Meetings & Events

1995 MRS Fall Meeting

November 27–December 1, 1995
Boston, Massachusetts
Meeting Chairs: Michael J. Aziz, Berend T. Jonker, Leslie J. Struble

Symposium AAA—Gallium Nitride and Related Materials

Chairs

Russell D. Dupuis, Microelectronics Research Center
Fernando A. Ponce, Xerox PARC
John A. Edmond, Cree Research Inc.
Shuji Nakamura, Nichia Chemical Industries

Symposium Support

  • Advanced Research Projects Agency
  • Air Products and Chemicals Incorporated
  • AIXTRON
  • Akzo Chemicals
  • Army Research Office
  • Cree Research
  • Crystal Systems
  • EMCORE Corporation
  • Hewlett-Packard
  • JEOL USA Incorporated
  • Morton International
  • National Science Foundation
  • Office of Naval Research
  • Rockwell International
  • Thomas Swan

*Invited Paper

SESSION AAA1: Blue and Green Devices
Chairs: Russell Dupuis and Theodore Moustakas
Monday Morning, November 27
Republic Ballroom (S)

8:30 A.M. *AAA1.1
VISIBLE LIGHT EMITTING DIODE (LED) TECHNOLOGY: STATUS, TRENDS, AND THE POTENTIAL IMPACT OF AlInGaN DEVICES, M. George Craford, Hewlett-Packard, Optoelectronics Division, San Jose, CA.

9:00 A.M. *AAA1.2
STIMULATED EMISSION AND LASER ACTION BY OPTICAL PUMPING AT ROOM TEMPERATURE FROM ALGAN/GAINN DOUBLE HETEROSTRUCTURE GROWN ON 6H-SiC, H. Amano, S. Sota, M. Nishikawa, M. Yoshida, M. Kawaguchi, M. Ohta, H. Sakai and I Akasaki, Meijo University, Department of Electrical and Electronic, Nagoya, Japan.

9:30 A.M. AAA1.3
OPTICALLY-PUMPED GaN-AlGaN DOUBLE-HETEROSTRUCTURE LASERS GROWN BY ECR-GSMBE AND HVPE, P.A. Maki, R.J. Molnar, R.L. Aggarwal, Z.L. Liau and I. Melngailis, Lincoln Laboratory, Massachusetts Institute of Technology, Lexington, MA.

9:45 A.M. AAA1.4
ANALYSIS OF WURTZITE GaN/AlGaN QUANTUM WELL LASERS FROM FIRST PRINCIPLE CALCULATIONS, T. Uenoyama, M. Suzuki Central Research Laboratories, Kyoto, Japan; and S. Kamiyama, Semiconductor Research Center, Matsushita Electric Industrial Company, Ltd., Kyoto, Japan.

10:00 A.M. BREAK

10:30 A.M. AAA1.5
InGaN LIGHT-EMITTING DIODES WITH QUANTUM-WELL STRUCTURES, Shuji Nakamura, Nichia Chemical Industries, Ltd., Department of Research and Development, Tokushima, Japan.

11:00 A.M. AAA1.6
InGaN/GaN MULTIPLE QUANTUM WELL DEPOSITIONS FROM A MULTI WAFER ROTATING DISC REACTOR, C. Yuan, T. Salagaj, M. Schurman, R.A. Stall, EMCORE Research Laboratory, Somerset, NJ; S. Krishnankutty and R.M. Kolbas, North Carolina State University, Raleigh, NC.

11:15 A.M. AAA1.7
BLUE-GREEN LED MATERIAL BASED ON III-NITRIDE MOCVD, D. Schmitz, E. Woelk, G. Strauch and H. Jürgensen, AIXTRON GmbH, Aachen, Germany.

11:30 A.M. AAA1.8
MBE GROWTH OF InxGa(1-x)N (0<= x <= 0.91) FILMS AT GaN GROWTH TEMPERATURES, R. Singh and T.D. Moustakas, Boston University, Department of Electrical Engineering and Center for Photonics Research, Boston, MA.

11:45 A.M. AAA1.9
HIGH-PRECISION CHARACTERIZATION OF III-NITRIDE SEMICONDUCTOR ALLOYS WITH SECONDARY ION MASS SPECTROMETRY (SIMS), Jon W. Erickson and Yumin Gao, Charles Evans and Associates, Redwood City, CA.

SESSION AAA2: GROWTH I
Chairs: George Craford and H. Amano
Monday Afternoon, November 27
Republic Ballroom (S)

1:30 P.M. *AAA2.1
ECR-ASSISTED MBE, T. Moustakas, Boston University, Boston, MA.

2:00 P.M. *AAA2.2
STRUCTURAL, ELECTRICAL AND OPTICAL PROPERTIES OF HIGH QUALITY MBE GROWN GAN, H. Morkoç, University of Illinois, Materials Research Laboratory and Coordinated Science Laboratory, Urbana, IL.

2:30 P.M. AAA2.3
PLASMA-ASSISTED MBE OF GaN AND AlGaN ON 6H-SiC (0001), S. Sinharoy, A.K. Agarwal, L.B. Rowland, G. Augustine, R.L. Messham, M.C. Driver and R.H. Hopkins, Westinghouse Science and Technology Center, Pittsburgh, PA.

2:45 P.M. AAA2.4
MBE GROWTH OF GaN USING LOW ENERGY IONS, Evan Jones, Nate Newman, Alexandra Gassmann, Andre Anders, University of California, Berkeley, Lawrence Berkeley Laboratory, Berkeley, CA; Larry Schloss, University of California, Berkeley, Berkeley, CA; Liu Xiao, University of California, Berkeley, Lawrence Berkeley Laboratory, Berkeley, CA; James Chan, University of California, Berkeley, Berkeley, CA; Christian Kisielowski, Mike Rubin, University of California, Berkeley, Lawrence Berkeley Laboratory, Berkeley, CA; Eicke Weber and Nathen Cheung, University of California, Berkeley, Berkeley, CA.

3:00 P.M. BREAK

3:30 P.M. *AAA2.5
GROWTH AND PROPERTIES OF III-V NITRIDE FILMS, QUANTUM WELL STRUCTURES AND INTEGRATED HETEROSTRUCTURE DEVICES, J.F. Schetzina, North Carolina State University, Department of Physics, Raleigh, NC.

4:00 P.M. AAA2.6
ECR ETCHING CHARACTERISTICS OF GaN IN SiCl4/Ar PLASMAS, L. Zhang, J. Ramer, K. Zheng, L.F. Lester and S.D. Hersee, University of New Mexico, Center for High Technology Materials, Albuquerque, NM.

4:15 P.M. AAA2.7
THE INVESTIGATION OF GaN AND InN GROWTH ON Si AND SAPPHIRE USING IN-SITU TIME OF FLIGHT LOW ENERGY ION SCATTERING (TOF-LEIS) AND RHEED, W. Taferner, A. Bensaoula, E. Kim and A. Bousetta, Space Vacuum Epitaxy Center/University of Houston, Houston, TX.

4:30 P.M. AAA2.8
GROWTH AND OPTICAL PROPERTIES OF GaN GROWN BY MBE ON NOVEL LATTICE-MATCHED OXIDE SUBSTRATES, J.F.H. Nicholls, University of Strathclyde, Department of Physics and Applied Physics, Optical Materials Research Centre, Glasgow, United Kingdom; C.T. Foxon, University of Nottingham, Department of Physics and Applied Physics, Nottingham, United Kingdom; K.P. O'Donnell, University of Strathclyde, Department of Physics and Applied Physics, Semiconductor Spectroscopy and Devices, Glasgow, United Kingdom; B. Henderson, University of Strathclyde, Department of Physics and Applied Physics, Optical Materials Research Centre, Glasgow, United Kingdom; C. Trager-Cowan, University of Strathclyde, Department of Physics and Applied Physics, Semiconductor Spectroscopy and Devices, Glasgow, United Kingdom; H. Gallagher, University of Strathclyde, Department of Physics and Applied Physics, Optical Materials Research Centre, Glasgow, United Kingdom; and B.H.T. Chai, University of Central Florida, Center for Research and Education in Optics and Lasers, Orlando, FL.

4:45 P.M. AAA2.9
HALIDE VAPOR PHASE EPITAXY OF GAN FILMS ON SAPPHIRE AND SI SUBSTRATES, N.R. Perkins, M.N. Horton and T.F. Kuech, University of Wisconsin, Department of Chemical Engineering, Madison, WI.

SESSION AAA3: POSTER SESSION
CRYSTAL GROWTH ISSUES
Chair: Kathy Doverspike
Monday Evening, November 27
8:00 P.M.
Grand Ballroom (S)

AAA3.1 AlN FILMS DEPOSITED BY LP-MOCVD ATOMIC LAYER GROWTH AT LOWER TEMPERATURES USING DMEAA AND AMMONIA, J.N. Kidder Jr., University of Washington, Department of Materials Science and Engineering, Seattle, WA; Jason Kuo, University of Washington, Department of Chemical Engineering, Seattle, WA; T.P. Pearsall, J.W. Rogers Jr., University of Washington, Department of Materials Science and Engineering, Seattle, WA; and J.W. Rogers Jr., University of Washington, Department of Chemical Engineering, Seattle, WA.

