Meetings & Events

1995 MRS Fall Meeting

November 27–December 1, 1995
Boston, Massachusetts
Meeting Chairs: Michael J. Aziz, Berend T. Jonker, Leslie J. Struble

Symposium B—Advanced Laser Processing of Materials -- Fundamentals and Applications

Chairs

Rajiv Singh University of Florida
J. Narayan
,  North Carolina State University
David Norton
Oak Ridge National Laboratory
Jeff Cheung
,  Rockwell International Science Ctr
L.D. Laude
, University of Mons-Hainaut

*Invited Paper

SESSION B1: FUNDAMENTALS OF
LASER/SOLID INTERACTIONS
Monday Morning, November 27
Salon A/B (M)


9:00 A.M. *B1.1
PHASE TRANSITIONS INDUCED BY FEMTOSECOND PULSES, N. Bloembergen, Harvard University, Cambridge, MA.

9:45 A.M. B1.2
FS SPECTROSCOPY OF PHONON EMISSION AND ABSORPTION FOR A COLD PLASMA IN GALLIUM ARSENIDE, A. Agnesi, A. Cavalleri, A.M. Malvezzi, G.C. Reali, University of Pavia, Departimento di Elettronica and INFM, Pavia, Italy.

10:00 A.M. B1.3
INVESTIGATION OF ELECTRONIC EXCITATION CRYSTALLIZATION ENHANCEMENT IN AMORPHOUS GeSb FILMS UPON ULTRASHORT LASER PULSE IRRADIATION, J. Solis, C.N. Afonso, Instituto de Optica, CSIC, Madrid, Spain; S.C.W. Hyde, N.P. Barry and P.M.W. French; Imperial College, Femtosecond Optics Group, London, United Kingdom.

10:15 A.M. B1.4
DIRECT TIME DOMAIN MEASUREMENT OF ULTRAFAST ELECTRON RELAXATION AT COPPER SURFACES BY NOVEL FEMTOSECOND TIME-RESOLVED PHOTOEMISSION SPECTROSCOPY, J. Cao, Y. Gao, University of Rochester, Department of Physics and Astronomy, Rochester, NY; R.J.D. Miller, University of Rochester, Chemistry Department, Rochester, NY; H.E. Elsayed-Ali, Old Dominion University, Department of Electrical and Computer Engineering, Norfolk, VA; and D.A. Mantell, Xerox Corporation, Webster Research Center, Webster, NY.

10:30 A.M. BREAK
10:45 A.M. *B1.5
PHOTOCHEMICAL AND PHOTOTHERMAL PROCESSES DURING LASER IRRADIATION OF WIDE BANDGAP MATERIALS, J.T. Dickinson, Washington State University, Department of Physics, Pullman, WA.

11:15 A.M. B1.6
DESORPTION AND ABLATION OF SOLID AND LIQUID METALS BY SHORT UV LASER PULSES, M. Stuke, A. Demchuk, T. Goetz and S. Preuss, Max-Planck-Institut für Biophysik Chemie, Göttingen, Germany.

11:30 A.M. B1.7
ABLATION STUDIES USING UV-FEMTOSECONDS, G. Herbst, M. Steiner, Telekom Forschungs-und Technologiezentrum, Berlin, Germany; G. Marowsky, Laser-Laboratorium, Göttingen, Germany; E. Matthias and K. Böhmer, Freie Universitat, Fachbereich Physik, Berlin, Germany.

11:45 A.M. B1.8
SIMULATION OF SHORT PULSE LASER-SOLID INTERACTIONS DURING MATERIALS PROCESSING, R.K. Singh, University of Florida, Department of Materials Science and Engineering, Gainesville, FL; and P.P. Pronko, University of Michigan, Ultrafast Science Lab, Ann Arbor, MI.

SESSION B2: FUNDAMENTALS OF PULSED
LASER ABLATION AND FILM GROWTH
Monday Afternoon, November 27
Salon A/B (M)

1:30 P.M. *B2.1
FAST SPECTROSCOPIC IMAGING OF LASER ABLATION PLUME FORMATION AND TRANSPORT, David B. Geohegan, Oak Ridge National Laboratory, Oak Ridge, TN; and Alex A. Puretzky, Institute of Spectroscopy, Troitsk, Russia.


2:00 P.M. B2.2
2D MODELISATION OF LASER INDUCED PLASMA EXPANSION, H.C. Le, Université Aix-Marseille II, Faculte des Sciences de Luminy, Marseille, France; D. Zeitoun, Université de Provence, Laboratoire Interdisplinaire Ablation Laser et Application, Marseille, France; W. Marine, URA-CNRS, Marseille, France; and M. Sentis, Université Aix-Marseille II, Faculte des Sciences de Luminy, Marseille, France.

2:15 P.M. B2.3
DIAGNOSTICS OF PULSED PLASMA FLUXES IN LASER DEPOSITION OF THIN FILMS, Simeon Metev, Michael Ozegowski, Gerd Sepold and Sven Burmester, BIAS, Bremen Institute of Applied Beam Technology, Bremen, Germany.

2:30 P.M. B2.4
INFLUENCE OF THE SHAPE AND SIZE OF THE LASER SPOT ON THE SPATIAL DISTRIBUTION OF A PLASMA PLUME, A. Mele, A. Giardini Guidoni, Universita' di Roma, "La Sapienza", Dipartimento di Chimica, Rome, Italy; R. Kelly, A. Moitello, Universita' di Trento, Dipartimento di Fisica, Povo, Italy; S. Orlando and R. Teghil, Istituto Materiali Speciali-CNR, Tito Scalo, Italy.

2:45 P.M. B2.5
PULSED LASER ABLATION OF ZnO: ENERGETIC RYDBERG STATE ATOMS AND THEIR IMPACT ON FILM GROWTH, Robert E. Leuchtner, University of New Hampshire, Department of Physics, Durham, NH.

