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2006 MRS Spring Meeting Logo2006 MRS Spring Meeting & Exhibit



April 17-21, 2006
| San Francisco
Meeting Chairs: J. Charles Barbour, Paul S. Drzaic, Gregg S. Higashi, Viola Vogel

Symposium I : Silicon-Based Microphotonics

2006-04-18   Show All Abstracts

Symposium Organizers

Mark Brongersma Stanford University
Donald S. Gardner Intel Corporation
Michal Lipson Cornell University
Jung H. Shin KAIST
I1: Si-Based Light Emitters
Session Chairs
Mark Brongersma
Don Gardner
Tuesday PM, April 18, 2006
Room 3007 (Moscone West)

9:30 AM - **I1.1
Light-emitting Porous Silicon and Silicon Nanowires: Past and Future.

Ulrich Goesele 1
1 Experimental Dept. II, Max Planck Institute of Microstructure Physics, Halle Germany

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10:00 AM - I1.2
Size and Temperature Dependent Photophysics of Si Nanowires.

Alex Guichard 1 , David Barsic 1 , Ted Kamins 2 , Shashank Sharma 2 , Mark Brongersma 1
1 Geballe Laboratory for Advanced Materials, Stanford University, Stanford, California, United States, 2 Quantum Science Research, Hewlett-Packard Laboratories, Palo Alto, California, United States

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10:15 AM - **I1.3
Tuned Spectral Emission from Silicon Nanocrystals Coupled to Metal Nanoisland Arrays.

Julie Biteen 1 , Luke Sweatlock 1 , Hans Mertens 2 , Nathan Lewis 1 , Albert Polman 2 , Harry Atwater 1
1 , California Institute of Technology, Pasadena, California, United States, 2 , AMOLF-FOM, Amsterdam Netherlands

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10:45 AM - I1.4
Silicon Quantum Dots with Photoluminescence Quantum Yields as High as 67%.

Lorenzo Mangolini 1 , David Jurbergs 2 , Elena Rogojina 2 , Uwe Kortshagen 1
1 Mechanical Engineering, University of Minnesota, Minneapolis, Minnesota, United States, 2 , InnovaLight, Inc., Minneapolis, Minnesota, United States

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11:00 AM - I1:Si Emitters
BREAK

11:30 AM - **I1.5
Light Emission in Silicon-rich Nitride Nanostructures.

Luca Dal Negro 1 , Jae Hyung Yi 1 , Jurgen Michel 1 , Lionel C. Kimerling 1 , Sebastien Hamel 2 , Andrew Williamson 2 , Giulia Galli 2
1 Materials Science, MIT, Cambridge, Massachusetts, United States, 2 , Lawrence Livermore National Laboratory, Livermore, California, United States

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12:00 PM - I1.6
Emission Properties Of Erbium-Doped Silicon Nanostructures In Silicon Nitride Under Electrical Excitation.

Jae Hyung Yi 1 , Luca Dal Negro 1 , Jurgen Michel 1 , Lionel C. Kimerling 1
1 DMSE, MIT, Cambridge, Massachusetts, United States

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12:30 PM - **I1.8
New Functionality Of C-Si:Er: Optical Memory Effect In Photo- And Electroluminescence.

I. Izeddin 1 , M. Forcales 1 , B. Andreev 2 , D. Kryzhkov 2 , W. Jantsch 3 , Tom Gregorkiewicz 1
1 , University of Amsterdam, Amsterdam Netherlands, 2 , Institute for Physics of Microstructures, RAS, Nizhny Novgorod Russian Federation, 3 , University of Linz, Linz Austria

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I2: Rare Earth-Doped Si Nanostructures
Session Chairs
Jung Shin
Tuesday PM, April 18, 2006
Room 3007 (Moscone West)

2:30 PM - **I2.1
Silicon Dioxide Films Containing Silicon Nanocrystals and Erbium ions – Modification of Spontaneous Emission Rate and Energy Transfer Rate by Metal Thin Films.

Minoru Fujii 1
1 Department of Electrical & Electronics Engineering, Faculty of Engineering, Kobe University, Kobe Japan

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3:00 PM - I2.2
Direct Measurement of the Er3+ Optical Absorption Cross-section in Different Oxide Thin Films.

