Meetings & Events

 

Spring 2009 Logo2009 MRS Spring Meeting & Exhibit



April 13-17, 2009
| San Francisco
Meeting Chairs: Paul R. Besser, Peter Fratzl, Nicola Spaldin, Terry M. Tritt

Symposium C : CMOS Gate-Stack Scaling--Materials, Interfaces, and Reliability Implications

2009-04-14   Show All Abstracts

Symposium Organizers

Bill Taylor Sematech, Inc.
Rusty Harris Texas A&M University
Jeff Butterbaugh FSI International
Alex Demkov University of Texas-Austin
Willy Rachmady Intel Corporation
C1: Dielectrics I: Advanced Doped and Epitaxial Oxides
Session Chairs
Michel Houssa
Tuesday AM, April 14, 2009
Room 2006 (Moscone West)

9:00 AM - **C1.1
Epitaxial Lanthanide Oxide based Gate Dielectrics.

H. Joerg Osten 1 , Arpuba Laha 1 , Andreas Fissel 2
1 Institute of Electronic Materials and Devices, Leibniz University, Hannover Germany, 2 Information Technology Laboratory, Leibniz University, Hannover Germany

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9:30 AM - C1.2
Optimization of La- doped HfO2 by Atomic Layer Deposition.

Paul Jamison 1 , Hemanth Jagannathan 1 , Lisa Edge 1 , Ryosuke Iijima 3 , Robert Clark 4 , Steven Consiglio 4 , Cory Wajda 4 , Gert Leusink 4 , Vamsi Paruchuri 1 , Vijay Narayanan 2
1 , IBM @ Albany Nanotech, Albany, New York, United States, 3 , Toshiba America Electronic Components, Inc. @ T.J. Watson Research Center, Yorktown Heights, New York, United States, 4 , TEL Technology Center, America, Albany, New York, United States, 2 , IBM Research Division, T.J. Watson Research Center, Yorktown Heights, New York, United States

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9:45 AM - C1.3
Sr and Ti Precursor’s Development for Next Generation Thin Films Applications.

Rajesh Katamreddy 1 , Vincent Omarjee 1 , Benjamin Feist 1 , Christian Dussarrat 1
1 Delaware Research and Technology Center, Air Liquide Inc, Newark, Delaware, United States

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10:00 AM - C1.4
Highly Conformal ALD LaOx and La-based High-k Dielectric Films Using Novel Vaporizer Technology.

Carl Barelli 1 , H. Kim 1 , Gi Kim 1 , Yoshihide Senzaki 1 , Johannes Lindner 1 , Brian Lu 1 , Zia Karim 1 , Sasangan Ramanathan 1
1 , AIXTRON, Sunnyvale, California, United States

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10:15 AM - C1.5
Interaction of Hf Precursor with H2O-terminated Si(100): First Principles Study.

Dae-Hyun Kim 1 , Dae-Hee Kim 1 , Hwa-Il Seo 2 , Yeong-Cheol Kim 1
1 Department of Materials Engineering, Korea University of Technology and Education, Chonan Korea (the Republic of), 2 School of Information Technology, Korea University of Technology and Education, Chonan Korea (the Republic of)

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10:30 AM - C1.6
Terbium Scandate as a Higher-k Dielectric.

Martin Roeckerath 1 2 , Marcelo Lopes 1 2 , Eylem Durgun Oezben 1 2 , Yunfa Jia 3 , Juergen Schubert 1 2 , Siegfried Mantl 1 2 , Darrell Schlom 3
1 Institute of Bio- and Nanosystems IBN1-IT, Research Centre Juelich, Juelich Germany, 2 , JARA – Fundamentals of Future Information Technologies, Juelich Germany, 3 Department of Materials Science and Engineering, The Pennsylvania State University, University Park, Pennsylvania, United States

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10:45 AM - C1.7
The Role of Strontium in Oxide Epitaxy on Silicon (001).

James Reiner 1 , Kevin Garrity 2 , Fred Walker 1 , Sohrab Ismail-Beigi 1 2 , Charles Ahn 1 2
1 Applied Physics, Yale University, New Haven, Connecticut, United States, 2 Physics, Yale University, Berkeley, California, United States

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11:00 AM -
BREAK

C3: Electrodes for Advanced Gate Stacks
Session Chairs
Niti Goel
Tuesday PM, April 14, 2009
Room 2006 (Moscone West)

2:30 PM - **C3.1
Understanding Work Function Control for Metal Gate / high K Oxide Gate Stacks.

John Robertson 1
1 , Cambridge University, Cambridge United Kingdom

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3:00 PM - C3.2
Exploration of the Ta(C,N)x/HfO2 Advanced Gate Stack Using Combinatorial Methodology

Kao-Shuo Chang 1 2 , Martin Green 1 , Hilary Lane 2 , Peter Schenck 1 , Jason Hattrick-Simpers 1 , Ichiro Takeuchi 2 , Cherno Jaye 3 , Daniel Fischer 1 , Stefan De Gendt 4
1 Materials Science and Engineering, NIST, Gaithersburg, Maryland, United States, 2 Department of Materials Science & Engineering, U. of Maryland, College Park, Maryland, United States, 3 National Synchrotron Light Source, Brookhaven National Laboratory, Upton, New York, United States, 4 , IMEC, Leuven Belgium

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3:15 PM - C3.3
The Effect Of Heat Treatments And Enviroment On The Dipole Formation At Metal/High-Κ Dielectric Interface Studied By XPS.

