Meetings & Events

 

Spring 2011 Logo2011 MRS Spring Meeting & Exhibit

April 25-29, 2011 | San Francisco
Meeting Chairs: Ping Chen, Chang Beom-Eom, Samuel S. Mao, Ryan O'Hayre

Symposium Q : New Functional Materials and Emerging Device Architectures for Nonvolatile Memories

2011-04-26   Show All Abstracts

Symposium Organizers

Orlando Auciello Argonne National Laboratory
Panagiotis Dimitrakis Institute of Microelectronics
Yoshihisa Fujisaki Hitachi Ltd.
Eisuke Tokumitsu Tokyo Institute of Technology
Dirk Wouters IMEC

Symposium Support

Annealsys
Applied Materials Inc
M. Watanabe &
Co. Ltd
Park Systems Corporation
Universal Systems Co., Ltd
Q1: Advanced Flash and Nano-Floating Gate Memories
Session Chairs
Panagiotis Dimitrakis
Kirk Prall
Tuesday AM, April 26, 2011
Room 3002 (Moscone West)

9:30 AM - **Q1.1
Scaling Challenges for NAND and Replacement Memory Technology.

Kirk Prall 1
1 , Micron Technology, Boise, Idaho, United States

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10:00 AM - Q1.2
Effect of Hydrogen on Charge Trapping Behavior of Metal-oxide-nitride-oxide-silicon Nonvolatile Memory Devices.

Nam Nguyen 1 , Gang He 1 , Markus Wilde 2 , Ziyuan Liu 3 , Toyohiro Chikyow 1
1 , National Institute for Materials Science, Tsukuba, Ibaraki, Japan, 2 Institute of Industrial Science, University of Tokyo, Tokyo Japan, 3 , NEC Electronics Corporation, Kawasaki, Kanagawa, Japan

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10:15 AM - Q1.3
Investigation of SiO2/HfO2 Stacks for Flash Memory Applications.

Bhaswar Chakrabarti 1 , Heesoo Kang 3 , Adam Pirkle 1 , Barry Brennan 1 , Stephen Mcdonnell 1 , Nhan Nguyen 4 , Robert Wallace 1 2 , Eric Vogel 1 2
1 Materials Science and Engineering, University of Texas at Dallas, Richardson, Texas, United States, 3 Flash Core Technology Lab, Samsung Electronics Co. Ltd., Hwasung City, Gyonggi-Do, Korea (the Republic of), 4 , National Institute of Standards and Technology, Gaithersburg, Maryland, United States, 2 Electrical Engineering, University of Texas at Dallas, Richardson, Texas, United States

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10:30 AM - *
Break

11:00 AM - Q1.4
Growth and In-line Characterization of Silicon Nanodots Integrated in Discrete Charge Trapping Non-volatiles Memories.

Julien Amouroux 1 2 3 , Vincenzo Della Marca 1 2 3 , Philippe Boivin 1 , Philippe Maillot 1 , Christophe Muller 2 , Damien Deleruyelle 2 , Eric Jalaguier 3 , Jean-Philippe Colonna 3
1 R&D, STMicroelectronics, Rousset CEDEX France, 2 , Institut Matériaux Microélectronique Nanosciences de Provence, UMR CNRS 6242, Marseille France, 3 , CEA / LETI MINATEC, Grenoble France

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11:15 AM - Q1.5
Immersion-plated Gold Nanocrystal Embedded in LaxO1-x for Nonvolatile Memory.

Che-Wei Chen 1 , Chun-Hu Cheng 1 , Hung-Chung Yu 1 , Gia-Yeh Huang 2 , Nian-Huei Chen 1 , Albert Chin 3 , Fon-Shan Huang 1
1 Institute of Electronics Engineering, National Tsing Hua University, Hsinchu Taiwan, 2 Department of Power Mechanical Engineering, National Tsing Hua University, Hsinchu Taiwan, 3 Department of Electronics Engineering, National Chiao Tung University, Hsinchu Taiwan

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11:30 AM - Q1.6
MOCVD Al0.39O0.6 N0.01/Al-rich Al0.4O0.45N0.15/Al0.4O0.4N0.2 with High Density Aluminum Nanocrystal for Nonvolatile Memory.

Nian-Huei Chen 1 , Hung-Chung Yu 1 , Gia-Yeh Huang 2 , Fon-Shan Huang 1
1 Institute of Electronics Engineering, National Tsing Hua University, Hsinchu Taiwan, 2 Department of Power Mechanical Engineering, National Tsing Hua University, Hsinchu Taiwan

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11:45 AM - Q1.7
Matrix Density Effect on Morphology of Germanium Nanocrystals Embedded In Silicon Dioxide Thin Films.

