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Spring 2010 Logo2010 MRS Spring Meeting & Exhibit

April 5-9, 2010 | San Francisco
Meeting Chairs: Anne C. Dillon, Robin W. Grimes, Paul C. McIntyre, Darrin J. Pochan

Symposium H : Phase-Change Materials for Memory and Reconfigurable Electronics Applications

2010-04-06   Show All Abstracts

Symposium Organizers

Paul Fons National Institute for Advanced Industrial Science and Technology
Kris Campbell Boise State University
Byung-ki Cheong Korea Institute of Science and Technology
Simone Raoux IBM T. J. Watson Research Center
Matthias Wuttig I. Physikalisches Institut der RWTH Aachen
H1: Theory I
Session Chairs
Paul Fons
Tuesday PM, April 06, 2010
Room 2009 (Moscone West)

9:15 AM - **H1.1
Electronic and Optical Properties of Ge-Sb-Te Phase Change Materials: A Simulation Point of View.

Jean-Yves Raty 1 , Celine Otjacques 1 , Rengin Pekoz 1 , Engin Durgun 1 , Jean-pierre Gaspard 1 , Matthieu Micoulaut 2 , Christophe Bichara 3
1 Physics Department, University of Liege, Sart-Tilman Belgium, 2 Laboratoire de Physique Theorique de la Matiere Condensee, Universite Pierre et Marie Curie, Paris France, 3 CINAM-CNRS, Universite Aix-Marseille, Marseille France

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9:45 AM - **H1.2
Understanding Phase-change Materials in Ge-Sb-Te System by First Principles Methods.

Zhimei Sun 1 , Jian Zhou 1 , Andreas Blomqvist 2 , Naihua Miao 1 , Baisheng Sa 1 , Borje Johansson 2 , Rajeev Ahuja 2
1 Department of Materials Science and Engineering, Xiamen University, Xiamen China, 2 Deparment of Physics and materials Science, Uppsala University, Uppsala Sweden

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10:15 AM - H1.3
Density Functional/Molecular Dynamics Simulations of Phase-change Materials: Characterization of Disordered Phases.

Jaakko Akola 1 2 , Robert Jones 1
1 Nanoscience Center, University of Jyväskylä, Jyväskylä Finland, 2 Department of Physics, Tampere Technological University, Tampere Finland

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10:30 AM - H1:Theory
BREAK

11:00 AM - H1.4
Understanding Amorphous Phase-change Materials from the Viewpoint of Maxwell Rigidity.

Matthieu Micoulaut 2 , Jean Yves Raty 3 , Celine Otjacques 3 , Christophe Bichara 1
2 Laboratoire de Physique Théorique de la Matière Condensée, Université Pierre et Marie Curie, Paris France, 3 Physique de la Matière Condensée, Université de Liège, Sart Tilman Belgium, 1 , CINaM CNRS, Marseille France

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11:15 AM - H1.5
Ab-initio Study of the Structural and Vibrational Properties of Amorphous Phase Change Materials: Sb2Te3, GeTe and InGeTe2.

Marco Bernasconi 1 , Sebastiano Caravati 2 , Riccardo Mazzarello 2 , Elena Spreafico 1 , Michele Parrinello 2
1 Materials Science, University of Milano-Bicocca, Milano Italy, 2 Chemistry and Applied Biosciences, ETHZ, Zurich Switzerland

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11:30 AM - H1.6
Resonant Bonding as the Cause of Optical Contrast in Phase Change Memory Materials.

John Robertson 1 , Bolong Huang 1
1 , Cambridge University, Cambridge United Kingdom

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11:45 AM - H1.7
Design of Phase-change Materials.

Dominic Lencer 1 , Martin Salinga 1 , Blazej Grabowski 2 , Tilmann Hickel 2 , Joerg Neugebauer 2 , Matthias Wuttig 1 3
1 I. Institute of Physics (IA), RWTH Aachen University, Aachen, NRW, Germany, 2 , Max-Planck Institute for Iron Research, Duesseldorf, NRW, Germany, 3 JARA-FIT, RWTH Aachen University, Aachen, NRW, Germany

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12:00 PM - H1.8
Structural and Dynamic Features from FPMD Calculations of Binary Sb-Te Alloys in Liquid and Amorphous Phases.

Celine Otjacques 1 , Jean-Pierre Gaspard 1 , Jean-Yves Raty 1
1 Département de Physique B5, University of Liège, Sart-Tilman Belgium

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12:15 PM - H1.9
Density Functional Simulation of Ag in Ge2Se3.

Arthur Edwards 1 , Kristy Campbell 2
1 AFRL/RVSE, Air Force Research Laboratory, Kirtland AFB, New Mexico, United States, 2 , Boise State University, Boise, Idaho, United States

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12:30 PM - H1.10
Atomistic Origins of the Phase Transition Mechanism in Ge2Sb2Te5.

Juarez L. F. Da Silva 1 3 , Aron Walsh 2 , Su-Huai Wei 3 , Hosun Lee 4
1 Institute of Physics of Sao Carlos, University of Sao Paulo, Sao Carlos, SP, Brazil, 3 Basic Science, National Renewable Energy Laboratory, Golden, Colorado, United States, 2 Department of Chemistry, University College London, London United Kingdom, 4 Dept. of Applied Physics, Kyung Hee University, Suwon Korea (the Republic of)

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12:45 PM - H1.11
Electronic Transport in Nanoglasses of Phase Change Memory.

