Meetings & Events

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1996 MRS Spring Meeting & Exhibit

April 8-12, 1996 | San Francisco
Meeting Chairs
: Thomas F. Kuech, Clifford L. Renschler, Chuang Chuang Tsai



Symposium G: Semiconductors on Insulators—Fundamentals and Technology

Chairs

Harry A. Atwater, Calfornia Institute of Technology
James Comfort, IBM T.J. Watson Research Center
Takao Yonehara, Canon R&D Center


*Invited Paper

SESSION G1: BONDING TECHNIQUES
Chair: J. Comfort
Tuesday Morning, April 9
Pacific J - 4th floor
8:30 A.M. *G1.1
SEMICONDUCTOR WAFER BONDING, Ulrich M. Goesele, Max-Planck-Institute of Microstructure Physics, Halle, Germany.

9:00 A.M. G1.2
INFRARED SPECTROSCOPY AS A PROBE OF THE FUNDAMENTAL PROCESSES OCCURRING AT THE INTERFACES OF BONDED SILICON WAFERS, M.K. Weldon, Y.J. Chabal, S.B. Christman, E.E. Chaban, C.A. Goodwin and L.C. Feldman, AT&T Bell Laboratories, Murray Hill, NJ.

9:15 A.M. *G1.3
WAFER-BONDED SOI PROCESSES AND MANUFACTURING CHALLANGES, Philip Pitner, IBM Corporation, SiBond LLC, Hopewell Junction, NY.

9:45 A.M. G1.4
ELLIPSOMETRIC STUDY OF SILICON ON INSULATOR (SOI) MATERIAL, S.A. Alterovitz, NASA Lewis Research Center, Cleveland, OH; E.T. Croke, Hughes Research Laboratories, Malibu, CA; and S.S. Iyer, SiBond, Hopewell Junction, NY.

10:00 A.M. *G1.5
EPITAXIAL LAYER TRANSFER BY BOND AND ETCH-BACK OF POROUS Si, K. Sakaguchi, N. Sato and T. Yonehara, Canon Inc., Device Development Center, Tamura, Japan.

10:30 A.M. BREAK

10:45 A.M. G1.6
PLASMA JET ETCHING FOR RAPID SOI THINNING, L. David Bollinger, Oleg Siniaguine and Iskander Tokmouline, Hughes Danbury Optical Systems, Danbury, CT.

11:00 A.M. *G1.7
PHYSICAL ASPECTS OF THE SMART-CUT PROCESS, Michel Bruel, Bernard Aspar, Thierry Poumeyrol, LETI-CEA, Departement de Microtechnologies, Grenoble, France; Alain Claverie, CNRS/CEMES, Toulouse, France; and André Auberton, SOITEC, Grenoble, France.

11:30 A.M. G1.8
SILICON ON INSULATOR LAYERS FORMED BY POROUS SILICON PRODUCED BY HELIUM IMPLANTATION AND ANNEALING, V. Raineri and S.U. Campisano, CNR-IMETEM, Catania, Italy.

11:45 A.M. G1.9
ELECTRICAL CHARACTERIZATION OF VACUUM BONDED Si P-N JUNCTIONS, Karl D. Hobart, Fritz J. Kub, Naval Research Laboratory, Washington DC; and Cynthia A. Desmond, California State University, Department of Electrical Engineering, Sacramento, CA.

SESSION G2: SIMOX
Chair: T. Yonehara
Tuesday Afternoon, April 9
Pacific J - 4th floor

1:30 P.M. *G2.1
HIGH-QUALITY LOW-DOSE SIMOX WAFERS, Sadao Nakashima, NTT, LSI Laboratories, Atsugi, Japan.

2:00 P.M. *G2.2
SYNTHESIS OF SIMOX STRUCTURE USING PLASMA IMMERSION ION IMPLANTATION, Nathan W. Cheung, University of California, Berkeley, Department of Electrical Engineering and Computer Science, Berkeley, CA.

2:30 P.M. G2.3
PARAMAGNETIC INTERFACE TRAPS IN HIGH-TEMPERATURE ANNEALED Si/SiO2/Si STRUCTURES, K. Vanheusden, W.L. Warren, J.R. Schwank, D.M. Fleetwood, M.R. Shaneyfelt and P.S. Winokur, Sandia National Laboratories, Albuquerque, NM; R.A.B. Devine, CNET-France Télécom, Meylan, France.

