Meetings & Events

 

Spring 2009 Logo2009 MRS Spring Meeting & Exhibit



April 13-17, 2009
| San Francisco
Meeting Chairs: Paul R. Besser, Peter Fratzl, Nicola Spaldin, Terry M. Tritt

Symposium O : Compound Semiconductors for Energy Applications and Environmental Sustainability

2009-04-14   Show All Abstracts

Symposium Organizers

F. (Shadi) Shahedipour-Sandvik State University of New York-Albany
E. Fred Schubert Rensselaer Polytechnic Institute
L. Douglas Bell Jet Propulsion Laboratory
Vinayak Tilak General Electric Global Research Center
Andreas W. Bett Fraunhofer-Institut for Solar Energy Systems
O4: Poster Session: Compound Semiconductor for Lighting, Power and Sensing
Session Chairs
Tuesday PM, April 14, 2009
Exhibition Hall (Moscone West)

6:00 PM - O4.1
Characterization and Fabrication of InGaN-based Blue LED with Underlying AlGaN/GaN SLS Cladding Layer Grown on Si(111) Substrate.

Bin Abu Bakar Ahmad Shuhaimi 1 2 , Pum Chian Khai 1 2 , Takaaki Suzue 1 2 , Yukiyasu Nomura 1 2 , Takashi Egawa 1 2
1 Research Center for Nano-Device and System, Nagoya Institute of Technology, Nagoya, Aichi, Japan, 2 Department of Engineering Physics, Electronics and Mechanics, Nagoya Institute of Technology, Nagoya, Aichi, Japan

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6:00 PM - O4.11
Reproducible p-type Activation in Acceptor Ion-implanted GaN by High-temperature Ultra-fast Microwave Annealing.

Geetha Aluri 1 , Madhu Gowda 1 , Nadeem Mahadik 1 , Siddharth Sundaresan 1 , Hany Issa 1 , Mulpuri Rao 1 , Jaime Freitas 2 , Syed Qadri 2 , Yong-Lai Tian 3
1 Electrical and Computer Engineering, George Mason University, Fairfax, Virginia, United States, 2 , Naval Research Laboratory, Washington, District of Columbia, United States, 3 , LT Technologies, Fairfax, Virginia, United States

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6:00 PM - O4.12
Growth and Characterization of a-plane GaN Grown on r-plane Sapphire.

Yong Gon Seo 1 2 , Moon Suhk Suh 1 , Hyung Do Yoon 1 , Sung Min Hwang 1 , Kyunghwan Oh 2
1 Energy Nano Materials Research Center, KETI, Seongnam-si, Gyeonggi-do, Korea (the Republic of), 2 Institute of Physics and Applied Physics, Yonsei University, Seoul Korea (the Republic of)

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6:00 PM - O4.13
Effect of Substrate Engineering of AlN/Si(111) Substrates on Overgrown GaN, AlGaN, and InGaN films.

Mihir Tungare 1
1 College of Nanoscale Science and Engineering, University at Albany, SUNY, Albany, New York, United States

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6:00 PM - O4.2
Novel Pulsed Laser Deposited Y-doped BaZrO3 Thin Films for High Temperature Humidity Sensors.

XiaoXin Chen 1 , Loren Rieth 1 , Mark Miller 1 , Florian Solzbacher 1 2 3
1 Dept of Electrical and Computer Engineering, University of Utah, Salt Lake City, Utah, United States, 2 Dept of Material Science and Engineering, University of Utah, Salt Lake City, Utah, United States, 3 Dept of Bioengineering, University of Utah, Salt Lake City, Utah, United States

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6:00 PM - O4.3
Nonthermal Plasma Synthesis of Luminescent InP Nanocrystals

Ryan Gresback 1 , Uwe Kortshagen 1
1 Mechanical Engineering, University of Minnesota, Minneapolis, Minnesota, United States

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6:00 PM - O4.5
In-situ Study of the Kinetics and Durability of Semiconducting Pd-hydride Formation for Integrated Hydrogen Sensor Applications.

Renaud Delmelle 1 , Marie-Stephane Colla 1 , Thomas Pardoen 1 , Joris Proost 1
1 Division of Materials and Process Engineering, Université catholique de Louvain, Louvain-la-Neuve Belgium

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6:00 PM - O4.7
Growth by Molecular Beam Epitaxy of GaNAs Alloys with High As Content for Potential Photoanode Applications in Hydrogen Production.

Sergey Novikov 1 , C. Staddon 1 , A. Akimov 1 , R. Campion 1 , N. Zainal 1 , A. Kent 1 , C. Foxon 1 , C. Chen 2 , K. Yu 3 , W. Walukiewicz 3
1 School of Physics and Astronomy, University of Nottingham, Nottingham United Kingdom, 2 Photovoltaics Technology Center, Industrial Technology Research Institution, Taiwan 310 Taiwan, 3 Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California, United States

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6:00 PM - O4.8
Ultrafast Electron-Hole Dynamics in Core/Shell CdSe/CdS Dot/Rod Nanocrystals.

