1996 MRS Fall Meeting & Exhibit

Chairs

Robert Cammarata, Naval Research Laboratory
Eric Chason, Sandia National Laboratories
Theodore Einstein, University of Maryland
Ellen Williams, University of Maryland

Symposium Support

• Blake Industries, Inc.

* Invited paper

SESSION Cb1: KINETICS OF GROWTH
Chair: Robert C. Cammarata
Monday Morning, December 2, 1996
Salon F (M)

8:30 AM *Cb1.1 A VARIATIONAL APPROACH TO CRYSTALLINE TRIPLE JUNCTION MOTION, Jean E. Taylor, Rutgers Univ, Dept of Mathematics, Pisacatawy, NJ.

9:00 AM Cb1.2
PHASE TRANSFORMATION AND MICROSTRUCTURAL PROPERTIES IN SPUTTERED VS. CVD FILMS, Anthony G. Domenicucci, IBM Microelectronics, Hopewell Junction, NY; C. Dehm, Siemens AG, Hopewell Junction, NY; S. Loh, C. Dziobkowski, Hopewell Junction, NY; Larry A. Clevenger, Cyril Cabral, Christian Lavoie, J. Jordon-Sweet, IBM T.J. Watson Research Ctr, Yorktown Heights, NY.

9:15 AM Cb1.3
ATOMISTIC MODEL FOR THE DEVELOPMENT OF IN-PLANE TEXTURE DURING THIN FILM DEPOSITION, Oleh P. Karpenko, S. M. Yalisove, J. C. Bilello, Univ of Michigan, Dept of MS&E, Ann Arbor, MI.

9:30 AM *Cb1.4
NUCLEATION AND GROWTH CRYSTALLIZATION KINETICS IN A GROWING AMORPHOUS FILM, John W. Cahn, NIST, Dept of MS&E, Gaithersburg, MD.

10:00 AM BREAK

SESSION Cb2: GRAIN GROWTH
Chairs: Katy Barmak and Jean E. Taylor
Monday Morning, December 2, 1996
Salon F (M)

10:30 AM *Cb2.1
TEXTURE AND STESS EVOLUTION IN POLYCRYSTALLINE THIN FILMS, Carl V. Thompson, Steve C. Seel, MIT, cambridge, MA.

11:15 AM Cb2.3
IN-SITU STM STUDIES OF GRAIN GROWTH KINETICS IN A TWO-DIMENSIONAL MODEL SYSTEM, Robert Q. Hwang, Norm C. Bartelt, Andreas K. Schmid, Sandia National Laboratories, Livermore, CA.

11:30 AM Cb2.4
LATERAL GRAIN GROWTH IN POLY-Si FILMS BY GAS FLAME HIGH TEMPERATURE ANNEALING, Weifeng Qu, Akio Kitagawa, Y. Masaki, Masakuni Suzuki, Kanazawa Univ, Dept of Electrical & Computer Engr, Ishikawa, JAPAN.

11:45 AM Cb2.5
COMPETITIVE MOTIONS OF GRAIN-BOUNDARY AND FREE SURFACE IN SELECTING THIN FILM MORPHOLOGY, B. Sun, Univ of California-S Barbara, Dept of Mech & Environmental Engr, Santa Barbara, CA; Zhigang Suo, Univ of California-S Barbara, Dept of Mech & Enviro Engr, Santa Barbara, CA; W. Yang, Tsinghua Univ, Dept of Engineering Mechanics, Beijing, CHINA.

SESSION Cb3: INSTABILITIES, SEGREGATION, AND ORDERING
Chairs: Jerrold A. Floro and David J. Srolovitz
Monday Afternoon, December 2, 1996
Salon F (M)

1:30 PM *Cb3.1
MICROSTRUCTURAL STABILITY OF MULTILAYER FILMS, David J. Srolovitz, N. Sridhar, Univ of Michigan, Dept of MS&E, Ann Arbor, MI.

2:00 PM Cb3.2
MICROSTRUCTURAL AND OPTICAL PROPERTIES OF THE SYSTEM Ga In P/GaAs(001), A. Ashkenazi-Goldner, Y. Komen, Technion-Israel Inst of Tech, Dept of Materials Engr, Haifa, ISRAEL; J. Salzman, Technion-Israel Inst of Tech, Solid State Inst, Haifa, ISRAEL.

2:15 PM Cb3.3
DOMAIN STRUCTURE AND TRANSIENT PHOTOCONDUCTIVITY IN ATOMICALLY ORDERED Ga In As EPITAXIAL FILMS, S. Phillip Ahrenkiel, Richard K. Ahrenkiel, Douglas J. Arent, National Renewable Energy Laboratory, Golden, CO.

2:30 PM Cb3.4
COMPOSITIONAL STABILITY OF ALLOY THIN FILMS, Jonathan E. Guyer, Scott A. