Meetings & Events

 

Spring 2009 Logo2009 MRS Spring Meeting & Exhibit



April 13-17, 2009
| San Francisco
Meeting Chairs: Paul R. Besser, Peter Fratzl, Nicola Spaldin, Terry M. Tritt

Symposium D : Materials, Processes, and Reliability for Advanced Interconnects for Micro- and Nano-Electronics

2009-04-14   Show All Abstracts

Symposium Organizers

Alfred Grill IBM T. J. Watson Research Center
Martin Gall Freescale Semiconductor
Francesca Iacopi IMEC
Junichi Koiki Tohoku University
Takamasi Usui Toshiba America Electronic Components, Inc
D1: Low-k Dielectrics 1
Session Chairs
Alex Demos
Alfred Grill
Tuesday AM, April 14, 2009
Room 2003 (Moscone West)

9:15 AM -
Opening Comments and Remarks

9:30 AM - **D1.1
Photo-Patternable Low-κ Dielectrics: New Materials for ``Greener" Semiconductor Manufacturing.

Qinghuang Lin 1 , A. Nelson 2 , P. Brock 2 , S. Cohen 1 , B. Davis 2 , J. Gambino 3 , E. Liniger 1 , D. Neumayer 1 , Y. Ostrovski 1 , J. Patel 1 , E. Simonyi 1 , R. Sooriyakumaran 1 , S. Purushothaman 1 , R. Miller 2 , R. Wisnieff 1
1 , IBM Watson Research Center, Yorktown Heights, New York, United States, 2 , IBM Almaden Research, San Jose, California, United States, 3 , IBM Systems &Technology Group, Essex Junction, Vermont, United States

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10:00 AM - D1.2
Photo-definition of UV-cured Epoxy Siloxane Polymers.

Pei-I Wang 1 , Dexian Ye 1 , Toh-Ming Lu 1 , Ram Ghoshal 2 , Rajat Ghoshal 2
1 Center of Integrated Electronics, Rensselaer Polytechnic Institute, Troy, New York, United States, 2 , Polyset Co. Inc., Mechanicville, New York, United States

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10:15 AM - D1.3
Chemistry Effects on Properties and Integrability of Porous SiCOH Dielectrics for 45nm to 22 nm Technology Nodes.

Alfred Grill 1 , S. Gates 1 , C. Dimitrakopoulos 1 , V. Patel 1 , S. Chen 2 , E. Ryan 3 , S. Cohen 1 , E. Simonyi 1 , E. Liniger 1 , Y. Ostrovski 1
1 , IBM - T.J.Watson Res.Ctr., Yorktown Heights, New York, United States, 2 , IBM at Albany Nanotech, Albany, New York, United States, 3 , Advanced Micro Devices, Albany, New York, United States

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10:30 AM - D1.4
Effect Of Trapping On Dielectric Conduction Mechanisms Of ULK/Cu Interconnects.

Virginie Verriere 1 2 , Cyril Guedj 2 , David Roy 1 , Alain Sylvestre 3
1 , STMicroelectronics, Crolles France, 2 , CEA, Grenoble France, 3 , CNRS, Grenoble France

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10:45 AM - D1.5
X-ray Photoelectron Spectroscopy used to Characterize Reactive Ion Etch polymer for 65/45nm Copper Interconnects.

Samuel Choi 1 , Chester Dziobkowski 2 , Tsong Lin Leo Tai 2
1 Research, IBM, Hopewell Junction, New York, United States, 2 SRDC, IBM, Hopewell Junction, New York, United States

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11:00 AM -
BREAK

11:30 AM - D1.6
Recombination of Oxygen and Hydrogen Atoms on the Surface of low-k Materials.

O. Braginsky 1 , A. Kovalev 1 , D. Lopaev 1 , E. Malykhin 1 , Yu Mankelevich 1 , T. Rakhimova 1 , A. Rakhimov 1 , A. Vasilieva 1 , S. Zyryanov 1 , Mikhail Baklanov 2
1 , Skobeltsyn Institute of Nuclear Physics of Moscow State University, Moscow Russian Federation, 2 AMPS, IMEC, Leuven Belgium

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11:45 AM - D1.7
Role of Ion, Photon, and Radical on Plasma Damage of Low-k Dielectrics.

