HETEROJUNCTION BIPOLAR TRANSISTORS, Y.C. Chou and G.P. Li, University of California, Department of Electrical and Computer Engineering, Irvine, CA.

9:30 A.M. *C3.3
GAIN PROPERTIES OF SiGe/Si STRAINED-LAYER SUPERLATTICE AVALANCHE PHOTODIODE, Feng-yi Huang, Xuegen Zhu and Kang L. Wang, University of California, Department of Electrical Engineering, Los Angeles, CA.

10:00 A.M. BREAK

10:30 A.M. C3.4
FINITE ELEMENT CALCULATIONS TO OPTIMIZE THE DESIGN OF A STRESSOR FOR HIGH PERFORMANCE STRAINED INDUCED QUANTUM WIRES AND QUANTUM DOTS IN GaAs, S.C. Jain, K. Pinardi and H.E. Maes, IMEC, Leuven, Belgium.

10:45 A.M. *C3.5
BAND-STRUCTURE ENGINEERING IN NOVEL OPTOELECTRONIC DEVICES, H. Shen and M. Dutta, United States Army Research Laboratory, Physical Science Directorate, Fort Monmouth, NJ.

11:15 A.M. C3.6
TEM STRUCTURAL CHARACTERIZATION OF NM-SCALE ISLANDS IN HIGHLY MISMATCHED SYSTEMS, S. Ruvimov, Lawrence Berkeley National Laboratory, Berkeley, CA; N.N. Ledentsov, V.M. Ustinov, P.S. Kop'ev, Ioffe Institute, St. Petersburg, Russia; D. Bimberg, Technical University of Berlin, Berlin, Germany; P. Werner, K. Scheerschmidt, Max-Planck-Institute of Microstructure Physics, Halle, Germany; Z. Liliental-Weber, Lawrence Berkeley Laboratory, Berkeley, CA; and Zh.I. Alferov, Ioffe Institute, St. Petersburg, Russia.

11:30 A.M. C3.7
SYNTHESIS OF GALLIUM ARSENIDE NON-PARTICLES BY DIGITAL RF-SPUTTERING, Makoto Hirasawa, Hiroshi Komiyama and Yasuyiki Egashira, University of Tokyo, Department of Chemical System Engineering, Tokyo, Japan.

11:45 A.M. C3.8
LEAD SULPHIDE QUANTUM PARTICLES WITH ABSORPTION BAND ONSET IN THE NEAR INFRA RED, Jerome C. Bhat, Tharmalingam Krishnakumar, University of Oxford, Department of Engineering Science, Oxford, United Kingdom; Rekha R. Nayak, Oleg V. Salata, John L. Hutchison, University of Oxford, Department of Materials, Oxford, United Kingdom; and Peter J. Dobson, University of Oxford, Department of Engineering Science, Oxford, United Kingdom.

SESSION C4: PROCESSING AND PROPERTIES OF III-V'S
Chairs: R.J. Shul and S.J. Pearton
Tuesday Afternoon, April 9
Sunset C

1:30 P.M. *C4.1
PLASMA ETCHING OF SILICON CARBIDE FOR DEVICE FABRICATION, J.R. Flemish, K. Xie and G.F. McLane, Physical Sciences Directorate, Army Research Laboratory, Fort Monmouth, NJ.

2:00 P.M. C4.2
CLEAVED FACETS IN GaN BY WAFER FUSION OF GaN TO InP, R.K. Sink, University of California, Santa Barbara, Department of Electrical and Computer Engineering, Santa Barbara, CA; S. Keller, B.P. Keller, University of California, Santa Barbara, Materials Department, Santa Barbara, CA; A. Holmes, University of California, Santa Barbara, Department of Electrical and Computer Engineering, Santa Barbara, CA; D. Kapolnek, X. Wu, University of California, Santa Barbara, Materials Department, Santa Barbara, CA; D. I. Babic, J.E. Bowers, University of California, Santa Barbara, Department of Electrical and Computer Engineering, Santa Barbara, CA; S. DenBaars and J.S. Speck, University of California, Santa Barbara, Materials Department, Santa Barbara, CA.

2:15 P.M. *C4.3
STRAIN EFFECTS ON OPTICAL GAIN PROPERTY OF GaN/AlGaN QUANTUM WELL LASERS, Masakatsu Suzuki and Takeshi Uenoyama, Matsushita Electric Industrial Co., Central Research Laboratories, Kyoto, Japan.

