Meetings & Events

 

Spring 2011 Logo2011 MRS Spring Meeting & Exhibit

April 25-29, 2011 | San Francisco
Meeting Chairs: Ping Chen, Chang Beom-Eom, Samuel S. Mao, Ryan O'Hayre

Symposium P : Interface Engineering for Post-CMOS Emerging Channel Materials

2011-04-26   Show All Abstracts

Symposium Organizers

PeideD. Ye Purdue University
RobertM. Wallace University of Texas-Dallas
John Robertson Cambridge University
Shinichi Takagi The University of Tokyo

Symposium Support

AIXTRON SE
IQE
Kurt J. Lesker Company
Omicron NanoTechnology USA
P3: Poster Session
Session Chairs
Peide Ye
Tuesday PM, April 26, 2011
Exhibition Hall (Moscone West)

1:00 AM -
P3.1 Transferred to P7.6

P1: High-k on III-V
Session Chairs
Serge Oktyabsky
Peide Ye
Tuesday AM, April 26, 2011
Room 3003 (Moscone West)

9:30 AM - **P1.1
III-V CMOS: The Key to Sub-10 nm Electronics?

Jesus del Alamo 1
1 , MIT, Cambridge, Massachusetts, United States

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10:00 AM - **P1.2
High κ’s/high Carrier Mobility Semiconductors for Post Si CMOS Nano-electronics.

Pen Chang 1 , Tsung-Da Lin 1 , Lung-Kun Chu 1 , Han-Chin Chiu 1 , Yu-Hsing Chang 1 , Mao-Lin Huang 2 , Tun-Wen Pi 3 , Minghwei Hong 1 , Jueinai Kwo 2 4
1 Department of Materials Science and Engineering, National Tsinghua University, Hsinchu Taiwan, 2 Department of Physics, National Tsinghua University, Hsinchu Taiwan, 3 , National Synchrotron Radiation Research Center, Hsinchu Taiwan, 4 Center for Condensed Matter Sciences, National Taiwan University, Taipei Taiwan

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10:30 AM - P1.3
On the Surface Passivation of GaAs and In0.53Ga0.47As with Amorphous Silicon Interlayer.

Jean Fompeyrine 1 , Mario El-Kazzi 1 , Chiara Marchiori 1 , Dave Webb 1 , Christian Gerl 1 , Lukas Czornomaz 1 , Christophe Rossel 1 , Mirja Richter 1 , Maryline Sousa 1 , Daniele Caimi 1 , Heinz Siegwart 1 , Tomas Smets 2 1
1 Zurich Laboratory, IBM ResearchGmbH, Rueschlikon Switzerland, 2 Departement of Physics and Astronomy, Solid State Physics and Magnetism, Leuven Belgium

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10:45 AM - P1.4
Low Temperature Characterization of HfO2 InAs MOS Diodes.

Erik Lind 1 , Lars-Erik Wernersson 2 1
1 Solid State Physics, Lund University, Lund Sweden, 2 Electrical and Information Technology, Lund University, Lund Sweden

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11:00 AM -
BREAK

11:30 AM - **P1.5
III-V MOSFETs for Sub-15 nm Technology Generation CMOS Applications.

Iain Thayne 1
1 School of Engineering, University of Glasgow, Glasgow United Kingdom

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12:00 PM - P1.6
Interface Modification in the High-k/n-In0.53Ga0.47As System.

Paul Hurley 1 , Eamon OConnor 1 , Terrance ORegan 1 , Scott Monaghan 1 , Vladimir Djara 1 , Negara Adi 1 , Aileen OMahony 1 , Ian Povey 1 , Alan Blake 1 , Dan OConnell 1 , Martyn Pemble 1 , Karim Cherkaoui 1
1 Tyndall, University College Cork, Cork Ireland

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12:15 PM - P1.7
TiO2/Al2O3 Bilayer Dielectrics as Gate Oxide for In0.53Ga0.47As Metal Oxide Semiconductor Devices.

Jaesoo Ahn 1 , Marika Gunji 1 , Irina Geppert 2 , Yu Yuan 3 , Yuan Taur 3 , Moshe Eizenberg 2 , Paul McIntyre 1
1 Materials Science and Engineering, Stanford University, Stanford, California, United States, 2 Materials Engineering, Technion - Israel Institute of Technology, Haifa Israel, 3 Electrical and Computer Engineering, University of California, San Diego, San Diego, California, United States

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12:30 PM - **P1.8
High Performance InGaAs Quantum Well FETs with High-k Dielectrics.

Marko Radosavljevic 1
1 , Intel Corporation, Hillsboro, Oregon, United States

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P3: Poster Session
Session Chairs
Peide Ye
Tuesday PM, April 26, 2011
Exhibition Hall (Moscone West)

6:00 PM - P3.2
Density-Functional Theory Molecular Dynamics Simulations of a-Al2O3/InGaAs, a-HfO2/InGaAs, and a-ZrO2/InGaAs Interfaces.