AAA3.2 HYDRAZOIC ACID: A POTENT `ACTIVE NITROGEN' PRECURSOR FOR GROUP III NITRIDE GROWTH, Andrew Freedman and Gary N. Robinson, Aerodyne Research, Inc., Center for Chemical and Environmental Physics, Billerica, MA.

AAA3.3 GROWTH OF GaN ON (100)Si USING NEW C/H-FREE SINGLE SOURCE PRECURSORS, John Kouvetakis, Phil Matsunaga, Michael Todd, Arizona State University, Department of Chemistry. Tempe, AZ; David J. Smith, Arizona State University, Department of Physics, Tempe, AZ; and David Beach, Oak Ridge National Laboratory, Department of Chemistry, Oak Ridge, TN.

AAA3.4 A NEW SINGLE SOURCE PRECURSOR APPROACH TO GALLIUM AND ALUMINUM NITRIDE, Deborah A. Neumayer, IBM T.J. Watson Research Center, Yorktown Heights, NY; V. Lakhotia, M.F. Arendt, B. Walden, A.H. Cowley, R.A. Jones and J.G. Ekerdt, University of Texas, Science and Technology Center for Synthesis, Growth and Analysis of Electronic Materials, Austin, TX.

AAA3.5 STRUCTURAL DISORDER IN GaN NUCLEATION LAYERS ON SAPPHIRE; D. Kapolnek, X.H. Wu, E. Tarsa, University of California, Materials Department, Santa Barbara, CA; S. Keller, B.P. Keller, U.K. Mishra, S.P. DenBaars, University of California, Electrical and Computer Engineering Department, Santa Barbara, CA; and J.S. Speck, University of California, Materials Department, Santa Barbara, CA.

AAA3.6 A STUDY OF THE GROWTH PARAMETERS THAT INFLUENCE THE INITIAL STAGES OF MOCVD GROWTH OF GaN ON SAPPHIRE, J.C. Ramer, K. Zheng, M. Banas, C.F. Kranenberg and S.D. Hersee, University of New Mexico, Center for High Technology Materials, Albuquerque, NM.

AAA3.7 LOW TEMPERATURE EPITAXIAL GROWTH OF AlN AND GaN THIN FILMS BY THE METHOD OF ION-ASSISTED DEPOSITION, Ig-Hyeon Kim, Chan-Wook Jeon and Seon-Hyo Kim, POSTECH, Department of Materials Science and English, Pohang, Korea.

AAA3.8 THE SURFACE CHEMISTRY OF TRIALLYLAMINE ON Si(111), G. Landmesser, D. Freundt, Institut für Schicht- und Ionentechnik (ISI), Forschungszentrum Jülich, Jülich, Germany; A. Rizzi, Università di Modena, Dipartimento di Fisica, Modena, Italy; and H. Lüth, Institut für Schicht- und Ionentechnik (ISI), Forschungszentrum Jülich, Jülich, Germany.

AAA3.9 NEW BUFFER LAYERS FOR GaN ON SAPPHIRE BY ATOMIC LAYER AND MOLECULAR STREAM EPITAXY, E.L. Piner, Y.W. He, K.S. Boutros, F.G. McIntosh, J.C. Roberts, S.M. Bedair and N.A. El-Masry, North Carolina State University, Department of Materials Science and Engineering, Raleigh, NC.

AAA3.10 THE EFFECT OF A GaN NUCLEATION LAYER ON GaN FILM PROPERTIES GROWN BY METALORGANIC VAPOR DEPOSITION, Wim Van der Stricht, Ingrid Moerman, Piet Demeester, University of Gent-IMEC, Department of Information Technology, Gent, Belgium; John Crawley and Ted Thrush, Thomas Swan & Company, Ltd., Cambridge, United Kingdom.

AAA3.11 A MODELING STUDY OF GaN GROWTH BY MOVPE, S.A. Safvi, T.F. Kuech, University of Wisconsin, Department of Chemical Engineering, Madison, WI; Joan Redwing and Mike Tischler, Advanced Technology Materials, Danbury, CT.

AAA3.12 SURFACE MORPHOLOGY AND MOSAIC DISPERSION IN GaN AND AlxGa1-xN FILMS GROWN BY LOW-PRESSURE MOCVD, T.J. Kistenmacher, D.K. Wickenden, The Johns Hopkins University, Applied Physics Laboratory, Laurel, MD; M.E. Hawley Los Alamos National Laboratory, Los Alamos, NM; and R.P. Leavitt, U.S. Army Research Laboratory, Adelphi, MD.

AAA3.13 FACETS FORMATION MECHANISM OF GaN HEXAGONAL PYRAMIDS ON DOT-PATTERNS VIA SELECTIVE MOVPE, Kazumasa Hiramatsu, Shota Kitamura and Nobuhiko Sawaki, Nagoya University, Department of Electronics, Nagoya, Japan.

AAA3.14 GaN-MOVPE: CORRELATION BETWEEN COMPUTER MODELLING AND EXPERIMENTAL DATA, Y.N. Makarov, L. Kadinski, University of Erlangen-Nürnberg, Erlangen, Germany; E. Woelk, G. Strauch, D. Schmitz and H. Juergensen, AIXTRON GmbH, Aachen, Germany.

AAA3.15 GALLIUM NITRIDE ON SILICON EPITAXY: IMPORTANCE OF SUBSTRATE PREPARATION PROCEDURE, Gregory A. Martin, University of Illinois at Urbana-Champaig, Coordinated Science Laboratory and Materials Research Laboratory, Urbana, IL and Arizona State University, Department of Physics and Astronomy and Center for Solid State Science, Tempe, AZ; Boris N. Sverdlov, Hadis Morkoc, University of Illinois at Urbana-Champaign, Coordinated Science Laboratory and Materials Research Laboratory, Urbana, IL; D.J. Smith and S.-C.Y. Tsen, Arizona State University, Department of Physics and Astronomy and Center for Solid State Science, Tempe, AZ; W. Howard Thompson and Munir H. Nayfeh, University of Illinois at Urbana-Champaign, Department of Physics, Urbana, IL.

AAA3.16 GROWTH AND DOPING OF AlXGa1-XN ON (6H)-SiC SUBSTRATES VIA ORGANOMETALLIC VAPOR PHASE EPITAXY, Michael D. Bremser, K. Shawn Ailey, William G. Perry, Edwin L. Piner, Nadia A. El-Masry and Robert F. Davis, North Carolina State University, Raleigh, NC.

AAA3.17 BLUE-GREEN LASER MOCVD TECHNOLOGY BASED ON SiC/GaN, G. Strauch, D. Schmitz, E. Woelk, F. Schulte and H. Jürgensen, AIXTRON GmbH, Aachen, Germany.

AAA3.18 MOVPE GROWTH OF HIGH ELECTRON MOBILITY AlGaN/GaN HETEROSTRUCTURES, J.M. Redwing, M.A. Tischler, S. Choi, Advanced Technology Materials, Inc., Danbury, CT; W. Mitchel and A. Saxler, Electronic and Optical Materials Branch, Wright- Patterson AFB, OH.

AAA3.19 MOCVD OF HIGH QUALITY GaInN FILMS, J.C. Roberts, G. McIntosh, K. Boutros, E. Piner, N. El-Masry and S.M. Bedair, North Carolina State University, Department of Electrical and Computer Engineering, Raleigh, NC.

AAA3.20 DESIGN, GROWTH AND OPTICAL CHARACTERIZATION OF GaN/AlGaN BRAGG REFLECTORS, J.M. Redwing, M.A. Tischler, Advanced Technology Materials, Inc., Danbury, CT; D.A. Loeber and N.G. Anderson, University of Massachusetts, Department of Electrical and Computer Engineering, Amherst, MA.

AAA3.21 ECR-MBE AND GSMBE OF GALLIUM NITRIDE ON Sl(111), U. Rössner, J.-L. Rouvière and A. Bourret, A. Barski, CEA - CENG, Grenoble, France.

AAA3.22 GROWTH EVOLUTION OF WIDE BANDGAP NITRIDE SEMICONDUCTORS BY PLASMA SOURCE MOLECULAR BEAM EPITAXY ON HYDROGEN TERMINATED SILICON, G.W. Auner, R. Krupitskaya, P. Zatko, Wayne State University, Department of Electrical and Computer Engineering, Detroit, MI; Gang-Yu Liu, W. Kiridena, K.-Wadu- Mesphrige, Wayne State University, Department of Chemistry, Detroit, MI; R. Naik and P.K. Kuo, Wayne State University, Department of Physics, Detroit, MI.

AAA3.23 GALLIUM INCORPORATION KINETICS DURING GAS-SOURCE MOLECULAR BEAM EPITAXY GROWTH OF GALLIUM NITRIDE, T. Lei, C.R. Jones, R. Kaspi and K.R. Evans, Wright Laboratory, WL/ELDM, WPAFB, OH.

