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2006 MRS Spring Meeting Logo2006 MRS Spring Meeting & Exhibit



April 17-21, 2006
| San Francisco
Meeting Chairs: J. Charles Barbour, Paul S. Drzaic, Gregg S. Higashi, Viola Vogel

Symposium B : Silicon Carbide---Materials, Processing, and Devices

2006-04-18   Show All Abstracts

Symposium Organizers

Michael A. Capano Purdue University
Michael Dudley State University of New York-Stony Brook
Tsunenobu Kimoto Kyoto University-Katsura
Adrian R. Powell Cree Inc.
Shaoping Wang Fairfield Crystal Technology
B1: Bulk Growth I
Session Chairs
Adrian Powell
Tuesday PM, April 18, 2006
Room 3004 (Moscone West)

9:15 AM - **B1.1
Recent Progress in the Growth and Polishing of 75mm and 100 mm SiC Substrates for RF and High Power Electronic Applications.

T. Anderson 1 , J. Chen 1 , E. Emorhokpor 1 , A. Gupta 1 , C. Martin 1 , P. Wu 1 , M. Yoganathan 1 , Andrew Souzis 1 , I. Zwieback 1
1 , II-VI Incorporated, Pine Brook, New Jersey, United States

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9:45 AM - B1.2
Effect of Radiation in Solid during SiC Sublimation Growth.

Shin-ichi Nishizawa 1 , Shin-ichi Nakashima 1 , Tomohisa Kato 1
1 , National Institute of Advanced Industrial Science and Technology, Tsukuba Japan

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10:00 AM - B1.3
High Carrier Lifetime Bulk-Grown 4H-SiC Substrates for Power Applications.

David Malta 1 , Jason Jenny 1 , Valeri Tsvetkov 1 , Mrinal Das 1 , Don Hobgood 1 , Calvin Carter 1
1 , Cree, Inc., Durham, North Carolina, United States

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10:15 AM - B1.4
Growth and Characterization of Nitrogen Doped 4H SiC Boules by Halide Chemical Vapor Deposition.

Mark Fanton 1 , Alexander Polyakov 2 , Sung Wook Huh 2 , Paul Klein 3 , Marek Skowronski 2 , David Snyder 1 , Brian Weiland 1
1 Electro-Optics Center, Penn State University, Freeport, Pennsylvania, United States, 2 Materials Science & Engineering, Carnegie Mellon University, Pittsburgh, Pennsylvania, United States, 3 , Naval Research Laboratory, Washington, District of Columbia, United States

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10:30 AM - **B1.5
Investigation Of Dislocation Behavior During Bulk Crystal Growth Of SiC.

Noboru Ohtani 1 , M Katsuno 1 , H Tsuge 1 , M Nakabayashi 1 , T Fujimoto 1 , H Yashiro 1 , M Sawamura 1 , T Aigo 1 , T Hoshino 1
1 Advanced Technology Research Laboratories, Nippon Steel Corporation, Chiba Japan

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11:00 AM - B1: Bulk I
BREAK

B2: Epitaxial Growth I
Session Chairs
M. Dudley
Tuesday PM, April 18, 2006
Room 3004 (Moscone West)

11:30 AM - B2.1
High Growth Rate Process in a SiC Horizontal Reactor with the Addition of HCl: Structural and Electrical Characterization.

Francesco La Via 1 , Giuseppa Galvagno 1 , Andrea Firrincieli 1 , Salvatore Di Franco 1 , Andrea Severino 1 , Marco Mauceri 3 , Stefano Leone 3 , Giuseppe Abbondanza 3 , Ferdinando Portuese 3 , Lucia Calcagno 2 , Gaetano Foti 2
1 , CNR-IMM, Catania Italy, 3 , Epitaxial Technology Center, Catania Italy, 2 Physics Department, Catania University, Catania Italy

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11:45 AM - B2.2
Growth Rate, Morphology Control, and Dopant Incorporation in Low-temperature Epitaxial Growth of 4H-SiC Using CH3Cl Growth Precursor.

Yaroslav Koshka 1 , Huang-De Lin 1
1 , Mississippi State University, Mississippi State, Mississippi, United States

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12:00 PM - **B2.3
Growth of Crystalline Silicon Carbide by CVD Using Chlorosilane Gases

Mark Loboda 1 , M. MacMillan 1 , J. Wan 1 , G. Chung 1 , E. Carlson 1 , Y. Makarov 2 , A. Galyukov 2 , M. Molnar 3
1 , Dow Corning Corporation, Midland, Michigan, United States, 2 , Semiconductor Technology Research, Inc., Richmond, Virginia, United States, 3 , Hemlock Semiconductor Corporation, Hemlock, Michigan, United States

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12:30 PM - B2.4
Epitaxial Growth of 4H-SiC with Ge-incorporated 4H-SiC Buffer Layer.

