Symposium BB—Metal-Organic Chemical Vapor Deposition of Electronic Ceramics II
Chairs
Seshu B. Desu, Virginia Tech
David B. Beach, Oak Ridge National Laboratory
Peter C. Van Buskirk, Advanced Technology Materials, Inc.
Symposium Support
- U.S. Department of Energy
*Invited Paper
JOINT SESSION BB1/S1: MOCVD OF
ELECTRONIC NON-OXIDE CERAMICS
Chairs: A.E. Kaloyeros and David Beach
Monday Morning, November 27
Independence East (S)
8:30 A.M. *BB1.1/S1.1
LARGE LATTICE MIS-MATCH EPITAXY, S. Mahajan, Carnegie Mellon University,
Department of Materials Science and Engineering, Pittsburgh, PA.
9:00 A.M. *BB1.2/S1.2
GROWTH VIA MOCVD AND CHARACTERIZATION OF GaN(0001) AND AlxGa1-xN (0001) ALLOYS
FOR OPTOELECTRONIC AND MICROELECTRONIC DEVICE APPLICATIONS, Robert F. Davis,
T.W. Weeks Jr., M.D. Bremser, S.K. Ailey and W.G. Perry, North Carolina State
University, Department of Materials Science and Engineering, Raleigh, NC.
9:30 A.M. *BB1.3/S1.3
ELECTRONIC AND OPTOELECTRONIC DEVICES BASED ON THE AlGaN MATERIAL SYSTEM, M.
Asif Khan, APA Optics, Minneapolis, MN.
10:00 A.M. BREAK
10:30 A.M. *BB1.4/S1.4
A FETISH FOR GALLIUM ARSENIDE, Andrew R. Barron, Rice University, Department of
Chemistry, Houston, TX.
11:00 A.M. *BB1.5/S1.5
LOW TEMPERATURE MOCVD GROWTH OF V/VI MATERIALS VIA A Me3SiNMe2 ELIMINATION
REACTION, T.J. Groshens, R.W. Gedridge Jr. and C.K. Lowe-Ma, Naval Air Warfare
Center Weapons Division, Research and Technology Division, Chemistry and
Materials Branch, China Lake, CA.
11:30 A.M. BB1.6/S1.6
MOCVD OF SrS:Ce,M THIN FILMS FOR ELECTROLUMINESCENT FLAT PANEL DISPLAYS, John
A. Samuels, David C. Smith, Kerry Siebein, Los Alamos National Laboratory, Los
Alamos, NM; Richard T. Tuenge, Christian F. Schaus and Christopher N. King,
Planar Systems, Inc. Beaverton, OR.
11:45 A.M. BB1.7/S1.7
MOCVD OF THE BLUE ELECTRO-LUMINESCENT PHOSPHOR CaGa2S4:Ce FROM A LIQUID REAGENT
DELIVERY SYSTEM, T.S. Moss, R.C. Dye, D.C. Smith, J.A. Samuels, Los Alamos
National Laboratory, Los Alamos, NM; M.J. Delarosa and C.F. Schaus, Planar
Systems, Inc., Beaverton, OR.
SESSION BB2: PRECURSOR CHEMISTRY
Chair: P.C. Van Buskirk
Monday Afternoon, November 27
Hampton (S)
1:30 P.M. *BB2.1
MOCVD ROUTES TO THIN FILMS FOR SUPERCONDUCTING ELECTRONICS AND OTHER
APPLICATIONS: PRECURSOR SYNTHESIS AND FILM PROCESSING ISSUES, Tobin J. Marks,
Northwestern University, Department of Chemistry, Evanston, IL.
2:00 P.M. *BB2.2
FROM PROPOSAL TO PRODUCT: SCALING UP THE CHEMICAL SYNTHESIS OF MOCVD OXIDE
PRECURSORS, Tim Leedham, Inorgtech Ltd., Suffolk, United Kingdom.