Maria Grazia Lupo 2 1 , Fabio Della Sala 2 , Luigi Carbone 2 , Margherita Zavelani-Rossi 1 , Roberto Cingolani 2 , Liberato Manna 2 , Guglielmo Lanzani 1
2 , National Nanotechnology Laboratory of CNR-INFM, Lecce Italy, 1 , Politecnico di Milano, Milano Italy

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2009-04-15   Show All Abstracts

Symposium Organizers

F. (Shadi) Shahedipour-Sandvik State University of New York-Albany
E. Fred Schubert Rensselaer Polytechnic Institute
L. Douglas Bell Jet Propulsion Laboratory
Vinayak Tilak General Electric Global Research Center
Andreas W. Bett Fraunhofer-Institut for Solar Energy Systems
O6: Compound Semiconductor for Sensing
Session Chairs
L. Douglas Bell
F. (Shadi) Shahedipour-Sandvik
Wednesday PM, April 15, 2009
Room 2024 (Moscone West)

2:30 PM - **O6.1
Nanostructuring Bulk Semiconductors for Solid State Energy Conversion

Jean-Pierre Fleurial 1 , Pawan Gogna 1 , Gang Chen 2 , Mildred Dresselhaus 2 , Hohyun Lee 2 , Zhifeng Ren 3 , Dezhi Wang 3 , Sabah Bux 4 , Daniel King 4 , Richard Kaner 4
1 Power Systems Section, Jet Propulsion Laboratory, Pasadena, California, United States, 2 Mechanical Engineering Department, Massachusetts Institute of Technology, Cambridge, Massachusetts, United States, 3 Physics Department, Boston College, Chestnut Hill, Massachusetts, United States, 4 Department of Chemistry and Biochemistry and California NanoSystems Institute, University of California at Los Angeles, Los Angeles, California, United States

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3:00 PM - **O6.2
Quantum Structure MBE Growth for Infrared Sensor Applications at the Jet Propulsion Laboratory.

Cory Hill 1
1 Jet Propulsion Laboratory, California Institute of Technology, Pasadena, California, United States

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3:30 PM - O6.3
A III-nitride Layered Barrier Structure for Hyperspectral Imaging Applications.

Douglas Bell 1 , Neeraj Tripathi 2 , Fatemeh Shahedipour-Sandvik 2 , Vibhu Jindal 2 , James Grandusky 2
1 M/S 302-231, Jet Propulsion Laboratory, Pasadena, California, United States, 2 College of Nanoscale Science and Engineering, University at Albany, Albany, New York, United States

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3:45 PM -
BREAK

4:15 PM - O6.4
AlGaN/GaN HEMT Devices for Biosensing Applications.

Vibhu Jindal 1 , Neeraj Tripathi 1 , Xiobin Xu 1 , Hua Shi 2 , Magnus Bergkvist 1 , Nathaniel Cady 1 , Fatemeh Shahedipour-Sandvik 1
1 College of Nanoscale Science and Engineering, University at Albany, Albany, New York, United States, 2 Department of Biological Sciences, University at Albany, Albany, New York, United States

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4:30 PM - O6.5
Passivation and Functionalization of III-V Semiconductors.

Rory Stine 1 , Edward Aifer 1 , Lloyd Whitman 1 , Dmitri Petrovykh 1 2
1 , Naval Research Laboratory, Washington, District of Columbia, United States, 2 , University of Maryland, College Park, Maryland, United States

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4:45 PM - O6.6
High-Temperature Detection of Nitrogen Oxides by Indium Oxide Solid State Sensors with Gold Promoter Layers.

Srinivasan Kannan 1 , Loren Rieth 1 , Florian Solzbacher 1
1 Department of Electrical and Computer Engineering, University of Utah, Salt Lake City, Utah, United States

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5:00 PM - O6.7
Polarization Effects on III-nitride Based Tunnel Barriers.

Neeraj Tripathi 1 , Vibhu Jindal 1 , Fatemeh Shahedipour-Sandvik 1 , Lloyd Bell 2
1 College of Nanoscale Science and Engineering, University at Albany, State University of New York, Albany, New York, United States, 2 Jet Propulsion Laboratory, California Institute of Technology, Pasadena, California, United States

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2009-04-16   Show All Abstracts

Symposium Organizers

F. (Shadi) Shahedipour-Sandvik State University of New York-Albany
E. Fred Schubert Rensselaer Polytechnic Institute
L. Douglas Bell Jet Propulsion Laboratory
Vinayak Tilak General Electric Global Research Center
Andreas W. Bett Fraunhofer-Institut for Solar Energy Systems
O7: Materials Growth and Characterization
Session Chairs
Kris Bertness
James Grandusky
Thursday AM, April 16, 2009
Room 2024 (Moscone West)

9:15 AM - **O7.1
In-situ Measurement of Tensile Stress Generation from Dopant-induced Dislocation Inclination in MOCVD-grown AlGaN Thin Films.

