Meetings & Events

 

spring 1997 logo1997 MRS Spring Meeting & Exhibit

March 31 - April 4, 1997 | San Francisco
Meeting Chairs: Linda G. Griffith-Cima, David J. Eaglesham, Alexander H. King

Symposium A—Amorphous and Microcrystalline Silicon Technology

Chairs 

Michael Hack -- dpiX, A Xerox Company
Eric Schiff -- Syracuse Univ
Ruud Schropp -- Utrecht Univ
Isamu Shimizu -- Tokyo Inst of Technology
Sigurd Wagner -- Princeton Univ

Symposium Support

  • NAPS, France
  • Voltaix, Inc.

* Invited paper

SESSION A1/G1: AMORPHOUS SILICON THIN FILM TRANSISTORS I 
Chair: Sigurd Wagner
Tuesday Morning, April 1, 1997
Golden Gate A2

8:30 AM *A1.1/G1.1TECHNOLOGY TRENDS IN AMLCDs, Masaya Hijikigawa, Sharp Corporation, Tenri, Nara, JAPAN.9:00 AM A1.2/G1.2AMORPHOUS SILICON PHOTODIODE-THIN FILM TRANSISTOR IMAGE SENSOR WITH DIODE ON TOP STRUCTURE, Martin J. Powell, Philips Research Laboratories, Large Area Electronics Group, Surrey, UNITED KINGDOM; C. Glasse, Philips Research Laboratories, Redhill, UNITED KINGDOM; Ian D. French, Philips Research Laboratories, Large Area Electronics Group, Surrey, UNITED KINGDOM; A. R. Franklin, J. R. Hughes, J. E. Curran, Philips Research Laboratories, Redhill, UNITED KINGDOM.

9:15 AM *A1.3/G1.3
a-Si TFTs MATCHED TO ULTRA-LARGE PANELS, Masakiyo Matsumura, Akihiko Saitoh, Tokyo Inst of Technology, Dept of Physical Electronics, Tokyo, JAPAN.

9:45 AM A1.4/G1.4
VIA-HOLE ADDRESSED TFT AND PROCESS FOR LARGE-AREA a-Si:H ELECTRONICS, Helena Gleskova, Princeton Univ, Dept of Electrical Engr, Princeton, NJ; Sigurd Wagner, Princeton Univ, Dept of Electrical Engr, Princeton, NJ; Dashen Shen, Univ of Alabama, Dept of E tex2html_wrap_inline633CE, Huntsville, AL.

10:00 AM BREAK 

SESSION A2/G2: AMORPHOUS SILICON THIN FILM TRANSISTORS II 
Chair: Gregory N. Parsons
Tuesday Morning, April 1, 1997
Golden Gate A2

10:30 AM *A2.1/G2.1
MODELING AND SCALING OF a-Si:H AND POLY-Si THIN FILM TRANSISTORS, Michael S. Shur, Holly C. Slade, Trond Ytterdal, Rensselaer Polytechnic Inst, Dept of ECSE, Troy, NY.

11:00 AM A2.2/G2.2
BURIED CHANNEL AMORPHOUS SILICON THIN FILM TRANSISTORS FABRICATED BY DC REACTIVE MAGNETRON SPUTTERING, Cory Weber, Intel Corp, Beaverton, OR; Hyun-Chul Jin, Univ of Illinois-Urbana, Dept of MS tex2html_wrap_inline633E, Urbana, IL; John R. Abelson, Univ of Illinois-Urbana, Dept of Matls Science, Urbana, IL.

11:15 AM *A2.3/G2.3
PROSPECTS FOR ACTIVE MATRIX DISPLAYS ON PLASTIC, Stephen M. Gates, IBM T.J. Watson Research Center, Yorktown Heights, NY.

11:45 AM A2.4/G2.4
THIN FILM SILICON TRANSISTORS WITH SELF-PASSIVATED COPPER GATES, Henning Sirringhaus, Antoine Kahn, Sigurd Wagner, Princeton Univ, Dept of Electrical Engr, Princeton, NJ.

SESSION A3: CARRIER KINETICS AND DENSITY OF STATES IN a-Si 
Chairs: Satoshi Yamasaki and William Ireland Milne 
Tuesday Afternoon, April 1, 1997
Golden Gate A2

1:30 PM *A3.1
SPIN-DEPENDENT TRANSPORT IN Si THIN-FILM TRANSISTORS, Genshiro Kawachi, Hitachi Ltd, Dept of Imaging Devices, Ibaraki, JAPAN; C. F. O. Graeff, Univ de Sao Paulo, Dept de Fisica e Matematica , Sao Paulo, BRAZIL; M. S. Brandt, M. Stutzmann, Technische Univ Munich, Dept of Physics, Garching, GERMANY.