Hualiang Shi 1 , Huai Huang 1 , Junjing Bao 1 , Ryan Smith 1 , Jay Im 1 , Paul Ho 1 , Yifeng Zhou 2 , Jeremiah Pender 2 , Michael Armacost 2 , David Kyser 2
1 Laboratory for Interconnect and Packaging, The University of Texas at Austin, Austin, Texas, United States, 2 , Applied Materials, Sunnyvale, California, United States

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12:00 PM - D1.8
Characterization of Plasma Damage in Low-k Films by TVS Measurements.

Ivan Ciofi 1 , Mikhail Baklanov 1 , Giovanni Calbo 1 , Zsolt Tokei 1 , Gerald Beyer 1
1 , IMEC, Leuven Belgium

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12:15 PM - D1.9
Three-dimensional Imaging of Pore Structures inside low-k Dielectrics by Electron Tomography.

Huolin Xin 1 , Peter Ercius 2 , David Muller 2
1 Department of Physics, Cornell University, Ithaca, New York, United States, 2 School of Applied and Engineering Physics, Cornell University, Ithaca, New York, United States

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12:30 PM - D1.10
Vibrational Spectroscopy of low-k films: Exploring the Potentiality of μ-Raman Characterization.

Francesca Clemente 1 , Mikhail Baklanov 1 , Adam Urbanowicz 1 , Thomas Hantschel 1
1 , IMEC, Leuven Belgium

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D3: Poster Session: Interconnects
Session Chairs
Francesca Iacopi
Junichi Koike
Tuesday PM, April 14, 2009
Exhibition Hall (Moscone West)

6:00 PM - D3.1
Zeolite-inspired Low-k Dielectrics: Dependence on Synthesis Conditions.

Salvador Eslava 1 2 , Jone Urrutia 1 , Abheesh Busawon 4 1 , Mikhail Baklanov 1 , Francesca Iacopi 1 , Karen Maex 3 1 , Christine Kirschhock 2 , Johan Martens 2
1 , IMEC, Leuven Belgium, 2 Center for Surface Science and Catalysis, Katholieke Universiteit Leuven, Leuven Belgium, 4 , Imperial College London, London United Kingdom, 3 Electrical Dept. (ESAT-INSYS), Katholieke Universiteit Leuven, Leuven Belgium

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6:00 PM - D3.10
CVD of Transition Metal Diboride Diffusion Barriers for Next Generation Interconnects.

Navneet Kumar 1 , Angel Yanguas-Gil 1 , Scott Daly 2 , John Abelson 1 , Gregory Girolami 2
1 Materials Sci and Eng, University of Illinois Urbana-Champaign, Urbana, Illinois, United States, 2 Chemistry, University of Illinois Urbana-Champaign, Urbana, Illinois, United States

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6:00 PM - D3.11
Thermal Stability of Cu Interconnect.

Suk Hoon Kang 1 , Jung Han Kim 1 , Hee-Suk Chung 1 , Kyu Hwan Oh 1 , Woong Ho Bang 2 , Liangshan Chen 2 , Choong-Un Kim 2
1 , Seoul National University, Seoul Korea (the Republic of), 2 , University of Texas, Arlington, Texas, United States

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6:00 PM - D3.12
Mechanical Stability of Air-gap Interconnects.

Xuefeng Zhang 1 , Suk-Kyu Ryu 2 , Daniel Chen 2 , Rui Huang 2 , Paul Ho 1 , Junjun Liu 3 , Dorel Toma 3
1 Microelectronics Reseach Center, UT Austin, Austin, Texas, United States, 2 Aerospace Engineering and Engineering Mechanics , UT Austin, Austin, Texas, United States, 3 , Tokyo Electron US Holdings, Austin, Texas, United States

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6:00 PM - D3.13
The Study of Cu/Hydrogen Silsesquioxane Interconnects Fabricated by Hot-embossing.

Chih-Chieh Hsu 1 , Li-Wei Cheng 1 , Fon-Shan Huang 1
1 Electronics engineering, National Tsing Hua University, Hsinchu Taiwan

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6:00 PM - D3.16
Low-Frequency Noise Characterization of the Prototype Graphene Interconnects.

Guanxiong Liu 1 , Qinghui Shao 1 , Desalegne Teweldebrhan 1 , Alexander Balandin 1 , Sergey Roumyantsev 2 , Michael Shur 2
1 Electrical Engineering and Materials Science and Engineering, University of California Riverside, Riverside, California, United States, 2 Electrical, Computer and Systems Engineering, Rensselaer Polytechnic Institute, Troy, New York, United States

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6:00 PM - D3.2
Characterization of Electrical Properties of Spin-on Dielectric used for sub-60nm Technology and Beyond.