3:00 P.M. BREAK

3:30 P.M. *B2.6
LASER MBE FOR ATOMICALLY DEFINED CERAMIC FILM GROWTH, H. Koinuma, M. Kawasaki and M. Yoshimoto, Tokyo Institute of Technology, Yokohama, Japan.

4:00 P.M. B2.7
IN-SITU PLUME DIAGNOSTICS DURING PULSED LASER DEPOSITION OF EPITAXIAL OXIDE THIN FILMS, David B. Fenner, Pang-Jen Kung, Jörn Göres and Qi Li, AFR, Inc., East Hartford, CT.

4:15 P.M. B2.8
ATOM SCALE GROWTH CONTROL PROCESS OF OXIDE THIN FILMS BY LASER MOLECULAR BEAM EPITAXY, T. Kawai, H. Nishikawa, K. Koguchi and M. Kanai, ISIR-Sanken, Osaka University, Osaka, Japan.

4:30 P.M. B2.9
MECHANISMS FOR NON-STOICHIOMETRIC TRANSFER OF COMPLEX OXIDES BY PULSED LASER DEPOSITION, B. Dam, J.H. Rector, J. Johansson, S. Kars and R. Griessen, Free University, Faculty of Physics and Astronomy, Amsterdam, Netherlands.

4:45 P.M. B2.10
A NOVEL LASER ABLATION PROCESS FOR DEFECT FREE EPITAXIAL FILM GROWTH, Sarath Witanachchi and Pritish Mukherjee, University of South Florida, Department of Physics, Tampa, FL.

SESSION B3: POSTER SESSION
Monday Evening, November 27
8:00 P.M.
Grand Ballroom (S)

B3.1 SIMULATION LASER-SOLID INTERACTIONS DURING PROCESSING OF MULTILAYERED MATERIALS, V., Ambumani, J. Viatella and R.K. Singh, University of Florida, Department of Materials Science and Engineering, Gainesville, FL.

B3.2 APPLICATION OF LASER MICROETCHING IN FORMATION OF AIR-BEARING SURFACE FOR MAGNETIC HEAD SLIDERS, Y.F. Lu and K.D. Ye, National University of Singapore, Department of Electrical Engineering, Singapore.

B3.3 EXCIMER LASER APPLICATIONS IN INTEGRATED CIRCUIT PACKAGING, Y.F. Lu, M.H. Hong, D.S.H. Chan and T.S. Low, National University of Singapore, Department of Electrical Engineering, Singapore.

B3.4 LASER DRY CLEANING OF ZrO2 PARTICLES ON MAGNETIC HEAD SLIDERS, Y.F. Lu, W.D. Song, M.H. Hong, T.C. Chong and T.S. Low, National University of Singapore, Department of Electrical Engineering, Singapore.

B3.5 C - AXIS ORIENTED FERROELECTRIC THIN FILMS OF PbTiO3 ON SILICON SUBSTRATE BY PULSED LASER ABLATION, V.R. Palkar, S.C. Purandare, S.P. Pai, S. Chattopadhyay, P.R. Apte, R. Pinto and M.S. Multani, Tata Institute of Fundamental Research, Bombay, India.

B3.6 PULSED LASER DEPOSITION OF BORON NITRIDE, Keon Bae Shin, Seung Min Park, Kyung Hee University, Department of Chemistry, Seoul, Korea; Young Man Kim, Korea Institute of Science and Technology, Seoul, Korea.

B3.7 INVESTIGATION OF LASER-INDUCED ETCHING OF Ti IN PHOSPORIC ACID, R. Nowak, S. Metev, K. Meteva and G. Sepold, BIAS Bremen Institute of Applied Beam Technology, Bremen, Germany.

B3.8 SURFACE MODIFICATIONS OF FULLERITE INDUCED BY PULSED LASER IRRADIATION, P. Milani and M. Manfredini, INFM and INFN Università di Milano, Dipartimento di Fisica, Milano, Italy.

B3.9 VISIBLE LUMINESCENCE FROM LASER-INDUCED STAIN- AND DRY ETCHED SILICON, D. Dimova-Malinovska, M. Tzolov, Central Laboratory for Solar Energy and New Energy Sources, Bulgarian Academy of Sciences, Sofia, Bulgaria; and N. Malinowski, Max-Planck-Institut für Festkörperforschung, Stuttgart, Germany.

B3.10 EXCIMER-LASER SURFACE HEAT TREATMENT OF InSe AND In2Se3, E. Jacobsohn and M.A. Ryan, Jet Propulsion Laboratory, California Institute of Technology, Pasadena, CA.

B3.11 KrF LASER-INDUCED NANOMETER Si CRYSTALLITIES FORMATION AND TEM OBSERVATION, Xinfan Huang, Zhifeng Li, Wei Wu, Xiaoyuan Chen, Ling Hong, Qi Li and Kunji Chen, Nanjing University, Department of Physics and National Laboratory of Solid State Microstructures, Nanjing, China.

B3.12 ATOMIC KINETICS OF PLASMA FORMATION DURING LASER ABLATION, M.E. Sherrill and R.C. Mancini, University of Nevada, Department of Physics, REno, NV.

B3.13 STRUCTURAL RELAXATION AND DE-RELAXATION PHENOMENA IN Ge AMORPHOUS FILMS UPON IRRADIATION WITH SHORT AND ULTRASHORT LASER PULSES, J. Solis, J. Siegel and C.N. Afonso, Instituto de Optica, CSIC, Madrid, Spain.

B3.14 SILICON GROWTH RATE ENHANCEMENT USING TRISILANE IN A LASER-DIRECT WRITING TECHNIQUE, S. Boughaba, Ecole Polytechnique, Department of Engineering Physics, Montreal, Canada; and G. Auvert, France Telecom-CNET, Meylan, France.