W. M. M. Kessels 1 , B. Hoex 1 , I.M.P. Aarts 1 , T.T. Van 2 , J.P. Chang 2 , H. Mertens 3 , A. Polman 3 , M.C.M. Van de Sanden 1
1 Dept. of Applied Physics, Eindhoven Univ. of Technology, Eindhoven Netherlands, 2 Chemical and Biomolecular Engineering Department, University of California Los Angeles, Los Angeles, California, United States, 3 Center for Nanophotonics, FOM for Atomic and Molecular Physics, Amsterdam Netherlands

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3:15 PM - I2.3
Broadband Sensitization of Erbium ion Emission at 1.54 μm in Er and Au or Ag Coimplanted Silica Glass.

Enrico Trave 1 , Giovanni Mattei 1 , Paolo Mazzoldi 1 , Giovanni Pellegrini 1 , Cinzia Sada 1 , Carlo Scian 1 , Carlo Battaglin 2
1 Dipartimento di Fisica, Universita' di Padova, Padova Italy, 2 Dipartimento di Chimica Fisica, Universita' di Venezia, Venezia Italy

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3:30 PM - **I2.4
Band Offsets in Undoped and Er Doped Silicon Nanoparticles.

Tony van Buuren 1 2 , Rob Meulenberg 1 , April Montoya-Vaverka 1 , Trevor Willey 1 , Jon Lee 1 , Lou Terminello 1
1 Chemistry and Materials Science, LLNL, Livermore, California, United States, 2 , University of California Merced, Merced, California, United States

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4:00 PM - I2:Rare Earth
BREAK

I3: Si-Compatible Light Emitters
Session Chairs
Philippe Fauchet
Tuesday PM, April 18, 2006
Room 3007 (Moscone West)

4:30 PM - **I3.1
Si-Based Light Sources and Lasers

Albert Polman 1
1 FOM Institute, AMOLF, Amsterdam Netherlands

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5:00 PM - I3.2
PbSe Nanocrystal Excitation by a Si Nanocrystal Field Effect LED.

Robert Walters 1 , Josep Carreras 1 , Domenico Pacifici 1 , Sungjee Kim 1 , Harry Atwater 1
1 Applied Physics, California Institute of Technology, Pasadena, California, United States

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5:15 PM - I3.3
Light Emission Enhancement from Ion Beam Synthesized Nanocrystalline FeSi2-Si Structures by Multiple-cycle Implantation Approach

Judith Roller 1 5 , C.F. Chow 1 , Y.T. Chong 2 , S. P. Wong 1 3 , Quan Li 2 3 , M.A. Lourenco 4 , K.P. Homewood 4
1 Electronic Engineering, Chinese University of Hong Kong, Shatin Hong Kong, 5 Physics, University of Karlsruhe, Karlsruhe Germany, 2 Physics, Chinese University of Hong Kong, Shatin Hong Kong, 3 Materials Science and Technology Research Centre, Chinese University of Hong Kong, Shatin Hong Kong, 4 School of Electronics Engineering, Computer and Mathematics, University of Surrey, Guildford United Kingdom

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5:30 PM - **I3.4
Towards the Era of Silicon Photonics through High Efficient Silicon-based Light Emitter.

G. Sung 1 , K.H. Kim 1 , N.-M. Park 1 , T.-Y. Kim 1 , K. S. Cho 1 , C. Huh 1 , J.H. Shin 1
1 , ETRI, Daejeon Korea (the Republic of)

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I4: Poster Session: Si and Rare Earth Based Light Emitting Materials
Session Chairs
Mark Brongersma
Jung Shin
Wednesday AM, April 19, 2006
Salons 8-15 (Marriott)

9:00 PM - I4.1
Effect of Ion Implantation on the Light-emitting Si Nanocrystals.

Gregory Kachurin 1 , S. Cherkova 1 , A. Gutakovsky 1 , D. Marin 1
1 , Institute of Semiconductor Physics, Novosibirsk Russian Federation

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9:00 PM - I4.10
Structural and Photoluminescence Properties of Si clusters in Si-rich Silicon Nitride Films.

Abdelilah Slaoui 1 , Abdelatif Zerga 1 , Marzia Carrada 1
1 InESS, CNRS, Strasbourg France

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9:00 PM - I4.11
The Photoluminescence Properties of Er3+ doped a-SiNx and a-SixC1−x Films.

Liu-Fang Bian 1 , Chu-Guang Zhang 1 , Wei De Chen 1 , L. B. Ma 2 , R. Song 2 , Z. X. Cao 2 , C. C. Hsu 1
1 , Institute of Semiconductors, Chinese Academy of Sciences, Beijing China, 2 , Institute of Physics, Chinese Academy of Sciences, Beijing China

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9:00 PM - I4.12
Er2SiO5 Nanotrees Formed by Wet Chemical Synthesis Using Vertically Aligned Si Nanowire Templates.