Wan-Gyu Lee 1 , Boo Tak Lim 1 , Hee Kyoung Bae 1
1 Technology Application Team, National NanoFab Center, Daejeon Korea (the Republic of)

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6:00 PM - D3.20
Interfacial Adhesion of Single Glass Fiber/Gradient CNT-Epoxy Nanocomposites using Electro-Micromechanical Technique and Wettability

Joung-Man Park 1 4 , Zuojia Wang 1 , Jung-Hoon Jang 1 , Jin-Woo Kim 1 , Woo-Il Lee 2 , Jong-Kyoo Park 3 , Lawrence DeVries 4
1 School of MaterialsScience and Engineering, Gyeongsang National University , Jinju, Gyungnam, Korea (the Republic of), 4 Department of Mechanical Engineering, University of Utah, Salt Lake City, Utah, United States, 2 School of Mechanical and Aerospace Engineering, Seoul National University, Seoul Korea (the Republic of), 3 , Agency for Defense Development, Daejeon Korea (the Republic of)

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6:00 PM - D3.3
Curing Tool and Precursor Solution for Self-Assembled Scalable Porous Silica Low-k Films.

Hirakawa Masaaki 1 , Asahina Shinichi 1 , Yamazaki Takahisa 1 , Nakayama Takahiro 1 , Murakami Hirohiko 1
1 , ULVAC, Inc., Suyama, Susono, Shizuoka Japan

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6:00 PM - D3.4
Low-k Materials Processible in Benign Solvents.

Eisuke Murotani 1 2 , Jin Kyun Lee 1 , Margarita Chatzichristidi 1 , Alexander Zakhidov 1 , Priscilla Taylor 1 , Christopher Ober 1
1 Materials Science and Engineering, Cornell University, Ithaca, New York, United States, 2 R&D Center, Asahi Glass Co.,Ltd, Yokohama Japan

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6:00 PM - D3.5
Electrical Resistivity and Morphology of Thin TiN Films Grown by dc magnetron Sputtering on SiO2.

Fridrik Magnus 1 , Jon Agustsson 2 , Arni Ingason 1 , Christophe Gineste 1 , Unnar Arnalds 3 , Sveinn Olafsson 1 , Jon Gudmundsson 1 4
1 Science Institute, University of Iceland, Reykjavik Iceland, 2 , Mentis Cura ehf, Reykjavik Iceland, 3 , Matvice ehf, Reykjavik Iceland, 4 Department of Electrical and Computer Engineering, University of Iceland, Reykjavik Iceland

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6:00 PM - D3.7
A Study of Diffusion Barrier Characteristics of Electroless Co(W,P) Layers to Lead-free SnAgCu Solder.

Hung-Chun Pan 1 , Tsung-Eong Hsieh 1
1 Department of Materials Science and Engineering, National Chiao Tung University, Hsinchu Taiwan

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6:00 PM - D3.8
Programming Characteristics of Two Metal Via Type Electrically Programmable Fuse.

Deok-kee Kim 1 , Jucheol Park 1 , Yoondong Park 1
1 , Samsung Electronics Company, Yongin, Gyeonggi-do, Korea (the Republic of)

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6:00 PM - D3.9
Impact of Cu Electrolyte on Filling and Resistivity of Cu Damascene Lines.

Anne Roule 1 , Vincent Carreau 1 , Emmanuel Deronzier 1 , Paul Henri Haumesser 1 , Sylvain Maitrejean 1
1 , CEA, LETI, MINATEC, Grenoble France

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6:00 PM -
D3.18 Transferred to D7.4

6:00 PM -
D3.14 Transferred to D4.4

2009-04-15   Show All Abstracts

Symposium Organizers

Alfred Grill IBM T. J. Watson Research Center
Martin Gall Freescale Semiconductor
Francesca Iacopi IMEC
Junichi Koiki Tohoku University
Takamasi Usui Toshiba America Electronic Components, Inc
D4: Metallization I
Session Chairs
Junichi Koike
Ehrenfried Zschech
Wednesday AM, April 15, 2009
Room 2003 (Moscone West)

9:30 AM - **D4.1
Challenges of Cu Contact Process for 32nm Technology and Beyond.