AAA3.24 THE PRODUCTION OF LOW ENERGY, IONIZED NITROGEN IN THE UHV ENVIRONMENT, Michael Stumborg, Fransisco Santiago, Tak Kin Chu and Kevin Boulais, Naval Surface Warfare Center, Dahlgren Division, Silver Spring, MD.

SESSION AAA4: GROWTH II
Chairs: Hadis Morkoc and Jan Schetzina
Tuesday Morning, November 28
Republic Ballroom (S)

9:00 A.M. *AAA4.1
GROWTH OF CUBIC GaN BY MBE, O. Brandt, Paul-Drude Institute, Festkoerperelektronik, Berlin, Germany.

9:30 A.M. AAA4.2
ATMOSPHERIC MOCVD GROWTH OF HIGH QUALITY EPITAXIAL GAN ON SAPPHIRE USING MIXED CUBIC/HEXAGONAL BUFFER LAYERS, X.H. Wu, D. Kapolnek, B. Heying, E.J. Tarsa, University of California, Materials Department, Santa Barbara, CA; S. Keller, B. Keller, U.K. Mishra, S.P. DenBaars, University of California, Electrical and Computer Engineering Department, Santa Barbara, CA; and J.S. Speck, University of California, Materials Department, Santa Barbara, CA.

9:45 A.M. AAA4.3
LOW TEMPERATURE GROWTH OF HIGH QUALITY InxGa1-xN (0<=x0<=0.27) BY ATOMIC LAYER EPITAXY, K.S. Boutros, J.C. Robert, G. McIntosh, E. Piner, N.A. El-Masry and S.M. Bedair, North Carolina State University, Department of Electrical and Computer Engineering, Raleigh, NC.

10:00 A.M. BREAK

10:30 A.M. *AAA4.4
GaAsN ALLOYS AND GaN/GaAs DOUBLE-HETERO STRUCTURES, Michio Sato, NTT Basic Research Laboratories, Kanagawa, Japan.

11:00 A.M. AAA4.5
AlGaInN QUATERNARY ALLOY BY MOCVD, G. McIntosh, E. Piner, K. Boutros, J. Roberts, N. El-Masry and S.M. Bedair, North Carolina State University, Department of Electrical and Computer Engineering, Raleigh, NC.

11:15 A.M. AAA4.6
SUPERSONIC JET EPITAXY: AN IMPROVED METHOD FOR NITRIDE DEPOSITION, Peter E. Norris, Long De Zhu and H. Paul Maruska, NZ Applied Technologies, Woburn, MA.

11:30 A.M. AAA4.7
IN SITU MONITORING OF GALLIUM NITRIDE MOCVD IN A ROTATING DISK REACTOR, K.P. Killeen, Sandia National Laboratories, Albuquerque, NM.

11:45 A.M. AAA4.8
THE EPITAXIAL GROWTH OF SMOOTH AND THICK GaN FILMS BY HYDRIDE VPE, R.P. Vaudo, K.J. Nam, I.D., Goepfert and T.D. Moustakas, Boston University, Boston, MA; and H.P. Maruska, NZ Applied Technologies, Wobum, MA.

SESSION AAA5: GROWTH III
Chairs: Shuji Nakamura and Michio Sato
Tuesday Afternoon, November 28
Republic Ballroom (S)

2:00 P.M. *AAA5.1
LIGHT-EMITTING DEVICES BASED ON GALLIUM NITRIDE AND RELATED COMPOUND SEMICONDUCTORS, M. Koike, N. Shibata, H. Kato, S. Yamasaki, N. Koike, Toyoda Gosei Corporation, Aichi, Japan; H. Amano and I. Akasaki, Meijo University, Department of Electrical and Electronic Engineering, Nagoya, Japan.

2:30 P.M. AAA5.2
LIGHT EMISSION PROPERTIES OF GaN-BASED DOUBLE HETEROSTRUCTURES AND QUANTUM WELLS, David A. Loeber, Neal G. Anderson, University of Massachusetts, Amherst, Department of Electrical and Computer Engineering, Amherst, MA; Joan M. Redwing and Michael A. Tischler, ATMI, Danbury, CT.

2:45 P.M. AAA5.3
ALTERNATIVE ROUTES TO THE MOVPE GROWTH OF GaN AND AlN, J.S. Roberts, V. Roberts, University of Sheffield, Department of Electronic and Electrical Engineering, Sheffield, United Kingdom; A.C. Jones and S. Rushworth, Epichem Ltd, Wirral, United Kingdom.

3:00 P.M. BREAK

3:30 P.M. *AAA5.4
HIGH BIRGHTNESS GaN/SiC BLUE LED's, K.S. Kong, Cree Research Inc., Durham, NC.

4:00 P.M. AAA5.5
LOW RESISTIVITY ALUMINUM NITRIDE: CARBON (ALN:C) FILMS GROWN BY METAL ORGANIC CHEMICAL VAPOR DEPOSITION, K. Wongchotiqul, N. Chen, D.P. Zhang, X. Tang and M.G. Spencer, Howard University, Materials Science Research Center of Excellence School of Engineering, Washington, DC.

4:15 P.M. AAA5.6
GAS PHASE ADDUCT REACTIONS IN MOCVD GROWTH OF GAN, A. Thon and T. F. Kuech, University of Wisconsin, Department of Chemical Engineering, Madison, WI.

4:30 P.M. AAA5.7
PARASITIC REACTIONS BETWEEN ALKYLS AND AMMONIA IN NITRIDE MOCVD GROWTH, Changhua Chen, Heng Liu, Dan Steigerwald, Bill Imler, Chihping Kuo, Hewlett-Packard Optoelectronics Division, San Jose, CA; Mike Ludowise, Steve Lester and Jun Amano, Hewlett-Packard Laboratories, Palo Alto, CA.

4:45 P.M. AAA5.8
THE STUDY OF AMMONIA-ASSISTED MOLECULAR BEAM EPITAXIAL GROWTH OF MG-DOPED GaN, Z. Yang, L.K. Li and W.I. Wang, Columbia University, Department of Electrical Engineering, New York, NY.

SESSION AAA6: POSTER SESSION
CHARACTERIZATION1
Chair: Zusana Lillienthal-Weber
Tuesday Evening, November 28
8:00 P.M.
Grand Ballroom (S)

AAA6.1 NH3 AS NITROGEN SOURCE IN MBE GROWTH OF GaN, M. Kamp, M. Mayer, A. Pelzmann, S. Menzel, H.Y. Chung, T. Albrecht, H. Sternschulte and K.J. Ebeling, University of Ulm, Department of Optoelectronics, Ulm, Germany.

AAA6.2 LOW TEMPERATURE GROWTH OF AlN(0001) ON AN Al(111) SUBSTRATE, John N. Russell Jr., and Victor M. Bermudez, Naval Research Laboratory, Chemistry Division, Washington, DC.

AAA6.3 GROWTH AND CHARACTERIZATION OF AlN/GaN/AlGaN ON SAPPHIRE (0001) BY PLASMA ASSISTED IONIZED SOURCE BEAM EPITAXY, J.M. Myoung, Myung C. Yoo, K.H. Sim, O. Gluschenkov and K. Kim, University of Illinois at Urbana-Champaign, Department of Electrical and Computer Engineering, Urbana, IL.

AAA6.4 MBE GROWTH OF P-TYPE GaN ON N-TYPE SiC, D. Korakakis, A. Sampath, I.D. Goepfert and T.D. Moustakas, Boston University, Department of Electrical Comp. and System Engineering and Center for Photonics Research, Boston, MA.

AAA6.5 PULSED LASER DEPOSITION OF EPITAXIAL WURTZITIC ZINCBLENDE GaN THIN FILMS, David Feiler, R. Stanley Williams, University of California, Los Angeles, Department of Chemistry Biochemistry, Los Angeles, CA; A. Alex Talin, Hojun Yoon Mark S. Goorsky, University of California, Los Angeles, Department of Materials Science Engineering, Los Angeles, CA.

AAA6.6 SINGLE CRYSTAL WURTZITE ALUMINUM NITRIDE GROWTH ON SILICON USING SUPERSONIC GAS JETS, Scott A. Ustin, K.A. Brown, L. Lauhon and W. Ho, Cornell University, Laboratory of Atomic and Solid State Physics and Materials Science Center, Ithaca, NY.

AAA6.7 EPITAXIAL GROWTH OF AlN THIN FILMS ON SILICON AND SAPPHIRE BY PULSED LASER DEPOSITION, R.D. Vispute, H. Wu, K. Jagannadham and J. Narayan, North Carolina State University, Department of Materials Science and Engineering, Raleigh, NC.

AAA6.8 DEPOSITION OF GALLIUM NITRIDE FILMS USING AMMONIA AND TRIETHYLGALLIUM SEEDED HELIUM BEAMS, J.J. Sumakeris, R.K. Chilukuri, North Carolina State University, Department of Chemical Engineering, Raleigh, NC; R.F. Davis, North Carolina State University, Department of Materials Science and Engineering, Raleigh, NC; and H.H. Lamb; North Carolina State University, Department of Chemical Engineering, Raleigh, NC.

