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2006 MRS Spring Meeting Logo2006 MRS Spring Meeting & Exhibit



April 17-21, 2006
| San Francisco
Meeting Chairs: J. Charles Barbour, Paul S. Drzaic, Gregg S. Higashi, Viola Vogel

Symposium F : Materials, Technology, and Reliability of Low-k Dielectrics and Copper Interconnects

2006-04-18   Show All Abstracts

Symposium Organizers

Ting Y. Tsui Texas Instruments, Inc.
Young-Chang Joo Seoul National University
Alex A. Volinsky University of South Florida
Lynne Michaelson Vishay Electro-Films
Michael Lane IBM T.J. Watson Research Center
F1: Processing and Characterizations of Low-k Dielectrics
Session Chairs
Michael Lane
Joost Vlassak
Tuesday PM, April 18, 2006
Room 3009 (Moscone West)

9:30 AM - **F1.1
Development of Ultralow-k SiCOH Dielectrics with K Values Down to 1.80.

Alfred Grill 1 , Vishnubhai Patel 1 , Son Nguyen 1 , Deborah Neumayer 1 , Muthumanickam Sankarapandian 1 , Yuri Ostrovski 1 , Eric Liniger 1 , Eva Simonyi 1
1 , IBM - T.J. Watson Research Center, Yorktown Heights, New York, United States

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10:00 AM - **F1.2
Impact of Pore Size and Morphology of Porous Organosilicate Glasses on Integrated Circuit Manufacturing.

Mark O'Neill 1 , Raymond Vrtis 1 , Brian Peterson 2 , Mary Haas 1 , Scott Weigel 1 , Dingjun Wu 1 , Mark Bitner 1 , Eugene Karwacki 1
1 Electronics Technology, Air Products and Chemicals, Inc., Allentown, Pennsylvania, United States, 2 Computational Modeling Center, Air Products and Chemicals, Inc., Allentown, Pennsylvania, United States

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10:30 AM - F1.3
Pore Engineering: Ultra Low k Porous SiCOH For 45nm And Beyond.

Sang Ahn 1 , Josephine Chang 1 , Thomas Nowak 1 , Nagarajan Rajagopalan 1 , Kangsub Yim 1 , Khaled Elsheref 1 , Alex Demos 1 , Sanjeev Jain 1 , Derek Witty 1 , Hichem MSaad 1
1 , Applied Materials, Inc., Santa Clara, California, United States

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10:45 AM - *
Break

11:15 AM - **F1.4
Novel Polysilsesquioxane Systems for Ultralow-Dielectric Films with High Modulus, Low CTE, and Closed-Pore Morphology

Do Yoon 1 , Hyun Wook Ro 2 , Jie Hye Park 1 , Jae Hwan Shim 1 , Eun Su Park 1 , Jin-Kyu Lee 1 , Hee-Woo Rhee 3 , Hae-Jeong Lee 2 , Christopher Soles 2 , David Gidley 4
1 Department of Chemistry, Seoul National University, Seoul Korea (the Republic of), 2 Polymer Division, National Institute of Standards and Technology, Washington, District of Columbia, United States, 3 Department of Chemical Engineering, Sogang University, Seoul Korea (the Republic of), 4 Department of Physics, University of Michigan, Ann Arbor, Michigan, United States

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11:45 AM - F1.5
Matrix Structure of Organo-Silicate Glasses and Thermo-Mechanical Properties of Thin Low-K Films.

Francesca Iacopi 1 , Gerald Beyer 1 , Kristof Houthoofd 2 , Peter Adriaensens 3 , Carlo Waldfried 4 , Steven Demuynck 1 , Youssef Travaly 1 , Salvador Eslava-Fernandez 1 2 , David Gage 5 , Simone Giangrandi 1 , M Rennau 6 , Knut Schulze 6 , Stefan Schulz 6 , Giovanni Carlotti 7 , Reinhold Dauskardt 5
1 , IMEC, Leuven Belgium, 2 Bio-Engineering Dept., Katholieke Universiteit Leuven, Leuven Belgium, 3 Chemistry Dept., Universiteit Hasselt, Diepenbeek Belgium, 4 , Axcelis technologies, Beverly, Massachusetts, United States, 5 Meterials Science and Engineering, Stanford University, Stanford, California, United States, 6 Center for Microelectronics, TU Chemnitz, Chemnitz Germany, 7 Physics Dept., University of Perugia, Chemnitz Italy

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12:00 PM - F1.6
Film Characterization of Ultra Low-k Dielectrics Modified by UV Curing with Different Wavelength Bands.