Arif Alagoz 1 2 , Mustafa Genisel 3 4 , Sean Foss 5 , Terje Finstad 5 , Rasit Turan 2
1 Applied Science, University of Arkansas at Little Rock, Little Rock, Arkansas, United States, 2 Physics, Middle East Technical University, Ankara Turkey, 3 Chemistry, Middle East Technical University, Ankara Turkey, 4 Chemistry, Bilkent University, Ankara Turkey, 5 Physics, University of Oslo, Oslo Norway

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12:00 PM - Q1.8
Temperature Effect on Charge Transportation Mechanism of Nanocrystals Embedded High-k Nonvolatile Memory Devices.

Chia-Han Yang 1 2 , Yue Kuo 1 , Chen-Han Lin 1 , Way Kuo 3
1 Thin Film Nano & Microelectronics Research Lab, Texas A&M University, College Station , Texas, United States, 2 Department of Industrial and Information Engineering, University of Tennessee, Knoxville, Tennessee, United States, 3 , City University of Hong Kong, Hong Kong Hong Kong

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12:15 PM - Q1.9
Ordered Arrays of Silicon Nanocrystals by Block Copolymer Lithography.

Michele Perego 1 , Gabriele Seguini 1 , Andrea Andreozzi 1 , Emanuele Poliani 1 , Gerard BenAssayag 2 , Sylvie Schamm-Chardon 2 , Paolo Pellegrino 3
1 , Laboratorio MDM, IMM-CNR, Agrate Brianza Italy, 2 , CEMES-CNRS and Univ. de Toulouse, nMat grou, Toulouse France, 3 , University of Barcelona, Barcelona Spain

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12:30 PM - Q1.10
Permittivity and Band Gap Enhancement by Doping Optimization for Charge Trap Memory Blocking Oxides.

Junko Nakatsuru 1 , Naomu Kitano 1 , Takashi Nakagawa 1 , Toru Tatsumi 1 , Jimmy Price 2 , David Glimer 2
1 , Canon ANELVA, Kawasaki Japan, 2 , SEMATECH, Austin, Texas, United States

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12:45 PM - Q1.11
Simulation and Experiment of Core Shell Nanocrystal Nonvolatile Memory.

Huimei Zhou 1 , Jianlin Liu 1
1 Dept of Electrical Engineering, UC Riverside, Riverside, California, United States

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Q2: Ferroelectric Memories
Session Chairs
Orlando Auciello
Ted Moise
Tuesday PM, April 26, 2011
Room 3002 (Moscone West)

2:30 PM - **Q2.1
Embedded Ferroelectric Random-Access Memory – Technology and Applications.

Ted Moise 1
1 Analog Technology Development, Texas Instruments, Dallas, Texas, United States

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3:00 PM - **Q2.2
Recent Progress in Downsizing FeFETs for Fe-NAND Application.

Shigeki Sakai 1 , Mitsue Takahashi 1 , Van Hai Le 1
1 , National Institute of Advanced Industrial Science and Technology, Tsukuba Japan

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3:30 PM - **Q2.3
Passive Matrix Non-volatile Ferroelectric Polymer Memory: The Keys to Making it Work.

Nicklas Johansson 1 , Christer Karlsson 1 , Per Bröms 1 , OlleJonny Hagel 1 , Anders Hägerström 1 , Grzegorz Greczynski 2
1 , Thin Film Electronics, Linköping Sweden, 2 Department of Physics, Linköping University, Linköping Sweden

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4:00 PM - *
Break

4:30 PM - **Q2.4
Nanoscale Studies of Ferroelectric Domains for Future Non-volatile Memories.

Seungbum Hong 1 , Orlando Auciello 1 2 , Leo Ocola 2 , Ramesh Nath 1 3 , Moonkyu Park 1 4 , Jeffrey Klug 1 , Mengchun Pan 1 5 , Martin Holt 2 , Alexandra Joshi-Imre 2 , Kwangsoo No 4 , Ram Katiyar 3 , Amanda Petford-Long 2
1 Materials Science Division, Argonne National Laboratory, Lemont, Illinois, United States, 2 Center for Nanoscale Materials, Argonne National Laboratory, Lemont, Illinois, United States, 3 Institute of Functional Materials, University of Puerto Rico , San Juan , Puerto Rico, United States, 4 Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology, Daejon Korea (the Republic of), 5 Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois, United States

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5:00 PM - Q2.5
Lanthanum Oxide Capping Layer for Solution-processed Ferroelectric-gate Thin-film Transistors.