Kiseok Suh 1 , Jung Shin 1
1 Silicon Photonics Lab, Dept. of Physics, KAIST, Daejeon Korea (the Republic of)

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9:00 PM - I4.13
Excited State Absorption in Erbium-Doped Silicon Rich Silicon Oxide.

Wei Loh 1 , Anthony Kenyon 2
1 Optoelectronics Research Centre, University of Southampton, Southampton United Kingdom, 2 Department of Electronic and Electrical Engineering, University College London, London United Kingdom

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9:00 PM - I4.14
Energy Transfer by Gd to ion Implanted Ce and Er Atoms in Metal-Oxide-Silicon-based Light Emitting Diodes.

Slawomir Prucnal 1 , J.M. Sun 1 , H Reuther 1 , W Skorupa 1
1 , Institute of Ion Beam Physics and Materials Research,Forschungszentrum Rossendorf e.V., Dresden Germany

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9:00 PM - I4.15
Flash lamp processing in the millisecond-range for Metal-Oxide-Silicon-based light emitting diodes

Slawomir Prucnal 1 , J.M. Sun 1 , A. Muecklich 1 , W. Skorupa 1
1 Ion Beam Physics and Material Research, FZR Rossendorf e.V, Dresden Germany

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9:00 PM - I4.17
Monolithic Image and Particle Sensors Based on Thin-film on CMOS Technology: Advantages, Performances and Challenges.

Clement Miazza 1 , Nicolas Wyrsch 1 , Gregory Choong 1 , Dunand Sylvain 1 , Arvind Shah 1 , Christophe Ballif 1 , Nicolas Blanc 2 , Felix Lustenberger 2 , Rolf Kaufmann 2 , Danielle Moraes 3 , Mathieu Despeisse 3 , Pierre Jarron 3
1 Insititute of Microtechnology, University of Neuchatel, Neuchatel Switzerland, 2 Photonic Division, CSEM SA, Zurich Switzerland, 3 Experimental Physic Division, CERN, Geneva Switzerland

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9:00 PM - I4.18
Synthesis of Erbium Doped Si-rich SiOx by Radio-Frequency Magnetron Cosputtering using Si/SiO/Er2O3 Target

Chia-Yang Chen 1 , Chun-Jung Lin 1 , Gong-Ru Lin 1
1 Department of Photonics & Institute of Electro-Optical Engineering, National Chiao Tung University, Hsinchu Taiwan

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9:00 PM - I4.3
Radiative Versus Non-radiative Decay Processes Studied by Time-resolved Photoluminescence for Multi-layered Si Nanocrystals Fabricated by Ion Beam Sputtering and Annealing.

Sung Kim 1 , Yong Min Park 1 , Suk-Ho Choi 1 , Kyung Joong Kim 2
1 Dept. of Physics and Applied Physics, College of Electronics and Information, Kyung Hee University, Yongin, Kyungkido, Korea (the Republic of), 2 Nano Surface Group, Korea Research Institute of Standards and Science, Taejon Korea (the Republic of)

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9:00 PM - I4.4
Growth and Photoluminescence Characteristics of Si Nanocrystals in Ion-beam-sputtered SiOx Layers Depending on Their Thickness and the Existence of SiO2 Capping Layer.

Min Choul Kim 1 , Yong Min Park 1 , Sung Kim 1 , Suk-Ho Choi 1 , Kyung Joong Kim 2 , Kwang-Hyun Ahn 3 , Song-Ho Byeon 3
1 Dept. of Physics and Applied Physics, College of Electronics and Information, Kyung Hee University, Yongin, Kyungkido, Korea (the Republic of), 2 Nano Surface Group, Korea Research Institute of Standards and Science, Taejon Korea (the Republic of), 3 College of Environment and Applied Chemistry, Kyung Hee University, Yongin, Kyungkido, Korea (the Republic of)

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9:00 PM - I4.5
Control of Er/Tm interaction in Er and Tm doped silicon nano-clusters: for optimization of rare earth luminescence

Se-Young Seo 1 2 , Margit Zacharias 1 , Jung Shin 2
1 , Max-Planck-Institute for Microstructurephysics, Halle Germany, 2 Physics, Korea Advanced Institute of Science and Technology, Daejeon Korea (the Republic of)

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9:00 PM - I4.6
Effects of Crystallinity on the Er3+ Excitation in Er-doped SiOx/SiO2 Superlattices.

