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Spring 2011 Logo2011 MRS Spring Meeting & Exhibit

April 25-29, 2011 | San Francisco
Meeting Chairs: Ping Chen, Chang Beom-Eom, Samuel S. Mao, Ryan O'Hayre

Symposium EE : Semiconductor Nanowires---From Fundamentals to Applications

2011-04-26   Show All Abstracts

Symposium Organizers

Volker Schmidt Max Planck Institute of Microstructure Physics
LincolnJ. Lauhon Northwestern University
Takashi Fukui Hokkaido University
GeorgeT. Wang Sandia National Laboratories
Mikael Bjoerk IBM Research GmbH

Symposium Support

AIXTRON SE
FEI Company
IBM Research Zurich
JEOL USA
Veeco
EE1: Group IV Nanowires I
Session Chairs
Lincoln Lauhon
Tuesday PM, April 26, 2011
Room 3001 (Moscone West)

9:00 AM - **EE1.1
Nucleation and Early-stage Vapor-liquid-solid Growth of Epitaxial Group IV Nanowires.

Paul McIntyre 1
1 , Stanford University, Stanford, California, United States

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9:30 AM - EE1.2
Growth of Ge Nanowires from Compositionally Controlled Au-Cu Alloy Nanoparticle Catalysts.

Justin Connell 1 , Zakaria Al Balushi 1 , Kwonnam Sohn 1 , Jiaxing Huang 1 , Lincoln Lauhon 1
1 Materials Science and Engineering, Northwestern University, Evanston, Illinois, United States

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9:45 AM - EE1.3
In Situ Stability Study of Initially Coherent Ge-core/SiGe-shell Nanowires.

Shu Hu 1 , Irene Goldthorpe 1 , Shruti Thombare 1 , Marika Gunji 1 , Ann Marshall 2 , Paul McIntyre 1 2
1 Materials Science and Engineering, Stanford University, Stanford, California, United States, 2 , Geballe Laboratory for Advanced Materials, Stanford, California, United States

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10:00 AM - EE1.4
In-situ TEM Observation of the Growth of Si Nanowires by Catalysts of Ag-Au Alloy.

Yi-Chia Chou 1 2 , Cheng-Yen Wen 1 2 , Mark Reuter 2 , Eric Stach 1 3 , Frances Ross 2
1 Materials Science and Engineering, Purdue University , West Lafayette, Indiana, United States, 2 , IBM T. J. Watson Center, Yorktown Heights, New York, United States, 3 , Brookhaven National Lab, Upton, New York, United States

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10:15 AM - EE1.5
Novel In Situ Catalyst Alloying Enables Abrupt Interfaces without Kinking in VLS Growth of Si-Ge Axial Nanowire Heterostructures.

Daniel Perea 1 , Nan Li 1 , Amit Misra 1 , S. Tom Picraux 1
1 Center for Integrated Nanotechnologies, Los Alamos National Laboratory, Los Alamos, New Mexico, United States

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10:30 AM - EE1.6
Size Effects in Ni Catalyzed Germanium Nanowire Growth.

Shruti Thombare 1 , Ann Marshall 2 , Paul McIntyre 1 2
1 Materials Science Engineering, Stanford University, Stanford, California, United States, 2 Geballe Laboratory for Advanced Materials, Stanford University, Stanford, California, United States

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10:45 AM - EE1.7
An in-situ Chemical Study of the Influence of Hydrogen on Si Nanowire Crystal Orientation, Catalyst Diffusion, and Faceting.

Naechul Shin 1 , Michael Filler 1
1 School of Chemical & Biomolecular Engineering, Georgia Institute of Technology, Atlanta, Georgia, United States

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11:00 AM - EE1:Group IV Nan
BREAK

11:30 AM - **EE1.8
New Directions for Wire Arrays in High Efficiency Photovoltaics and Solar Fuel Synthesis.

Harry Atwater 1 , Dan Turner-Evans 1 , Morgan Putnam 3 , Michael Kelzenberg 1 , Nathan Lewis 2 , Emily Warren 3 , Chris Chen 4 , Adele Tamboli 1
1 Applied Physics, California Institute of Technology, Pasadena, California, United States, 3 Chemical Engineering, California Institute of Technology, Pasadena, California, United States, 2 Chemistry, California Institute of Technology, Pasadena, California, United States, 4 Materials Science, California Institute of Technology, Pasadena, California, United States

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12:00 PM - EE1.9
Wafer-scale Growth of Silicon Microwire Arrays.

