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Spring 2010 Logo2010 MRS Spring Meeting & Exhibit

April 5-9, 2010 | San Francisco
Meeting Chairs: Anne C. Dillon, Robin W. Grimes, Paul C. McIntyre, Darrin J. Pochan

Symposium G : Materials and Physics of Nonvolatile Memories

2010-04-05   Show All Abstracts

Symposium Organizers

Caroline Bonafos CEMES/CNRS
Yoshihisa Fujisaki Hitachi Ltd.
Eisuke Tokumitsu Tokyo Institute of Technology
Panagiotis Dimitrakis NCSR "Demokritos"
G1: Nano-Crystal Memory I
Session Chairs
Thierry Baron
Caroline Bonafos
Yann Leroy
Abdelillah Slaoui
Monday PM, April 05, 2010
Room 2011 (Moscone West)

9:30 AM - **G1.1
Nanocrystal Memories.

Thierry Baron 1 , Barbara De Salvo 2 , Gabriel Molas 2 , Pierre Mur 2 , Abdelkader Souifi 3 , Bassem Salem 1 , Karim Aissou 4 , Redouane Borsali 4 , Guillaume Gay 2
1 LTM, CNRS, Grenoble France, 2 Leti, CEA, Grenoble France, 3 INL, CNRS, Lyon France, 4 CERMAV, CNRS, Grenoble France

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10:00 AM - G1.2
Annealing Effects on Si Nanocrystal Nonvolatile Memories.

Panagiotis Dimitrakis 1 , C. Bonafos 2 , S. Schamm 2 , G. Ben Assayag 2 , P. Normand 1
1 Inst. of Microelectronics, NCSR Demokritos, Aghia Paraskevi Greece, 2 CEMES, CNRS, Universite de Toulouse, Toulouse Greece

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10:15 AM - G1.3
MOS Memory With High Density PtSi Nanocrystals.

Bei Li 1 , Jianlin Liu 1
1 Quantum Structures Laboratory, Electrical Engineering, University of California, Riverside, Riverside, California, United States

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10:30 AM - G1.4
Theoretical Characterization of a Nanocrystal Layer for Nonvolatile Memory Applications.

Yann Leroy 1 , Dumitru Armeanu 1 , Anne-Sophie Cordan 1
1 , InESS / CNRS-UdS, Illkirch France

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10:45 AM - G1.5
InGaAs Floating Quantum Dot Gate Non-volatile Memory Devices.

Pik-Yiu Chan 1 , Mukesh Gogna 1 , Ernesto Suarez 1 , Fuad Alamoody 1 , Supriya Karmakar 1 , Barry Miller 1 , John Ayers 1 , Faquir Jain 1
1 Electrical and Computer Engineering, University of Connecticut, Storrs, Connecticut, United States

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11:00 AM - G1: NCs
BREAK

11:30 AM - G1.6
Electrical Characterization of Low Energy Ge+ Implanted Si3N4 Films With HfO2/SiO2 Stack Tunnel Dielectric for Non-volatile Memory Application.

Bhabani Sahu 1 , Marzia Carrada 1 , Abdelillah Slaoui 1 , Pierre-Eugene Coulon 2 , Jesse Groenen 2 , Caroline Bonafos 2 , Sandrine Lhostis 3
1 InESS, InESS-UDS-CNRS, Strasbourg France, 2 Groupe Nanomat , CEMES-CNRS – Université de Toulouse, Toulouse France, 3 , ST Microelectronics, Crolles France

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11:45 AM - G1.7
Ultra-low Energy Ion Implantation of Si into SiO2 or SiN on Top of HfO2-based Layers for Non-volatile Memory Applications.

Pierre-Eugene Coulon 1 , Caroline Bonafos 1 , Gerard Benassayag 1 , Sylvie Schamm-Chardon 1 , Sandra Boussetta 1 , Beatrice Pecassou 1 , Abdelillah Slaoui 2 , Sahu Babhani 2 , Marzia Carrada 2 , Sandrine Lhostis 3
1 , CEMES, Toulouse France, 2 , InESS, Strasbourg France, 3 , ST Microelectronics, Crolles France

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12:00 PM - G1.8
Charge Trapping Sites in nc-RuO Embedded ZrHfO High-k Nonvolatile Memories.

Chen-Han Lin 1 , Yue Kuo 1
1 Thin Film Nano & Microelectronics Research Lab, Texas A&M University, College Station , Texas, United States

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12:15 PM - G1.9
Co/HfO2(Al2O3) Core Shell Nanocrystal Memory.