2:00 PM A3.2
SPIN DEPENDENCE OF PHOTOINDUCED EXCITATIONS IN a-Si:H, Niko Schultz, P. Craig Taylor, Valy Z. Vardeny, Univ of Utah, Dept of Physics, Salt Lake City, UT.

2:15 PM A3.3
HIGH-ELECTRIC FIELD EFFECTS ON THE THERMAL GENERATION IN HYDROGENATED AMORPHOUS SILICON, Adelina Ilie, Cambridge Univ, Dept of Engineering, Cambridge, UNITED KINGDOM; Bernard Equer, Ecole Polytechnique , Palaisreau, FRANCE.

2:30 PM A3.4
PHOTOLUMINESCENCE AND OPTICAL CHARACTERIZATION OF a-Si  :H BASED MULTILAYERS GROWN BY PECVD, F. Giorgis, F. Giuliani, C. F. Pirri, E. Tresso, Politecnico di Torino, Dept of Physics, Torino, ITALY; R. Galloni, Rita Rizzoli, C. Summonte, CNR-LAMEL, Bologna, ITALY; A. Desalvo, Univ degli Studi di Bologna, Dept di Chimica Appl e Scienza dei Materiali, Bologna, ITALY; P. Rava, Elettrorava S.p.A., Torino, ITALY.

2:45 PM A3.5
NEW RESULTS ON THE MICROSTRUCTURE OF AMORPHOUS SILICON AS OBSERVED BY INTERNAL FRICTION, Richard S. Crandall, A. H. Mahan, E. Iwaniczko, National Renewable Energy Lab, Golden, CO; K. M. Jones, National Renewable Energy Laboratory, Golden, CO; Xiao Liu, Cornell Univ, LAASP, Ithaca , NY; B. E. White, Cornell Univ, Ithaca, NY; R. O. Pohl, Cornell Univ, LAASP, Ithaca, NY.

3:00 PM BREAK 

3:30 PM *A3.6
DETERMINATION OF THE DENSITY OF STATES IN SEMICONDUCTORS FROM TRANSIENT PHOTOCONDUCTIVITY, Charles Main, Univ of Abertay, School of Engr, Dundee, UNITED KINGDOM.

4:00 PM A3.7
IDENTIFICATION OF THE DOMINANT ELECTRON DEEP TRAP IN a-Si:H: A CRITICAL TEST OF THE DEFECT POOL AND DEFECT RELAXATION PICTURES, J. David Cohen, Daewon Kwon, Univ of Oregon, Dept of Physics, Eugene, OR.

4:15 PM A3.8
NOISE, MICROSTRUCTURE, AND DEFECT METASTABILITY IN a-Si:H, Kristin M. Abkemeier, Cynthia L. Hunt, David G. Grier, Univ of Chicago, Dept of Physics, Chicago, IL.

4:30 PM A3.9
POLARIZED ELECTROABSORPTION IN PULSE AND CONTINUOUS LIGHT-SOAKED a-Si:H - STRUCTURAL CHANGE OTHER THAN DEFECT CREATION, Nobuhiro Hata, T. Kamei, H. Okamoto, Akihisa Matsuda, Electrotechnical Laboratory, Materials Science Div, Ibaraki, JAPAN.

4:45 PM A3.10
ELECTROABSORPTION SPECTRA FOR tex2html_wrap_inline639c-Si AND a-Si:H, Lin Jiang, Syracuse Univ, Dept of Physics, Syracuse, NY; Reinhard Schwarz, Technische Univ Munich, Dept of Physics E16, Garching, GERMANY; Eric A Schiff, Syracuse Univ, Dept of Physics, Syracuse, NY; N. Wyrsch, Univ of Neuchatel, Neuchatel, SWITZERLAND; P. Torres, Univ of Neuchatel, Inst de Microtechnique, Neuchatel, SWITZERLAND; Arvind V. Shah, Univ of Neuchatel, Neuchatel, SWITZERLAND.

SESSION A4: POSTER SESSION: 

PHYSICAL PROPERTIES 
Chairs: Helena Gleskova and Paul Wickboldt 
Tuesday Evening, April 1, 1997
8:00 P.M. 
Salon 7

A4.1
DEUTERIUM IN CRYSTALLINE AND AMORPHOUS SILICON, R. Borzi, Peter A. Fedders, D. J. Leopold, Richard E. Norberg, Washington Univ, Dept of Physics, St. Louis, MO; J. B. Boyce, Xerox Palo Alto Research Center, Palo Alto, CA; N. M. Johnson, Xerox Palo Alto Research Center, Dept of EML, Palo Alto, CA; S. E. Ready, Xerox Palo Alto Research Center, Palo Alto, CA; J. Walker, Xerox Palo Alto Research Center, Dept of EML, Palo Alto, CA.

