The symposium program includes 13 invited speakers, over 130 contributed papers and a panel discussion. Because of the rapid developments of new research andapplications involving III-N, SiC and Diamond semiconductors, we invitesubmission of Late News Posters for this symposium. These papers should represent significant advances that have not been widely discussed. A very limited number will be accepted and presented.

The accepted Late News Posters will be displayed for a single day at the meeting. Viewing will be during morning and afternoon coffee breaks, and manuscripts will be considered for the proceedings volume.

Abstracts should be prepared following the MRS Format and should be submitted by Email or FAX to Bob Nemanich (see below) prior to February 29. Abstracts will be considered as they are received.

Symposium Organizers:

D. Kurt Gaskill
Naval Research Laboratory
Washington, DC 20375-5000
Phone: 202-404-8712
Fax 202-767-4290
[email protected]

Chuck Brandt
Westinghouse Science &Technology Center
Pittsburgh, PA 15235
Phone: 412-256-1881 Fax 4120-256-1877
[email protected]

Robert J. Nemanich
N. C. State University
Raleigh, NC 27695-8202
Phone:919-515-3225
Fax: 919-515-7331
[email protected]

Note: Not all papers that appear in this listing are included in the proceedings volume.


Chairs

D. Kurt Gaskill Chuck Brandt
Naval Research Laboratory Westinghouse Science & Technology Center

Robert J. Nemanich
North Carolina State University

Symposium Support

Office of Naval Research
Advanced Research Projects Agency
Air Force Office of Scientific Research
Air Force Wright Laboratory


*Invited Paper

SESSION E1: DEVICE TECHNOLOGIES I
Chair: D. Kurt Gaskill and Bruce Wessels
Monday Morning, April 8
Presidio Ballroom

8:30 A.M. *E1.1
WIDE BANDGAP SEMICONDUCTOR TRANSISTOR MICROWAVE AMPLIFIERS, R.J. Trew, Case Western Reserve University, Department of Electrical Engineering and Applied Physics, Cleveland, OH.

9:00 A.M. *E1.2
HIGH-TEMPERATURE AND HIGH-FREQUENCY CHARACTERISTICS OF GaN FETS, S.C. Binari, Naval Research Laboratory, Washington DC.

9:30 A.M. *E1.3
SiC DEVICE DoD APPLICATIONS, Laura S. Rea, U.S. Air Force, Materials Directorate, WPAFB, OH.

10:00 A.M. BREAK

10:30 A.M. *E1.4
SiC POWER DEVICES, T. Paul Chow, Rensselaer Polytechnic Institute, Troy, NY; and Mario Ghezzo, GE Corporate Research and Development, Schenectady, NY.

11:00 A.M. *E1.5
ELECTRON EMISSION FROM CVD DIAMOND, P.K. Bachmann, D.U. Wiechert, Phillips Research Laboratories, Aachen, Germany; F. Lacher, P. Koidl, Fraunhofer Institute for Applied Solid State Physics, Freiburg, Germany.

11:30 A.M. E1.6
INVESTIGATION OF AN NEA DIAMOND VACUUM MICROTRIODE ARRAY, C.W. Hatfield, G.L. Bilbro, A.S. Morris, P.K. Baumann, B.L. Ward and R.J. Nermanich, North Carolina State University, Department of Electrical and Computer Engineering, Raleigh, NC.

11:45 A.M. E1.7
TETRAHEDRAL AMORPHOUS CARBON THIN FILM TRANSISTORS, F.J. Clough, B. Kleinsorge, W.I. Milne, J. Robertson, Cambridge University, Engineering Department, Cambridge, United Kingdom.

SESSION E2: CRYSTAL AND FILM GROWTH I
Chair: Chuck Brandt and Rich Molnar
Monday Afternoon, April 8
Presidio Ballroom

1:30 P.M. *E2.1
GROWTH OF HIGH QUALITY InGaN/GaN HETEROSTRUCTURE MATERIALS BY ATMOSPHERIC PRESSURE MOCVD, Steven P. DenBaars, University of California, Santa Barbara, Materials Department, Santa Barbara, CA; Stacia Keller and Bernd Keller, University of California, Santa Barbara, ECE Department, Santa Barbara, CA.

2:00 P.M. *E2.2
SILICON CARBIDE CVD APPROACHES INDUSTRIAL NEEDS, R. Rupp, P. Lanig, J. Völkl and D. Stephani, Siemens AG, Corporate Research and Development, Erlangen, Germany.

2:30 P.M. *E2.3
GaN FILM GROWTH, Kathleen Doverspike, Hewlett Packard, San Jose, CA.

3:00 P.M. BREAK

3:30 P.M. *E2.4
SiC MATERIALS AND DEVICES FOR HIGH FREQUENCY APPLICATIONS, R.H. Hopkins, A.K. Agarwal, G. Augustine, A.A. Burk, R.C. Clarke, R.C. Glass, H.M. Hobgood, L.B. Rowland, S. Seshadri, R.R. Siergiej, T.J. Smith and S. Sriram, Westinghouse Science and Technology Center, Pittsburgh, PA.

4:00 P.M. *E2.5
KINETICS APPROACH TO THE GROWTH OF c-BN FILMS, Roy Clarke, University of Michigan, Department of Physics, Ann Arbor, MI.

4:30 P.M. E2.6
ANALYSIS OF THE SUBLIMATION GROWTH PROCESS OF SILICON CARBIDE BULK CRYSTALS, R. Eckstein, D. Hofmann, St. G. Müller, A. Winnacker, University Erlangen-Nürnberg, Department of Materials Science, Erlangen, Germany; P. Kaufmann, Y. Makarov, University of Erlangen, Fluid Mechanics, Erlangen, Germany; G. Pensl, University Erlangen, Applied Physics, Erlangen, Germany.

4:45 P.M. E2.7
PROPERTIES OF TETRAHEDRAL AMORPHOUS CABRON, M. Chhowalla, C.W. Chen, B. Kleinsorge, J. Robertson, W.I. Milne and G. Amaratunga, Cambridge University, Engineering Department, Cambridge, United Kingdom.

SESSION E3: DEFECTS, DOPANTS & CHARACTERIZATION I
Chair: Robert Nemanich and Walter Lambrecht
Tuesday Morning, April 9
Presidio Ballroom

8:30 A.M. *E3.1
THEORY OF DEFECTS, DOPING, SURFACES AND INTERFACES IN WIDE GAP NITRIDES, J. Bernholc, P. Boguslawski, E.L. Briggs, B. Chen, K. Rapcewicz, B. Yakobson and Z. Zhang, North Carolina State University, Department of Physics, Raleigh, NC.

9:00 A.M. *E3.2
DIAMOND SURFACE CHEMISTRY, Pehr E. Pehrsson, Naval Research Laboratory, Chemistry Division, Washington DC; Thomas W. Mercer, Naval Research Laboratory, NRC/NRL Postdoctoral Fellow, Chemistry Division, Washington DC.

9:30 A.M. *E3.3
STRUCTURAL DEFECTS AND THEIR RELATIONSHIP TO NUCLEATION OF GaN THIN FILMS, W. Qian, M. Skowronski, G.S. Rohrer, Carnegie Mellon University, Department of Materials Science and Engineering, Pittsburgh, PA.

10:00 A.M. BREAK

10:30 A.M. E3.4
ELECTRONIC AND OPTICAL INVESTIGATION OF THE POSITION OF VANADIUM IMPURITIES IN THE 4H AND 6H SiC BANDGAPS, J.R. Jenny, M. Skowronski, Carnegie Mellon University, Department of Materials Science and Engineering, Pittsburgh, PA; W.C. Mitchel, A.O. Evwaraye, S.R. Smith, Wright Laboratory (WL/MLPO) Wright-Patterson Air Force Base, OH; H.M. Hobgood, R.C. Glass, G. Augustine and R.H. Hopkins, Westinghouse Science and Technology Center, Pittsburgh, PA.