Akinori Seki 1 , Akira Manabe 1 , Yukari Ishikawa 2 , Noriyoshi Shibata 2
1 Higashifuji Technical Center, Toyota Motor Corporation, Susono, Shizuoka, Japan, 2 R & D , Japan Fine Ceramics Center, Nagoya, Aichi, Japan

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12:45 PM - B2.5
HCl Induced 4H-SiC Growth Rate Increases and Morphology Issues in a Vertical Cold Wall Reactor

Chris Thomas 1 , MVS Chandrashekhar 1 , Yuri Makarov 2 , Michael Spencer 1
1 Electrical and Computer Engineering, Cornell University, Ithaca, New York, United States, 2 , Widetronix, Inc, Ithaca, New York, United States

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B3: Dislocations in Epitaxy
Session Chairs
S. Nishizawa
Tuesday PM, April 18, 2006
Room 3004 (Moscone West)

2:30 PM - B3.1
Growth of Low Basal Plane Density SiC Epilayers with Minimized Surface Depressions.

Zehong Zhang 1 , Tangali Sudarshan 1
1 , Univ. of South Carolina, Columbia, South Carolina, United States

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2:45 PM - B3.2
Decrease in the Defect Density of Homoepitaxial Film by Surface Pretreatment of 4H-SiC Substrate.

Yukari Ishikawa 1 , Noriyoshi Shibata 1 , Akinori Seki 2 , Akira Manabe 2
1 R &D , Japan Fine Ceramics Center, Nagoya, Aichi, Japan, 2 Higashifuji Technical Center, Toyota Motor Co., Susono, Shizuoka, Japan

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3:00 PM - B3.3
Non-Destructive Electro- and Photo-Luminescence Imaging of Dislocations in SiC Epitaxy.

Kendrick Liu 1 , Robert Stahlbush 1 , Karl Hobart 1 , Joseph Sumakeris 2 , F. J. Kub 1
1 , Naval Research Laboratory, Washington, District of Columbia, United States, 2 , Cree, Inc, Durham, North Carolina, United States

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3:15 PM - B3.4
Prismatic Faults In 4H-Sic Pin Diodes.

Mark Twigg 1 , Nabil Bassim 1 , Robert Stahlbush 1 , Paul Losee 2 , Canhua Lee 2 , Ishwara Bhat 2 , T. Chow 2
1 Electronics Science and Technology Division, Naval Research Laboratory, Washington, District of Columbia, United States, 2 Department of Electrical, Computer, and Systems Engineering, Rensselaer Polytechnic Institute, Troy, New York, United States

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3:30 PM - B3.5
Electrical and Lifetime Characterization of In-Grown Stacking Faults in 4H-SiC

Joshua Caldwell 1 , Paul Klein 1 , Robert Stahlbush 1 , Orest Glembocki 1 , Karl Hobart 1 , Fritz Kub 1
1 Power Electronics, Naval Research Lab, Washington , District of Columbia, United States

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3:45 PM - **B3.6
Do You Really Expect To Grow Epilayers On That? A Rationale For Growing Epilayers On Roughened Surfaces.

Joseph Sumakeris 1 , Brett Hull 1 , Michael O'Loughlin 1 , S. Ha 2 , Marek Skowronski 2 , John Palmour 1 , Calvin Carter, Jr. 1
1 , Cree, Inc, Durham, North Carolina, United States, 2 , Carnegie Mellon University, Pittsburgh, Pennsylvania, United States

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4:15 PM - B3: Epi Disloc
BREAK

B4: Bulk Growth II
Session Chairs
S. Wang
Tuesday PM, April 18, 2006
Room 3004 (Moscone West)

4:30 PM - B4.1
Electrical Properties of Undoped 4H-SiC Crystals Grown by Halide Chemical Vapor Deposition.

H.J. Chung 1 , S. Nigam 1 , S.W. Huh 1 , A.Y. Polyakov 1 , M. Skowronski 1 , E.R. Glaser 2 , J.A. Freitas,Jr. 2 , M.A. Fanton 3
1 Materials Science and Engineering, Carnegie Mellon University, Pittsburgh, Pennsylvania, United States, 2 , Naval Research Laboratory, Washington, District of Columbia, United States, 3 , Penn State University Electro-Optics Center, Freeport, Pennsylvania, United States

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4:45 PM - **B4.2
Silicon Carbide Growth: Evaluation and Modeling.

Michel Pons 1 , Peter Wellmann 2 , Schin-Ichi Nishizawa 3 , Elisabeth Blanquet 1 , Jean-Marc Dedulle 1 , Didier Chaussende 1
1 LTPCM, INPGrenoble, Saint Martin D'Heres France, 2 Material Science, University of Erlangen, Erlangen Germany, 3 , AIST, Tsukuba Japan

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5:15 PM - B4.3
Lifetime Killer Defect in Undoped 6H-SiC Bulk Crystals Grown by Halide Chemical Vapor Deposition.