Jee Soo Chang 1 , Moon-Seung Yang 1 , Jung Shin 1 , Kyung Joong Kim 2 , Dae won Moon 2
1 Physics, Korea Advanced Institute of Science & Technology(KAIST), Daejeon Korea (the Republic of), 2 Nano surface group, Korea Research Institute of Standards and Science(KRISS), Daejon Korea (the Republic of)

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9:00 PM - I4.7
The Effect of Hole Confinement on Luminescence Efficiency of Er in group IV Semiconductors.

Karen Vernon-Parry 1 , Jan Evans-Freeman 1 , Phil Dawson 2
1 Materials and Engineering Research Institute, Sheffield Hallam University, Sheffield United Kingdom, 2 Physics Department, University of Manchester, Manchester United Kingdom

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9:00 PM - I4.8
Visible photo- and Electro-luminescence from Tb-doped Silicon Oxy-nitride.

Hoon Jeong 1 , Jung Shin 1
1 Physics, Korea Advanced Institute of Science and Technology, Daejeon Korea (the Republic of)

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9:00 PM - I4.9
Nanocluster Si Sensitization of Er3+ Using Silicon-rich Silicon Nitride.

Moon-Seung Yang 1 , Jung Shin 1 , Kyung Joong Kim 2
1 Physics, Korea Advanced Institute of Science and Technology (KAIST), Daejeon Korea (the Republic of), 2 Nano-Surface, Korea Research Institute of Standards and Science (KRISS), Daejeon Korea (the Republic of)

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2006-04-19   Show All Abstracts

Symposium Organizers

Mark Brongersma Stanford University
Donald S. Gardner Intel Corporation
Michal Lipson Cornell University
Jung H. Shin KAIST
I5: Si-Based Light Sources I
Session Chairs
Albert Polman
Wednesday AM, April 19, 2006
Room 3007 (Moscone West)

9:30 AM - **I5.1
Electrically-Pumped Nanocrystal Sources for Si Photonics

Harry Atwater 1
1 Applied Physics, California Institute of Technology, Pasadena, California, United States

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10:00 AM - I5.2
Interface- and Size- Controlled Silicon Nanocrystals Applicable for Nonvolatile Memory or Photonic Device.

Kyong Hee Joo 1 , Sang Ryol Yang 1 , Seung-Hyun Lim 1 , Seung-Jae Baik 1 , Yong-Won Cha 1 , Young-Kwan Cha 2 , In-Seok Yeo 1 , U-In Chung 1 , Joo Tae Moon 1 , In Kyeong Yoo 2 , Suk-Ho Choi 3
1 Memory Devision, Samsing Electronics, Yongin Korea (the Republic of), 2 U-Team, Samsung Advanced Institute of Technology, Yongin Korea (the Republic of), 3 Physics and Applied Physics, Kyung Hee University, Yongin Korea (the Republic of)

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10:15 AM - I5.3
Application of Luminescent Nanocrystalline Silicon Particles to Display Field

Keisuke Sato 1 , Satoshi Yanagisawa 1 , Kenji Hirakuri 1
1 Dept. of Electronic and Computer Engineering, Tokyo Denki University, Hikigun, Saitama, Japan

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10:30 AM - I5.4
Transparent Current Spreading Ni/Ag/ITO Contact to Si Quantum Dot Light-emitting Diodes.

Chul Huh 1 , Nae-Man Park 1 , Tae-Youb Kim 1 , Kyung-Hyun Kim 1 , Jae-Heon Shin 1 , Kwan Sik Cho 1 , Gun Yong Sung 1
1 Future Technology Reseach Division, Electronics and Telecommunications Research Institute, Daejeon Korea (the Republic of)

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10:45 AM - I5.5
Enhanced Light-extraction Efficiency of Silicon Quantum Dot Light-emitting Diode by Nano-roughened Surfaces.

Baek-Hyun Kim 1 , Il-Kyu Park 1 , Tae-Wook Kim 1 , Chang-Hee Cho 1 , Seong-Ju Park 1 , Nae-Man Park 2 , Gun-Yong Sung 2
1 Materials Science and Engineering, Gwangju Institute of Science and Technology, Gwangju Korea (the Republic of), 2 , Electronics and Telecommunications Research Institute, Daejeon Korea (the Republic of)

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11:00 AM - I5:Si Sources
BREAK

I6: Si-Based Light Sources II
Session Chairs
Lionel Kimmerling
Wednesday PM, April 19, 2006
Room 3007 (Moscone West)

11:30 AM - **I6.1
Light Emitting Devices Based on Si Nanostructures.

