Chairs

David Ginley, NREL
Chris Eberspacher, Unisun
Tony Catalano, NREL
Terry M. Peterson, EPRI
Hans W. Schock, Institut fur Physikalische Elektronik
Takahiro Wada, Matsushita Electric Ind. Co. Ltd.

Symposium Support

Corning, Inc.
Electric Power Research Institute
Exxon
National Renewable Energy Laboratory
Siemens Solar Industries

Related Symposia: A: AMORPHOUS SILICON TECHNOLOGY - 1996; AND, H: FLAT PANEL DISPLAY MATERIALS

*Invited Paper

SESSION JI: THIN-FILM SPECTRUM
Chair: Tony Catalano
Monday Morning, April 8
Golden Gate C2

8:30 A.M. *J1.1
ATOMIC-LEVEL CONTROL IN THE GROWTH OF NEW MATERIALS UNDER HIGHLY KINETICALLY CONSTRAINED CONDITIONS, Joe Greene, University of Illinois, Materials Science Department, Urbana, IL.

9:00 A.M. *J1.2
THE PERFORMANCE OF Cu(In,Ga)Se2-BASED SOLAR CELLS IN CONCENTRATOR APPLICATIONS, J.R. Tuttle, J.S. Ward, T.A. Berens, A. Duda, M.A. Contreras, K.R. Ramanathan, A.L. Tennant, J. Keane, E.D. Cole and R. Noufi, National Renewable Energy Laboratory, Golden, CO.

9:30 A.M. *J1.3
ON-LINE TCO-IMPLICATIONS FOR THE PV INDUSTRY, Peter F. Gerhardinger, Libbey-Owens-Ford Corporation, Toldeo, OH.

10:00 A.M. BREAK

SESSION J2: WINDOW LAYERS I
Chair: John R. Tuttle

Related Symposium: H: FLAT PANEL DISPLAY MATERIALS

10:30 A.M. *J2.1
THE COMPARISON BETWEEN b- AND Al-DOPED ZnO WINDOW LAYERS IN PHOTOVOLTAIC PROPERTIES OF CIS THIN FILM SOLAR CELLS, Tokio Nakada, Naoki Murakami and Akio Kunioka, Aoyama Gakuin University, Department of Electrical Engineering and Electronics, Tokyo, Japan.

11:00 A.M. *J2.2
PREPARATION AND PROPERTIES OF TRANSPARENT CONDUCTORS, Roy G. Gordon, Harvard University, Department of Chemistry, Cambridge, MA.

11:30 A.M. J2.3
ANOMALOUS BEHAVIOR IN THE ABSORPTION EDGE SHIFT IN Al-DOPED ZnO FILMS ON GLASS, V. Srikant and D.R. Clarke, University of California, Santa Barbara, Materials Department, Santa Barbara, CA.

11:45 A.M. J2.4
STRUCTURE EFFECT ON ELECTRICAL PROPERTIES OF ITO FILMS PREPARED BY RF REACTIVE MAGNETRON SPUTTERING, Li-Jian Meng, Instituto Superior de Engenharia do Porto, Departamento de Física, Porto, Portugal.


JOINT SESSION J3/A1: AMORPHOUS FILMS
Chairs: P.Craig Taylor and Liyou Yang
Monday Afternoon, April 8
Golden Gate C2

1:30 P.M. *J3.1/A1.1
TECHNOLOGICAL DEVELOPMENT FOR COMMERCIALIZATION OF a-Si:H BASED MULTIJUNCTION MODULES, Liyou Yang, M. Bennett, L. Chen, K. Jansen, Y. Li, J. Newton, K. Rajan, F. Willing, R. Arya and D. Carlson, Solarex, A Business Unit of Amoco/Enron Solar, Newtown, PA.

2:00 P.M. J3.2/A1.2
INHIBITION OF METAL INDUCED CRYSTALLIZATION IN THE SYSTEM Ag/ZnO/a-Si:H, F. Edelman, R. Brener, C. Cytermann, R. Weil, Solid State Institute, Technion-israel Institute of Technology, Haifa, Israel, C. Beneking and W. Beyer, Institut für Schicht-und Ionentechnik, Forschungszentrum, Jülich, Jülich, Germany.

2:15 P.M. J3.3/A1.3
MEASURED AND SIMULATED TEMPERATURE DEPENDENCE OF A-Si:H SOLAR CELL PARAMETERS, Th. Eickhoff, H. Stiebig, W. Reetz, C. Beneking and H. Wagner, Forschungszentrum Jülich GmbH, Jülich, Germany.

2:30 P.M. J3.4/A1.4
IMPROVEMENT OF THE ITO-P INTERFACE IN a-Si:H SOLAR CELLS USING A THIN SiO INTERMEDIATE LAYER, C.N. Carvalho, I. Ferreira, E. Fortunato and R. Martins, FCT-UNL/CEMOP-UNINOVA, Monte de Caparica, Portugal.

2:45 P.M. J3.5/A1.5
THE STABILITY IMPROVEMENT OF a-Si:H FILMS FOR PHOTOTVOLTAIC APPLICATIONS, Boris G. Budaguan, Arcady A. Aivazov and Mark N. Meytin, Moscow Institute of Electronic Technology Department of Microtechnology, Moscow, Russia.