B3.15 LASER CRYSTALLIZATION AND ANNEALING OF FERROELECTRIC THIN FILMS, J.S. Zhu, X.M. Lu, X. Liu and Y.N. Wang, Nanjing University, National Laboratory of Solid State Microstructures, Nanjing, China.

B3.16 MODELING THE LASER ABLATION OF MULTILAYER POLYMER FILMS, J.R. Sobehart, Los Alamos National Laboratory, Center for Nonlinear Studies, Los Alamos, NM.

B3.17 RAMAN SPECTROSCOPY STUDY OF PULSED LASER INDUCED STRUCTURAL TRANSFORMATIONS IN AMORPHOUS Ge FILM, C. Gracía, A.C. Prieto, J. Jiménez, Universidad de Valladolid, Física de la Materia Condensada, Valladolid, Spain; J. Siegel, J. Solfs and C.N. Afonso, CSIC, Instituto de Optica, Madrid, Spain.

B3.18 LASER-CONTROLLED ETCHING OF (Al,Ga)As EPITAXIAL LAYERS, T.C. Chong, Y.F. Lu and A. Lee, National University of Singapore, Department of Electrical Engineering, Singapore.

B3.19 PARTICULATE FORMATION DURING THE PULSED LASER DEPOSITION OF BaTiO3 THIN FILMS, John W. Hastie, Peter K. Schenck, Mark D. Vaudin, David W. Bonnell and Albert J. Paul, National Institutes of Standards and Technology, Gaithersburg, MD.

B3.20 LASER ENCAPSULATION OF METALLIC FILMS IN SiO2, A.J. Pedraza, S. Cao, University of Tennessee, Department of Materials Science and Engineering, Knoxville, TN; D.H. Lowndes, Oak Ridge National Laboratory, Solid State Division, Oak Ridge, TN; and L.F. Allard, Oak Ridge National Laboratory, High Temperature Materials Laboratory, Oak Ridge, TN.

B3.21 LASER MELTING AND RECRYSTALLIZATION OF BULK Si BY NANOSECONDS UV LASER PULSES, C. Garcia, A.C. Prieto and J. Jiménez, Universidad Valladolid, ETS Ingenieros Industriales, Valladolid, Spain.

B3.22 GRAIN BOUNDARY LOCATION CONTROLLED Si THIN FILMS VIA EXCIMER LASER CRYSTALLIZATION, Hyun J. Kim and James S. Im, Department of Chemical Engineering, Materials Science and Mining Engineering, New York, NY.

B3.23 MODELING OF FILM GROWTH IN PULSED LASER DEPOSITION, M. Tyunina, Larvian University, Institute of Solid State Physics, Riga, Latvia.

SESSION B4: PULSED LASER DEPOSITION
OF SEMICONDUCTORS
Tuesday Morning, November 28
Salon A/B (M)

9:00 A.M. *B4.1
PULSED LASER ABLATION GROWTH AND DOPING OF EPITAXIAL COMPOUND SEMICONDUCTOR FILMS, Douglas H. Lowndes, Christopher M. Rouleau, D.B. Poker, D.B. Geohegan, A. Puretzky and J.D. Budai, Oak Ridge National Laboratory, Solid State Division, Oak Ridge, TN; M. Strauss, J.W. Park and A.J. Pedraza, University of Tennessee, Department of Materials Science and Engineering, Knoxville, TN.

9:30 A.M. B4.2
PULSED LASER ABLATION OF CdSxSe1-x THIN FILMS, A. Giardini, Universitá La Sapienza, Dipartimento di Chimica, Roma, Italy; M. Ambrico, D. Smaldone, R. Martino, Instituto per i Materiali Speciali, Tito Scalo, Italy; and V. Capozzi, Dipartimento di Fisica, Physics Department, Bari, Italy.

9:45 A.M. B4.3
FABRICATION OF CdS THIN FILMS USING CONTINUOUS LASER EVAPORATION, E. Tenpas, K.D. Vuong, S. Orloff, J.G. Fagan, X.W. Wang and V. Wu, Alfred University, Department of Electrical Engineering, Alfred, NY.

10:00 A.M. B4.4
LASER ABLATION DEPOSITION OF Ga2S3-La2S3 GLASS FILMS, R. Asal, P. Rivers and H.N. Rutt, University of Southampton, Department of Electronic and Computer Science, Southampton, United Kingdom.

10:15 A.M. BREAK

SESSION B5: LASER DEPOSITION OF DLC
AND REATED COMPOUNDS
Tuesday Morning, November 28
Salon A/B (M)

10:45 A.M. B5.1
DEPOSITION OF DIAMOND-LIKE CARBON FILMS BY EXCIMER LASERS USING FROZEN SOURCE GASES, Mitsugu Hanabusa and Kiyohito Tsujihara, Toyohashi University of Technology, Department of Electrical Electronic Engineering, Toyohashi, Japan.

11:00 A.M. B5.2
GROWTH OF CNx FILMS USING ION-ASSISTED PULSED-LASER DEPOSITION, T.A. Friedmann, D. R. Tallant, M.P. Siegal, J.P. Sullivan, J.C. Barbour, Sandia National Laboratories, Livermore, CA; and K.F. McCarty, Sandia National Laboratories, Albuquerque, NM.

11:15 A.M. B5.3
DEPOSITION OF DIAMOND-LIKE CARBON FILMS WITH FEMTOSECOND LASER PULSES, F. Qian, R.K. Singh, University of Florida, Department of Materials Science and Engineering, Gainesville, FL; S.K. Dutta and P.P. Pronko, University of Michigan, Center for Ultrafast Optical Science, Ann Arbor, MI.

11:30 A.M. B5.4
PULSED LASER DEPOSITION OF DIAMOND FILMS FROM AN ORGANIC LIQUID TARGET, Rong-Fu Xiao, Hong Kong University of Science and Technology, Department of Physics, Kowloon, Hong Kong.