A4.2
HYDROGEN POPULATIONS IN PECVD a-Si:H,D, T. S. Cull, Peter A. Fedders, D. J. Leopold, Richard E. Norberg, Washington Univ, Dept of Physics, St Louis, MO; Paul Wickboldt, Lawrence Livermore National Laboratory, Livermore, CA; William Paul, Harvard Univ, Cambridge, MA.

A4.3
AN INFRARED AND LUMINESCENCE STUDY OF TRITIATED AMORPHOUS SILICON, Lakhbeer S. Sidhu, Stefan Zukotynski, Tome Kosteski, Franco Gaspari, Univ of Toronto, Dept of E tex2html_wrap_inline633CE, Toronto, CANADA; Nazir Kherani, Ontario Hydro Technologies, Toronto, CANADA.

A4.4
REACTIVITY AND MIGRATION OF H IN A-Si:H, Rana Biswas, Qiming Li, Yokey Yoon, Iowa State Univ, Dept of Physics, Ames, IA.

A4.5
EVIDENCE FOR MOLECULAR DIFFUSION OF HYDROGEN IN tex2html_wrap_inline643-Si:C:H LAYERS, E.U.C. Ullersma, D. K. Inia, F.H.P.M. Habraken, W.G.J.H.M. van Sark, Werner F. van der Weg, Univ of Utrecht, Dept of Atomic tex2html_wrap_inline633Interface Physics, Utrecht, NETHERLANDS; A. van Veen, K. T. Westerduin, Delft Univ of Technology, Dept of Reactor Physics, Delft, NETHERLANDS.

A4.6
HYDROGEN AND DEUTERIUM DIFFUSION IN TRILAYERS OF GLOW-DISCHARGE AND HOT-WIRE DEPOSITED a-Si:H, R. Sinar, Hamide Kavak, Iowa State Univ, Microelectronics Research Ctr, Ames, IA; F. Li, Iowa State Univ, Dept of Physicstex2html_wrap_inline633Astronomy, Ames, IA; Joseph Shinar, Iowa State Univ, Dept of Physics tex2html_wrap_inline633Astronomy , Ames, IA; Howard Branz, E. Iwaniczko, A. H. Mahan, National Renewable Energy Lab, Golden, CO.

A4.7
VIBRATIONAL SIGNATURES OF H IN AMORPHOUS SILICON, Blair Tuttle, Univ of Illinois-Urbana, Dept of Physics, Urbana, IL; James B. Adams, Arizona State Univ, Dept of Chem, Biochem tex2html_wrap_inline633Matls, Tempe, AZ.

A4.8
MOLECULAR DYNAMICS STUDIES OF B DOPING IN a-Si:H, Peter A. Fedders, Washington Univ, Dept of Physics, St Louis, MO; David A Drabold, Ohio Univ, Dept of Physics tex2html_wrap_inline633Astronomy, Athens, Ohio.

A4.9
STRUCTURE RELAXATION AND DANGLING BOND TRANSITIONS IN a-Si:H, Qiming Li, Rana Biswas, Iowa State Univ, Dept of Physics, Ames, Iowa; Howard Branz, National Renewable Energy Lab, Golden, CO.

A4.10
INFLUENCE OF DEFECTS ON EXCESS CHARGE CARRIER KINETICS STUDIED BY TRANSIENT PC AND TRANSIENT PA, Holger Feist, Marinus Kunst, Carsten Swiatkowski, Hahn-Meitner-Inst, Dept of CS, Berlin , GERMANY.

A4.11
FAILURE OF THE DANGLING BOND-ONLY RECOMBINATION MODEL IN a-Si:H, Isaac Balberg, Hebrew Univ, Racah Inst, Jerusalem, ISRAEL; S. Zvi Weisz, Univ of Puerto Rico, Dept of Physics, San Juan, PR; Yoram Lubianiker, Hebrew Univ, Racah Inst, Jerusalem, ISRAEL; Luis F. Fonseca, Univ of Puerto Rico, Dept of Physics, San Juan, PR.

A4.12
THE INFLUENCE OF THE SUBSTRATE TEMPERATURE ON THE RECOMBINATION PROCESSES IN a-Si:H, Isaac Balberg, Yoram Lubianiker, Hebrew Univ, Racah Inst, Jerusalem, ISRAEL; S. Zvi Weisz, Luis F. Fonseca, Univ of Puerto Rico, Dept of Physics, San Juan, PR.