3:00 P.M. BREAK

3:30 P.M. *J3.6/A1.6
THE POTENTIAL OF HYDROGENATED AMORPHOUS SILICON-SULFUR ALLOYS FOR ABSORBER MATERIALS IN PHOTOVOLTAIC DEVICES, Craig P. Taylor, University of Utah, Department of Physics, Salt Lake City, UT.

4:00 P.M. J3.7/A1.7
a-Si:H FILMS FROM DICHLOROSILANE: DEPOSITION SPACE AND FILM PROPERTIES, A.M. Payne and S. Wagner, Princeton University, Princeton, NJ.

4:15 P.M. J3.8/A1.8
A SIMPLE OPTICAL PROPERTIES MODELING OF MICROCRYSTALLINE SILICON BY EFFECTIVE MEDIUM APPROXIMATION METHOD, Woo Yeong Cho, Koeng Su Lim, KAIST, Department of Electrical Engineering, Taejon, Korea; and Hyun Mo Cho, KRISS, Department of Optics Laboratory, Taejon, Korea.

4:30 P.M. J3.9/A1.9
PRESSURE CONTROLLED mc TO AMORPHOUS TRANSITION IN HOT-WIRE THIN FILMS, E. Terzini, C. Minarini, G. Fameli, V. Barbarossa, R. Polini, G. Mattei and A. Eray, ENEA, Energy a-Si Division, Portici, Italy.

4:45 P.M. J3.10/A1.10
NANO-SCALE RESOLVED DETECTION OF PHOTO-CURRENT IN a-Si:H FILMS, Takashi Koida, Masashi Kawasaki, Mitsutaka Matsuse and Hidcomi Koinuma, Tokyo Institute of Technology, Research Laboratory of Engineering Materials, Yokohama, Japan

SESSION J4: NOVEL CONCEPTS I
Chair: Thomas Walter
Tuesday Morning, April 9
Golden Gate C3

8:30 A.M. J4.1
A LEARNING CURVE APPROACH TO PROJECTING COST AND PERFORMANCE IN THIN FILM PHOTOVOLTAICS, George D. Cody, Exxon Corporate Research, Annandale, NJ; and Thomas Tiedje, University of British Columbia, Department of Physics, Vancouver, Canada.

8:45 A.M. J4.2
SEMICONDUCTOR SEPTUM ELECTROCHEMICAL PHOTOVOLTAIC CELL, A.L. Ottova, Michigan State University, Membrane Biophysics Laboratory, East Lansing, MI; Pengcheng Ren, Wenxiu Luo, Zhongke Tan, Qingdao Institute of Chemical Technology, Qingdao, China; and H. Ti Tien, Michigan State University, Membrane Biophysics Laboratory, East Lansing, MI.

9:00 A.M. J4.3
POLYMER PHOTOVOLTAIC CELLS MADE WITH DONOR-ACCEPTOR COMPOSITES: ENHANCED CARRIER COLLECTION EFFICIENCY VIA A NETWORK OF INTERNAL HETEROJUNCTIONS, G. Yu, J. Gao, J.C. Hummelen, F. Wudl and A.J. Heeger, University of California, Santa Barbara, Institute for Polymers and Organic Solids, Santa Barbara, CA.

9:15 A.M. J4.4
HETEROGENEOUS SEMICONDUCTOR FILMS FOR PHOTO-ELECTRICAL APPLICATIONS, R. Könenkamp, Hahn-Meitner Institut, Berlin, Germany.

9:30 A.M. J4.5
OPTIMIZATION OF POROUS Si REFLECTANCE FOR SOLAR CELL APPLICATIONS, Antoinette X. Coles, Rosario Gerhardt and Ajeet Rohatgi, Georgia Institute of Technology, Atlanta, GA.

9:45 A.M. J4.6
MONOGRAIN POWDERS AND LAYERS FOR PHOTOVOLTAIC APPLICATION, Mare Altosaar, Enn Mellikov, Tallinn Technical University, Institute of Materials Technology, Tallinn, Estonia; Dieter Meissner, Institute für Energieverfahrenstechnik (IEV), Forschungszentrum Jülich GmbH (KFA), Jülich, Germany; Jaan Hiie and Tiit Varema, Tallinn Technical University, Institute of Materials Technology, Tallinn, Estonia.

10:00 A.M. BREAK

SESSION J5: CHALCOPYRITE FILMS I
Chair: Shigeru Niki

10:30 A.M. *J5.1
DEVELOPMENT OF Cu(InGa)Se2 THIN FILM SOLAR CELLS WITH Cd-FREE BUFFER LAYERS, Makoto Konagai and Yasutoshi Ohtake, Tokyo Institute of Technology, Department of Electrical and Electronic Engineering, Tokyo, Japan.

11:00 A.M. *J5.2
ADVANCED STACKED ELEMENTAL LAYER PROCESS FOR Cu(In,Ga)Se2 THIN FILM PHOTOVOLTAIC DEVICES, V. Probst, Siemens AG, Corporate Research and Development, München, Germany; F. Karg, Siemens Solar GmbH, München, Germany; J. Rimmasch, W. Riedl, W. Stetter and H. Harms, Siemens AG, Corporate Research and Development, München, Germany.

11:30 A.M. J5.3
FORMATION CHEMISTRY OF POLYCRYSTALLINE Cu(InGa)Se2 THIN-FILM ABSORBERS PREPARED BY SELENIZATION OF Cu-Ga/In STACKED PRECURSOR LAYERS WITH H2Se GAS, Katsumi Kushiya, Satoru Kuriyagawa, Takahisa Kase, Ichirou Sugiyama, Muneyori Tachiyuki and Hiroshi Takeshita, Showa Shell Sekiyu K.K. Central R&D Laboratory, Atsugi City, Japan.