Phan Trong Tue 1 , Trinh Bui Nguyen 2 , Takaaki Miyasako 2 , Thanh Pham 1 , Eisuke Tokumitsu 3 2 , Tatsuya Shimoda 1 2
1 School of Materials Science, Japan Advanced Institute of Science and Technology, Nomi, Ishikawa, Japan, 2 ERATO, Shimoda Nano-Liquid Process Project, Japan Science and Technology Agency, Nomi, Ishikawa, Japan, 3 Precision and Intelligence Laboratory, Tokyo Institute of Technology, Tokyo Japan

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5:15 PM - Q2.6
Nanoscale Resolved Growth Dynamics During Switching in Memory Materials.

Nicholoas Polomoff 1 , Atif Rakin 1 , Sungjun Lee 2 , Joseph Desmarais 1 , Catherine Czaja 1 , Bryan Huey 1
1 Institute of Materials Science, University of Connecticut, Storrs, Connecticut, United States, 2 Division of Physical Metallurgy, Korea Research Institute of Standards and Science, Daejeon Korea (the Republic of)

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5:30 PM - Q2.7
3-D BaTiO3-MWNT Nanoscale Capacitors by a Novel Deposition Technique.

Sai Shivareddy 1 , Youngjin Choi 1 , Gehan Amaratunga 1
1 Engineering , University of Cambridge, Cambridge United Kingdom

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5:45 PM - Q2.8
Flexible Ferroelectric(PZT) Thin Film Capacitor on Plastic Substrate.

Jonghyun Rho 1 , Sang Jin Kim 3 , Wook Heo 1 , Nae-Eung Lee 1 , Hwan-Soo Lee 3 , Jong-Hyun Ahn 1 2
1 Advanced Materials Science and Engineering,Center for Human Interface Nanotechnology, Sungkyunkwan Univ., Suwon, Gyeonggi, Korea (the Republic of), 3 Advanced Materials Laboratory, Samsung Electro-Mechanics, Suwon, Gyeonggy, Korea (the Republic of), 2 SKKU Advanced Institute of Nanotechnology, Sungkyunkwan Univ., Suwon, Gyeonggy, Korea (the Republic of)

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2011-04-27   Show All Abstracts

Symposium Organizers

Orlando Auciello Argonne National Laboratory
Panagiotis Dimitrakis Institute of Microelectronics
Yoshihisa Fujisaki Hitachi Ltd.
Eisuke Tokumitsu Tokyo Institute of Technology
Dirk Wouters IMEC

Symposium Support

Annealsys
Applied Materials Inc
M. Watanabe &
Co. Ltd
Park Systems Corporation
Universal Systems Co., Ltd
Q6: Poster Session: Emerging Non-Volatile Memories
Session Chairs
Panagiotis Dimitrakis
Eisuke Tokumitsu
Wednesday PM, April 27, 2011
Salons 7-9 (Marriott)

1:00 AM -
Q6.5 transferred to Q2.8

9:00 PM - Q6.1
Charge-trapping Memory Devices with Oxide Nanocrystals Precipitated from High-k Dielectric Films.

Jiang Yin 1
1 Dept. of Phys./National Laboratory of Solid State Microstructures, Nanjing University, Nanjing, Jiangsu, China

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9:00 PM - Q6.10
A Study on the Growth and Annealing Characterization of Mutiferroic ZnO : Ti Films.

Youngmin Lee 1 , Han Tae Ryu 1 , Sejoon Lee 2 , Jin Young Lee 1 , Deuk Young Kim 1
1 Semiconductor Science, Dongguk university, Seoul Korea (the Republic of), 2 Quantum-functional Semiconductor Research Center, Dongguk University, Seoul Korea (the Republic of)

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9:00 PM - Q6.11
Transition Metal-Doped Transparent Conducting Oxides as Promising Building Blocks for Spintronic Materials.

Shokouh Sadat Farvid 1 , Pavle Radovanovic 1
1 Department of Chemistry, University of Waterloo, Waterloo, Ontario, Canada

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9:00 PM - Q6.12
Electro-forming and Resistance Switching of Vacancy-doped Metal-SrTiO3-metal Structures.

Florian Hanzig 1 , Juliane Seibt 1 , Hartmut Stoecker 1 , Barbara Abendroth 1 , Dirk Meyer 1
1 Institute of Experimental Physics, TU Bergakademie Freiberg, Freiberg Germany

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9:00 PM - Q6.13
Electroforming Process in Metal-oxide-polymer Resistive Switching Memories.