A4.13
THE TEMPERATURE DEPENDENCE OF THE PHOTOTRANSPORT PROPERTIES IN BORON-DOPED a-Si:H, Isaac Balberg, Yoram Lubianiker, Hebrew Univ, Racah Inst, Jerusalem, ISRAEL; S. Zvi Weisz, Luis F. Fonseca, Univ of Puerto Rico, Dept of Physics, San Juan, PR.

A4.14
TIME DEPENDENT REVERSE CURRENT IN AMORPHOUS SILICON SCHOTTKY DIODES, Koorosh Aflatooni, Richard Hornsey, Arokia Nathan, Univ of Waterloo, Dept of E tex2html_wrap_inline633CE, Waterloo, CANADA.

A4.15
INFLUENCE OF DEPOSITION CONDITIONS ON THE 1/f NOISE IN HYDROGENATED AMORPHOUS SILICON, Peter William West, David H. Quicker, Univ of Minnesota, School of Physics tex2html_wrap_inline633Astronomy, Minneapolis, MN; H. M. Dyalsingh, Univ of Minnesota, School of Physics tex2html_wrap_inline633Astronomy, Minnneapolis, MN; J. Kakalios, Univ of Minnesota, School of Physicstex2html_wrap_inline633Astronomy, Minneapolis, MN.

A4.16
FLUCTUATING DEFECT DENSITY PROBED WITH NOISE SPECTROSCOPY IN HYDROGENATED AMORPHOUS SILICON, Paul A.W.E. Verleg, Univ of Utrecht, Faculty of Physics and Astronomy, Utrecht, NETHERLANDS; Oktay Uca, Jaap I. Dijkhuis, Univ of Utrecht, Dept of Condensed Matter, Utrecht, THE NETHERLANDS.

A4.17
PERSISTENT PHOTOCONDUCTIVITY AND LONG-RANGE DISORDER IN a-Si:H, David H. Quicker, Peter William West, Univ of Minnesota, School of Physics tex2html_wrap_inline633Astronomy, Minneapolis, MN; J. Kakalios, Univ of Minnesota, School of Physicstex2html_wrap_inline633Astronomy, Minneapolis, MN.

A4.18
NUMERICAL SIMULATION OF THE TRANSIENT PHOTOCONDUCTIVITY IN A-SI:H AS A FUNCTION OF THE EXCITATION DENSITY, Holger Feist, Marinus Kunst, Hahn-Meitner-Inst, Dept of CS, Berlin, GERMANY.

A4.19
SELF-CONSISTENT ANALYSIS OF MOBILITY-LIFETIME PRODUCTS AND SUBGAP ABSORPTION ON DIFFERENT PECVD a-Si:H FILMS, Lihong Jiao, Pennsylvania State Univ, University Park, PA; Selena Semoushikina, Yeeheng Lee, Christopher R. Wronski, Pennsylvania State Univ, Dept of Electrical Engr, University Park, PA.

A4.20
PHOTOCONDUCTIVITY AND DENSITY OF STATES IN "MICROSTRUCTURAL" AMORPHOUS SILICON, B. G. Budaguan, Arcady Aivazov, Andrey G. Radoselsky, Moscow Inst of Electronic Technology, Dept of Microtechnology, Zelenograd, RUSSIA; A. A. Popov, Inst of Microelectronics, Yaroslavl, RUSSIA.

A4.21
THERMALIZATION OF HOT ELECTRONS IN AMORPHOUS SILICON, R. Vanderhaghen, Ecole Polytechnique , Lab de Physique des Interfaces, Palaiseau, FRANCE; Daniele Hulin, Ecole Polytechnique , ENSTA, Palaiseau, FRANCE; J. White, Univ de Bourgogne, Lab de Physique, Dijon, FRANCE.

A4.22
SPACE-CHARGE-LIMITED CURRENTS IN n-i-n DEVICES INCORPORATING GLOW-DISCHARGE AND HOT-WIRE DEPOSITED a-Si:H, Edith C. Molenbroek, Utrecht Univ, Debye Inst, Utrecht, NETHERLANDS; C. H. M. van der Werf, Univ of Utrecht, Dept of Automic tex2html_wrap_inline633Inteface Physics, Utrecht, NETHERLANDS; K. F. Feenstra, Utrecht Univ, Dept of Atomic and Interface Physics, Ultrecht, NETHERLANDS; F. Rubinelli, INTEC, Santa Fe, ARGENTINA; Ruud E.I. Schropp, Univ of Utrecht, Dept of Atomic tex2html_wrap_inline633Interface Physics, Utrecht, NETHERLANDS.

A4.23
SPACE CHARGE MEMORY EFFECTS IN a-Si:H AT LOW TEMPERATURES, Stephan Heck, Univ of Chicago, James Franck Inst, Chicago, IL; Paul Stradins, Univ of Chicago, James Franck Inst, Chicago, IL; Hellmut Fritzsche, Tucson, AZ.