Hirofumi Watatani 1 , Shinichi Akiyama 1
1 , Fujitsu microelectronics limited, Kuwana Japan

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10:00 AM - D4.2
In-Situ FTIR Study of Atomic Layer Deposition of Ruthenium.

Sun Kyung Park 1 , Jin hee Kwon 1 , Yves Chabal 1 , Min Dai 2 , Ravi Kanjolia 3
1 Material Science and Engineering, University of Texas at Dallas, Dallas, Texas, United States, 2 Department of Physics, Rutgers University, Piscataway, New Jersey, United States, 3 , SAFC Hitech, Haverhill, Massachusetts, United States

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10:15 AM - D4.3
Selective Cobalt Capping of Interconnects by Thermal CVD.

Harish Bhandari 1 , Roy Gordon 1
1 Chemistry and Chemical Biology, Harvard University, Cambridge, Massachusetts, United States

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10:30 AM - D4.4
Coupled Finite Element Potts Model Simulations of Grain Structure and Texture Evolution in Copper Electro-deposits.

Bala Radhakrishnan 1 , Gorti Sarma 1 , Don Nicholson 1
1 Computer Science and Mathematics, Oak Ridge National Laboratory, Oak Ridge, Tennessee, United States

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10:45 AM - D4.5
Simulation of Interconnect Microstructures

Anthony Rollett 1 , Balasubramanian Radhakrishnan 2 , Katyun Barmak 1
1 Materials Sci & Eng, Carnegie Mellon Univ., Pittsburgh, Pennsylvania, United States, 2 , Oak Ridge National Lab., Oak Ridge, Tennessee, United States

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11:00 AM - *
BREAK

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11:30 AM - D4.6
In-situ Characterization of Atomic Layer Deposition of Cu.

Min Dai 1 , Jinhee Kwon 1 , Yves Chabal 1 , Roy Gordon 2
1 Department of Materials Science and Engineering, University of Texas at Dallas, Richardson, Texas, United States, 2 Department of Chemistry and Chemical Biology, Harvard University, Cambridge, Massachusetts, United States

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11:45 AM - D4.7
Chemical Vapor Deposition of Copper Thin Film Using a Novel Unfluorinated Precursor of Copper(I)(N(1(dimethylvinylsiloxy)-1-methylethano)-2-imino-4-pentanoate).

Haizheng Song 1 , John A.T. Norman 2 , Yukihiro Shimogaki 1
1 Department of Materials Engineering, The University of Tokyo, Tokyo Japan, 2 , Air Products and Chemicals, Inc., Carlsbad, California, United States

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12:00 PM - D4.8
Materials Engineering for Future Interconnects: Direct Electroless Cu Deposition on Self-assembled Monolayer Alternative Barriers.

Silvia Armini 1 , Ainhoa Gorrono 1 , Caroline Whelan 1 , Arantxa Maestre Caro 1 2
1 AMPS, IMEC, Leuven Belgium, 2 Chemistry, KU Leuven, Leuven, Vlaams Brabant, Belgium

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12:15 PM - D4.9
Rutherford Backscattering Spectrometry Analysis of Growth Rate and Activation Energy for Self-formed Ti-rich Interface Layers in Cu(Ti)/Low-k Samples.

Kazuyuki Kohama 1 , Kazuhiro Ito 1 , Kenichi Mori 2 , Kazuyoshi Maekawa 2 , Yasuharu Shirai 1 , Masanori Murakami 3
1 Materials Science and Engineering, Kyoto University, Kyoto Japan, 2 Process Technology Development Div., Renesas Technology Corporation, Itami Japan, 3 , The Ritsumeikan Trust, Kyoto Japan

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12:30 PM - D4.10
Adhesion and Cu Diffusion Barrier Properties of a MnOx Barrier Layer Formed with Thermal MOCVD.

Koji Neishi 1 , Vijay Dixit 1 , Shiro Aki 1 , Junichi Koike 1 , Kenji Matsumoto 2 , Hiroshi Sato 2 , Hitoshi Itoh 2 , Shigetoshi Hosaka 2
1 Materials Scinece, Tohoku University, Sendai Japan, 2 Technology Development Center, Tokyo Electron Ltd., Nirasaki Japan

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12:45 PM - D4.11
Electronic Transport Properties of Cu/MnOx/SiO2/p-Si MOS Devices.