Qian Chen 1 , Henrique Gomes 1 , Dago Leeuw 2 , Stefan Meskers 3
1 Electronics and Telecommunication, CEOT, University of Algarve, Faro Portugal, 2 Philips Research Labs, High Tech. Campus, Eindhoven Netherlands, 3 Molecular Materials and Nanosystems, Eindhoven University of Technology, Eindhoven Netherlands

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9:00 PM - Q6.14
Memory Characteristics of ZnO Thin Film Transistor with SiNx Charge Storage for Nonvolatile Memory.

Eunkyeom Kim 1 , Young Ill Kim 2 , Jack You Jung 2 , K. Lee 3 , D. Kim 3 , G. Parsons 3 , Kyoungwan Park 1 2
1 Nano engineering, Unversity of Seoul, Seoul Korea (the Republic of), 2 Nano Science & Technology, University of Seoul, Seoul Korea (the Republic of), 3 Chemical & Biomolecular Engineering, North Carolina State University, Raleigh NC , North Carolina, United States

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9:00 PM - Q6.15
Nonvolatile and Programmable Nanowire Circuits for Nanoprocessors.

Hwan Sung Choe 1 , Hao Yan 2 , SungWoo Nam 3 , Yongjie Hu 2 , Shamik Das 4 , James Klemic 4 , James Ellenbogen 4 , Charles Lieber 2 3
1 Physics, Harvard University, Cambridge, Massachusetts, United States, 2 Chemistry and Chemical Biology, Harvard University, Cambridge, Massachusetts, United States, 3 School of Engineering and Applied Sciences, Harvard University, Cambridge, Massachusetts, United States, 4 Nanosystems Group, The MITRE Corporation, McLean, Virginia, United States

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9:00 PM - Q6.16
Rigid-flexible Multi-block Polymers Consisting of Alternating Oligoaniline and Alkane Segments and Their Gold Nanocomposites for Organic Memory Devices.

Taek-Gyoung Kim 1 2 , You-Jin Yim 1 2 , Bo-Hee Park 1 2 , Ji-Woong Park 1 2
1 School of Materials Science and Engineering, Gwangju Institute of Science and Technology (GIST), Gwangju Korea (the Republic of), 2 , Program for Integrated Molecular Systems (PIMS), Gwangju Korea (the Republic of)

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9:00 PM - Q6.17
Write-once-read-many-times Memory Fabricated with ZnO/MgO/Si Heterojunction for Long-time Archival Storage.

Jing Qi 1 , Jian Huang 1 , Qing Zhang 1 , Jingjian Ren 1 , Jianze Zhao 1 , Jianlin Liu 1
1 Department of Electrical Engineering, Quantum Structures Laboratory, University of California, Riverside, Riverside, California, United States

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9:00 PM - Q6.18
Highly Manufactuable Device Isolation Technology using LEG (Laser-induced Epitaxial Growth) Process for Monolithic Stack Devices.

Yong-Hoon Son 1 2 , Euijoon Yoon 2
1 Process Development, Samsung electronics, Hwasung-si Korea (the Republic of), 2 Materials Science and Engineering, Seoul National University, Seoul Korea (the Republic of)

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9:00 PM - Q6.2
Study of Oxide Substrate Surface Morphology Effect on Silicon Quantum Dot Growth.

Jingjian Ren 1 , Jianlin Liu 1
1 EE, UC,Riverside, Riverside, California, United States

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9:00 PM - Q6.3
Enhancement of Nonvolatile Floating Gate Memory Devices Containing AgInSbTe-SiO2 Nanocomposite by Inserting HfO2/SiO2 Blocking Oxide Layer.

Kuo-Chang Chiang 1 , Tsung-Eong Hsieh 1
1 Materials Science and Engineering, National Chiao Tung University, Hsinchu Taiwan

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9:00 PM - Q6.4
Fabricating ZnO Thin Film Transistor-memory with Au Nanocrystals Embedded in High-k MgO Dielectric.

Wei-Yu Chen 1 , Jen-Sue Chen 1
1 Department of Materials Science and Engineering, National Cheng Kung University, Tainan City Taiwan

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9:00 PM - Q6.7
Doping GaN Nanowires with Mn for Magnetic Applications.

Gary Harris 1
1 HNF, Howard University, Washington, District of Columbia, United States

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9:00 PM - Q6.8
Magnetic Properties of Chromium and Cobalt Doped Indium Oxide Dilute Magnetic Ssemiconductors.

K. Ghosh 1 , M. Langhoff 1 , E. Nahlik 1 , A. Ghosh 1 , N. Ukah 1 , Ram Gupta 1 , Y. Kolekar 1 2 , P. Kahol 1
1 Physics, Astronomy and Materials Science, Missouri State University, Springfield, Missouri, United States, 2 Physics, Pune University, Pune India

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9:00 PM - Q6.9
Manipulation and Study of Mass Selected Magnetic Nanoparticles from a Magnetron Sputter Gas Aggregation Source.