Masazumi Matsuura 1 , Kinya Goto 1 , Noriko Miura 1 , Shinobu Hashii 2 , Koyu Asai 1
1 , Renesas Technology Corp., Itami Japan, 2 , Renesas Semiconductor Engineering Corp., Itami Japan

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12:15 PM - F1.7
Fracture Property Improvements of a Nanoporous Thin Film via Post Deposition UV Curing.

Jeannette Jacques 1 , Ting Tsui 1 , Andrew McKerrow 1 , Robert Kraft 1
1 Silicon Technology Development, Texas Instruments, Inc., Dallas, Texas, United States

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12:30 PM - F1.8
Characterization of Chemical Bonding in Low-K Dielectric Materials for Interconnect Isolation: A XAS and EELS Study.

Patrick Hoffmann 1 , Dieter Schmeisser 1 , Ehrenfried Zschech 3 , Hans-Juergen Engelmann 3 , Franz Himpsel 2 , Heiko Stegmann 4 , Jonathan Denlinger 5
1 Applied Physics II, Brandenburg University of Technology Cottbus, Cottbus, Brandenburg, Germany, 3 , AMD Saxony LLC & Co KG, Dresden, Saxony, Germany, 2 , University of Wisconsin / Madison, Madison, Wisconsin, United States, 4 , Carl Zeiss NTS GmbH, Oberkochen Germany, 5 , Advanced Light Source, Berkeley, California, United States

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12:45 PM - F1.9
Ultra Low-k Film Deposition by PEVCD Using a Novel Organosilane as a Precursor

Yonghua Xu 1 , Ikuyo Muramoto 1 , Masato Ishikawa 1 , Hideaki Machida 1
1 , Tri Chemical Laboratories Inc., Uenohara, Yamanashi Japan

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F2: Reliability of Low-k Dielectrics
Session Chairs
Alfred Grill
Dorel Toma
Tuesday PM, April 18, 2006
Room 3009 (Moscone West)

2:30 PM - **F2.1
Reliability of Interconnect Dielectrics.

Gaddi Haase 1
1 SiTD, Texas Instruments, Dallas, Texas, United States

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3:00 PM - F2.2
Detection of Copper and Water in low-k dielectrics by Triangular Voltage Sweep measurements.

Ivan Ciofi 1 , Zsolt Tokei 1 , Marco Saglimbeni 1 , Marleen Van Hove 1
1 , IMEC, Leuven Belgium

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3:15 PM - F2.3
Suppression of Moisture-induced Electrical Instabilities in Mesoporous Silica Films Through Molecular Capping.

Amit Singh 1 , Darshan Gandhi 1 , Victor Pushpraj 1 , G. Ramanath 1
1 Materials Science & Engineering, Rensselaer Polytechnic Institute, Troy, New York, United States

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3:30 PM - F2.4
Morphological and Structural Evolution of an Ultra-low-k Dielectric During the Porogen Removal.

Diane Rebiscoul 1 , Helene Trouve 2 , Bruno Remiat 1 , Laurence Clerc 3 , Didier Louis 1 , Gerard Passemard 1
1 DRT/LETI/D2NT/Laboratoire Back End, CEA, Grenoble France, 2 LETI, Rohm and Haas Electronic Materials LLC, Grenoble France, 3 DRT/LETI/DPTS/SDOT , CEA, Grenoble France

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3:45 PM - *
Break

4:15 PM - **F2.5
Effect of Water Diffusion in Organosilicate Glass Film Stacks on Adhesion

Youbo Lin 1 , Ting Tsui 2 , Joost Vlassak 1
1 Division of Engineering & Applied Sciences, Harvard University, Cambridge, Massachusetts, United States, 2 Silicon Technology Development, Texas Instruments, Dallas, Texas, United States

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4:45 PM - F2.6
Moisture Induced Degradation of Porous Low-k Materials.

