Meetings & Events

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1996 MRS Spring Meeting & Exhibit

April 8-12, 1996 | San Francisco
Meeting Chairs
: Thomas F. Kuech, Clifford L. Renschler, Chuang Chuang Tsai



Symposium D: Rare Earth Doped Semiconductors II

Chairs

Albert Polman
FOM-Institute AMOLF

Salvo Coffa
CNR-IMETEM

Robert N. Schwartz
Hughes Research Laboratories

Symposium Support

High Voltage Engineering Europa BV
Italian National Research Counsel (CNR)
SGS-Thomson
Army Research Office (ARO)

*Invited Paper

SESSION D1: GROWTH MECHANISMS AND PROPERTIES I
Chair: Robert N. Schwartz
Monday Morning, April 8
Sunset B

8:30 A.M. Welcome, Opening Remarks

8:45 A.M. *D1.1
Er-DOPING OF GaN AND RELATED ALLOYS, S.J. Pearton, C.R. Abernathy, J.D. MacKenzie, University of Florida, Gainesville, FL; R.N. Schwartz, R.G. Wilson, Hughes Research Laboratories, Malibu, CA; J.M. Zavada, United States Army Research Laboratory, RTP, NC; and R.J. Shul, Sandia National Laboratories, Albuquerque, NM.

9:15 A.M. D1.2
PROPERTIES OF UHV-CVD GROWN AND ION IMPLANTED Si:Er, M. Morse, B. Zheng, J. Palm, X. Duan, L.C. Kimerling, Massachusetts Institute of Technology, Department of Materials Science and Engineering, Cambridge, MA.

9:30 A.M. D1.3
PROPERTIES AND GROWTH OF MBE GROWN ERBIUM DOPED GALLIUM ARSENIDE CO-DOPED WITH SELENIUM, P. Rutter, K.E. Singer and A.R. Peaker, University of Manchester Institute of Science and Technology, Centre for Electronic Materials, Manchester, United Kingdom.

9:45 A.M. D1.4
GROWTH CONDITIONS OF ERBIUM-OXYGEN-DOPED SILICON GROWN BY MBE, J. Stimmer, A. Reittinger, G. Abstreiter, Walter Schottky Institut, Garching, Germany; H. Holzbrecher and Ch. Buchal, ZCH, Forschungszentrum, Jülich, Germany.

10:00 A.M. BREAK

SESSION D2: EXCITATION MECHANISMS I
Chair: Salvo Coffa

10:30 A.M. *D2.1
RARE-EARTH DOPED EPITAXIAL InGaP AND ITS OPTICAL PROPERTIES, Bruce W. Wessels, Northwestern University, Evanston, IL.

11:00 A.M. *D2.2
ENERGY TRANSFER PROCESSES IN OXYGEN-CODOPED GaAs:Er, K. Takahei, R. Hogg and A. Taguchi, NTT Basic Research Laboratories, Kanagawa, Japan.

11:30 A.M. D2.3
EXCITATION PROPERTIES OF Er-DOPED GaP AND GaAs FROM PHOTOLUMINESCENCE AND HIGH PRESSURE STUDIES, Thomas D. Culp, U. Hömmerich, J.M. Redwing, University of Wisconsin-Madison, Department of Chemical Engineering, Madison, WI; X.Z. Wang, Bruce W. Wessels, Northwestern University, Department of Materials Science and Engineering, Evanston, IL; T.F. Kuech and K.L. Bray, University of Wisconsin-Madison, Department of Chemical Engineering, Madison, WI.

11:45 A.M. D2.4
INCORPORATION, ACTIVATION, EXCITATION AND DE-EXCITATION OF ERBIUM IN SILICON, A. Polman, Jung H. Shin, F.W. Saris, P.G. Kik and G.N. van den Hoven, FOM Institute, AMOLF, Amsterdam, Netherlands.

SESSION D3: GROWTH MECHANISMS AND
PROPERTIES II: MBE
Chair: Albert Polman
Monday Afternoon, April 8
Sunset B

1:30 P.M. *D3.1
ION BEAM EPITAXY OF IN-SITU Er-O CO-DOPED SILICON FILMS, Morito Matsuoka and Shun-ichi Tohno, NTT Opto-electronics Laboratories, Ibaraki, Japan.