Mark Simon 1 , Marco Nardone 1 , Victor Karpov 1 , Ilya Karpov 2
1 Department of Physics and Astronomy, The University of Toledo, Toledo, Ohio, United States, 2 , Intel Corporation, Santa Clara, California, United States

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H2: Structure I
Session Chairs
Martin Salinga
Tuesday PM, April 06, 2010
Room 2009 (Moscone West)

2:30 PM - **H2.1
Interface Engineering of Phase-change Memory Materials.

Stephen Elliott 1 , Jozsef Hegedus 1
1 Chemistry, University of Cambridge, Cambridge United Kingdom

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3:00 PM - **H2.2
Epitaxy of Phase Change Materials.

Wolfgang Braun 1
1 , Paul-Drude Institute for Solid State Electronics, Berlin Germany

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3:30 PM - H2.3
Crystallization of Ion Amorphized Ge2Sb2Te5 Thin Films in Presence of Cubic or Hexagonal Phase.

Riccardo De Bastiani 2 , Egidio Carria 1 2 , Maria Grazia Grimaldi 1 2 , Giuseppe Nicotra 3 , Corrado Spinella 3 , Emanuele Rimini 1 3
2 MATIS, CNR-INFM, Catania Italy, 1 Fisica ed Astronomia, Università di Catania, Catania Italy, 3 IMM, CNR-INFM, Catania Italy

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3:45 PM - **H2.4
What Makes Ge-Sb-Te Phase Change Alloys Fast and Stable.

Alexander Kolobov 1 3 , Paul Fons 1 3 , Milos Krbal 1 , Robert Simpson 1 , Junji Tominaga 1 , Stephen Elliott 2 , Jozsef Hegedus 2 , Tomoya Uruga 3
1 , AIST, Tsukuba Japan, 3 , SPring8, Sayo Japan, 2 , Cambridge University, Cambridge United Kingdom

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4:15 PM - H2:Struct
BREAK

4:30 PM - **H2.5
Phase Change in (GeTe)1-x(Sb2Te3)x and Lattice Instability in Average Five Valence Electron Family.

Keisuke Kobayashi 1
1 Beamline Station at SPring-8, Natioanal Institute for Materials Science, NIMS, Sayo, Hyogo, Japan

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5:00 PM - H2.6
Amorphization of Crystalline Phase Change Material by Ion Implantation.

Simone Raoux 4 , Guy Cohen 1 , Robert Shelby 2 , Huai-Yu Cheng 3 , Jean Jordan-Sweet 1
4 IBM/Macronix PCRAM Joint Project, IBM T. J. Watson Research Center, Yorktown Heights, New York, United States, 1 , IBM T. J. Watson Research Center, Yorktown Heights, New York, United States, 2 , IBM Almaden Research Center, San Jose, California, United States, 3 IBM/Macronix PCRAM Joint Project, Macronix Emerging Central Lab., Macronix International Co. Ltd., , Hsinchu Taiwan

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5:15 PM - H2.7
Phase Change Materials - A Model System Demonstrating the Role of Subcritical Nuclei in Phase Transformation.

Bong-Sub Lee 1 2 , Geoffrey Burr 3 , Robert Shelby 3 , Simone Raoux 4 , Charles Rettner 3 , Stephanie Bogle 1 2 , Kristof Darmawikarta 1 2 , Stephen Bishop 2 5 , John Abelson 1 2
1 Materials Science & Engineering, University of Illinois at Urbana-Champaign, Urbana, Illinois, United States, 2 Coordinated Science Laboratory, University of Illinois at Urbana-Champaign, Urbana, Illinois, United States, 3 , IBM Almaden Research Center, San Jose, California, United States, 4 , IBM T. J. Watson Research Center, Yorktown Heights, New York, United States, 5 Electrical and Computer Engineering, University of Illinois at Urbana-Champaign, Urbana, Illinois, United States

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5:30 PM - H2.8
Local Order and Crystallization of Laser Quenched and Ion Implanted Amorphous Ge1-xTex Thin Films.

Egidio Carria 1 2 , Riccardo De Bastiani 2 , Santo Gibilisco 1 2 , Antonio Massimiliano Mio 1 , Maria Miritello 1 2 , Agata Pennisi 1 , Corrado Bongiorno 3 , Maria Grazia Grimaldi 1 2 , Emanuele Rimini 1 3
1 Fisica ed Astronomia, Università di Catania, Catania Italy, 2 MATIS, CNR-INFM, Catania Italy, 3 IMM, CNR-INFM, Catania Italy

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5:45 PM - H2.9
Exploring Local Atomic Arrangements in Amorphous and Metastable Phase Change Materials With X-ray and Neutron Total Scattering.

Katharine Page 1 , Luc Daemen 1 , Thomas Proffen 1
1 Lujan Center, Los Alamos National Laboratory, Los Alamos, New Mexico, United States

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H3: Poster Session
Session Chairs
Tuesday PM, April 06, 2010
Exhibition Hall (Moscone West)

6:00 PM - H3.1
The Effect of Dopants on the Amorphous Structure of Ge2Sb2Te5.

Eunae Cho 1 , Jino Im 2 , Jisoon Ihm 2 , Dohyung Kim 3 , Hideki Horii 3 , Seungwu Han 1
1 Department of Materials Science and Engineering, Seoul National University, Seoul Korea (the Republic of), 2 Department of Physics and Astronomy, Seoul National University, Seoul Korea (the Republic of), 3 Process Development Team, Semiconductor R&D Center, Samsung Electronics, Hwasung Korea (the Republic of)

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6:00 PM - H3.10
Phase Change Switching Behaviors in Bi2Te3 Nanowire.

