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2006 MRS Spring Meeting Logo2006 MRS Spring Meeting & Exhibit



April 17-21, 2006
| San Francisco
Meeting Chairs: J. Charles Barbour, Paul S. Drzaic, Gregg S. Higashi, Viola Vogel

Symposium F : Materials, Technology, and Reliability of Low-k Dielectrics and Copper Interconnects

2006-04-18   Show All Abstracts

Symposium Organizers

Ting Y. Tsui Texas Instruments, Inc.
Young-Chang Joo Seoul National University
Alex A. Volinsky University of South Florida
Lynne Michaelson Vishay Electro-Films
Michael Lane IBM T.J. Watson Research Center
F1: Processing and Characterizations of Low-k Dielectrics
Session Chairs
Michael Lane
Joost Vlassak
Tuesday PM, April 18, 2006
Room 3009 (Moscone West)

9:30 AM - **F1.1
Development of Ultralow-k SiCOH Dielectrics with K Values Down to 1.80.

Alfred Grill 1 , Vishnubhai Patel 1 , Son Nguyen 1 , Deborah Neumayer 1 , Muthumanickam Sankarapandian 1 , Yuri Ostrovski 1 , Eric Liniger 1 , Eva Simonyi 1
1 , IBM - T.J. Watson Research Center, Yorktown Heights, New York, United States

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10:00 AM - **F1.2
Impact of Pore Size and Morphology of Porous Organosilicate Glasses on Integrated Circuit Manufacturing.

Mark O'Neill 1 , Raymond Vrtis 1 , Brian Peterson 2 , Mary Haas 1 , Scott Weigel 1 , Dingjun Wu 1 , Mark Bitner 1 , Eugene Karwacki 1
1 Electronics Technology, Air Products and Chemicals, Inc., Allentown, Pennsylvania, United States, 2 Computational Modeling Center, Air Products and Chemicals, Inc., Allentown, Pennsylvania, United States

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10:30 AM - F1.3
Pore Engineering: Ultra Low k Porous SiCOH For 45nm And Beyond.

Sang Ahn 1 , Josephine Chang 1 , Thomas Nowak 1 , Nagarajan Rajagopalan 1 , Kangsub Yim 1 , Khaled Elsheref 1 , Alex Demos 1 , Sanjeev Jain 1 , Derek Witty 1 , Hichem MSaad 1
1 , Applied Materials, Inc., Santa Clara, California, United States

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10:45 AM - *
Break

11:15 AM - **F1.4
Novel Polysilsesquioxane Systems for Ultralow-Dielectric Films with High Modulus, Low CTE, and Closed-Pore Morphology

Do Yoon 1 , Hyun Wook Ro 2 , Jie Hye Park 1 , Jae Hwan Shim 1 , Eun Su Park 1 , Jin-Kyu Lee 1 , Hee-Woo Rhee 3 , Hae-Jeong Lee 2 , Christopher Soles 2 , David Gidley 4
1 Department of Chemistry, Seoul National University, Seoul Korea (the Republic of), 2 Polymer Division, National Institute of Standards and Technology, Washington, District of Columbia, United States, 3 Department of Chemical Engineering, Sogang University, Seoul Korea (the Republic of), 4 Department of Physics, University of Michigan, Ann Arbor, Michigan, United States

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11:45 AM - F1.5
Matrix Structure of Organo-Silicate Glasses and Thermo-Mechanical Properties of Thin Low-K Films.

Francesca Iacopi 1 , Gerald Beyer 1 , Kristof Houthoofd 2 , Peter Adriaensens 3 , Carlo Waldfried 4 , Steven Demuynck 1 , Youssef Travaly 1 , Salvador Eslava-Fernandez 1 2 , David Gage 5 , Simone Giangrandi 1 , M Rennau 6 , Knut Schulze 6 , Stefan Schulz 6 , Giovanni Carlotti 7 , Reinhold Dauskardt 5
1 , IMEC, Leuven Belgium, 2 Bio-Engineering Dept., Katholieke Universiteit Leuven, Leuven Belgium, 3 Chemistry Dept., Universiteit Hasselt, Diepenbeek Belgium, 4 , Axcelis technologies, Beverly, Massachusetts, United States, 5 Meterials Science and Engineering, Stanford University, Stanford, California, United States, 6 Center for Microelectronics, TU Chemnitz, Chemnitz Germany, 7 Physics Dept., University of Perugia, Chemnitz Italy

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12:00 PM - F1.6
Film Characterization of Ultra Low-k Dielectrics Modified by UV Curing with Different Wavelength Bands.

Masazumi Matsuura 1 , Kinya Goto 1 , Noriko Miura 1 , Shinobu Hashii 2 , Koyu Asai 1
1 , Renesas Technology Corp., Itami Japan, 2 , Renesas Semiconductor Engineering Corp., Itami Japan

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12:15 PM - F1.7
Fracture Property Improvements of a Nanoporous Thin Film via Post Deposition UV Curing.

Jeannette Jacques 1 , Ting Tsui 1 , Andrew McKerrow 1 , Robert Kraft 1
1 Silicon Technology Development, Texas Instruments, Inc., Dallas, Texas, United States

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12:30 PM - F1.8
Characterization of Chemical Bonding in Low-K Dielectric Materials for Interconnect Isolation: A XAS and EELS Study.

Patrick Hoffmann 1 , Dieter Schmeisser 1 , Ehrenfried Zschech 3 , Hans-Juergen Engelmann 3 , Franz Himpsel 2 , Heiko Stegmann 4 , Jonathan Denlinger 5
1 Applied Physics II, Brandenburg University of Technology Cottbus, Cottbus, Brandenburg, Germany, 3 , AMD Saxony LLC & Co KG, Dresden, Saxony, Germany, 2 , University of Wisconsin / Madison, Madison, Wisconsin, United States, 4 , Carl Zeiss NTS GmbH, Oberkochen Germany, 5 , Advanced Light Source, Berkeley, California, United States

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12:45 PM - F1.9
Ultra Low-k Film Deposition by PEVCD Using a Novel Organosilane as a Precursor

Yonghua Xu 1 , Ikuyo Muramoto 1 , Masato Ishikawa 1 , Hideaki Machida 1
1 , Tri Chemical Laboratories Inc., Uenohara, Yamanashi Japan

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F2: Reliability of Low-k Dielectrics
Session Chairs
Alfred Grill
Dorel Toma
Tuesday PM, April 18, 2006
Room 3009 (Moscone West)

2:30 PM - **F2.1
Reliability of Interconnect Dielectrics.