2:45 P.M. G2.4
STRUCTURAL PROPERTIES OF SILICON ON INSULATOR STRUCTURES, Marco Beghi, Carlo Bottani and Giorgio Ghislotti, Politecnico Di Milano, Nuclear Engineering Department, Milano, Italy.

3:00 P.M. G2.5
EVALUATION OF THE DEPTH PROFILE OF DEFECTS IN SIMOX, A. Ogura, T. Tatsumi, NEC Corporation, Microelectronics Resesearch Laboratories, Ibaraki, Japan; T. Hamajima and H. Kikuchi, NEC Corporation, ULSI Device Development Laboratories, Ibaraki, Japan.

3:15 P.M. BREAK

3:30 P.M. G2.6
MICROSTRUCTURAL CHANGES IN SIMOX AS A FUNCTION OF VARYING THE DECOUPLED PARAMETERS OF IMPLANT ENERGY, CURRENT AND TEMPERATURE, R. Datta, University of Florida, Department of Materials Science and Engineering, Gainesville, FL; L.P. Allen, Ibis Technology Corporation, Danvers, MA; V. Krishnamoorthy and K.S. Johns, University of Florida, Department of Materials Science and Engineering, Gainesville FL.

3:45 P.M. G2.7
INVESTIGATION OF DEFECTS IN SOI MATERIALS AND BULK SILICON USING EBIC, Guenole C.M. Silvestre, Trinity College Dublin, Department of Electronics and Electrical Engineering, Dublin, Ireland.

4:00 P.M. G2.8
MOSFETS WITH SILICON QUANTUM WIRES CHANNEL ON SIMOX SUBSTRATE, Shulin Gu, Youdou Zheng, Nanjing University, Physics Department, Jiangsu, China.

SESSION G3: POLYCRYSTALLINE FILMS
Chair: H.A. Atwater
Wednesday Morning, April 10
Pacific J - 4th floor

8:30 A.M. *G3.1
LASER CRYSTALLIZATION OF POLYSILICON THIN FILMS GRAIN GROWTH AND DEVICE FABRICATION, J.BN. Boyce, D.K. Fork, P. Mel, G.B. Anderson and R.I. Johnson, Xerox Palo Alto Research Center, Electronic Materials Laboratory, Palo Alto, CA.

9:00 A.M. *G3.2
EXCIMER LASER CRYSTALLIZATION OF Si FILMS, James S. Im, Columbia University, Department of Chemical Engineering, Materials Science and Mining Engineering, HKSM, New York, NY.

9:30 A.M. G3.3
STRUCTURE OF RAPID THERMALLY ANNEALED PLYCRYSTALLINE SILICON FILMS BY A GAS FLAMES, W-F Qu, T. Komori, K. Takamoto, Y. Masaki, A. Kitagawa and M. Suzuki, Kanazawa University, Department of Electrical and Computer Engineering, Kanazawa, Japan.

9:45 A.M. G3.4
PULSE RATE DEPENDENCE OF MULTIPLE SHOT EXCIMER LASER CRYSTALLIZED AMORPHOUS SILICON THIN FILMS, R.I. Johnson, G.B. Anderson, J.B. Boyce, D.K. Fork and P. Mei, Xerox Palo Alto Research Center, Palo Alto, CA.

10:00 A.M. G3.5
CAPPING LAYER EFFECT ON UNIFORMITY OF EXCIMER LASER CRYSTALLIZED POLY-Si THIN FILM TRANSISTORS, Hiroshi Tanabe, Hiroshi Okumura, Katsuhisa Yuda, Kenji Sera and Fujio Okumura, NEC Corporation, Functional Devices Research Laboratories, Kawasaki, Japan.

10:15 A.M. G3.6
GRAIN SIZE AND LOCATION CONTROL IN CRYSTALLIZING Ge THIN FILMS ON SiO2 VIA METAL MEDIATED SELECTIVE NUCLEATION AND DOPANT ENHANCED SOLID PHASE EPITAXY, Chih M. Yang, Harry A. Atwater, California Institute of Technology, Passadena, CA.

10:30 A.M. BREAK

10:45 A.M. *G3.7
POLYCRYSTALLINE THIN FILM-FORMATION AND ITS APPLICATION FOR TFT'S, Takashi Noguchi, Sony Corporation Semiconductor Company, LCD Department, Atsugi-shi, Japan.

