Meetings & Events

 

Spring 2011 Logo2011 MRS Spring Meeting & Exhibit

April 25-29, 2011 | San Francisco
Meeting Chairs: Ping Chen, Chang Beom-Eom, Samuel S. Mao, Ryan O'Hayre

Symposium O : Materials, Processes, and Reliability for Advanced Interconnects for Micro- and Nanoelectronics

2011-04-26   Show All Abstracts

Symposium Organizers

Geraud Dubois IBM Almaden Research Center
Mikhail Baklanov IMEC
Christian Dussarrat Air Liquide
Terukazu Kokubo JSR Tsukuba Research Laboratories
Shinichi Ogawa National Institute of Advanced Industrial Science and Technology

Symposium Support

Air Liquide
Air Products
Applied Materials Inc
GLOBALFOUNDRIES
IBM Almaden Research Center
JSR Micro Inc
Tokyo Electron America
O1: Low-k Materials I
Session Chairs
Griselda Bonilla
Geraud Dubois
Tuesday AM, April 26, 2011
Room 3000 (Moscone West)

9:15 AM - **O1.1
Development of Ultralow-k pSiCOH Dielectrics and Implementation in Interconnect Technology.

Alfred Grill 1 , Stephen Gates 1 , E.Todd Ryan 2
1 , IBM -T.J. Watson Research Center, Yorktown Heights, New York, United States, 2 , GLOBALFOUNDRIES, Albany, New York, United States

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9:45 AM - **O1.2
Ultra Low-k Materials Based on Self-assembled Organic Polymers.

Marianna Pantouvaki 1 , Larry Zhao 2 , Craig Huffman 1 , Kris Vanstreels 1 , Patrick Verdonck 1 , Yukiharu Ono 3 , Michio Nakajima 3 , Koji Nakatani 3 , Gerald Beyer 1 , Mikhail Baklanov 1
1 , Imec, Leuven Belgium, 2 , Intel, Leuven Belgium, 3 , Sumitomo Bakelite Co, Ltd, Yokohama Japan

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10:15 AM - O1.3
Molecularly Reinforced Sol-gel Glasses with Improved Pore-size Distribution.

Willi Volksen 1 , Geraud Dubois 1 , Theo Frot 1 , Teddie Magbitang 1 , Phil Rice 1 , Leslie Krupp 1 , Sebastian Engelmann 2 , Robert Bruce 2 , Sampath Purushothaman 2 , Hisashi Nakagawa 3 , Manabu Sekiguchi 3 , Terukazu Kokubo 3
1 , IBM Almaden Research Center, San Jose, California, United States, 2 , IBM T.J., Watson Research Center, Yorktown Heights, New York, United States, 3 , JSR Tsukuba Research Labs, Tsukuba, Ibaraki, Japan

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10:30 AM - O1.4
New Designs of Hydrophobic and Mesostructured Ultra Low k Materials with Isolated Mesopores.

Anthony Grunenwald 1 , André Ayral 1 , Pierre Antoine Albouy 2 , Vincent Rouessac 1 , Patrice Gergaud 4 , Christophe Licitra 4 , David Jauffres 3 , Marc Verdier 3 , Aziz Zenasni 4 , Vincent Jousseaume 4
1 , European Membrane Institute, Montpellier France, 2 , Laboratoire de Physique des Solides, Orsay France, 4 , CEA-LETI-MINATEC Campus, grenoble France, 3 , SIMAP-INPG, Grenoble France

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10:45 AM - O1.5
Spin-on-dielectric Process for Nanoscale High Aspect Ratio Trenches for Device Isolation.

Suresh Regonda 1 , Eungjae Park 2 , Lisa Spurgin 1 , Wenchuang Hu 1 , Hyunjin Kim 2 , Jaehyun Kim 2 , Moon Kim 1 , Jiyoung Kim 1
1 Electrical Engineering, University of Texas at Dallas, Richardson, Texas, United States, 2 , Dongjin Semichem , Hwaseong-SI, Gyeonggi-Do, Korea (the Republic of)

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11:00 AM - *
Break

11:30 AM - **O1.6
Molecular Structure and Design of Ultra-low-k Hybrid Glasses.