11:45 A.M. J5.4
EFFECTS OF THE Ga CONCENTRATION AND Ga DISTRIBUTION ON JUNCTION DEVELOPMENT IN THIN FILM ZnO/CdS/CuInxGa1-xSe2 PHOTOVOLTAIC DEVICES, Richard J. Matson, Miguel Contreras, James Keane, Amy Franz-Swartzlander, Alice Mason and Rommel Noufi, National Renewable Energy Laboratory, Golden, CO.

SESSION J5: CHALCOPYRITE FILMS I (continued)
Chair: Miguel Contreras
Tuesday Afternoon, April 9
Golden Gate C3

1:30 P.M. *J5.5
CHALLENGES IN USING FLEXIBLE SUBSTRATES FOR THIN-FILM POLYCRYSTALLINE PHOTOVOLTAICS, R.G. Wendt, J.H. Armstrong, M.S. Misra, ITN Energy Systems, Wheat Ridge, CO; T. Gillespie, Lockhead-Martin Astronautics, Denver, CO; F. Jeffrey, Iowa Thin Film Technologies Inc., Ames, IA; R. Birkmire, Institute of Energy Conversion, Newark, DE.

2:00 P.M. J5.6
INVESTIGATION OF ELECTROCHEMICAL PROCESSES IN THE SYNTHESIS AND REMOVAL OF CuInSe2 THIN FILMS, Shalini Menezes, InterPhases Research, Thousand Oaks, CA.

2:15 P.M. J5.7
ENHANCED Mo ADHESION ON GLASS WITH Cr INTERLAYERS FOR COPPER INDIUM DISELENIDE THIN FILM DEVICES, Jeff Alleman, Dave Ginley, Miguel Contreras and Rommel Noufi, National Renewable Energy Laboratory, Golden, CO.

2:30 P.M. J5.8
ELECTRONIC STRUCTURE OF P-TYPE DOPED CuInS2, Tetsuya Yamamoto and Hiroshi Katayama-Yoshida, Tohokvu University, Department of Physics, Sendai, Japan.

2:45 P.M. J5.9
DEPOSITION OF CuInSe2 THIN FILMS BY PULSED ELECTRON BEAM ABLATION, A.M. Andriesh and S.A. Malkov, Academy of Sciences of Moldova, Institute of Applied Physics, Kishinev, Moldova.

3:00 P.M. BREAK
SESSION J6: POLYSILICON FILMS
Chair: Makoto Konagai

3:30 P.M. *J6.1
SILICON PARALLEL MULTILAYER THIN FILM SOLAR CELLS, Martin A. Green, University of New South Wales, Centre for Photovoltaic Devices and Systems, Sydney, Australia.

4:00 P.M. J6.2
POLYCRYSTALLINE SILICON FOR THIN FILM SOLAR CELLS ON GLASS SUBSTRATES, R. Bergmann, J.H. Werner, Max-Planck-Institut für Festkörperforschung, Stuttgart, Germany; G. Oswald and M. Albrecht, Universität Erlangen, Institut für Werkstoffwissenschaften - Mikrocharakterisierung-, Erlangen, Germany.

4:15 P.M. J6.3
ADVANCED THIN, POLYCRYSTALLINE, SILICON-FILM SOLAR CELLS ON LOW-COST SUBTRATES, Robert Hall, Allen Barnett, James Rand, Jeff Cotter and David Ford, Astro Power, Inc., Newark, DE.

4:30 P.M. J6.4
SILICON FILMS DEPOSITED BY LPE ON LOW COST MULTICRYSTALLINE SILICON SUBSTRATES, M. Stemmer, University of Marseilles, Department of Physics, Marseille, France; G. Wagner, IKZ, Berlin, Germany; and S. Martinuzzi, University of Marseilles, Department of Physics, Marseille, France.

SESSION J7: POSTER SESSION I
Chairs: Terry Peterson and Chris Eberspacher
Tuesday Evening, April 9
8:00 P.M.
Presidio Ballroom


J7.1 THE VALENCE BAND TAIL DENSITY OF STATES AND BOND ANGLE DISTORTION IN a-SiNX:H ALLOYS, Boris G. Budaguan, Arcady A. Aivazov and Denis A. Styahiulev, Moscow Institute of Electronic Technology, Department of Microtechnology, Moscow, Russia.

J7.2 PHOTOVOLTAIC EFFECT IN a-Si/c-Si HETEROSTRUCTURE PREPARED BY RF MAGNETRON SPUTTERING TECHNIQUE, Boris G. Budaguan, Alexei A. Sherchenkov and Arcady A. Aivazov, Moscow Institute of Electonic Technology, Department of Microtechnology, Moscow, Russia.

J7.3 SPECTRALLY RESOLVED FILL FACTOR MEASUREMENTS ON A-SI:H BASED SOLAR CELL STRUCTURES, M. Wagner, D. Peros, S. Guse and M. Böhm, Universität-GH Siegen, Institut für Halbleiterelektronik, Siegen, Germany.