Alessia Irrera 1 , Giorgia Franzo' 1 , Fabio Iacona 2 , Calogero D. Presti 1 , Isodiana Crupi 1 , Andrea Canino 1 , Delfo Sanfilippo 3 , Gianfranco Di Stefano 3 , Angelo Piana 3 , PierGiorgio Fallica 3 , Francesco Priolo 1
1 , MATIS- CNR-INFM and Dipartimento di Fisica e Astronomia, Universita' di Catania , Catania Italy, 2 , IMM-CNR, Catania Italy, 3 , STMicroelectronics, Catania Italy

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12:00 PM - I6.2
Optical Activation and Electrical Stabilization of the Ultra Violet Electroluminescence from SiO2:Gd Gate Oxide Layers by Fluorine and Potassium Co-implantations.

Slawomir Prucnal 1 , Jiaming Sun 1 , H. Reuther 1 , W. Skorupa 1
1 , Institute of Ion Beam Physics and Material Research, Forschungszentrum Rossendorf, POB 510119, D-01314 Dresden Germany

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12:15 PM - I6.3
Efficient Evanescent-Wave Coupling from a SiON Waveguide to a Si p-i-n Photodetector

Donghwan Ahn 1 , Ching-yin Hong 1 , Lionel Kimerling 1 , Jurgen Michel 1
1 Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts, United States

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12:30 PM - **I6.4
Efficiency and Stability Issues of Metal-Oxide-Silicon-based Light Emitting Diodes made by Rare Earth Ion Implantion

Wolfgang Skorupa 1 2 , Jiaming Sun 1 , Slawomir Prucnal 1 4 , Manfred Helm 1 2 , Lars Rebohle 2 , Thoralf Gebel 2 , Alexei Nazarov 3 , Igor Osiyuk 3 , Igor Tjagulski 3 , Jerzy Zuk 4
1 FWIM, Forschungszentrum Rossendorf e.V., Dresden Germany, 2 , nanoparc GmbH, Dresden Germany, 4 , Maria Curie-Sklodowska-University, Lublin Poland, 3 , Institute of Semiconductor Physics, Kyiv Ukraine

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I7: SiGe-Based Light Emitters and Modulators
Session Chairs
Jung Shin
Wednesday PM, April 19, 2006
Room 3007 (Moscone West)

2:30 PM - **I7.1
Photoluminescence in Composition-Controlled Three-Dimensional Si/Si1-xGex Nanostructures

Leonid Tsybeskov 1
1 , NJIT, Newark, New Jersey, United States

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3:15 PM - I7.3
Pure Germanium Isotopes for Investigating Interdiffusion in Uncapped Self-Assembled Ge/Si Nanostructures.

Oussama Moutanabbir 1 , Satoru Miyamoto 1 , Yoshiyuki Tabuchi 1 , Kohei Itoh 1
1 Applied Physics and Physico-Informatics, Keio University, Yokohama Japan

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3:30 PM - **I7.4
Ge/SiGe Quantum Well Photonic Devices.

James Harris 1 , Yu-Hsuan Kuo 1 , Yong Kyu Lee 1 , Yangsi Ge 1 , Shen Ren 1 , Jonathan Roth 1 , Glenn Solomon 1 , Theodore Kamins 1 , David Miller 1
1 Electrical Engineering, Stanford University, Stanford, California, United States

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4:00 PM - I7: SiGe
BREAK

I8: Microresonators
Session Chairs
Michal Lipson
Wednesday PM, April 19, 2006
Room 3007 (Moscone West)

4:30 PM - **I8.1
Demonstration of Erbium Doped Micro-disk Lasers on a Silicon Chip.

Tobias Kippenberg 1 , Jeroen Kalkman 2 , Anna Tchebotareva 2 , Albert Polman 2 , Kerry Vahala 3
1 , Max Planck Institute of Quantum Optics, Garching Germany, 2 , Center for Nanophotonics, FOM Institute AMOLF, Amsterdam Netherlands, 3 , California Institute of Technology, Pasadena, California, United States

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5:00 PM - I8.2
Whispering-gallery-mode of Visible nc-silicon Luminescence in Microdisk Arrays Based on Size Controlled Si Nanocrystals.