Nal Ae Han 1 , Jeong Do Yang 1 , Sung In Kim 1 , Kyung Hwa Yoo 1
1 Department of Physics, Yonsei University, Seoul Korea (the Republic of)

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6:00 PM - H3.11
An ab-initio XANES Study of Ge-Sb-Te Alloys.

Milos Krbal 1 , Alexander Kolobov 1 , Paul Fons 1 , Robert Simpson 1 , Steven Elliott 2 , Jozsef Hegedues 2 , Junji Tominaga 1
1 , Center for Applied Near-Field Optics Research (CanFor), National Institute of Advanced Industrial Science and Technology, 1-1-1, Higashi, Tsukuba 305-8562 Japan, 2 , Department of Chemistry, University of Cambridge, Cambridge CB2 1EW United Kingdom

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6:00 PM - H3.12
First-principles Investigation on the InSbTe Phase-change Alloys.

Naihua Miao 1 , Baisheng Sa 1 , Jian Zhou 1 , Zhimei Sun 1
1 Department of materials science and engineering, Xiamen University, Xiamen China

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6:00 PM - H3.13
Comparative Simulations and Analysis of Amorphization Current in Phase Change Memory Applied to Pillar and GST Confined Type Cells.

Olga Cueto 1 , Carine Jahan 1 , Veronique Sousa 1 , Jean-Francois Nodin 1 , Salim Syoud 1 , Luca Perniola 1 , Andrea Fantini 1 , Alain Toffoli 1 , Barbara De Salvo 1 , Fabien Boulanger 1
1 Nanotech Department, CEA-LETI MINATEC, Grenoble France

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6:00 PM - H3.14
Microstructural Analysis Upon Annealing Temperature in In-Sb-Te Thin Films Deposited by RF Magnetron Sputtering.

Chung Soo Kim 1 , Eun Tae Kim 1 , Jeong Yong Lee 1
1 Materials Science and Engineering, KAIST, Daejeon Korea (the Republic of)

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6:00 PM - H3.15
Defects of Amorphous and Crystalline GeSbTe Materials and Electrical Non-volatile Memories.

Bolong Huang 1 , John Robertson 1
1 Engineering, Cambridge University, Cambridge United Kingdom

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6:00 PM - H3.16
The Effect of Ge Addition on the Operation Characteristics of a Phase-change Memory(PCM) Device Using Ge-doped SbTe.

Young-wook Park 1 2 , Hyun Seok Lee 2 , Hyung Woo Ahn 2 , Zhe Wu 2 3 , Suyoun Lee 2 , Jeung-hyun Jeong 2 , Doo Seok Jeong 2 , Kyung-woo Yi 1 , Byung-ki Cheong 2
1 Department of material science and engineering, Seoul National University, Seoul Korea (the Republic of), 2 Film Materials Research Center, Korea Institute of Science and Technology, Seoul Korea (the Republic of), 3 Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology, Deajeon Korea (the Republic of)

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6:00 PM - H3.17
Analysis on Mechanism of Structural Relaxation in Amorphous Ge2Sb2Te5 Doped With Bi and N Using Thermomechanical Measurement.

Ju-Young Cho 1 , Tae-Youl Yang 1 , Young-Chang Joo 1
1 , Seoul National University, Seoul Korea (the Republic of)

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6:00 PM - H3.18
Unipolar Switching in Pt/GeSexTe1-x/Pt.

Doo Seok Jeong 1 , Seo Hee Son 1 2 , Suyoun Lee 1 , Byung-ki Cheong 1
1 Thin Film Materials Research Center, Korea Institute of Science and Technology, Seoul Korea (the Republic of), 2 Nanomaterials Science and Engineering Major, University of Science and Technology, Daejeon Korea (the Republic of)

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6:00 PM - H3.19
Electrical Properties of Phase-transformed Amorphous and Novel High Pressure Polycrystalline Silicon Formed by Nanoindentation.

Simon Ruffell 1 , Kallista Sears 1 , Jodie Bradby 1 , Jim Williams 1 , Andrew Knights 2
1 Electronic Materials Engineering, Australian National University, Canberra, Australian Capital Territory, Australia, 2 Department of Engineering Physics, McMaster University, Hamilton, Ontario, Canada

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6:00 PM - H3.2
Studies of Ge-Sb-Te Phase Change Materials At and Above Melting Temperatures and Set to Reset Transition of Memory Devices.

Semyon Savransky 1 , Guy Wicker 1
1 , The TRIZ Experts, Newark, California, United States

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6:00 PM - H3.20
In-situ Raman Scattering Spectroscopy for Super Resolution Effect.

Masashi Kuwahara 1 , Takayuki Shima 1 , Paul Fons 1 , Junji Tominaga 1
1 CAN-FOR, AIST, Tsukuba, Ibaraki, Japan

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6:00 PM - H3.22
Study of N-doped GeSb Phase Change Material for PCRAM Applications.