J7.4 a-Si/c-Si SOLAR CELLS: EFFECT OF PREPARATION AND PROCESSING TECHNIQUES ON THE PHOTOVOLTAIC PROPERTIES, Wayne Anderson and Basanth Jagannathan, State University of New York at Buffalo, Department of Materials Science and Engineering, Amherst, NY.

J7.5 FTIR AND UV STUDIES OF AMORPHOUS SILICON-BORON ALLOYS DEPOSITED BY LPCVD, G.R. Yang, Rensselaer Polytechnic Institute, Center for Integrated Electronics, Troy, NY; M. Abburi, Rensselaer Polytechnic Institute, Materials Science and Engineering Department, Troy, NY; B.Y. Tong, University of Western Ontario, Center for Chemical Physics, London, Canada.

J7.6 CONTAMINATION PROBLEMS OF AMORPHOUS SILICON N-I-P SOLAR CELLS ON METAL SUBSTRATES, M. Goetz, H. Keppner and A. Shah, Laboratorie de Microtechnique (LMT), Neuchatel, Switzerland.

J7.7 MASS TRANSFER, NUCLEATION AND FILM GROWTH IN EFFUSION EVAPORATION OF CuInSe2, Gennadiy A. Medvedkin, A.F. Ioffe Physico-Technical Institute, St. Petersburg, Russia.

J7.8 DETERMINATION OF THE RECOMBINATION PROCESS IN COPPER TERNARY CHALCOPYRITES BY PHOTOTRANSPORT MEASUREMENTS, Isaac Balberg, Yoram Lubianiker, Hebrew University, Racah Institute, Jerusalem, Israel, Oscar Resto, Zvi Weisz, University of Puerto Rico, Department of Physics, Rio Piedras, PR; Hans Schock, Thomas Walter, University of Stuttgart, Institute of Physics Elektronik, Stuttgart, Germany; and Gaby Biton, Hebrew University, Department of Physics, Jerusalem, Israel.

J7.9 THE EFFECT OF KCN ETCHING ON Cu-RICH EPITAXIAL Cu/InSe2 THIN FILMS, Paul J. Fons, Electrotechnical Laboratory, Photon-Process Section, Ibaraki, Japan; M. Nishitani, Takahiro Wada, Matsushita Electric Industries Company, Ltd., Central Research Laboratories, Ibaraki, Japan; Akimasa Yamada, Shigeru Niki and T. Kurafuji, Electrotechnical Laboratory, Photon-Process Section, Ibaraki, Japan.

J7.10 SYNTHESIS OF THIN FILM CuInSe2 USING MULTILAYER VACUUM EVAPORATION TO AVOID BINARY PHASES, Michael Musialowski and David Johnson, University of Oregon, Chemistry Department, Eugene, OR.

J7.11 CHEMICAL BATH DEPOSITION OF CdS THIN FILMS GROWTH AND STRUCTURAL STUDIES BY COMBINED ALPHA-STEP PROFILOMETRY, ELLIPSOMETRY AND X-RAY DIFFRACTION MEASUREMENTS, Yuming Zhu, Duli Mao and John Trefny, Colorado School of Mines, Department of Physics, Golden, CO.

J7.12 THIN FILMS FOR PHOTOVOLTAIC AND RELATED DEVICE APPLICATIONS, S. Guse, D. Peros, M. Wagner and M. Böhm,, Universität-GH Siegen, Institut für Halbleiterelektronik, Siegen, Germany.

J7.13 INVESTIGATIONS OF SILICON NITRIDE FILMS FOR SILICON SOLAR CELLS, J.R. Elmiger and M. Kunst, Hahn-Meitner-Institut, Berlin, Germany.

J7.14 HYDROGEN TREATMENT OF UNDOPED ZnO FILM USING PHOTOCHEMICAL VAPOR DEPOSITION, Seung Jae Baik, Koeng Su Lim, KAIST, Department of Electrical Engineering, Taejon, Korea; and Jinsoo Song, KIER, Photovoltaic Research Team, Taejon, Korea.

J7.15 OPTICAL INDICES OF PYROLYTIC TIN-OXIDE GLASS, K. von Rottkay and M. Rubin, University of California, Berkeley, Lawrence Berkeley National Laboratory, Berkeley, CA.

J7.16 PHOTOINDUCED REVERSIBLE CONDUCTIVITY AND PHOTOCONDUCTIVITY CHANGES IN TRANSPARENT AMORPHOUS In2O3-xFILMS, P. Stradins, H. Fritzsche and B. Claflin, University of Chicago, James Franck Institute, Chicago, IL.

J7.17 CURRENT SATURATION BEHAVIOR IN TEXTURED POLYCRYSTALLINE ZINC OXIDE FILMS, T. Pompe, V. Srikant and D.R. Clarke, University of California, Santa Barbara, Materials Department, Santa Barbara, CA.

J7.18 ZnO/c-Si HETEROJUNCTION INTERFACE TUNING BY INTERLAYERS, Frank Fenske, Klaus Kliefoth, Lothar Elstner and Burkhard Selle, Hahn-Meitner-Institut Berlin, Department of Photovoltaic, Berlin, Germany.

SESSION J8: CHALCOPYRITE FILMS II
Chairs: Alan Delahoy and Joseph Armstrong
Wednesday Morning, April 10
Golden Gate C3

8:30 A.M. *J8.1
GROWTH AND CHARACTERIZATION OF CuinSe2 EPITAXIAL FILMS FOR DEVICE APPLICATIONS, Shigeru Niki, Takashi Kurafuji, Paul J. Fons, Il Kim and Akimasa Yamada, MITI, Electrotechnical Laboratory, Ibaraki, Japan.