2:45 P.M. C4.4
ABSOLUTE INTERNAL QUANTUM EFFICIENCY OF AN InGaN/GaN QUANTUM WELL, Eli Yablonovitch, Charles P. Reese, UCLA, Department of Electrical Engineering, Los Angeles, CA; Steven P. DenBaars, Stacia Keller and B. Keller, University of California, Santa Barbara, Materials Department, Santa Barbara, CA.

3:00 P.M. BREAK

3:30 P.M. C4.5
STUDIES OF DEGRADATION IN NICHIA AlGaN/InGaN/GaN BLUE LIGHT EMITTING DIODES UNDER CLOSE TO NORMAL OPERATING CONDITIONS, Marck Osinski, Piotr Perlin, University of New Mexico, Albuquerque, NM; Philippe Satori, Nationale Supérieure des Télécommunications, Paris, France; B. Scott Phillips, University of New Mexico, Albuquerque, NM; Daniel L. Barton, Christopher J. Helms and Niel Berg, Sandia National Laboratories, Albuquerque, NM.

3:45 P.M. C4.6
GATE FORMATION FOR HIGH TEMPERATURE GaN FIELD EFFECT TRANSISTORS, I. Adesida, A.C. Schmitz, A.T. Ping, University of Illinois, Center for Compound Semiconductor Microelectronics, Urbana-Champaign, IL; and M.A. Khan, APA Optics Inc., Blaine, MN.

4:00 P.M. C4.7
PHOTOLUMINESCENCE STUDY OF CHLORIDE VPE-GROWN GaN, T. Ueda, M. Yuri, H. Lee, J.S. Harris Jr., Stanford University, Department of Electrical Engineering, Stanford, CA; and T. Baba, Matsushita Electronics Corporation, Electronics Research Laboratory, Palo Alto, CA.

4:15 P.M. C4.8
VAPOR PHASE EPITAXY OF GaN USING GALLIUM TRI-CHLORIDE AND AMMONIA, M. Yuri, T. Ueda, H. Lee, Stanford University, Department of Electrical Engineering, Stanford, CA; K. Itoh, T. Baba, Matsushita Electronics Corporation, Electronics Research Laboratory, Osaka, Japan; J.S. Harris Jr., Stanford University, Department of Electrical Engineering, Stanford, CA.

4:30 P.M. C4.9
SYNTHESIS AND CHARACTERIZATION OF GAN QUANTUM DOTS, Ravindra S. Kane, Robert E. Cohen, Massachusetts Institute of Technology, Department of Chemical Engineering, Cambridge, MA; and Robert Silbey, Massachusetts Institute of Technology, Chemistry Department, Cambridge, MA.

4:45 P.M. C4.10
INVESTIGATION OF GaSb/InAs TYPE II SUPERLATTICES FOR INFARED PHOTODETECTORS, D.K. Sengupta, W. Wohlmuth, H.C. Kuo, K.Y. Cheng, I. Adesida, M. Feng and G.E. Stillman, University of Illinois, Department of Electrical and Computer Engineering, Urbana, IL.

SESSION C5: POSTER SESSION
GROWTH AND PROCESSING POSTER SESSION
Chairs: S.J. Pearton and C.S. Wu
Tuesday Evening, April 9
8:00 P.M.
Presidio Ballroom

C5.1 INVESTIGATION OF DEEP-LEVEL DEFECTS IN 10 MeV ELECTRONS IRRADIATED SI-GaAs, Wu Fengmei, Li Haifeng, Nanjing University, Department of Physics, Nanjing, China; and Zhao Zhouying, Nanjing Electronic Devices Institute, Nangjing, China.

C5.2 A STUDY OF ANNEALING BEHAVIOR OF EL2 AND EL6 GROUPS IN SI-GaAs, Fengmei Wu, Nanjing University, Department of Physics, Nanjing, China; and Zhouying Zhao, Nanjing Electronic Devices Institute, Nanjing, China.

C5.3 THE ELECTRIC FIELD MEASURING BY PHASE SELECTIVE PHOTOREFLECTANCE, Jenn-Shyong Hwang, Shing-Long Tyan, Yau-Chyr Wang and Paul H. Shen, National Cheng Kung University, Department of Physics, Tainan, Taiwan.

C5.4 GROWTH AND CHARACTERIZATION OF GaAs EPITAXIAL LAYERS BY MOCVD, Saluru B. Krupanidhi, Indian Institute of Science, Materials Research Centre, Bangalore, India; and Mantu K. Hudait, Bharat Electronics, Central Research Laboratories, Bangalore, India.