Evgueni Chagarov 1 , Andrew Kummel 1
1 , UCSD, La Jolla, California, United States

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6:00 PM - P3.3
La2O3-Al2O3-TiO2 Multilayer Gate Dielectrics for Ge MOS Devices Prepared by Atomic Layer Deposition.

Chih Chiao Chen 1 , Jyun Kai Lan 1 , Jyun Yi Wu 1 , Ming Ho Lin 1 , Tai Bor Wu 1 , Su Jien Lin 1
1 Material Science and Engineering, National Tsing Hua University, Hsinchu Taiwan

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6:00 PM - P3.4
Effect of Different La2O3 Locations on Electrical Properties and Crystal Structure in HfO2/La2O3/HfO2 Gate Stack.

Jyun-Yi Wu 1 , Ming-Ho Lin 1 , Su-Jien Lin 1 , Tai-Bor Wu 1
1 Materials Science and Engineering, National Tsing Hua University, Hsinchu Taiwan

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6:00 PM - P3.5
CVD Growth of Graphene with Micro-engineered Metal Catalyst.

Bin Yu 1 , Bhaskar Nagabhirava 1 , Eisenbraun Eric 1
1 CNSE, SUNY-Albany, Albany, New York, United States

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6:00 PM - P3.7
DC/AC Performance Analysis of Indium Antimonide Nanowires.

Ali Guvenc 1 , Miroslav Penchev 1 , Jiebin Zhong 2 , Cengiz Ozkan 2 3 , Mihrimah Ozkan 1
1 Electrical Engineering, University of California, Riverside, Riverside, California, United States, 2 Mechanical Engineering, University of California, Riverside, Riverside, California, United States, 3 Materials Science and Engineering Program, University of California, Riverside, Riverside, California, United States

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6:00 PM - P3.8
Deposition of Lanthanum Hafnium Titanium Oxide High-κfilms on Ge Substrate by Atomic Layer Deposition.

Jyun-Kai Lan 1 , Chih-Chiao Chen 1 , Ming-Ho Lin 1 , Jyun-Yi Wu 1 , Tai-Bor Wu 1 , Su-Jien Lin 1
1 , National Tsing Hua University, Hsinchu Taiwan

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6:00 PM - P3.9
Atomistic Study of Passivation of Ge(100) Surface via Nitridation and Oxidation.

Joon Sung Lee 1 2 , Sarah Bishop 2 , Tobin Kaufman-Osborn 1 2 , Andrew Kummel 2
1 Materials Science and Engineering, University of California, San Diego, La Jolla, California, United States, 2 Chemistry and Biochemistry, University of California, San Diego, La Jolla, California, United States

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2011-04-27   Show All Abstracts

Symposium Organizers

PeideD. Ye Purdue University
RobertM. Wallace University of Texas-Dallas
John Robertson Cambridge University
Shinichi Takagi The University of Tokyo

Symposium Support

AIXTRON SE
IQE
Kurt J. Lesker Company
Omicron NanoTechnology USA
P4: High-k on Ge and III-V
Session Chairs
A Toriumi
R. Wallace
Wednesday AM, April 27, 2011
Room 3003 (Moscone West)

9:00 AM - **P4.1
High Mobility Strained Ge Channels and Gate Dielectrics for Planar and Non-Planar p-MOSFETs.

Judy Hoyt 1 , Pouya Hashemi 1 , Hyung-Seok Lee 1 , Maruf Bhuiyan 1 , Dimitri Antoniadis 1
1 , MIT, Cambridge, Massachusetts, United States

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9:30 AM - **P4.2
Fundamental Aspects and Interface Engineering of Ge-MOS Devices.

Heiji Watanabe 1 , Katsuhiro Kutsuki 1 , Lori Hideshima 1 , Gaku Okamoto 1 , Shoichiro Saito 1 , Tomoya Ono 1 , Takuji Hosoi 1 , Takayoshi Shimura 1
1 Department of Material and Life Science, Osaka University, Suita, Osaka, Japan

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10:00 AM - P4.3
Impact of Post Deposition Annealing Treatment on the Interface and Oxide Defects in LaGeOx Grown on Ge Substrates by Molecular Beam Deposition.

Alessandro Molle 1 , Silvia Baldovino 1 2 , Marco Fanciulli 1 2 , Dimitra Tsoutsou 3 , Evangelos Golias 3 , Athanasios Dimoulas 3
1 Laboratorio MDM, CNR-IMM, Agrate Brianza (MB) Italy, 2 Dipartimento di Scienza dei Materiali, Universita degli Studi di Milano Bicocca, Milano Italy, 3 , NCSR-Demokritos, Athens Greece

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10:15 AM - P4.4
LaLuO3 as Gate Dielectric for Ge MOSFETs towards 1nm EOT.