9:00 A.M. *J8.2
DEFECT CHALCOPYRITE Cu(Inx-1Gax)xSe5 POLYCRYSTALLINE THIN-FILM MATERIALS, Miguel A. Contreras, Rick Matson, Holm Wiesner, Andrew Tennant, Kannan Ramanathan and Rommel Noufi, National Renewable Energy Laboratory, Golden, CO.

9:30 A.M. J8.3
CHARACTERIZATION OF COPPER INDIUM DISELENIDE THIN FILMS BY MOLECULAR BEAM DEPOSITION, H.Y. Ueng, D.Y. Chang, National Sun Yat-Sen University, Department of Electrical Engineering, Kaohsiung, Taiwan; and J.L. Jin, Hua Fan College of Humanities and Technology, Department of Electrical Engineering, Taipei, Taiwan.

9:45 A.M. J8.4
EFFECTS OF AIR ANNEALING ON CuInSe2 THIN FILMS GROWN BY MOLECULAR BEAM EPITAXY, I. Kim, S. Niki, P.J. Fons, T. Kurafuji, M. Okutomi and A. Yamada, MITI, Electrotechnical Laboratory, Ibaraki, Japan.

10:00 A.M. BREAK

10:30 A.M. *J8.5
REAL TIME COMPOSITION MONITORING METHODS IN PHYSICAL VAPOR DEPOSITION OF Cu(In,Ga)Se2 THIN FILMS, Takayuki Negami and Takabiro Wada, Matsushita Electric Industrial Corporation Ltd., Central Research Laboratories, Kyoto, Japan.

11:00 A.M. *J8.6
DEFECT DISTRIBUTION AND METASTABILITY IN CHALCO-PYRITE SEMICONDUCTORS, Thomas Walter, Hans Werner Schock and Rainer Herberholz, Universitat Stuttgart, IPE, Stuttgart, Germany.

11:30 A.M. J8.7
SURFACE CHARACTERIZATION OF Cu(In,Ga)Se2 THIN FILMS TREATED BY VARIOUS SOLUTIONS, Takahiro Wada, Yasahiro Hashimoto and Kenji Kusao, Matsushita Electric Ind., Department of Central Research Laboratories, Kyoto, Japan.

11:45 A.M. J8.8
XPS ANALYSIS OF CHEMICALLY TREATED I-III-VI SEMICONDUCTOR SURFACES AND THE RELATION TO II-VI/I-III-VI HETEROJUNCTION FORMATION, Art J. Nelson, C.R. Schwerdtfeger, Migual Contreras, K. Ramanathan and R. Noufi, NREL, Golden, CO.
SESSION J9: WINDOW LAYERS II
Chairs: David C. Wong and Tokio Nakada
Wednesday Afternoon, April 10
Golden Gate C3

Related Symposium: H: FLAT PANEL DISPLAY MATERIALS

1:30 P.M. *J9.1
DEPOSITION SCHEMES FOR LOW COST TRANSPARENT CONDUCTORS FOR PHOTOVOLTAICS, Alan E. Delahoy, Energy Photovoltaics Inc., Princeton, NJ.

2:00 P.M. *J9.2
HIGH PERFORMANCE TRANSPARENT CONDUCTING FILMS OF CADMIUM INDATE PREPARED BY RF SPUTTERING, T.J. Coutts, X. Wu and W.P. Mulligan, National Renewable Energy Laboratory, Golden, CO.

2:30 P.M. J9.3
JET VAPOR DEPOSITION OF TRANSPARENT CONDUCTIVE ZnO:Al THIN FILMS FOR PHTOVOLTAIC APPLICATIONS, Harold Han, J.Z. Zhang, Jet Process Corporation, New Haven, CT; and Joe del Cueto, Lockhead Montia Astronautics, Denver, CO.

2:45 P.M. J9.4
THE GROWTH OF TEXTURED ALUMINUM DOPED ZnO FILMS FOR a-Si SOLAR CELLS BY RF MAGNETRON SPUTTERING AT LOW TEMPERATURE, J.A. Anna Selvan, H. Keppner and A. Shah, Institute de Microtechnique, Universite de Neuchâtel, Institute de Microtechnique, Neuchâtel, Switzerland.

3:00 P.M. BREAK

3:30 P.M. *J9.5
COST IMPACTS OF ANTI-REFLECTIONS COATINGS ON SILICON SOLAR CELLS, David C. Wong and Arthur Waugh, BTU International, North Billerica, MA.

4:00 P.M. J9.6
ALE GROWTH OF TRANSPARENT CONDUCTORS, Mikko Ritala, Timo Asikainen, Markku Leskelä, University of Helsinki, Department of Chemistry, Helsinki, Finland; and Jarmo Skarp, Microchemistry Ltd., Espoo, Finland.

4:15 P.M. J9.7
MORE INSIGHTS IN THE ZnO/a-SiC:H(B) INTERFACE-AN IMPROVED TCO/P CONTACT, Elmar Böhmer, Frank Siebke, Bernd Rech, Claus Beneking and Heribert Wagner, Forschungszentrum Jülich, Jülich, Germany.

4:30 P.M. J9.8
REVERSIBLE CHANGES IN THE ELECTRONIC AND OPTICAL PROPERTIES OF MICROSTRYSTALLINE In2O3-x, B. Pashmakov, Energy Conversion Devices, Troy, MI; H. Fritzsche and B. Claflin, University of Chicago, James Franck Institute, Chicago, IL.

4:45 P.M. J9.9
APPLICATION OF DIAMOND-LIKE CARBON FILMS AS ANTIREFLECTING AND PROTECTIVE COATINGS FOR SILICON SOLAR CELLS, Nickolai I. Klyui and Victor A. Semenovich, Ukraine National Academy of Science, Institute of Semicond Physics, Kiev, Ukraine.

SESSION J10: II-IV FILMS/DEVICES
Chairs: Takayuki Negami and Volker Probst
Thursday Morning, April 11
Golden Gate C3

8:30 A.M. *J10.1
POTENTIAL DEGRADATION MECHANISMS OF CdTe/CdS SOLAR CELLS, Peter Meyers, University of Delaware, Institute of Energy Conversion, Newark DE; and Mowafak Al-Jassim, NREL, Golden CO.

9:00 A.M. J10.2
STUDY OF THIN-FILM CADMIUM SULFIDE/CADMIUM TELLURIDE ALLOYS, Brian McCandless, D. Garth Jensen and Robert Birkmire, University of Delaware, Institution of Energy Conversion, Newark, DE.

9:15 A.M. J10.3
A COMPARATIVE STUDY OF THE DIFFUSION MECHANISMS PRESENT FOR DIFFERENT PROCESSES USED TO TREAT CdS/CdTe SOLAR CELLS IN CHLORIDE AMBIENTS, Dave Albin, Falah Hasoon, Doug Rose, Ramesh Dhere and Peter Sheldon, National Renewable Energy Laboratory, Golden, CO.

9:30 A.M. J10.4
POLYCRYSTALLINE THIN FILM CdTe SOLAR CELLS FABRICATED BY ELECTRODEPOSITION, W. Song, D. Mao, Y. Zhu and J.U. Trefny, Colorado School of Mines, Department of Physics, Golden, CO.

9:45 A.M. J10.5
EFFECTS OF RAPID THERMAL ANNEALING ON CdTe/CdS SOLAR CELL FABRICATION, Geun Young Yeom, Kyun-Kwan University, Department of Material Engineering, Suwon, Korea; Jong-Ku Yoon, Sung-Ho Shin, Kwang-Ia Park, Kyoung-Hee Oho, National Industrial Technology, Department of Inorganic Chemistry, Kwachon, Korea; and Young-A Oho, Sung-Kyun-Kwan University, Department of Material Engineering, Suwon, Korea.

10:00 A.M. BREAK

10:30 A.M. *J10.6
THE EFFECT OF OXYGEN DURING CSS OF CdTe SOLAR CELLS, D. Rose, D. Albin, X. Li, R. Dhere, S. Asher, F. Hasoon, R. Matson and P. Sheldon, National Renewable Energy Laboratory, Golden, CO.

11:00 A.M. J10.7
SPRAY DEPOSITION OF SEMICONDUCTOR FILMS USING NANOPARTICLE COLLOID PRECURSORS PREPARED BY REACTION OF METAL IODIDE WITH SODIUM CHALCOGENIDE, Douglas L. Schulz, Martin Pehnt, Calvin J. Curtis and David S. Ginley, National Renewable Energy Laboratory, Golden, CO.

11:15 A.M. J10.8
STUDY OF ZnTe:Cu BACK CONTACTS ON CdTe/CdS THIN FILM SOLAR CELLS, J. Tang, L. Feng, D. Mao, W. Song and J.U. Trefny, Colorado School of Mines, Department of Physics, Golden, CO.

11:30 A.M. J10.9
INTERMIXING AT THE CdS/CdTe INTERFACE AND ITS EFFECT ON THE DEVICE PERFORMANCE, R.G. Dhere, D. Albin, D. Rose, S. Asher and P. Sheldon, National Renewable Energy Laboratory, Golden, CO.

11:45 A.M. J10.10
PROPERTIES OF PULSED-LASER-DEPOSITED CdSxTe1-x FILMS ON GLASS, Z. Feng, M. Shao, C. Narayanswami, G. Contreras-Puente and A. Compaan, The University of Toledo, Department of Physics and Astronomy, Toldeo, OH.

SESSION J11: III-V FILMS/DEVICES
Chair: Takahiro Wada
Thursday Afternoon, April 11
Golden Gate C3

1:30 P.M. J11.1
HIGH-EFFICIENCY CONCENTRATOR SOLAR CELLS BASED ON ALGaAs/GaAs HETEROSTRUCTURES, V.P. Khvostikov and E.V. Paleeva, A.F. Ioffe, Physical-Technical, Russian Academy of Sciences, St. Petersburg, Russia.

1:45 P.M. J11.2
GaSb BASED SOLAR CELLS, S.V. Sorokina, M.Z. Shvarts, A.F. Ioffe, Physical-Technical Institute, St. Petersburg, Russia.

2:00 P.M. J11.3
InGaAs/InP HETEROSTRUCTURES FOR CONCENTRATOR SOLAR CELLS, L.B. Karlina and M.Z. Shvarts, A.F. Ioffe Physico-Technical Institute, St. Petersburg, Russia.