Andrei Zenkevich 1 , Yuri Lebedinskii 1 , Yuri Matveyev 1 , Vladimir Tronin 2
1 Solid state physics and Nanosystems, Moscow Engineering Physics Institute (state university), Moscow Russian Federation, 2 Molecular Physics, Moscow Engineering Physics Institute (state university), Moscow Russian Federation

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3:30 PM - C3.4
Variability of Metal Grain Orientation and the Effects on Electrical Characteristics of Nanoscale MOSFETs

Xiao Zhang 1 , Melody Grubbs 2 , Michael Deal 1 , Bruce Clemens 2 , Yoshio Nishi 1
1 Electrical Engineering, Stanford University, Stanford, California, United States, 2 Materials Science and Engineering, Stanford University, Stanford, California, United States

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3:45 PM - C3.5
Chemical and Structural Stability of High-Temperature-Stable Amorphous Ta-W-Si-B Gates on HfO2

Melody Grubbs 1 , Xiao Zhang 2 , Michael Deal 2 , Yoshio Nishi 2 , Bruce Clemens 1
1 Materials Science and Engineering, Stanford University, Stanford, California, United States, 2 Electrical Engineering, Stanford University, Stanford, California, United States

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4:00 PM -
BREAK

2009-04-15   Show All Abstracts

Symposium Organizers

Bill Taylor Sematech, Inc.
Rusty Harris Texas A&M University
Jeff Butterbaugh FSI International
Alex Demkov University of Texas-Austin
Willy Rachmady Intel Corporation
C7: Devices III: Dielectric Engineering
Session Chairs
Rusty Harris
Wednesday PM, April 15, 2009
Room 2006 (Moscone West)

2:30 PM - **C7.1
High-k/Metal Gate Device and Integration Challenges.

Michael Hargrove 1
1 , AMD, Hopewell Junction, New York, United States

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3:00 PM - C7.2
Molecular Dynamics Simulations of Strained HfO2

Travis Kemper 1 , Susan Sinnott 1 , Simon Phillpot 1
1 , University of Florida, Gainesville, Florida, United States

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3:15 PM - C7.3
Role of Arsenic-defect Complexes During Arsenic Uphill Diffusion.

Ning Kong 1 , Taras Kirichenko 2 , Gyeong Hwang 3 , Sanjay Banerjee 1
1 Electrical and computer Engineering, University of Texas at Austin, Austin, Texas, United States, 2 , Freescale Semiconductor Inc. , Austin, Texas, United States, 3 Department of Chemical Engineering, University of Texas at Austin , Austin, Texas, United States

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3:30 PM - C7.4
Nb2O5 High-k Dielectric Thin Films for Gigabit DRAM Capacitor Technology.

Masaki Yamato 1 , Hikaru Hara 1 , Takamaro Kikkawa 1
1 , Hiroshima Univ., Higashi-hiroshima Japan

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3:45 PM - C7.5
Impact of Post Deposition Annealing on Characteristics of HfxZr1-xO2.

Dina Triyoso 1 , R. Hedge 1 , R. Gregory 1 , G. Spencer 1 , W. Taylor 1
1 Technology Solutions Organization, Freescale Semiconductor, Inc., Austin, Texas, United States

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4:00 PM -
BREAK

C8: Characterization I: Characterization of Advanced Gate Stacks
Session Chairs
Fred Walker
Wednesday PM, April 15, 2009
Room 2006 (Moscone West)

4:15 PM - *C8.1
Atomic Rearrangement of Substrate Atoms During Four Different Methods of Gate Oxide Deposition on Compound Semiconductors.

Jon Clemens 1 , Jian Shen 1 , Wil Melitz 1 , Darby Winn 1 , Evgueni Chagarov 1 , Tao Song 1 , Andrew Kummel 1
1 Chemistry/Biochemistry and Materials Science, University of California at San Diego, La Jolla, California, United States

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5:00 PM - C8.2
High-k Band Alignment on High-mobility Substrates by Means of X-ray Photoelectron Spectroscopy.

Michele Perego 1 , Gabriele Seguini 1 , Marco Fanciulli 1 2
1 , Laboratorio Nazionale MDM, CNR-INFM, Agrate Brianza Italy, 2 Dipartimento di Scienza dei Materiali, Università degli studi di Milano Bicocca, Milano Italy

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5:15 PM - C8.3
Growth and Layer Characterization of SrTiO3 by Atomic Layer Deposition using Sr(tBu3Cp)2 and Ti(OMe)4.