10:45 A.M. E3.5
HIGH TEMPERATURE SURFACE DEGRADATION OF InAlN AND InGaN, C.B. Vartuli, S.J. Pearton, C.R. Abernathy, J.D. MacKenzie, University of Florida, Department of Materials Science and Engineering, Gainsville, FL; J.C. Zolper and A.J. Howard, Sandia National Laboratories, Albuquerque, NM.

11:00 A.M. E3.6
CHARACTERIZATION OF DEEP LEVEL DEFECTS IN 4H AND 6H SiC VIA DLTS, SIMS AND MEV E-BEAM IRRADIATION, J.P. Doyle, M.O. Aboelfotoh, B.G. Svensson, Royal Institute of Technology, Solid State Electronics, Kista-Stockholm, Sweden; A. Schöner, N. Nordell and C. Harris, Swedish Industrial Microelectronics Center Electrum, Kista-Stockholm, Sweden.

11:15 A.M. E3.7
DEEP LEVEL DEFECTS IN Mg-DOPED GaN, G.-C. Yi and B.W. Wessels, Northwestern University, Department of Materials Science and Engineering, Evanston, IL.

11:30 A.M. E3.8
DLTS AND CV ANALYSIS OF DOPED AND N-IMPLANTED GaN, D. Haase, M. Schmid, A. Dörnen, V. Härle, H. Bolay, F. Scholz, M. Burkhard and H. Schweizer, University of Stuttgart, 4 Physikalisches Institut, Stuttgart, Germany.

11:45 A.M. E3.9
ACTIVATION OF ACCEPTORS IN Mg-DOPED, P-TYPE GaN, W. Gotz, N.M. Johnson, J. Walke, D.B. Bour, R.A. Street, Xerox Palo Alto Research Center, Palo Alto, CA.

SESSION E4: DEFECTS, DOPANTS & CHARACTERIZATION II
Chair: Jerzy Bernholc and Brad Pate
Tuesday Afternoon, April 9
Presidio Ballroom

1:30 P.M. E4.1
TRANSMUTATION DOPING OF DIAMOND FILMS, S. Khasawinah, G. Popovici, M.A. Prelas, University of Missouri, Nuclear Engineering Department, Columbia, MO; J.W. Farmer, University of Missouri, Research Reactor, Columbia, MO; R.G. Wilson, Hughes Research Laboratories, Malibu, CA; H. White and F. Shahedipour, University of Missouri, Department of Physics, Columbia, MO.

1:45 P.M. E4.2
IMPURITY CONDUCTION IN N-TYPE 4H-SiC, A.O. Eywarave, Wright Laboratory, MLPO, Wright-Patterson Air Force Base, OH; S.R. Smith University of Dayton, UDRI, Dayton, OH; and W.C. Mitchel, Wright Laboratory, MLPO. Wright-Patterson Air Force Base, OH.

2:00 P.M. E4.3
ESR AND LESR STUDIES IN CVD DIAMOND, C.F.O. Graeff, E. Rohrer, C.E. Nebel and M. Stutzmann, Walter Schottky Institute, TU-München, Garching, Germany.

2:15 P.M. E4.4
THEORETICAL STUDY OF HYDROGEN IN CUBIC GaN, S. Estreicher, Texas Tech Institute, Department of Physics, Lubbock, TX; and D. Maric, Swiss Scientific Computing Center, Manno, Switzerland.

2:30 P.M. E4.5
ROLE OF HYDROGEN AND HYDROGEN COMPLEXES IN DOPING OF GAN, Jörg Neugebauer and Chris G. Van de Walle, Xerox Palo Alto Research Center, Palo Alto, CA.

2:45 P.M. E4.6
ELECTRON EMISSION FROM NEA DIAMOND: EXCITON TRANSPORT STUDIES, Wen-Yen Chang, Bradford B. Pate and Christos Bandis, Washington State University, Department of Physics, Pullman, WA.

3:00 P.M. BREAK

SESSION E5: CRYSTAL AND FILM GROWTH II
Chairs: Roland Rupp and Laura Rea

3:30 P.M. E5.1
THE IMPACT OF PREGROWTH CONDITIONS AND SUBSTRATE POLYTYPE ON SiC EPITAXIAL LAYER MORPHOLOGY, A.A. Burk Jr., L.B. Rowland, G. Augustine, H.M. Hobgood and R.H. Hopkins, Westinghouse Science and Technology Center, Pittsburgh, PA.

3:45 P.M. E5.2
SURFACE RECONSTRUCTIONS OF ZINCBLENDE GaN, J. Elsner, M. Haugk, J. Widany and Th. Frauenheim, Technische Universität, Institut für Physik, Chemnitz, Germany.

4:00 P.M. E5.3
X-RAY DIFFRACTION ANALYSIS OF STRAIN AND MOSAIC STRUCTURE IN (001) ORIENTED HOMOEPITAXIAL DIAMOND FILMS, W. Brock Alexander, ASEE/NRL Postdoctoral Research Associate, Chemistry Division, Washington DC; Pehr E. Pehrsson, Naval Research Laboratory, Chemistry Division, Washington DC; David Black, National Institute of Standards and Technology, Gaithersburg, MD; James E. Butler, Naval Research Laboratory, Chemistry Division, Washington DC.

4:15 P.M. E5.4
HIGH-RESOLUTION X-RAY DIFFRACTION ANALYSIS OF GaN GROWN ON SAPPHIRE BY HALIDE VAPOR PHASE EPITAXY, R.J. Matyi, University of Wisconsin, Madison, Department of Chemical Engineering, Madison, WI; D. Zhi, N.R. Perkins, M.N. Horton, University of Wisconsin, Madison, Materials Science Program, Madison, WI; and T.F. Kuech, University of Wisconsin, Madison, Department of Chemical Engineering, Madison, WI.

4:30 P.M. E5.5
STABILITY AND RECONSTRUCTION OF SiC SURFACE, R. Gutierrez and Th. Frauenheim, Technische Universität, Institut für Physik, Chemnitz, Germany.

4:45 P.M. E5.6
HRTEM STUDY OF EPITAXIAL GaN GROWN BY MBE, Y. Xin, P.D. Brown, C.J. Humphreys, University of Cambridge, Department of Materials Science and Metallurgy, Cambridge, United Kingdom; T.S. Chen and C.T. Foxon, University of Nottingham, Department of Physics, Nottingham, United Kingdom.

SESSION E6: POSTER SESSION
Chairs: Chuck Brandt, D. Kurt Gaskill and Robert Nemanich
Tuesday Evening, April 9
8:00 P.M.
Presido Ballroom

E6.1 ELECTRON SCATTERING BY NATIVE DEFECTS IN III-V NITRIDES AND THEIR ALLOYS, Leonardo Hsu, Lawrence Berkeley National Laboratory, Department of Physics, Berkeley, CA; Wladyslaw Walukiewicz and Franz X. Zach, Lawrence Berkeley National Laboratory, Department of Materials Science, Berkeley, CA.

E6.2 ELECTRICAL CHARACTERIZATION OF MAGNESIUM-DOPED GALLIUM NITRIDE GROWN BY METALORGANIC VAPOR PHASE EPITAXY, J.W. Huang and T.F. Kuech, University of Wisconsin, Madison, Department of Chemical Engineering, Madison, WI; Hongqiang Lu and Ishwara Bhat, Rensselaer Polytechnic Institute, Electrical, Computer and Systems Engineering Department, Troy, NY.

E6.3 ELECTRONIC STRUCTURE OF BERYLLIUM, MAGNESIUM AND SILICON IMPURITIES IN CUBIC GALLIUM NITRIDE, V.A. Gubanov, San Jose State University, Physics, San Jose, CA; Barry M. Klein and C.Y. Fong, University of California, Davis Physics, Davis, CA.