A4.24
PHOTOCAPACITANCE MEASUREMENTS AND HOLE DRIFT MOBILITY IN a-Si:H, Indra Nurdjaja, Syracuse Univ, Dept of Physics, Syracuse, NY; Eric A. Schiff, Syracuse Univ, Dept of Physics, Syracuse, NY.

A4.25
INTERNAL ELECTRIC FIELD PROFILE IN THIN FILM HYDROGENATED AMORPHOUS SILICON JUNCTIONS USING TRANSIENT-NULL-CURRENT METHOD, Qi Wang, National Renewable Energy Lab, Golden, CO; Chen-Nan Yeh, Daxing Han, Univ of North Carolina, Dept of Physics tex2html_wrap_inline633Astronomy, Chapel Hill, NC.

A4.26
INSERTION OF AN UNDOPED BUFFER LAYER IN THE a-Si:H SOLAR CELL p tex2html_wrap_inline673/i JUNCTION AND INFLUENCE ON THE ABSORBER LAYER POTENTIAL PROFILE, Ahmad Nuruddin, Univ of Illinois-Urbana, Dept of Materials Science tex2html_wrap_inline633Engr, Urbana, IL; John R. Abelson, Univ of Illinois-Urbana, Dept of Matls Science, Urbana, IL.

A4.27
LIGHT-INDUCED METASTABLE DEFECTS OR LIGHT-INDUCED METASTABLE H ATOMS?, C. Godet, Ecole Polytechnique , Lab PICM, Palaiseau, FRANCE.

A4.28
DIRECT EVIDENCE OF LIGHT-INDUCED STRUCTURAL CHANGE IN A-Si:H FILM, Guanglin Kong, Guozhen Yue, Inst of Semiconductors, National lab for Surface Physics, Beijing, CHINA; Dianlin Zhang, Inst of Physics, Dept of Low Temp Physics, Beijing, CHINA; Shuran Sheng, Xianbo Liao, Inst of Semiconductors, National lab for Surface Physics, Beijing, CHINA.

A4.29
CHANGE IN THE SPECTRAL SHAPE OF THE SUBGAP ABSORPTION IN a-Si:H BY PHOTODEGRADATION AT 4.2K AND ITS RELATION TO THE MOBILITY-LIFETIME PRODUCT, Paul Stradins, Univ of Chicago, James Franck Inst, Chicago, IL; Hellmut Fritzsche, Tucson, AZ.

A4.30
LIGHT-INDUCED CONDUCTIVITY FLUCTUATIONS IN AMORPHOUS SILICON BASED NANOSTRUCTURES, Stepina Natalia Petrovna, Dvurechenskii Anatolii Vasil'evich, Yakimov Andrei Innokent'evich, Inst of Semiconductor Physics, Novosibirsk, RUSSIA.

A4.31
ON THE COMPENSATION MECHANISM OF AMORPHOUS SILICON FILMS: STUDY OF STABILITY, Domenico Caputo, Giampiero de Cesare, Univ of Rome, Dept of Electronic Engr, Rome, ITALY; Fabrizio Palma, Univ of Rome, Dept of Electonic Engr, Rome, ITALY; Mario Tucci, Univ of Rome, Dept of Electronic Engr, Rome, ITALY; Carla Minarini, Ezio Terzini, ENEA, CRIF, Napoli, ITALY.

A4.32
LIGHT-INDUCED EFFECTS IN HYDROGENATED AMORPHOUS SILICON FILMS ALLOYED WITH SULFUR, Jong-Hwan Yoon, P. Craig Taylor, Baojie Yan, Univ of Utah, Dept of Physics, Salt Lake City, UT; Czang-Ho Lee, Kangwon National Univ, Dept of Physics, Kangwon-do, KOREA.

A4.33
ELECTRON SPIN RESONANCE OF HYDROGENATED AMORPHOUS SILICON ALLOYED WITH SULFUR, Baojie Yan, P. Craig Taylor, Univ of Utah, Dept of Physics, Salt Lake City, UT.

A4.34
STRUCTURE AND ELECTRONIC PARAMETERS OF A-SI:H DEPOSITED BY DC-MASD, Olga Golikova, Michail Kazanin, Vera Kh. Kudoyarova, Alexey N. Kuznetsov, A.F. Ioffe Phys-Technical Inst, St Petersburg, RUSSIA; Guy Adriaennesens, Hannelore Herremans, Univ de Leuven, Heverlee, BELGIUM.