Reinhold Dauskardt 1 , Mark Oliver 1 , Geraud Dubois 2
1 , Stanford University, Stanford, California, United States, 2 , IBM Almaden, Almaden, California, United States

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12:00 PM - O1.7
Atomic-scale Modeling of the Mechanical Behavior of Ultra-low-dielectric-constant Mesoporous Amorphous Silicate Films.

Rauf Gungor 1 , James Watkins 2 , Dimitrios Maroudas 1
1 Chemical Engineering, University of Massachusetts, Amherst, Massachusetts, United States, 2 Polymer Science and Engineering, University of Massachusetts, Amherst, Massachusetts, United States

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12:15 PM - O1.8
Molecular Design of High-stiffness ULK Glasses for Mechanically Robust Interconnects.

Mark Oliver 1 , Geraud Dubois 2 1 , Theo Frot 2 , Mark Sherwood 2 , Reinhold Dauskardt 1
1 , Stanford University, Stanford, California, United States, 2 , IBM Almaden Research Center, San Jose, California, United States

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12:30 PM - O1.9
High Toughness and Moisture-insensitive Hydrogenated Amorphous Silicon Carbide Dielectric Films.

Yusuke Matsuda 1 , Sean King 2 , Jeff Biefield 2 , Reinhold Dauskardt 1
1 , Stanford University, Stanford, California, United States, 2 , Intel Corporation, Hillsboro, Oregon, United States

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2011-04-27   Show All Abstracts

Symposium Organizers

Geraud Dubois IBM Almaden Research Center
Mikhail Baklanov IMEC
Christian Dussarrat Air Liquide
Terukazu Kokubo JSR Tsukuba Research Laboratories
Shinichi Ogawa National Institute of Advanced Industrial Science and Technology
O5: Reliability
Session Chairs
Francesca Iacopi
Wednesday AM, April 27, 2011
Room 3000 (Moscone West)

11:30 AM - **O5.1
Impact of Dielectric Materials on Semiconductor BEOL Reliability.

Griselda Bonilla 1 , Thomas Shaw 1 , Xiao Liu 1 , Chao-Kun Hu 1 , Eric Liniger 1 , Stephan Cohen 1 , Hosadurga Shobha 2 , Christopher Penny 2
1 , IBM TJ Watson Research Center, Yorktown Heights, New York, United States, 2 , IBM at Albany Nanotech- Center for Semiconductor Research, Albany, New York, United States

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12:00 PM - O5.2
Interface Adhesion and Related Device Properties of Ultra-thin Cu Diffusion Barrier and High-k / Metal Gate Films.

Ryan Birringer 1 , Reinhold Dauskardt 1
1 Materials Science and Engineering, Stanford University, Stanford, California, United States

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12:15 PM - O5.3
The Effect of Thermal Stress on Cu-migration-induced Inter-metal-dielectric Breakdown.

Sung-Yup Jung 1 , Han-Wool Yeon 1 , Yoo-Yong Lee 1 , Jungwoo Pyun 2 , Young-Chang Joo 1
1 Department of Materials Science and Enginnering, Seoul National University, Seoul Korea (the Republic of), 2 Product Quality Assurance Team, Memory Division, Samsung Electronics Co., Hwasung-City, Gyeonggi-Do, Korea (the Republic of)

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12:30 PM - O5.4
Reliability Characterization of Copper Vias in Silicon by Thermal Imaging Technique.

Shila Alavi 2 , Kazuaki Yazawa 2 , Glenn Alers 2 , James Christofferson 2 , Bjorn Vermeersch 2 , Ali Shakouri 2
2 Electrical Engineering, UCSC, Santa Cruz, California, United States

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O6: Metallization I
Session Chairs
Geraud Dubois
Christian Dussarrat
Wednesday PM, April 27, 2011
Room 3000 (Moscone West)

2:30 PM - **O6.1
Possibilities of CVD Mn Oxide as a Diffusion Barrier Layer for Advanced LSI Interconnections.

Junichi Koike 1
1 Dept. of Materials Science, Tohoku University, Sendai, Miyagi, Japan

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3:00 PM - O6.2
32nm Node Highly Reliable Cu/Low-k Integration Technology with CuMn Doped Seed.

Shaoning Yao 1 , Vincent Mcgahay 1 , Matthew Angyal 1 , Andrew Simon 1 , Cathryn Christiansen 2 , Baozhen Li 2 , Tom Lee 2 , Fen Chen 2 , Paul McLaughlin 1 , Oluwafemi Ogunsola 1 , Stephan Grunow 1
1 , IBM, Hopewell junction, New York, United States, 2 , IBM Micorelectronics Division, Essex Junction, Vermont, United States

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3:15 PM - O6.3
Amorphous Ta-N as a Diffusion Barrier for Cu Metallization.

Neda Dalili 1 , Qi Liu 1 , Douglas Ivey 1
1 Chemical and Materials Engineering, University of Alberta, Edmonton, Alberta, Canada

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3:30 PM - O6.4
Structural and Barrier Properties of a Manganese Oxide Layer Formed by Chemical Vapor Deposition.

Nguyen Mai Phuong 1 , Kenji Matsumoto 2 , Kaoru Maekawa 2 , Junichi Koike 1
1 Material Science, Tohoku University, Sendai, Miyagi, Japan, 2 Technology Development Center, Tokyo Electron Ltd., Nirasaki Japan

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3:45 PM - O6.5
Bottom-up Filling of Surfactant Catalyzed Chemical Vapor Deposition (CVD) of Copper and Copper-manganese Alloy in Narrow Trenches.

Yeung Au 1 , Youbo Lin 1 , Roy Gordon 1
1 Department of Chemistry and Chemical Biology, Harvard University, Cambridge, Massachusetts, United States

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4:00 PM - *
Break

4:30 PM - **O6.6
Microstructure-based Statistical Model on Cap Layer Effects for Electromigration in Cu Interconnects Beyond the 45nm Node.

Lijuan Zhang 1 , Linjun Cao 1 , Paul Ho 1 , Oliver Aubel 2 , Christian Hennesthal 2
1 Laboratory for Interconnect and Packaging, Microelectronics Research Center, The University of Texas at Austin, Austin, Texas, United States, 2 Dresden Module One LLC & Co., GLOBALFOUNDRIES, Dresden Germany

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5:00 PM - O6.7
Atomic Layer Deposition of Novel RuAlO Thin Films for Seedless Copper Electroplating Applications.

Taehoon Cheon 1 , Sang-Hyeok Choi 1 , Soo-Hyun Kim 1 , Sunjung Kim 2 , Kye-Sun Park 2
1 School of Materials Science and Engineering, Yeungnam University, Gyeongsan-si, Gyeongsangbuk-do, Korea (the Republic of), 2 School of Materials Science and Engineering, University of Ulsan, Ulsan Korea (the Republic of)

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5:15 PM - O6.8
Atomic Layer Deposition (ALD) of Ru Thin Films using a Novel Zero Metal Valent Ru(0) Metallorganic Precursor and Application to the Seed Layer for Cu Electroplating.

Sanghyuk Choi 1 , Taehoon Cheon 1 , Kwang Deok Lee 2 , Jung Woo Park 2 , Soo-Hyun Kim 1
1 Materials Science and Engineering, Yeongnam Univ., Gyeongsan-si, Gyeongbuk, Korea (the Republic of), 2 Thin Film Material Team, Hansol Chemical, Seoul Korea (the Republic of)

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2011-04-28   Show All Abstracts

Symposium Organizers

Geraud Dubois IBM Almaden Research Center
Mikhail Baklanov IMEC
Christian Dussarrat Air Liquide
Terukazu Kokubo JSR Tsukuba Research Laboratories
Shinichi Ogawa National Institute of Advanced Industrial Science and Technology
O8: 3D Packaging
Session Chairs
Francesca Iacopi
Thursday PM, April 28, 2011
Room 3000 (Moscone West)

2:30 PM - **O8.1
Sub-micron Scale Local Strength Evaluation for LSI Interconnect Structures.