AAA6.9 THE GROWTH OF GALLIUM NITRIDE THIN FILMS USING PLASMA-ENHANCED PULSED LASER DEPOSITION, Robert E. Leuchtner, L. Hristakos, W. Brock and Y. Li, University of New Hampshire, Department of Physics, Durham, NH.

AAA6.10 ION-BEAM SYNTHESIS OF GaN IN GaAs, X.W. Lin, Lawrence Berkeley Laboratory, Materials Science Division, Berkeley, CA; R. Maltez, M. Behar, UFRGS, Instituto de Fisica, Porto Alegre, Brazil; W. Swider, Z. Liliental-Weber and J. Washburn, Lawrence Berkeley Laboratory, Materials Science Division, Berkeley, CA.

AAA6.11 EPITAXIAL GROWTH OF GaN ON ScAlMgO4, E.S. Hellman, C.D. Brandle, L.F. Schneemeyer, I. Brener, D. Wiesmann, T. Siegrist, G.W. Berkstresser, D.N.E. Buchanan and E.H. Hartford, AT&T Bell Laboratories, Murray Hill, NJ.

AAA6.12 HIGH TEMPERATURE GROWTH OF CUBIC BORON NITRIDE, R. Clarke, C.A. Taylor, P. Encarnacion, University of Michigan, Harrison B. Randall Laboratory of Physics, Ann Arbor, MI; and S. Fahy, University College, Department of Physics, Cork, Ireland.

AAA6.13 HIGH-RESOLUTION X-RAY DIFFRACTION OF EPITAXIAL GaN FILMS ON Si(100) AND SAPPHIRE BY ION-AND-PLASMA ASSISTED MBE, H. Homma, University of Houston, Physics Department, Houston, TX; A. Bousetta, A. Bensaoula, University of Houston, Space Vacuum Epitaxy Center, Houston, TX; and S.C. Moss, University of Houston, Physics Department, Houston, TX.

AAA6.14 DEFECT CHARACTERIZATION IN GaN FILMS GROWN ON SAPPHIRE BY MOCVD, X.J. Ning, F.R. Chien and P. Pirouz, Case Western Reserve University, Department of Materials Science and Engineering, Cleveland, OH.

AAA6.15 DEFECT MICROSTRUCTURE OF THIN WURTZITE GaN FILMS GROWN BY MBE, B.N. Sverdlov, A. Bochkarev, A. Salvador, H. Morkoc, University of Illinois, Materials Research Laboratory and Coordinated Science Laboratory, Urbana-Champaign, IL; David J. Smith and S.-C. Tsen, Arizona State University, Center for Solid State Science and Department of Physics, Tempe, AZ.

AAA6.16 A MICROSCOPIC EVALUATION OF THE SURFACE AND BULK DEFECT STRUCTURE OF OMVPE DEPOSITED GaN EPILAYERS, W. Qian, G.S. Rohrer and M. Skowronski, Carnegie Mellon University, Department of Materials Science and Engineering, Pittsburgh, PA.

AAA6.17 STRUCTURAL CHARACTERIZATION OF III-V NITRIDE ALLOYS AND HETEROSTRUCTURES GROWN BY MOCVD, M. Schurman, C.Y. Hwang, Y.C. Lu, W.E. Mayo, Rutgers University, Department of Mechanics and Materials Science, Piscataway, NJ; C. Yuan and R.A. Stall, EMCORE Corp., Somerset, NJ.

AAA6.18 AN ATOMIC FORCE MICROSCOPY STUDY OF THE INITIAL NUCLEATION OF GaN ON SAPPHIRE, M. Richards-Babb, West Virginia University, Department of Chemistry, Morgantown, WV; S. L. Buczkowski, Zhonghai Yu and T.H. Myers, West Virginia University, Physics Department, Morgantown, WV.

AAA6.19 MICROSTRUCTURAL CHARACTERIZATIONS OF GaN FILMS ON OFF-AXIS (111) Si SUBSTRATES, F.R. Chien, X.J. Ning, P. Pirouz, Case Western Reserve University, Department of Materials Science and Engineering, Cleveland, OH; K. Stevens, A.F. Schwartzman and R. Beresford, Brown University, Division of Engineering, Providence, RI.

AAA6.20 THE MICROSTRUCTURAL STUDY OF ALUMINUM NITRIDE THIN FILMS: EPITAXY ON THE TWO ORIENTATIONS OF SAPPHIRE AND TEXTURING ON Si, K. Dovidenko, S. Oktyabrsky, J. Narayan, North Carolina State University, Department of Materials Science and Engineering, Raleigh, NC; and M. Razeghi, Northwestern University, Center for Quantum Devices, Evanston, IL.

AAA6.21 ELECTROREFLECTANCE FROM GALLIUM NITRIDE USING SECOND-HARMONIC GENERATION, J. Miragliotta and D.K.Wickenden, Johns Hopkins University, Laurel, MD.

AAA6.22 CONDUCTIVITY MEASUREMENTS ON GaN GROWN BY HYDRIDE VAPOR PHASE EPITAXY, M. Ben-Chorin, J. Diener, B.K. Meyer, D. Volm, Technical University Munich, Department of Physics, Garching, Germany; T. Detchprohm, Nagoya University, School of Engineering, Nagoya, Japan; H. Amano and I. Akasaki, Meijo University, Department of Electrical and Electronical Engineering, Nagoya, Japan.

AAA6.23 NEGATIVE DIFFERENTIAL RESISTIVITY IN GaN METAL-SEMICONDUCTOR-METAL PHOTOCONDUCTORS, Z.C. Huang, Hughes STX Corporation, Greenbelt, MD; J.C. Chen, University of Maryland, Department of Electrical Engineering, Baltimore, MD; Youdou Zheng, Nanjing University, Department of Physics, Nanjing, China; and B.D. Mott, Goddard Space Flight Center, NASA, Greenbelt, MD.

AAA6.24 OPTICAL PROPERTIES OF WURTZITE - AND ZINCBLENDE - GaN FILMS GROWTH BY RF PLASMA-MBE, F. Semendy, N. Bambha, Army Research Laboratory, Fort Belvoir, VA; J.G. Kim, H. Liu and R.M. Park, University of Florida, Department of Materials Science and Engineering, Gainesville, FL.

AAA6.25 CHARACTERIZATION OF GaN FILMS ON SiC BY RAMAN SCATTERING, V.Yu. Davydov, I.N. Goncharuk, I.P. Nikitina, G.G. Zegrya, A.F. Ioffe Institute, St. Petersburg, Russia; and V.A. Dmitriev, Cree Research Inc., Durham, NC.

AAA6.26 EXCITON DYNAMICS IN GaN, J.P. Bergman, C.I. Harris, B. Monemar, Linköping University, Department of Physics and Measurement Technology, Linköping, Sweden; H. Amano and I. Akasaki, Meijo University, Electrical and Electronic Engineering, Nagoya, Japan.

SESSION AAA7: LATTICE MATCH AND DEFECTS
Chairs: Oliver Brandt and M. Koike
Wednesday Morning, November 29
Republic Ballroom (S)
8:30 A.M. *AAA7.1
GROWTH AND PROPERTIES OF BULK SINGLE CRYSTALS OF GaN, T. Suski, UNIPRESS, High Pressure Research Center, Polish Academy of Sciences, Warszawa, Poland.

9:00 A.M. *AAA7.2
LATTICE-MATCHING GROWTH OF InGaAIN SYSTEMS, Takashi Matsuoka, NTT Opto-electronics Laboratories, Kanagawa, Japan.

9:30 A.M. AAA7.3
EPITAXIAL GROWTH OF GaN ON LATTICE MATCHED HAFNIUM SUBSTRATES, R. Beresford, M. Kinniburgh, K.S. Stevens, C. Briant, B. Rong and D.C. Paine, Brown University, Division of Engineering, Providence, RI.

9:45 A.M. AAA7.4
PROPERTIES OF GaN EPITAXIAL LAYER GROWN BY MOVPE ON MgAl2O4 SUBSTRATE, Akito Kuramata, Kazuhiko Horino, Kay Domen, Reiko Soejima and Toshiyuki Tanahashi, Fujitsu Laboratories Ltd., Atsugi, Japan.

10:00 A.M. BREAK

10:30 A.M. *AAA7.5
STRUCTURAL DEFECT IN GaN AND RELATED COMPOUNDS, Z. Liliental-Weber, Lawrence Berkeley Laboratory, Berkeley, CA.

11:00 A.M. AAA7.6
TEM CHARACTERIZATION OF GaN LAYERS GROWN BY MOCVD ON (0001) Al2O3, Jean-Luc Rouviere, Magali Arlery, Alain Bourret, CEA/CENG-DRFMC, Grenoble, France; Niebuhr Rene and Karl-Heins Bachem, Fraunhofer-Institut IAF, Freiburg, Germany.

11:15 A.M. AAA7.7
GROWTH DEFECTS IN GaN FILMS ON 6H-SiC SUBSTRATES, F.R. Chien, X.J. Ning, P. Pirouz, Case Western Reserve University, Department of Materials Science and Engineering, Cleveland, OH; F. Bremser and R.F. Davis, North Carolina State University, Department of Materials Science and Engineering, Raleigh, NC.