E6.4 CRYSTAL RELAXATION AND PRESSURE DEPENDENCE OF IMPURITY STATES IN DOPED CUBIC BORON NITRIDE, C.Y. Fong, University of California, Davis Physics, Davis, CA; V.A. Gubanov, E. Pentaleri, San Jose State University, Physics, San Jose, CA; Barry M. Klein, University of California, Davis Physics, Davis CA; and L.A. Hemstreet, Naval Research Laboratory, Washington, DC.

E6.5 BAND-GAP BOWING AND ENERGY OF FORMATION IN III-N ALLOYS, Walter R.L. Lambrecht, Segall Benjamin and Kwiseon Kim, Case Western Reserve University, Department of Physics, Cleveland, OH.

E6.6 CHARACTERIZATION OF DEFECT STRUCTURES IN 3C-SiC SINGLE CRYSTALS, W. Huang, S. Wang, M. Dudley, SUNY at Stony Brook, Department of Materials Science and Engineering, NY; C. Fazi, U.S. Army Research Laboratory, Adelphi, MD.

E6.7 THERMAL AND OPTICAL ADMITTANCE SPECTROSCOPY STUDIES OF DEFECTS IN 15R-SiC, S.R. Smith, University of Dayton, Research Institute, Dayton, OH; A.O. Evwaraye, University of Dayton, Department of Physics, Dayton, OH; and W.C. Mitchel, Wright Laboratory, MLPO, Wright-Patterson Air Force Base, OH.

E6.8 LOCAL-FIELD AND EXCHANGE-CORRELATION EFFECTS IN OPTICAL SPECTRA OF WIDE-BAND-GAP SEMICONDUCTORS, V.I. Gavrilenko and F. Bechstedt, Friedrich-Schiller-Universität Jena, IFTO, Jena, Germany.

E6.9 PHOTOLUMINESCENCE EXCITATION OF CVD DIAMOND BY ULTRAVIOLET SYNCHROTRON RADIATION, Jaihyung Won, Akimitsu Hatta, Nobuhiro Eimori, Hiroyuki Yagyu, Toshimichi Ito, Sasaki Takatomo and Akio Hiraki, Hiraki Laboratory, Electrical Engineering, Osaka, Japan.

E6.10 SCANNING TUNNELING MICROSCOPY STUDIES OF AN ION-BOMBARDED DIAMOND (100) SURFACE, Like Ruan, Leo Lau, University of Western Ontario, Department of Materials Engineering, London, Canada; P.R. Norton and Gao Lijun, University of Western Ontario, Department of Chemistry, London, Canada.

E6.11 ELECTRON PARAMAGNETIC RESONANCE AND POSITRON ANNIHILATION STUDIES OF HF-CVD DIAMOND FILMS, D.J. Keeble, University of Dundee, Department of Applied Physics, Dundee, United Kingdom; B. Ramakrishnan, A. Krishnan, H. Rodrigo, A. Kulkami, Michigan Technological University, Department of Physics, Houghton, MI; P. Asoka-Kumar and K.G. Lynn, Brookhaven National Laboratory, Department of Physics, Upton, NY.

E6.12 SURFACE CHEMICAL EFFECTS ON THE ELECTRICAL AND OPTICAL PROPERTIES OF THIN POPLYCRYSTALLINE DIAMOND FILMS, A.V. Khomich, V.I. Polyakov, P.I. Perov, A.I. Rukovishnikov, Institute of Radio Engineering and Electronics, RAS, Moscow, Russia; and S.P. Vnukov, Institute of Physical Chemistry, RAS, Moscow, Russia.

E6.13 TRAPPING CENTERS IN CVD DIAMOND FILMS CHARACTERIZED BY DEEP LEVEL TRANSIENT AND POSITION ANNIHILATION SPECTROSCOPES, V.I. Polyakov, A.I. Rukovishnikov, A.V. Khomich, RAS, Institute of Radio Engineering and Electronics, Moscow, Russia; B.F. Dorfman, M.G. Abraizov, B.L. Druzm SUNY of Farmingdale, Atomic-Scale Design Inc., Farmingdale, NY; P. Asoka-Kumar, National Laboratory, Upton, NY; V.P. Varnin, L.G. Teremetskay, RAS, Institute of Physical Chemistry, Moscow, Russia.

E6.14 ELECTRICAL CONDUCTIVITY OF BORON DIFFUSED DIAMOND FILMS, T. Sung, G. Popovici, M.A. Prelas, University of Missouri, Nuclear Engineering Department, Columbia, MO; R.G. Wilson, Hughes Research Laboratories, Malibu, CA; and Kim Bigelow, Norton Diamond Film, Northgboro, MA.

E6.15 MEASUREMENT OF THE ACTIVATION ENERGY IN PHOSPHOROUS DOPED POLYCRYSTALLINE DIAMOND THIN FILMS GROWN ON SILICON SUBSTRATES BY HOT FILAMNENT CHEMICAL VAPOR DEPOSITION, Sattar Mirzakuchaki and E.J. Charlson, University of Missouri-Columbia, Columbia, MO.

E6.16 PROPERTIES OF NEUTRON IRRADIATED DIAMOND AND DIAMOND-LIKE FILMS, S. Khasawinah, Galina Popovici, M.A. Prelas, University of Missouri, Nuclear Engineering Department, Columbia, MO; J.W. Farmer, University of Missouri-Columbia, Research Reactor, Columbia, MO; H. White, University of Missouri, Department of Physics, Columbia, MO; and T. Stoica, Institute of Physics and Technology of Materials, Magurele, Romania.

E6.17 N-TYPE SiC ELECTROCHEMICAL ETCHING WITHOUT ULTRA-VIOLET PHOTOEXCITATION, Deven M. Collins and Gary L. Harris, Howard University, Department of Materials Science Research and Chemical Engineering, Washington DC.

E6.18 RAMAN SPECTROSCOPY INVESTIGATION OF HIGH DOSE IMPLANTATION IN 6H-SiC, Dietrich R.T. Zahn, Thomas Werninghaus, TU Chemnitz-Zwickau, Semiconductor Physics, Chemnitz, Germany; Jorg Pezoldt, TU Ilmenau, Institute of Solid State Electronic, Ilmenau, Germany; and Viton Heera, Research Center Rossendorf, Institute of Ion Beam, Dresden, Germany.

E6.19 CHARACTERIZATION OF 4H-SiC JFETS FOR USE IN ANALOG AMPLIFIERS CAPABLE OF 723K OPERATION, Jeffrey B. Casady, David C. Sheridan, William C. Dillard and R. Wayne Johnson, Auburn University, NASA Center for Commercial Development of Space, Electrical Engineering Department, Auburn, AL.

E6.20 ION-BEAM SYNTHESIS OF ß-SiC BURIED LAYER, Xueliang Chen, Jinlong Yan, Changqing Chen, Huanzhang Huang, Shanghai Institute of Metallurgy, Microelectronics Branch, Shanghai, China.

E6.21 AN ANNEALING STUDY OF Ge IMPLANTED 6H-SiC, Y. Pacaud, W. Weishart, M. Voelskow, W. Skorupa, Institut für Ionenstrahlphysik and Materialforschung, Dresden, Germany; A. Perez-Rodriguez, Universitat de Barcelona, Department de Fisica Aplicada i Electronica, Barcelona, Spain; J. Stoemenos, Aristotle University of Thessaloniki, Department of Physics, Thessaloniki, Greece; and G. Brauer, TU Dresden c/o Forschungszentrum Rossendorf e.V., Dresden, Germany.

E6.22 INVESTIGATION OF THE FIELD EMISSION CURRENT OF POLYCRYSTALLINE DIAMOND FILMS, John W. Glesener and Arthur A. Morrish, Naval Research Laboratory, Optical Sciences Division, Washington, DC.

E6.23 FIELD EMISSION AND BAND BENDING CONSIDERATIONS FROM HIGH-QUALITY NEA DIAMOND, Bradford B. Pate, Christos Bandis, Washington State University, Department of Physics, Pullman, WA; and William Phillips, Crystallume, Research Department, Santa Clara, CA.

