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2006 MRS Spring Meeting Logo2006 MRS Spring Meeting & Exhibit



April 17-21, 2006
| San Francisco
Meeting Chairs: J. Charles Barbour, Paul S. Drzaic, Gregg S. Higashi, Viola Vogel

Symposium A : Amorphous and Polycrystalline Thin-Film Silicon Science and Technology

2006-04-18   Show All Abstracts

Symposium Organizers

Harry A. Atwater California Institute of Technology
Virginia Chu INESC Microsistemas e Nanotecnologias
Sigurd Wagner Princeton University
Kenji Yamamoto Kaneka Corporation
Hsiao-Wen Zan National Chiao Tung University
A1: Transport and Electronic Properties
Session Chairs
Vik Dalal
Tuesday PM, April 18, 2006
Room 3002 (Moscone West)

9:30 AM - **A1.1
Time-resolved Photoconductivity as a Probe of Carrier Transport in Microcrystalline Silicon.

Steve Reynolds 1
1 Institute of Photovoltaics, Forschungszentrum Juelich, Juelich, NRW, Germany

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10:00 AM - A1.2
Carrier Dynamics in Microcrystalline Silicon Studied by Time-Resolved Terahertz Spectroscopy.

Ladislav Fekete 1 , Filip Kadlec 1 , Hynek Nemec 1 , Petr Kuzel 1 , Jiri Stuchlik 1 , Antonin Fejfar 1 , Jan Kocka 1
1 , Institute of Physics, Czech. Acad. Sci., Prague 8 Czech Republic

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10:15 AM - A1.3
Electronic Properties of a-Si:H/c-Si Heterojunctions.

Lars Korte 1 , Abdelazize Laades 1 , Manfred Schmidt 1
1 Silizium Photovoltaik, Hahn-Meitner-Institut, Berlin Germany

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10:30 AM - A1.4
Simulation of Realistic Core-shell Silicon Nanowires.

Rana Biswas 1 , Bicai Pan 2
1 Dept. of Physics & ECpE, MRC, Ames Lab, Iowa State University, Ames, Iowa, United States, 2 Dept of Physics, Univ of Science and Technology of China, Hefei China

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10:45 AM - A1.5
Correlating Light-Induced Degradation in the Performance of Nanocrystalline Silicon Solar Cells with Changes in the Electronic Properties Determined from Junction Capacitance Measurements.

Peter Hugger 1 , Shouvik Datta 1 , J. Cohen 1 , Guozhen Yue 2 , Gautam Ganguly 2 , Baojie Yan 2
1 Department of Physics, University of Oregon, Eugene, Oregon, United States, 2 , United Solar Ovonic Corporation, Troy, Michigan, United States

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11:00 AM - A1
BREAK

A2: Metastability
Session Chairs
Steve Reynolds
Tuesday PM, April 18, 2006
Room 3002 (Moscone West)

11:30 AM - **A2.1
Metastability in Hydrogenated Nanocrystalline Silicon Solar Cells.

Guozhen Yue 1 , Baojie Yan 1 , Gautam Ganguly 1 , Jeffrey Yang 1 , Subhendu Guha 1
1 , United Solar Ovonic Corporation, Troy, Michigan, United States

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12:00 PM - A2.2
Characterization of the Evolution in Metastable Defects Created by Recombination of Carriers Generated by Photo-generation and Injection in p-i-n a-Si:H Solar Cells.

Jingdong Deng 1 , Benjamin Ross 2 , Robert Collins 3 , Christopher Wronski 1
1 Electrical Engineering, Penn State University, University Park, Pennsylvania, United States, 2 Engineering Science and Mechanics, Penn State University, University Park, Pennsylvania, United States, 3 Physics and Astronomy, University of Toledo, Toledo, Ohio, United States

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12:15 PM - A2.3
Light-Soaking Effects on a-Si:H Solar Cells: Evidence for Self-Limitation?

Jianjun Liang 1 , Eric Schiff 1
1 Physics, Syracuse University, Syracuse, New York, United States

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12:30 PM - A2.4
Microscopic Theory of Hydrogen Related Metastability in Disordered Silicon.

Blair Tuttle 1
1 Physics, Penn State Erie; The Behrend College, Erie, Pennsylvania, United States

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12:45 PM - A2.5
The Effects of Oxygen Contamination and Light-Induced Degradation on the Electronic Properties of Hot-Wire CVD Amorphous Silicon-Germanium Alloys.