2:00 P.M. D3.2
SEGREGATION, TRAPPING AND OPTICAL ACTIVATION OF ERBIUM DURING SILICON MOLECULAR BEAM EPITAXY, R. Serna, Jung H. Shin, M. Lohmeier, E. Vlieg, A. Polman, FOM-Institute for Atomic and Molecular Physics, Amsterdam, Netherlands; and P.F.A. Alkemade, Delft University of Technology, DIMES/NF, Faculty of Applied Physics, Delft, Netherlands.

2:15 P.M. D3.3
Er-DOPING IN Si FILMS GROWN BY MOLECULAR BEAM EPITAXY FOR EFFICIENT 1.54 um LIGHT EMISSION, Wei-Xin Ni, K.B. Joelsson, G.V. Hansson, I.A. Buyanova, W.M. Chen, B. Monemar, Linköping University, Department of Physics, Linköping, Sweden; J. Candelas and B. Svensson, Royal Institute of Technology, Department of Solid-State Electronics, Stockholm, Sweden.

2:30 P.M. D3.4
SELF ORGANISED GROWTH IN THULIUM DOPED GaAs USING MBE, M.R. Bennett, K.E. Singer, UMIST, Centre for Electronic Materials, Manchester, United Kingdom; A.C. Wright, NEWI, Advanced Materials Laboratory, Deeside, United Kingdom; J.H. Evans, UMIST, Centre for Electronic Materials, Manchester, United Kingdom; and Z.H. Jafri, University of Surrey, Department of Electronic and Electrical Engineering, Surrey, United Kingdom.

2:45 P.M. BREAK

SESSION D4: GROWTH MECHANISMS AND PROPERTIES III
Chair: M. Morse

3:15 P.M. D4.1
NEODYMIUM AND ERBIUM IMPLANTED GaN, Eric Silkowski, Yung Kee Yeo, Robert L. Hengehold, Air Force Institute of Technology, WPAFB, OH; Barbara Goldenberg, Honeywell Technology Center, Bloomington, MN; and Gernot Pomrenke, ARPA/MTO, Arlington, VA.

3:30 P.M. D4.2
OPTICAL CENTERS RELATED TO LASER-DOPED ERBIUM IN SILICON, Kenshiro Nakashima, Osamu Eryu, Osamu Iioka, Hironori Oowaki, Nagoya Institute of Technology, Showa-ku, Nagoya, Japan; and Masanori Watanabe, Ion Engineering Research Institute Corporation, Hirakata, Osaka, Japan.

3:45 P.M. D4.3
PHOTOLUMINESCENCE OF ERBIUM-DIFFUSED SILICON, H. Horiguchi, R. Saito, T. Kimura, University of Electro-Communications, Department of Electronic Engineering, Tokyo, Japan; and T. Ikoma, TI Tsukuba Research and Development Center Ltd., Ibaraki, Japan.

4:00 P.M. D4.4
MOCVD ERBIUM SOURCES, Anton C. Greenwald, Kurt Linden, Spire Corporation, Bedford, MA; William S. Rees Jr. and Oliver Just, Georgia Institute of Technology, Department of Chemistry, Atlanta, GA.

4:15 P.M. D4.5
SECONDARY ION MASS SPECTROMETRY ANALYSES OF RARE-EARTH DOPED SEMICONDUCTORS, C.J. Hitzman, Charles Evans and Associates, Redwood City, CA; R.G. Wilson and R.N. Schwartz, Hughes Research Laboratories, Malibu, CA.

4:30 P.M. D4.6
ABOUT THE ELECTRICAL AND STRUCTURAL PROPERTIES OF ERBIUM THERMALLY DIFFUSED IN SINGLE CRYSTAL SILICON, S. Binetti, S. Pizzini, M. Acciarri and I. Gelmi, University of Milano, Department of Physical Chemistry, Milano, Italy.

SESSION D5: STRUCTURAL, ELECTRICAL AND
OPTICAL PROPERTIES I
Chair: J. Michel
Tuesday Morning, April 9
Sunset B

8:30 A.M. *D5.1
FACTORS GOVERNING THE PHOTOLUMINESCENCE YIELD OF Si:Er, W. Jantsch, Johannes-Kepler Universität, Linz, Austria; H. Przybylinska, Institute of Physics, PAS, Poland; C. Skierbiszewshi, Unipress,. Warsaw, Poland; and L. Palmetshofer, Johannes-Kepler Universität, Linz, Austria.

9:00 A.M. D5.2
THE EFFECTS OF IMPURITY CODOPING ON THE ELECTRICAL PROPERTIES OF RARE EARTH IONS IN CRYSTALLINE SILICON, S. Libertino, University of Catania, Dipartimento di Fisica, Catania, Italy; S. Coffa, CNR-IMETEM, Catania, Italy; F. Priolo and G. Franzò, University of Catania, Dipartimento di Fisica, Catania, Italy.