11:30 A.M. AAA7.8
DEFECT STUDIES OF GaN UNDER LARGE HYDROSTATIC PRESSURE, C. Wetzel, S. Fischer, W. Walukiewicz, J. Ager III, E.E. Haller, University of California, Berkeley, Lawrence Berkeley Laboratory, Berkeley, CA; I. Grzegory, S. Porowski and T. Suski, Unipress, Polish Academy of Sciences, Warszawa, Poland.

11:45 A.M. AAA7.9
LUMINESCENCE SPECTROSCOPY AND IMAGING OF ALUMINUM GALLIUM NITRIDE FILMS, Lawrence H. Robins, National Institutes of Standards and Technology, Gaithersburg, MD; and Dennis K. Wickenden, Johns Hopkins University, Applied Physics Laboratory, Laurel, MD.

SESSION AAA8: MATERIALS ISSUES
Chairs: Tadek Suski and U. Kaufmann
Wednesday Afternoon, November 29
Republic Ballroom (S)

1:30 P.M. *AAA8.1
HYDROGEN IN III-V NITRIDES, N.M. Johnson and W. Götz, Xerox PARC, Palo Alto, CA.

2:00 P.M. *AAA8.2
GROWTH AND DOPING OF GaN AND AlxGa1-xN FILMS VIA MOVPE AND GSMBE AND THEIR OPTICAL, MICROSTRUCTURAL AND ELECTRICAL CHARACTERIZATION, Robert F. Davis, T.W. Weeks Jr., M.D. Bremser, S.K. Ailey, W.G. Perry, Z. Sitar, C. Wang and K. Linthicum, North Carolina State University, Department of Materials Science and Engineering, Raleigh, NC.

2:30 P.M. AAA8.3
EFFECTS OF SAPPHIRE SUBSTRATE MISORIENTATION ON III-V NITRIDE EPITAXIAL LAYERS, Kirk G. Fertitta, Adrian L. Holmes, Paul A. Grudowski, Frank J. Ciuba, Russell D. Dupuis, University of Texas, The Microelectronics Research Center, Austin, TX; and Fernando A. Ponce, Xerox PARC, Palo Alto, CA.

2:45 P.M. AAA8.4
PHOTOLUMINESCENCE STUDY ON HYDROGEN PASSIVATION IN Mg-DOPED P-TYPE GALLIUM NITRIDE, Y. Li, Y. Lu, Rutgers University, Department of Electrical and Computer Engineering, Piscataway, NJ; H. Shen, M. Wraback, U.S. Army Research Labs; C-Y. Hwang, M. Schurman, W. Mayo, Rutgers University, Department of Mechanics and Material Science, Piscataway, NJ; C. Yuan, T. Salagaj and R.A. Stall, Emcore Corporation, Somerset, NJ.

3:00 P.M. BREAK

3:30 P.M. *AAA8.5
DRY ETCHING OF III-V NITRIDES, S.J. Pearton, University of Florida, Department of Materials Science and Engineering, Gainesville, FL; R.J. Shul, Sandia National Laboratories, Albuquerque, NM; G.F. McLane, Army Research Laboratory, Ft. Monmouth, NJ.

4:00 P.M. AAA8.6
DRY ETCHING OF GALLIUM NITRIDE, A.T. Ping, A.C. Schmitz, I. Adesida, University of Illinois at Urbana-Champaign, Center for Compound Semiconductor Microelectronics, Urbana, IL; and M. Asif Khan, APA Optics, Inc., Blaine, MN.

4:15 P.M. AAA8.7
ION IMPLANTATION OF GaN AT ELEVATED TEMPERATURES, S. Strite, P.W. Epperlein, IBM Research Division, Zurich Research Laboratory, Rüschlikon, Switzerland; A. Dommann, Neu-Technikum Buchs, Buchs, Switzerland; and A. Rockett, University of Illinois, Materials Research Laboratory, Urbana, IL.

4:30 P.M. AAA8.8
ION IMPLANTATION DOPING AND HIGH TEMPERATURE ANNEALING OF GaN, J.C. Zolper, M. Hagerott Crawford, A.J. Howard, Sandia National Laboratories, Albuquerque, NM; S.J. Pearton, C.R. Abernathy, C.B. Vartuli, University of Florida, Department of Materials Science and Engineering, Gainesville, FL; C. Yuan, R.A. Stall, Emcore Corporation, Somerset, NJ; J. Ramer and S.D. Hersee, University of New Mexico, Albuquerque, NM.

4:45 P.M. AAA8.9
THE STUDY OF THE ROLE OF IMPURITIES IN LP-MOCVD GROWN GALLIUM NITRIDE, C.Y. Hwang, Y. Li, M. Schurman, W.E. Mayo, Y. Lu, Rutgers University, Piscataway, NJ; C. Yuan and R.A. Stall, EMCORE Corporation, Somerset, NJ.

SESSION AAA9: POSTER SESSION
ELECTRONIC PROPERTIES
Chair: John Edmond
Wednesday Evening, November 29
8:00 P.M.
Grand Ballroom (S)

AAA9.1 ELECTRONIC PROPERTIES OF AlGaN/GaN DOUBLE QUANTUM WELLS, Rong Zhang, Kai Yang, Bo Shen, Linhong Qin, Zhizhong Chen and Youdou Zheng, Nanjing University, Department of Physics, Nanjing, China; Z.C. Huang and J.C. Chen, University of Maryland, Department of Electrical Engineering, Baltimore, MD.
AAA9.2 CHARACTERIZATION OF PULSED LASER DEPOSITED GaN FILMS BY NEAR EDGE ABSORPTION FINE STRUCTURE (NEXAFS), D.K. Shuh, W.M. Tong, I. Jimenez, Lawrence Berkeley National Laboratory, Berkeley, CA; D. Feiler, R.S. Williams, University of California, Los Angeles, CA; J.A. Carlisle, D.G.J. Sutherland, L.J. Terminello, Lawrence Livermore National Laboratory, Livermore, CA; and F.J. Himpsel, IBM T.J. Watson Research Center, Yorktown Heights, NY.

AAA9.3 INFRARED ABSORPTION AND ELECTRON SPIN RESONANCE SPECTROSCOPIES OF MICROCRYSTALLINE CUBIC BORON NITRIDE/AMORPHOUS HYDROGENATED BORON NITRIDE MIXED PHASE THIN FILMS, Shu-Han Lin, Ian M. Brown and Bernard J. Feldman, University of Missouri, St. Louis, MO.

AAA9.4 TEMPERATURE DEPENDENCE OF THE ABSORPTION BAND GAP EDGE OF GaN, M.O. Manasreh and A.K. Sharma, Phillips Laboratory, Kirtland AFB, NM.

AAA9.5 NEAR-BANDGAP PHOTOLUMINESCENCE DECAY TIME IN GaN EPITAXIAL LAYERS GROWN ON SAPPHIRE, A.Hangleiter, T. Forner, Jin-Seo Im, V. Härle and F. Scholz, University of Stuttgart, Stuttgart, Germany.

AAA9.6 EXCITON LUMINESCENCE OF SINGLE-CRYSTAL GaN, J.R. Müllhäuser, O. Brandt, H. Yang K. Ploog, Paul-Drude-Institut für Festkörperelektronik, Berlin, Germany.

AAA9.7 TRANSITION METAL LUMINESCENCE IN AlN CRYSTALS, K. Pressel, S. Nilsson, Institut für Halbleiterphysik, Frankfurt/Oder, Germany; R. Heitz, A. Hoffmann, Technische Universität Berlin, Institut für Festkörperphysik, Berlin, Germany; and B.K. Meyer, Technische University, München, Germany.

AAA9.8 EXCITONIC RECOMBINATION PROCESSES IN UNDOPED AND DOPED WURTZITE GaN FILMS DEPOSITED ON SAPPHIRE SUBSTRATES, J.A. Freitas Jr., Sachs/Freeman Associates Inc., Landover, MD; K. Doverspike and A.E. Wickenden, Naval Research Laboratory, Washington, DC.

AAA9.9 IDENTIFICATION OF TRANSITION METALS IN GaN GROWN ON 6H-SiC SUBSTRATE BY PHOTOLUMINESCENCE, R. Heitz, Technical University Berlin, Berlin, Germany; K. Pressel, IHP Frankfurt/Oder, Germany; L. Eckey, I. Loa, P. Thurian, A. Hoffmann, Technical University Berlin, Berlin, Germany; and B.K. Meyer, Technical University München, Garching, Germany.

AAA9.10 MAGNETO-OPTIC STUDIES OF GaN FILMS AND GaN/AlGaN HETEROSTRUCTURES, Y.J. Wang, H.K. Ng, Florida State University, National High Magnetic Field Laboratory, Tallahassee, FL; R. Kaplan, K. Doverspike, D.K. Gaskill, Naval Research Laboratory, Washington, DC; T. Ikedo, I. Akasaki and H. Amono, Meijo University, Nagoya, Japan.