Gaddi Haase 1
1 SiTD, Texas Instruments, Dallas, Texas, United States

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3:00 PM - F2.2
Detection of Copper and Water in low-k dielectrics by Triangular Voltage Sweep measurements.

Ivan Ciofi 1 , Zsolt Tokei 1 , Marco Saglimbeni 1 , Marleen Van Hove 1
1 , IMEC, Leuven Belgium

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3:15 PM - F2.3
Suppression of Moisture-induced Electrical Instabilities in Mesoporous Silica Films Through Molecular Capping.

Amit Singh 1 , Darshan Gandhi 1 , Victor Pushpraj 1 , G. Ramanath 1
1 Materials Science & Engineering, Rensselaer Polytechnic Institute, Troy, New York, United States

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3:30 PM - F2.4
Morphological and Structural Evolution of an Ultra-low-k Dielectric During the Porogen Removal.

Diane Rebiscoul 1 , Helene Trouve 2 , Bruno Remiat 1 , Laurence Clerc 3 , Didier Louis 1 , Gerard Passemard 1
1 DRT/LETI/D2NT/Laboratoire Back End, CEA, Grenoble France, 2 LETI, Rohm and Haas Electronic Materials LLC, Grenoble France, 3 DRT/LETI/DPTS/SDOT , CEA, Grenoble France

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3:45 PM - *
Break

4:15 PM - **F2.5
Effect of Water Diffusion in Organosilicate Glass Film Stacks on Adhesion

Youbo Lin 1 , Ting Tsui 2 , Joost Vlassak 1
1 Division of Engineering & Applied Sciences, Harvard University, Cambridge, Massachusetts, United States, 2 Silicon Technology Development, Texas Instruments, Dallas, Texas, United States

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4:45 PM - F2.6
Moisture Induced Degradation of Porous Low-k Materials.

Mikhail Baklanov 1 , David O'Dwyer 1 , Adam Urbanowicz 1 , Quoc Toan Le 1 , Steven Demuynck 1
1 SPDT, IMEC, Leuven Belgium

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5:00 PM - F2.7
Methodology To Determine The Toughness Of A Brittle Thin Film By Nanoindentation.

Helene Brillet-Rouxel 1 2 , Marc Verdier 2 , Muriel Braccini 2 , Michel Dupeux 2 , Stephane Orain 3
1 Mechanical and Thermal Simulations , STMicroelectronics, Crolles France, 2 , LTPCM (CNRS/INPG/UJF), Grenoble France, 3 , PHILIPS semiconductors , Crolles France

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5:15 PM - F2.8
Supercritical Carbon Dioxide Process to Improve Dielectric and Mechanical Properties of Porous ULK Thin Films.

Julien Beynet 1 , Vincent Jousseaume 2 , Alain Madec 1 , Bruno Remiat 2 , Regis Mercier 3 , N. Dominique Alberola 3 , Gerard Passemard 4
1 , AIR LIQUIDE, Jouy-en-Josas France, 2 , CEA/LETI, Grenoble France, 3 , LMOPS, Le Bourget du Lac France, 4 , STMicroelectronics, Crolles France

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5:30 PM - F2.9
Mechanics and Fracture of Low-k Organosilicate Thin Films: Effects of UV Curing.

David Gage 1 , Eric Guyer 1 , Reinhold Dauskardt 1
1 Materials Science and Engineering, Stanford University, Stanford, California, United States

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5:45 PM - F2.10
Critical and Sub-critical Debonding in Nano-clustering Porous Low-k Films.

Ryan Smith 1 , Chihiro Uchibori 2 , Paul Ho 1
1 Laboratory for Interconnect and Packaging, The University of Texas, Austin, Texas, United States, 2 , Fujitsu Laboratories of America, Inc., Sunnyvale, California, United States

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F3: Poster Session I
Session Chairs
Gaddi   Haase
Mark O'Neill
Joost Vlassak
Wednesday AM, April 19, 2006
Salons 8-15 (Marriott)

9:00 PM - F3.1
Modelling of Thermal Conduction Mechanisms in Amorphous Inter-layer Dielectrics (ILDs).

Manu Shamsa 1 , Patrick Morrow 1 , Shriram Ramanathan 1
1 Components Research, Intel, Hillsboro, Oregon, United States

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9:00 PM - F3.10
Synthesis and Characterization of Nanoporous Ultralow Dielectric Films by Dual Porogen Approach

Jae Hwan Sim 1 , Hyun Wook Ro 2 , Hee-Woo Rhee 3 , David W. Gidely 4 , Do Yeung Yoon 1
1 Department of Chemistry, Seoul National University, Seoul Korea (the Republic of), 2 Polymer Division, National Institute of Standards and Technology, Gaithersburg, Maryland, United States, 3 Department of Chemical Engineering, Sogang University, Seoul Korea (the Republic of), 4 Department of Physics, University of Michigan, Ann Arbor, Michigan, United States

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9:00 PM - F3.11
Mechanical Properties of Organosilicate Glass Coatings

Youbo Lin 1 , Ting Tsui 2 , Joost Vlassak 1
1 Division of Engineering & Applied Sciences, Harvard University, Cambridge, Massachusetts, United States, 2 Silicon Technology Development, Texas Instruments, Dallas, Texas, United States

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9:00 PM - F3.12
Ordered Hydrophoic Mesorpous Furionated Silica Thin Film

Mingming Du 1 , Denis Mueller 2 , Phil Matz 3 , Smith Casey 1 , Pawan Nerusu 1 , Richard Reidy 1
1 Materials Science and Engineering, University of North Texas, Denton, Texas, United States, 2 Physics Department, University of North Texas , Denton, Texas, United States, 3 Silicon Technology Development, Texas Instruments Inc, Dallas, Texas, United States

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9:00 PM - F3.13
Effects of Solution Chemistry on Fracture of Nanoporous Low-k Thin-Films.