E6.24 DIAMOND-COATED SILICON-TIP FIELD EMITTERS, E.I. Givardgizov and V.V. Zhirnov, Institute of Crystallography, Russian Academy of Sciences, Moscow, Russia.

E6.25 INVESTIGATION FIELD EMISSION FROM DIAMOND-LIKE CARBON FILMS, V.G. Litovchenko, A.A. Evtukh, R.I. Marchenko, M.I. Klyui, S.I. Frolov and V.A. Semenovich, Institute of Semiconductor Physics, Physical Bases of Microelectronics, Kiev, Ukraine.

E6.26 ELECTRON FIELD EMISSION FROM DIAMOND-LIKE CARBON, J. Robertson, Cambridge University, Engineering Department, Cambridge, United Kingdom; S.R.P. Silva, Surrey University, Electronic Engineering Department, Guildford, United Kingdom; G. Amaratunga, Liverpool University, Electrical Engineering Department, LIverpool, United Kingdom; and W.I. Milne, Cambridge University, Cambridge, United Kingdom.

E6.27 GaN GROWTH BY NITROGEN ECR-CVD METHOD, Kuei-Hsien Chen, Chih-Hsian Chao, Institute of Atomic and Molecular Sciences, Academia Sinica, Taipei, Taiwan; Ying-Jay Yang, National Taiwan University, Department of Electrical Engineering, Taipei, Taiwan; Li-Chyong Chen, Chun-Ku Chen, National Taiwan University, Center for Condensed Matter Sciences, Taipei, Taiwan; Chih-Haw Yang, Fu-Jen University, Physics Department, Taipei, Taiwan; and Hong-Yu Lin, Tar-Tung Institute of Technology, Department of Physics, Taipei, Taiwan.

E6.28 PROPERTIES OF ALUMINUM NITRIDE AND SILICON CARBIDE THIN FILMS DEPOSITED BY PULSED EXCIMER LASER DEPOSITION, H.C. Ong, H.T. Zhou, G.T. Klehne, G.K. Wong, J.B. Ketterson and R.P.H. Chang, Northwestern University, Evanston, IL.

E6.29 X-RAY DIFFRACTION STUDY OF AlN AND GaN EPILAYERS, Chinkyo Kim, Ian Robinson, University of Illinois, Department of Physics, Urbana Il; Jae-Min Myoung, Kyu-Hwan Shim, Kevin Kim, University of Illinois, Department of Electrical and Computer Engineering, Urbana, IL; and Myung-Cheol Yoo, Samsung Advanced Institute of Technology, Suwon, Korea.

E6.30 ALUMINIUM AND GALLIUM-AMIDE PRECURSORS FOR SYNTHESIS OF MAIN GROUP III-V NITRIDE QUANTUM DOTS IN SILICATE MATRICES, Mark Niemeyer, Timothy J. Goodwin and Philip P. Power, University of California, Department of Materials Science and Chemical Engineering, Davis, CA.

E6.31 P-TYPE GaN FILMS GROWN BY PLASMA-ASSISTED IONIZED SOURCE BEAM EPITAXY, Jae-Min Myoung, University of Illinois, Department of Materials Science and Engineering, Urbana, IL; Chinkyo Kim, University of Illinois, Department of Physics, Urbana, IL; Kyu-Hwan Shim, University of Illinois, Department of Materials Science and Engineering, Urbana, IL; Oleg V. Gluschenkov, Kevin Kim, University of Illinois, Department of Electrical and Computer Engineering, Urbana, IL; and Myung-Cheol Yoo, Samsung Advanced Institute of Technology, Suwon, Korea.

E6.32 SIMULATION OF TRANSPORT AND REACTION PROCESS INFLUENCING GROWTH RATE AND COMPOSITION OF AlGaInN, T. Mihopoulos, K.F. Jensen, Massachusetts Institute of Technology, Department of Chemical Engineering, Cambridge, MA; C. Kuo, H. Liu and C. Chen, Hewlett-Packard, Optoelectronics Division, San Jose, CA.

E6.33 HIGHLY ORIENTED ALUMINUM NITRIDE THIN FILMS GROWN BY PLASMA-ASSISTED PULSED LASER DEPOSITION, Tetsuya Ogawa, Mitsuo Okamoto, Yusuke Mori and Takatomo Sasaki, Osaka University, Department of Electrical Engineering, Osaka, Japan.

E6.34 HIGH-TEMPERATURE GAS PHASE REACTIONS OF TRIMETHYL GALLIUM WITH NH3 AND TRIMETHYL AMINE, A. Thon, S.A. Safvi and T.F. Kuech, University of Wisconsin, Madison, Department of Chemical Engineering, Madison, WI.

E6.35 LASER-INDUCED FLUORESCENCE IMAGING OF GAS-PHASE GALLIUM ATOMS UNDER METAL-ORGANIC CHEMICAL VAPOR DEPOSITION CONDITIONS, Christopher J. Duda and Robert W. Carr, University of Minnesota, Department of Chemical Engineering, Minneapolis, MN.

E6.36 OPTIMIZATION OF REACTOR GEOMETRY AND GROWTH CONDITIONS FOR THE GaN HALIDE VAPOR PHASE EPITAXY, S.A. Safvi, N.R. Perkins, M.N. Horton and T.F. Kuech, University of Wisconsin, Madison, Department of Chemical Engineering, Madison, WI.

E6.37 LASER WAVELENGTH DEPENDENT PROPERTIES OF BN THIN FILMS DEPOSITED BY LASER ABLATION, Yoshiaki Suda and Takeshi Nakazono, Sasebo National College of Technology, Department of Electrical Engineering, Nagasaki, Japan; Kenji Ebihara, Kumamoto University, Department of Electrical Engineering and Computer Science, Kumamoto, Japan; and Koumei Baba, Technology Center of Nagasaki, Nagasaki, Japan.

E6.38 NUCLEATION AND GROWTH OF GALLIUM NITRIDE FILMS ON Si AND SAPPHIRE SUBSTRATES USING BUFFER LAYERS, N.R. Perkins, M.N. Horton and T.F. Kuech, University of Wisconsin, Madison, Department of Chemical Engineering, Madison, WI.

E6.39 X-RAY COMPLEX STUDYING GaN FILMS GROWN ON SiC, M.E. Boiko, Ioffe Physical-Technical Institute, St. Petersburg, Russia.

E6.40 PREPARATION AND CHARACTERIZATION OF WURTZITIC GaN SINGLE CRYSTALS IN NANO AND MICRO SCALE, San Yu, Hongdong Li, Haibiu Yang, Dongmei Li, Haiping Sun, Guangian Zou, Jilm University, State Key Lab for Superhard Materials, Changehn, China.

E6.41 PHOTOREFLECTANCE STUDY OF GaN FILM GROWN BY METALORGANIC CHEMICAL VAPOR DEPOSITION, Kai Yang, Youdou Zheng, Nanjiang University, Physics Department, Jiangsu, China.

E6.42 MORPHOLOGICAL CHARACTERIZATION OF EPITAXIAL SiC LAYERS ON SILICON FORMED BY ION BEAM SYNTHESIS, Jörg K.N. Lindnewr, Kerstin Volz and Bernd Stritzker, Universität Augsburg, Institute für Physik, Augsburg, Germany.

E6.43 OPTICAL CHARACTERIZATION OF GaN FILMS GROWN ON (0001) SAPPHIRE SUBSTRATE, Kai Yang, Youdou Zheng, Nanjing University, Physics Department, Jiangsu, China.

E6.44 ATMOSPHERIC PRESSURE CHEMICAL VAPOR DEPOSITION OF OPTICALLY TRANSPARENT CUBIC SILICON CARBIDE, Michael W. Russell, NRC Postdoctoral Research Associate, Washington DC; Jamie A. Freitas and James E. Butler, Naval Research Laboratory, Washington DC.