2:15 P.M. J11.4
METHOD FOR OBTAINING HOMOGENEOUS EPITZAXIAL FILMS OF GaAs, Pham V. Huong, Université de Bordeaux I, Talence, France; and Stéphanie Bouchet, Véronique Chevrier, Jean-Claude Launay, Aérospatiale, Saint Medard en Jalles, France.

2:30 P.M. J11.5
ROLE OF DEEP LEVEL TRAPPING ON SURFACE PHOTOVOLTAGE IN HIGH-RESISTIVITY GaAs, Qiang Liu, Harry E. Ruda, Ivoil P. Koutzarouv, Lech Jedral and Genmao Chen, University of Toronto, Department of Materials Science, Toronto, Canada.

2:45 P.M. J11.6
CORRELATION BETWEEN THE QUANTIZED ENERGIES AND THE PHOTOVOLTAIC SPECTRA FOR A GaAs/AlGaAs QUANTUM WELL STRUCTURE, O.L. Russo, New Jersey Institute of Technology, Physics Department, Newark, NJ; V. Rehn, T.W. Nee, Michelson Laboratory, China Lake, CA; and K.A. Dumas, California Institute of Technology, Jet Propulsion Laboratory, Pasadena, CA.

3:00 P.M. BREAK

SESSION J12: NOVEL CONCEPTS II
Chair: Peter Meyers

3:30 P.M. J12.1
STRUCTURE AND NUMERICAL SIMULATION OF FIELD EFFECT SOLAR CELL, H. Koinuma, Tokyo Institute of Technology, Research Laboratory of Engineering Materials, Yokohama, Japan; H. Fujioka, C. Hu, University of California, Berkeley, Department of Electrical Engineering, Berkeley, CA; T. Koida M. Kawasaki, Research Laboratory of Engineering Materials, Tokyo Institute of Technology, Yokohama, Japan.

3:45 P.M. J12.2
A NEW CONFOCAL SCANNING LASER MACROSCOPE/MICROSCOPE APPLIED TO THE CHARACTERIZATION OF SOLAR CELLS, A.C. Ribes, S. Damaskinos, H.F. Tiedje, A.E. Dixon and D.E. Brodie, University of Waterloo, Department of Physics, Waterloo, Canada.

4:00 P.M. J12.3
FULL-OPTICAL CHARACTERIZATION OF THIN FILMS IN PHOTOVOLTAIC CELLS, D.A. Romanov, Russian Academy of Sciences Siberian Branch, Institute of Semiconductor Physics, Novosibirsk, Russia; N. Victoria, Universidad de la Republica, Facultad de Ingenieria, Montevideo, Uruguay.

4:15 P.M. J12.4
PHOTOVOLTAIC EFFECTS ON THIN FILMS OF CuS NANOCRYSTALS DEPOSITED ON IT, M.V. Artemyev and D.V. Sviridov, Belarusian State University, Institute of Physico-Chemical Problems, Minsk, Russia.

4:30 P.M. J12.5
PHOTOVOLTAIC PROPERTIES OF POROUS SILICON HETEROJUNCTIONS, D. Dimova-Malinovskaa, M. Tzolov, N. Tzenov, M. Sendova-Vassileva, M. Kamenova, Bulgarian Academy of Sciences, Central Laboratory for Solar Energy and New Energy Sources, Sofia, Bulgaria; and D. Nesheva, Bulgarian Academy of Sciences, Institute of SOlid State Physics, Sofia, Bulgaria.

4:45 P.M. J12.6
EX SITU AND IN SITU METHODS FOR COMPLETE OXYGEN AND NON-CARBIDIC CARBON REMOVAL FROM (0001) 6H-SiC SURFACES, Sean King, Robert Davis, North Carolina State University, Department of Materials Science and Engineering, Raleigh, NC; Robert Nemanich, North Carolina State University, Department of Physics, Raleigh, NC; Richard Kern, North Carolina State University, Department of Materials Science and Engineering, Raleigh, NC; and Mark Benjamin, North Carolina State University, Department of Physics, Raleigh, NC.

SESSION J13: POSTER SESSION II
Chairs: David Ginley and Hans Schock
Thursday Evening, April 11
8:00 P.M.
Presido Ballroom


J13.1 STRUCTURAL CHARACTERIZATION AND ELECTRICAL CONDUCTIVITY PERCOLATION OF (CdTe)1-xTex, Gerardo Morell, R.S. Katiyar, University of Puerto Rico, Department of Physics, San Juan, PR; O. Zelaya-Angel and F. Sánchez-Sinencio, CINVESTAV-IPN, México.

J13.2 THE NATURE GENERATION AND RECOMBINATION BEHAVIOR OF STRUCTURAL DEFECTS IN CdTe THIN FILMS. M.M. Al-Jassin, R.G. Dhere, K.M. Jones, F. Hasoon and P. Sheldon, NREL, Golden, CO.

J13.3 EFFECT OF CdTe STOICHIOMETRY ON THE ELECTRICAL PROPERTIES OF CdTe FILMS, Gil Young Chung and Byung Tae Ahn, Korea Advanced Institute of Science and Technology, Department of Materials Science and Engineering, Taejon, Korea.

J13.4 EFFECTS OF MAGNETIC FIELD CONFIGURATION ON RF SPUTTERING FOR CdS/CdTe SOLAR CELLS, A. Compaan, M. Shao, A. Fischer, D. Grecu, U. Jayamaha, R.G. Bohn and G. Contreras-Puente, The University of Toledo, Department of Physics and Astronomy, Toldeo, OH.