2:30 P.M. BREAK
3:00 P.M. BB2.3
GROUP III-VI PRECURSORS: WHAT CONTROLS THEIR VOLATILITY?, Edward G. Gillan,
Sarah L. Stoll, C. Jeff Harlan and Andrew R. Barron, Rice University, Chemistry
Department and Department of Mechanical Engineering and Materials Science,
Houston, TX.
3:15 P.M. *BB2.4
CHEMICAL VAPOR DEPOSITION OF OXIDES FROM ALKOXIDES AN OVERVIEW OF DEPOSITION
REACTION SCHEMES, Ren Xu, University of Utah, Department of Materials Science
and Engineering, Salt Lake City, UT.
3:45 P.M. BB2.5
GROWTH OF HETEROEPITAXIAL Si1-x-yGexCy ALLOYS ON SILICON USING NOVEL DEPOSITION
CHEMISTRY, Michael Todd, Phillip Matsunaga, John Kouvetakis, Arizona State
University, Department of Chemistry and Biochemistry, Tempe, AZ; and David J.
Smith, Arizona State University, Department of Physics and Astronomy, Tempe,
AZ.
4:00 P.M. BB2.6
DEVELOPMENT OF NOVEL NICKEL(ß-DIKETONATE)2.LIGAND COMPLEXES AS PRECURSORS
FOR MOCVD OF NICKEL AND NICKEL OXIDE, Carel I.M.A. Spee, Hans L. Linden, Adri
Mackor, Klaas Timmer and Harry A. Meinema, TNO-Institute of Applied Physics,
Department of Inorganic Materials Chemistry, Eindhoven, Netherlands.
4:15 P.M. BB2.7
GROUP 2 ELEMENT COMPLEXES BASED ON ß-DIKETONATE LIGANDS AS PRECURSORS FOR
CERAMIC MATERIALS, Henry A. Luten III and William S. Rees Jr., The Georgia
Institute of Technology, School of Chemistry and Biochemistry, School of
Materials Science and Molecular Design Institute, Atlanta, GA.
4:30 P.M. BB2.8
PREPARATION OF (PB, LA)TIO3 FILMS BY METALORGANIC CHEMICAL VAPOR DEPOSITION
WITH NEW LANTHANUM PRECURSORS, Deborah A. Neumayer, William F. Kane and Alfred
R. Gill, IBM T.J. Watson Research Center, Yorktown Heights, NY.
4:45 P.M. BB2.9
RECENT ADVANCES IN GROUP 2 ELEMENT-CONTAINING PRECURSORS FOR CVD OF METAL
OXIDES AND SULFIDES, Michael B. Hursthouse, Cardiff University, School of
Chemistry, Wales, United Kingdom; Henry A. Luten, Georgia Institute of
Technology, School of Chemistry and Biochemistry, School of Materials Science,
Atlanta, GA; K.M. Abdul Malik, Cardiff University, School of Chemistry, Wales,
United Kingdom; David J. Otway and William S. Rees Jr., Georgia Institute of
Technology, School of Chemistry and Biochemistry, School of Materials Science,
Atlanta, GA.
SESSION BB3: ELECTROPTIC AND
FERROELECTRIC CERAMICS
Chair: David Beach
Tuesday Morning, November 28
Hampton (S)
9:00 A.M. *BB3.1
BaTiO3 THIN FILMS FOR ELECTRO-OPTIC AND NON-LINEAR OPTICAL APPLICATIONS, B.W.
Wessels, Northwestern University, Department of Materials Science and
Engineering, Evanston, IL.
9:30 A.M. BB3.2
PREPARATION OF SrTiO3 THIN FILMS USING ECR PLASMA ASSISTED MOCVD, J.S. Lee,
H.W. Song, D.S. Yoon, B.H. Jeon, Korea Advanced Institute of Science and
Technology, Department of Materials Science and Engineering, Taejon, Korea;
B.G. Yu, Electronics and Telecommunication Research Institute, Taejon, Korea;
W.J. Lee and K. No, Korea Advanced Institute of Science and Technology,
Department of Materials Science and Engineering, Taejon, Korea.