E6.45 COMPUTER SIMULATION OF SURFACE DIFFUSION OF SILICON AND CARBON ADATOMS ON SiC(001), Q.A. Bhatti and C.C. Matthai, UWCC, Department of Physics and Astronomy, Cardiff, United Kingdom.

E6.46 OPTICAL AND STRUCTURAL PROPERTIES OF -Si1-XCX Kai Yang, Youdou Zheng, Nanjing University, Physics Department, Jiangsu, China.

E6.47 SiC THIN FILM FORMATION BY ION-ASSISTED Si AND C DEPOSITION, Ali Bousetta, University of Houston, Department of Space Vacuum Epitaxy Center, Houston, TX; and Joseph Kulik, University of Houston, Department of Texas Center for Superconducting, Houston, TX.

E6.48 ATOMIC AND ELECTRONIC STRUCTURE OF 3C SiC(111) AND 3C SiC(001) SURFACES, J. Furthmüller, P. Käckell and F Bechstedt, Friedrich-State-University of Jena, Institute for Solid State THeory, Jena, Germany.

E6.49 COMPARISON OF CRYSTALLINE QUALITY OF SiC GROWN ON THIN AND THICK SILICON-ON-INSULATOR STRUCTURES, Fereydoon Namayar, P. Colter, A. Cremins-Costa, E. Gagnon, Spire Corporation, Optoelectronics, Bedford, MA; and D. Perry, Purdue University, Department of Materials Science, West Lafayette, IN.

E6.50 TEM ANALYSIS OF THE OBSERVED PHASES DURING THE GROWTH OF ORIENTED DIAMOND ON NICKEL SUBSTRATES, W. Liu, P.C. Yang, D.A. Tucker, C.A. Wolden, Z. Sitar and R.F. Davis, North Carolina State University, Department of Materials Science and Engineering, Raleigh, NC; J.T. Glass, Kobe Steel USA Inc., Research Triangle Park, NC; J.T. Prater, Army Research Office, Research Triangle Park, NC.

E6.51 SEEDING WITH A DIAMOND SUSPENSION FOR GROWTH OF SMOOTH POLYCRYSTALLINE DIAMOND SURFACES, I. St. Omer, T. Stacy, E.M. Charlson and E.J. Charlson, University of Missouri, Department of Electrical Engineering, Columbia, MO.

E6.52 ELECTRICAL AND MICROSTRUCTURE PROPERTIES OF BORON-DOPED DIAMOND FILMS, Shuit Tong Lee, Wenhui Zou, Joseph K.L. Lai and Ren Jun Zhang, City University of Hong Kong, Department of Physics and Materials Science, Hong Kong.

E6.53 HYDROCARBON PRECURSORS IN THE ONSET OF INITIAL STAGE OF DIAMOND NUCLEATION BY LOW PRESSURE DEPOSITION, Yan Chen, Qingzhe Zhang and Zhangda Lin, Chinese Academy of Sciences, Institute of Physics, State Key Laboratory of Surface Physics, Beijing, China.

E6.54 GROWTH AND PROPERTIES OF UNDOPED AND BORON DOPED CVD DIAMOND FILMS ON AIN/SILICON SUBSTRATES, V.P. Varnin, I.G. Teremetskaya, RAS, Institute of Physical Chemistry, Moscow, Russia; V.I. Polyakov, A.V. Khomich, P.I. Perov, N.M. Rossukanyi, A.I. Rukovishnikov, A.I. Krikunov, RAS, Institute of Radio Engineering and Electronics, Moscow, Russia.

E6.55 EXPITAXIAL DIAMOND FILMS ON SILICON (001) SURFACE, Chonglin Chen, Los Alamos National Laboratories, CMS, Los Alamos, NM; Gary Song, Los Alamos National Laboratories, Los Alamos, NM; and Robert Collins, Pennsylvania State University, Material Research Laboratories, University Park, PA.

E6.56 GROWTH AND CHARACTERIZATION OF POLYCRYSTALLINE DIAMOND THIN FILM ON POROUS SILICON BY HOT FILAMENT CHEMICAL VAPOR DEPOSITION, Sattar Mirzakuchaki, Tina Stacy and Earl Joe Charlson, University of Missouri-Columbia, Department of Electrical Engineering, Columbia, MO.

E6.57 MOLECULAR DYNAMICS STUDY OF DIAMOND/SILICON(001) INTERFACES WITH AND WITHOUT GRAPHIC INTERFACE LAYERS, Michael Sternberg, Case Western Reserve University, Department of Physics, Cleveland, OH; Frauenheim Thomas, University of Technology, Theoretical Physics III, Chemnitz, Germany; Choon H. Lee and Walter R.L. Lambrecht, Case Western Reserve University, Department of Physics, Cleveland, OH.

SESSION E7: DEVICE TECHNOLOGIES II
Chair: Bob Trew and Jeff Cassady
Wednesday Morning, April 10
Presidio Ballroom

8:30 A.M. E7.1
IMPROVED NICKEL SILICIDE OHMIC CONTACTS TO N-TYPE 4H AND 6H-SIC USING NICHROME, E.D. Luckowski, J.R. Williams, M.J. Bozack, T. Isaacs-Smith, Auburn University, Physics Department, AL; and J. Crofton Murray State University, Department of Physics, Murray, KY.

8:45 A.M. E7.2
CHEMICAL AND STRUCTURAL CHARACTERIZATION OF THE Ni-Ti ALLOY/6H-SiC CONTACTS, I. Grimberg, B.-Z.Weiss, M. Eizenberg and Maxim Levit, Technion, Department of Materials Engineering, Haifa, Israel.

9:00 A.M. E7.3
Pd, Pt, Er, AND Sm ON GaN: A STUDY OF INTERFACIAL REACTION, Q.Z. Liu, University of California, San Diego, Electrical and Computer Engineering, LaJolla, CA; N. Perkins, University of Wisconsin, Madison, Department of Chemical Engineering, Madison, WI; T.F. Kuech, University of Wisconsin, Madison, Department of Chemical Engineering, Madison, WI; S.S. Lau, University of California, Electrical and Computer Engineering, LaJolla, CA; and M. Horton, University of Wisonsin, Madison, Department of Chemical Engineering, Madison, WI.

9:15 A.M. E7.4
p-TYPE OHMIC CONTACT ON HETEROEPITAXIAL GaN/AlGaN LAYERS GROWN BY PLASMA ASSISTED IONIZED SOURCE BEAM EPITAXY, Myung C. Yoo, J.W. Lee, T.I. Kim, Samsung Advanced Institute of Technology, Photonics Semiconductor Laboratory, Suwon, Korea; J.M. Myoung, K.H. Shim and K. Kim, University of Illinois at Urbana-Champaign, Department of Electrical and Computer Engineering, Urbana, IL.

9:30 A.M. E7.5
APPROACHES TO HIGH TEMPERATURE CONTACTS TO SILICON CARBIDE, J.M. Delucca and S.E. Mohney, Pennsylvania State University, Department of Materials Science and Engineering, University Park, PA.

9:45 A.M. E7.6
NEGATIVE ELECTRON AFFINITY EFFECTS AND SCHOTTKY BARRIER HEIGHT MEASUREMENTS OF ZIRCONIUM-DIAMOND (100) INTERFACES, P.K. Baumann, B.L. Ward, S.P. Bozeman and R.J. Nemanich, North Carolina State University, Department of Physics, Raleigh, NC.

10:00 A.M. BREAK

10:30 A.M. E7.7
PHOTOASSISTED DRY ETCHING OF GaN: R.T. Leonard and S.M. Bedair, North Carolina State University, Raleigh, NC.

10:45 A.M. E7.8
ELECTRON FIELD EMISSION FROM GRAPHITE, DIAMOND AND DIAMOND-LIKE CARBON FILMS, A.A. Talin, D.A. Ohlberg, L.S. Pan, T.E. Felter, Sandia National Laboratories, Livermore, CA; T.A. Friedmann, J.P. Sullivan and M.P. Siegal, Sandia National Laboratories, Albuquerque, NM.