Huimei Zhou 1 , Jian Huang 1 , Jianlin Liu 1 , James Dorman 2 , Yuanbing Mao 2 , Ya-Chuan Perng 2 , Stephanie Gachot 2 , Jane Chang 2
1 Dept of Electrical Engineering, UC Riverside, Riverside, California, United States, 2 Department of Chemical Engineering, University of California. Los Angeles, Los Angeles, California, United States

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12:30 PM - **G1.10
Overview of Advanced 3D Charge-trapping Flash Memory Devices.

Hang-Ting Lue 1 , Kuang-Yeu Hsieh 1 , Rich Liu 1 , Chih-Yuan Lu 1
1 NanoTechnology R&D Department, Macronix International Co., Ltd., Hsinchu Taiwan

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G2: Advanced Flash I
Session Chairs
Albert Chin
Panagiotis Dimitrakis
Monday PM, April 05, 2010
Room 2011 (Moscone West)

2:45 PM - **G2.1
Local Charge Trapping Non-volatile Memories: First Ten Years.

Yakov Roizin 1
1 R&D, Tower Semiconductor Ltd., Migdal HaEmek Israel

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3:15 PM - G2.2
Stack Engineering of HfO2–based Charge Trapping Non-volatile Memory.

Ugo Russo 1 , Sabina Spiga 1 , Gabriele Congedo 1 , Alessio Lamperti 1 , Olivier Salicio 1 , Marco Fanciulli 1
1 Laboratorio MDM, CNR-INFM, Agrate Brianza Italy

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3:30 PM - G2.3
The Characterization of the Charge Trapping Device With TiO2 Charge Storage Layer.

Dong Seog Eun 1 , Sharon Cui 1 , Tso-Ping Ma 1
1 Electrical Engineering, Yale University, New Haven, Connecticut, United States

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4:00 PM - G2: Flash
G2.5 Transferred to G2.2

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4:00 PM - G2: Flash
BREAK

G3: MRAM I
Session Chairs
Yoshihisa Fujisaki
Bin Liu
Monday PM, April 05, 2010
Room 2011 (Moscone West)

4:30 PM - G3.1
Fabrication of 20nm Gap Magnetic Coupled Spin-torque Devices for Non-volatile Logic Applications.

Larkhoon Leem 1 , James Harris 1
1 , Stanford University, Menlo Park, California, United States

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4:45 PM - G3.2
Structural, Magnetic and Magneto-tranport Properties of Reactive-sputtered Fe3O4 Thin Films.

Xinghua Wang 1 , Peng Ren 1 , Wen Siang Lew 1
1 Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, 21 Nanyang Link,Singapore, 637371 Singapore

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5:00 PM - G3.3
Sol-gel-derived Epitaxial Nanocomposite Thin Films With Large Magnetoelectric Effect.

Bin Liu 1 , Tao Sun 1 , Jiaqing He 1 , Vinayak Dravid 1 2
1 Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois, United States, 2 International Institute of Nanotechnology, Northwestern University, Evanston, Illinois, United States

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2010-04-06   Show All Abstracts

Symposium Organizers

Caroline Bonafos CEMES/CNRS
Yoshihisa Fujisaki Hitachi Ltd.
Eisuke Tokumitsu Tokyo Institute of Technology
Panagiotis Dimitrakis NCSR "Demokritos"
G4: Organic I
Session Chairs
Panagiotis Dimitrakis
En-Tang Kang
Sashi Paul
Tuesday AM, April 06, 2010
Room 2011 (Moscone West)

10:00 AM - G4.2
Inkjet-printed Organic Non-volatile Memory Arrays Using Ferroelectric Field-effect Transistors.

Tse Nga Ng 1 , Jurgen Daniel 1 , Sanjiv Sambandan 1 , Raj Apte 1 , Ana Arias 1
1 Electronic Materials and Devices Lab, Palo Alto Research Center, Palo Alto, California, United States

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10:15 AM - G4.3
Structural, Magnetic and Magnetoresistive Properties of Organic Spin Valves With Tetraethyl Perylene Tetracarboxylate Spacer Layers.

Jean-Francois Bobo 1 , Benedicte Warot-Fonrose 2 , Christina Villeneuve 3 , Elena Bedel 3 , Isabelle Seguy 3
1 NMH-ONERA, CEMES-CNRS, Toulouse France, 2 nMat, CEMES-CNRS, Toulouse France, 3 LAAS, CNRS, Toulouse France

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10:30 AM - G4.4
Tunable Injection Barrier in Organic Resistive Switches Based on Phase Separated Ferroelectric-semiconductor Blends.