Nathan Stein 1 , Reinhold Dauskardt 1
1 Materials Science and Engineering , Stanford University, Stanford, California, United States

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9:00 PM - F3.14
Cu Via Filling Behavior and Electrical Characteristics of the 3D Cu Interconnects for Chip Stack Package

Kwang-Yong Lee 1 , Teck-Su Oh 1 , Tae-Sung Oh 1
1 Materials Science and Engineering, Hongik University, Seoul Korea (the Republic of)

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9:00 PM - F3.15
Low-Temperature Wafer Bonding of PETEOS-to-PETEOS Using Ti as Intermediate.

Jian Yu 1 , Richard Moore 2 , Hui-Feng Li 1 , Sang-Hwui Lee 1 , J. McMahon 1 , Jian-Qiang Lu 1 , Ronald Gutmann 1
1 , Rensselaer Polytechnic Institute, Troy, New York, United States, 2 , University at Albany-SUNY, Albany, New York, United States

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9:00 PM - F3.2
Structures and Properties of an Ultra-Low-k Material: Classical Molecular Dynamics and First-Principles Calculations.

Jiro Ushio 1 , Tomoyuki Hamada 2 , Takahisa Ohno 1 2 , Shin-Ichi Nakao 3 , Manabu Kato 3 , Katsumi Yoneda 3 , Nobuyoshi Kobayashi 3
1 Computational Materials Science Center, National Institute for Materials Science, Tsukuba, Ibaraki, Japan, 2 Collabolative Research Center of Frontier Simulation Software for Industrial Science, Institute of Industrial Science, University of Tokyo, Meguro-ku, Tokyo, Japan, 3 , Semiconductor Leading Edge Technologies, Inc., Tsukuba, Ibaraki, Japan

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9:00 PM - F3.3
Modeling the Impact of Layout Variation on Process Stress in Cu/Low k Interconnects.

Xiaopeng Xu 1 , Dipu Pramanik 1 , Greg Rollins 1
1 TCAD, Synopsys, Inc., Mountain View, California, United States

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9:00 PM - F3.4
Low-k Dielectric Obtained by Noble Gas Implantation in Silicon Oxide.

Hanan Assaf 1 , Esidore Ntsoenzok 1 2 , Marie Odile Ruault 3 , S. Ashok 4
1 , CERI-CNRS, Orleans France, 2 , LESI, University of orleans, Chartres France, 3 , CSNSM, CNRS-IN2P3, Orsay France, 4 departement of Engineering Science, Pennsylvania state university, Pennsylvania , Pennsylvania, United States

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9:00 PM - F3.5
Channel Cracking Technique For Toughness Measurement Of Sioch Low-K Films.

Helene Brillet-Rouxel 1 2 , Michel Dupeux 2 , Muriel Braccini 2 , Stephane Orain 3
1 Mechanical and Thermal Simulations , STMicroelectronics, Crolles France, 2 , LTPCM (CNRS/INPG/UJF), Grenoble France, 3 , PHILIPS semiconductors, crolles France

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9:00 PM - F3.6
Thermal and Dielectric Stability of Parylene X.

Jay Senkevich 1 , Brad Carrow 1 , Pei-I Wang 2
1 , Brewer Science Inc., Rolla, Missouri, United States, 2 , Rensselaer Polytechnic Institute, Troy, New York, United States

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9:00 PM - F3.8
Zeolite Film Properties Dependence on Particle Size.

Salvador Eslava-Fernandez 1 , M.R. Baklanov 1 , F. Iacopi 1 , S.H. Brongersma 1 , C. Kirschhock 2 , K. Maex 1
1 , IMEC, Leuven Belgium, 2 Centrum voor Oppervlaktechemie en Katalyse, K. U. Leuven, Leuven Belgium

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9:00 PM - F3.9
The Electrical and Chemical Properties of Ultra Low-k SiOCH Film Deposited by PECVD using decamethyl-cyclopentasiloxane and cyclohexane as the Precursors.

Jaeyoung Yang 1 , Sungwoo Lee 1 , Heeyeop Chae 2 , Donggeun Jung 1
1 Physics, Sungkyunkwan University, Suwon, Kyunggi, Korea (the Republic of), 2 Chemical Engineering, Sungkyunkwan University, Suwon, Kyunggi, Korea (the Republic of)

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9:00 PM - F3
F3.7 Transferred to F1.7

Show Abstract

2006-04-19   Show All Abstracts

Symposium Organizers

Ting Y. Tsui Texas Instruments, Inc.
Young-Chang Joo Seoul National University
Alex A. Volinsky University of South Florida
Lynne Michaelson Vishay Electro-Films
Michael Lane IBM T.J. Watson Research Center
F4: Low-k Dielectrics: Processing and Integration Issues
Session Chairs
Francesca Iacopi
Alex Volinsky
Wednesday AM, April 19, 2006
Room 3009 (Moscone West)

9:30 AM - **F4.1
Chemical, Mechanical and Electrical Properties of Non-Thermally Cured CVD Low-k Films for a 65nm Technology.

Kurt Junker 1 , Gregory Imbert 2 , Aurelie Humbert 3 , Laurent-Luc Chapelon 2 , Yannick Le-Friec 2 , Julien Vitiello 4 , Anissa Lagha 5 , Michael Turner 1 , Michelle Rasco 1 , Cindy Goldberg 5 , Narayanan Ramani 1
1 , Freescale Semiconductor, Austin, Texas, United States, 2 , STMicroelectronics, Crolles France, 3 , Philips Research Leuven, Leuven Belgium, 4 , Philips Semiconductor, Crolles France, 5 , Freescale Semiconductor, Crolles France

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10:00 AM - F4.2
Challenges of Ultra Low-k Dielectric Measurement and Plasma Damage Assessment.