11:15 A.M. G3.8
CAPILLARY WAVES IN PULSED EXCIMER LASER CRYSTALLIZED AMORPHOUS SILICON, D.K. Fork, G.B. Anderson, J.B. Boyce, R.I. Johnson and P. Mei, Xerox Palo Research Center, Palo Alto, CA.

11:30 A.M. G3.9
GROWTH OF HIGH QUALITY POLY-SiGe ON GLASS SUBSTRATES, Koichirou Minami, Masaji Yamamoto and Jun-ichi Hanna, Imaging Science and Engineering Laboratory, Tokyo Institute of Technology, Yokohama, Japan.

11:45 A.M. G3.10
LATENT HEAT AND TIME-DEPENDENT NUCLEATION EFFECTS IN PULSED-LASER MELTED SILICON FILMS, V.A. Shneidman, University of Arizona, Department of Materials Science and Engineering, Tucson, AZ.

SESSION G4: NOVEL APPROACHES AND MATERIALS
Chair: J.S. Im
Wednesday Afternoon, April 10
Pacific J - 4th floor

1:30 P.M. *G4.1
APPLICATION-SPECIFIC TAILORING OF HETEROEPITOXICAL SILICON, G.W. Cullen and M.T. Duffy, David Sarnoff Research, Princeton, NJ.

2:00 P.M. G4.2
THERMALLY INDUCED MECHANICAL STRESS IN SILICON ON SAPPHIRE (SOS) BY WAFER BONDING, P. Kopperschmidt, G. Kästner and U. Gösele, Max Planck Institute of Microstructure Physics, Weinberg, Germany.

2:15 P.M. *G4.3
Yablonovitch,

2:45 P.M. G4.4
FABRICATION AND MICROWAVE PERFORMANCE OF SEMI-INSULATING SILICON, Stephen A. Campbell and Jay F. Mayer, University of Minnesota, Department of Electrical Engineering, Minneapolis, MN.

3:00 P.M. BREAK

3:15 P.M. G4.5
FULL-WATER SOI SUBSTRATE FABRICATION BY CVD Si ON PS-ON-INSULATOR STRUCTURE, C.H. Lee, C.C. Yeh and Klaus Y.J. Hsu, National Tsing Hua University, Department of Electrical Engineering, Semiconductor Technology and Applications Research Group, Hsinchu, Taiwan.

3:30 P.M. G4.6
OPTICAL ANALYSIS OF ELECTRON BEAM MODIFICATION OF CaF2 SURFACE FOR HETEROEPITAXIAL GROWTH OF GaAs CaF2/Si SOI STRUCTURE, Koji Kawasaki, Kazuo Tsutsui and Manabu Tomisaka, Tokyo Institute of Technology, Department of Applied Electronics, Yokohama, Japan.

3:45 P.M. G4.7
LOW DEFECT SILICON-ON-INSULATOR MATERIAL BY SELECTIVE EPITAXIAL GROWTH OF SILICON, Gerold Neudeck, John Denton, Purdue University, Department of Electrical and Computer Engineering, Lafayette, IN; John Sherman, Intel, Rio Rancho, NM; and William Fultz, Delco Electronics, Fab III. M/S FAB-A, Kokomo, IN.

4:00 P.M. G4.8
A PROTON-IMPLANTED DOPING METHOD TO PRODUCE P-TYPE LAYER ON N-TYPE SILICON SUBSTRATE, Jianming Li, K.W. Jones, Brookhaven National Laboratory, Upton, NY; and J.H. Coleman, Plasma Physics Corporation, Locust Valley, NY.

The following exhibitors have identified their products and services as directly related to your research:

Academic Press
American Institute of Physics
Elsevier Science, Inc.
Charles Evans & Associates
Heraeus Amersil, Inc.
Ion Tech, Inc.
IOP Publishing, Inc.
Kluwer Academic Publishers
Lake Shore Cryotronics, Inc.
Kurt J. Lesker Co.
LUXTRON Corporation
MDC Vacuum Products Corp.
MMR Technologies, Inc.
n & k Technology, Inc.
Omicron Associates
Oxford Applied Research
Philips Semiconductors/Materials Analysis Group
Research & PVD Materials Corp.
Thermionics Laboratory, Inc.
Union Carbide Crystal Products
Virginia Semiconductor, Inc.

See page 6 for a complete list of exhibitors.