11:45 A.M. B5.5
AREA SELECTIVE LASER CHEMICAL VAPOR DEPOSITION OF DIAMOND, Mikael Lindstam, Mats Boman, Karin Larsson, Göran Stenberg and Jan-Otto, Uppsala University, Institute of Chemistry, Uppsala, Sweden.

SESSION B6: PULSED LASER ABLATION OF
WIDE BANGDGAP MATERIALS
Tuesday Afternoon, November 28
Salon A/B (M)

1:30 P.M. B6.1
THIN FILMS OF Pb1-x/100Lax/100(Zry/100,Tiz/100)O3 MADE BY PULSED LASER DEPOSITION FOR OPTOELECTRONIC APPLICATIONS, D.B. Chrisey, L.A. Knauss, J.S. Horwitz, R.C.Y. Auyeung, E.P. Donovan, Naval Research Laboratory, Washington, DC; and W. Johnstone, University of Stratclyde, Glasgow, United Kingdom.

1:45 P.M. B6.2
STRAINED LiNbO3/SAPPHIRE HETEROSTRUCTURES GROWN BY PULSED LASER DEPOSITION, Yoshihiko Shibata, Naohiro Kuze, Masahiro Matsui, Asahi Chemical Industry Company, Ltd., Central Laboratory, Fuji, Japan; Masaki Kanai and Tomoji Kawai, Osaka University, ISIR-Sanken, Ibaraki, Japan.

2:00 P.M. B6.3
TANTALUM OXIDE AND NIOBIUM OXIDE THIN FILMS GROWN BY PULSED LASER DEPOSITION, Félix E. Fernández and Pablo J. Marrero, University of Puerto Rico, Department of Physics, PR.

2:15 P.M. B6.4
EPITAXIAL GROWTH OF METAL-FLUORIDE THIN FILMS USING PULSED-LASER DEPOSITION, D.P. Norton, J. D. Budai and B.C. Chakoumakos, Oak Ridge National Laboratory, Solid State Division, Oak Ridge, TN. 2:30 P.M. B6.5
LARGE AREA PULSED LASER AND SOL-GEL DEPOSITION OF AURIVILLIUS - TYPED LAYERED PEROVSKITE THIN FILMS, A. Pignolet, C. Curran, S. Welke, D. Hesse, U. Gösele, Max-Planck-Institut of Microstructure Physics, Halle (Saale), Germany and M. Alexe, Institute of Physics and Technology of Materials, Bucharest, Romania.

2:45 P.M. B6.6
GIANT MAGNETORESISTANCE PHENOMENON IN LASER ABLATED La0.6Y0.07Ca0.33MnOx THIN FILMS, Dhananjay Kumar, R. Kalyanaraman, J. Narayan, North Carolina State University, Department of Materials Science and Engineering, Raleigh, NC; and David K. Christen, Oak Ridge National Laboratory, Oak Ridge, TN.

3:00 P.M. BREAK

SESSION B7: PULSED LASER DEPOSITION OF THIN FILMS
Tuesday Afternoon, November 28
Salon A/B (M)

3:30 P.M. B7.1
DEPOSITION OF NbTex THIN FILMS USING LASER ABLATION. STRUCTURE AND SPATIAL COMPOSITION ANALYSES, H. Sassoli, URA C.N.R.S 783, G.P.E.C, Marseille, France; F. Grangeon, U.M. 34 C.N.R.S, IRPHE, Marseille, France; Y. Mathey, URA C.N.R.S 783, G.P.E.C, Marseille, France; M. Autric, U.M. 34 C.N.R.S, IRPHE, Marseille, France; D. Pailharey and W. Marine, URA C.N.R.S 783, G.P.E.C, Marseille, France.

3:45 P.M. B7.2
FABRICATION OF A BARIUM TITANATE-STRONTIUM TITANATE STRAINED LAYER SUPERLATTICE, Samuel D. Harkness, S. Venigalla and R.K. Singh, University of Florida, Department of Materials Science and Engineering, Gainesville, FL.

4:00 P.M. B7.3
OPTICAL AND ELECTRONIC CHARACTERIZATION OF ZnO:Ga TRANSPARENT CONDUCTING FILMS GROWN BY PULSED LASER DEPOSITION, J.M. Siqueiros, J.A. Díaz, O. Contreras, G. Soto, Universidad Nacional Auónoma de México, Instituto de Física, Coronado, CA; G.A. Hirata, O. López, J.Y. Yi, J. McKittrick and T. Cheeks, University of California, San Diego, Materials Science Program, La Jolla, CA.

4:15 P.M. B7.4
EPITAXIAL GROWTH OF TiN ON SAPPHIRE AND SILICON-ON-SAPPHIRE BY PULSED LASER DEPOSITION, R.D. Vispute, K. Dovidenko and J. Narayan, North Carolina State University, Department of Materials Science and Engineering, Raleigh, NC.

4:30 P.M. B7.5
PULSED LASER DEPOSITION AND CRYSTALLIZATION OF TRANSPARENT CONDUCTING THIN FILMS, H.M. Phillips, Li Yunjun, Bi Zhaoqi and Zhang Binglin, Zhengzhou University, Henan Fundamental and Applied Research Center and Physics Department, Zhengzhou, China.

4:45 P.M. B7.6
PULSED LASER DEPOSITION OF POLY(TETRAFLOUROETHYLENE) FILMS, D. Kjendaql, Ashok Kumar, University of South Alabama, Department of Electrical Engineering, Mobile, AL; R.B. Inturi and J.A. Barnard, University of Alabama, Department of Metallurgical and Materials Engineering, Center for Materials Information Technology, Tuscaloosa, AL.