Thomas Abell 1 , Jeffery Lee 2 , Mansour Moinpour 1
1 , Intel Corp., Santa Clara, California, United States, 2 , Intel at IMEC, Leuven Belgium

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10:15 AM - F4.3
The Effect of Plasma Damage on the Material Composition and Electrical Performance of Two Generations of SiOCH Low k Films.

Aurelie Humbert 1 , D Ernur 1 , R.J.O.M Hoofman 1
1 , Philips Research Leuven, Leuven Belgium

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10:30 AM - F4.4
Tailored Repair of low-k Dielectrics Using Mono- and Di- Functional Silanes Dissolved in Supercritical CO2.

Casey Smith 1 , Richard Reidy 1 , Dennis Mueller 2 , Phil Matz 3
1 Materials Science, University of North Texas, Denton, Texas, United States, 2 Physics, University of North Texas, Denton, Texas, United States, 3 Silicon Technology Development , Texas Instruments Inc., Dallas, Texas, United States

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10:45 AM - *
Break

11:15 AM - F4.5
Evaluation of Damages and Pore-sealing Capabilities of Oxidizing and Reducing Etch Plasmas for Single and Dual Damascene Patterning of Porous Ultra-low-k Materials.

Emmanuel Ollier 1 , Mathieu Clain 2 , Robert Fox 2 , Philippe Brun 3 , Stephane Jullian 1
1 Crolles2Alliance, Philips Semiconductors Crolles R&D, Crolles France, 2 Crolles2Alliance, Freescale Semiconductors, Crolles France, 3 Crolles2Alliance, CEA-Leti, Crolles France

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11:30 AM - F4.6
PECVD Versus Spin-on to Perform Porous ULK for Advanced Interconnects: Chemical Composition, Porosity and Mechanical Behavior.

Vincent Jousseaume 1 , Charles Le Cornec 1 , Frederic Ciaramella 1 , Laurent Favennec 2 , Aziz Zenasni 1 , Gurvan Simon 1 , Jean Paul Simon 3 , Guillaume Gerbaud 4 , Gerard Passemard 2
1 , CEA-LETI-D2NT, Grenoble France, 2 , STMicroelectronics, Grenoble France, 3 , CNRS-LTPCM, St Martin d'Heres France, 4 , CEA-DRFMC, Grenoble France

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11:45 AM - F4.7
Fracture Properties of Porous MSSQ Films: Impact of Porogen Loading and Burnout.

Markus Ong 1 , Vincent Jousseaume 2 , Sylvain Maitrejean 2 , Reinhold Dauskardt 1
1 Materials Science and Engineering, Stanford University, Stanford, California, United States, 2 , CEA-LETI, Grenoble France

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12:00 PM - F4.8
New Spin-On Oxycarbosilane Low-K Dielectric Materials With Exceptional Mechanical Properties.

Geraud Dubois 1 , Robert Miller 1 , Willi Volksen 1 , Teddie Magbitang 1
1 Advanced Organic Materials, IBM, San Jose, California, United States

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12:15 PM - F4.9
Generation of Porosity in Spin-on Oxycarbosilane Ultra low-κ Dielectric Films.

Marcus Worsley 1 , Geraud Dubois 2 , Stacey Bent 1 , Teddie Magbitang 2 , Robert Miller 2 , Willi Volksen 2 , Mark Sherwood 2
1 Chemical Engineering, Stanford University, Stanford, California, United States, 2 Almaden Research Center, IBM, San Jose, California, United States

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12:30 PM - F4.10
Effects of Dielectric Thermal Expansion and Elastic Modulus on the Stress and Deformation Fields in Copper Interconnects.

Yu-Lin Shen 1
1 Mechanical Engineering, University of New Mexico, Albuquerque, New Mexico, United States

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12:45 PM - F4.11
Comparison of the Fracture Behavior of Brittle ILD Films used in the BEOL in Dry and Wet Environment using Nanoindentation.

Eva Simonyi 1 , Michael Lane 1 , Erick Liniger 1 , Alfred Grill 1
1 , IBM, Yorktown Heights, New York, United States

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F5: Barrier Metals and Copper Plating
Session Chairs
Romano Hoofman
Lynne Michaelson
Wednesday PM, April 19, 2006
Room 3009 (Moscone West)

2:30 PM - **F5.1
Cu Alloy Metallization for Self-Forming Barrier Process

Junichi Koike 1
1 Dept. of Materials Science, Tohoku University, Sendai Japan

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3:00 PM - F5.2
In-situ Plasma-enhanced Atomic Layer Deposition of Tantalum Nitride Liner and Ruthenium Seed Materials for Copper Interconnect Applications.

Oscar van der Straten 1 , Stephen Rossnagel 1 , Ken Rodbell 1
1 T.J. Watson Research Center, IBM Research, Yorktown Heights, New York, United States

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3:15 PM - F5.3
Thin, Continuous and Highly Conformal Copper Films by Reduction of ALD Copper Nitride.

Zhengwen Li 1 , Roy Gordon 1
1 Chemistry and Chemical Biology, Harvard University, Cambridge, Massachusetts, United States

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3:30 PM - F5.4
Evaluation of Integrity and Barrier Performance of Ultra Thin ALD-diffusion Barriers on PECVD SiO2 and SiOCH low-k Dielectrics for Cu Metallization.

Ki-Su Kim 1 , Moon-Sang Lee 1 , Sung-Soo Yim 1 , Ki-Bum Kim 1 , Hyung-Sang Park 2
1 School of Materials Science and Engineering, Seoul National University, Seoul Korea (the Republic of), 2 , ASM Genitech, Inc., Daejeon Korea (the Republic of)

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3:45 PM - *
Break

4:15 PM - F5.5
Characteristics of cobalt and cobalt silicide film deposited by Remote Plasma ALD method

Keunjun Kim 1 , Keunwoo Lee 1 , Sejin Han 1 , Wooho Jeong 1 , Hyeongtag Jeon 1
1 , Hanyang Univ., Seoul Korea (the Republic of)

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4:45 PM - F5.7
Real Time Study of Cu Diffusion through Ru Thin Film byPhotoemission Electron Microscopy (PEEM)

Wei Wei 1 , Xiong Gang 2 , Y.-M. Sun 1 , Alan Joly 2 , Kenneth Beck 2 , J. White 1 , Wayne Hess 2
1 Chemistry and Biochemistry, University of Texas at Austin, Austin, Texas, United States, 2 , Pacific Northwest National Laboratory, Richland, Washington, United States

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5:00 PM - F5.8
Copper Electroplating on Zero-Thickness ALD Platinum for Nanoscale Computer Chip Interconnects.