Adele Tamboli 1 , Christopher Chen 1 , Daniel Turner-Evans 1 , Michael Kelzenberg 1 , Harry Atwater 1
1 Applied Physics, California Institute of Technology, Pasadena, California, United States

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12:15 PM - EE1.10
Optical Absorption in Si Heterojunction Wire Arrays.

Andrey Poletayev 1 3 , Hal Emmer 2 3 , Michael Deceglie 2 3 , Daniel Turner-Evans 2 3 , Michael Kelzenberg 2 3 , Morgan Putnam 2 3 , Nathan Lewis 1 3 , Harry Atwater 2 3
1 Chemistry, California Institute of Technology, Pasadena, California, United States, 3 Kavli Nanoscience Institute, California Institute of Technology, Pasadena, California, United States, 2 Applied Physics, California Institute of Technology, Pasadena, California, United States

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12:30 PM - EE1.11
Radial Junction Silicon Microwire Photocathodes.

Emily Warren 1 , Shannon Boettcher 1 2 , Michael Walter 1 , Harry Atwater 2 , Nathan Lewis 1
1 Division of Chemistry and Chemical Engineering, Caltech, Pasadena, California, United States, 2 Divison of Engineering and Applied Science, California Institute of Technology, Pasadena, California, United States

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12:45 PM - EE1.12
Measurement of Minority Carrier Diffusion Lengths in VLS-grown p-n Junction Silicon Nanowires.

Aditya Mohite 1 2 , Daniel Perea 1 , Sanjeev Singh 1 2 , Shadi Dayeh 1 , Samuel Picraux 1 , Han Htoon 1 2
1 Center for Integrated Nanotechnologies, Los Alamos National Lab, Los Alamos, New Mexico, United States, 2 Chemistry Division, Los Alamos National Lab, Los Alamos, New Mexico, United States

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2011-04-27   Show All Abstracts

Symposium Organizers

Volker Schmidt Max Planck Institute of Microstructure Physics
LincolnJ. Lauhon Northwestern University
Takashi Fukui Hokkaido University
GeorgeT. Wang Sandia National Laboratories
Mikael Bjoerk IBM Research GmbH

Symposium Support

AIXTRON SE
FEI Company
IBM Research Zurich
JEOL USA
Veeco
EE6: Poster Session: III-V and II-IV (Non-Oxide) Nanowires
Session Chairs
Wednesday PM, April 27, 2011
Salons 7-9 (Marriott)

1:00 AM - EE6: Poster
EE6.38 Transferred to EE11.8

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EE5: III-V (Non-Nitride) Nanowires I
Session Chairs
Kirsten Moseland
Wednesday PM, April 27, 2011
Room 3001 (Moscone West)

2:30 PM - **EE5.1
Periodic Nanowire Structures.

Erik Bakkers 1 2 3 , Rienk Algra 1 4 , Marcel Verheijen 1 3 , Lou-Fe Feiner 1 , Elias Vlieg 4 , Willem van Enckevort 4 , Moira Hocevar 2
1 , TU Eindhoven, Eindhoven Netherlands, 2 , TU Delft, Delft Netherlands, 3 , Philips Research, Eindhoven Netherlands, 4 , Radboud University, Nijmegen Netherlands

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3:00 PM - EE5.2
Combinatorial Approaches to Understanding Polytypism in III-V Nanowires.

Jonas Johansson 1 , Jessica Bolinsson 1 , Martin Ek 2 , Kimberly Dick 1 2
1 Solid State Physics and the Nanometer Structure Consortium, Lund University, Lund Sweden, 2 Polymer & Materials Chemistry, Lund University, Lund Sweden

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3:15 PM - EE5.3
Unit Cell Deformations of Hexagonal Polytypes in III-V Semiconductor Nanowires.