Mikhail Baklanov 1 , David O'Dwyer 1 , Adam Urbanowicz 1 , Quoc Toan Le 1 , Steven Demuynck 1
1 SPDT, IMEC, Leuven Belgium

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5:00 PM - F2.7
Methodology To Determine The Toughness Of A Brittle Thin Film By Nanoindentation.

Helene Brillet-Rouxel 1 2 , Marc Verdier 2 , Muriel Braccini 2 , Michel Dupeux 2 , Stephane Orain 3
1 Mechanical and Thermal Simulations , STMicroelectronics, Crolles France, 2 , LTPCM (CNRS/INPG/UJF), Grenoble France, 3 , PHILIPS semiconductors , Crolles France

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5:15 PM - F2.8
Supercritical Carbon Dioxide Process to Improve Dielectric and Mechanical Properties of Porous ULK Thin Films.

Julien Beynet 1 , Vincent Jousseaume 2 , Alain Madec 1 , Bruno Remiat 2 , Regis Mercier 3 , N. Dominique Alberola 3 , Gerard Passemard 4
1 , AIR LIQUIDE, Jouy-en-Josas France, 2 , CEA/LETI, Grenoble France, 3 , LMOPS, Le Bourget du Lac France, 4 , STMicroelectronics, Crolles France

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5:30 PM - F2.9
Mechanics and Fracture of Low-k Organosilicate Thin Films: Effects of UV Curing.

David Gage 1 , Eric Guyer 1 , Reinhold Dauskardt 1
1 Materials Science and Engineering, Stanford University, Stanford, California, United States

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5:45 PM - F2.10
Critical and Sub-critical Debonding in Nano-clustering Porous Low-k Films.

Ryan Smith 1 , Chihiro Uchibori 2 , Paul Ho 1
1 Laboratory for Interconnect and Packaging, The University of Texas, Austin, Texas, United States, 2 , Fujitsu Laboratories of America, Inc., Sunnyvale, California, United States

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F3: Poster Session I
Session Chairs
Gaddi   Haase
Mark O'Neill
Joost Vlassak
Wednesday AM, April 19, 2006
Salons 8-15 (Marriott)

9:00 PM - F3.1
Modelling of Thermal Conduction Mechanisms in Amorphous Inter-layer Dielectrics (ILDs).

Manu Shamsa 1 , Patrick Morrow 1 , Shriram Ramanathan 1
1 Components Research, Intel, Hillsboro, Oregon, United States

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9:00 PM - F3.10
Synthesis and Characterization of Nanoporous Ultralow Dielectric Films by Dual Porogen Approach

Jae Hwan Sim 1 , Hyun Wook Ro 2 , Hee-Woo Rhee 3 , David W. Gidely 4 , Do Yeung Yoon 1
1 Department of Chemistry, Seoul National University, Seoul Korea (the Republic of), 2 Polymer Division, National Institute of Standards and Technology, Gaithersburg, Maryland, United States, 3 Department of Chemical Engineering, Sogang University, Seoul Korea (the Republic of), 4 Department of Physics, University of Michigan, Ann Arbor, Michigan, United States

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9:00 PM - F3.11
Mechanical Properties of Organosilicate Glass Coatings

Youbo Lin 1 , Ting Tsui 2 , Joost Vlassak 1
1 Division of Engineering & Applied Sciences, Harvard University, Cambridge, Massachusetts, United States, 2 Silicon Technology Development, Texas Instruments, Dallas, Texas, United States

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9:00 PM - F3.12
Ordered Hydrophoic Mesorpous Furionated Silica Thin Film

Mingming Du 1 , Denis Mueller 2 , Phil Matz 3 , Smith Casey 1 , Pawan Nerusu 1 , Richard Reidy 1
1 Materials Science and Engineering, University of North Texas, Denton, Texas, United States, 2 Physics Department, University of North Texas , Denton, Texas, United States, 3 Silicon Technology Development, Texas Instruments Inc, Dallas, Texas, United States

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9:00 PM - F3.13
Effects of Solution Chemistry on Fracture of Nanoporous Low-k Thin-Films.