Alain Kaloyeros 1 , Yu Zhu 1 , Kathleen Dunn 1 , Chris Miller 1 , Michael Breslin 1
1 college of nanoscale science and engineering, the university at albany-suny, albany, New York, United States

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5:15 PM - F5.9
Thermal Oxidation of Ni and Co Alloys Formed by Electroless Plating.

Jeff Gambino 1 , Igor Ivanov 2 , Ed Adams 1 , Scott Hazel 1 , Dave Meatyard 1 , Phil Pokrinchak 1 , Fen Chen 1 , Pat DeHaven 3
1 , IBM, Essex Junction, Vermont, United States, 2 , Blue29, Inc., Sunnyvale, California, United States, 3 , IBM, Hopewell Junction, New York, United States

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5:30 PM - F5.10
Electroless CoWP as a Catalyst of Self-Aligned CNT Growth for Future CMOS Interconnect Via Applications

Tzu-Chun Tseng 1 , Tri-Rung Yew 1
1 Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu Taiwan

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5:45 PM - F5.11
Thin and Smooth Cu Seed Layer Deposition using the Reduction of Low Temperature Deposited Cu2O.

Hoon Kim 1 , Yasuhiko Kojima 2 , Hiroshi Sato 2 , Naoki Yoshii 2 , Shigetoshi Hosaka 2 , Yukihiro Shimogaki 1
1 the materials engineering, The Univ. of Tokyo, Bunkyo ku, Tokyo, Japan, 2 Technology Development Center, Tokyo Electron AT Limited, 650 Mitsuzawa, Hosaka-cho, Nirasaki-city, Yamanashi, Japan

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2006-04-20   Show All Abstracts

Symposium Organizers

Ting Y. Tsui Texas Instruments, Inc.
Young-Chang Joo Seoul National University
Alex A. Volinsky University of South Florida
Lynne Michaelson Vishay Electro-Films
Michael Lane IBM T.J. Watson Research Center
F6: Copper Interconnects Relibility
Session Chairs
Gaddi   Haase
Young-Chang Joo
Thursday AM, April 20, 2006
Room 3009 (Moscone West)

9:30 AM - **F6.1
Scaling of Statistical and Physical Electromigration Characteristics in Cu Interconnects

Martin Gall 1 , Meike Hauschildt 1 , Patrick Justison 1 , Koneru Ramakrishna 1 , Richard Hernandez 1 , Matthew Herrick 1 , Lynne Michaelson 2 , Hisao Kawasaki 2
1 CMOS Platform Device Development, Freescale Semiconductor Inc., Austin, Texas, United States, 2 Advanced Products Research and Development Laboratory, Freescale Semiconductor Inc., Austin, Texas, United States

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10:00 AM - F6.2
Resistivity of Fine Cu Interconnects at Low Temperatures: Understanding of the Origin of the Size Effect.

Wenqi Zhang 1 2 , Sywert Brongersma 1 , zhen Li 1 , dagang Li 2 , Olivier Richard 1 , gerald beyer 1 , karen maex 1 2
1 , IMEC, leuven Belgium, 2 E.E. Dept., K.U.Leuven, leuven Belgium

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10:15 AM - F6.3
In-Situ Characterizarion Of Interfaces Induced Resistivity In Nanometric Dimensions.

Hagay Marom 1 , Moshe Eizenberg 1
1 , Technion - Israel Institute of Technology, Haifa Israel

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10:30 AM - F6.4
In-situ Grain Growth Investigation of Copper Electrodeposits for ULSI.

Heung Nam Han 1 , Hyo-Jong Lee 1 , Do Hyun Kim 1 , Ui-hyoung Lee 1 , Pil-Ryung Cha 2 , Kyu Hwan Oh 1
1 Material Science and Engineering, Seoul National University, San 56-1, Shinrim-dong, Kwanak-gu, Seoul, Korea (the Republic of), 2 School of Advanced Materials Engineering, Kookmin University, 861-1, Chongnung-dong, Songbuk-gu, Seoul, Korea (the Republic of)

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10:45 AM - *
Break

11:15 AM - **F6.5
Electromigration-Induced Plastic Deformation in Cu Damascene Interconnect Lines as Revealed by Synchrotron X-Ray Microdiffraction.

Arief Budiman 1 , N. Tamura 2 , B. Valek 2 , K. Gadre 3 , J. Maiz 3 , R. Spolenak 4 , J. Patel 1 2 , William Nix 1
1 Materials Science & Engineering, Stanford University, Stanford, California, United States, 2 Advanced Light Source (ALS), Lawrence Berkeley National Laboratory (LBNL), Berkeley, California, United States, 3 , Intel Corporation, Hillsboro, Oregon, United States, 4 , ETH Swiss Federal Institute of Technology Zurich, Zurich Switzerland

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11:45 AM - F6.6
Thermal and Electromigration-Induced Strains in Copper Conductor Lines: X-ray Microbeam Measurements and Analysis

Gan Wang 1 , Hongqing Zhang 1 , G. Cargill 1 , C. Hu 2 , W. Yang 3 , B. Larson 3 , G. Ice 3
1 Materials Science and Engineering, Lehigh University, Bethlehem, Pennsylvania, United States, 2 , IBM Research, Yorktown Heights, New York, United States, 3 , Oak Ridge National Lab., Oak Ridge, Tennessee, United States

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12:00 PM - F6.7
Effect of Cu Migration in a Field Induced Dielectric Failure.

Sang-Soo Hwang 1 , Sung-Yup Jung 1 , Young-Chang Joo 1
1 School of Materials Science & Enginnering, Seoul National University, Seoul Korea (the Republic of)

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12:15 PM - F6.8
Electrical Resistance Anomalies During Electromigration Testing of Cu Conductor Lines: Examples of Local Melting?