C5.5 FORMATION OF NEW SEMICONDUCTING Ge-Si-Fe ALLOY ON Si(100) AND ITS OPTICAL PROPERTIES, Hao Chen, Ping Han, Xiaodong Huang, Liqun Hu, Yi Shi and Youdou Zheng, Nanjing University, Physics Department, Jiangsu, China.

C5.6 THEMOPHYSICAL AND THERMODYNAMIC PROPERTIES OF Hg1-xZnxTe PSEUDOBINARY MELTS, Ching-Hua Su, Yi-Gao Sha, K. Mazuruk and S.L. Lehoczky, Space Science Laboratory, NASA Marshall Space Flight Center, Huntsville, AL.

C5.7 A STUDY OF LOW-TEMPERATURE GROWN GAP BY GAS-SOURCE MOLECULAR BEAM EPITAXY, W.G. Bi, X.B. Mei, K.L. Kavanagh and C.W. Tu, University of California, Department of Electrical and Computer Engineering, San Diego, CA.

C5.8 ATOMIC FORCE MICROSCOPE CHEMICALLY INDUCED DIRECT PROCESSING OF GaAs AND NiAl, Barden N. Shimbo, James S. Harris, Yoshitaka Okada, Serguei Komarov and Bartev J. Vartanian, Stanford University, Department of Electrical Engineering, Stanford, CA.

C5.9 Cl2-BASED FOR ECR ETCHING OF InGaP, AlInP AND AlGaP, J. Hong, J.W. Lee, S.J. Pearton, C. Santana, C.R. Abernathy, University of Florida, Gainesville, FL; W.S. Hobson and F. Ren, AT&T Bell Laboratories, Murray Hill, NJ.

C5.10 OPTICAL PROPERTIES AND ELECTRONIC STRUCTURE OF INDIUM NITRIDE THIN FILMS, V. Ya. Malakhov, National Academy of Materials Science, Institute for Problems of Materials Science, Kiev, Ukraine.

C5.11 GROWTH OF EPITAXIAL GaN FILM USING ZNO BUFFER LAYER BY PULSED LASER DEPOSITION, T.F. Huang and J.S. Harris, Stanford University, Solid State Laboratory, Stanford, CA.

C5.12 PLASMA CHEMISTRIES FOR DRY ETCHING GaN, InGaN AND InAiN, S.J. Pearton, University of Florida, Gainesville, FL; R.J. Shul, Sandia National Laboratories, Albuquerque, NM; G.F. McLane, Army Research Laboratory, Ft. Monmouth, NJ; and F. Ren, AT&T Bell Laboratories, Murray Hill, NJ.

C5.13 DRY ETCHING OF InGaP AND AlInP IN CH4/H2/Ar, J.W. Lee, S.J. Pearton, C.J. Santana, E.S. Lambers, C.R. Abernathy, University of Florida, Gainesville, FL; W.S. Hobson and F. Ren, AT&T Bell Laboratories, Murray Hill, NJ.

C5.14 PASSIVATION OF CARBON DOPING IN InGaAs DURING ECR-CVD OF SiNx, F. Ren, R.A. Hamm, AT&T Bell Laboratories, Murray Hill, NJ; R.G. Wilson, Hughes Research Laboratories, Malibu, CA; S.J. Pearton, University of Florida, Gainesville, FL; and J.R. Lothian, AT&T Bell Laboratories, Murray Hill, NJ.

C5.15 (Er,Zn)-DOPED GaSb PLANAR PHOTODIODES GROWN BY LIQUID-PHASE EPITAXY, Meng-Chyi Wu, Yuh-Maoh and Jyh-Ming Wang, National Tsing Hua University, Research Institute of Electrical Engineering, Hsinchu, Taiwan.

C5.16 MOVPE OF INP AND GaAs BASED OPTOELECTRONIC MATERIALS IN A MULTIWAFER PRODUCTION REACTORS USING TBA AND TBP EXCLUSIVELY, D. Schmitz, G. Lengeling, R. Beccard and H. Juergensen, AIXTRON GmbH, Aachen, Germany.

C5.17 MOLECULAR BEAM EPITAXIAL GROWTH AND PROPERTIES OF HgCdTe VERY LONG WAVE INFRARED DETECTORS, Rajesh D. Rajavel, Hughes Research Laboratory, Malibu, CA.