Shouvik Datta 1 , J. Cohen 1 , Yueqin Xu 2 , James Doyle 2 , A. Mahan 2 , Howard Branz 2
1 Department of Physics, University of Oregon, Eugene, Oregon, United States, 2 , National Renewable Energy Laboratory, Golden, Colorado, United States

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A3: Growth Mechanisms
Session Chairs
Shinsuke Miyajima
Tuesday PM, April 18, 2006
Room 3002 (Moscone West)

2:30 PM - **A3.1
In Situ Defect Spectroscopy: Probing Dangling Bonds During a-Si:H Film Growth by Subgap Absorption.

I.M.P. Aarts 1 , A.C.R. Pipino 2 , M.C.M. van de Sanden 1 , W.M.M. Kessels 1
1 Applied Physics, Eindhoven University of Technology, Eindhoven Netherlands, 2 Chemical Science and Technology Laboratory , National Institute of Standards and Technology (NIST), Gaithersburg, Maryland, United States

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3:00 PM - A3.2
Surface Roughening Transitions in Semiconductor Thin Films

Nikolas Podraza 1 , Jian Li 1 , Christopher Wronski 2 , Robert Collins 1
1 Department of Physics and Astronomy, University of Toledo, Toledo, Ohio, United States, 2 Department of Electrical Engineering, Pennsylvania State University, University Park, Pennsylvania, United States

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3:15 PM - A3.3
Reaction Mechanism for Deposition of Silicon Nitride by Hot-Wire CVD with Ultra High Deposition Rate(>7 nm/s).

Vasco Verlaan 1 , Zomer Silvester Houweling 1 , Karine Werf 1 , Hanno D. Goldbach 1 , Ruud E.I. Schropp 1
1 , Utrecht University, Utrecht Netherlands

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3:30 PM - A3.4
Analysis of Chemical Reactions between Radical Growth Precursors Adsorbed on Plasma-Deposited Silicon Thin-Film Surfaces

Tamas Bakos 1 , Mayur Valipa 1 2 , Dimitrios Maroudas 1
1 Chemical Engineering, University of Massachusetts, Amherst, Massachusetts, United States, 2 Chemical Engineering, University of California, Santa Barbara, California, United States

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3:45 PM - A3.5
Surface Evolution During Epitaxial and Polycrystalline Silicon Film Growth by Low Temperature Hot-Wire Chemical Vapor Deposition on Silicon Substrates

Christine Richardson 1 , Young-bae Park 1 , Harry Atwater 1
1 Thomas J. Watson Laboratories of Applied Physics, California Institute of Technology, Pasadena, California, United States

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4:00 PM - *
Break

A4: Growth Techniques and Interface Studies
Session Chairs
I. M. P. Aarts
Tuesday PM, April 18, 2006
Room 3002 (Moscone West)

4:30 PM - **A4.1
Properties of Nanocrystalline 3C-SiC:H and SiC:Ge:H Films Deposited at Low Substrate Temperature.

Shinsuke Miyajima 1 , Akira Yamada 2 , Makoto Konagai 1
1 Physical Electronics, Tokyo Institute of Technology, Tokyo Japan, 2 Quantum Nanoelectronics Research Center, Tokyo Institute of Technology, Tokyo Japan

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5:00 PM - A4.2
Dual-Chamber Plasma Co-Deposition of Nanoparticles in Amorphous Silicon Thin Films.

C. Anderson 1 , C. Blackwell 2 , J. Deneen 3 , C. Carter 3 , J. Kakalios 2 , U. Kortshagen 1
1 Dept. of Mechanical Engineering, University of Minnesota, Minneapolis, Minnesota, United States, 2 School of Physics and Astronomy, University of Minnesota, Minneapolis, Minnesota, United States, 3 Dept. of Chemical Engineering and Materials Science, University of Minnesota, Minneapolis, Minnesota, United States

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5:15 PM - A4.3
A Real-time Study of the a-Si/c-Si Interface Formation during Deposition using Ellipsometry, Infrared Spectroscopy, and Second-Harmonic Generation

Peter van den Oever 1 , Joost Gielis 1 , Bram Hoex 1 , Richard van de Sanden 1 , Erwin Kessels 1
1 Department of Applied Physics, Eindhoven University of Technology, Eindhoven Netherlands

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5:30 PM - A4.4
Interface Study Of Nanocrystalline Silicon/Multicrystalline Silicon Using Microwave Photoconductive Decay.