Vijay Dixit 1 , K. Neishi 1 , J. Koike 1
1 Material Science, Tohoku University, Sendai Japan

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2009-04-16   Show All Abstracts

Symposium Organizers

Alfred Grill IBM T. J. Watson Research Center
Martin Gall Freescale Semiconductor
Francesca Iacopi IMEC
Junichi Koiki Tohoku University
Takamasi Usui Toshiba America Electronic Components, Inc
D7: Emerging Interconnect Technologies
Session Chairs
Francesca Iacopi
Dorel Toma
Thursday PM, April 16, 2009
Room 2003 (Moscone West)

2:30 PM - **D7.1
Molecular Engineering of Surfaces for Future Device Architectures using Self-assembled Monolayers.

Caroline Whelan 1
1 SPDT, IMEC, Leuven Belgium

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3:00 PM - D7.2
Toughening Copper-silica Interfaces by Metal-catalyzed Molecular Ring Opening in a Nanolayer.

Saurabh Garg 1 , Binay Singh 1 , Xinxing Liu 2 , Pethuraja Ganesan 1 , Leonard Interrante 2 , Ganapathiraman Ramanath 1
1 Materials Engineering, Rensselaer Polytechnic Institute, Troy, New York, United States, 2 Chemistry and Chemical Biology, Rensselaer Polytechnic Institute, Troy, New York, United States

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3:15 PM - D7.3
Self Assembly of Organic Monolayers as Protective and Conductive Bridges for Nanometric Surface-Mount Applications

Ilia Platzman 1 , Hossam Haick 1 2 , Rina Tannenbaum 1 2 3
1 Chemical Engineering, Technion- Israel Institute of Technology, Haifa Israel, 2 Russell Berrie Nanotechnology Institute, Technion – Israel Institute of Technology, Haifa Israel, 3 School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta, Georgia, United States

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3:45 PM - D7.5
Plasma-Assisted Etching of Copper Films at Low Temperature

Fangyu Wu 1 , Dennis Hess 1 , Galit Levitin 1
1 School of Chemical & Biomolecular Engineering, Georgia Institute of Technology, Atlanta, Georgia, United States

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4:00 PM -
BREAK

4:30 PM - **D7.6
Multi-layer Graphene Grown by Low Temperature CVD for Advanced Carbon-based Interconnects.

Mizuhisa Nihei 1 2 5 , Motonobu Sato 1 2 5 , Daiyu Kondo 1 2 5 , Shintaro Sato 1 2 5 , Shuichi Ogawa 3 5 , Yuji Takakuwa 3 5 , Eiji Ikenaga 4 5 , Yuji Awano 1 2
1 , Fujitsu Laboratories Ltd., Atsugi Japan, 2 , Fujitsu Limited, Atsugi Japan, 5 , CREST/JST, Tokyo Japan, 3 , Tohoku Univ., Sendai Japan, 4 , JASRI, Hyogo Japan

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5:00 PM - D7.7
Single-Layer and Bi-Layer Graphene Interconnects: High-Temperature Performance.

Qinghui Shao 1 , Guanxiong Liu 1 , Desalegne Teweldebrhan 1 , Alexander Balandin 1
1 Nano-Device Laboratory, Department of Electrical Engineering and Materials Science and Engineering Program, University of California - Riverside, Riverside, California, United States

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5:15 PM - D7.8
Rational Carbon Nanotube Growth for Interconnect via Fabrication.

Xuhui Sun 1 , Tsutomu Saito 1 , Ke Li 1 , Dinh Nguyen 1 , Cary Yang 1
1 Center for Nanostructures, Santa Clara University, Santa Clara, California, United States

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5:30 PM - D7.9
Contact Resistance in Carbon Nanotube Interconnect Vias.

Ke Li 1 , Xuhui Sun 1 , Raymond Wu 1 , Wen Wu 1 , Shoba Krishnan 1 , Cary Yang 1
1 Center for Nanostructures, Santa Clara University, Santa Clara, California, United States

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5:45 PM - D7.10
Integration of Hollow Metal Waveguides and Beam Splitters for Photonic Interconnect.