H. Zhang 1 , G. Wang 1 , G. Cargill 1
1 Materials Science and Engineering, Lehigh University, Bethlehem, Pennsylvania, United States

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12:30 PM - F6.9
Influence of Grain Orientation on the Microstructural Characterization in Cu During (self)-anneal Using a Surface Acoustic Wave Technique.

Atsuko Sekiguchi 1 , Kris Vanstreels 2 , Steven Demuynck 1 , Laure Carbonell 1 , Jan D`Haen 2 , Karen Maex 1 , Sywert Brongersma 1
1 , IMEC, Leuven Belgium, 2 , IMOMEC, Diepenbeek Belgium

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12:45 PM - F6.10
Barrier Formation and Thickness Effects on Electromigration Reliability of Cu/Low-k Interconnects.

Jung Woo Pyun 1 , Won-Chong Baek 1 , Paul Ho 1 , Larry Smith 2 , Kyle Neuman 2 , Klaus Pfeifer 2
1 , The University of Texas at Austin, Austin, Texas, United States, 2 , SEMATECH, Austin, Texas, United States

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F7: Advanced Metrology Techniques: Metallization
Session Chairs
Seung-Hyun Rhee
Thursday PM, April 20, 2006
Room 3009 (Moscone West)

2:30 PM - **F7.1
New Characterization Metrology for low-k/Cu Interconnect Integration: Voltamometry and Its Applications

Choong-Un Kim 1 , DongMei Meng 1 , Nancy Michael 1 , Y.-J. Park 2 , Laura Matz 2 , Sri Satyanarayana 3
1 Materials Science and Engineering, The University of Texas at Arlington, Arlington, Texas, United States, 2 , Texas Instruments, Dallas, Texas, United States, 3 , Sematech, Austin, Texas, United States

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3:00 PM - F7.2
Feasibility of Thermal Microscopy of Embedded Voids in Layered Geometries.

Sanjiv Sinha 1 , Shriram Ramanathan 2
1 Systems Technology Lab, Intel Corporation, Portland, Oregon, United States, 2 Components Research, Intel Corporation, Portland, Oregon, United States

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3:15 PM - F7.3
Advanced X-ray Fluorescence: and Innovative Interconnect and Process Metrology Solution for 45 nm and Beyond.

Jean Paul Gueneau de Mussy 1 , Gerardo Bottiglieri 1 , Nancy Heylen 1 , Laure Carbonell 1 , Jeremy O Dell 2 , Dileep Agnihotri 2 , Alex Tokar 3 , Isaac Mazor 3
1 SPDT/ITS, IMEC, Leuven Belgium, 2 , Jordan Valley, Austin, Texas, United States, 3 , Jordan Valley, Migdal HaEmek Israel

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3:30 PM - F7.4
A Study on the Stepwise Cross-sectional Crystalline Analyses of the Stress Induced Voiding in Cu Interconnect by Focused Ion Beam and Electron Backscattered Diffraction

Hyo-Jong Lee 1 , Kyu Hwan Oh 1 , Heung Nam Han 1 , Suk Hoon Kang 1 , Jeong-Yun Sun 1 , Sun-Jung Lee 2 , Hong-Jae Shin 2
1 Material Science and Engineering, Seoul National University, San 56-1, Shinrim-dong, Kwanak-gu, Seoul, Korea (the Republic of), 2 Advanced Process Development Team, System LSI Business, Samsung Electronics Co., Ltd., San 24, Nongseo-ri, Kiheung-eup, Youngin-city, Kyunggi-do, Korea (the Republic of)

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3:45 PM - F7
BREAK

F8: Stress in Copper Interconnects
Session Chairs
Junichi Koike
Thursday PM, April 20, 2006
Room 3009 (Moscone West)

4:15 PM - **F8.1
The Effects of Interconnect Structures on Thermal Mechanical Stress of Cu lines and the Impact of Unstressed Lattice Spacing Determination.

Seung-Hyun Rhee 1 , I. C. Noyan 2 , Conal Murray 3 , Paul Besser 4
1 AMD Logic Technology Development, Advanced Micro Devices, ASTA (AMD/IBM/Sony/Toshiba) Alliance, Hopewell Junction, New York, United States, 2 Dept. of Applied Physics & Applied Mathematics, Columbia University, New York, New York, United States, 3 T J Watson Laboratory, IBM Research Division, Yorktown Heights, New York, United States, 4 Advanced Process Development, Technology Dev. Group, AMD, Sunnyvale, California, United States

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4:45 PM - F8.2
Plastic Deformation of Cu in Thin Films, Interconnect Lines and Other Confined Structures.

Joost Vlassak 1 , Y. Xiang 1
1 Division of Engineering and Applied Sciences, Harvard University, Cambridge, Massachusetts, United States

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5:00 PM - F8.3
Kinetics of Void Drift in Copper Interconnects

Zung-Sun Choi 1 , Reiner Moenig 1 , Carl Thompson 1
1 Materials Science and Engineering, MIT, Cambridge, Massachusetts, United States

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5:15 PM - F8.4
Theoretical Analysis Of Current-Driven Interactions Between Voids In Metallic Interconnect Lines.

Jaeseol Cho 1 , M. Rauf Gungor 1 , Dimitrios Maroudas 1
1 Department of Chemical Engineering, University of Massachusetts, Amherst, Massachusetts, United States

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F9: Poster Session II
Session Chairs
Junichi Koike
Michael Lane
Lynne Michaelson
Alex Volinsky
Friday AM, April 21, 2006
Salons 8-15 (Marriott)

9:00 PM - F9.1
Investigation of W-Ge-N Deposited on Ge as a Diffusion Barrier for Cu Metallization.

Seemant Rawal 1 , David Norton 1 , Tim Anderson 2 , Lisa McElwee White 3
1 Materials Science and Engineering, University of Florida, Gainesville, Florida, United States, 2 , Chemical Engineering, University of Florida, Gainesville, Florida, United States, 3 , Department of Chemistry, University of Florida, Gainesville, Florida, United States

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9:00 PM - F9.10
The Copper Corrosion and Sulfur Contamination Generated by a Three-step Copper Chemical-mechanical Polishing Process.