Mahdi Farrokh Baroughi 1 , Siva Sivoththaman 1
1 Electrical and Computer Engineering, University of Waterloo, Waterloo, Ontario, Canada

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5:45 PM - A4.5
Dewetting of Patterned Thin Solid Films.

Erwan Dornel 1 , J-C. Barbe 1 , J. Eymery 2 , F. de Crecy 1
1 LETI/D2NT/LSCDP, CEA, Grenoble France, 2 DRFMC/SP2M, CEA-CNRS-UJF, Grenoble France

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A5: Poster Session: Theory of Structure and Transport
Session Chairs
Virginia Chu
Arokia Nathan
Wenchang Yeh
Wednesday AM, April 19, 2006
Salons 8-15 (Marriott)

9:00 PM - A5.1
Research of Amorphous Silicon Thin-Film Structure and Growth Processes by Nonlinear Dynamics Method

Tatiana Larina 1 , Nikolay Bodyagin 1 , Sergey Vikhrov 1 , Stanislav Mursalov 1
1 BMPE, RGRTA, Ryazan Russian Federation

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9:00 PM - A5.2
Microscopic modeling of Phonon Thermal Conductivity in SiGe Superlattices.

Shang-Fen Ren 1 , Wei Cheng 1 2 , Gang Chen 3
1 Department of Physics, Illinois State University, Normal, Illinois, United States, 2 , Beijing Normal University, Beijing China, 3 Mechanical Engineering Department, Massachusetts Institute of Technology, Cambridge, Massachusetts, United States

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9:00 PM - A5.3
Molecular Dynamic Computer Simulation of Thin Film's Heat Dissipation Rate.

Ya-Yun Cheng 1 , Horng-Ming Hsieh 2 , C.C. Lee 1
1 , Institute of Optical Sciences, National Central University, Chung-Li 320 Taiwan, 2 , Institute of Nuclear Energy Research, Lungtan, Taoyuan 325 Taiwan

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9:00 PM - A5.4
A Nature of Structural Irreproducibility and Instability of Amorphous Silicon Thin-Films

Tatiana Larina 1 , Nikolay Bodyagin 1 , Sergey Vikhrov 1 , Stanislav Mursalov 1
1 BMPE, RGRTA, Ryazan Russian Federation

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9:00 PM - A5.5
Thermal Conductivity and Natural Cooling Rate of Excimer-laser annealed Si: A Molecular Dynamics Study.

Byoung-Min Lee 1 3 , Hong Koo Baik 1 , Baek Seok Seong 3 , Shinji Munetoh 2 , Teruaki Motooka 2
1 Metallurgical Engineering, Yonsei University , Seoul Korea (the Republic of), 3 Neutron Physics, Korea Atomic Energy Research Institute, Daejeon Korea (the Republic of), 2 Materials Science and Engineering, Kyushu University, Fukuoka Japan

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9:00 PM - A5.6
Phononic Amorphous Silicon: Theory, Material, and Devices.

Samrat Chawda 1 , Jose Mawyin 1 , Gary Halada 1 , Charles Fortmann 2
1 Materials Science and Engineering, Stony Brook University, Stony Brook, New York, United States, 2 Department of Applied Mathematics, Stony Brook University, Stony Brook, New York, United States

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9:00 PM - A5.7
Numerical Simulations of the Stefan Problem on Fully Adaptive Meshes.

Han Chen 2 , Chohong Min 3 , Frederic Gibou 1 2
2 Computer Science, UCSB, Santa Barbara, California, United States, 3 Mathematics, UCSB, Santa Barbara, California, United States, 1 Mechanical Engineering, ucsb, Santa Barbara, California, United States

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9:00 PM - A5.9
A Binary Two-dimensional Colloidal Glass former: Amorphous Structure and Heterogeneous Dynamics Analysis.

Hans Koenig 2 1
2 , University of Konstanz, Konstanz Germany, 1 , University of Mainz, Mainz Germany

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9:00 PM - A5
A5.8 Transferred to A1.4

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A6: Poster Session: Measurements of Film and Interface Properties
Session Chairs
Virginia Chu
Arokia Nathan
Wenchang Yeh
Wednesday AM, April 19, 2006
Salons 8-15 (Marriott)

9:00 PM - A6.1
Raman and X-ray Reflectivity Study of Annealed Polycrystalline Si/Ge Multilayer Structures.