A4.35
EFFECTS OF SYNCHROTRON X-RAYS ON CVD-DEPOSITED AND ION-IMPLANTED tex2html_wrap_inline677-Si, Kin-Man Yu, Lei Wang, Lawrence Berkeley National Laboratory, Materials Science Div, Berkeley, CA; Wladyslaw Walukiewicz, Lawrence Berkeley National Laboratory, MSD,; S. Muto, Nagoya Univ, Ctr for Integrated Research, Nagoya, JAPAN; S. McCormick, Univ of Illinois-Urbana, Dept of MS tex2html_wrap_inline633E, Urbana , IL; John R. Abelson, Univ of Illinois-Urbana, Dept of Matls Science, Urbana, IL.

A4.36
DISORDER IN SELF-IMPLANTED CRYSTALLINE SILICON BEFORE AND AFTER ANNEALING, Xiao Liu, R. O. Pohl, Cornell Univ, LAASP, Ithaca , NY; Richard S. Crandall, National Renewable Energy Lab, Golden, CO; K. M. Jones, National Renewable Energy Laboratory, Golden, CO.

A4.37
STUDY OF MICROVOIDS IN HIGH-RATE a-Si:H USING POSITRON LIFETIME ANNIHILATION, X. Zho, City Univ of Hong Kong, Dept of Electronic Engr, Kowloon, HONG KONG; Dennis P. Webb, City Univ of Hong Kong, Dept of Electronic Engrg, Kowloon Tong, HONG KONG; Y. W. Lam, Y. C. Chan, City Univ of Hong Kong, Dept of Electronic Engr, Kowloon, HONG KONG.

A4.38
THE DEPTH PROFILING OF PLASMA-BEVELED SILICON FILMS BY RAMAN MICROPROBE, Arthur Simonian, Pacific Solar Pty Ltd, Botany, AUSTRALIA; Michael Bazylenko, Univ of New South Wales, Dept School of Elec Engr, Sydney, AUSTRALIA.

A4.39
CHARACTERIZATION OF MONOLAYER-LEVEL COMPOSITION AND OPTICAL GAP PROFILES IN AMORPHOUS SILICON-CARBON ALLOY BANDGAP-MODULATED STRUCTURES, H. Fujiwara, Joohyun Koh, Pennsylvania State Univ, University Park, PA; Robert W. Collins, Pennsylvania State Univ, Dept of Physics, University Park, PA.

A4.40
STRUCTURAL PROPERTIES OF a-GeCx:H ALLOYS PREPARED BY THE RF SPUTTERING TECHNIQUE, Francisco Chagas Marques, Johnny V. Lopez, UNICAMP, DFA, Campinas, BRAZIL.

A4.41
PREPARATION AND PROPERTIES OF HYDROGENATED AMORPHOUS GERMANIUM NITRIDE a-GeN tex2html_wrap_inline681:H, Masaomi Hioki, Gifu Univ, Dept of Electronic and Computer Engrg, Gifu, JAPAN; Shoji Nitta, Gifu Univ, Dept of Elect tex2html_wrap_inline633Computer Engr, Gifu, JAPAN; Yukihito Takeda, Gifu Univ, Dept of Electronic tex2html_wrap_inline633Computer Engr, Gifu, JAPAN; Kouki Yamamoto, Gifu Univ, Dept of Electronic tex2html_wrap_inline633Computer Engr, Gifu, JAPAN; Minoru Sasaki, Gifu Univ, Dept of Electronicstex2html_wrap_inline633Computer Engr, Gifu, JAPAN; Takashi Itoh, Gifu Univ, Dept of Electronic and Computer Engr, Gifu, JAPAN; Shuichi Nonomura, Gifu Univ, Dept of E tex2html_wrap_inline633CE, Gifu, JAPAN.

A4.42
EVIDENCE FOR DEVIATIONS FROM A LINEAR-EXPONENTIAL DISTRIBUTION OF TAIL STATES IN AMORPHOUS SILICON, Dennis P. Webb, City Univ of Hong Kong, Dept of Electronic Engrg, Kowloon Tong, HONG KONG; F. Y. Chan, X. C. Zou, Y. C. Chan, Y. W. Lam, City Univ of Hong Kong, Dept of Electronic Engr, Kowloon, HONG KONG; Stephen K. O'Leary, P. K. Lim, Hong Kong Baptist Univ, Dept of Physics, Kowloon Tong, HONG KONG.

A4.43
INVESTIGATIONS OF THIN a-Si:H FILMS - QUANTUM CONFINEMENT, BLUE SHIFT AND URBACH EDGE, Stephan A. Koehler, Univ of Chicago, James Franck Inst, Chicago, IL; H Fritzsche, Univ of Chicago, Chicago, IL.