SESSION B8: NOVEL APPLICATIONS
OF LASER PROCESSING
Wednesday Morning, November 29
Salon A/B (M)

8:30 A.M. *B8.1
APPLICATIONS OF LASER PROCESSING FOR SENSORS AND ACTUATORS, M. Meunier, R. Izquierdo, B. Shen, A. Bergeron, M. Allard, S. Boughaba, S. Leclerc, A. Lecours, D. Ivanov, J.F. Currie, A. Yelon, École Polytechnique, Département de Génie Physique, Montréal, Canada; F. Hanus and L. Laude, Université de Mons, Belgique.

9:00 A.M. B8.2
LASER RAPID PROTOTYPING OF LASER DRIVEN MOVEABLE 3D MICRO-OBJECTS DIRECTLY FROM THE VAPOR PHASE, O. Lehmann and M. Stuke, Max-Planck-Institut für Biophysik Chemie, Göttingen, Germany.

9:15 A.M. B8.3
LASER-ASSISTED SYNTHESIS OF UNIQUE GRADED SURFACE COMPOSITES, R.K. Singh and J. Fitz-Gerald, University of Florida, Department of Materials Science and Engineering, Gainesville, FL.

9:30 A.M. B8.4
A NON-REACTIVE EXCIMER-BASED SURFACE PREPARATION AND CLEANING TOOL FOR BROAD-BASED INDUSTRIAL APPLICATIONS, E.C. Harvey, J. Fletcher, Exitech Limited, Oxford, United Kingdom; and A.C. Engelsberg, Radiance Services Company, Bethesda, MD.



9:45 A.M. B8.5
CO2 LASER CLEANING OF MICROELECTRONIC MATERIALS SURFACES: A THOROUGH INVESTIGATION OF SOME EXPERIMENTAL PARAMETERS, S. Boughaba, J.B. Héroux, E. Sacher and M. Meunier, Ecole Polytechnique, Department of Engineering Physics, Montreal, Canada.

10:00 A.M. B8.6
REVERSIBLE PHOTOREDOX PROCESSING OF TRANSITION METAL OXIDES, R. Martin Villarica, Laser Chemical Corporation, Fayetteville, NY; Fazio Nash, J. Chaiken, Syracuse University, Department of Chemistry, Syracuse, NY; Joe Osman and Rebecca Bussjager, Rome Laboratory, Griffiss AFB, OH.

10:15 A.M. BREAK

SESSION B9: LASER-DRIVEN FORMATION OF
NANOCRYSTALLINE MATERIALS
Wednesday Morning, November 29
Salon A/B (M)

10:45 A.M. *B9.1
PULSED LASER DEPOSITION OF Si NANOCLUSTER FILMS, W. Marine, I. Movtchan, A. Simakine, L. Patrone, R. Dreyfus, Laboratoire Interdisciplinaire Ablation Laser et Applications, URA CNRS 783, Marseille, France; H.C. Le, M. Sentis, UM CNRS 34, Marseille, France; and N. Merk, EPFL Lausanne Faculté des Sciences de Luminy, Université de la Méditerranée, Marseille, France.

11:15 A.M. B9.2
SYNTHESIS OF THIN FILMS OF SIZE SELECTED SILICON NANOCRYSTALLITES USING PULSED LASER ABLATION SUPERSONIC EXPANSION, E. Werwa and K.D. Kolenbrander, Massachusetts Institute of Technology, Department of Materials Science and Engineering, Cambridge, MA.

11:30 A.M. B9.3
MECHANICAL PROPERTIES OF HIGH STRENGTH ALUMINUM ALLOYS FORMED BY PULSED LASER DEPOSITION, J.A. Knapp and D.M. Follstaedt, Sandia National Laboratories, Albuquerque, NM.

11:45 A.M. B9.4
SYNTHESIS OF MAGNETITE PARTICLES BY PULSED ALEXANDRITE LASER PROCESSING OF METALLIC GLASS PRECURSORS, M. Sorescu, Duquesne University, Pittsburgh, PA; S.A. Schafer and E.T. Knobbe, Oklahoma State University, Stillwater, OK.

SESSION B10: SURFACE MODIFICATION AND ETCHING
Wednesday Afternoon, November 29
Salon A/B (M)

1:30 P.M. *B10.1
LASER-ASSISTED DRY ETCHING ABLATION FOR MICROSTRUCTURING OF III-V SEMICONDUCTORS, J.J. Dubowski, Institute for Microstructural Sciences, National Research Council of Canada, Ottawa, Canada.

2:00 P.M. B10.2
ON THE ORIGIN OF LASER-INDUCED SURFACE ACTIVATION OF CERAMICS, A.J. Pedraza, University of Tennessee, Department of Materials Science and Engineering, Knoxville, TN; D.H. Lowndes, Oak Ridge National Laboratory, Solid State Division, Oak Ridge, TN; and W.R. Allen, Martin Marietta Energy Systems, Inc., Oak Ridge, TN.

2:15 P.M. B10.3
EXCIMER LASER BEAM INTERACTION WITH SINTERED Y2O3-DOPED ALUMINIUM NITRIDE CERAMIC FUNDAMENTALS AND APPLICATION, N. Detournay, K. Kolev, T. Robert, M. Brunel and L.D. Laude, Université de Mons-Hainaut, Mons, Belgium.

2:30 P.M. B10.4
EXCIMER LASER PROCESSING OF TOOL STEEL: CHANGES IN MECHANICAL PROPERTIES, T.R. Jervis, M. Nastasi, A.J. Griffin Jr., T.G. Zocco, T.N. Taylor and S.R. Foltyn, Los Alamos National Laboratory, Materials Science and Technology Division, Los Alamos, NM.

2:45 P.M. B10.5
AMIDE TO ACTIVE AMINE CONVERSION OF NYLON BY DEEP UV IRRADIATION, Jeffrey D. Cohen, Earl Erkenbrecher, Sharon L. Haynie, Michael J. Kelley, Henry Kobsa, A. Nicholas Roe and Michael H. Scholla, E. I. duPont de Nemours & Co., Inc., Wilmington, DE.