C5.18 POLARIZATION CONTROL OF VERTICAL-CAVITY SURFACE-EMITTING LASERS BY TILTED-ETCHING OF CAVITY, H.Y. Chu, B.-S. Yoo, M.S. Park and H.-H. Park, ETRI, Basic Research Department, Taejon, Korea.

C5.19 PROPERTIES OF H, O AND C IN GaN, S.J. Pearton, C.R. Abernathy, J.W. Lee, C.B. Vartuli, J.D. MacKenzie, University of Florida, Gainesville, FL; F. Ren, AT&T Bell Laboratories, Murray Hill, NJ; R.G. Wilson, Hughes Research Laboratories, Malibu, CA; J.M. Zavada, US Army Research Laboratory, Research Triangle Park, NC; R.J. Shul and J.C. Zolper, Sandia National Laboratories, Albuquerque, NM.

C5.20 LONG WAVELENGTH SHIFTING AND BROADENING OF QUANTUM WELL INFRARED PHOTODETECTOR RESPONSE VIA RAPID THERMAL ANNEALING, D.K. Sengupta, W.C. Fang, T. Horton, H.C. Kuo, J.I. Malin, N.F. Gardner, B. Flachsbart, S.L. Chuang, K.C. Hsieh, K.Y. Cheng, I. Adesida, M. Fend and G.E. Stillman, Center for Compound Semiconductor Microelectronics, Urbana, IL.

C5.21 ANALYSIS OF RADIATIVE RECOMBINATION AND OPTICAL GAIN IN GALLIUM NITRIDE-BASED HETEROSTRUCTURES, Petr G. Eliseev, Lebedev Physics Institute, Moscow, Russia; Vladimir G. Smagley and Marek Osinski, University of New Mexico, Albuquerque, NM.

SESSION C6: IMPLANTATION AND DEVICES
Chairs: F. Ren and K.D. Choquette
Wednesday Morning, April 10
Sunset C

8:30 A.M. *C6.1
ION IMPLANTATION PROCESSING OF GALLIUM NITRIDE AND OTHER OPTOELECTRONIC COMPOUND SEMICONDUCTORS, J.S. Williams, RSPSE, ANU, Department of Electronic Materials Engineering, Canberra, Australia.

9:00 A.M. *C6.2
ION IMPLANTATION FOR HIGH PERFORMANCE III-V JFETS AND HFETS, J.C. Zolper, A.G. Baca, M.E. Sherwin and J.F. Klem, Sandia National Laboratories, Albuquerque, NM.

9:30 A.M. C6.3
GROUP II ACCEPTOR AND CARBON COIMPLANTATION IN GaAs, R. Morton, S.S. Lau, University of California-San Diego, Electrical Computer Engineering Department, La Jolla, CA; D.B. Poker, Oak Ridge National Laboratory, Oak Ridge, TN; and P.K. Chu, City University of Hong Kong, Department of Physics and Materials Science, Hong Kong.

9:45 A.M. C6.4
CHARACTERIZATION OF THE SOLID-PHASE EPITAXIAL GROWTH OF AMORPHIZED GaAs WITH IN-SITU ELECTRON MICROSCOPY, K. Belay, The Australian National University, Department of Electronic Materials Engineering, Research School of Physical Science and Engineering, Canberra, Australia; D.J. Llewellyn, The Australian National University, Department of Electronic Materials Engineering, Research School of Physical Science and Engineering and The Australian National University, Electron Microscopy Unit, Canberra, Australia; and M.C. Ridgway, The Australian National University, Department of Electronic Materials Engineering, Research School of Physical Science and Engineering, Canberra, Australia.

10:00 A.M. BREAK

10:30 A.M. *C6.5
GaAs DEVICES - THE GAP BETWEEN SCIENCE AND TECHNOLOGY, Wes Mckanin, TriQuint Semiconductor, Beaverton, OR.

11:00 A.M. *C6.6
COMPLEMENTARY HFET TECHNOLOGY FOR LOW-POWER MIXED-MODE APPLICATIONS, A.G. Baca, M.E. Sherwin, J.C. Zolper, D.F. Dubbert, V.M. Hictala, R.J. Shul, P.J. Robertson and M.J. Hafich, Sandia National Laboratories, Albuquerque, NM.