Dominik Kriegner 1 , Christian Panse 2 , Bernhard Mandl 1 3 , Kimberly Dick 3 4 , Mario Keplinger 1 , Johan Persson 5 , Philippe Caroff 6 , Daniele Ercolani 7 , Lucia Sorba 7 , Friedhelm Bechstedt 2 , Julian Stangl 1 , Guenther Bauer 1
1 Institute of Semiconductor and Solid State Physics, Johannes Kepler University Linz, Linz Austria, 2 Institut fuer Festkoerpertheorie und -optik, Friedrich-Schiller-Universität Jena, Jena Germany, 3 Solid State Physics, Lund University, Lund Sweden, 4 Polymer & Materials Chemistry, Lund University, Lund Sweden, 5 Center for Electron Nanoscopy, Technical University Denmark, Kgs Lyngby Denmark, 6 IEMN, UMR CNRS 8520, Villeneuve d'Ascq France, 7 NEST, Scuola Normale Superiore and CNR-INFM, Pisa Italy

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3:30 PM - EE5.4
Growth and Characterization of InSb Nanowires by Chemical Beam Epitaxy.

Alexander Vogel 1 , Johannes de Boor 1 , Joerg Wittemann 1 , Samuel Mensah 1 , Peter Werner 1 , Volker Schmidt 1
1 , Max Planck Institute of Microstructure Physics, Halle (Saale) Germany

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3:45 PM - EE5.5
Growth of Antimony-containing Heterostructure Nanowires by Molecular Beam Epitaxy: Crystal Phase Control, Surfaces and Interfaces.

Philippe Caroff 1 , Tao Xu 2 , Kimberly Dick 3 5 , Sébastien Plissard 1 4 , Thanh Nguyen 2 , Bruno Grandidier 2 , Xavier Wallart 1
1 , Institut d’Electronique, de Microélectronique et de Nanotechnologie (IEMN), UMR CNRS 8520, Villeneuve d'Ascq France, 2 ISEN, Institut d’Electronique, de Microélectronique et de Nanotechnologie (IEMN), UMR CNRS 8520, Villeneuve d'Ascq France, 3 Solid State Physics / the Nanometer Structure Consortium, Lund University, Lund Sweden, 5 Polymer & Materials Chemistry, Lund University, Lund Sweden, 4 Department of Applied Physics, Photonics and Semiconductor Nanophysics, Eindhoven University of Technology, Eindhoven Netherlands

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4:00 PM - EE5: III-V
BREAK

4:30 PM - **EE5.6
III-V Semiconductor Nanowires on Si: Selective Area MOVPE and Their Device Applications.

Katsuhiro Tomioka 1 2 , Junichi Motohisa 1 , Shinjiroh Hara 1 , Kenji Hiruma 1 , Takashi Fukui 1
1 Graduate School of Information Science and Technology, and Research Center for Integrated Quantum Electronics (RCIQE), Hokkaido University, Sapporo Japan, 2 PRESTO, Japan Science and Technology Agency (JST), Saitama Japan

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5:00 PM - EE5.7
Control of Nanowire Morphology by Choice of Precursor Chemistry.

Omid Salehzadeh 1 , Simon Watkins 1
1 Physics, Simon Fraser University, Burnaby, British Columbia, Canada

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5:15 PM - EE5.8
Measuring Surface Energies and Chemical Potential during Nanowire Growth.

Marcel Verheijen 1 4 , Rienk Algra 3 4 5 , Lou-Fe Feiner 4 2 , George Immink 4 , Willem van Enckevort 5 , Elias Vlieg 5 , Erik Bakkers 2 4
1 Plasma & Materials Processing, Eindhoven University of Technology, Eindhoven Netherlands, 4 , Philips Research Laboratories, Eindhoven Netherlands, 3 , Materials Innovation Institute, Delft Netherlands, 5 Institue of Molecules and Materials, Radboud University, Nijmegen Netherlands, 2 Photonics and Semiconductor Nanophysics, Eindhoven University of Technology, Eindhoven Netherlands

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5:30 PM - EE5.9
The Role of In Droplets in the Spontaneous Formation of InAs Nanowires on Bare Si(111).

Emmanouil Dimakis 1 , Jonas Laehnemann 1 , Uwe Jahn 1 , Steffen Breuer 1 , Maria Hilse 1 , Lutz Geelhaar 1 , Henning Riechert 1
1 , Paul-Drude-Institut für Festkörperelektronik, Berlin Germany

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5:45 PM - EE5.10
Transient Supersaturation Effects of Au VLS Catalysts on the Growth of Low-dimensional Axial GaAs/GaP Heterostructure Nanowires for Optoelectronic Applications.