Shoji Kamiya 1 5 , Nobuyuki Shishido 1 5 , Hisashi Sato 1 5 , Masahiro Nishida 1 5 , Chen Chuangton 1 , Masaki Omiya 2 5 , Tomoji Nakamura 3 , Takashi Suzuki 3 , Takeshi Nokuo 4 5 , Tadahiro Nagasawa 4 5
1 , Nagoya Institute of Technology, Nagoya, Aichi, Japan, 5 , JST CREST, Chiyoda-ku, Tokyo, Japan, 2 , Keio University, Yokohama, Kanagawa, Japan, 3 , Fujitsu Laboratories Limited, Atsugi, Kanagawa, Japan, 4 , JEOL Limited, Akishima, Tokyo, Japan

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3:00 PM - O8.2
Probing the Mechanics and Reliability of Multilayer Microelectronic Interconnect Structures.

Alexander Hsing 1 , Andrew Kearney 2 , Vivian Ryan 3 , Reinhold Dauskardt 1
1 , Stanford University, Stanford, California, United States, 2 , Cisco Systems, San Jose, California, United States, 3 , GLOBALFOUNDRIES, Inc., Albany, California, United States

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3:15 PM - O8.3
Mechanical Stress Measurements in Cu Through-silicon via (TSV) Samples Using In Situ Synchrotron X-ray Microdiffraction for 3-D Integration.

Arief Budiman 1 , Hae-A-Seul Shin 2 , Byoung-Joon Kim 2 , Sung-Hwan Hwang 2 , H. Son 3 , M. Suh 3 , Q. Chung 3 , K. Byun 3 , Nobumichi Tamura 4 , Martin Kunz 4 , Young-Chang Joo 2
1 Center for Integrated Nanotechnologies (CINT), Los Alamos National Laboratory (LANL), Los Alamos, New Mexico, United States, 2 Department of Materials Science and Engineering, Seoul National University (SNU), Seoul Korea (the Republic of), 3 PKG Development Group, R&D Division, Hynix Semiconductor, Inc., Seoul Korea (the Republic of), 4 Advanced Light Source (ALS), Lawrence Berkeley Nationa Laboratory(LBNL), Berkeley, California, United States

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3:30 PM - O8.4
Evolution of Damage during Thermal Cycling and Relation between Mechanical Stress and Microstructure in through Silicon via for 3D Integration.

Hae-A-Seul Shin 1 , Arief Budiman 2 , Byoung-Joon Kim 1 , Sung-Hwan Hwang 1 , Ho-Young Son 3 , Min-Suk Suh 3 , Qwan-Ho Chung 3 , Kwang-Yoo Byun 3 , Nobumichi Tamura 4 , Martin Kunz 4 , Young-Chang Joo 1
1 Materials Science and Engineering, Seoul National University, Seoul Korea (the Republic of), 2 Center for Integrated Nanotechnologies , Los Alamos National Laboratory, Los Alamos , New Mexico, United States, 3 Research & Development Division, Hynix Semiconductor Inc., Icheon Korea (the Republic of), 4 Advanced Light Source (ALS), Lawrence Berkeley National Laboratory, Berkeley, California, United States

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3:45 PM - O8.5
Micro-bump Impact on Reliability and Performance in Through-silicon Via Stacks.

Aditya Karmarkar 1 , Xiaopeng Xu 2
1 , Synopsys (India) Private Limited, Hyderabad, Andhra Pradesh, India, 2 , Synopsys, Inc., Mountain View, California, United States

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4:00 PM - *
Break

4:30 PM - O8.6
Out-of-Plane Catalyst Rotation in Metal-assisted Chemical Etching for Complex 3D Nano-scale to Micron-scale Manufacturing.

Owen Hildreth 1 , C. Wong 1
1 , Georgia Institute of Technology, Atlanta, Georgia, United States

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4:45 PM - O8.7
Cu-contamination-induced Degradation of nMOSFET Characteristics in 3D-Integrated Device under Thermal and Electric Field Stress.

Han-Wool Yeon 1 , Sung-Yup Jung 1 , Jungwoo Pyun 2 , Hyungwook Kim 2 , Dohyun Baek 2 , Young-Chang Joo 1
1 Department of Materials Science and Engineering, Seoul National University, Seoul Korea (the Republic of), 2 Product Quality Assurance Team, Memory Division, Samsung Electronics Co., Hwasung City, Gyeonggi-Do, Korea (the Republic of)

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5:15 PM - O8.9
Tailoring the Crystallographic Texture and Electrical Properties of Inkjet-printed Interconnects for Use in Microelectronics.