Audrey Bastard 1 3 , Sandrine Lhostis 1 5 , Pierre-Eugene Coulon 2 , Caroline Bonafos 2 , Andrea Fantini 5 , Luca Perniola 5 , Sebastien Loubriat 4 , Anne Roule 4 , Emmanuel Gourvest 1 6 , Edrisse Arbaoui 1 , Alain Fargeix 3 , Marilyn Armand 3 , Berangere Hyot 3 , Frederic Fillot 4 , Raluca Tiron 5 , Nevine Rochat 4 , Sylvain Maitrejean 5 , Veronique Sousa 5
1 , ST Microelectronics, Crolles France, 3 DOPT, CEA LETI, Grenoble France, 5 D2NT, CEA LETI, Grenoble France, 2 , CEMES, Toulouse France, 4 DPTS, CEA LETI, Grenoble France, 6 LTM, CNRS/UJF/INPG, Grenoble France

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6:00 PM - H3.23
Activated Pulsed Metalorganic Chemical Vapor Deposition of Ge2Sb2Te5 Thin Films Using Alkyl Precursors.

Denis Reso 1 , Mindaugas Silinskas 1 , Bodo Kalkofen 1 , Edmund Burte 1
1 Micro and Sensor Systems, Otto-von-Guericke-University , Magdeburg Germany

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6:00 PM - H3.24
An Optical Study of GeTe-Sb2Te3 Meta-materials.

Robert Simpson 1 , Paul Fons 1 , Alexander Kolobov 1 , Toshio Fukaya 1 , Reiko Kondou 1 , Takashi Yagi 2 , Milos Krbal 1 , Junji Tominaga 1
1 CAN-FOR, AIST, Tsukuba, Ibaraki, Japan, 2 National Metrology Institute of Japan, AIST, Tsukuba, Ibaraki, Japan

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6:00 PM - H3.25
Atomic Structures of the As-deposited Ge2Sb2Te5 Amorphous Films.

Xiaodong Han 1 , Shengbai Zhang 2
1 , Beijing University of Technology, Beijing China, 2 Applied Physics, Rensselaer Polytechnic Institute, Troy, New York, United States

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6:00 PM - H3.26
Atomic Layer Deposition of (GeTe2)x(Sb2Te3)y Films Using Novel Precursors for Phase Change Memory.

Taeyong Eom 1 , Seol Choi 1 , Byung Joon Choi 1 , Sangho Rha 1 , Woongkyu Lee 1 , Cheol Seong Hwang 1 , Moo Seong Kim 2
1 Material science and engineering, Seoul National University, Seoul Korea (the Republic of), 2 , Air products and chemicals korea, Seoul Korea (the Republic of)

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6:00 PM - H3.27
Effects of Silicon Doping on the Microstructures, Crystallization, and Physical Properties of GeSb9 Films.

Chun-Fan Liu 1 , Yu-Hsun Perng 1 , Chen-Wei Lee 1 , Lih-Hsin Chou 1
1 Dept. Mat. Sci. Eng., National Tsing Hua University, Hsinchu Taiwan

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6:00 PM - H3.28
Interface Diffusion in Ge2Sb2Te5 Films With TiN and TiW Electrodes.

Yu-Hsun Perng 1 , Lih-Hsin Chou 1
1 Dept. Mat. Sci. Eng., National Tsing Hua University, Hsinchu Taiwan

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6:00 PM - H3.29
Binary Phase-change Nanowire: Improving Energy Efficiency With Material Scaling.

Bhaskar Nagabhirava 1 , Benjamin Briggs 1 , Bin Yu 1
1 CNSE, SUNY-Albany, Albany, New York, United States

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6:00 PM - H3.3
Effect of Nitrogen Addition on Electrical Properties, Microstructures and Crystallization Incubation Time of Ge1Sb4Te7 Phase Change Material.

Hyung Keun Kim 1 , Jae Sung Roh 2 , Doo Jin Choi 1
1 Department of Material Science and engineering, Yonsei University, Seoul Korea (the Republic of), 2 Memory R&D Division, Hynix Semiconductors Inc., Icheon Korea (the Republic of)

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6:00 PM - H3.30
Conductive Oxide Interlayer between Phase Change Material and Bottom Electrode in PRAM.

Hyun-Goo Jun 1 , Dongbok Lee 1 , Byung-ki Cheong 2 , Ki-Bum Kim 1
1 Materials Science & Engineering, Seoul National University, Seoul Korea (the Republic of), 2 Thin Film Materials Research Center, Korea Institute of Science and Technology, Seoul Korea (the Republic of)

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6:00 PM - H3.31
Chemical Vapor Deposition of Ge2Sb2Te5 Thin Film for Phase Change Memory.

Seiti Hamada 1 , Takafumi Horiike 1 , Masato Ishikawa 1 2 3 , Hideaki Machida 2 3 , Atsushi Ogura 1 , Yoshio Ohshita 4 , Takayuki Ohba 3
1 , Meiji university, Kawasaki Japan, 2 , Gas-phase Growth Ltd., Koganei-shi Japan, 3 , The University of Tokyo, Tokyo Japan, 4 , Toyota Technological Institute, Nagoya Japan

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6:00 PM - H3.32
Crystallization Dynamic of as Deposited and Ion Implanted GeTe Thin Films by Optical Microscopy and Time Resolved Reflectivity Measurements.

Antonio Mio 1 2 , Egidio Carria 1 3 , Riccardo De Bastiani 3 , Maria Miritello 3 1 , Giuseppe D'Arrigo 2 , Maria Grazia Grimaldi 1 3 , Emanuele Rimini 1 2
1 Dipartimento di Fisica e Astronomia, Università di Catania, Catania Italy, 2 IMM, CNR-INFM, Catania Italy, 3 MATIS, CNR-INFM, Catania Italy

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6:00 PM - H3.33
Structural Transitions in the Ge2Sb2Te5 Phase Change Memory Alloy Under Compression.