11:30 A.M. *C6.7
FABRICATION OF ADVANCED HETEROSTRUCTURE FIELD EFFECT TRANSISTORS IN III-V COMPOUND SEMICONDUCTORS, I. Adesida and R. Grundbacher, University of Illinois, Center for Compound Semiconductor Microelectronics and Department of Electrical and Computer Engineering, Urbana-Champaign, IL.

SESSION C7: PHOTONICS AND RELATED PROCESSING
Chairs: A.G. Baca and I. Adesida
Wednesday Afternoon, April 10
Sunset C

1:30 P.M. *C7.1
ADVANTAGES IN HIGH POWER SEMICONDUCTOR LASER, David F. Welch, SDL Incorporated, San Jose, CA.

2:00 P.M. *C7.2
FABRICATION OF INP-BASED OPTOELECTROPNIC DEVICES FOR FIBER COMMUNICATION SYSTEMS, F.R. Shepherd, Bell-Northern Research, Ottawa, Canada.

2:30 P.M. *C7.3
DRY ETCHING PROCESSING OF COMPOUND SEMICONDUCTORS UTILIZING INDUCTIVELY COUPLED PLASMAS, C. Constantine, Plasma-Therm IP, St. Petersburg, Russia.

3:00 P.M. BREAK

3:30 P.M. C7.4
DAMAGE INTRODUCTION IN InGaP BY ELECTRON CYCLOTRON RESONANCE Ar PLASMAS, J.W. Lee, S.J. Pearton, C.R. Abernathy, University of Florida, Gainesville, FL; W.S. Hobson and F. Ren, AT&T Bell Laboratories, Murray Hill, NJ.

3:45 P.M. C7.5
ECR ETCHING OF GaP, GaAs, InP, and InGaAs in Cl2/Ar, Cl2N2, BCl3/Ar, and BCl3/N2, R.J. Shul, A.G. Baca, D.J. Rieger, Sandia National Laboratories, Albuquerque, NM; S.J. Pearton, University of Florida, Department of Materials Science and Engineering, Gainesville, FL; P.A. Barnes, Auburn University, Auburn, AL; and F. Ren, AT&T Bell Laboratories, Murray Hill, NJ.

4:00 P.M. C7.6
ELECTRON CYCLOTRON RESONANCES ETCHING OF SiC IN NF3/O2 AND SF6/O2 PLASMAS, F. Ren, AT&T Bell Laboratory, Murray Hill, NJ; J.M. Grow, M. Bhaskaran, New Jersey Institute of Technology, Newark, NJ; S.J. Pearton, University of Florida, Gainesville, FL; M.W. Cole, Army Research Laboratory, Fort Monmouth, NJ; J. Flemish and J.R. Lotbian, AT&T Bell Laboratory, Murray Hill, NJ.

4:15 P.M. C7.7
W, WSix AND Ti/Al LOW RESISTANCE OHMIC CONTACTS TO InGaN, InAlN AND InN, C.B. Vartuli, S.J. Pearton, C.R. Abernathy, J.D. MacKenzie, University of Florida, Department of Materials Science and Engineering, Gainesville, FL; R.J. Shul, M.I. Lovejoy, J.C. Zolper, A.G. Baca, M.H. Crawford and S.P. Kilcoyne, Sandia National Laboratories, Albuquerque, NM.

4:30 P.M. C7.8
TRANSPORT PROPERTIES OF GaN, In GaN, AND InN, W.J.M.A. Geerts, J.D. MacKenzie, S.J. Pearton, C.R. Abernathy, University of Florida-NHMFL, Gainesville, FL; and T. Schmiedel, National High Magnetic Field Laboratory, Tallahassee, FL.

4:45 P.M. C7.9
INTERACTIONS AT METAL/InP INTERFACES FORMED AT 300K AND 77K, Wayne Anderson, Joseph Palmer, State University of New York at Buffalo, Department of Electrical and Computer Engineering, Amherst, NY; and D.T. Hoelzer, New York State College of Ceramics, Alfred University, Alfred, NY.
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Academic Press
American Institute of Physics
ASTeX/Applied Science & Technology, Inc.
Bede Scientific
Cabot Corporation
Elsevier Science, Inc.
FEI Company
Goodfellow Corporation
Intelligent Sensor Technology, Inc.
IOP Publishing, Inc.
Kluwer Academic Publishers
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Philips Semiconductors/Materials Analysis Group
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Research & PVD Materials Corp.
Staib Instruments, Inc.
Thermionics Laboratory, Inc.
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See page 6 for a complete list of exhibitors.