J13.5 GROWTH OF CuInS2 FILMS ON CRYSTALLINE SUBSTRATES, R. Hunger, R. Scheer, M. Alt, H.J. Lewerenz, Hahn-Meitner Institut, Department of Physical Chemistry, Berlin, Germany.

J13.6 ELECTRICAL PROPERTIES OF COEVAPORATED CuInS2 FILMS BY IN-SITU CONDUCTIVITY MEASUREMENTS, R. Scheer, M. Alt, I. Luck, R. Schieck, H.J. Lewerenz, Hahn-Meitner Institut, Department of Physical Chemistry, Berlin, Germany.

J13.7 CRYSTALLIZATION AND p-CONVERSION OF ELECTRO-DEPOSITED CdTe FILMS ON PREFORMED GRAPHITE BACK CONTACTS FOR BACK WALL SOLAR CELLS, A.C. Rastogi and K.S. Balakrishnan, National Physical Laboratory, New Delhi, India.

J13.8 COST FUNCTION FOR NON-CUBIC EPISTRUCTURES DESIGN, Andrey N. Efimov and Andrew O. Lebedev, Ioffe Institute, Dielectrics and Semiconductors, St. Petersburg, Russia.

J13.9 MECHANICS OF COHERENT MULTILAYER STRUCTURES, Andrey N. Efimov, Ioffe Institute, Dielectrics and Semiconductors, St. Petersburg, Russia.

J13.10 HIGH-ENERGY STATES IN THE VALENCE BAND OF ZINC-BLENDE STRUCTURE SEMICONDUCTORS WITH EXCESSIVE ATOMS, K.V. Savchenko, Institute for Low-Temperature Physics, Laboratory of Crystals Spectroscopy, Kharkov, Ukraine.

J13.11 IN-SITU DEPOSITION OF POLYMER BASED CONDUCTING THIN FILM ON SEMICONDUCTING AND INSULATING SUBSTRATES, Chun-Guey Wu, Jieh-Yih Chen and Ching-Yuh Chen, National Central University, Department of Chemistry, Chung-Li, Taiwan.

J13.12 A GLOBAL ELECTRICAL-OPTICAL MODEL OF THIN FILM SOLAR CELLS ON TEXTURED SUBSTRATES, Parsathi Chatterjee, Indian Association for the Cultivation of Science, Energy Research Unit, Calcutta, India; F. Leblanc, M. Favre and J. Perrin, Ecole Polytechnique, Laboratoire de Physique des Interfaces et des Couches Minces, Palaiseau, France.

J13.13 PULSED MAGNETIC FIELD ASSISTED DEPOSITION OF THIN FILMS ON SEMICONDUCTOR SUBSTRATES, Mark N. Levin, Voronezh State University, Nuclear Physics Department, Voronezh, Russia; and Victor N. Semenov, Voronezh State University, Inorganic Chemical Department, Voronezh, Russia.

J13.14 ELECTROPHYSICAL PROPERTIES OF HETEROSTRUCTURES BASED ON NANOCRYSTALLINE DIAMOND FILMS, V.I. Polvakov, N.M. Rossukanyi, A.L. Rukovishnikov, A.V. Khomich, P.J. Perov, A.L. Kirkunov, Institute of Radio Engineering and Electronics, Department of Microelectronics, Moscow, Russia; S.M. Pimenov and V.I. Konov, General Physics Institute, RAS, Moscow, Russia.

J13.15 ON THE GROWTH MECHANISM OF III-V COMPOUND SEMICONDUCTORS BY LIQUID PHASE ELECTROEPITAXY FOR PHOTOVOLTAIC APPLICATIONS, R.S. Qhalid Fareed and R. Dhanasekaran, Anna University, Crystal Growth Centre, Madras, India.

J13.16 CHARGE TRAPPING DEFECTS AND ATOMIC FORCE MICROSCOPE STUDY OF MICROCRYSTALLINE Chl a FILMS, S. Boussaad, A. Tazi and R.M. Leblanc, University of Miami, Chemistry Department, Coral Gables, FL.

J13.17 THIN FILM POLYCRYSTALLINE SILICON SOLAR CELLS WITH ENHANCED EFFICIENCY UNDER CONCENTRATED LIGHT ILLUMINATION, R.R. Bilyalov, B.M. Abdurakhamanov and R. Aliev, Institute of Electronics, Tashkent, Uzbekistan.


The following exhibitors have identified their products and services as directly related to your research:

Academic Press
AJA International
American Institute of Physics
Bede Scientific
CHA Industries
CVC Products, Inc.
Elsevier Science, Inc.
Goodfellow Corporation
Intelligent Sensor Technology, Inc.
IOP Publishing, Inc.
Isoflux, Inc.
JEOL USA, Inc.
Keithley Instruments
Kluwer Academic Publishers
Lake Shore Cryotronics, Inc.
Kurt J. Lesker Co.
Materials Research Group, Inc.
MDC Vacuum Products Corp.
Nano Instruments, Inc.
National Electrostatics Corp.
Philips Semiconductors/Materials Analysis Group
Plasma Sciences, Inc.
Pure Tech, Inc.
Radiant Technologies
Research & PVD Materials Corp.
Rigaku/USA, Inc.
Thermionics Laboratory, Inc.
Virginia Semiconductor, Inc.
Voltaix, Inc.

See page 6 for a complete list of exhibitors.