Jonathan Boulanger 1 2 , Ray LaPierre 1 2
1 Engineering Physics, McMaster University, Hamilton, Ontario, Canada, 2 Center for Emerging Device Technologies, McMaster University, Hamilton, Ontario, Canada

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EE6: Poster Session: III-V and II-IV (Non-Oxide) Nanowires
Session Chairs
Thursday AM, April 28, 2011
Salons 7-9 (Marriott)

9:00 PM - EE6.1
Microstructural Characterization of GaAs-AlxGa1-xAs Core-shell Nanowires Grown by Au-catalyst Assisted MOVPE.

Davide Altamura 2 1 4 , Ilio Miccoli 2 , Paola Prete 3 , Nicola Lovergine 2 , Leander Tapfer 1
2 Dip. Ingegneria dell'Innovazione, Università del Salento, Lecce Italy, 1 UTTMATB, ENEA, Brindisi Italy, 4 IC, CNR, Lecce Italy, 3 IMM, CNR, Lecce Italy

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9:00 PM - EE6.12
Binary Data Transmission Performance of Sub-20 nm Indium Antimonide Nanowires.

Ali Guvenc 1 , Miroslav Penchev 1 , Jiebin Zhong 2 , Cengiz Ozkan 2 3 , Mihrimah Ozkan 1
1 Electrical Engineering, University of California, Riverside, Riverside, California, United States, 2 Mechanical Engineering, University of California, Riverside, Riverside, California, United States, 3 Materials Science and Engineering , University of California, Riverside, Riverside, California, United States

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9:00 PM - EE6.13
Surface Electronic Properties of GaAs Nanowires for Solar Applications.

Olivier Demichel 1 2 , Martin Heiss 1 , Joel Bleuse 2 , Henri Mariette 2 , Anna Fontcuberta i Morral 1
1 , EPFL, Lausanne Switzerland, 2 , CEA-Grenoble, Grenoble France

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9:00 PM - EE6.14
P-doping Mechanism in Catalyst-free MBE Grown GaAs Nanowires.

Carlo Colombo 1 , Joseph Dufouleur 2 , Tonko Garma 2 , Bernt Ketterer 1 , Emanuele Uccelli 1 , Anna Fontcuberta i Morral 1
1 , EPFL, Lausanne Switzerland, 2 , TUM, Muenchen Germany

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9:00 PM - EE6.16
Negative Differential Resistance in Photocurrent in Core-shell Semiconductor Nanowires.

Guannan Chen 1 , Eric Gallo 1 , Paola Prete 2 , Nico Lovergine 3 , Jonathan Spanier 1
1 Materials Science & Engineering, Drexel University, Philadelphia, Pennsylvania, United States, 2 , Consiglio Nazionale delle Ricerche, Lecce Italy, 3 Department of Innovation Engineering, University of Salento, Lecce Italy

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9:00 PM - EE6.19
Microstructure Evolution and Development of Annealed Ni/Au Contacts to p-GaN Nanowires.

Andrew Herrero 1 , Paul Blanchard 1 , Devin Rourke 1 , Aric Sanders 1 , Matthew Brubaker 1 , Chris Dodson 1 , Norman Sanford 1 , Kristine Bertness 1
1 Optoelectronics Division, NIST, Boulder, Colorado, United States

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9:00 PM - EE6.2
Inner Composition, Defects and Morphology of AlGaAs Nanowires Grown by Au-catalyzed MOVPE.

Paola Prete 1 , Benjamin Buick 2 , Pasquale Paiano 3 , Eugen Speiser 2 , Dorin Geiger 4 , Daniel Wolf 4 , Nico Lovergine 3 , Wolfgang Richter 2
1 Institute of Microelectronics and Microsystems (IMM), CNR, Lecce Italy, 2 Dept. of Physics, University of Rome 'Tor Vergata', Rome Italy, 3 Dept. of Innovation Engineering, University of Salento, Lecce Italy, 4 Triebenberg Laboratory, Institute of Structure Physics, Technische Universität Dresden, Dresden Germany

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9:00 PM - EE6.20
Photoconductivity in Single AlN Nanowires by Subbandgap Excitation.