Mukhles Sowwan 1 2 , Jean Bobo 1 3 , Chia Chung 1 , James Groves 1 , Bruce Clemens 1
1 Materials Science and Engineering, Stanford, Stanford, California, United States, 2 Materials Engineering, Al-QudsUniversity, Jerusalem Palestine, State of, 3 CEMES-CNRS, CNRS, Toulouse France

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2011-04-28   Show All Abstracts

Symposium Organizers

Orlando Auciello Argonne National Laboratory
Panagiotis Dimitrakis Institute of Microelectronics
Yoshihisa Fujisaki Hitachi Ltd.
Eisuke Tokumitsu Tokyo Institute of Technology
Dirk Wouters IMEC

Symposium Support

Annealsys
Applied Materials Inc
M. Watanabe &
Co. Ltd
Park Systems Corporation
Universal Systems Co., Ltd
Q9: Poster Session: Resistive Switch Memories III
Session Chairs
Rainer Bruchhaus
Dirk Wouters
Thursday PM, April 28, 2011
Salons 7-9 (Marriott)

1:00 AM -
Q9.9 Transferred to Q10.9

Q7: Resistive Switch Memories I
Session Chairs
Yoshihisa Fujisaki
Rainer Waser
Thursday AM, April 28, 2011
Room 3002 (Moscone West)

9:30 AM - Q7.1
Ab Initio Study of Copper in Silicon Dioxide.

Martin Zeleny 1 , Jozsef Hegedus 1 , Adam Foster 2 , David Drabold 3 , Stephen Elliott 4 , Risto Nieminen 1
1 Department of Applied Physics, Aalto University, Espoo Finland, 2 Department of Physics, Tampere University of Technology (TUT), Tampere Finland, 3 Department of Physics and Astronomy, Ohio University, Athens, Ohio, United States, 4 Department of Chemistry, University of Cambridge, Cambridge United Kingdom

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9:45 AM - Q7.2
Complementary Resistive Switches (CRS): High Speed Performance for Passive Nanocrossbar Arrays.

Roland Rosezin 1 , Eike Linn 2 , Lutz Nielen 2 , Carsten Kuegeler 1 , Rainer Bruchhaus 1 , Rainer Waser 1 2
1 Institut fuer Festkoerperforschung, Forschungszentrum Juelich GmbH, Juelich Germany, 2 Institut fuer Werkstoffe der Elektrotechnik 2, RWTH Aachen University, Aachen Germany

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10:00 AM - Q7.3
Influence of Copper on the Switching Properties of Hafnium Oxide-based Resistive Memory.

Benjamin Briggs 1 , Seann Bishop 1 , Kevin Leedy 2 , Richard Moore 1 , Steven Novak 1 , Nathaniel Cady 1
1 College of Nanoscale Science and Engineering, SUNY Albany, Albany, New York, United States, 2 AFRL/RYDD, Air Force Research Laboratory, Wright patterson AFB, Ohio, United States

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10:15 AM - Q7.4
Fabrication and Characterization of Copper Oxide Resistive Memory Devices.

Seann Bishop 1 , Benjamin Briggs 1 , Sree Addepalli 1 , Nathaniel Cady 1
1 College of Nanoscale Science and Engineering, University at Albany, Albany, New York, United States

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10:30 AM - Q7.5
Comparative Study of Doping Effect on Reverse-bias-modulated Bipolar Resistance Switching in Transition-metal Doped ZnO.

Tom Wu 1
1 , Nanyang Technological University, Singapore Singapore

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10:45 AM - Q7.6
In-situ TEM Analysis of Conductive Filament in a Solid Electrolyte Resistance RAM.

Takashi Fujii 1 , Masashi Arita 1 , Yasuo Takahashi 1 , Ichiro Fujiwara 2
1 Graduate School of Information science and Technology, Hokkaido University, Sapporo, Hokkaido, Japan, 2 , Semiconductor Technology Academic Research Center, Yokohama Japan

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11:00 AM - *
Break

11:30 AM - Q7.7
Understanding of Resistive Switching of Unipolar NiO-based RRAM.

Hyung Dong Lee 1 , Blanka Magyari-Koepe 1 , Kwanghee Cho 1 2 , Yoshio Nishi 1
1 Electrical Engineering, Stanford University, Stanford, California, United States, 2 NtI, hynix, Icheon, Kyunggi, Korea (the Republic of)

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11:45 AM - Q7.8
Reduction in Reset Current of Unipolar NiO-based Resistive Switching through Nickel Interfacial Layer.