Se-Young Seo 1 , Rong-Jun Zhang 1 , Alexey Milenin 1 , Manfred Reiche 1 , Margit Zacharias 1
1 , Max-Planck-Institute for Microstructurephysics, Halle Germany

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5:15 PM - I8.3
Evidence for Stimulated Emission in Silicon Nanocrystal Microspheres

Hui Chen 1 , Joo-Yeon Sung 3 , Anuranjita Tewary 4 , Mark Brongersma 4 , Jung Shin 3 , Philippe Fauchet 2
1 Department of Physics, Univ. of Rochester, Rochester, New York, United States, 3 Department of Physics, Korea Advanced Institute of Science and Technology, Taejon Korea (the Republic of), 4 Geballe Laboratory for Advanced Materials, Stanford University, Stanford, California, United States, 2 Department of Electrical and Computer Engineering, Univ. of Rochester, Rochester, New York, United States

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5:30 PM - **I8.4
Microphotonics Applications of Silicon Microspheres

Ali Serpenguzel 1
1 Physics Department, Microphotonics Research Laboratory, Koc University, Istanbul Turkey

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I9: Poster Session: Si Compatible Materials and Devices
Session Chairs
Don Gardner
Michal Lipson
Thursday AM, April 20, 2006
Salons 8-15 (Marriott)

9:00 PM - I9.1
SiGe nanophotonics: The growth and optical properties of SiGe nanowires.

Jee-Eun Yang 1 , Chang-Beom Jin 1 , Yosep Yang 1 , Chan-Gyung Park 1 , Moon-Ho Jo 1
1 materials science and engineering, postech, Pohang Korea (the Republic of)

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9:00 PM - I9.10
Laser-induced Structural Modifications in Nanocrystalline Silicon/Amorphous Silicon Dioxide Superlattices

Boris Kamenev 1 , Haim Grebel 1 , Leonid Tsybeskov 1
1 , NJIT, Newark, New Jersey, United States

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9:00 PM - I9.11
Evaluation of Heavy Metal Impurity Behaviors in the n/n+ and p/p+ Epitaxial Wafer by Means of Microwave Photoconductive Decay Method.

Hochan Ham 1 , Sungwook Lee 1 , Byung-seop Hong 1 , Bo-young Lee 1
1 Application & Analysis team, R&D center, LG Siltron Inc., Kumi City, Gyeongsangbuk-do, Korea (the Republic of)

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9:00 PM - I9.12
A Comparative Study of CVD-Grown a-SiCxOyHz Materials for Silicon Photonics.

Spyros Gallis 1 , Vasileios Nikas 1 , Mengbing Huang 1 , Eric Eisenbraun 1 , Alain Kaloyeros 1
1 College of Nanoscale Science and Engineering, The University at Albany - SUNY, Albany, New York, United States

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9:00 PM - I9.13
Nonlinear Optical Response of the Complete Photonic Band Gap in Silicon Inverse Opal

Hong Wei 1 , David Underwood 2 , David Blank 2 , David Norris 1
1 Department of Chemical Engineering and Materials Science, University of Minnesota, Minneapolis, Minnesota, United States, 2 Department of Chemistry, University of Minnesota, Minneapolis, Minnesota, United States

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9:00 PM - I9.14
Oxidation of Structured Silicon Thin Films for Inverse Silicon Square Spiral Photonic Crystal Fabrication

Mark Summers 1 , Michael Brett 1
1 Electrical and Computer Engineering, University of Alberta, Edmonton, Alberta, Canada

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9:00 PM - I9.15
Active Photonic Crystals Based multiplexer.

Principia Dardano 1 2 , Vito Mocella 1 , Luigi Moretti 3 , Luigi Sirleto 1 , Ivo Rendina 1
1 Sez. di Napoli, CNR-IMM, Napoli Italy, 2 Dip. Scienze Fisiche, Federico II University, Napoli Italy, 3 , Mediterranea University, Reggio Calabria Italy

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9:00 PM - I9.16
Predictive Process Simulation of the FIB-based Fabrication of Metallic Nanoparticle Waveguides.

Lars Roentzsch 1 , Karl-Heinz Heinig 1
1 FWIT, Research Center Rossendorf, Dresden Germany

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9:00 PM - I9.17
Vapours Sensing In Porous Silicon With Raman Scattering.

Maria Antonietta Ferrara 1 2 , Luigi Sirleto 1 , Ivo Rendina 1
1 IMM, CNR , Napoli, Na, Italy, 2 DIMET, University of Reggio Calabria, Reggio Calabria Italy

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9:00 PM - I9.18
Room Temperature Coulomb Blockade Effect in Silicon Quantum Dots in Silicon Nitride Film.

Chang-Hee Cho 1 , Baek-Hyun Kim 1 , Seong-Ju Park 1
1 Department of Materials Science and Engineering, Gwangju Institute of Science and Technology, Gwangju Korea (the Republic of)

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9:00 PM - I9.19
Surface Structure of Al-induced Clusters on Si(001) using CAICISS.