Ruei-San Chen 1 2 , Hsuan-Ming Huang 2 3 , Hsin-Yi Chen 3 4 , Li-Chyong Chen 4 , Kuei-Hsien Chen 2 4 , Ying-Jay Yang 3
1 Graduate Institute of Engineering, National Taiwan University of Science and Technology, Taipei Taiwan, 2 Institute of Atomic and Molecular Sciences, Academia Sinica, Taipei Taiwan, 3 Graduate Institute of Electronics Engineering, National Taiwan University, Taipei Taiwan, 4 Center for Condensed Matter Sciences, National Taiwan University, Taipei Taiwan

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9:00 PM - EE6.21
Axial Modulation of the Diameter within Individual GaN Nanowires.

Samuel Crawford 1 , Sung Keun Lim 1 , Silvija Gradecak 1
1 Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts, United States

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9:00 PM - EE6.22
Effect of AlN Buffer Layer and Nitrogen Plasma Conditions on the Growth of GaN Nanowires by Plasma Assisted Molecular Beam Epitaxy.

Matt Brubaker 1 3 , Albert Davydov 2 , Igor Levin 2 , Devin Rourke 1 , Kris Bertness 1
1 Optoelectronics Division, Precision Measurement Laboratory, National Institute of Standards and Technology, Boulder, Colorado, United States, 3 Department of Mechanical Engineering, University of Colorado at Boulder, Boulder, Colorado, United States, 2 Metallurgy Division, Material Measurement Laboratory, National Institute of Standards and Technology, Gaithersburg, Maryland, United States

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9:00 PM - EE6.23
Effect of Ti/Al Contact Alloying on GaN Nanowire Resistance.

Paul Blanchard 1 , Kris Bertness 1 , Todd Harvey 1 , Mary Rowe 1 , Aric Sanders 1 , Norman Sanford 1
1 , NIST, Boulder, Colorado, United States

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9:00 PM - EE6.25
V-L-S Growth of CdTe Nanowires on Mo Foil for Solar Cell Applications.

Benjamin Williams 1 , Ken Durose 1
1 Physics, Durham University, Durham United Kingdom

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9:00 PM - EE6.28
Features of Topological Transitions and Size Effects in the Strain Dependences of Thermopower and Resistance in Nanowires Based on Bi and Its Alloys.

Albina Nikolaeva 1 2 , Leonid Konopko 1 2 , Gheorghe Para 1 , Anna Tsurkan 1 , Oxana Botnary 1
1 , Institute of Electronic Ingineering and Industrial Technologies, Chisinau Moldova (the Republic of), 2 , International Laboratory of High Magnetic Fields and Low Temperatures, Wroclaw Poland

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9:00 PM - EE6.29
Emergent Semiconductor Properties in Selenium Nanowire Arrays Fabricated by Direct Size Reduction Technique.

Erol Ozgur 1 , Mecit Yaman 1 , Ozan Aktas 1 2 , Mehmet Bayindir 1 2
1 UNAM-Institute of Materials Science and Nanotechnology, Bilkent University, Ankara Turkey, 2 Physics Department, Bilkent University, Ankara Turkey

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9:00 PM - EE6.3
Diameter Dependent Current-Voltage Characteristics of InSb Nanowires.

Miroslav Penchev 1 , Jiebin Zhong 2 , Mihri Ozkan 1 , Cengiz Ozkan 2
1 Electrical Engineering, University of California, Riverside, Riverside, California, United States, 2 Mechanical Engineering, University of California, Riverside, Riverside, California, United States

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9:00 PM - EE6.30
Enhanced Field-emission and Red Lasing of Ordered CdSe Nanowire Branched Arrays.

Guohua Li 1 2 , Tianyou Zhai 3 , Yang Jiang 1 , Yoshio Bando 3 , Dmitri Golberg 3
1 Materials Science and Engineering, Hefei University of Technology, Hefei, Anhui, China, 2 Dept. Chem. Eng., UC Berkeley, Berkeley, California, United States, 3 , National Institute for Materials Science, Tsukuba, Ibaraki, Japan

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9:00 PM - EE6.32
Magnetic Quantum Oscillations from Surface States of Bi Nanowires.

Leonid Konopko 1 2 , Tito Huber 3 , Albina Nikolaeva 1 2
1 , Institute of Electronic Engineering and Industrial Technologies, Chisinau Moldova (the Republic of), 2 , International Laboratory of High Magnetic Fields and Low Temperatures, Wroclaw Poland, 3 Department of Chemistry, Howard University, Washington, District of Columbia, United States

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9:00 PM - EE6.33
In-fiber Chalcogenide Nanowire Arrays for Nonlinear Photonics Applications.