Saurav Nigam 1 , Sung Huh 1 , Hun Chung 1 , Alexander Polyakov 1 , Marek Skowronski 1
1 Department of Materials Science and Engineering, Carnegie Mellon University, Pittsburgh, Pennsylvania, United States

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5:30 PM - B4.4
Effects of Annealing on Deep Centers in HCVD-grown n-type 6H-SiC.

S.W. Huh 1 , H.J. Chung 1 , S. Nigam 1 , A. Polyakov 1 , M. Skowronski 1 , E. Glaser 2 , N. Garces 2 , W. Carlos 2
1 MSE, Carnegie Mellon University, Pittsburgh, Pennsylvania, United States, 2 , Naval Research Laboratory, Washington, D.C., District of Columbia, United States

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B5: Poster Session: SiC Materials Posters
Session Chairs
J. Sumakeris
Wednesday AM, April 19, 2006
Salons 8-15 (Marriott)

9:00 PM - B5.1
The Formation of Smooth, Defect-free, Stoichiometric Silicon Carbide Films from a Polymeric Precursor.

Michael Pitcher 1 , Patricia Bianconi 2
1 Chemistry, METU, Ankara Turkey, 2 Chemistry, University of Massachusetts at Amherst, Amherst, Massachusetts, United States

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9:00 PM - B5.10
Preparation of Al2O3 Thin Films on SiC by Metal Organic Chemical Vapor Deposition.

Tomohiro Hatayama 1 , Shiro Hino 1 , Shiho Hagiwara 1 , Eisuke Tokumitsu 1
1 , Tokyo Institute of Technology, Yokohama Japan

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9:00 PM - B5.11
High-Resolution X-ray Topography of Dislocations in 4H-SiC Epilayers

Isaho Kamata 1 , Hidekazu Tsuchida 1 , William Vetter 2 , Michael Dudley 2
1 , Central research institute of electric power industry, Yokosuka, Kanagawa, Japan, 2 , State university of New York, Stony Brook, New York, United States

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9:00 PM - B5.12
Perchlorosilanes and Perchlorocarbosilanes as Precursors to Silicon Carbide.

Roman Pavelko 1 , Vladimir Sevastyanov 1 , Yurij Ezhov 1 , Nikolaj Kuznetsov 1
1 , Kurnakov Institute of General and Inorganic Chemistryof Russian Academy of Sciences, Moscow Russian Federation

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9:00 PM - B5.13
Measurement of the Electon-hole Pair Ionization Energy in a 4H SiC Betavoltaic cell.

MVS Chandrashekhar 1 , Christopher Thomas 1 , Michael Spencer 1
1 Electrical Computer Engineering, Cornell University, Ithaca, New York, United States

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9:00 PM - B5.14
Effects of Hydrogen on the Physical Vapor Transport Growth and Properties of Nitrogen Doped 4H SiC

Mark Fanton 1 , Alexander Polyakov 2 , Sung Wook Huh 2 , Marek Skowronski 2 , Randal Cavalero 1 , Rodney Ray 1
1 Electro-Optics Center, Penn State University, Freeport, Pennsylvania, United States, 2 Materials Science & Engineering, Carnegie Mellon University, Pittsburgh, Pennsylvania, United States

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9:00 PM - B5.15
Deep Traps Spectra in n-type and p-type 4H-SiC Films Grown by Chlorosilane Epitaxy.

S.W. Huh 1 , S. Nigam 1 , A. Polyakov 1 , M. Skowronski 1 , G. Chung 2 , M. MacMillan 2 , J. Wan 2 , M. Laboda 2
1 MSE, Carnegie Mellon University, Pittsburgh, Pennsylvania, United States, 2 , Dow Corning Compound Semiconductor Solutions, Midland, Michigan, United States

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9:00 PM - B5.17
Toward Particulate-Free Thin Films of SiC and TiC by Plasma Discharge Assisted Pulsed Laser Deposition.

Robert Combs 1 , Xiaodong Zhang 1 , Brent Koplitz 1
1 Chemistry, Tulane University, New Orleans, Louisiana, United States

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9:00 PM - B5.18
Passivation of Dangling Bonds at Hexagonal SiC Surfaces.

Gary Pennington 1 , C Ashman 2 , N Goldsman 1 , P Lenahan 3 , A Lelis 4
1 , University of Maryland, College Park, Maryland, United States, 2 , HPTi, Reston, Virginia, United States, 3 , Penn State University, University Park, Pennsylvania, United States, 4 , Army Research Lab, Adelphi, Maryland, United States

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9:00 PM - B5.19
Halide Chemical Vapor Deposition of Thick AlN Films on SiC.