Hyung Dong Lee 1 , Seung Wook Ryu 1 , Blanka Magyari-Koepe 1 , Kwanghee Cho 1 2 , Yoshio Nishi 1
1 Electrical Engineering, Stanford University, Stanford, California, United States, 2 Nt&I, hynix, Icheon Korea (the Republic of)

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12:00 PM - Q7.9
Influence of Process Parameters on Low-current Resistive Switching in MOCVD and ALD NiO Films.

Xin Peng Wang 1 , Dirk Wouters 1 3 , Michael Toeller 2 , Johan Meersschaut 1 , Ludovic Goux 1 , YangYin Chen 3 , Bogdan Govoreanu 1 , Luigi Pantisano 1 , Robin Degraeve 1 , Malgorzata Jurczak 1 , Laith Altimime 1 , Jorge Kittl 1
1 , imec, Leuven Belgium, 3 Electrical Engineering, Katholieke Universiteit Leuven, Leuven Belgium, 2 , Tokyo Electron Limited, Tokyo Japan

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12:15 PM - Q7.10
Bipolar Resistive Switching Characteristics of NiO Thin Film Grown on TiN Substrate Using Radio Frequency Magnetron Sputtering.

Tae Geun Seong 1 , Mi-Ri Joung 2 , Jong-Woo Sun 2 , Ji-Won Moon 3 , Jae-Sung Roh 3 , Sahn Nahm 1 2
1 Department of Nano-semiconductor, Korea university, Seoul Korea (the Republic of), 2 Department of Materials Science and Engineering, Korea University, Seoul Korea (the Republic of), 3 R&D Div. New memory process part, Hynix Semiconductor Inc., Icheon-si, Kyoungki-do, Korea (the Republic of)

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12:30 PM - Q7.11
Resistive Switching in Core-shell Ni-NiO Nanowires for Crossbar Memory Arrays.

Carlo Cagli 1 , Bruce Harteneck 2 , Federico Nardi 1 , Zhongkui Tan 2 , Yuegang Zhang 2 , Daniele Ielmini 1
1 , Politecnico di Milano, Milano Italy, 2 , Lawrence Berkeley National Lab, Berkeley, California, United States

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12:45 PM - Q7.12
The Resistive Switching Characteristics of Pt-NiO-Au Segmented Nanowires Synthesized by Electrochemical Deposition.

Sae-eun Lee 1 , Dong-uk Kim 1 , Dong Hyeok Lim 2 , Dong Hyuk Shin 3 , Bongyoung Yoo 1 3
1 Department of Bionanotechnology, Hanyang University, Ansan Korea (the Republic of), 2 Institute of Physics and Applied , Yonsei University, Seoul Korea (the Republic of), 3 Department of materials science and engineering, Hanyang University, Ansan Korea (the Republic of)

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Q9: Poster Session: Resistive Switch Memories III
Session Chairs
Rainer Bruchhaus
Dirk Wouters
Thursday PM, April 28, 2011
Salons 7-9 (Marriott)

9:00 PM - Q9.1
Oxygen Migration at Pt or Cu/HfO2 Interface under Bias Operation: Oxide Based ReRAM Application.

Takahiro Nagata 1 , Masamitsu Haemori 1 , Yoshiyuki Yamashita 1 2 , Hideki Yoshikawa 2 , Keisuke Kobayashi 2 , Yuta Iwashita 1 , Toyohiro Chikyow 1
1 Advanced Electric Materials Center, National Institute for Materials Science, Tsukuba Japan, 2 NIMS Beamline Station at SPring-8, National Institute for Materials Science, Hyogo Japan

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9:00 PM - Q9.10
Oxygen-content-dependent Unipolar Resistive-switching Memories of Nonstoichometric TiOx Thin Films.

Jae Hee Park 1 , Keun Yong Lim 1 , Min Choul Kim 1 , Suk-Ho Choi 1
1 Department of Applied Physics, Kyung Hee University, Yongin, Kyungkido, Korea (the Republic of)

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9:00 PM - Q9.11
A Survey of Metal Oxides and Top Electrodes for Resistive Memory Devices.

Seann Bishop 1 , Benjamin Briggs 1 , Kevin Leedy 2 , Sree Addepalli 1 , Nathaniel Cady 1
1 College of Nanoscale Science and Engineering, University at Albany, Albany, New York, United States, 2 AFRL/RYDD, Air Force Research Laboratory, Wright Patterson AFB, Ohio, United States

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9:00 PM - Q9.12
Complementary Resistive Switching for Diode Free Cell Array with TiO2-x Multi Layers.