Tural Khudiyev 1 , Reha Ozalp 1 , Ekin Ozgur 1 , Mecit Yaman 1 , Mehmet Bayindir 1 2
1 , UNAM-Institute of Materials Science and Nanotechnology,Bilkent, Ankara Turkey, 2 Physics, Bilkent, Ankara Turkey

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9:00 PM - EE6.36
Single Nanowire Absorption Spectroscopy: Breaking through the Limitations of Ensemble Measurements.

Jay Giblin 1 , Masaru Kuno 1
1 Chemistry and Biochemistry, University of Notre Dame, Notre Dame, Indiana, United States

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9:00 PM - EE6.37
O2 –Manipulated Synthesis of CdS Nanorods Inspired by Nanoseparation.

Xiaoming Sun 1 , Xiuju Ma 1 , Lu Bai 1 , Junfeng Liu 1 , Zheng Chang 1 , Xue Duan 1 , Joseph Chiang 2
1 , State Key Laboratory of Chemical Resource Engineering, P.O. Box 98, Beijing University of Chemical Technology, Beijing China, 2 , Department of Chemistry and Biochemistry, SUNY- Oneonta, Oneonta, New York, United States

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9:00 PM - EE6.39
Nucleobase-mediated Synthesis of CdS Nanostructures.

Kiran Challa 1 , Hun Hoe Heo 1 , Eui-Tae Kim 1
1 Material Science & Engineering., Chungnam National University., Daejeon, -, Korea (the Republic of)

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9:00 PM - EE6.4
Growth Behaviors and Characterizations of Epitaxial InSb Nanowires by Chemical Vapor Deposition: Substrate, Diameter and Temperature Effects.

Jiebin Zhong 1 , Jian Lin 1 , Miroslav Penchev 2 , Maziar Ghazinejad 1 , Mihri Ozkan 2 , Cengiz Ozkan 1
1 Mechanical Engineering, University of California Riverside, Riverside, California, United States, 2 Electrical Engineering, University of California Riverside, Riverside, California, United States

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9:00 PM - EE6.5
Gallium Phosphide Nanowires for Photoelectrochemical Solar Energy Conversion.

Wen Wen 1 , Stephen Maldonado 1
1 Chemistry, University of Michigan, Ann Arbor, Michigan, United States

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9:00 PM - EE6.6
Insights into Growth Mechanisms of Self-catalyzed GaAs Nanowires Grown by Molecular Beam Epitaxy.

A. Mazid Munshi 1 , Dheeraj L. Dasa 1 , Jelena Todorovic 2 , Antonius T. J. van helvoort 2 , Bjørn-Ove Fimland 1 , Helge Weman 1
1 Department of Electronics and Telecommunications, Norwegian University of Science and Technology, Trondheim Norway, 2 Department of Physics, Norwegian University of Science and Technology, Trondheim Norway

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9:00 PM - EE6.8
Scalable MOCVD Nanowire Growth of Heterostructured Nanowires for Solar Energy Conversion.

Anuj Madaria 1 , Maoqing Yao 2 , Chung-Yung Chi 2 , Daniel Dapkus 2 , Chongwu Zhou 2
1 Material Science, USC, Los Angeles, California, United States, 2 Electrical Engineering, USC, Los Angeles, California, United States

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2011-04-28   Show All Abstracts

Symposium Organizers

Volker Schmidt Max Planck Institute of Microstructure Physics
LincolnJ. Lauhon Northwestern University
Takashi Fukui Hokkaido University
GeorgeT. Wang Sandia National Laboratories
Mikael Bjoerk IBM Research GmbH

Symposium Support

AIXTRON SE
FEI Company
IBM Research Zurich
JEOL USA
Veeco
EE9: Poster Session: Oxide Nanowires
Session Chairs
Thursday PM, April 28, 2011
Salons 7-9 (Marriott)

1:00 AM - EE9: Poster
EE9.14 TRANSFERRED TO EE3.42

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1:00 AM - EE9: Poster
EE9.11 Transferred to EE11.4

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EE7: III-V (Non-Nitride) Nanowires II
Session Chairs
Takashi Fukui
Thursday PM, April 28, 2011
Room 3001 (Moscone West)

9:00 AM - **EE7.1
III-V Nanowire Array Solar Cells.