Mihaela Popovici 1 , Sven Van Elshocht 1 , Johan Swerts 2 , Dieter Pierreux 2 , Nicolas Menou 1 , Annelies Delabie 1 , Karl Opsomer 1 , Bert Brijs 1 , Gerrit Faelens 1 , Alexis Franquet 1 , Thierry Conard 1 , Jan Willem Maes 2 , Dirk Wouters 1 , Jorge Kittl 1
1 , IMEC vzw, Leuven Belgium, 2 , ASM Belgium, Leuven Belgium

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5:30 PM - C8.4
Dielectric Tensor of Single Crystals of the Alternative Gate Oxide Candidate LaLuO3.

Tassilo Heeg 1 2 , Klaus Wiedenmann 3 , Martin Roeckerath 4 , Darrell Schlom 1 2
1 Materials Science and Engineering, Penn State University, University Park, Pennsylvania, United States, 2 Department of Materials Science and Engineering, Cornell University, Ithaca, New York, United States, 3 Experimentalphysik VI, Elektronische Korrelationen und Magnetismus, Institut für Physik, Universität Augsburg, Augsburg Germany, 4 Institute of Bio- and Nanosystems IBN1-IT, and JARA-FIT, Research Centre Jülich, Jülich Germany

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5:45 PM - C8.5
Structural and Chemical Studies using XPD and Synchrotron Radiation Photoemission of Epitaxial γ-Al2O3 Thin Films Grown on Si(111) and Si(001).

Mario El Kazzi 1 3 , Clement Merckling 2 3 , Genevieve Grenet 3 , Guillaume Saint-Girons 3 , Mathieu Silly 1 , Fausto Sirroti 1 , Guy Hollinger 3
1 , Synchrotron SOLEIL, L'orme des Merisiers, 91192 Gif-sur-Yvette France, 3 , INL (UMR 5270), Ecole centrale de Lyon, 69134 Ecully France, 2 , IMEC, Kapeldreef 75, B-3001 Leuven Belgium

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2009-04-16   Show All Abstracts

Symposium Organizers

Bill Taylor Sematech, Inc.
Rusty Harris Texas A&M University
Jeff Butterbaugh FSI International
Alex Demkov University of Texas-Austin
Willy Rachmady Intel Corporation
C10: Interface II: III-V Substrates
Session Chairs
Andy Kummel
Thursday AM, April 16, 2009
Room 2006 (Moscone West)

9:00 AM - **C10.1
Interface Formation Mechanisms for high-k Layers Deposited on III-V Substrates.

Anthony Muscat 1 , Fee Li Lie 1 , Babak Imangholi 1
1 Department of Chemical and Environmental Engineering, University of Arizona, Tucson, Arizona, United States

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9:30 AM - C10.2
Surface Preparation of Ternary III-V Compound Semiconductors for Atomic Layer Deposition of High-k Films

Fee Li Lie 1 , Willy Rachmady 2 , Anthony Muscat 1
1 Department of Chemical and Environmental Engineering, University of Arizona, Tucson, Arizona, United States, 2 Components Research, Intel Corporation, Hillsboro, Oregon, United States

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9:45 AM - C10.3
Interface of ALD dielectrics on GaAs.

Theodosia Gougousi 1 , Justin Hackley 1 , John Lacis 1 , J. Derek Demaree 2
1 Physics, UMBC, Baltimore , Maryland, United States, 2 , Army Research Laboratory, Aberdeen Proving Ground, Maryland, United States

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10:00 AM - C10.4
Molecular Beam Deposition of Gd2O3 Films on GeO2/Ge Passivated III-V Compound Substrates (GaAs, In0.15Ga0.85As) Prepared by Atomic Hydrogen Cleaning.

Alessandro Molle 1 , Sabina Spiga 1 , Andrea Andreozzi 1 , Marco Fanciulli 1 2 , Guy Brammertz 3 , Marc Meuris 3
1 Laboratorio Nazionale MDM, CNR-INFM, Agrate Brianza, Milano, Italy, 2 Dipartimento di Scienza dei Materiali, Università degli Studi di Milano Bicocca, Milano, Milano, Italy, 3 , IMEC, Leuven Belgium

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10:15 AM - C10.5
Control of Interfacial Oxide Formation for Dielectrics in Direct Contact with III-V Channels.

Marko Milojevic 1 , Rocio Contreras-Guerrero 2 , Hyun Chul Kim 1 , Maximo Lopez Lopez 2 , Jiyoung Kim 1 , Robert Wallace 1
1 Materials Science and Engineering, University of Texas at Dallas, Richardson, Texas, United States, 2 Department of Physics, CINVESTAV-IPN, Mexico City Mexico

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10:30 AM - C10.6
Interface and Electrical Properties of Atomic-layer-deposited HfAlO Gate Dielectric for n-channel GaAs MOSFETs.

Rahul Suri 1 , Daniel Lichtenwalner 2 , Veena Misra 1
1 Electrical and Computer Engineering, North Carolina State University, Raleigh, North Carolina, United States, 2 Materials Science and Engineering, North Carolina State University, Raleigh, North Carolina, United States

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10:45 AM -
BREAK