J. H. Seo 1 , C. N. Whang 1 , K.-H. Yoo 1 , S. S. Kim 2 , D. S. Choi 3 , K. H. Chae 4
1 Institute of Physics & Applied Physics , Yonsei university, Seoul Korea (the Republic of), 2 Department of Techno-marketing, Mokwon Universit, Taejeon Korea (the Republic of), 3 Department of Physics, Kangwon National University, Chuncheon Korea (the Republic of), 4 Division of Materials Science and Technology, Korea Institute of Science and Technology, SEOUL Korea (the Republic of)

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9:00 PM - I9.2
Low-temperature Hetero-epitaxial Ggrowth of Ge on Si by High Density Plasma Chemical Vapor Deposition.

Malcolm Carroll 1 , Josephine Sheng 1 2 , Jason Verley 1 , Jim Banks 2
1 Microphotonic Systems, Sandia National Labs, Albuquerque, New Mexico, United States, 2 Electrical Engineering, University of New Mexico, Albuquerque, New Mexico, United States

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9:00 PM - I9.3
In situ Doped Ge Film on Si for Near-infrared Ge Photodetectors.

Jer-shen Maa 1 , Douglas Tweet 1 , Jong-Jan Lee 1 , Greg Stecker 1 , Mark Burgholzer 1 , Ray Hill 1 , Sheng Teng Hsu 1
1 , Sharp Labs of America, Camas, Washington, United States

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9:00 PM - I9.4
Visible-Blind UV/IR Photodetectors Integrated on Si Substrates.

David Starikov 1 2 , John Boney 2 1 , Rajeev Pillai 2 , Abdelhak Bensaoula 2
1 , Integrated Micro Sensors Inc., Houston, Texas, United States, 2 CAM, University of Houston, Houston, Texas, United States

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9:00 PM - I9.5
Modeling Misfit Dislocation Arrays for the Growth of Low-Defect Density AlSb on Si

Anitha Jallipalli 1 , Ganesh Balakrishnan 1 , Shenghong Huang 1 , Arezou Khoshakhlagh 1 , Ralph Dawson 1 , Diana Huffaker 1
1 Center for High Technology Materials, University of New Mexico, Albuquerque, New Mexico, United States

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9:00 PM - I9.6
Spatially Resolved Characterization of Microstructure, Defects and Tilts in GaN Layers Grown on Si(111) Substrates by Maskless Cantilever Epitaxy.

Rozaliya Barabash 1 , G. Ice 1 , W. Liu 1 , O. Barabash 1 , C. Roder 2 , S. Figge 2 , S. Einfeldt 2 , D. Hommel 2 , T. Katona 3 , J. Speck 4 , S. DenBaars 4
1 Metals and Ceramics Div., Oak Ridge National Laboratory, Oak Ridge TN, Tennessee, United States, 2 , University of Bremen, Bremen Germany, 3 Electrical and Computer Engineering Department, University of California, Santa Barbara, santa Barbara, California, United States, 4 Materials Department, University of California, Santa Barbara, santa Barbara, California, United States

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9:00 PM - I9.7
GaAs to Si Integration via Isothermal Solidification Metal Waferbonding.

Justin Bickford 1 , Paul Yu 1 , S.S. Lau 1
1 Electrical and Computer Engineering, University of California, San Diego, La Jolla, California, United States

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9:00 PM - I9.8
Theoretical Investigation of Strain-balanced GaP1-xNx/GaAsyNy superlattices lattice-matched to Si(001) for 1.5-1.8 eV photonic applications

Lekhnath Bhusal 1 2 , Wenkai Zhu 1 2 , Alex Freundlich 1 2
1 Photovolatics and Nanostructures Laboratories, Texas Center for Advanced Materials , Houston, Texas, United States, 2 Physics Department, University of Houston, Houston, Texas, United States

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9:00 PM - I9.9
Enhanced Broad Band Cathodoluminescence of Nano-Structured Zinc Silicate Films.

Young-Hwan Kim 1 , Woon-Jo Cho 2 , Yu-Jin Park 1 3 , Soo-Jin Lee 2 , Yong Tae Kim 1
1 Semiconductor Materials and Devices Laboratory, Korea Institute of Science and Technology, Seoul Korea (the Republic of), 2 Nano Device Research Center, Korea Institute of Science and Technology, Seoul Korea (the Republic of), 3 Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology, Daejeon Korea (the Republic of)

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2006-04-20   Show All Abstracts

Symposium Organizers

Mark Brongersma Stanford University
Donald S. Gardner Intel Corporation
Michal Lipson Cornell University
Jung H. Shin KAIST
I10: Active Si Photonic Devices
Session Chairs
Harry Atwater
Thursday AM, April 20, 2006
Room 3007 (Moscone West)

9:30 AM - **I10.1
Proposal for Mid-infrared Silicon Raman lasers

Bahram Jalali 1 , Varun Raghunathan 1 , Ramesh Shori 1 , Oscar Stafsudd 1
1 Electrical Engineering Department, University of California, Los Angeles, Los Angeles, California, United States

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10:00 AM - I10.2
Thermo-electrical Analysis of an Optoelectronic Modulator Integrated in a SOI Rib Waveguide Operating in the Gb/s Regime.