Shilpa Tripathi 1 , R. Brajpuriya 1 , A. Sharma 1 , T. Shripathi 1 , S.M. Chaudhari 1
1 Beamline, UDCSR, Indore, M.P., India

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9:00 PM - A6.2
Environment of Er Doped in a-Si:H and Its Relation with Photoluminescence Spectra

Minoru Kumeda 1 , Yoshitaka Sekizawa 1 , Akiharu Morimoto 1 , Tatsuo Shimizu 2
1 , Kanazawa University, Kanazawa Japan, 2 , NTT Microsystem Integration Labs., Atsugi Japan

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9:00 PM - A6.3
Photocarrier Radiometric Lifetime Measurements of Intrinsic Amorphous-Crystalline Silicon Heterostructure.

Keith Leong 1 , Andreas Mandelis 2 , Nazir Kherani 1 , Stefan Zukotynski 1
1 Electrical & Computer Engineering, University of Toronto, Toronto, Ontario, Canada, 2 Mechanical and Industrial Engineering, University of Toronto, Toronto, Ontario, Canada

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9:00 PM - A6.4
Combined Defect Density in Amorphous Si Layer and Amorphous-Crystalline Si Interface Obtained with the Constant Photocurrent Method.

Barzin Bahardoust 1 , Nazir Kherani 1 , Stefan Zukotynski 1
1 Electrical & Computer Engineering, University of Toronto, Toronto, Ontario, Canada

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9:00 PM - A6.5
Microstructure Characterization of Amorphous Silicon-Nitride Films by Effusion Measurements.

Wolfhard Beyer 1 , H.F.W. Dekkers 2
1 Institute of Photovoltaics, Forschungszentrum Juelich, Juelich Germany, 2 , IMEC vzw, Leuven Belgium

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9:00 PM - A6.6
Annealing Effects on the Phase and Electronic Structure Evolutions of SiO Film by Electron Energy Loss Spectroscopy.

Juan Wang 1 , Xiaofeng Wang 1 , Alkiviathes Meldrum 2 , Quan Li 1
1 Physics, The Chinese University of Hong Kong, Hong Kong Hong Kong, 2 Physics, University of Alberta, Edmonton, Alberta, Canada

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9:00 PM - A6.7
Modeling Dynamical Crack Propagation in Silicon Films Using the ReaxFF Reactive Force Field.

Markus Buehler 1 , Adri Duin 2 , William Goddard 2
1 Civil and Environmental Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts, United States, 2 Chemistry, California Institute of Technology, Pasadena, California, United States

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9:00 PM - A6.9
Direct Observation of the Surface Dynamics of Dangling Bonds During H interaction with a-Si:H.

I.M.P. Aarts 1 , A.C.R. Pipino 2 , W.M.M. Kessels 1 , M.C.M. van de Sanden 1
1 Applied Physics, Eindhoven University of Technology, Eindhoven Netherlands, 2 Chemical Science and Technology Laboratory , National Institute of Standards and Technology (NIST), Gaithersburg, Maryland, United States

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A7: Poster Session: Amorphous Silicon Growth
Session Chairs
Virginia Chu
Arokia Nathan
Wenchang Yeh
Wednesday AM, April 19, 2006
Salons 8-15 (Marriott)

9:00 PM - A7.1
Electrical Characterization of SiCN Films Deposited by HW-CVD Method Using Hezamethyldisilazane.

Takashi Nakayamada 1 , Akira Izumi 1
1 , Kyushu Institute of Technology, Fukuoka Japan

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9:00 PM - A7.2
Effect of Hydrogen Dilution on Structure and Electronic Properties of Ge:H and GeY-Si1-Y Films Deposited by Low Frequency Plasma

Andrey Kosarev 1 , Liborio Sanchez 1 , Alfonso Torres 1 , Thomas Felter 2 , Alexander Ilinski 3 , Yurii Kudriavtsev 4 , Rene Asomoza 4
1 Electronics, Inst.Nat.for Astrophysics, Optics and Electronics, Puebla, Puebla, Mexico, 2 Physics, Lawrence Livermore National Laboratory, Livermore, California, United States, 3 Physics, Benemerita Universidad Autonoma de Puebla, Puebla Mexico, 4 Ingeneria Electrica, SEES, CINVESTAV-IPN, Puebla, Mexico DF, Mexico