Min Xu 1 , Yiqun Liu 2 , Chen Wang 1 , Roy Gordon 2 , Peide Ye 1
1 ECE, Purdue, West Lafayette, Indiana, United States, 2 Chemistry and Chemical Biology, Harvard, Cambridge, Massachusetts, United States

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10:30 AM - P4.5
Reduction in Interface State Density for High-k/III-V MOS Capacitors by Incorporation of InP Capping Layers Grown In-situ by MOVPE on In0.53Ga0.47As.

Eamon O'Connor 1 , Roger Nagle 1 , Kevin Thomas 1 , Emanuele Pelucchi 1 , Aileen O'Mahony 1 , Alan Blake 1 , Karim Cherkaoui 1 , Scott Monaghan 1 , Ian Povey 1 , Martyn Pemble 1 , Paul Hurley 1
1 , Tyndall National Institute, Cork Ireland

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10:45 AM - P4.6
Interface Properties of GeNx/Ge Fabricated by Electron-cyclotron-resonance Plasma Nitridation.

Yohei Otani 1 , Yukio Fukuda 1 , Tetsuya Sato 2 , Hiroshi Toyota 3 , Hiroshi Okamoto 3 , Toshiro Ono 3
1 , Tokyo University of Science, Suwa, Chino, Nagano, Japan, 2 , University of Yamanashi, Kofu, Yamanashi, Japan, 3 , Hirosaki University, Hirosaki, Aomori, Japan

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11:00 AM -
BREAK

11:30 AM - **P4.7
Integration of High-k Dielectrics on Germanium for High-performance MOS: The EOT vs. Mobility Challenge.

Matty Caymax 1 , Florence Bellenger 1 2 , Guy Brammertz 1 , Dennis Lin 1 , Laura Nyns 1 , Sonja Sioncke 1 , Kristin De Meyer 1 2 , Marc Heyns 1 3
1 FPS, imec, Leuven Belgium, 2 Department of Electrical Engineering, KULeuven, Leuven Belgium, 3 Department of Metallurgy and Materials Engineering, KULeuven, Leuven Belgium

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12:00 PM - **P4.8
Materials Issues in III-V P-Channel MOSFETs.

Serge Oktyabrsky 1 , Padmaja Nagaiah 1 , Michael Yakimov 1 , Hassa Bakhru 1 , Richard Moore 1 , Vadim Tokranov 1
1 CNSE, University at Albany, Albany, New York, United States

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12:30 PM - P4.9
Interface Characterization of High-k Dielectric/Narrow Bandgap Semiconductor: ALD Al2O3 on InAs and InSb.

Chen Wang 1 , Kun Xu 1 , Min Xu 1 , Nathan Conrad 1 , Peide Ye 1
1 , Purdue, West Lafayette, Indiana, United States

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12:45 PM - P4.10
Origin of Schottky Barrier Height Shifts on Ge and GaAs by Inserting Thin Insulator Layers.

Liang Lin 1 , Stewart Clark 2 , John Robertson 1
1 Engineering Dept,, Cambridge University, Cambridge United Kingdom, 2 Physics Dept, Durham University, Durham United Kingdom

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2011-04-28   Show All Abstracts

Symposium Organizers

PeideD. Ye Purdue University
RobertM. Wallace University of Texas-Dallas
John Robertson Cambridge University
Shinichi Takagi The University of Tokyo

Symposium Support

AIXTRON SE
IQE
Kurt J. Lesker Company
Omicron NanoTechnology USA
P7: High K on III-V Semiconductors
Session Chairs
Andy Kummel
Susanne Stemmer
Thursday PM, April 28, 2011
Room 3003 (Moscone West)

2:30 PM - **P7.1
Scaling of InGaAs MOSFETs into Deep Submicron Regime.

Yanqing Wu 1 , Jiangjiang Gu 2 , Peide Ye 2
1 , IBM T.J. Watson Research Center, Yorktown Heights, New York, United States, 2 Electrical and Computer Engineering and Birck Nanotechnology Center, Purdue Univ., West lafayette, Indiana, United States

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3:00 PM - P7.2
AlGaAs/GaAs Nanowire HEMT: Planar GaAs NW and AlGaAs Shell Interface Study.

Xin Miao 1 , Xiuling Li 1
1 , University of Illinois, Urbana, Illinois, United States

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3:15 PM - P7.3
Influence of Trimethylaluminium (TMA) Exposure on the Growth and Electrical Characteristics of Gate Stacks.