Timothy Bogart 1 , Mark Fanton 1 , Xiaojun Weng 2 , Ed Oslosky 1 , Brian Weiland 1 , Rodney Ray 1 , Adam Dilts 1 , David Snyder 1
1 , Penn State Electro-Optics Center, Freeport, Pennsylvania, United States, 2 Materials Science & Engineering, Pennsylvania State University, University Park, Pennsylvania, United States

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9:00 PM - B5.2
Surface Dynamics in Alloys Growth: Simulation of the Effect of Multi-species Deposition on Unstable Vicinal Surfaces.

Ajmi BHadj-Hamouda 1 , Alberto Pimpinelli 1 , Florin Nita 2 3
1 LASMEA, Universite Blaise Pasca l, 6602 du CNRS, 63177, AUBIERE France, 2 Institute of physical chemistry, IG Murgulescu" of Romanian Academy, Spl. Independentei 202, Bucharest Romania, 3 Dipartimento di Fisica, INFM and IMEM/CNR, Via Dodecaneso 33, Genova, I1614 Italy

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9:00 PM - B5.20
Characterization of SiC Materials and Devices by SIMS

Yupu Li 1 , Yumin Gao 1
1 , Applied Microanalysis Labs, Santa Clara, California, United States

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9:00 PM - B5.21
Defects in 4H-SiC MOSFETs: Processing Dependent Defect Densities

Morgen Dautrich 1 , Patrick Lenahan 1 , Aivars Lelis 2
1 , Penn State University, University Park, Pennsylvania, United States, 2 , Army Research Labs, Adelphi, Maryland, United States

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9:00 PM - B5.22
Dislocation-Related Etch Protrusions Formed On 4H-Sic (000-1) Surface By Molten KOH Etching.

Masahide Gotoh 1 , Takeshi Tawara 1 , Shun-ichi Nakamura 1 , Tae Tamori 1 , Yoshiyuki Kuboki 1 , Yoshiyuki Yonezawa 1 , Masaharu Nishiura 1
1 , Fuji Electric Advanced Technology Co., Ltd., Matsumoto, Nagano, Japan

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9:00 PM - B5.23
PECVD A-Sic:H Encapsulation For Chronically Implanted Neural Recording Devices.

Jui-Mei Hsu 2 , Prashant Tathireddy 1 , Loren Rieth 2 1 , Sascha Kammer 3 , Klaus Peter Koch 3 , A. Richard Normann 4 , Florian Solzbacher 1 2 4
2 Department of Material Science and Engineering, University of Utah, Salt Lake City, Utah, United States, 1 Department of Electrical Engineering, University of Utah, Salt Lake City, Utah, United States, 3 Department of Medical Technology and Neuroprosthetics, Fraunhofer Institute for Biomedical Engineering, St. Ingbert Germany, 4 Department of Bioengineering, University of Utah, Salt Lake City, Utah, United States

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9:00 PM - B5.24
The Formation Mechanism of Carrot Defects in SiC Epifilms.

Xiaoting Jia 1 , Juan Zhou 1 , Jie Bai 1 , Michael Dudley 1
1 Materials Science & Engineering, Stony Brook University, Stony Brook, New York, United States

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9:00 PM - B5.25
Seedless Coalescence of Pendeo-epitaxial 3C SiC grown on High Aspect Ratio Micromachined Si Posts.

MVS Chandrashekhar 1 , Christopher Thomas 1 , Brian Noel 2 , Michael Spencer 1
1 Electrical Computer Engineering, Cornell University, Ithaca, New York, United States, 2 Electrical Computer Engineering, Virginia Commonwealth University, Richmond, Virginia, United States

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9:00 PM - B5.26
Crystal face and C/Si ratio Dependence of Phosphorus Doping by SiC Epitaxial Growth.

Takeshi Tawara 1 , Yuko Ueki 1 , Shun-ichi Nakamura 1 , Masahide Gotoh 1 , Yoshiyuki Yonezawa 1 , Masaharu Nishiura 1
1 , Fujielectric Advanced Technology Co., Nagano Japan

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9:00 PM - B5.27
Growth and Mechanism in Halide Chemical Vapor Deposition of Silicon Carbide.

Yi Chen 1 , Govindhan Dhanaraj 1 , Hui Chen 1 , Hui Zhang 2 , Michael Dudley 1
1 Materials Science and Engineering, Stony Brook University, Stony Brook, New York, United States, 2 Mechanical Engineering, Stony Brook University, Stony Brook, New York, United States

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9:00 PM - B5.28
Development of PECVD SiC for MEMS Using 3MS as the Precursor

Jia