Mario Iodice 1 , Giuseppe Coppola 1 , Rocco Zaccuri 1
1 , IMM-CNR, Napoli Italy

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10:15 AM - I10.3
Microstrutural, Optical and electro-optical Properties Of Ba0.5Sr0.5TiO3 Thin Film Deposited By Pulsed Laser Deposition For Active Low Loss Waveguide Applications.

Mounir Gaidi 1 2 , Marcello Ferrera 1 3 , Fulvio Cusimano 1 3 , Robin Helsten 1 , Yongwoo Park 1 , Jose Azana 1 , Roberto Morandotti 1 , Pasquale Cusumano 3 , Mohamed Chaker 1
1 , INRS-EMT, Varennes, Quebec, Canada, 2 , Adtek Photomask Inc, Monteral, Quebec, Canada, 3 Department of Electrical Engineering, University of Palermo, Palermo Italy

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10:30 AM - I10.4
High Sensitivity Sensor Based on Porous Silicon Waveguide

Sharon Weiss 1 , Guoguang Rong 1 , Jarkko Saarinen 2 , John Sipe 2
1 Electrical Engineering & Computer Science, Vanderbilt University, Nashville, Tennessee, United States, 2 Department of Physics and Institute for Optical Sciences, University of Toronto, Toronto, Ontario, Canada

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10:45 AM - I10.5
Ferroelectric Perovskite Oxide Integration for Active Silicon Photonic Devices

Matthew Dicken 1 , Axel Scherer 1 , Harry Atwater 1
1 Applied Physics, California Institute of Technology, Pasadena, California, United States

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11:00 AM - I10: Si Photonic
BREAK

I11: Si Microphotonics
Session Chairs
Mark Brongersma
Thursday PM, April 20, 2006
Room 3007 (Moscone West)

11:30 AM - **I11.1
A Roadmap for Silicon-based On-chip Optical Interconnects

Philippe Fauchet 1 , Eby Friedman 1 , David Albonesi 2 , Mikhail Haurylau 1 , Hui Chen 3 , Jidong Zhang 1 , Guoqing Chen 1 , Nicholas Nelson 1
1 ECE, University of Rochester, Rochester, New York, United States, 2 ECE, Cornell University, Ithaca, New York, United States, 3 Physics and Astronomy, University of Rochester, Rochester, New York, United States

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12:00 PM - **I11.2
Fiber on a Chip: Nonlinear Optics in Siliconwires

Richard Osgood 1 , Oliver Chen 1 , Andy Hsieh 1 , Nicolae Panoiu 1 , Jerry Dadap 1 , Frank Dulkeith 2 , Sharee McNab 2 , Yurii Vlasov 2
1 , Columbia University, New York, New York, United States, 2 IBM Watson Labs, IBM, Yorktown Heights, New York, United States

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12:30 PM - **I11.3
Silicon Microphotonics: Hardware for the Information Age.

Lionel Kimerling 1
1 Materials Science and Engineering, MIT, Cambridge, Massachusetts, United States

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I12: Photonic Crystals I
Session Chairs
Michal Lipson
Thursday PM, April 20, 2006
Room 3007 (Moscone West)

2:30 PM - **I12.1
Low Loss and Slow Light Photonic Crystal Waveguides in SOI.

Thomas Krauss 1 , Michael Settle 1 , Michael Salib 2 , Albert Michaeli 3
1 School of Physics and Astronomy, University of St. Andrews, Fife United Kingdom, 2 , Intel Corporation, Santa Clara, California, United States, 3 , Intel Corporation, Kyriat Gat Israel

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3:00 PM - I12.2
Tuning of Integrated Silicon Based Photonic Bandgap Structures

Mikhail Haurylau 1 , Jidong Zhang 1 , Sean Anderson 2 , Kenneth Marshall 3 , Philippe Fauchet 1 2 3
1 Department of the Electrical and Computer Engineering, University of Rochester, Rochester, New York, United States, 2 The Institute of Optics, University of Rochester, Rochester, New York, United States, 3 The Laboratory for Laser Energetics, University of Rochester, Rochester, New York, United States

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