11:00 A.M. E7.9
DRY ETCH DAMAGE IN InN, InGaN AND InAlN, S.J. Pearton, J.W. Lee, J.D. Mackenzie and C.R. Abernathy, University of Florida, Gainesville, FL; R.J. Shul, Sandia National Laboratories, Albuquerque, NM.

11:15 A.M. E7.10
ELECTRON YIELD AND ENERGY ANALYSIS OF FIELD-EMISSION ELECTRONS FROM DIAMOND SURFACES, D. Ganesan. S.K. Ramanathan and S.C. Sharma, University of Texas at Arlington, Department of Physics and Materials Science and Engineering Program, Arlington, Texas.

11:30 A.M. E7.11
PHOTOCURRENT SENSITIVITIES, SURFACE COLOR AND AUGER SPECTROSCOPY OF SILICON CARBIDE (SiC) BY PHOTOELECTRO-CHEMICAL (PEC) ETCHING, Deven M. Collins and Gary L. Harris, Howard University, Department of Materials Science Research and Chemical Engineering, Washington DC.

11:45 A.M. E7.12
FIELD ELECTRON EMISSION FROM NANOSRYSTALLINE DIAMOND FILMS, A.V. Karabutov, V.I. Konov, S.M. Pimenov, V.G. Ralchenko, V.D. Frolov, M.S. Nunuparov, E.D. Obraztsova, General Physics Institute, Moscow, Russia; V.I. Polyakov, N.M. Rossukanyi, Institute of Radio Engineering and Electronics, Moscow, Russia; and I.A. Leontiev, DiaGasCrown Comp, Moscow, Russia.

SESSION E8: CRYSTAL AND FILM GROWTH III
Chairs: Richard Hopkins and Peter Bachmann
Wednesday Afternoon, April 10
Presidio Ballroom

1:30 P.M. E8.1
STRUCTURAL CHARACTERIZATION OF THICK GAN FILMS GROWN BY HYDRIDE VAPOR PHASE EPITAXY, L.T. Romano, B.S. Krusor, W. Götz and N.M. Johnson, Xerox Palo Alto Research Center, Palo Alto, CA; R.J. Molnar and E. Brown, Massachusetts Institute of Technology, Lincoln Laboratory, Lexington, MA.

1:45 P.M. E8.2
SPIRAL GROWTH FORMS AND MICROPIPES ON THE (0001) SURFACE OF 6H-SIC BOULES GROWN BY PHYSICAL VAPOR TRANSPORT: A SCANNING FORCE MICROSCOPY STUDY, J. Giocondl, G.S. Rohrer, W. Qian, M. Skowronski, Carnegie Mellon University, Department of Materials Science and Engineering, Pittsburgh, PA; V. Ballakrishna, G. Augustine, H.M. Hobgood and R.H. Hopkins, Westinghouse STC, Pittsburgh., PA.

2:00 P.M. E8.3
CHEMICAL BEAM EPITAXY OF GANxP1-x USING A N RADICAL PLASMA SOURCE, Nein-Yi Li, Dave H. Tomich, Wengang G. Bi and Charles W. Tu, University of California, Department of Electrical and Computer Engineering, San Diego, CA; William S. Wong, University of California, Department of Materials Science and Mineral Engineering, Berkeley, CA; and Jim S. Solomon, University of Dayton Research Institute, Dayton, OH.

2:15 P.M. E8.4
NUCLEATION AND GROWTH OF ORIENTED DIAMOND FILMS ON NICKEL SUBSTRATES, P.C. Yang, W. Liu, D.A. Tucker, C.A. Wolden, R.F. Davis and Z. Sitar, North Carolina State University, Department of Materials Science and Engineering, Raleigh, NC; J.T. Glass, Kobe Steel USA Inc., Research Triangle Park, NC; J.T. Prater, Army Research Office, Research Triangle Park, NC.
2:30 P.M. E8.5
INVESTIGATION OF SURFACE MORPHOLOGY AND LUMINESCENCE OF HVPE-GROWN GaN(0001) BY SCANNING TUNNELING MICROSCOPY AND SCANNING TUNNELING LUMINESCENCE, Brad Garni, Jian Ma, N. Perkins, J. Liu, T. Kuech and M.G. Lagally, University of Wisconsin-Madison, Department of Materials Science, Madison, WI.

2:45 P.M. E8.6
EPITAXIAL SCANDIUM COMPLIANT BUFFER LAYER FOR GaN FILM GROWTH, R. Kaplan, S.M. Prokes, A.E. Wickenden and D.D. Koleske, Naval Research Laboratory, Washington DC.

3:00 P.M. BREAK

3:30 P.M. E8.7
MODELLING OF MOVPE OF III-NITRIDES IN MULTIWAFER PLANETARY REACTOR, M. Dauelsberg, L. Kadinski, Yu.N. Makarov, University of Erlangen-Nürnberg, Erlangen, Germany; G. Strauch, D. Schmitz and H. Jürgensen, AIXTRON GmbH, Aachen, Germany.

3:45 P.M. E8.8
MODELLING PF CHEMICAL VAPOR DEPOSITION OF SILICON CARBIDE EPITAXIAL LAYERS IN VERTICAL REACTOR, L. Kadinski, P. Kaufmann, Yu.N. Makarov, University of Erlangen-Nürnberg, Erlangen, Germany; and R. Rupp, Siemens AG, Erlangen, Germany and University of Erlangen-Nürnberg, Erlangen, Germany.

4:00 P.M. E8.9
RECENT IMPROVEMENTS IN PURITY FOR SEVERAL III-NITRIDE GROWTH METHODS, Jon W. Erickson, I.. Ivanov, Charles Evans and Associates, Redwood City, CA; R.G. Wilson, Hughes Research Laboratory, Malibu, CA; and Joan Redwing, Advanced Technology Material, Danbury, CT.

4:15 P.M. E8.10
IMPROVED AIN THIN FILMS GROWN BY MOCVD FROM TRITERTBUTYLALUMINUM AND AMMONIA, Thomas Metzger, Eberhard Born, Lehrstuhl für Angewandte Mineralogie und Geochemie, Garching, Germany; Oliver Ambacher, Martin Stutzmann, Walter Rieger, Roman Dimitrov and Helmut Angerer, Walter Schottky Institution, Garching, Germany.

4:30 P.M. E8.11
LOW VOLUME RESISTIVITY CHEMICAL VAPOR DEPOSITED BORON DOPED POLYCRYSTALLINE THIN DIAMOND FILM ON SAPPHIRE, Tina Stacy, Hassan Golestanian and Earl Joe Charlson, University of Missouri-Columbia, Department of Electrical Engineering, Columbia, MO.

4:45 P.M. E8.12
THEORY AND REALIZATION OF A TWO-LAYER HALL EFFECT MEASUREMENT CONCEPT FOR CHARACTERIZATION OF EPITAXIAL AND IMPLANTED LAYERS OF SiC, Adolf Schöner, Kurt H. Rottner, Nils Nordell, IMC, Kista, Sweden.

PANEL DISCUSSION
Wednesday Evening, April 10
5:00 - 7:00 P.M.
Marina A/B


SESSION E10: DEVICE TECHNOLOGIES III
Chairs: Steven Binari and Paul Chow
Thursday Morning, April 11
Presidio Ballroom

8:30 A.M. E10.1
THEORETICAL PREDICTION OF ZINC BLENDE PHASE GaN AVALANCHE PHOTODIODE PERFORMANCE BASED ON NUMERICALLY CALCULATED ELECTRON AND HOLE IMPACT IONIZATION RATE RATIO, Kevin Brennan, Jan Kolnik, Ismail Oguzman, Georgia Tech, School of Electrical Engineering, Atlanta, GA; Rongping Wang and Paul Ruden, University of Minnesota, Department of Electrical Engineering, Minneapolis, MN.