A4.44
ROOM TEMPERATURE 1.54 tex2html_wrap_inline639m PHOTO- AND ELECTROLUMINESCENCE OF ERBIUM-DOPED HYDROGENATED AMORPHOUS SILICON, I. N. Yassievich, Michael Bresler, O. B. Gusev, Alexey N. Kuznetsov, Vera Kh. Kudoyarova, E. I. Terukov, A.F. Ioffe Phys-Technical Inst, St Petersburg, RUSSIA; W. Fuhs, Hahn-Meitner-Inst, Dept of Photovoltaiks, Berlin, GERMANY; I. Ulber, G. Weiser, Univ Marburg, Fachbereich Physik, Marburg, GERMANY.

A4.45
CORRELATION OF  AND  SPECTRA OF a-Si, POLY-Si, AND MIXTURES OF a-Si AND POLY-Si TO DEPOSITION TEMPERATURE, A. R. Forouhi, Iris Bloomer, n  k Technology Inc, Santa Clara, CA; Effiong Ibok, Shyam Garg, Advanced Micro Devices, Sunnyvale, CA; G. G. Li, n tex2html_wrap_inline633k Technology Inc, Santa Clara, CA; Joel W. Ager, Lawrence Berkeley National Laboratory, Material Science Div, Berkeley, CA.

A4.46
CORRELATION BETWEEN OPTICAL AND ELECTRICAL PROPERTIES OF DOPED tex2html_wrap_inline639C-Si:H FILMS, Rambhatla Murthy, Univ of Waterloo, Dept of Elect  Comp Engr, Waterloo, CANADA; Byung-kyu Park, Univ of Waterloo, Dept of ECE, Waterloo, CANADA; Richard Hornsey, Arokia Nathan, Univ of Waterloo, Dept of E tex2html_wrap_inline633CE, Waterloo, CANADA; Savvas G. Chamberlain, Univ of Waterloo, Dept of ECE, Waterloo, CANADA.

A4.47
TRANSPORT AND RECOMBINATION CHANNELS IN UNDOPED MICROCRYSTALLINE SILICON STUDIED BY ELECTRICALLY DETECTED MAGNETIC RESONANCE, D. Wills, Philipps Univ Marburg, Fachbereich Physik ,; C. LERNER, Philipps Univ Marburg, Fachbereich Physik, Marburg, GERMANY; W. Fuhs, Hahn-Meitner-
Inst, Dept of Photovoltaiks, Berlin, GERMANY; K. Lips, Hahn-Meitner-Inst, Dept of Photovoltaics, Berlin, GERMANY.

A4.48
OBSERVATION OF COULOMB BLOCKADE EFFECT IN SILICON NANOCRYSTALLITES AT ROOM TEMPERATURE, Xiaofeng Gu, Hua Qin, Hai Lu, Jun Xu, Kunji Chen, Nanjing Univ, Dept of Physics, Nanjing, CHINA.

A4.49
LATTICE PARAMETER AND PLASMONS IN VERY SMALL Si CRYSTALLITES, Saule Aldabergenova, Univ Erlangen-Nurnberg, Dept Mikrocharakterisierung, Erlangen, GERMANY; Martin Albrecht, Univ Erlangen-Nurnberg, Dept of Mikrocharakterisierung, Erlangen, GERMANY; Frank Gerhard, Univ Erlangen-Nurnberg, Dept Mikrocharacterisierung, Erlangen, GERMANY; Arkadi Andreev, A.F. Ioffe Phys-Technical Inst, Dept of Amorphous Semiconductors , St. Petersburg, RUSSIA; Horst P. Strunk, Univ Erlangen-Nurnberg, Inst Materials Science, Erlangen, GERMANY; Dirk Stenkamp, Univ Erlangen-Nurnberg, Dept Mikrocharakterisierung, Erlangen, GERMANY.

A4.50
ELECTRICAL AND OPTICAL PROPERTIES OF NANOCRYSTALLINE GaN:H THIN FILMS, Satoshi Kobayashi, Shuichi Nonomura, Kouichi Abe, Gifu Univ, Dept of E tex2html_wrap_inline633CE, Gifu, JAPAN; Tamihiro Goto, Gifu Univ, Dept of Elect tex2html_wrap_inline633Computer Engr, Gifu, JAPAN; Satoshi Hirata, Gifu Univ, Dept of Electronic and Computer Engineering, Gifu, JAPAN; Shoji Nitta, Gifu Univ, Dept of Elect tex2html_wrap_inline633Computer Engr, Gifu, JAPAN; Yoshihiko Kanemitsu, Univ of Tsukuba, Inst of Physics, Ibaraki, JAPAN.

