Meetings & Events

 

Spring 2011 Logo2011 MRS Spring Meeting & Exhibit

April 25-29, 2011 | San Francisco
Meeting Chairs: Ping Chen, Chang Beom-Eom, Samuel S. Mao, Ryan O'Hayre

Symposium R : Phase-Change Materials for Memory and Reconfigurable Electronics Applications

2011-04-27   Show All Abstracts

Symposium Organizers

Byung-ki Cheong Korea Institute of Science and Technology
Paul Fons National Institute for Advanced Industrial Science and Technology
BartJ. Kooi University of Groningen
Bong-sub Lee Tessera Inc.
Rong Zhao Data Storage Institute
R4/Q3: Joint Session: Phase Change Memories
Session Chairs
Byung-ki Cheong
Yoshihisa Fujisaki
Wednesday AM, April 27, 2011
Room 3002 (Moscone West)

9:00 AM - **R4.1/Q3.1
Status of Advanced Non-Volatile Memory Technology Development.

Roberto Bez 1 , Andrea Redaelli 1
1 , Numonyx, Milan Italy

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9:30 AM - R4.2/Q3.2
Interface Characterization of Metals and Metal-nitrides to Phase Change Materials.

Deepu Roy 1 , Rob Wolters 1 2
1 Central R&D, NXP Semiconductors, Eindhoven Netherlands, 2 MESA+ Institute for Nanotechnology, University of Twente, Enschede Netherlands

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9:45 AM - R4.3/Q3.3
Controlled Recrystallization for Low-current RESET Programming Characteristics of Phase Change Memory with Ge-doped SbTe.

Zhe Wu 1 2 , Gang Zhang 1 3 , Young-Wook Park 1 4 , HyungKwang Lim 1 4 , Dongmin Kang 5 , Ho-ki Lyeo 5 , Doo Seok Jeong 1 , Jeung-hyun Jeong 1 , Kwangsoo No 2 , Byung-ki Cheong 1
1 Electronic Material Research Center, Korea Institute of Sceince and Technology, Seoul Korea (the Republic of), 2 Department of Material Sicience and Engineering, Korea Advanced Institute of Science and Technology, Daejeon Korea (the Republic of), 3 SKKU Advanced Institute of Nano-Technology, Sungkyunkwan University, Suwon Korea (the Republic of), 4 Department of Material Sicience and Engineering, Seoul National University, Seoul Korea (the Republic of), 5 Nano and Quantum Science Center, Korea Research Institute of Standards and Science, Daejeon Korea (the Republic of)

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10:00 AM - R4.4/Q3.4
Polyamorphous Compounds for New Fast Non-volatile Memory: Concept and Initial Experimental Results.

Semyon Savransky 1
1 , The TRIZ Experts, Newark, California, United States

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10:15 AM - **R4.5/Q3.5
Scaling Studies of Phase Change Memory.

H.-S. Philip Wong 1 , Sangbum Kim 1 , Marissa Caldwell 2 , Jiale Liang 1 , Rakesh Jeyasingh 1
1 Department of Electrical Engineering, Stanford University, Stanford , California, United States, 2 Department of Chemistry, Stanford University, Stanford , California, United States

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10:45 AM - *
Break

11:15 AM - **R4.6/Q3.6
Recent Progrss and Prospect of Phase Change Memory.

Hongsik Jeong 1
1 Semiconductor Devision, Samsung Electronics, Yongin-City, Gyeonggi-Do, Korea (the Republic of)

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11:45 AM - R4.7/Q3.7
Investigation on Phase Change Behaviors of Si-Sb-Te Alloy: The Effect of Tellurium Segregation.

Xilin Zhou 1 , Liangcai Wu 1 , Zhitang Song 1 , Feng Rao 1 , Kun Ren 1 , Bo Liu 1 , Songlin Feng 1 , Bomy Chen 2
1 State Key Laboratory of Functional Materials for Informatics and Laboratory of Nano-technology, Shanghai Institute of Microsystem and Information Technology (SIMIT), Chinese Academy of Sciences (CAS), Shanghai China, 2 , Silicon Storage Technology, Inc., Sunnyvale, California, United States

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12:00 PM - R4.8/Q3.8
Nanofabrication of Stacked Type TiN/Ge2Sb2Te5/TiN Array for Low-power Consumption PRAM by Block Copolymer.

Jong Moon Yoon 1 , Hu Young Jeong 2 , Sung Hoon Hong 3 , Hyoung Seok Moon 1 , Seong-Jun Jeong 4 , Junhee Han 1 , Yong In Kim 1 , Yong Tae Kim 5 , Heon Lee 3 , Sang Ouk Kim 1 , Jeong Yong Lee 1
1 Materials Science & Engineering, KAIST, Daejeon Korea (the Republic of), 2 Graduate School of EEWS, KAIST, Daejeon Korea (the Republic of), 3 Materials Science and Engineering, Korea University, Seoul Korea (the Republic of), 4 Materials Science and Engineering, University of California, Berkeley, Berkeley, California, United States, 5 Semiconductor Materials and Devices Laboratory, Korea Institute of Science and Technology, Seoul Korea (the Republic of)

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12:15 PM - R4.9/Q3.9
Multi-level Storage in Lateral Multi-layer and Single Layer Phase-change Memory.

You Yin 1 , Sumio Hosaka 1
1 Department of Production Science & Technology, Gunma University, Kiryu, Gunma, Japan

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12:30 PM - R4.10/Q3.10
Void Formation and Analysis of the GeSbTe Thin Film Deposited by DC Sputtering for PRAM.

JeongHee Park 1 , JinHo Oh 1 , JungHwan Park 1 , SungLae Cho 1 , Hideki Horii 1 , DongHo Ahn 1 , ManSug Kang 1 , SugWoo Nam 1
1 Process Development Team, Semiconductor R&D Center, Samsung Electronics Co., Ltd., Kyungki-Do,Hwasung-City, Banwol-Dong, Korea (the Republic of)

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12:45 PM - R4.11/Q3.11
Crystallization Study of GeTe `Melt Quench' for Phase Change Memory Applications.

Audrey Bastard 1 2 4 , Jean-Claude Bastien 1 3 , Sandrine Lhostis 2 , Bérangère Hyot 1 , Caroline Bonafos 4 , Jacques Crestou 4 , Cathy Crestou 4 , Germain Servanton 2 , Frédéric Lorut 2 , Andréa Fantini 1 , Luca Perniola 1 , Emmanuel Gourvest 1 2 , Sylvain Maitrejean 1 , Anne Roule 1 , Véronique Sousa 1
1 , CEA - Leti Minatec, Grenoble France, 2 , ST Microelectronics, Crolles France, 4 , CEMES, Toulouse France, 3 , Laboratoire Verres et Céramiques, Rennes France

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