Kamal Asadi 1 , Tom de Boer 1 , Paul Blom 1 3 , Dago de Leeuw 1 2
1 Physics of Organic Semiconductors, University of Groningen, Groningen Netherlands, 3 , Holst Center, Eindhoven Netherlands, 2 , Philips Research Labs, Eindhoven Netherlands

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10:45 AM - G4.5
Resistive Switching Memory Based on Solid Polymer Electrolytes.

Tohru Tsuruoka 1 , Shouming Wu 1 , Kazuya Terabe 1 , Tsuyoshi Hasegawa 1 , Jonathan Hill 1 , Katsuhiko Ariga 1 , Masakazu Aono 1
1 , National Institute for Materials Science, Tsukuba Japan

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11:00 AM - G4: Organic
BREAK

11:30 AM - G4.6
Rewritable Switching Operation of 1 Diode-1 Resistor for Organic Memory Devices.

Byungjin Cho 1 , Tae-Wook Kim 1 , Sunghoon Song 1 , Yongsung Ji 1 , Minseok Jo 1 , Hyunsang Hwang 1 , Gun-Young Jung 1 , Takhee Lee 1
1 Department of Nanobio Materials and Electronics, Department of Materials Science and Engineering, Gwangju Institute of Science and Technology, Gwangju , Cheolanam-Do, Korea (the Republic of)

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11:45 AM - G4.7
Study on C60 Doped PMMA for Organic Memory Devices.

Micael Charbonneau 1 , Raluca Tiron 1 , Julien Buckley 1 , Mathieu Py 1 , Jean Paul Barnes 1 , Samir Derrough 1 , Gerard Ghibaudo 2 , Barbara De Salvo 1
1 Nanotec Division/ Advanced Memory Technologies Laboratory, CEA LETI MINATEC, Grenoble France, 2 , IMEP-LAHC, CNRS, MINATEC, Grenoble France

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12:00 PM - G4.8
Au Nanoparticle-Poly(N-vinylcarbazole) Colloids Hybrid Layer-based Flexible Nonvolatile Bistable Organic Memory (BOM).

Won Kook Choi 1 , Dong-Ik Son 1 , Dong-Hee Park 1
1 Thin Film Material Research Center, Korea Institute of Science and Technology, Seoul Korea (the Republic of)

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12:15 PM - G4.9
Enhanced Currents and Electrode Corrosion Induced by Field-absorbed Water in Cu/ P3HT/ Au Junctions.

Nikolaus Knorr 1 , Silvia Rosselli 1 , Rene Wirtz 1 , Gabriele Nelles 1
1 Materials Science Laboratory, SONY Deutschland GmbH, Stuttgart Germany

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12:30 PM - G4.10
Structure, Mechanism, and Programming Sequence for Repeatable Bipolar Resistive Electrical Switching of AgTCNQ-based Memory Cells.

Robert Mueller 1 , Jan Genoe 1 , Paul Heremans 1 2
1 Large Area Electronics, IMEC v.z.w., Leuven Belgium, 2 ESAT, KULeuven, Leuven Belgium

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12:45 PM - G4.11
Small Organic Molecules for Electrically Re-writable Non-volatile Polymer Memory Devices.

Iulia Salaoru 1 , S Paul 1
1 Emerging Technologies Research Centre, De Montfort University, Leicester United Kingdom

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G5: ReRAM I
Session Chairs
Panagiotis Dimitrakis
Cheol Seong Hwang
Daniele Ielimini
Sabina Spiga
Tuesday PM, April 06, 2010
Room 2011 (Moscone West)

2:30 PM - **G5.1
Resistance Switching in Transition Metal Oxides for Non-volatile Memory Application.

Sabina Spiga 1
1 Laboratorio MDM, CNR-INFM, Agrate Brianza Italy

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3:00 PM - G5.2
Atomic Scale Analysis of Resistive Switch in Pt/NiO/Pt Memory Cells.

Pauline Calka 1 , Eugenie Martinez 1 , Cyril Guedj 1 , Dominique Lafond 1 , Pascale Bayle-Guillemaud 2 , Blanka Detlefs 3 , Jerome Roy 3 , Joerg Zegenhagen 3
1 MINATEC, CEA, LETI, Grenoble France, 2 SPEM, CEA, INAC, Grenoble France, 3 , European Synchrotron Radiation Facility, Grenoble France

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3:15 PM - G5.3
Size-dependent Temperature Instability in NiO–based Resistive Switching Memory.

Daniele Ielmini 1 , Federico Nardi 1 , Carlo Cagli 1 , Andrea Lacaita 1
1 Dipartimento di Elettronica e Informazione, Politecnico di Milano, Milano, MI, Italy

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