A4.51
BLUE LUMINESCENCE IN FILMS CONTAINING Ge AND GeO tex2html_wrap_inline715NANOCRYSTALS: THE ROLE OF DEFECTS , Margit Zacharias, Univ of Rochester, Dept of Electrical Engr, Rochester, NY; S. J. Atherton, Univ of Rochester, Dept of Ecec Engr tex2html_wrap_inline633Chem, Rochester, NY; Philippe M. Fauchet, Univ of Rochester, Dept of Electrical Engr, Rochester, NY.

A4.52
STRUCTURAL RELAXATION OF VACANCIES IN AMORPHOUS SILICON, Eunja Kim, Univ of Nevada, Dept of Physics, Las Vegas, NV; Young Hee Lee, Jeonbuk National Univ, Dept of Physics, Jeonju, SOUTH KOREA; Changfeng Chen, Tao Pang, Univ of Nevada, Dept of Physics, Las Vegas, NV.

SESSION A5: MICROCRYSTALLINE SILICON 
Chairs: Isamu Shimizu and Ruud Schropp 
Wednesday Morning, April 2, 1997
Golden Gate A2

8:30 AM *A5.1
ELECTRONIC PROPERTIES OF MICROCRYSTALLINE SILICON, Reinhard Carius, Forschungszentrum Julich, ISI-PV, Julich, GERMANY.

9:00 AM A5.2
ELECTRONIC TRANSPORT PARALLEL AND PERPENDICULAR TO GROWTH DIRECTION IN MICROCRYSTALLINE SILICON DEPOSITED BY THE VHF-GD TECHNIQUE, M. Goerlitzer, Univ of Neuchatel, Inst de Microtechnique, Neuchatel, SWITZERLAND; Natalie Beck, P. Torres, Univ of Neuchatel, Inst de Microtechnique, Neuchatel, SWITZERLAND; J. Meier, Univ of Neuchatel, Inst de Microtechnique, Neuchatel, SWITZERLAND; N. Wyrsch, Arvind V. Shah, Univ of Neuchatel, Neuchatel, SWITZERLAND.

9:15 AM *A5.3
ELECTRONIC PROPERTIES AND DEVICE APPLICATIONS OF HOT-WIRE CVD POLYCRYSTALLINE SILICON FILMS, Abdul R. Middya, J. Guillet, J. E. Bouree, J. Perrin, Ecole Polytechnique , LPICM, Palaiseau, FRANCE; C. Longeaud, Ecole Superieure d'Electricite, LGEP, Gif-sur-Yvette, FRANCE; J. P. Kleider, Ecole Superieure d'Electricite, LEGP, Gif-sur-Yvette, FRANCE.

9:45 AM A5.4
INJECTION DOPING OF ULTRATHIN MICROCRYSTALLINE SILICON FILMS PREPARED BY CC-CVD, S. Koynov, CL SENES, Sofia, BULGARIA; S. Grebner, Technische Univ Munich, Dept of Physics, Garching, GERMANY; Reinhard Schwarz, Inst Superior Tecnico, Dept of Physics, Lisboa, PORTUGAL; L. Vasilev, Sofia Univ, Dept of Physics, Sofia, BULGARIA; I. Sieber, Hahn-Meitner-Inst, Dept of Photovoltaics, Berlin, GERMANY; Manfred Schmidt, W. Fuhs, Hahn-Meitner-Inst, Dept of Photovoltaiks, Berlin, GERMANY.

10:00 AM BREAK 

10:30 AM A5.5
NANOCRYSTALLINE SILICON THIN FILMS DEPOSITED BY PECVD IN PRESENCE OF SILICON NANOPARTICLES, Enric Bertran, Barcelona Univ, Dept of Applied Physics and Electronics, Barcelona Catalunya, SPAIN; P. Roca i Cabarrocas, S. Hamma, S. N. Sharma, G. Viera, J. Costa, Barcelona Univ, Dept of Applied Physics tex2html_wrap_inline633Electronics, Barcelona, SPAIN.

10:45 AM A5.6
CONTROL OF ENHANCED OPTICAL ABSORPTION IN NANOCRYSTALLINE Si, A. Kaan Kalkan, Pennsylvania State Univ, Electronic Matls Processing tex2html_wrap_inline633Res Lab, University Park, PA; Stephen J. Fonash, Pennsylvania State Univ, Elec Mat'l Processing tex2html_wrap_inline633Research LAb, University Park, PA.

11:00 AM A5.7
DEPOSITION AND CHARACTERIZATION OF POLYCRYSTALLINE SILICON FILMS FOR THIN FILM SOLAR CELLS ON GLASS SUBSTRATES, Ralf B. Bergmann, Max-Planck-Inst, Stuttgart, GERMANY; J. Krinke, Univ Erlangen-Nurnberg, Inst fur Werkstoffwissenschaften.