Romain Cauchois 1 2 , Mohamed Saadaoui 2 , Karim Inal 2 , Beatrice Dubois-Bonvalot 1 , Jean-Christophe Fidalgo 1
1 Innovation and Manufacturing Technologies Department, Gemalto, Gemenos France, 2 Microelectronics Center of Provence, Ecole Nationale Supérieure des Mines de Saint-Etienne, Gardanne France

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2011-04-29   Show All Abstracts

Symposium Organizers

Geraud Dubois IBM Almaden Research Center
Mikhail Baklanov IMEC
Christian Dussarrat Air Liquide
Terukazu Kokubo JSR Tsukuba Research Laboratories
Shinichi Ogawa National Institute of Advanced Industrial Science and Technology
O10: Emerging Technologies
Session Chairs
Sean King
Shinichi Ogawa
Friday AM, April 29, 2011
Room 3000 (Moscone West)

9:45 AM - **O10.1
Optical Interconnect Technologies Based on Silicon Photonics.

Wim Bogaerts 1 , Dries Van Thourhout 1 , Philippe Absil 2 , Shankar Kumar Selvaraja 1 , Pieter Dumon 1 , Hui Yu 1 , Joris Van Campenhout 2 , Thijs Spuessens 1 , Roel Baets 1
1 Information Technology, imec - Ghent University, Gent Belgium, 2 Process Technology, imec v.z.w., Leuven Belgium

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10:15 AM - O10.2
Vertically Aligned Carbon Nanotubes as Flip Chip Interconnects.

Dunlin Tan 1 , Beng Kang Tay 1
1 School of Electrical & Electronic Engineering, Nanyang Technological University, Singapore Singapore

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10:30 AM - O10.3
Silicide Materials for Aligned Carbon Nanotube Synthesis in Interconnect Applications.

Can Zhang 1 , Feng Yan 1 , Guofang Zhong 1 , Bernhard Bayer 1 , Bingan Chen 1 , Stephan Hofmann 1 , John Robertson 1
1 , University of Cambridge, Cambridge United Kingdom

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10:45 AM - O10.4
Comparison of Electrical Characteristics of Multilayer Graphene and Multiwalled Carbon Nanotubes for Interconnect Applications.

Neha Kulshrestha 1 , Abhishek Misra 2 , Reeti Bajpai 1 , Kiran Hazra 1 , Soumyendu Roy 1 , Devi Shankar Misra 1
1 Physics, Indian Institute Of Technology Bombay, Mumbai, 400076, India, 2 Electrical Engineering, Indian Institute Of Technology Bombay, Mumbai, Maharashtra, India

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11:00 AM - *
Break

11:30 AM - O10.5
Emerging Materials for Nanoscale Interconnects.

Cengiz Ozkan 1 , Ali Guvenc 1 , Jian Lin 1 , Miro Penchev 1 , Jiebin Zhong 1 , Mihri Ozkan 1
1 Mechanical Engineering, University of California at Riverside, Riverside, California, United States

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11:45 AM - O10.6
Stretchable Silicon Integrated Circuits with Graphene Interconnects.

Won Ho Lee 1
1 Material Science and Engineering, Sungkyunkwan University, Suwon Korea (the Republic of)

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12:00 PM - O10.7
E-beam Deposited Tungsten Contacts for Nanocarbon Interconnect Test Devices.

Nobuhiko Kanzaki 1 , Shusaku Maeda 1 , Patrick Whilhite 1 , Toshishige Yamada 1 , Cary Yang 1
1 , Santa Clara Univ., Santa Clara, California, United States

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12:15 PM - O10.8
A Simple Patterning Method of Solution-Processed ZnO Thin Film for the Flexible Transparent Thin Film Transistor.

Kyongjun Kim 1 , Si Yoon Park 1 , Seung-Chul Yew 1 , Ji hyun Lee 1 , Sungyun Chung 1 , Hanju Jo 1 , Youn Sang Kim 1
1 Department of Nano Science and Technology, Graduate School of Convergence Science and Technology, Seoul National University, Suwon-si, Gyeonggi-do Korea (the Republic of)

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