Yoontae Hwang 1 , Roman Engel-Herbert 2 , Susanne Stemmer 1
1 Materials Department, University of California, Santa Barbara, Santa Barbara, California, United States, 2 Department of Materials Science and Engineering, Pennsylvania State University, University Park, Pennsylvania, United States

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3:30 PM - P7.4
Optimizing Initial Cycles of Al2O3 ALD on InGaAs: Impact of Al(CH3)3 Dosage and In-line Monitoring by Auger Electron Spectroscopy.

Wipakorn Jevasuwan 1 , Yuji Urabe 1 , Tatsuro Maeda 1 , Noriyuki Miyata 1 , Tetsuji Yasuda 1 , Hisashi Yamada 2 , Masahiko Hata 2 , Noriyuki Taoka 3 , Mitsuru Takenaka 3 , Shinichi Takagi 3
1 , National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Ibaraki, Japan, 2 , Sumitomo Chemical Co. Ltd., Tsukuba, Ibaraki, Japan, 3 , The University of Tokyo, Bunkyo-ku, Tokyo, Japan

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3:45 PM - P7.5
Interface Composition of HfO2 and Al2O3 Thin Films on InAs Substrates and InAs Nanowires Studied by X-ray Photoemission Spectroscopy.

Rainer Timm 1 , Martin Hjort 1 , Alexander Fian 1 , Erik Lind 1 , Claes Thelander 1 , Jesper Andersen 1 , Lars-Erik Wernersson 1 , Anders Mikkelsen 1
1 The Nanometer Structure Consortium, Department of Physics, Lund University, Lund Sweden

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4:00 PM -
BREAK

4:30 PM - P7.6
Probing the Metal Gate High K Interactions by Backside XPS and C-AFM.

Wilfried Vandervorst 1 2 , Umberto Celano 1 , Thierry Conard 1 , Thomas Hantschel 1
1 mca, imec, leuven Belgium, 2 IKS, KULeuven, leuven Belgium

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4:45 PM - P7.7
Interfacial Reaction Induced GeO Desorption, GeO2 Crystallization and Non-uniform Void Formation in GeO2/Ge Stack.

Shengkai Wang 1 , Koji Kita 1 2 , Tomonori Nishimura 1 2 , Kosuke Nagashio 1 2 , Akira Toriumi 1 2
1 Department of Materials Engineering, The University of Tokyo, Tokyo Japan, 2 , JST-CREST, Tokyo Japan

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5:00 PM - P7.8
Direct Measurement of Inversion Charge Density in Enhancement-mode GaAs and InP Field-effect Transistors with Al2O3 Gate Dielectric Using Gated-hall-Bar Structures.

Davood Shahrjerdi 1 , Bahman Hekmatshoar 2 , Junghyo Nah 1 , Emanuel Tutuc 1 , Sanjay Banerjee 1
1 Electrical and Computer Engineering, University of Texas at Austin, Austin, Texas, United States, 2 Electrical Engineering, Princeton University , Princeton, New Jersey, United States

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5:15 PM - P7.9
Ultra-thin III-V on Insulator (XOI) Layers for High-performance and Low-power Transistors.

Rehan Kapadia 1 , Kuniharu Takei 1 , Hyunhyub Ko 1 , Steven Chuang 1 , Hui Fang 1 , Paul Leu 1 , Kartik Ganapathi 1 , Elena Plis 2 , Ha Sul Kim 1 , Szu-Ying Chen 3 , Morten Madsen 1 , Alexandra Ford 1 , Yu-Lun Chueh 3 , Sayeef Salahuddin 1 , Sanjay Krishna 2 , Ali Javey 1
1 Electrical Engineering, University of California Berkeley, Berkeley, California, United States, 2 Center for High Technology Materials, University of New Mexico, Albuquerque, New Mexico, United States, 3 Material Science and Engineering, National Tsing Hua University, Hsinchu Taiwan

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5:30 PM - P7.10
Wafer Bonded Ge-Si Heterostructure for Avalanche Photodiode Application.

Ki Yeol Byun 1 , John Hayes 1 , Farzan Gity 1 , Brian Corbett 1 , Cindy Colinge 1
1 , Tyndall National Institute, Cork, na, Ireland

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5:45 PM - P7.11
Effect of Interface Defects and Record High Peak Tunnel Current Density in Si-based Tunnel Diodes Grown by RTCVD.

Jiun-Yun Li 1 2 , James Sturm 1 2 , Isaac Lauer 3 , Steve Koester 3 4
1 Electrical Engineering, Princeton University, Princeton, New Jersey, United States, 2 Princenton Institute for the Science and Technology of Materials, Princeton University, Princeton, New Jersey, United States, 3 T.J. Watson Research Center, IBM, Yorktown Heights, New York, United States, 4 Electrical and Computer Engineering, University of Minnesota, Minneapolis, Minnesota, United States

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