Joan Redwing 1 3 , Ian Manning 1 2 , Jeremy Acord 2 , Xiaojun Weng 2 3 , Mark Fanton 2 , David Snyder 2
1 Materials Science and Engineering, Penn State University, University Park, Pennsylvania, United States, 3 Materials Research Institute, Penn State University, University Park, Pennsylvania, United States, 2 Electro-Optics Center, Penn State University, Freeport, Pennsylvania, United States

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9:45 AM - O7.2
Growth and Characterization of a-plane AlGaN Films on r-plane Sapphire by Metalorganic Chemical Vapor Deposition.

Huei-Min Huang 1 , Jun-Rong Chen 1 , Shih-Chun Ling 1 , Tsung-Shine Ko 1 , Tien-Chang Lu 1 , Hao-Chung Kuo 1 , Shing-Chung Wang 1
1 Photonics, Nation ChiaoTung university, Hsinchu Taiwan

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10:00 AM - O7.3
Property Enhancement in a-plane GaN having Multiple SiNx or InN Interlayers.

Hsin-Hsien Wu 1 , Jyh-Ming Ting 1
1 Department of Materials Science and Engineering, National Cheng Kung University, Tainan Taiwan

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10:15 AM - O7.4
Crystalline Perfection of Epitaxial Structure: Correlations with Growth Rate, Thickness, and Elastic Strain of Epitaxial Layers.

Balakrishnam Jampana 1 , Nikolai Faleev 2 , Ian Ferguson 4 , Robert Opila 1 , Christiana Honsberg 3
1 Materials Science and Engg., University of Delaware, Newark, Delaware, United States, 2 Electrical and Computer Engg., University of Delaware, Newark, Delaware, United States, 4 School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, Georgia, United States, 3 Electrical Engineering, Arizona State University, Tempe, Arizona, United States

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10:30 AM - O7.5
Investigation of Composition-dependent Optical Phonon Modes in AlxGa1-xN Epitaxial Layers Grown on Sapphire Substrates.

Jun-Rong Chen 1 , Tien-Chang Lu 1 , Hao-Chung Kuo 1 , Shing-Chung Wang 1
1 Photonics and Institute of Electro-Optical Engineering, National Chiao Tung University, Hsinchu Taiwan

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10:45 AM -
O7.6 Transfer to O4.13

11:00 AM -
BREAK

11:30 AM - **O7.7
Defects in Bulk ZnO.

Matt McCluskey 1
1 , Washington State University, Pullman, Washington, United States

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12:00 PM - O7.8
Defect and Interface Properties of Epitaxial ZnO on (111) Si Substrates.

Wei Guo 1 , Michael Katz 1 , Christopher Nelson 1 , Tassilo Heeg 2 4 , Darrell Schlom 2 4 , Bing Liu 3 , Yong Che 3 , Xiaoqing Pan 1
1 Material Science and Engineering, University of Michigan, Ann Arbor, Michigan, United States, 2 Material Science and Engineering, Pennsylvania State University, University Park, Pennsylvania, United States, 4 Department of Materials Science and Engineering, Cornell University, Ithaca, New York, United States, 3 Materials Research Group, IMRA America, Inc., Ann Arbor, Michigan, United States

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12:15 PM - O7.9
ZnO Epitaxial Film Growth on Sapphire Substrates by Chemical Vapor Deposition.

Zhuo Chen 1 , Tom Salagaj 2 , Christopher Jsesen 2 , Karlheinz Strobl 2 , Mim Nakarmi 1 , Kai Shum 1
1 Physics, Brooklyn College - CUNY, Brooklyn, New York, United States, 2 , First Nano, a Division of CVD Equipment Corp., Ronkonkoma, New York, United States

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12:30 PM - O7.10
The Oxygen Terminated Epitaxial ZnO Ultra-thin Film on c-plane Al2O3 by Atomic Layer Deposition.

Song Yang 1 , Bi-Hsuan Lin 1 2 , Wei-Ren Liu 1 2 , Jian-Huei Lin 1 , Chia-Hong Hsu 2 1 , Cheng-Siung Chang 1 , Wen-Feng Hsieh 1
1 Department of Photonics and Institute of Electro-Optical Engineering, National Chiao Tung, Hsinchu Taiwan, 2 , National Synchrotron Radiation Research Center, Hsinchu Taiwan

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