3:00 P.M. B10.6
STRUCTURE-PROPERTY RELATIONSHIP OF CERAMIC-METAL INTERFACES PRODUCED BY LASER PROCESSING, J.Th.M. De Hosson, University of Groningen, Department of Applied Physics, Groningen, Netherlands.

3:15 P.M. BREAK
SESSION B11: PULSED LASER PROCESSING OF
SEMICONDUCTORS
Wednesday Afternoon, November 29
Salon A/B (M)

3:45 P.M. B11.1
SINGLE SHOT EXCIMER LASER ANNEALING OF AMORPHOUS SILICON, Pierre Boher, Marc Stehle, Bruno Godard and Jean Louis Stehle, SOPRA S.A., Bois-Colombes, France.

4:00 P.M. B11.2
SEQUENTIAL LATERAL SOLIDIFICATION OF THIN Si FILMS: A LOW-TEMPERATURE PROCESS FOR PRODUCING SINGLE-CRYSTAL Si FILMS ON SiO2, Robert S. Sposili and James S. Im, Department of Chemical Engineering, Materials Science and Mining Engineering, New York, NY.

4:15 P.M. B11.3
EXCIMER LASER CRYSTALLIZATION AND DOPING OF SILICON FILMS ON PLASTIC SUBSTRATES, Patrick M. Smith, Paul G. Carey and Thomas W. Sigmon, Lawrence Livermore National Laboratory, Livermore, CA.

4:30 P.M. B11.4
CONTROL OF THRESHOLD VOLTAGE ON THE EXCIMER LASER ANNEALED POLY-Sl TFTs BY OXYGEN PLASMA TREATMENT ON POLY-Sl SURFACE, Jai-lk Woo, Sang-Gul Lee, Dae-Gyu Moon and Jung-Kee Yoon, LG Electronics Inc., LCD Research Laboratory, Kyongki-Do, Korea.

4:45 P.M. B11.5
MELTING EVAPORATION AND RECRYSTALLIZATION OF a-SiC:H FILMS BY EXCIMER LASER, Sunil Wickramanayaka, Ken Kitamura, Yoichiro Nakanishi and Yoshinori Hatanaka, Shizuoka University, Research Institute of Electronics, Hamamatsu, Japan.

SESSION B12: POSTER SESSION
Wednesday Evening, November 29
8:00 P.M.
Grand Ballroom (S)

B12.1 EFFECT OF AMBIENT GAS PRESSURE ON PULSED LASER ABLATION PLUME DYNAMICS AND ZnTe FILM GROWTH, Christopher M. Rouleau, Douglas H. Lowndes, Oak Ridge National Laboratory, Oak Ridge, TN; M. Strauss, S. Cao, J.W. Park, A.J. Pedraza, University of Tennessee, Department of Materials Science and Engineering, Knoxville, TN; L.F. Allard, Oak Ridge National Laboratory, High Temp. Materials Lab., Oak Ridge, TN; and W. R. Allen, Martin Marietta Energy Systems Inc., Oak Ridge, TN.

B12.2 USE OF EXCIMER LAMP FOR PHOTO-CHEMICAL RESISTLESS ETCHING OF THERMAL OXCIDE SILICON LAYER SUBSTRATE, N. Kamata and M. Murahara, Tokai University, Department of Electrical Engineering, Kanagawa, Japan.

B12.3 PHOTO-CHEMICAL ETCHING ON SILICON-CARBIDE BY USING KrF EXCIMER LASER AND Xe2 EXCIMER LAMP, K. Hasegawa and M. Murahara, Tokai University, Department of Electrical Engineering, Kanagawa, Japan.

B12.4 ADHESIVE PROPERTY ENHANCEMENT BY PHOTOCHEMICAL MODIFICATION ON POLYIMIDE SHEET SURFACE BY IRRADIATION WITH EXCIMER-LAMP, M. Aoike and M. Murahara, Tokai University, Department of Electrical Engineering, Kanagawa, Japan.

B12.5 ENLARGED LASER-INDUCED VOLTAGES AT ROOM TEMPERATURE IN Pr DOPED YBa2Cu3O7 THIN FILMS, H.-U. Habermeier, N. Jisrawi, G. Jäger - Waldau and B. Leibold, Max-Planck-Institut für Festkörperforschung, Stuttgart, Germany.

B12.6 ETCHING BEHAVIORS OF POLYIMIDE THIN FILMS BELOW AND ABOVE ABLATION THRESHOLD BY AN EXCIMER LASER, Xiang Zhang and Costas P. Grigoropoulos, University of California, Berkeley, Department of Mechanical Engineering, Berkeley, CA.

B12.7 OPTICAL DETECTION OF SLOW EXCITED NEUTRALS IN PLASMA-ASSISTED EXCIMER LASER ABLATION, Pritish Mukherjee, Palanikumaran Sakthivel and Sarath Witchachchi, University of South Florida, Department of Physics, Tampa, FL.

B12.8 AN INVESTIGATION OF THE PHYSICAL BASIS OF A NOVEL DUAL-LASER ABLATION PROCESS, Pritish Mukherjee, Palanikumaran Sakthivel and Sarath Witchachchi, University of South Florida, Department of Physics, Tampa, FL.

B12.9 DIRECTED LIGHT FABRICATION OF IRON-BASED MATERIALS, D.J. Thoma, E.M. Schwartz, G.K. Lewis and R.B. Nemec, Los Alamos National Laboratory, Los Alamos, NM.

B12.10 EXCIMER LASER-INDUCED DRY ETCHING OF SiO2 FILMS, V.K. Popov, Scientific Research Center for Technological Lasers, Moscow, Russia.


B12.11 LASER ASSISTED DEPOSITON OF AMORPHOUS CARBON AT ROOM TEMPERATURE, G. Stenberg, K. Piglmayer, and J-O Carlsson, Uppsala University, Institute of Chemistry, Uppsala, Sweden.