8:45 A.M. E10.2
OBIC MEASUREMENTS ON 6H SiC SCHOTTKY DIODES, Kurt H. Rottner, Adolf Schöner, IMC, Kista, Sweden; Manfred Frischholz and Reinhard Helbig, University of Erlangen, Institute of Applied Physics, Erlangen, Germany.

9:00 A.M. E10.3
DEFECT DOMINANT JUNCTION CHARACTERISTICS OF 4H-SiC p⁺-n DIODES, Jim Scofield, Wright Laboratory, Wright-Patterson AFB, OH; Mike Dunn, Air Force Institute of Technology, Department of Engineering Physics, Wright-Patterson AFB, OH; Kitt Reinhardt, Wright Laboratory, Wright-Patterson AFB, OH; Yung Kee Yeo and Robert Hengehold, Air Force Institute of Technology, Department of Engineering Physics, Wright-Patterson AFB, OH.

9:15 A.M. E10.4
FABRICATION OF HIGHLY ORIENTED, SMOOTH DIAMOND FILMS ON SILICON FOR ELECTRONIC DEVICES, T.H. Borst, S.D. Wolter, P. Gluche and E. Kohm, University of Ulm, Department of Electronic Devices and Circuits, Ulm, Germany.

9:30 A.M. E10.5
OPTICAL PROPERTIES OF GaN-BASED STRUCTURES UNDER HIGH EXCITATION LEVEL, V.I. Nikolaev, A.S. Zubrilov, D.V. Tsvetkov, Cree Research Eed and A.F. Ioffe Institute, St. Petersburg, Russia; V.A. Dmitriev, K.G. Irvine and C.H. Carter Jr., Cree Research Inc., Durham, NC.

9:45 A.M. E10.6
RADIATIVE RECOMBINATION RATES IN GaN, InN and AlN AND THEIR SOLID SOLUTIONS, Alexey V. Dmitriev and Alexander L. OruzheinikovM.V. Lomonosov Moscow State University, the Faculty of Physics, Department of Low Temperature Physics, Moscow, Russia.

10:00 A.M. BREAK

10:30 A.M. E10.7
PIEZOELECTRIC AND PYROELECTRIC SENSING ELEMENTS BASED ON WURTZITE GALLIUM NITRIDE, A.D. Bykhovski, University of Virginia, Department of Electrical Engineering, Charlottesville, VA; V.V. Kaminski, Ioffe Physico-Technical Institute, St. Petersburg, Russia; M.S. Shur, University of Virginia, Department of Electrical Engineering, Charlottesville, VA; and M.A. Khan, APA Optics Inc., Blaine, MN.

10:45 A.M. E10.8
CVD DIAMOND WIRES AS X-RAY DETECTORS, C. Manfredotti, F. Fizzotti, P. Polesello and E. Vittone, University of Torino, Italy, Experimental Physics Department, Torino, Italy, and National Institute for Matter Physics, Torino, Italy.

11:00 A.M. E10.9
FABRICATION OF AlxGa1-xN/GaN STRAINED LAYER QUANTUM WELL STRUCTURES AND THEIR APPLICATION TO OPTICAL DEVICES, Kyu-Hwan Shim, Jae-Min Myoung, University of Illinois, Department of Materials Science and Engineering, Urbana, IL; Oleg V. Gluschenkov, University of Illinois, Department of Electrical and Computer Engineering, Urbana, IL; Chinkyo Kim, University of Illinois, Department of Physics; Urbana, IL; Kevin Kim, University of Illinois, Department of Electrical and Computer Engineering, Urbana, IL; Ian Robinson, University of Illinois, Urbana, IL; and Myung-Cheo Yoo, Samsung Advanced Institute of Technology, Suwon, Korea.

11:15 A.M. E10.10
CRITICAL MATERIALS, DEVICE DESIGN, PERFORMANCE AND RELIABILITY ISSUES IN 4H-SIC POWER UMOSFET STRUCTURES, A.K. Agarwal and R.R. Siergiej, Westinghouse Science and Technology Center, Microelectronics Department, Pittsburgh, PA; M.H. White, Lehigh University, Sherman Fairchild Center, Bethlehem, PA; and P.G. McMullin, A.A. Burk, L.B. Rowland, C.D. Brandt and R.H. Hopkins, Westinghouse Science and Technology Center, Pittsburgh, PA.

11:30 A.M. E10.11
HIGH TEMPERATURE SWITCHING CHARACTERISTICS OF SiC THYRISTOR AT 400deg.C, K. Xie, J.R. Flemish, T. Burke, W.R. Buchwald, US Army Research Laboratory, Physical Science Directorate, Fort Monmouth, NJ.

11:45 A.M. E10.12
CHARACTERIZATION OF 4-H-SiC MOS CAPACITORS BY A FAST-RAMP RESPONSE TECHNIQUE, Tangali S. Sudarshan, Vipin P. Madangarli, George Gradinaru, University of South Carolina, Department of Electrical and Computer Engineering, Columbus, SC; Chin-Chen Tin, Rongxiang Hu and Tamara Issaca-Smith, Auburn University, Department of Physics, AL.

SESSION E11: DEVICE TECHNOLOGIES IV
Chairs: Mario Ghezzo and Mrek Skowronski
Thursday Afternoon, April 11
Presidio Ballroom

1:30 P.M. E11.1
ACTIVATION OF N, Al AND B IMPLANTS IN 4H-SiC, S. Seshadri, A.K. Agarwal, L.B. Rowland, A.A. Burk Jr., G. Augustine, H.M. Hobgood and C.D. Brandt, Westinghouse Science and Technology Center, Department of Microelectronics, Pittsburgh, PA.

1:45 P.M. E11.2
Si ION IMPLANTATION AND ANNEALING OF GaN FOR n-TYPE LAYER FORMATION, Bela Molnar, A.E. Wickenden, Naval Research Laboratory, Washington DC; M.V. Rao, George Mason University, Department of Electrical and Computer Engineering, Fairfax, VA.

2:00 P.M. E11.3
P- AND N-TYPE IMPLANTATION DOPING OF GaN WITH Ca AND O, L.C. Zolper, Sandia National Laboratories, Albuquerque, NM; R.G. Wilson, Hughes Research Laboratory, Malibu, CA; S.J. Pearton, University of Florida, Gainesville, FL; and R.A. Stall, Emcore Corporation, Somerset, NJ.

2:15 P.M. E11.4
ION BEAM SYNTHESIS BY TUNGSTEN IMPLANTATION INTO 6H-SILICON CARBIDE AT ELEVATED TEMPERATURES, H. Weishart, W. Matz and W. Skorupa, Forschungszentrum Rossendorf, Institut für Ionenstrahlphysik und Materialforschung, Dresden, Germany.

2:30 P.M. E11.5
FABRICATION OF BETA SILICON CARBIDE DIODES USING PROTON ISOLATION, Jerome C. Coleman, Gary L. Harris, Howard University, Department of Materials Sciences Research and Computer Engineering, Washington DC; David B. Poker, Oak Ridge National Laboratory, Department of Materials Science, Oak Ridge, TN.

2:45 P.M. BREAK

SESSION E12: CRYSTAL AND FILM GROWTH IV
Chairs: Al Burk Jr. and Kathleen Doverspike

3:15 P.M. E12.1
THERMODYNAMIC ANALYSIS AND GROWTH CHARACTERIZATION OF THICK GaN FILMS GROWN BY CHLORIDE VPE USING GaCl3/N2 AND NH3/N2, Heon Lee, Masaaki Yuri, James Harris Jr. and Tetszo Ueda, Stanford University, Stanford, CA.

3:30 P.M. E12.2
PROPERTIES OF HOMOEPITAXIALLY MBE-GROWN GaN, T. Suski, Z. Liliental-Weber, A. Gassmann, N. Newman, E. Jones, L. Schloss, C. Kisielowski, J. Krueger, M. Rubin, E.R. Weber, Lawrence Berkeley Laboratory, Berkeley, CA; I. Grzegory, M. Bockowski, J. Jun and S. Porowski, UNIPRESS, Research Center, PAS, Warszawa, Poland.