Jong-Souk Yeo 1 , Robert Bicknell 1 , Pavel Kornilovitch 1 , Lenward Seals 1 , Laura King 1 , Michael Tan 2 , Paul Rosenberg 2 , Sagi Mathai 2 , Huei-Pei Kuo 2
1 Imaging and Printing Group, Hewlett-Packard Company, Corvallis, Oregon, United States, 2 HP Labs, Hewlett-Packard Company, Palo Alto, California, United States

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2009-04-17   Show All Abstracts

Symposium Organizers

Alfred Grill IBM T. J. Watson Research Center
Martin Gall Freescale Semiconductor
Francesca Iacopi IMEC
Junichi Koiki Tohoku University
Takamasi Usui Toshiba America Electronic Components, Inc
D8/F6: Joint Session: Interconnect and Packaging
Session Chairs
Alfred Grill
Paul Ho
Friday AM, April 17, 2009
Room 2003 (Moscone West)

9:30 AM - **D8.1/F6.1
Reconfigurable 3-D Integration and Super Chip.

Mitsumasa Koyanagi 1
1 Department of Bioengineering and Robotics, Tohoku University, Sendai Japan

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10:00 AM - D8.2/F6.2
Low Temperature Direct Cu-Cu Immersion Bonding for 3D Integration.

Rahul Agarwal 1 , Wouter Ruythooren 1 , Ingrid DeWolf 1
1 Process Technology, IMEC, Leuven Belgium

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10:15 AM - D8.3/F6.3
Thermo-Mechanical Reliability of 3-D Interconnect with Through-Si-Vias.

Xuefeng Zhang 1 , Kuan-Hsun Lu 1 , Suk-Kyu Ryu 2 , Jay Im 1 , Rui Huang 2 , Paul Ho 1
1 Microelectronics Research Center, UT Austin, Austin, Texas, United States, 2 Aerospace Engineering and Engineering Mechanics, UT Austin, Austin, Texas, United States

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10:30 AM - D8.4/F6.4
Failure Analysis and Process Improvement for Through Silicon Via Interconnects.

Bivragh Majeed 1 , Marc Van Cauwenberghe 2 , Deniz Tezcan 1 , Philippe Soussan 1
1 IPSI, IMEC, Leuven Belgium, 2 AMPS, IMEC, Leuven Belgium

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10:45 AM - D8.5/F6.5
Effects of Thinned Multi-stacked Wafer Thickness on Stress Distribution in the Wafer-on-a-Wafer (WOW) Structure.

Hideki Kitada 1 , Nobuyuki Maeda 1 , Koji Fujimoto 2 , Kousuke Suzuki 2 , Tomoji Nakamura 3 , Takayuki Ohba 1
1 , The University of Tokyo, Tokyo Japan, 2 , Dai Nippon Printing, Kashiwa Japan, 3 , Fujitsu Laboratories Ltd, Atsugi Japan

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11:00 AM -
BREAK

11:30 AM - **D8.6/F6.6
Power Delivery, Signaling and Cooling in 3D Integrated Systems.

Muhannad Bakir 1
1 MiRC, Georgia Tech, Atlanta, Georgia, United States

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12:00 PM - D8.7/F6.7
Copper Deposition Technology for Thru Silicon Via Formation Using Supercritical Carbon Dioxide Fluids Using a Flow Type Reaction System.

Masahiro Matsubara 1 , E. Kondoh 1
1 , University of Yamanashi, Kofu Japan

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12:15 PM - D8.8/F6.8
Fully Low Temperature (350°C) Processed Si PMOSFET with Poly-Ge Gate, Radical Oxidation of Gate-Oxide and Schottky Source/Drain for Monolithic 3D-ICs.

Munehiro Tada 1 2 , Jin-Hong Park 1 , Duygu Kuzum 1 , Gaurav Thareja 1 , Yoshio Nishi 1 , Krishna Saraswat 1
1 , Stanford University, Palo Alto, California, United States, 2 , NEC corporation, Sagamihara Japan

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12:30 PM - D8.9/F6.9
Metal-Induced Dopants Activation (MIDA) on Amorphous Germanium for Monolithic 3D-ICs.

Jin-Hong Park 1 , Munehiro Tada 1 2 , Kyeongran Yoo 1 , Woo-Shik Jung 1 , H. -S. Philip Wong 1 , Krishna Saraswat 1
1 Electrical Engineering, Stanford University, Stanford, California, United States, 2 Device Platforms Research Laboratories, NEC corporation, Sagamihara, Kanagawa, Japan

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