Nathan Stein 1 , Reinhold Dauskardt 1
1 Materials Science and Engineering , Stanford University, Stanford, California, United States

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9:00 PM - F3.14
Cu Via Filling Behavior and Electrical Characteristics of the 3D Cu Interconnects for Chip Stack Package

Kwang-Yong Lee 1 , Teck-Su Oh 1 , Tae-Sung Oh 1
1 Materials Science and Engineering, Hongik University, Seoul Korea (the Republic of)

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9:00 PM - F3.15
Low-Temperature Wafer Bonding of PETEOS-to-PETEOS Using Ti as Intermediate.

Jian Yu 1 , Richard Moore 2 , Hui-Feng Li 1 , Sang-Hwui Lee 1 , J. McMahon 1 , Jian-Qiang Lu 1 , Ronald Gutmann 1
1 , Rensselaer Polytechnic Institute, Troy, New York, United States, 2 , University at Albany-SUNY, Albany, New York, United States

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9:00 PM - F3.2
Structures and Properties of an Ultra-Low-k Material: Classical Molecular Dynamics and First-Principles Calculations.

Jiro Ushio 1 , Tomoyuki Hamada 2 , Takahisa Ohno 1 2 , Shin-Ichi Nakao 3 , Manabu Kato 3 , Katsumi Yoneda 3 , Nobuyoshi Kobayashi 3
1 Computational Materials Science Center, National Institute for Materials Science, Tsukuba, Ibaraki, Japan, 2 Collabolative Research Center of Frontier Simulation Software for Industrial Science, Institute of Industrial Science, University of Tokyo, Meguro-ku, Tokyo, Japan, 3 , Semiconductor Leading Edge Technologies, Inc., Tsukuba, Ibaraki, Japan

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9:00 PM - F3.3
Modeling the Impact of Layout Variation on Process Stress in Cu/Low k Interconnects.

Xiaopeng Xu 1 , Dipu Pramanik 1 , Greg Rollins 1
1 TCAD, Synopsys, Inc., Mountain View, California, United States

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9:00 PM - F3.4
Low-k Dielectric Obtained by Noble Gas Implantation in Silicon Oxide.

Hanan Assaf 1 , Esidore Ntsoenzok 1 2 , Marie Odile Ruault 3 , S. Ashok 4
1 , CERI-CNRS, Orleans France, 2 , LESI, University of orleans, Chartres France, 3 , CSNSM, CNRS-IN2P3, Orsay France, 4 departement of Engineering Science, Pennsylvania state university, Pennsylvania , Pennsylvania, United States

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9:00 PM - F3.5
Channel Cracking Technique For Toughness Measurement Of Sioch Low-K Films.

Helene Brillet-Rouxel 1 2 , Michel Dupeux 2 , Muriel Braccini 2 , Stephane Orain 3
1 Mechanical and Thermal Simulations , STMicroelectronics, Crolles France, 2 , LTPCM (CNRS/INPG/UJF), Grenoble France, 3 , PHILIPS semiconductors, crolles France

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9:00 PM - F3.6
Thermal and Dielectric Stability of Parylene X.

Jay Senkevich 1 , Brad Carrow 1 , Pei-I Wang 2
1 , Brewer Science Inc., Rolla, Missouri, United States, 2 , Rensselaer Polytechnic Institute, Troy, New York, United States

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9:00 PM - F3.8
Zeolite Film Properties Dependence on Particle Size.

Salvador Eslava-Fernandez 1 , M.R. Baklanov 1 , F. Iacopi 1 , S.H. Brongersma 1 , C. Kirschhock 2 , K. Maex 1
1 , IMEC, Leuven Belgium, 2 Centrum voor Oppervlaktechemie en Katalyse, K. U. Leuven, Leuven Belgium

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9:00 PM - F3.9
The Electrical and Chemical Properties of Ultra Low-k SiOCH Film Deposited by PECVD using decamethyl-cyclopentasiloxane and cyclohexane as the Precursors.