Yoon Cheol Bae 1 2 , Ah Rahm Lee 1 2 , June Sik Kwak 2 , Jin Pyo Hong 1 2
1 Division of Nano-Scale Semiconductor Engineering, Hanyang University, Seoul Korea (the Republic of), 2 Novel Functional Materials and Devices Lab, Hanyang University, Seoul Korea (the Republic of)

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9:00 PM - Q9.13
Effect of NiO Growth Conditions on the Bipolar Resistance Memory Switching of Pt/NiO/SRO Structure.

Chunli Liu 1 , Chang Uk Jung 1 , Fran Kurnia 1 , ShinBum Lee 2 , SangMo Yang 2 , CheolSeong Hwang 2
1 Physics, Hankuk University of Foreign Studies, Yongin,, Kyounggi-Do, Korea (the Republic of), 2 Department of Physics, Seoul National University, Seoul, Seoul, Korea (the Republic of)

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9:00 PM - Q9.15
Forming-free Resistive Switching Characteristics in La2O3 doped HfO2 Thin Films.

Chin Shiang Peng 1 , Su-Jien Lin 1
1 , National Tsing Hua University, Hsinchu Taiwan

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9:00 PM - Q9.16
Resistive Switching and Electrochromic Multi-level Memory Device.

Wei-Ting Wu 1 , Jen-Sue Chen 1 , Jih-Jen Wu 2
1 Department of Materials Science and Engineering, National Cheng Kung University, Tainan Taiwan, 2 Department of Chemical Engineering, National Cheng Kung University, Tainan Taiwan

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9:00 PM - Q9.17
Switching and Memory Effects in Metal-intrinsic Oxide-InSe Structures.

S. Drapak 1
1 , Frantsevich Institute of Material Sciences Problems, National Academy of Sciences of Ukraine, Chernivtsi Ukraine

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9:00 PM - Q9.18
A Three Layer Nano-ionic Conductive Bridge Memristor Experiment Using One Mask.

Steve Wald 1 , Muhammad Rizwanlatif 1 , Nader Rafla 1 , Maria Mitkova 1
1 College of Engineering, Boise State University, Boise, Idaho, United States

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9:00 PM - Q9.2
Effect of Doping Concentration on Resistive-switching-memory Performance of Cu-doped ZnO Films.

Keun Yong Lim 1 , Min Choul Kim 1 , Chang Oh Kim 1 , Suk-Ho Choi 1
1 Department of Applied Physics, Kyung Hee University, Yongin, Kyungkido, Korea (the Republic of)

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9:00 PM - Q9.3
The Electrolytic Resistive Switching in Both Amorphous and Crystalline Ag10Ge15Te75 Films.

Zhiguo Liu 1 2
1 National Laboratory of Solid State Microstructures, Nanjing University, Nanjing China, 2 Department of Materials Science and Engineering, Nanjing University, Nanjing China

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9:00 PM - Q9.4
Bipolar Resistive Switching Characteristics in Ag/ZnO/Pt Schottky Diodes.

Zi-Jheng Liu 1 , Jyun-Yi Wu 1 , Jon-Yiew Gan 1 , Su-Jien Lin 1 , Tai-Bor Wu 1
1 Department of Materials Science and Engineering, National Tsing-Hua University, Hsinchu Taiwan

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9:00 PM - Q9.5
Nonvolatile Resistance Switching in Ruthenium Doped Zinc Oxides.

Shih Ming Lin 1
1 , National Tsing Hua University, Hsinchu Taiwan

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9:00 PM - Q9.6
Improved Resistive Switching Characteristics in ZnO Thin Films by Ti Doping.

Zhenguo Ji 1 , Qinan Mao 1 2
1 College of Materials and Environmental Engineering , Hangzhou Dianzi University, Hangzhou, Zhejiang, China, 2 Department of Materials Science and Engineering, Zhejiang University, Hangzhou, Zhejiang, China

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9:00 PM - Q9.7
Resistive Switching Characteristics of ZnO Thin Films Fabricated by Atomic Layer Deposition Process.

Kuan-Yu Chou 1 , Hsin-Wei Huang 1 , Tai-Bor Wu 1 , Su-Jien Lin 1
1 Department of Material Science and Engineering, National Tsing-Hua University, Hsinchu Taiwan

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9:00 PM - Q9.8
Transparent Resistive Random Access Memory Based on Homojunction and Heterojuction Stacked Structures.