B12.12 TEM STUDY OF LASER ABLATED TiN FILMS ON SAPPHIRE AND SILICON-ON-SAPPHIRE (SOS), K. Dovidenko, S. Oktyabrsky, R.D. Vispute and J. Narayan, North Carolina State University, Department of Materials Science and Engineering, Raleigh, NC.

B12.13 DIRECT TIME-DOMAIN MEASUREMENT OF ELECTRON RELAXATION IN A LAYERED ELECTRON GAS, S. Xu, University of Rochester, Center for Photoinduced Charge Transfer, Rochester, NY; J. Cao, University of Rochester, Department of Physics, Rochester, NY; C.C. Miller, University of Rochester, Center for Photoinduced Charge Transfer, Rochester, NY; D.A. Mantell, Xerox Corporation, Webster Research Center, Webster, NY; R.J.D. Miller, University of Rochester, Center for Photoinduced Charge Transfer, Rochester, NY; and Y. Gao, University of Rochester, Department of Physics, Rochester, NY.

B12.14 LASER INDUCED CHEMICAL ETCHING OF Si WITH SF6 USING COPPER BROMIDE VAPOR LASER, B. Ivanov, D. Filipov, Higher Institute of Chemical Technology, Department of Semiconductors, Sofia, Bulgaria; P. Ivanov, DZU/DMON, Surface Analysis Laboratory, Stara Zagora, Bulgaria.

B12.15 CRYSTALLIZATION OF AMORPHOUS TITANIUM OXIDE THIN FILMS BY PULSED UV-LASER IRRADIATION, Yo Ichikawa, Hideaki Adachi, Kentaro Setsune, Syun-ichiro Kawashima, Koichi Kugimiya, Matsushita Electric Ind., Central Research Laboratories, Kyoto, Japan; Keizaburo Kuramasu and Tadashi Kawamata, Matsushita Electric Ind., Corporate material Development Laboratory, Osaka, Japan.

B12.16 REAL-TIME OPTICAL MONITORING OF TUNGSTEN NUCLEATION AND GROWTH DURING LASER CVD, Xiafang Zhang and Susan D. Allen, Tulane University, Laser Microfabrication Lab, New Orleans, LA.

B12.17 COMPARISON AND ANALYSIS OF NUMERICAL AND EXPERIMENTAL RESULTS FOR THE MELTING AND VAPORIZATION OF LASER PROCESSED MATERIALS, Daniel W. Phillips, Robert E. Spall, University of South Alabama, Department of Mechanical Engineering, Mobile, AL; David L. Kjendal and Ashok Kumar, University of South Alabama, Department of Electrical Engineering, Mobile, AL.

B12.18 MECHANICAL PROPERTIES OF LASER PROCESSED DIAMOND-LIKE CARBON FILMS, U. Ekanayake, N. Shu, D. Kjendal, G. Wattuhewa, Ashok Kumar, University of South Alabama, Department of Electrical Engineering, Mobile, AL; R.B. Inturi, J.A. Barnard, University of Alabama, Department of Metallurgical and Materials Engineering and Center for Materials Information Technology, Tuscaloosa, AL; and Yogesh K. Vohra, University of Alabama at Birmingham, Department of Physics, Birmingham., AL.

B12.19 EXCIMER-LASER CRYSTALLIZATION OF Si FILMS VIA BI-DIRECTIONAL IRRADIATION OF DUAL LAYER FILMS ON TRANSPARENT SUBSTRATES, Jung H. Yoon and James S. Im, Columbia University, Department of Chemical Engineering, Materials Science and Mining Engineering, New York, NY.

B12.20 SINGLE-CRYSTAL Si ISLANDS ON QUARTZ SUBSTRATES OBTAINED VIA HIGH TEMPERATURE EXCIMER LASER IRRADIATION, Hyun J. Song and James S. Im, Department of Chemical Engineering, Materials Science and Mining Engineering, New York, NY.

B12.21 NON-EQUILIBRIUM TWO-DIMENSIONAL MODEL OF EXCIMER LASER MELTING AND SOLIDIFICATION OF THIN FILMS Si: Vikas V. Gupta, Hyun J. Song and James S. Im, Department of Chemical Engineering, Materials Science and Mining Engineering, New York, NY.

B12.22 TIME-RESOLVED VUV OBSERVATIONS OF LASER-PRODUCED YBa2Cu3O7 PLASMAS, D.B. Chrisey, J.S. Horwitz, Naval Research Laboratory, Washington, DC; and G. Mehlman, SFA Inc., Landover, MD.

B12.23 RAMAN STUDIES ON Sr(Al1/2Nb1/2)O3 (SAN) SINGLE-CRYSTALS PREPARED BY LASER HEATED PEDESTAL GROWTH TECHNIQUE, Ruiwu Tao, A.R. Guo, C.-S. Tu, R.S. Katiyar, University of Puerto Rico, Department of Physics, Rio Piedras, PR; Ruyan Guo and A.S. Bhalla, Pennsylvania State University, Materials Research Laboratory, University Park, PA.

B12.24 NITRIZATION OF ZIRCONIA BY IRRADIATION OF Nd:YAG LASER BEAM, Satoru Fujitsu, Masahiro Sawai, Shonan Institute of Technology, Kanagawa, Japan; Ken-ichi Kawamura and Hideo Hosono, Tokyo Institute of Technology, Kanagawa, Japan.

B12.25 LASER INDUCED NANOFABRICATION ON TITANIUM THIN FILMS, Bryan D. Huey, University of Pennsylvania, Department of Materials Science, Philadelphia, PA; Andre A. Gorbunov, Andreas Sewing and Wolfgang Pompe, Max-Planck-Gesellschaft, Dresden, Deutschland.