AAA9.11 PHOTOCONDUCTIVITY STUDIES OF GaN THIN FILMS AND GaN-BASED LEDs, C.H. Qiu, M.W. Leksono, C. Walker, J.I. Pankove, Astralux Inc., Boulder, CO; W. Melton and C. Hoggatt, University of Colorado, Boulder, CO.

AAA9.12 PICOSECOND RAMAN STUDIES OF ELECTRON-PHONON INTERACTIONS IN THE WIDE BANDGAP SEMICONDUCTOR GaN, K.T. Tsen, Arizona State University, Department of Physics and Astronomy, Tempe, AZ; D.K. Ferry, Arizona State University, Electrical Engineering Department, Tempe, AZ; A. Botchkarev, B. Sverdlov, A. Salvador and H. Morkoc, University of Illinois, Coordinated Science Laboratory, Urbana, IL.

AAA9.13 AB INITIO STUDY OF RECONSTRUCTION OF GaN NONPOLAR SURFACES, Ravindra Pandev, Peter Zapol, Michigan Technological University, Department of Physics, Houghton, MI; and John E. Jaffe, Pacific Northwest Laboratory, Molecular Sciences Research Department, Richland, WA.

AAA9.14 THE PHONON DENSITIES OF STATES OF WURTZITE A1N AND ZrN, C.K. Loong, Argonne National Laboratory, Argonne, IL.

AAA9.15 NUMERIC SIMULATION OF OPTICAL CONFINEMENT IN iii-V NITRIDE DOUBLE HETEROSTRUCTURES, V. Bougrov and A. Zubrilov, Ioffe Institute and Cree Research EED, Inc., St. Petersburg, Russia.

AAA9.16 THEORY OF OPTICAL GAIN IN BULK AND QUANTUM WELL GROUP III-NITRIDES, W.W. Chow, A.F. Wright, Sandia National Laboratories, Albuquerque, NM; A. Knorr, A. Girndt and S.W. Koch, Philipps University, Marburg, Germany.

AAA9.17 ELASTIC CONSTANTS AND RELATED PROPERTIES OF THE GROUP-III NITRIDES, Kwiseon Kim, Walter R.L. Lambrecht and Benjamin Segall, Case Western Reserve University, Department of Physics, Cleveland, OH.

AAA9.18 LUMINESCENCE IN GaN SAMPLES, C. Xavier, T. Monteiro, E. Pereira, Universidade de Aveiro, Departimento de Fisica, Aveiro, Portugal; D.M. Hofman, D. Volm, G. Steude and B.K. Meyer, Technische Universität Munchen, Department of Physics, Munchen, Germany.

AAA9.19 FINE STRUCTURE OF THE 3.42 eV EMISSION BAND IN GaN, S. Fischer, C. Wetzel, W. Walukiewicz and E.E. Haller, University of California, Berkeley, Lawrence Berkeley Laboratory, Berkeley, CA.

AAA9.20 SPATIALLY RESOLVED LUMINESCENCE AND RAMAN STUDY ON THE GaN/SUBSTRATE INTERFACE, H. Siegle, C. Thomsen, L. Eckey, A. Hoffmann, P. thurian, Technische Universität Berlin, Institut für Festkörperphysik, Berlin, Germany; B.K. Meyer, Technische Universität München, Department of Physics, Garching, Germany; H. Amano and I. Akasaki, Meijo University, Department of Electrical and Electronical Engineering, Nagoya, Japan.

AAA9.21 MAGNESIUM DOPING OF GaN BY METALORGANIC CHEMICAL VAPOR DEPOSITION, Hongqiang Lu and Ishwara Bhat, Rensselaer Polytechnic Institute, Troy, NY.

AAA9.22 STABILITY AND VIBRATIONAL MODES OF H AND THE H-Mg COMPLEX IN GaN, Andrea Bosin, Vincenzo Fiorentini, Università di Cagliari, INFM/Dipartimento Scienze Fisiche, Cagliari, Italy; and David Vanderbilt, Rutgers University, Department of Physics, Piscataway, NJ.

AAA9.23 ACCEPTORS AND H-ACCEPTOR COMPLEXES IN GaN: Be, C, Mg, Ca, AND Zn, Vincenzo Fiorentini, Andrea Bosin, INFM/Dipartimento Scienze Fisiche, Cagliari, Italy; Kurt Stokbro, Riccardo Valente, SISSA, Trieste, Italy; and Stefano Baroni, INFM and SISSA, Trieste, Italy, and CECAM, Lyon, France.

AAA9.24 DEFECTS IN GaN GROWN BY ORGANOMETALLIC VAPOR PHASE EPITAXY USING TRIMETHYLGALLIUM AND TRIETHYLGALLIUM, Wei-I Lee and Tsung-Cheng Huang, National Chiao Tung University, Department of Electrophysics, Hsinchu, Taiwan; Jeng-Da Guo and Ming-Shien Feng, National Chiao Tun University, Institute of Materials Science and Engineering, Hsinchu, Taiwan.

AAA9.25 GROWTH OF GAN WITHOUT YELLOW LUMINESCENCE, Xiaolong Zhang, Patrick Kung and M. Razeghi, Northwestern University, Center for Quantum Devices, Department of Electrical Engineering and Computer Sciences, Evanston, IL.

AAA9.26 ELECTRONIC STRUCTURES OF VACANCIES IN CUBIC GALLIUM NITRIDE, Alan F. Wright, J.S. Nelson, Sandia National Laboratories, Albuquerque, NM; V.A. Gubanov, California State University, San Jose, Department of Physics, San Jose, CA; C.Y. Fong and Barry M. Klein, University of California, Davis, Department of Physics, Davis, CA.

AAA9.27 STRUCTURE AND QUASIPARTICLE ENERGIES OF CUBIC, WURTZITE AND HEXAGONAL BN, Giancarlo Cappellini, Università di Cagliari, INFM/Istituto di Fisica, Facade di Medicina, Cagliari, Italy; Vincenzo Fiorentini, Università di Cagliari, INFM/Dipartimento Scienze Fisiche, Cagliari, Italy; Katrin Tenelsen and Friedhelm Bechstedt, FSU Jena, Germany.

SESSION AAA10: POINT DEFECTS
Chairs: Noble Johnson and R. Davis
Thursday Morning, November 30
Republic Ballroom (S)

8:30 A.M. *AAA10.1
THEORY OF POINT DEFECTS AND COMPLEXES IN GaN, Jörg Neugebauer and Chris G. Van de Walle, Xerox PARC, Palo Alto, CA.

9:00 A.M. *AAA10.2
OPTICAL SPECTROSCOPY AND MAGNETIC RESONANCE OF IMPURITIES IN WURTZITE MOCVD GaN/Al2O3, U. Kaufmann, M. Kunzer and C. Merz, Fraunhofer-IAF, Freiburg, Germany.

9:30 A.M. AAA10.3
MAGNETIC RESONANCE STUDIES OF RECOMBINATION PROCESSES IN GaN-BASED LIGHT EMITTING DIODES, W.E. Carlos, E.R. Glaser, T.A. Kennedy, Naval Research Laboratory, Washington, DC; and S. Nakamura, Nichia Chemical Industries, Ltd, Tokushima, Japan.

9:45 A.M. AAA10.4
DETECTION OF MAGNETIC RESONANCE ON SHALLOW DONOR - SHALLOW ACCEPTOR AND DEEP (2.2 eV) RECOMBINATION BANDS FROM GaN FILMS GROWN ON 6H-SiC, E.R. Glaser, T.A. Kennedy, S.W. Brown, Naval Research Laboratory, Washington, DC; J.A. Freitas Jr., Sachs Freeman Associates, Landover, MD; W.G. Perry, M.D. Bremser, T.W. Weeks and R.F. Davis, North Carolina State University, Raleigh, NC.

10:00 A.M. BREAK

10:30 A.M. *AAA10.5
SHALLOW AND DEEP ELECTRONIC LEVELS IN GaN, W. Götz, Xerox PARC, Palo Alto, CA.
11:00 A.M. AAA10.6
SPATIAL DISTRIBUTION OF THE LUMINESCENCE IN GaN THIN FILMS, F.A. Ponce, D.P. Bour, W. Götz, Xerox PARC, Palo Alto, CA; and P.J. Wright, Oxford Instruments, Oxon, United Kingdom.

11:15 A.M. AAA10.7
EXCITATION WAVELENGTH AND SATURATION EFFECTS ON GALLIUM NITRIDE PHOTOLUMINESCENCE, Mike Banas, Guangtian Liu, Jeff Ramer, Kang Zheng, Steve Hersee and Kevin Malloy, University of New Mexico, Center for High Technology Materials, Albuquerque, NM.

11:30 A.M. AAA10.8
DYNAMICAL STUDY OF SURFACE AND INTERFACE LUMINESCENCES FROM EPITAXIAL GaN, L. Eckey, H. Siegle, A. Hoffmann, Technische Universität Berlin, Institut für Festkörperphysik, Berlin, Germany; B.K. Meyer, Technische Universität München, Department of Physics, Garching, Germany; H. Amano and I. Akasaki, Meijo University, Department of Electrical and Electronical Engineering, Nagoya, Japan.