Chun-Ping Liu 1 , Y. S. Ho 2 , T. C. Hu 3 , Bae-Heng Tseng 1
1 Institute of Materials Science and Engineering, National Sun Yat-Sen University, Kaohsiung Taiwan, 2 Department of Electrical Engineering, National Kaohsiung University of Applied Science, Kaohsiung Taiwan, 3 Institute of Engineering Management, National Chen Kung University, Tainan Taiwan

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9:00 PM - F9.11
Passive Film Growth and Removal during Copper post-CMP Cleaning.

Jun Liu 1 , Darryl Peters 1 , Mike Hughes 1 , Monica Hilgarth 1 , Mackenzie King 1
1 MLS R&D, ATMI, Inc., Danbury, Connecticut, United States

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9:00 PM - F9.12
Slurry Chemistries for Chemical Mechanical Polishing of Gold.

Saurabh Agrawal 1 2 , Jay Jayashankar 1
1 Seagate Research, Seagate Technology, Pittsburgh, Pennsylvania, United States, 2 Materials Science and Engr., Rensselaer Polytechnic Institute, Troy, New York, United States

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9:00 PM - F9.14
Electrochemical Characteristics of CMP Copper in a Low Abrasive Slurry.

Amanda Bozak 1 , Arthur Diaz 2 , Ashwani Rawat 1 , Hokkin Choi 1 , Mansour Moinpour 1
1 , Intel Corp., Santa Clara, California, United States, 2 Department of Chemical and Materials Engineering, San Jose State University, San Jose, California, United States

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9:00 PM - F9.15
Investigation of the Rate of Copper Deposition onto Silicon via Galvanic Displacement.

Calvin daRosa 1 , Enrique Iglesia 1 , Roya Maboudian 1
1 Chemical Engineering, University of California, Berkeley, California, United States

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9:00 PM - F9.16
Design an Electroplated Frame Freestanding Specimen for Microtensile Testing of Submicron thin TaN and Cu Film.

Ming-Tzer Lin 1 2 , Chi-Jia Tong 1 , Chung-Hsun Chiang 1
1 Institute of Precision Engineering , National Chung Hsing University, Taichung Taiwan, 2 Center for Nano Science and Nanotechnology , National Chung Hsing University, Taichung Taiwan

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9:00 PM - F9.17
Non-destructive Deep Embedded Copper Interconnection Defects Measurements Using Photoacoustic Microscope.

Lu Xu 1 , Donnacha Lowney 1 , Patrick McNally 1
1 School of Electronic Engineering, Dublin City University, Dublin Ireland

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9:00 PM - F9.18
Relationship Between Interfacial Adhesion and Dielectric Reliability of Cu Alloy Films.

Seol-Min Yi 1 , Kwang-Ho Jang 1 , Yong-Hak Huh 2 , Young-Bae Park 3 , Young-Chang Joo 1
1 School of Materials Science and Engineering, Seoul National University, Seoul Korea (the Republic of), 2 Strength Evaluation Group, Korea Research Institute of Standards and Science, Daejeon Korea (the Republic of), 3 School of Materials Science and Engineering, Andong National University, Andong Korea (the Republic of)

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9:00 PM - F9.19
Effect Of Overburden Layer On Microstructure In Damascene Cu Lines.

Jong-Min Paik 1 , Young-Hoo Kim 1 , Jung-Kyu Jung 1 , Young-Chang Joo 1
1 School of Material Science & Engineering, Seoul National University, Seoul Korea (the Republic of)

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9:00 PM - F9.2
Comparison of Ru/Ta and Ru/TaN as Barrier Stack for Copper Metallization.

Xin-ping Qu 1 , Jing-Jing Tan 1 , Qi Xie 1 , Guo-Ping Ru 1 , Bing-zong Li 1
1 Department of microelectronics, Fudan University, Shanghai China

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9:00 PM - F9.20
Novel Reducing Chemistry for Supercritical Fluid Deposition of Copper.

Takeshi Momose 1 , Tomohiro Ohkubo 1 , Masakazu Sugiyama 2 , Yukihiro Shimogaki 1
1 Materials Engineering, the University of Tokyo, Tokyo, Tokyo, Japan, 2 Electronic Engineering, the University of Tokyo, Tokyo Japan

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9:00 PM - F9.22
Computer Simulations of Grain Boundary Grooving and Cathode Voiding in Bamboo-like Metallic Interconnects by Surface Drift-diffusion under the Capillary and Electromigration Forces.

Tarik Ogurtani 1 , Oncu Akyildiz 1
1 Metallurgy&Materials Engineering, Middle East Technical University, Ankara Turkey

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9:00 PM - F9.23
Feasibility Study for Usage of Diluted Fluorine for Chamber Clean Etch Applications as an Environmental Friendly Replacement of NF3.

Ronald Hellriegel 2 , Bernd Hintze 2 , Matthias Albert 1 , Johann Bartha 1 , Michael Pittroff 3
2 , Infineon Technologies, Dresden Germany, 1 , TU-Dresden, Dresden Germany, 3 , Solvay Fluor GmbH, Hannover Germany

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9:00 PM - F9.3
A Novel MO Precursor for Metal Tantalum and Tantalum Nitride Film.

Kenichi Sekimoto 1 2 , Taishi Furukawa 1 2 , Norikaki Oshima 2 1 , Ken-ichi Tada 1 , Tetsu Yamakawa 1
1 , Sagami Chemical Research Center, Ayase, Kanagawa, Japan, 2 Tokyo Research Center, Tosoh Corporation, Ayase, Kanagawa, Japan

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9:00 PM - F9.4
Pulsed CVD of Thin Ru metal Films Using an Amidinate Precursor.

huazhi li 1 , Titta Aaltonen 1 , Roy Gordon 1
1 Chemistry, Harvard University, cambridge, Massachusetts, United States

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9:00 PM - F9.5
Post Etch/Ash Cleaning Process Development and Integration into 65nm Cu/low-k Dual Damascene Process Flow using Metal Hard Mask

Miao Lin 1
1 Advanced Etching Dept., UMC, Tainan Science Park, Sinshih Township, Tainan County Taiwan

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9:00 PM - F9.6
A Ruthenium Seed Layer and Copper Deposited by Electrochemical Plating.