9:15 A.M. D5.3
LUMINESCENCE DECAY OF THE 1.54 um EMISSION FROM ERBIUM IN SILICON, J. Hartung, J.H. Evans, P. Dawson, A. Scholes, T. Taskin, Q. Huda, A.R. Peaker, Centre for Electronic Materials, Department of Electrical Engineering, UMIST, Manchester, United Kingdom; C. Jeynes, University of Surrey, Department of Electrical Engineering, Surrey, United Kingdom; and D.C. Houghton, National Research Council of Canada, Ottawa, Canada.

9:30 A.M. D5.4
STRESS AND ZEEMAN STUDY OF 1.5 um EMISSION IN Si:Er, Maria Carmo and Joaquim Leitão, University of Aveiro, Department of Physics, Aveiro, Portugal.

9:45 A.M. D5.5
DEFECT ENGINEERING IN Si:Er TECHNOLOGY, Nick A. Soboley, Oleg V. Alexandrov, Vadim V. Emtsev, Dmitrii S. Poloskin, Elena I. Shek, Ioffe Physico-Technical Institute, Department of Solid State Electronics, St. Petersburg, Russia.

10:00 A.M. BREAK

SESSION D6: EXCITATION MECHANISMS II
Chair: B.W. Wessels

10:30 A.M. *D6.1
EXCITATION AND DE-EXCITATION OF ERBIUM IMPLANTS IN SILICON; PHOTOLUMINESCENCE AND IMPACT IONIZATION STUDIES, T. Gregorkiewicz, I. Tsimperidis and C.A.J. Ammerlaan, Universiteit van Amsterdam, Van der Waals - Zeeman Instituut, Amsterdam, Netherlands.

11:00 A.M. D6.2
PHOTOLUMINESCENCE KINETICS OF RARE EARTH DOPED P-TYPE InP AND GaAs, H.J. Lozykowski, U.K. Saha, Ohio University, School of Electrical Engineering and Computer Science, Athens, OH.

11:15 A.M. D6.3
LUMINESCENCE QUENCHING IN ERBIUM-DOPED HYDROGENATED AMORPHOUS SILICON, Jung H. Shin, G.N. van den Hoven, R. Serna, A. Polman, FOM-Institute, AMOLF, Amsterdam, Netherlands; W.G.J.H.M. van Sark, A.M. Vredenberg, Debye Institute, Utrecht University, Utrecht, Netherlands; S. Lombardo and S.U. Campisano, CNR-IMETEM, Catania, Italy.

11:30 A.M. *D6.4
THE POSSIBLE MECHANISM OF EXCITATION OF THE f-f EMISSION IN CLUSTERS Er-O IN SILICON, V.F. Masterov and L.G. Gerchikov, St. Petersburg State Technical University, St. Petersburg, Russia.

SESSION D7: EXCITATION MECHANISMS III
Chair: F. Priolo
Tuesday Afternoon, April 9
Sunset B

1:30 P.M. *D7.1
ON THE EXCITATION MECHANISM OF Er AND Yb IN THE QUATERNARY COMPOUNDS InGaAsP, Peter Wellmann, Albrecht Winnacker, University of Erlangen, Institute for Material Science, Electronic Materials, Erlangen, Germany; and Gerhard Pensl, University of Erlangen, Institute of Applied Physics, Erlangen, Germany.

2:00 P.M. *D7.2
EXCITATION AND RECOMBINATION PROCESSES IN RARE EARTH DOPED II-VI SEMICONDUCTORS, M. Godlewski, Polish Academy of Sciences, Institute of Physics, Warsaw, Poland.

2:30 P.M. D7.3
PHOTO- AND ELECTROLUMINESCENCE STUDY OF EXCITATION MECHANISM OF Er LUMINESCENCE IN a-Si:H(Er), I.N. Yassievich, O.B. Gusev, Ioffe Physico-Technical Institute, St. Petersburg, Russia; W. Fuhs, Philipps- Universität, Marburg, Germany; A.N. Kuznetsov, E.I. Terukov and B.P. Zakhrchenya, Ioffe Physico-Technical Institute, St. Petersburg, Russia.