11:45 A.M. AAA10.9
LIGHT EMISSION AND MICROSCOPIC STRUCTURE OF MBE GROWN GaN FILMS, Christian Kisielowski, University of California, Materials Science Department, Berkeley, CA; Zuzanna Liliental-Weber, Lawrence Berkeley Laboratory, Materials Science Division, Berkeley, CA; Nate Newman, Xiao Liu, University of California, Materials Science Department, Berkeley, CA; Wendy Swider, Lawrence Berkeley Laboratory, Materials Science Division, Berkeley, CA; and Eicke R. Weber, University of California, Materials Science Department, Berkeley, CA.

SESSION AAA11: ELECTRONIC AND OPTICAL PROPERTIES
Chairs: Barbara Goldenberg and Werner Gotz
Thursday Afternoon, November 30
Republic Ballroom (S)

1:30 P.M. *AAA11.1
ELECTRONIC AND OPTICAL PROPERTIES OF THE GROUP-III NITRIDES, THEIR HETEROSTRUCTURES AND ALLOYS, Walter R.L. Lambrecht, Kwiseon Kim, Walter R.L. Lambrecht and Benjamin Segall, Case Western Reserve University, Department of Physics, Cleveland, OH.

2:00 P.M. *AAA11.2
(NEGATIVE) ELECTRON AFFINITY OF AlN AND AlGaN ALLOYS, R.J. Nemanich, M.C. Benjamin, M.C. Benjamin, S.W. King, M.D. Bremser, R.F. Davis, B. Chen, Z. Zhang and J. Bernholc, North Carolina State University, Department of Physics and Department of Materials Science and Engineering, Raleigh, NC.

2:30 P.M. AAA11.3
INTERFACIAL REACTIONS BETWEEN METAL THIN FILMS AND p-GaN, J.T. Trexler, S.J. Miller, P.H. Holloway, University of Florida, Department of Materials Science and Engineering, Gainesville, FL; and M. Asif Khan, APA Optics Inc., Blaine, MN.

2:45 P.M. AAA11.4
PHOTOLUMINESCENCE RELATED TO THE 2D ELECTRON GAS AT A GaN/AlGaN HETEROINTERFACE, J.P. Bergman, T. Lundström, B. Monemar, Linköping University, Department of Physics and Measurement Technology, Linköping, Sweden; H. Amano and I. Akasaki, Meijo University, Department of Electrical and Electronic Engineering, Nagaoya, Japan.

3:00 P.M. BREAK

3:30 P.M. *AAA11.5
SPIN-DEPENDENT TRANSPORT IN GaN-LIGHT EMITTING DIODES, M.S. Brandt, N.M. Reinacher and M. Stutzmann, Technical University Munich, Walter Schottky Institut, Munich, Germany.

4:00 P.M. AAA11.6
ROLE OF CARBON IMPURITIES IN GAN PREPARED BY MOCVD, M.S. Brandt, P. de Mierry and M. Stutzmann, Technical University Munich, Garching, Germany.

4:15 P.M. AAA11.7
ANALYSIS OF STRAIN IN GaN ON Al2O3 AND 6H-SiC, N.V. Edwards, M.D. Bremser, T.W. Weeks Jr., North Carolina State University, Department of Materials Science Engineering, Raleigh, NC; H. Liu, EMCORE, Somerset, NJ (now at Hewlett-Packard, San Jose, CA); A.E. Wickenden, K. Doverspike, Naval Research Laboratory, Washington, DC; R.A. Stall, EMCORE, Somerset, NJ; D.K. Gaskill, Naval Research Laboratory, Washington, DC; J.A. Freitas, SFA, Landover, MD; R.F. Davis, North Carolina State University, Materials Science, Raleigh, NC; and D.E. Aspnes, North Carolina State University, Physics Department, Raleigh, NC.

4:30 P.M. AAA11.8
ON COMPENSATION AND IMPURITIES IN STATE-OF-THE-ART GaN EPILAYERS GROWN ON SAPPHIRE, A.E. Wickenden, D.K. Gaskill and K. Doverspike, Naval Research Laboratory, Laboratory for Advanced Materials Synthesis, Washington, DC.

4:45 P.M. AAA11.9
GaN THREE DIMENSIONAL NANOSTRUCTURES, V. Dmitriev and K. Irvine, Cree Research Inc., Durham, NC; A. Zubrilov, D. Tsvetkov, V. Nikolaev, Cree Research EED, St. Petersburg, Russia, M. Jakobson, D. Nelson and A. Sitnikova, A.F. Ioffe Institute, St. Petersburg, Russia.

SESSION AAA12: POSTER SESSION
PHYSICAL PHENOMENA
Chair: Russell Dupuis
Thursday Evening, November 30
8:00 P.M.
Grand Ballroom (S)

AAA12.1 METASTABLE STATES IN GaN STUDIED BY THERMALLY STIMULATED CURRENT SPECTROSCOPY, Z.C. Huang, Hughes STX Corporation, Greenbelt, MD; J.C. Chen, University of Maryland, Department of Electrical Engineering, Baltimore, MD; and B.D. Mott, Goddard Space Flight Center, NASA, Greenbelt, MD.

AAA12.2 SIMULATED ANNEALING EFFECTS ON THE STRUCTURAL AND ELECTRONIC PROPERTIES OF CRYSTALLINE GaN, Stefano Serra, Università di Milano, Dipartimento di Fisica, Milano, Italy; Vincenzo Fiorentini, Università di Cagliari, Dipartimento di Scienze Fisiche, Cagliari, Italy; and Leo Miglio, Università di Milano, Dipartimento di Fisica, Milano, Italy.

AAA12.3 DIELECTRIC FUNCTIONS OF WURTZITE AND ZINCBLENDE STRUCTURE GaN, R. Wang, P.P. Ruden, University of Minnesota, Department of Electrical Engineering, Minneapolis, MN; J. Kolnik, I. Oguzman and K.F. Brennan, Georgia Institute of Technology, School of Electrical and Computer Engineering, Atlanta, GA.

AAA12.4 ELECTRONIC STRUCTURES OF WIDE BANDGAP (GaN)m/(AlN)n [001] SUPERLATTICES, Z.-J. Tian, National Research Council of Canada, Ottawa, Canada, and Université de Montréal, Montréal, Canada; M.W.C. Dharma-Wardana, G.C. Aers, National Research Council of Canada, Ottawa, Canada; and L.J. Lewis, Université de Montréal, Montréal, Canada.

AAA12.5 STRUCTURAL AND ELECTRONIC PROPERTIES OF AlN, GaN, AND InN, AND BAND OFFSETS AT AlN/GaN (0001) AND (100) INTERFACES, Alessandra Satta, Vincenzo Fiorentini, Andrea Bosin, Franco Meloni, INFM/Dipartimento Scienze Fisiche, Cagliari, Italy; and David Vanderbilt, Rutgers University, Department of Physics, Piscataway, NJ.

AAA12.6 XPS MEASUREMENT OF THE SiC/AlN BAND-OFFSET AT THE (0001) INTERFACE, Sean King, M.C. Benjamin, R.J. Nemanich, R.F. Davis, North Carolina State University, Department of Materials Science and Engineering and Physics, Raleigh, NC; and W.R.L. Lambrecht, Case Western University, Department of Physics, Cleveland, OH.

AAA12.7 MONTE CARLO CALCULATION OF HOLE TRANSPORT IN BULK ZINCBLENDE PHASE OF GAN INCLUDING A PSEUDOPOTENTIAL CALCULATED BAND STRUCTURE, I.H. Oguzman, J. Kolnik, K.F. Brennan, Georgia Tech School of Electrical and Computer Engineering, Atlanta, GA; R. Wang and P.P. Ruden, University of Minnesota, Department of Electrical Engineering, Minneapolis, MN; and Y. Wang, Motorola Inc., Tempe, AZ.

AAA12.8 THEORETICAL STUDY OF ELECTRON INITIATED IMPACT IONIZATION RATE IN BULK GAN USING A WAVE-VECTOR DEPENDENT NUMERICAL TRANSITION RATE FORMULATION, J. Kolnik, I. Oguzman, K.F. Brennan, Georgia Tech, School of Electrical and Computer Engineering, Atlanta, GA; R. Wang and P.P. Ruden, University of Minnesota, Department of Electrical Engineering, Minneapolis, MN; and Y. Wang, Motorola Inc., Tempe, AZ.

AAA12.9 ANNEALING STUDY OF ION IMPLANTED MOCVD AND MBE GROWN GaN, Eric Silkowski, Yung Kee Yeo and Robert Hengehold, Air Force Institute of Technology, WPAFB, OH; M. Asif Khan, APA Optics, Blaine, MN; Ting Lei and Keith Evans, Wright Laboratory, WPAFB, OH.

AAA12.10 PHOTOLUMINESCENCE OF RARE EARTH IMPLANTED GaN/SAPPHIRE, Tiesheng Li, Henryk Lozykowski and Amer K. Alshawa, Ohio University, Department of Electrical and Computer Engineering, Athens, OH.