Hyung-Il Kim 1 , Kim Young-Soon 1 , Chul-Hee Jeon 1 , Young-Mo Kim 1 , Hyung-Kee Seo 1 , Choong-Un Kim 2 , Hyung-Shik Shin 1
1 School of Chemical Engineering, Chonbuk National University, Jeonju, Jellabuk-do, Korea (the Republic of), 2 Material Science and Engineering, University of Texas-Arlington, Arlington, Texas, United States

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9:00 PM - F9.7
Cu Resistivity in Narrow lines: Dedicated Experiments for Model Optimization.

Sylvain Maitrejean 1 , Roland Gers 1 , Thierry Mourier 1 , Alain Toffoli 1 , Gerard Passemard 2
1 , CEA LETI, Grenoble France, 2 , STMicroelectronics, Crolles France

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9:00 PM - F9.8
Low Temperature Plasma Etching of Copper for Minimizing Size Effects in sub-100 nm Features

Nagraj Kulkarni 1 , Dennis Hess 2 , Galit Levitin 2 , Prabhakar Tamirisa 2
1 Metals & Ceramics, Oak Ridge National Laboratory, Knoxville, Tennessee, United States, 2 School Of Chemical & Biomolecular Engineering, Georgia Institute of Technology, Atlanta, Georgia, United States

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9:00 PM - F9.9
Improvement of Barrier Properties of TaN Film by Plasma Enhanced Atomic Layer Deposition

In Cheol Baek 1 , Han-choon Lee 1 , Jae-Won Han 1 , Kee-Ho Kim 1 , Soo Hyun Kim 2 , Sahng Kyoo Lee 2
1 Advanced Nano-tech Development, DongbuAnam Semiconductor, Eumseong-gun Korea (the Republic of), 2 Advanced Development Team, IPS Ltd., Pyeongtaek Korea (the Republic of)

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2006-04-21   Show All Abstracts

Symposium Organizers

Ting Y. Tsui Texas Instruments, Inc.
Young-Chang Joo Seoul National University
Alex A. Volinsky University of South Florida
Lynne Michaelson Vishay Electro-Films
Michael Lane IBM T.J. Watson Research Center
F10: Future Interconnects
Session Chairs
Choong-Un Kim
Friday AM, April 21, 2006
Room 2004 (Moscone West)

9:30 AM - **F10.1
Benefits and Trade-offs in Multi-Level Air Gap Integration.

Romano Hoofman 1 , Roel Daamen 1 , Viet Nguyenhoang 1 , Julien Michelon 1 , Laurent Gosset 2 , Vincent Arnal 3 , Jean de Pontcharra 4 , Phillippe Lyan 4 , Frederic Gaillard 4 , David Bouchu 4 , Rudy Caluwaerts 5 , Christophe Bruynseraede 5 , Gerald Beyer 5
1 , Philips Research Leuven, Leuven Belgium, 2 , Philips Semiconductors R&D, Crolles France, 3 , STMicroelectronics, Crolles France, 4 , CEA-LETI, Grenoble France, 5 , IMEC, Leuven Belgium

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10:00 AM - F10.2
Routes to the Formation of Air Gap Structures Using PECVD.

Raymond Vrtis 1 , Dingjun Wu 1 , Mark O'Neill 1 , Mary Haas 1 , Scott Weigel 1 , Eugene Karwacki 1
1 Electronics, Air Products and Chemicals Inc., Allentown, Pennsylvania, United States

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10:15 AM - F10.3
Growth of Individual Vertically Aligned Nanotubes for Interconnects.

Mohammad Kabir 1 , R. E. Morjan 2 , P Lundgren 1 , O. A. Nerushev 2 , S. bengtsson 1 , P. Enoksson 1 , E. E. B. Campbell 2
1 Microtechnology and Nanoscience, Chalmers University of Technology, Gothenburg Sweden, 2 Dept. of Experimental Physics, Gothenburg University and Chalmers University of Technology, Gothenburg, Gothenburg, Sweden

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10:30 AM - F10.4
A Deep Silicon Tapered via Etch Process for Through-wafer Interconnects in Three Dimensional Integrated Circuits.

Nagarajan Ranganathan 1 , Krishnamachar Prasad 2 , Dayong Lee 2 , Narasimhan Balasubramanian 1
1 , Institute of Microelectronics, Singapore Singapore, 2 School of Electrical & Electronic Engineering, Nanyang Technological University, Singapore Singapore

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10:45 AM - F10.5
Deep Sub-Micron Wafer-to-Wafer Self-Alignment for Wafer-Level 3D ICs

Sang Hwui Lee 1 , Frank Niklaus 2 , Ravi Kumar 1 , Hui-feng Li 1 , J. Jay McMahon 1 , Jian Yu 1 , James Lu 1 , Timothy Cale 1 , Ronald Gutmann 1
1 CIE, RPI, Troy, New York, United States, 2 , KTH, Stockholm Sweden

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11:00 AM - F10
BREAK

F11: Advanced Metrology Techniques: Dielectrics
Session Chairs
Do Y. Yoon
Friday PM, April 21, 2006
Room 2004 (Moscone West)

11:30 AM - F11.1
Elastic Properties Measurements of Porous ULK : a Comparison Between Nanoindentation and Brillouin Light Scattering.

Frederic Ciaramella 1 , Giovanni Carlotti 3 , Vincent Jousseaume 1 , Marc Verdier 2 , Gianni Socino 3 , Sylvain Maitrejean 1 , Aziz Zenasni 1 , Charles Le Cornec 1 , Gerard Passemard 4
1 D2NT/LBE, CEA-LETI, Grenoble France, 3 Dipartimento Di Fisica, INFM, Perugia Italy, 2 LTPCM, CNRS, Grenoble France, 4 , STMicroelectronics, Crolles France

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