Ravhi Kumar 1 , Matthew Jacobsen 1 , Andrew Cornelius 1
1 Physics, University of Nevada Las Vegas, Las Vegas, Nevada, United States

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6:00 PM - H3.34
Ab initio Calculations of Crystalline and Amorphous In2Se3 Compounds for Chalcogenide Phase Change Memory.

Renyu Chen 1 , Scott Dunham 1
1 Electrical Engineering, University of Washington, Seattle, Washington, United States

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6:00 PM - H3.35
Nuclei in Phase Change Materials: The Effects of Composition, Processing Conditions, and Interfaces.

Kristof Darmawikarta 1 2 , Bong-Sub Lee 1 2 , Simone Raoux 3 , Robert Shelby 4 , Charles Rettner 4 , Stephen Bishop 2 5 , John Abelson 1 2
1 Materials Science and Engineering, University of Illinois at Urbana-Champaign, Urbana, Illinois, United States, 2 Coordinated Science Laboratory, University of Illinois at Urbana-Champaign, Urbana, Illinois, United States, 3 , IBM T. J. Watson Research Center, Yorktown Heights, New York, United States, 4 , IBM Almaden Research Center, San Jose, California, United States, 5 Electrical & Computer Engineering, University of Illinois at Urbana-Champaign, Urbana, Illinois, United States

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6:00 PM - H3.4
Characterizations of AgInSbTe and Its Nanocomposite Thin Films for Phase-change Memory Applications.

Yu-Jen Huang 1 , Tsung-Eong Hsieh 1
1 Materials Science and Engineering, National Chiao Tung University, Hsinchu Taiwan

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6:00 PM - H3.5
Ce Doped-GeSbTe Thin Films Applied to Phase-change Random Access Memory Devices.

Yu-Jen Huang 1 , Tsung-Eong Hsieh 1
1 Materials Science and Engineering, National Chiao Tung University, Hsinchu Taiwan

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6:00 PM - H3.6
Crystallization Dynamics in Nanoglasses of Phase Change Memory.

Marco Nardone 1 , Mark Simon 1 , Victor Karpov 1 , Ilya Karpov 2
1 Department of Physics and Astronomy, The University of Toledo, Toledo, Ohio, United States, 2 , Intel Corporation, Santa Clara, California, United States

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6:00 PM - H3.7
Theory of Field Dependent Crystal Nucleation in Glasses.

Mark Simon 1 , Victor Karpov 1
1 Department of Physics and Astronomy, The University of Toledo, Toledo, Ohio, United States

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6:00 PM - H3.8
Growth and Crystallization Behavior of Ge Doped SbxTey Thin Films Deposited by a Plasma-enhanced CVD.

Seol Choi 1 , Byung Joon Choi 1 , Taeyong Eom 1 , Jae Hyuck Jang 1 , Woongkyu Lee 1 , Cheol Seong Hwang 1
1 , Seoul National University, Seoul Korea (the Republic of)

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6:00 PM - H3.9
Crystallization Properties of Ge-Sb-Te Phase Change Materials Studied by Time-resolved X-ray Diffraction and Static Laser Tester.

Becky Munoz 1 , Simone Raoux 2 , Jean Jordan-Sweet 3 , Darryl Butt 1
1 , Boise State University, Boise, Idaho, United States, 2 , IBM/Macronix PCRAM Joint Project, Yorktown Heights, New York, United States, 3 , IBM T. J. Watson Research Center, Yorktown Heights, New York, United States

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2010-04-07   Show All Abstracts

Symposium Organizers

Paul Fons National Institute for Advanced Industrial Science and Technology
Kris Campbell Boise State University
Byung-ki Cheong Korea Institute of Science and Technology
Simone Raoux IBM T. J. Watson Research Center
Matthias Wuttig I. Physikalisches Institut der RWTH Aachen
H4: Experiment I
Session Chairs
Bong-Sub Lee
Wednesday AM, April 07, 2010
Room 2009 (Moscone West)

9:00 AM - **H4.1
What Are We Going To Do For The New Applications of Future PRAM?

Dae-Hwan Kang 1
1 , Samsung Electronics Co. Ltd., Yongin-city, Gyunggi-do Korea (the Republic of)

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9:30 AM - **H4.2
Development Orientations for Phase-change Memory.

Enrico Varesi 1
1 R&D - Technology Development, Numonyx, Agrate Brianza, Milan, Italy

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10:00 AM - H4.3
Controlling Charge Transport in Phase Change Materials.

Theo Siegrist 2 1 , Michael Woda 1 , Stephan Kremers 1 , Peter Jost 1 , Philipp Merkelbach 1 , Pascal Rausch 1 , Matthias Wuttig 1
2 Chemical and Biomedical Engineering, Florida State University, Tallahassee, Florida, United States, 1 Institute of Physics (IA), RWTH Aachen, Aachen Germany

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10:15 AM - H4.4
Enhanced Thermal Efficiency of Ge2Sb2Te5 Phase Change Films Using the Microstructure Modification.

Dongbok Lee 1 , Ho-ki Lyeo 2 , Hyun-Seok Lee 3 , Hyun-Goo Jun 1 , Byung-ki Cheong 3 , Ki-Bum Kim 1
1 Materials Science & Engineering, Seoul National University, Seoul Korea (the Republic of), 2 , Korea Research Institute of Standards and Science, Daejeon Korea (the Republic of), 3 Thin Film Materials Research Center, Korea Institute of Science and Technology, Seoul Korea (the Republic of)

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10:30 AM - H4:Exper
BREAK

11:00 AM - **H4.5
Synthesis and Electrical Characterization of Amorphous GeTe Nanoparticles.

Marissa Caldwell 1 , Simone Raoux 2 , Robert Wang 3 , Delia Milliron 3 , H.-S. Philip Wong 4
1 Chemistry, Stanford University, Stanford, California, United States, 2 , IBM Watson Research Center, Yorktown, New York, United States, 3 The Molecular Foundry, Lawrence Berkeley National Lab, Berkeley, California, United States, 4 Electrical Engineering, Stanford University, Stanford, California, United States

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11:30 AM - **H4.6
Electrical Switching Behavior of Phase Change Memory Devices.

Martin Salinga 1
1 I. Institute of Physics, RWTH Aachen University, Aachen Germany

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12:00 PM - H4.7
Perspectives of Nanostructured Phase Change Materials for High Speed Non-volatile Memory.

Desmond Loke 1 , Weijie Wang 2 , Luping Shi 2 , Rong Zhao 2 , Hongxin Yang 2 , Kian Guan Lim 2 , Lung Tat Ng 2 , Hock Koon Lee 2 , Yee-Chia Yeo 3 , Tow Chong Chong 2 3
1 NUS Graduate School for Integrative Sciences and Engineering, National University of Singapore, Singapore Singapore, 2 , Data Storage Institute, Singapore Singapore, 3 Department of Electrical and Computer Engineering, National University of Singapore, Singapore Singapore

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12:15 PM - H4.8
Improved Temperature Dependence of Phase Change Memory Device Using Ge-doped SbTe.

Zhe Wu 1 2 , Youngwook Park 2 3 , Hyung-woo Ahn 2 , Suyoun Lee 2 , Jeung-hyun Jeong 2 , Dooseok Jeong 2 , Kwangsoo No 1 , Byung-ki Cheong 2
1 Material Sicience and Engineering, Korea Advanced Institute of Science and Technology, Daejeon Korea (the Republic of), 2 Thin Film Materials Research Center, Korea Institute of Science and Technology, Seoul Korea (the Republic of), 3 Material Science and Engineering, Seoul National University, Seoul Korea (the Republic of)

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12:30 PM - H4.9
In situ TEM Investigation of Electrically-driven Phase Change Behavior in Ge2Sb2Te5 Nanowire Devices.

Yeonwoong Jung 1 , Sung-Wook Nam 1 , Ritesh Agarwal 1
1 Department of Materials Science and Engineering, University of Pennsylvania, Philadelphia, Pennsylvania, United States

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12:45 PM - H4.10
Pressure-induced Changes in Phase Change Memory Alloys.

Milos Krbal 1 , Alexander Kolobov 1 , Julien Haines 2 , Paul Fons 1 , Claire Levelut 4 , Rozen Le Parc 4 , Michael Hanfland 3 , Junji Tominaga 1 , Annie Pradel 2 , Michel Ribes 2
1 , Center for Applied Near-Field Optics Research (CanFor),National Institute of Advanced Industrial Science and Technology, 1-1-1, Higashi, Tsukuba 305-8562 Japan, 2 , Institut Charles Gerhardt, UMR 5253 CNRS-UM2-ENSCM-UM1, PMDP/PMOF, Université Montpellier II, Place Eugène Bataillon, Montpellier Cedex 5 France, 4 , Laboratoire des Colloides, Verres et Nanomatériaux, Université Montpellier II, Place Eugène Bataillon, Montlpellier Cedex 5 France, 3 , European Synchrotron Radiation Facility (ESRF), 6 rue Jules Horowitz, Boîte Postale 220,Grenoble France

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H5: Experiment II
Session Chairs
Byong-ki Cheong
Wednesday PM, April 07, 2010
Room 2009 (Moscone West)

2:30 PM - **H5.1
Understanding Phase Change Memory Reliability and Scaling by Physical Models of the Amorphous Chalcogenide Phase.

Daniele Ielmini 1
1 Dipartimento di Elettronica e Informazione, Politecnico di Milano, Milano, MI, Italy

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3:00 PM - H5.2
Effect of Pressure on the Amorphous Structures of Ge2Sb2Te5 and Its Implications to the Mechanism of Resistance Drift.

Seungwu Han 2 , Jino Im 1 , Eunae Cho 2 , Dohyung Kim 3 , Hideki Horii 3 , Jisoon Ihm 1
2 Department of Materials Science and Engineering, Seoul National University, Seoul Korea (the Republic of), 1 Department of Physics and Astronomy, Seoul National University, Seoul Korea (the Republic of), 3 Process Development Team, Semiconductor R&D Center, Samsung Electronics, Hwasung Korea (the Republic of)

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3:15 PM - **H5.3
Extremely Low Temporal Drift in Phase Change Nanowire Memory Devices.

Ritesh Agarwal 1
1 Materials Science and Engineering, University of Pennsylvania, Philadelphia, Pennsylvania, United States

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3:45 PM - H5:Exper2
BREAK

4:15 PM - H5.4
A Study on the Temperature Dependence of the Threshold Switching Characteristics of Ge2Sb2Te5.