9:45 A.M. BB3.3
CHARACTERISTICS OF FERROELECTRIC PZT THIN FILMS PREPARED BY ECR PECVD, Jae-Whan
Kim, Kwangsoo No, Won-Jong Lee and Dang-Moon Wee, KAIST, Department of
Materials Science and Engineering, Taejon, Korea.
10:00 A.M. BREAK
10:30 A.M. BB3.4
ELECTRICAL PROPERTIES OF (Pb,La)TiO3 THIN FILMS BY ECR-PECVD, Sung-Woong Chung,
Kwangsso No and Won-Jong Lee, Korea Advanced Institute of Science and
Technology, Department of Materials Science and Engineering, Taejon, South
Korea.
10:45 A.M. BB3.5
PREPARATION AND CHARACTERIZATION OF PZT/RuO2/YSZ/Si MULTILAYERS, G.R. Bai, C.M.
Foster, R. Jammy, J. Vetrone and Z. Li, Argonne National Laboratory, Materials
Science Division, Argonne, IL.
11:00 A.M. BB3.6
THE MICROSTRUCTURE AND PROPERTIES OF LAYERED OXIDE THIN FILMS MADE BY MOCVD
TECHNIQUES, Tingkai Li, Yougfei Zhu, Seshu B. Desu, VPI and SU, Department of
Materials Science and Engineering, Blacksburg, VA; Chien-Hsiung Peng, Ceram
Inc., Colorado Springs, CO; and Masaya Nagat, Sharp Corporation, Chiba,
Japan.
11:15 A.M. BB3.7
PREPARATION AND PROPERTIES OF FERROELECTRIC Bi2SrTa2O9 THIN FILMS FOR FERAM
USING FLASH-MOCVD, T. Ami, K. Hironaka, Sony Research Center, Yokohama, Japan;
C. Isobe, N. Nagel, M. Sugiyama, Sony Research Center, Yagi Research Labs,
Yokohama, Japan; Y. Ikeda, Sony Research Center, Center for Materials Analysis,
Yokohama, Japan; K. Watanabe, A. Machida and K. Miura, Sony Research Center,
Yokohama, Japan.
11:30 A.M. BB3.8
THE MICROSTRUCTURE OF STRONTIUM-BISMUTH TANTALATE FILMS, C.D. Gutleben, Y.
Ikeda, C. Isobe, A. Machida, T. Ami, K. Hironaka and E. Morita, Sony
Corporation Research Center, Yokohama, Japan.
11:45 A.M. BB3.9
DOMAIN STRUCTURE STUDY OF PbTiO3 THIN FILMS GROWN BY MOCVD, Robert Scott
Batzer, Bi-Ming Yen and Haydn Chen, University of Illinois at Urbana-Champaign,
Department of Materials Science and Engineering, Urbana, IL.
SESSION BB4: PRECURSOR DELIVERY
Chair: S. Desu
Tuesday Afternoon, November 28
Hampton (S)
1:30 P.M. *BB4.1
APPLICATIONS OF SOLID-SOURCE MOCVD TO PHOTONIC, MAGNETORESISTIVE,
ELECTROLUMINESCENT, AND PIEZOELECTRIC CERAMIC THIN FILMS, R. Hiskes and S.A.
DiCarolis, Hewlett-Packard Laboratories, Palo Alto, CA.
2:00 P.M. *BB4.2
GROWTH AND CHARACTERIZATION OF REFRACTORY OXIDES OBTAINED BY A NEW, COMPUTER
DRIVEN CVD SOURCE, F. Felten, S. Pignard, J.P. Sénateur, F. Weiss, R.
Madar, L.M.G.P., ENS de Physique, St. Martin d'Hères, France; and A.
Abrutis, Vilnius University, Department of Chemistry, Vilnius, Lithuania.