Knut Deppert 1 , Frank Dimroth 2 , Peter Kailuweit 2 , Martin Magnusson 3 , Guenther Bauer 4 , Julian Stangl 4 , Rafal Dunin-Borkowski 5 , Jakob Wagner 5 , Bernd Witzigmann 6 , Lars Samuelson 1 , Magnus Borgstroem 1
1 Solid State Physics, Lund University, Lund Sweden, 2 , Fraunhofer Institute for Solar Energy Systems, Freiburg Germany, 3 , SOL Voltaics AB, Lund Sweden, 4 Institute of Semiconductor and Solid State Physics, Johannes Kepler University, Linz Austria, 5 Center for Electron Nanoscopy, Technical University of Denmark, Lyngby Denmark, 6 Center for Interdisciplinary Nanostructure Science and Technology, University of Kassel, Kassel Germany

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9:30 AM - EE7.2
Growth and Characterization of InAsSb Nanowires.

Mattias Borg 1 , Kimberly Dick 1 2 , Lars-Erik Wernersson 1 3
1 Department of Solid State Physics, Lund University, Lund, 0, Sweden, 2 Polymer & Materials Chemistry, Lund University, Lund Sweden, 3 Department of Electrical and Information Technology, Lund University, Lund, 0, Sweden

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9:45 AM - EE7.3
Structure, Mechanics, and Conductivity of III-V Semiconductor Nanowires Using Scanning Tunneling Microscopy.

Rainer Timm 1 , Martin Hjort 1 , Alexander Fian 1 , Magnus Borgstroem 1 , Jesper Wallentin 1 , Edvin Lundgren 1 , Lars Samuelson 1 , Anders Mikkelsen 1
1 The Nanometer Structure Consortium, Department of Physics, Lund University, Lund Sweden

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10:00 AM - EE7.4
Surface Photovoltage Study of InP Nanowire Networks.

Andrew Lohn 1 3 , Jin-woo Han 2 , Nobuhiko Kobayashi 1 3
1 Baskin School of Engineering, University of California Santa Cruz, Santa Cruz, California, United States, 3 Nanostructured Energy Conversion Technology and Research (NECTAR), Advanced Studies Laboratories of NASA Ames Research Center, Moffett Field, California, United States, 2 Center for Nanotechnology, NASA Ames Research Center, Moffett Field, California, United States

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10:15 AM - EE7.5
Surface Passivation of Gallium Arsenide Nanowires.

Andrew Chia 1 , Ray LaPierre 1
1 Engineering Physics, McMaster University, Hamilton, Ontario, Canada

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10:30 AM - EE7.6
Poole-Frenkel Effect and Phonon-Assisted Tunneling in GaAs Nanowires.

Aaron Katzenmeyer 1 , Francois Leonard 1 , A. Alec Talin 2 1 , Ping-Show Wong 3 , Diana Huffaker 3
1 , Sandia National Laboratories, Livermore, California, United States, 2 , National Institute of Standards and Technology, Gaithersburg, Maryland, United States, 3 , UCLA, Los Angeles, California, United States

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10:45 AM - EE7.7
Consecutive Photoluminescence and Transmission Electron Microscopy Studies of Single GaAs/AlGaAs Core-shell Nanowires with a GaAsSb Insert.

Fervin Moses Anthonysamy 1 , Jelena Todorovic 2 , Thomas Karlberg 1 , Antonius van Helvoort 2 , Dheeraj Dasa 1 , Phillip Olk 1 , Bjørn-Ove Fimland 1 , Helge Weman 1
1 Institute of Electronics and Telecommunications, Norwegian University of Science and Technology, Trondheim, Sør-Trondelag, Norway, 2 Department of Physics, Norwegian University of Science and Technology, Trondheim, Sør-Trøndelag, Norway

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11:00 AM - EE7: III-V
BREAK

11:30 AM - **EE7.8
Ga-assisted MBE Grown GaAs Nanowires and Related Quantum Heterostructures for Solar Applications.

Anna Fontcuberta i Morral 1
1 , EPFL, Lausanne Switzerland

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12:00 PM - EE7.9
Realization of Hole Quantum Dots in GaSb Nanowires.