2:45 P.M. BREAK

SESSION D8: STRUCTURAL, ELECTRICAL
AND OPTICAL PROPERTIES II
Chair: W. Jantsch

3:15 P.M. D8.1
CHARACTERIZATION OF Er-DOPED III-NITRIDES PREPARED USING MOMBE, J.M. Zavada, U.S. Army Reserach Office, Electronics Division, Research Triangle Park, NC; R.G. Wilson, R.N. Schwartz, Hughes Research Laboratories, Malibu, CA; C.R. Abernathy, J.D. MacKenzie, S.J. Pearton, University of Florida, Gainesville, FL.

3:30 P.M. D8.2
THE 4f INTRASHELL TRANSITIONS OF InP:Yb, Ingrid de Maat-Gersdorf, T. Gregorkiewicz and C.A.J. Ammerlaan, University of Amsterdam, van der Waals-Zeeman Institute, Amsterdam, Netherlands.

3:45 P.M. D8.3
EXAFS AND X-RAY CTR SCATTERING CHARACTERIZATION OF Er ATOMS DOPED IN InP BY OMVPE, Yoshikazu Takeda, Daisuke Kawamura, Keiji Fujita, Naoki Matsubara, Naoki Yamada, Hironori Ofuchi, Satofumi Ichiki, Masao Tabuchi and Yasufumi Fujiwara, Nagoya University, Department of Materials Science and Engineering, Nagoya, Japan.

4:00 P.M. D8.4
OPTICAL ANISOTROPY OF Er CENTERS IN GaAs:Er,O, R.A. Hogg, K. Takahei, A. Taguchi, NTT Basic Research Laboratories, Kanagawa, Japan.

4:15 P.M. D8.5
ANNEALING STUDY OF ERBIUM AND OXYGEN IMPLANTED GALLIUM NITRIDE, John T. Torvik, Robert J. Feuerstein, Jacques I. Pankove, University of Colorado at Boulder, Department of Electrical Engineering, Boulder, CO; and Fereydoon Namavar, Spire Corporation, Bedford, MA.

4:30 P.M. D8.6
RUTHERFORD BACKSCATTERING AND PHOTOLUMINESCENCE STUDIES OF ERBIUM IMPLANTED GaAs, S.E. Daly, M.O. Henry, Dublin City University, School of Physical Sciences, Dublin, Ireland; E. Alves, M.F. da Silva, ITN, Sacavém, Portugal; J.C. Soares, CFNUL, Lisboa, Portugal; R. Gwilliam, B.J. Sealy, University Surrey, Department of Electrical Electronic Engineering, Guilford, United Kingdom; K. Freitag and R. Vianden, ISKP, University of Bonn, Bonn, Germany.

4:45 P.M. D8.7
ACTIVATION OF Yb LUMINESCENCE IN GaAs BY GROUP VI ELEMENTS CODOPING, V.M. Konnov, T.V. Larikova, N.N. Loyko, V.A. Dravin, V.V. Ushakov, A.A. Gippius, P.N. Lebedev Physical Institute of the Academy of Sciences of Russia, Moscow, Russia.

SESSION D9: ELECTROLUMINSCENCE AND INTEGRATION
Chair: S.J. Pearton
Wednesday Morning, April 10
Sunset B

8:30 A.M. *D9.1
EXCITATION MECHANISMS AND LIGHT EMITTING DEVICE PERFORMANCES IN Er-DOPED CRYSTALLINE Si, F. Priolo, University of Catania, Department of Physics, Catania, Italy; S. Coffa, CNR-IMETEM, Catania, Italy; G. Franzo, University of Catania, Department of Physics, Catania, Italy; A. Polman, FOM-AMOLF, Amsterdam, Netherlands; S. Libertino, University of Catania, Department of Physics, Catania, Italy; and A. Carnera, University of Padova, Department of Physics, Padova, Italy.

9:00 A.M. *D9.2
ERBIUM DOPED SILICON FOR LIGHT EMITTING DEVICES, J. Michel, Massachusetts Institute of Technology, Cambridge, MA.

9:30 A.M. D9.3
1.54 um ELECTROLUMINESCENCE FROM ERBIUM DOPED GALLIUM PHOSPHIDE DIODES, G.M. Ford and B.W. Wessels, Northwestern University, Department of Materials Science and Engineering, Evanston, IL.

9:45 A.M. D9.4
NEODYMIUM-DOPED GaAs LIGHT EMITTING DIODES, Shoou-Jinn Chang, National Cheng Kung University, Department of Electrical Engineering, Tainan, Taiwan.

10:00 A.M. D9.5
ELECTROLUMINESCENCE OF ERBIUM IN OXYGEN DOPED SILICON, S. Lombardo, S.U. Campisano, CNR-IMETEM, Catania, Italy; G.N. van den Hoven and A. Polman, FOM-AMOLF, Amsterdam, Netherlands.