3:45 P.M. E12.3
NUCLEATION AND GROWTH OF DIAMOND ON NICKEL AND COBALT SUBSTRATES, Z. Sitar, P.C. Yang, W. Liu, North Carolina State University, Department of Materials Science and Engineering, Raleigh, NC; J.T. Prater, Army Research Office, Research Triangle Park, NC; J.T. Glass, Kobe Steel USA, Electronic Materials Center, Research Triangle Park, NC; and R.F. Davis, North Carolina State University, Department of Materials Science and Engineering, Raleigh, NC.

4:00 P.M. E12.4
LATTICE-MATCHED InAsN(X=0.38) ON GaAs GROWN BY MOLECULAR BEAM EPITAXY, Y.C. Kao, T.P.E. Broekaert, H.Y. Liu and S. Tang, Texas Instruments, Dallas, TX.

4:15 P.M. E12.5
KINETICS OF THE GROWTH OF GaN BY MOLECULAR BEAM EPITAXY, D.E. Crawford, R. Held, A.M. Johnston, A.M. Dabiran and P.I. Cohen, University of Minnesota, Department of Electrical Engineering, Minneapolis, MN.

4:30 P.M. E12.6
GROWTH AND CHARACTERIZATION OF AlInGaN/InGaN HETEROSTRUCTURES, J.C. Roberts, K.S. Boutros, F.G. McIntosh, E.L. Piner, Y.W. He, N.A. El-Masry and S.M. Bedair, North Carolina State University, Department of Materials Science and Engineering, Raleigh, NC.

4:45 P.M. E12.7
THE EFFECT OF GROWTH PARAMETERS ON THE QUALITY OF GALLIUM NITRIDE THICK FILMS GROWN BY HYDRIDE VAPOR PHASE EPITAXY, R.L. Molnar and E. Brown, Massachusetts Institute of Technology, Lincoln Laboratory, Lexington, MA; W. Götz, L.T. Romano and N.M. Johnson, Xerox Palo Alto Research Center, Palo Alto, CA.

SESSION E13: CRYSTAL AND FILM GROWTH V
Chairs: Steve DenBaars and Roy Clarke
Friday Morning, April 12
Presidio Ballroom

8:30 A.M. E13.1
EFFECT OF Si-DOPING ON THE STRUCTURE OF GaN GROWN BY MOVPE ON (110) Al2O3, Z. Liliental-Weber, S. Ruvimov, T. Suski, J.W. Ager III, W. Swider, J. Washburn, Lawrence Berkeley Laboratory, Berkeley, CA; and I. Akasaki, Meijo University, Nagoya, Japan.

8:45 A.M. E13.2
ATOMIC FORCE MICROSCOPY STUDY OF GaN BUFFER LAYERS ON SiC(0001)BY MOCVD, Dongsup Lim, Korea University, Department of Materials Science and Technology, Seoul, Korea; Dongjin Byun, Korea Institute of Science and Technology, Department Division of Metals, Seoul, Korea; Kyeongho Kim, Korea Institute of Science and Technology, Department Division of Ceramics, Seoul, Korea; Ji-Beom Yoo, Sung Kyun Kwan University, Department of Materials Engineering, Suwon, Korea; OkHyun Nam, Korea Institute of Science and Technology, Department Division of Metals, Seoul, Korea; In-Hoon Choi, Korea University, Department of Materials Science and Engineering, Seoul, Korea; Dalkeun Park, Korea Institute of Science and Technology, Department Division of Chemical Engineering, Seoul, Korea; and Dong-Wha Kum, Korea Institute of Science and Technology, Department Division of Metals, Seoul, Korea.

9:00 A.M. E13.3
DOPANT INCORPORATION EFFICIENCIES ON (1100)-FACE GROWTH OF SiC, Naohiro Suglyama, Atsuto Okamoto, Toshihiko Tani and Nobuo Kamiya, Toyota Central R&D Laboratories, Inc., Aichi, Japan.

9:15 A.M. E13.4
Philippe Vermaut, Pierre Ruterana, Gerard Nouet, LERMAT, ISMRA, Caen, France; and Hadin Morkog, University of Illinois, Urbana, IL.

9:30 A.M. E13.5
ORIGIN OF HIGH-CONDUCTIVITY LAYER NEAR THE SURFACE IN AS-GROWN DIAMOND FILMS PREPARED BY CHEMICAL VAPOR DEPOSITION, Sadanori Yamanaka, Electrotechnical Laboratory, Materials Science Division, Ibaraki, Japan, and University of Tsukuba, Faculty of Materials Science, Ibaraki, Japan; Kazushi Hayashi, Hideo Okushi, Electrotechnical Laboratory, Materials Science Division, Ibaraki, Japan; and Koji Kajimura, Electrotechnical Laboratory, Materials Science Division, Ibaraki, Japan, and University of Tsukuba, Faculty of Materials Science, Ibaraki, Japan.

9:45 A.M. E13.6
THE EFFECTS OF CARRIER CONCENTRATION AND STRAIN ON THE TEMPERATURE DEPENDENCE OF ENERGY GAP IN GAN FILM GROWN BY MOCVD, Y. Li, Y. Lu, Rutgers University, Department of Electrical and Computer Engineering, Piscataway, NJ; H. Shen, U.S. Army Research Laboratory, NJ; M. Schurman, T. Salagai and R. Stall, EMCORE Corporation, Somerset, NJ.

10:00 A.M. E13.7
LATERAL GROWTH ORIGINATED FROM REENTRANT CORNER FORMED BY TWINNING IN THICK DIAMOND FILM, San Yu, Haiping Sun, Zhigang Jiang, Dougmci Li, Lin Liu, Zengsum Jin, Guantian Zou, Jilin University, State Key Lab for Superhard Materials, Changehn, China.

10:15 A.M. BREAK

SESSION E14: DEFECTS, DOPANTS AND
CHARACTERIZATION III
Chairs: Weida Qian and Pehr Pehrsson

10:45 A.M. E14.1
A STUDY OF ELECTROLUMINESCENT EMISSION IN CVD DIAMOND, C. Manfredotti, F. Fizzotti, P. Polesello and F. Wang, University of Torino, Italy, Experimental Physics Department, Torino, Italy, and National Institute for Matter Physics, Torino, Italy.

11:00 A.M. E14.2
HIGH SPATIAL RESOLUTION PHOTOLUMINESCENCE MEASUREMENTS OF GaN BY NEAR-FIELD SCANNING OPTICAL MICROSCOPY, Jutong Liu, N.R. Perkins, M.N. Horton, University of Wisconsin, Materials Research Group, Madison, WI; J.M. Redwing, M.A. Tischler, Advanced Technology Materials Inc., Danbury, CT; and T.F. Kuech, University of Wisconsin, Materials Research Group, Madison, WI.

11:15 A.M. E14.3
CATHODOLUMINESCENCE STUDIES OF BOUND EXCITONS AND NEAR BANDGAP EMISSION LINES IN B- AND P- DOPED CVD-DIAMONDS, Hadwig Sternschulte, Toni Albrecht, Klaus Thonke and Rolf Sauer, Universitaet Ulm, Abteilung Halbleiterphysik, Ulm, Germany.

11:30 A.M. E14.4
DIFFUSION OF HYDROGEN IN 6H SILICON CARBIDE, M.K. Linnarsson, J.P. Doyle and B.G. Svensson, Royal Institute of technology, Solid State Electronics, Kista-Stockholm, Sweden.

11:45 A.M. E14.5
SURFACE PHOTOVOLTAGE EFFECTS IN PHOTOEMISSION FROM (111) DIAMOND SURFACES, Bradford B. Pate and Christos Bandis, Washington State University, Department of Physics, Pullman, WA.

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See page 6 for a complete list of exhibitors.