Jaeyoung Yang 1 , Sungwoo Lee 1 , Heeyeop Chae 2 , Donggeun Jung 1
1 Physics, Sungkyunkwan University, Suwon, Kyunggi, Korea (the Republic of), 2 Chemical Engineering, Sungkyunkwan University, Suwon, Kyunggi, Korea (the Republic of)

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9:00 PM - F3
F3.7 Transferred to F1.7

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2006-04-19   Show All Abstracts

Symposium Organizers

Ting Y. Tsui Texas Instruments, Inc.
Young-Chang Joo Seoul National University
Alex A. Volinsky University of South Florida
Lynne Michaelson Vishay Electro-Films
Michael Lane IBM T.J. Watson Research Center
F4: Low-k Dielectrics: Processing and Integration Issues
Session Chairs
Francesca Iacopi
Alex Volinsky
Wednesday AM, April 19, 2006
Room 3009 (Moscone West)

9:30 AM - **F4.1
Chemical, Mechanical and Electrical Properties of Non-Thermally Cured CVD Low-k Films for a 65nm Technology.

Kurt Junker 1 , Gregory Imbert 2 , Aurelie Humbert 3 , Laurent-Luc Chapelon 2 , Yannick Le-Friec 2 , Julien Vitiello 4 , Anissa Lagha 5 , Michael Turner 1 , Michelle Rasco 1 , Cindy Goldberg 5 , Narayanan Ramani 1
1 , Freescale Semiconductor, Austin, Texas, United States, 2 , STMicroelectronics, Crolles France, 3 , Philips Research Leuven, Leuven Belgium, 4 , Philips Semiconductor, Crolles France, 5 , Freescale Semiconductor, Crolles France

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10:00 AM - F4.2
Challenges of Ultra Low-k Dielectric Measurement and Plasma Damage Assessment.

Thomas Abell 1 , Jeffery Lee 2 , Mansour Moinpour 1
1 , Intel Corp., Santa Clara, California, United States, 2 , Intel at IMEC, Leuven Belgium

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10:15 AM - F4.3
The Effect of Plasma Damage on the Material Composition and Electrical Performance of Two Generations of SiOCH Low k Films.

Aurelie Humbert 1 , D Ernur 1 , R.J.O.M Hoofman 1
1 , Philips Research Leuven, Leuven Belgium

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10:30 AM - F4.4
Tailored Repair of low-k Dielectrics Using Mono- and Di- Functional Silanes Dissolved in Supercritical CO2.

Casey Smith 1 , Richard Reidy 1 , Dennis Mueller 2 , Phil Matz 3
1 Materials Science, University of North Texas, Denton, Texas, United States, 2 Physics, University of North Texas, Denton, Texas, United States, 3 Silicon Technology Development , Texas Instruments Inc., Dallas, Texas, United States

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10:45 AM - *
Break

11:15 AM - F4.5
Evaluation of Damages and Pore-sealing Capabilities of Oxidizing and Reducing Etch Plasmas for Single and Dual Damascene Patterning of Porous Ultra-low-k Materials.

Emmanuel Ollier 1 , Mathieu Clain 2 , Robert Fox 2 , Philippe Brun 3 , Stephane Jullian 1
1 Crolles2Alliance, Philips Semiconductors Crolles R&D, Crolles France, 2 Crolles2Alliance, Freescale Semiconductors, Crolles France, 3 Crolles2Alliance, CEA-Leti, Crolles France

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11:30 AM - F4.6
PECVD Versus Spin-on to Perform Porous ULK for Advanced Interconnects: Chemical Composition, Porosity and Mechanical Behavior.

Vincent Jousseaume 1 , Charles Le Cornec 1 , Frederic Ciaramella 1 , Laurent Favennec 2 , Aziz Zenasni 1 , Gurvan Simon 1 , Jean Paul Simon 3 , Guillaume Gerbaud 4 , Gerard Passemard 2
1 , CEA-LETI-D2NT, Grenoble France, 2 , STMicroelectronics, Grenoble France, 3 , CNRS-LTPCM, St Martin d'Heres France, 4 , CEA-DRFMC, Grenoble France

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11:45 AM - F4.7
Fracture Properties of Porous MSSQ Films: Impact of Porogen Loading and Burnout.

Markus Ong 1 , Vincent Jousseaume 2 , Sylvain Maitrejean 2 , Reinhold Dauskardt 1
1 Materials Science and Engineering, Stanford University, Stanford, California, United States, 2 , CEA-LETI, Grenoble France

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12:00 PM - F4.8
New Spin-On Oxycarbosilane Low-K Dielectric Materials With Exceptional Mechanical Properties.

Geraud Dubois 1 , Robert Miller 1 , Willi Volksen 1 , Teddie Magbitang 1
1