2:30 P.M. BB4.3
LIQUID SOURCE MOCVD OF HIGH QUALITY YBa2Cu3O7-x FILMS ON POLYCRYSTALLINE AND
AMORPHOUS SUBSTRATES, Dan Studebaker, Galina Doubinana and Jiming Zhang,
Advanced Technology Materials, Inc., Danbury, CT.
2:45 P.M. BB4.4
LIQUID DELIVERY MOCVD OF FERROELECTRIC THIN FILMS, J.F. Roeder, B.A. Vaartstra,
P.C. Van Buskirk, Advanced Technology Materials, Inc., Danbury, CT; and H.
Beratan, Texas Instruments, Dallas, TX.
3:00 P.M. BREAK
SESSION BB5: PROCESS ANALYSIS AND CHARACTERIZATION
Chair: S. Desu
Tuesday Afternoon, November 28
Hampton (S)
3:30 P.M. *BB5.1
THERMODYNAMIC ANALYSIS, A USEFUL TOOL FOR MOCVD, C. Bernard, INPG-ENSEEG-LTPCM,
St. Martin d'Heres, France; F. Weiss and R. Madar, INPG-ENSPG-LMGP, St. Martin
d'Heres, France.
4:00 P.M. BB5.2
MOCVD HTSC PRECURSOR DELIVERY MONITORED BY UV SPECTROSCOPY, Brian J. Rappoli
and William J. DeSisto, Naval Research Laboratory, Washington, DC.
4:15 P.M. BB5.3
APCVD - IN-SITU GROWING AND INVESTIGATION OF ELECTROCHROMIC WO3 FILMS, K.A.
Gesheva, G. Stoyanov, D. Gogova, Central Laboratory of Solar Energy and New
Energy Sources at Bulgarian Academy of Sciences, Sofia, Bulgaria.
4:30 P.M. BB5.4
KINETIC AND MECHANISTIC STUDIES OF THE THERMAL DECOMPOSITION OF
TETRAETHOXYSILANE (TEOS), Carmela Amato-Wierda, Michael R. Zachariah and Donald
R.F. Burgess Jr., National Institute of Standards and Technology, Process
Measurements Division, Gaithersburg, MD.
4:45 P.M. BB5.5
A STUDY ON THE THERMAL DECOMPOSITION OF Ba(tmhd)2 AND Sr(tmhd)2, Hyun-Kyu Ryu,
Jae Hyun Han and Sang Heup Moon, Seoul National University, Department of
Chemical Engineering, Seoul, Korea.
SESSION BB6: POSTER SESSION
Tuesday Evening, November 28
8:00 P.M.
Grand Ballroom (S)
BB6.1 THE PROPERTIES OF GaInAsSb/GaSb HETEROSTRUCTURE GROWN BY MOCVD AND
p-GaInAsSb/n-GaSb PHOTODIODES, Baolin Zhang, Yixin Jin, Tianming Zhou, Hong
Jiang, Yongqiang Ning, Changchun Institute of Physics, Chinese Academy of
Sciences, Changchun, China.
BB6.2 MOCVD GROWTH OF GaxIn1-xAs1-ySby and GaxIn1-xSb ALLOYS: EFFECTS OF
GROWTH PARAMETERS ON THEIR SOLID COMPOSITIONS, Baolin Zhang, Tianming Zhou,
Hong Jiang, Yongqiang Ning, Yixin Jin, Changchun Institute of Physics, Chinese
Academy of Sciences, Changchun, China.
BB6.3 ADVANCED INTERACTIVE PERSONAL COMPUTER-BASED PROCESS CONTROL SYSTEMS
FOR OXIDE MOCVD SYSTEMS, G.S. Tompa, I.H. Murzin, G.S. Tompa, D. Shen, C.
Zhang, Structured Materials Industries, Inc., Piscataway, NJ; B. Gallois,
Stevens Institute of Technology, Hoboken, NJ; S. Laing, C.R. Gorla and Y. Chen,
Rutgers University, Piscataway, NJ.