Suyoun Lee 1 , Doo Seok Jeong 1 , Jeung-hyun Jeong 1 , Zhe Wu 2 , Young-Wook Park 3 , Hyung-Woo Ahn 1 , Byung-ki Cheong 1
1 Materials Science and Tech. Division, Korea Institute of Science and Technology, Seoul Korea (the Republic of), 2 Dept. of Materials Science and Engineering, Korea Advanced Institute of Science and Technology, Daejeon Korea (the Republic of), 3 Dept. of Materials Science and Engineering, Seoul National University, Seoul Korea (the Republic of)

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4:30 PM - H5.5
Fermi-level Pinning Effect at the Interface Between Phase Change Materials and Metals.

Lina Wei-Wei Fang 1 , Rong Zhao 2 , Jisheng Pan 3 , Zheng Zhang 3 , Luping Shi 2 , Tow-Chong Chong 1 2 , Yee-Chia Yeo 1
1 , National University of Singapore, Singapore Singapore, 2 , Data Storage Institute, A*STAR , Singapore Singapore, 3 , Institute of Materials Research and Engineering, A*STAR , Singapore Singapore

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4:45 PM - H5.6
Electrical and Thermal Contact Resistance of the Phase-change Material Cycled by Micro-thermal Stage.

SangBum Kim 1 , Rakesh Jeyasingh 1 , John Reifenberg 2 , Jaeho Lee 2 , Mehdi Asheghi 2 , Kenneth Goodson 2 , H.-S. Philip Wong 1
1 Electrical Engineering, Stanford University, Stanford, California, United States, 2 Mechanical Engineering, Stanford University, Stanford, California, United States

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5:00 PM - H5.7
Study of Chalcogenide Materials Interfaces in a PCRAM Cell.

Sebastien Loubriat 1 , Frederic Fillot 1 , Patrice Gergaud 1 , Denise Muyard 1 , Emmanuel Gourvest 3 4 , Laurent Vandroux 1 , Anne Roule 1 , Marc Verdier 2 , Sylvain Maitrejean 1
1 Leti - DPTS - SIDE, CEA Grenoble, Grenoble France, 3 , ST Microelectronics, Crolles France, 4 , Microelectronics Technology Laboratory (LTM), Joseph Fourier University (UJF), CEA/LETI/D2NT/LTM , Grenoble France, 2 , SIMAP (INPG-UJF-CNRS), Grenoble France

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5:15 PM - H5.8
Crystallization Process of Ge1Cu2Te3 Phase Change Material.

Yuji Sutou 1 , Toshiya Kamada 1 , Yuta Saito 1 , Neishi Koji 1 , Junichi Koike 1
1 Department of Materials Science, Tohoku University, Sendai, Miyagi, Japan

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5:30 PM - **H5.9
A Sub-nanosecond Time-resolved Micro XAFS System for Optical Phase Change Materials.

Hitoshi Osawa 1 , Paul Fons 1 2 , A. Kolobov 1 2 , Toshio Fukaya 1 2 , Tomoya Uruga 1 , Hajime Tanida 1 , Naomi Kawamura 1 , Masafumi Takagaki 1 , Motohiro Suzuki 1 , Yasuko Terada 1 , Junji Tominaga 2
1 , Japan Synchrotron Radiation Institute, Hyogo-ken Japan, 2 Center for Applied Near-Field Optics Research, National Institute of Advanced Industrial Science and Technology, Tsukuba Ibaraki Japan

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2010-04-08   Show All Abstracts

Symposium Organizers

Paul Fons National Institute for Advanced Industrial Science and Technology
Kris Campbell Boise State University
Byung-ki Cheong Korea Institute of Science and Technology
Simone Raoux IBM T. J. Watson Research Center
Matthias Wuttig I. Physikalisches Institut der RWTH Aachen
H6: Applications I
Session Chairs
Bart Kooi
Thursday AM, April 08, 2010
Room 2009 (Moscone West)

9:00 AM - **H6.1
Minimum Voltage for Threshold Switching in Nanoscale Phase-change Memory.

Dong Yu 1 , Sarah Brittman 2 , Jin Lee 2 , Abram Falk 3 , Hongkun Park 2 3
1 Physics, UC Davis, Davis, California, United States, 2 Chemistry and Chemical Biology, Harvard University, Cambridge, Massachusetts, United States, 3 Physics, Harvard University, Cambridge, Massachusetts, United States

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9:30 AM - H6.2
Stress Limited Scaling of Ge2Sb2Te5.

Robert Simpson 1 , Milos Krbal 1 , Paul Fons 1 2 , Alexander Kolobov 1 2 , Junji Tominaga 1 , Tomoya Uruga 2 , Hajime Tanida 2
1 CAN-FOR, AIST, Tsukuba, IBARAKI, Japan, 2 , Japan Synchrotron Radiation Research Institute (JASRI), Mikazuki, Hyogo, Japan

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9:45 AM - H6.3
GeTe-filled Carbon Nanotubes for Data Storage Applications.

Cristina Giusca 1 , Vlad Stolojan 1 , Jeremy Sloan 2 , Hidetsugu Shiozawa 1 , S. Ravi Silva 1
1 Advanced Technology Institute, University of Surrey, Guildford United Kingdom, 2 Department of Physics, University of Warwick, Coventry United Kingdom

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10:00 AM - **H6.4
Bridging the Gap Between Phase Change Material Properties and Phase Change Memory Device Characteristics.

Matthew Breitwisch 1
1 , IBM/Macronix PCRAM Joint Project, T. J. Watson Research Center, Yorktown Heights, New York, United States

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10:30 AM - **H6.5
The Crystallization Behavior of Ge1SbxTe1 Phase-change Materials.