B12.26 X-RAY PHOTOELECTRON AND AUGER STUDIES OF QUATERNARY METAL OXIDE MEMBRANES SYNTHESIZED BY PULSED LASER ABLATION, Dale L. Perry, Richard E. Russo and Xiang L. Mao, University of California, Lawrence Berkeley Laboratory, Berkeley, CA.

B12.27 LASER ABLATION SYNTHESIS AND CHARACTERIZATION OF PHOTOCHROMIC FILMS, Dale L. Perry, Richard E. Russo and Xiang L. Mao, University of California, Lawrence Berkeley Laboratory, Berkeley, CA.

B12.28 EXCIMER LASER ANNEALING OF TITANIUM THIN FILMS TO FORM LOW RESISTIVE INTERCONNECTS IN SILICON BASED DEVICES, R.V. Nagabushnam, C.F. Yue, V.R. Rakesh, R.K. Singh, University of Florida, Department of Materials Science and Engineering, Gainesville, FL; S. Sharan and G. Sandhu, Micro Semiconductor, Boise, ID.

B12.29 LASER INDUCED "MICRO-LPE" IN InGaAsP/InP HETEROEPITAXIAL LAYERS, Christopher W. Snyder, James W. Lee and Ralph A. Logan, AT&T Bell Laboratories. Murray Hill, NJ.

B12.30 LASER LOW-TEMPERATURE DEPOSITION OF DIAMOND FILM, Z.C. Feng, B.C. Zhang, Y. Zhao, Y.Q. Wang, J. Feng and Y. Liang, Institute of Metal Research Academia Sinica, Department of Laser Processing, Shenyang, China.

B12.31 COATING AND CUTTING OF TEXTILE FIBERS BY PULSED LASER PROCESSING, Priti Rani, SVDT College, Textile Department, Bombay, India; D. Kumar, North Carolina State University, Department of Materials Science and Engineering, Raleigh, NC.

B12.32 EFFECT OF HIGH-POWER CO2 LASER PULSES AND THERMAL ANNEALING ON THE ELECTRICAL PROPERTIES OF n-Si, M. Mounir, Cairo University, Faculty of Science, Giza, Egypt; and A. Asaad, Cairo University, National Institute of Laser Enhanced Sciences, Giza, Egypt.

SESSION B13: LASER-ASSISTED CVD
Thursday Morning, November 30
Salon A/B (M)

8:30 A.M. *B13.1
INSTABILITIES AND STRUCTURE FORMATION IN LASER PROCESSING, D. Bäuerle, Johannes-Kepler Universität Linz, Angewandte Physik, Linz, Australia.

9:00 A.M. B13.2
DIRECT WRITE OF GaAs WAVEGUIDE BY LASER ASSISTED CHEMICAL VAPOR DEPOSITION, J.C. Roberts, K. Boutros and S.M. Bedair, North Carolina State University, Department of Electrical and Computer Engineering, Raleigh, NC.

9:15 A.M. B13.3
LASER DIRECT WRITING OF ALUMINUM CONDUCTOR LINES FROM LIQUID PHASE PRECURSOR, Q.J. Chen and S.D. Allen, Tulane University, Laser Microfabrication Lab, New Orleans, LA.

9:30 A.M. B13.4
LASER PROCESSING OF OPTICAL MATERIAL FOR MICROELECTRONIC APPLICATION, P. Comita, IBM Almaden Research Center, San Jose, CA.

10:00 A.M. BREAK

10:30 A.M. *B13.5
IN SITU DIAGNOSTICS OF VUV LASER CVD OF SEMICONDUCTORS BY FTIR SPECTROSCOPY AND SPECTROSCOPIC ELLIPSOMETRY, P. Hess, University of Heidelberg, Institute of Physical Chemistry, Heidelberg, Germany.

11:00 A.M. B13.6
CONSTANT STEP HEIGHT COPPER DEPOSITION FROM Cu(hfac)(TMVS) INDUCED BY EXCIMER LASER RADIATION, D. Popovici, K. Piyakis, E. Sacher and M. Meunier, École Polytechnique, Département de Génie Physique, Montréal, Canada.

11:15 A.M. B13.7
EXCIMER LASER INDUCED PHTOLYTIC DEPOSITION OF ALUMINUM NITRIDE: FILM GROWTH AND PROPERTIES, Gouri Radhakrishnan and Paul M. Adams, The Aerospace Corporation, Mechanics and Materials Technology Center, Los Angeles, CA.

11:30 A.M. B13.8
LASER-ASSISTED CHEMICAL VAPOUR DEPOSITION OF NICKEL AND LASER CUTTING IN INTEGRATED CIRCUIT MODIFICATION, Janne Remes, Hannu Moilanen and Seppo Leppävuori, University of Oulu, Department of Electrical Engineering, Linnanmaa, Finland.

11:45 A.M. B13.9
OPEN AIR FABRICATION PROCESS OF Cu THIN FILMS ON TEFLON SURFACE USING ArF EXCIMER LASER IRRADIATION, M. Okoshi, K. Toyoda, The Institute of Physical and Chemical Research (Riken), Saitama, Japan; and M. Murahara, Tokai University, Department of Electrical Engineering, Kanagawa, Japan.

The following exhibitors have identified their products and services as directly related to your research:

Products and Services
A&N Corporation
Advanced Control Systems Corp.
Alcatel Vacuum Products, Inc.
Alfa Aesar
ASTeX/Applied Science & Technology, Inc.
Balzers
Cryomech, Inc.
Cymer Laser Technologies
Edwards High Vacuum International
Heraeus Amersil, Inc.
Kurt J. Lesker Company
Maxtek, Inc.
Melles Griot
Neocera, Inc.
New Focus, Inc.
Philips Semiconductors/Materials Analysis Group
Plasmaterials, Inc.
SOPRA, Inc.
Staib Instruments, Inc.
Thermionics Laboratory, Inc.
VAT, Inc.

See page 6 for a list of companies exhibiting books and software and a complete list of exhibitors.