BB6.4 EFFECTS OF LANTHANUM ON PROPERTIES OF (Pb,La)TiO3 THIN FILMS BY
LP-MOCVD, Seaung-Suk Lee, Hyundai Electronics, Department of Materials Science
and Engineering, Taejon, Korea; and Ho-Gi Kim, KAIST, Department of Materials
Science and Engineering, Taejon, Korea.
BB6.5 REPRODUCIBLE GROWTH OF HIGHLY ORIENTED (001) YSZ FILMS ON AMORPHOUS
SiO2 SUBSTRATE BY MOCVD, G. Doubinina and G. Stauf, Advance Tech. Mater. Inc.,
Danbury, CT.
BB6.6 SILICON NITRIDE TOOLS COATED WITH TIC OR TIN COMPOSITE DIAMOND
STRUCTURES, W.D. Fan, K. Jagannadham and J. Narayan, North Carolina State
University, Department of Materials Science and Engineering. Raleigh, NC.
BB6.7 MOCVD OF VERY THIN FILMS OF LEAD LANTHANUM TITANATE, D.B. Beach, Oak
Ridge National Laboratory, Chemical and Analytical Sciences Division, Oak
Ridge, TN.
BB6.8 HIGH-QUALITY BAF2-FREE YBa2Cu3O7- FILMS DEPOSITED AT LOW TEMPERATURE
BY MOCVD USING FLUORINATED BARIUM ß-DIKETONATE PRECURSOR, D. Bruce
Buchholz, James Lei, Daniel Studebaker, Bruce Hinds, Tobin J. Marks, Carl
Kannewurf and R.P.H. Chang, Northwestern University, NSF Science and Technology
Center for Superconductivity, Evanston, IL.
BB6.9 THE MECHANISM RESPONSIBLE FOR THE INFLUENCE OF Fe, Co AND Ni ON
CHEMICAL VAPOR DEPOSITION OF TITANIUM CARBIDE, Igor Yu. Konyashin, Hard and
Refractory Metals Research Institute, Moscow, Russia.
BB6.10 CVD MADE SILICON CARBIDE BULK CERAMIC, Yang Xiuchum, Zhu Weizhong and
Ding Zishang, Zhejiang University, Department of Materials Science and
Engineering, Zhejiang Province, China.
BB6.11 THE SYNTHESIS OF BCN COMPOUND FILM BY PYROLYSIS CVD OF
DIMETHYLAMINORBORANE, Masahiro Mieno, Tadao Sato, Motohiko Isii and Hirohisa
Ando, National Institute for Research in Inorganic Materials, Tsukuba City,
Japan.
BB6.12 THE PREPARATION AND CHARACTERIZATION OF LITHIUM COBALT OXIDE THIN
FILMS BY CHEMICAL VAPOR DEPOSITION, Leo T. Kenny, Richard C. Breitkopf and
Terry E. Haas, Tufts University, Department of Chemistry, Medford, MA.
SESSION BB7: OXIDE CERAMICS; PLASMA ASSISTED CVD
Chair: S. Desu
Wednesday Morning, November 29
Hampton (S)
9:00 A.M. BB7.1
MOCVD OF CONDUCTIVE OXIDES ON SILICON MICROHOTPLATE ARRAYS FOR USE IN GAS
SENSING APPLICATIONS, F.DiMeo Jr., S. Semancik, R.E. Cavicchi, J.S. Suehle and
P. Chaparala, National Institute of Standards and Technology, Gaithersburg,
MD.
9:15 A.M. BB7.2
STUDY OF MICROSTRUCTURE AND GAS SENSING PROPERTIES OF TIN OXIDE THIN FILMS
PREPARED BY METAL ORGANIC CHEMICAL VAPOR DEPOSITION, Sang woo Lee, Donhang Liu,
Haydn Chen, University of Illinois, Department of Materials Science and
Engineering and Materials Research Laboratory, Urbana, IL; and D.D. Tsai,
Industrial Technology Research Institute, Materials Research Laboratories,
Taiwan, China.