Bahram Ganjipour 1 , B.Mattias Borg 1 , Lars-Erik Wernersson 1 , Lars Samuelson Samuelson 1 , Honqgi Xu 1 , Claes Thelander 1
1 Division of Solid State Physics, Lund University, Lund Sweden

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12:15 PM - EE7.10
Stranski-Krastanov InAs Quantum Dots on the Facets of GaAs Nanowires.

Jordi Arbiol 1 , Emanuelle Uccelli 2 3 , Joan Ramon Morante 4 5 , Anna Fontcuberta i Morral 2 3
1 , ICREA and Institut de Ciencia de Materials de Barcelona, CSIC, Bellaterra, CAT, Spain, 2 Laboratoire des Materiaux Semiconducteurs, Ecole Polytechnique Federale de Lausanne, Lausanne Switzerland, 3 Physics Department, Walter Schottky Institut, Garching Germany, 4 Departament d’Electronica, Universitat de Barcelona, Barcelona, CAT, Spain, 5 , Catalonia Institute for Energy Research, Barcelona, CAT, Spain

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12:30 PM - EE7.11
InGaAs Nanopillar Lasers Monolithically Grown on MOSFET-Si.

Fanglu Lu 1 , Thai-Truong Tran 1 , Wai Son Ko 1 , Kar Wei Ng 1 , Roger Chen 1 , Connie Chang-Hasnain 1
1 Electrical Engineering and Computer Sciences, University of California, Berkeley, Berkeley, California, United States

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12:45 PM - EE7.12
InAs/GaAs Core-shell Nanowires Grown by MBE.

Ronit Popovitz-Biro 1 , Palle von Huth 1 , Andrey Kretinin 2 , Hadas Shtrikman 2
1 Electron Microscopy Unit, The Weizmann Institute of Science, Rehovot Israel, 2 Braun Center for Submicron Research, The Weizmann Institute of Science , Rehovot Israel

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EE9: Poster Session: Oxide Nanowires
Session Chairs
Friday AM, April 29, 2011
Salons 7-9 (Marriott)

9:00 PM - EE9.1
UV Activated Electrochemically Grown Zn (Ni, Cu, Co) O Nanorod Ethanol Sensor on Flexible Substrate.

Hosang Ahn 1 , Seon-Bae Kim 1 , Minseo Park 2 , Dong-Joo Kim 1
1 Materials Eng., Auburn Univ., Auburn, Alabama, United States, 2 Physics, Auburn University, Auburn, Alabama, United States

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9:00 PM - EE9.12
Phase Shift Lithography Based Nanopatterning for the Fabrication of Large Scale Si and ZnO Nanowire Arrays.

Kittitat Subannajui 1 , Firat Guder 1 , Margit Zacharias 1
1 , IMTEK, Uni-Freiburg, Freiburg Germany

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9:00 PM - EE9.13
Catalyzed Vapor-liquid-solid Oxidation: Germanium Oxide Nanowires.

Marika Gunji 1 , Shruti Thombare 1 , Shu Hu 1 , Paul McIntyre 1 2
1 Materials Science and Engineering, Stanford University, Stanford, California, United States, 2 Geballe Laboratory for Advanced Materials, Stanford University, Stanford, California, United States

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9:00 PM - EE9.15
Multi-junction ZnO Nanowires for Enhanced Surface Area and Light Trapping Solar Cells and Room Temperature Gas Sensing Applications.

Ghim Wei Ho 1 , Moe Kevin 1 , Wei Li Ong 1 , Zhihan Lim 1
1 Electrical & Computer Engineering, National University of Singapore, Singapore Singapore

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9:00 PM - EE9.16
In2O3:Sn-TiO2 Core-shell Nanowire Array Architecture for Dye-sensitized Solar Cells.

Hyun Soo Han 1 , Jun Hong Noh 1 , Sangwook Lee 1 , Ju Seong Kim 1 , Hyun Suk Jung 2 , Kug Sun Hong 1
1 Materials Science and Engineering, Seoul National University, Seoul Korea (the Republic of), 2 School of Advanced Materials Engineering, Kookmin University, Seoul Korea (the Republic of)

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9:00 PM - EE9.17
Low-voltage Operating SnO2 Nanowire Active-matrix Devices on a Flexible Polyimide Substrate.

Sahngki Hong 1 , Jeong Sook Ha 1
1 Department of Chemical and Biological Engineering, Korea University, Seoul Korea (the Republic of)

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