10:15 A.M. D9.6
INCREASED REFRACTIVE INDICES IN RARE EARTH-DOPED InP AND In0.53Ga0.47As THIN FILMS, Bethanie J.H. Stadler and Joseph P. Lorenzo, USAF Rome Laboratory, Optoelectronic Components Branch, Hanscom AFB, MA.

10:30 A.M. BREAK

SESSION D10: STRUCTURAL, ELECTRICAL AND
OPTICAL PROPERTIES III
Chair: T. Gregorkiewicz

11:00 A.M. D10.1
Er3+ RELATED VISIBLE AND NEAR INFRARED LUMINESCENCE IN ERBIUM IMPLANTED 6H SiC, M. Yoganathan, W.J. Choyke, R.P. Devaty, University of Pittsburgh, Department of Physics and Astronomy, Pittsburgh, PA; G. Pensl, Universität Erlangen Nürnberg, Lehrstuhl Angewandte Physik, Erlangen, Germany; and J.A. Edmond, Cree Research, Durham, NC.
11:15 A.M. D10.2
PHOTOLUMINESCENCE OF ERBIUM IMPLANTED IN SiGe, S.J. Chang, National Cheng Kung University, Department of Electrical Engineering, Tainan, Taiwan; D.K. Nayak and Y. Shiraki, University of Tokyo, Research Center for Advanced Science and Technology, Tokyo, Japan.

11:30 A.M. D10.3
STUDY OF THE ZEEMAN EFFECT OF Er3+IN GaAs:Er,O, D. Haase, A. Dörnen, Universität Stuttgart, Stuttgart, Germany; K. Takahei and A. Taguchi, NTT Basic Research Laboratories, Morinosato-Wakamiya, Japan.

11:45 A.M. D10.4
LUMINESCENCE FROM ERBIUM IMPLANTED HYDROGENATED AMORPHOUS SILICON: INFLUENCE OF THE HYDROGEN AND OXYGEN CONCENTRATION, Mohamed Kechouane, Nasser Beldi and Tayeb Mohammed-Brahim, Laboratoire "Couches Minces et Semiconducteurs", Institute de Physique, Algerie; Hélène L'Haridon, Michel Salvi, Marcel Gauneau and Pierre-Nöel Favennec, France Telecom, CNET, Lannion, France.

SESSION D11: STRUCTURAL, ELECTRICAL AND
OPTICAL PROPERTIES IV: POROUS Si
Chair: J.M. Zavada
Wednesday Afternoon, April 10
Sunset B

1:30 P.M. D11.1
CHARACTERIZATION OF VISIBLE AND INFRARED(1.54 um) LUMINESCENCE FROM Er-DOPED POROUS SILICON, R. White, X. Wu, U. Hömmerich, Hampton University, Research Center for Optical Physics, Hampton, VA; F. Namavar and A. Cremins-Costa, Spire Corporation, Bedford, MA.

1:45 P.M. D11.2
1.54um ROOM-TEMPERATURE LUMINESCENCE OF Er-DOPED POROUS Si, S. Komuro, X. Zhao, S. Maruyama, H. Isshiki, Y. Aoyagi and T. Sugano, Frontier Research Program, The Institute of Physical and Chemical Research, Wako, Japan.
2:00 P.M. D11.3
TO PROBE THE ABSORPTION EDGE OF POROUS SILICON BY ERBIUM, X. Zhao, S. Komuro, H. Isshiki, Y. Aoyagi and T. Sugano, Frontier Research Program, The Institute of Physical and Chemical Research, Wako, Japan.

2:15 P.M. D11.4
SHARP 1.54 um LUMINESCENCE OF POROUS SILICON ELECTROCHEMICALLY DOPED WITH ERBIUM, Alexander Dorofeev, Vitaly Bondarenko and Nikolay Kazuchits, BSUIR, Microelectronics, Minsk, Belarus.

2:30 P.M. CONCLUDING REMARKS

The following exhibitors have identified their products and services as directly related to your research:

Academic Press
American Institute of Physics
Elsevier Science, Inc.
High Voltage Engineering Europa
IOP Publishing, Inc.
Kluwer Academic Publishers
Lake Shore Cryotronics, Inc.
Kurt J. Lesker Co.
Magnet Sales & Manufacturing
Omicron Associates
Philips Semiconductors/Materials Analysis Group

See page 6 for a complete list of exhibitors.