9:30 A.M. BB7.3
METALORGANIC CHEMICAL VAPOR DEPOSITION OF THICK NiFe2O4 FERRITE FILMS, Y.Q. Li,
J.J. Green, J. Zhao, P. Norris, NZ Applied Technology, Woburn, MA; G.F. Dionne,
Massachusetts Institute of Technology, Lincoln Laboratory, Lexington, MA; and
P. Lubitz, Naval Research Laboratory, Washington, DC.
9:45 A.M. BB7.4
ROOM TEMPERATURE DEPOSITION OF HIGH DIELECTRIC CONSTANT, HIGH DENSITY CERAMIC
THIN FILMS, K. Chen, M. Nielsen, S. Soss, S. Liu, E. Rymaszewski and T.-M. Lu,
Rensselaer Polytechnic Institute, Center for Integrated Electronics and
Electronics Manufacturing, Troy, NY.
10:00 A.M. BREAK
10:30 A.M. BB7.5
HIGH RATE PHOTO-ASSISTED MOCVD GROWTH OF YBCO THICK FILMS, Q. Zhong, P.C. Chou
and A. Ignatiev, University of Texas, Space Vacuum Epitaxy Center and Texas
Center for Superconductivity, Houston, TX.
10:45 A.M. BB7.6
DEPOSITION OF THICK YBCO FILMS ON CURVED SURFACE, J. Shi, J.Z. Wu, A. Ray, A.
Gapud, B.W. Kang and S.H. Yun, University of Kansas, Department of Physics and
Astronomy, Lawrence, KS.
11:00 A.M. BB7.7
PLASMA-ENHANCED CVD OF ELECTROCHROMIC MATERIALS, C.I.M.A. Spee, J.L. Linden, G.
Kirchner, A.D. Kuypers, A. Mackor, H.A. Meinema, TNO-Institute of Applied
Physics, Department of Inorganic Materials Chemistry, Eindhoven, Netherlands;
F. Schulte J. Käppeler and H. Jürgensen, AIXTRON Semiconductor
Technologies GmbH, Aachen, Germany.
11:15 A.M. BB7.8
CHARACTERIZATION OF CARBON FILMS BASED ON CARBON, NITROGEN, AND HYDROGEN, H.
Efstathiadis, Z. Akkerman and F.W. Smith, City College of New York, Department
of Physics, New York, NY.
11:30 A.M. BB7.9
IMPROVEMENT OF PECVD-SiNx FOR TFT GATE INSULATOR BY CONTROLLING ION BOMBARDMENT
ENERGY, Yasuhiko Kasama, Tadahiro Ohmi, Tohoku University, Department of
Electrical Engineering, Sendai, Japan; Koich Fukuda, Hirobumi Fukui, Chisato
Iwasaki Frontec Inc., Sendai, Japan; and Shoichi Ono, ALPS Electric Co., Ltd.,
Sendai, Japan.
The following exhibitors have identified their products and services as
directly related to your research:
Products and Services
A&N Corporation
Alcatel Vacuum Products, Inc.
Aldrich Chemical Company
Alfa Aesar
Allied High Tech Products, Inc.
ASTeX/Applied Science & Technology, Inc.
Chemat Technology, Inc.
Digital Instruments
Edwards High Vacuum International
EMCORE Corporation
Huntington Mechanical Laboratories
Inorgtech, Ltd.
Instron Corporation
JCPDS-ICDD
LUXTRON Corporation
MKS Instruments, Inc.
Park Scientific Instruments
Philips Semiconductors/Materials Analysis Group
Plasmaterials, Inc.
Quesant Instrument Corporation
Schumacher
Solartron Instruments, Inc.
Staib Instruments, Inc.
VAT, Inc.
See page 6 for a list of companies exhibiting books and software and a complete
list of exhibitors.