AAA12.11 ROLE OF C, O AND H IN III-V NITRIDES, C.R. Abernathy, S.J. Pearton, J.D. MacKenzie, J.W. Lee, C.B.Vartuli, University of Florida, Department of Materials Science and Engineering, Gainesville, FL; R.G. Wilson, Hughes Research Laboratories, Malibu, CA; R.J. Shul, J.C. Zolper, Sandia National Laboratories, Albuquerque, NM; and J.M. Zavada, U.S. Army Research Laboratory, Research Triangle Park, NC.

AAA12.12 EX SITU AND IN SITU METHODS FOR OXIDE AND CARBON REMOVAL FROM AlN AND GaN SURFACES, S.W. King, L.S. Smith, J.P. Barnak, North Carolina State University, Department of Materials Science and Engineering, Raleigh, NC; Ja-Hum Ku, J.A. Christman, M.C. Benjamin, North Carolina State University, Department of Physics, Raleigh, NC; M.D. Bremser, North Carolina State University, Department of Materials Science and Engineering, Raleigh, NC; R.J. Nemanich, North Carolina State University, Department of Physics, Raleigh, NC; and R.F. Davis, North Carolina State University, Department of Materials Science and Engineering, Raleigh, NC.

AAA12.13 ION DAMAGE ANNEALING OF EPITAXIAL GaN LAYERS AND COMPARISON WITH GaAs/AlGaAs MATERIALS, H.H. Tan, J.S. Williams, The Australian National University, Research School of Physical Sciences and Engineering, Department of Electronic Materials Engineering, Canberra, Australia; C. Yuan, EMCORE Corporation, Somerset, NJ; and S.J. Pearton, University of Florida, Department of Materials Science Engineering, Gainesville, FL.

AAA12.14 A GAS PHASE CHEMICAL ETCHANT FOR BORON NITRIDE FILMS, Stephen J. Harris, Anita M. Weiner, General Motors R&D, Physical Chemistry Department, Warren, MI; Gary L. Doll, General Motors R&D, Physics Department, Warren, MI; and Derek C. Chance, Wayne State University, Physics Department, Detroit, MI.

AAA12.15 THE EFFECT OF HIGH DENSITY PLASMA ETCHING ON THE ELECTRONIC PROPERTIES OF GALLIUM NITRIDE, C.R. Eddy Jr. and B. Molner, Naval Research Laboratory, Washington, DC.

AAA12.16 PLASMA CHEMISTRY DEPENDENT ECR ETCHING OF GaN, R.J. Shul, A.J. Howard, Sandia National Laboratories, Albuquerque, NM; S.J. Pearton, C.R. Abernathy, C.B. Vartuli, University of Florida, Department of Materials Science and Engineering, Gainesville, FL; and P.A. Barnes, Auburn University, Auburn, AL.

AAA12.17 REACTIVE ION ETCHING OF AlN, AlGaN AND GaN USING BCl3, W.C. Hughes, W.H. Rowland Jr., J.W. Cook Jr. and J.F. Schetzina, North Carolina State University, Department of Physics, Raleigh, NC.

AAA12.18 WSix OHMIC CONTACTS ON InGaN, A. Durba, S.J. Pearton, C.R. Abernathy, P.H. Holloway, University of Florida, Department of Materials Science and Engineering, Gainesville, FL; and F. Ren, AT&T Bell Laboratories, Murray Hill, NJ.

AAA12.19 SCHOTTKY CONTACTS ON N-TYPE GALLIUM NITRIDE, A.C. Schmitz, A.T. Ping, I. Adesida, University of Illinois at Urbana-Champaign, Center for Compound Semiconductor Microelectronics, Urbana, IL; and M. Asif Khan, APA Optics, Inc., Blaine, MN.

AAA12.20 SCHOTTKY BARRIERS ON p-GaN, N.I. Kuznetsov, E.V. Kalinina, V.A. Soloviev and V.A. Dmitriev, Cree Research EED, St. Petersburg, Russia.

AAA12.21 POHTOCONDUCTIVITY IN N-TYPE GaN, Patrick Kung, Xiaolong Zhang, Danielle Walker, Jósef Piotrowski, Antoni Rogalski and Manijeh Razeghi, Center for Quantum Devices, Northwestern University, Department of Electrical Engineering and Computer Science, Evanston, IL.

AAA12.22 EFFECTS OF HIGH CURRENT STRESS ON ELECTRICAL PROPERTIES OF NICHIA AlGaN/InGaN/GaN BLUE LEDs, Joachim Zeller, Petr G. Eliseev and Marek Osinski, University of New Mexico, Center for High Technology Materials, Albuquerque, NM.

AAA12.23 ROOM TEMPERATURE LIFE TEST OF NICHIA AlGaN/InGaN/GaN BLUE LIGHT EMITTING DIODES, Marek Osinski, B. Scott Phillips, University of New Mexico, Center for High Technology Materials, Albuquerque, NM; Niel Berg, Christopher J. Helms and Daniel L. Barton, Sandia National Laboratories, Albuquerque, NM.

AAA12.24 GROWTH, CHARACTERIZATION AND DEVICE FABRICATION OF GAN, Xiuling Li, Shi Qun Gu, Andrew M. Jones, S. David Roh, Erik E. Reuter, Douglas A. Turnbull, Steve G. Bishop and James J. Coleman, University of Illinois, Microelectronics Laboratory, Urbana, IL.

AAA12.25 CHARACTERISTICS OF A REACTIVELY SPUTTERED ALNx THIN FILM STRAIN GAGE FOR USE AT ELEVATED TEMPERATURES, Otto J. Gregory, Arnout Bruins Slot, Paul S. Amons, University of Rhode Island, Chemical Engineering, Kingston, RI; and Everett E. Crisman, Brown University Chemical Engineering, Providence, RI.

SESSION AAA13: DEVICE ISSUES
Chairs: Martin Brandt and John Edmond
Friday Morning, December 1
Republic Ballroom (S)

8:30 A.M. *AAA13.1
ULTRAVIOLET PHOTODETECTORS BASED ON GaN, B.L. Goldenberg, J.D. Zook, R. Ulmer and S. Reimer, Honeywell Technology Center, Plymouth, MN.

9:00 A.M. *AAA13.2
UV-VISIBLE PHOT. AND ELECTRONIC DEVICES, M.A. Khan, Blaine, MM.

9:30 A.M. AAA13.3
METALLURGICAL STUDY OF ELECTRICAL CONTACTS TO GALLIUM NITRIDE, S.E. Mohney, B.P. Luther, X. Lin, The Pennsylvania State University, Department of Materials Science and Engineering, University Park, PA; and T.N. Jackson, The Pennsylvania State University, Department of Electrical Engineering, University Park, PA.

9:45 A.M. AAA13.4
CALCULATIONS OF THE SPECIFIC RESISTANCE OF CONTACTS TO III-V NITRIDE COMPOUNDS, P.A. Barnes, X-J. Zhang, Auburn University, Department of Physics, Auburn, AL; M.L. Lovejoy, T.J. Drummond, H.P. Hjalmarson, M. Crawford, R.J. Shul and J.C. Zolper, Sandia National Laboratories, Albuquerque, NM.

10:00 A.M. BREAK

10:30 A.M. *AAA13.5
THE GROWTH OF GaN FILMS FOR HIGH FREQUENCY FET APPLICATIONS, K. Doverspike, Hewlett Packard, Optoelectronics Division, San Jose, CA; A.E. Wickenden, S.C. Binari, D.K. Gaskill, Naval Research Laboratory, Washington, DC; and J.A. Frietas Jr., SFA Inc., Landover, MD.

11:00 A.M. AAA13.6
IMPROVED UNIFORMITY OF Ti/Al OHMIC CONTACTS TO n-GaN GROWN BY MOCVD, J. Brown, J. Ramer, M. Banas, L.F. Lester, K.J. Malloy and S.D. Hersee, University of New Mexico, Center for High Technology Materials, Albuquerque, NM.

11:15 A.M. AAA13.7
OHMIC CONTACT FORMATION TO DOPED GaN, L.L. Smith, M.D. Bremser, E.P. Carlson, T.W. Weeks Jr., North Carolina State University, Department of Materials Science and Engineering, Raleigh, NC; Y. Huang, M.J. Kim, R.W. Carpenter, Arizona State University, Center for Solid State Sciences, Tempe, AZ; and R. F. Davis, North Carolina State University, Department of Materials Science and Engineering, Raleigh, NC.

11:30 A.M. AAA13.8
ELECTRIC BREAKDOWN IN NITRIDE pn JUNCTIONS, V.A. Dmitriev, K.G. Irvine, C.H. Carter Jr., Cree Research Inc., Durham, NC; N.I. Kuznetsov, Cree Research EED and A.F. Ioffe Institute, St. Petersburg, Russia.

11:45 A.M. AAA13.9
SPECTRAL RESPONSE OF GAN P-N JUNCTION PHOTOVOLTAIC STRUCTURES, Danielle Walker, Xialong Zhang, Patrick Kung, Józef Piotrowski, Antoni Rogalski and M. Razeghi, Northwestern University, Center for Quantum Devices, Department of Electrical Engineering and Computer Sciences, Evanston, IL.


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