Huai-Yu Cheng 1 2 , Simone Raoux 1 3 , Matthias Wuttig 4 , Becky Munoz 5 , Jean L. Jordan-Sweet 3
1 , IBM/Macronix PCRAM Joint Project, Yorktown Heights, New York, United States, 2 Macronix Emerging Central Lab, Macronix International Co. Ltd., Hsinchu Taiwan, 3 , IBM T. J. Watson Research Center, Yorktown Heights, New York, United States, 4 I. Physikalisches Institut (IA), RWTH Aachen University, Aachen Germany, 5 Material Science and Engineering Department, Boise State University, Boise, Idaho, United States

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11:00 AM - H6:App1
BREAK

11:15 AM - H6.6
Spectroscopic Ellipsometry and Raman Spectroscopy of Ge-doped SbTe Thin Films.

Jun-Woo Park 1 , Hosun Lee 1 , Tae Dong Kang 2 , Andrei Sirenko 2 , Hyun Seok Lee 3 , Suyoun Lee 3 , Jeung-hyun Jeong 3 , Byung-ki Cheong 3
1 Dept. of Applied Physics, Kyung Hee University, Yong-In, Gyeonggi-do, Korea (the Republic of), 2 Dept. of Physics, New Jersey Institute of Technology, Newark, New Jersey, United States, 3 Thin Film Materials Research Center, Korea Institute of Science and Technology, Seoul Korea (the Republic of)

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11:30 AM - H6.7
Effect of Heat Treatment on Electrical Resistance Change and Crystallization Process of Si-Te Thin Films.

Yuta Saito 1 , Yuji Sutou 1 , Junichi Koike 1
1 Department of Materials Science, Tohoku University, Sendai Japan

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11:45 AM - H6.8
Effects of Cu Doping on the Crystallization Properties of Phase Change Materials GeTe and Sb2Te3.

Minghua Li 1 , Rong Zhao 1 , Eng Guan Yeo 1 , Luping Shi 1 , Tow Chong Chong 1
1 , Data Storage Institute, Singapore Singapore

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12:00 PM - **H6.9
Atomic Layer Deposition of Phase Change Material Thin Films.

Mikko Ritala 1 , Viljami Pore 1 , Timo Hatanpaa 1 , Tiina Sarnet 1 , Markku Leskela 1 , Alejandro Schrott 2 , Simone Raoux 2
1 Chemistry, University of Helsinki, Helsinki Finland, 2 , IBM T. J. Watson Research Center, Yorktown Heights, New York, United States

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12:30 PM - H6.10
Influence of Bottom Contact Material on the Selective Chemical Vapor Deposition of Crystalline GeSbTe Alloys.

Alejandro Schrott 1 , Chieh-Fang Chen 2 , Eric Joseph 1 , Matthew Breitwisch 1 , Ravi Dasaka 1 , Roger Cheek 1 , Chung Lam 1
1 , IBM Research, T.J. Watson Res. Ctr., Yorktown Heights, New York, United States, 2 Macronix Emerging Central Laboratory, Macronix International Co., Ltd., Hsinchu Taiwan

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12:45 PM - H6.11
MOCVD Growth of Ge-Sb-Te Nanowires by the VLS Process.

Massimo Longo 1 , Claudia Wiemer 1 , Olivier Salicio 1 , Marco Fanciulli 1 2 , Enrico Varesi 3 , Paolo Targa 3
1 Laboratorio Nazionale MDM, CNR-INFM, Agrate Brianza, Milano, Italy, 2 Dipartimento di Scienza dei Materiali, University of Milano Bicocca, Milano Italy, 3 , Numonyx, Agrate Brianza , Milano, Italy

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H7/G14: Joint Session: Applications II
Session Chairs
Simone Raoux
Thursday PM, April 08, 2010
Room 2011 (Moscone West)

2:45 PM - **H7.1/G14.1
Phase Change Based Memory Devices: Characteristic Behaviors, Physical Models and Key Materials Properties.

Ilya Karpov 1 , DerChang Kau 1 , Gianpaolo Spadini 1 , David Kencke 1
1 , Intel Corporation, Santa Clara, California, United States

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3:15 PM - H7.2/G14.2
PCRAM Performances Improvement With Nitrogen Doped GeTe Material for Embedded Applications.

Emmanuel Gourvest 1 2 , Christophe Vallee 2 , Frederic Fillot 3 , Herve Roussel 4 , Luca Perniola 3 , Andrea Fantini 3 , Jean-Claude Bastien 3 , Audrey Bastard 1 3 , Sebastien Loubriat 3 , Anne Roule 3 , Sandrine Lhostis 1 , Sylvain Maitrejean 3
1 , STMicroelectronics, Grenoble France, 2 LTM, CNRS/UJF/INPG, Grenoble France, 3 LETI-Minatec, CEA, Grenoble France, 4 LMGP, CNRS/INPG, Grenoble France

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3:30 PM - H7.3/G14.3
Electromigration in GeSbTe-based Chalcogenide Materials Under Pulsed DC for Set-stuck Failure.

Tae-Youl Yang 1 , Ju-Young Cho 1 , Young-Chang Joo 1
1 Department of materials science and engineering, Seoul National University, Seoul Korea (the Republic of)

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3:45 PM - H7.4/G14.4
Structural and Electrical Switching Dynamics in Phase-change Random Access Memory.

Jasper L. Oosthoek 1 2 , Frans Voogt 3 , Bart Kooi 1 2
1 Zernike Institute for Advanced Materials, University of Groningen, Groningen Netherlands, 2 ,