Chan-Yu Tseng 1 , Su-Jien Lin 1
1 , National Tsing Hua University, Hsinchu Taiwan

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2011-04-29   Show All Abstracts

Symposium Organizers

Orlando Auciello Argonne National Laboratory
Panagiotis Dimitrakis Institute of Microelectronics
Yoshihisa Fujisaki Hitachi Ltd.
Eisuke Tokumitsu Tokyo Institute of Technology
Dirk Wouters IMEC

Symposium Support

Annealsys
Applied Materials Inc
M. Watanabe &
Co. Ltd
Park Systems Corporation
Universal Systems Co., Ltd
Q10: Resistive Switch Memories IV
Session Chairs
Carlos Araujo
Orlando Auciello
Friday AM, April 29, 2011
Room 3002 (Moscone West)

9:30 AM - **Q10.1
Materials and Device Optimization for Nanoscale Resistive Random Access Memories (ReRAMs) Based on the New Anderson-Mott Correlated Electron RAM (CeRAM) Device Paradigm Concept.

Carlos Paz de Araujo 1 2 , Jolanta Celinska 2 , Xue Kanhao 2 , Chris McWilliams 2 , Dave Czaplewski 3 , Wei Li 4 , Orlando Auciello 3 4
1 , University of Colorado at Colorado Springs, Colorado Springs, Colorado, United States, 2 , Symetrix Corporation, Colorado Springs, Colorado, United States, 3 Center for Nanoscale Materials, Argonne National Laboratory, Argonne, Illinois, United States, 4 Materials Science Division, Argonne National Laboratory, Argonne, Illinois, United States

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10:00 AM - Q10.2
Electronic Resistance Switching in Si-based RRAM Devices: The Nanometallicity Concept.

Albert Chen 1 , Byung Joon Choi 1 , Xiang Yang 1 , Soogil Kim 1 , I-Wei Chen 1
1 Materials Science and Engineering, University of Pennsylvania, Philadelphia, Pennsylvania, United States

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10:15 AM - Q10.3
Feasibility of a Purely Electronic-switching Memory in SiO2 Thin Films with Dispersed Pt: A Device Viewpoint.

Byungjoon Choi 1 , Albert Chen 1 , Xiang Yang 1 , Soogil Kim 1 , I-Wei Chen 1
1 Materials Science & Engineering, University of Pennsylvania, Philadelphia, Pennsylvania, United States

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10:30 AM - Q10.4
Resistive Switching Characteristics of Maghemite Nanoparticle Assembly.

Tae-sik Yoon 1 , Quanli Hu 1 , Sung Mok Jung 2 , Hyun Ho Lee 2
1 Department of Nano Science and Engineering, Myongji University, Yongin, Gyeonggi-do, Korea (the Republic of), 2 Department of Chemical Engineering, Myongji University, Yongin, Gyeonggi-do, Korea (the Republic of)

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10:45 AM - Q10.5
Planar Non-volatile Memory based on Metal Nanoparticles.

Asal Kiazadeh 1 , Henrique Gomes 1 , Ana Da costa 1 , Jose Moreira 1 , Dago De Leeuw 1 , Dago De Leeuw 1 , Stephen Meskers 1
1 Center of Electronics Optoelectronics and Telecommunications (CEOT), University of Algarve , Gambelas, Algarve, Portugal

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11:00 AM - *
Break

11:30 AM - Q10.6
Resistive Random Access Memories (RRAMS) Based on Metal-oxide Polymer Structures: Switching Dynamics.

Paulo Rocha 1 , Henrique Gomes 1 , Dago Leeuw 2 , Stefan Meskers 3
1 Center of Electronics Optoelectronics and Telecommunications, Universidade do Algarve, Faro Portugal, 2 Research Labs, Philips, Eindhoven Netherlands, 3 Molecular Materials and Nanosystems, Eindhoven University of Technology, Eindhoven Netherlands

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11:45 AM - Q10.7
Retentivity of RRAM Devices Based on Metal / YBCO Interfaces.

Carlos Acha 1 2 , Alejandro Schulman 1 2
1 Physics, University of Buenos Aires, Buenos Aires Argentina, 2 , IFIBA (CONICET), Buenos Aires Argentina

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12:00 PM - Q10.8
Direct Imaging of Microstructural and Electronic Changes during Resistive Switching in PrCaMnO via In-situ Transmission Alectron Microscopy.

Stephanie Raabe 1 , Jonas Norpoth 1 , Malte Scherff 1 , Bjoern-Uwe Meyer 1 , Joerg Hoffmann 1 , Dong Su 2 , Lijun Wu 2 , Yimei Zhu 2 , Christian Jooss 1
1 Institute of Materials Physics, University of Goettingen, Goettingen Germany, 2 Dept. of Condensed Matter Physics and Materials Science, Brookhaven National Laboratory, Upton , New York, United States

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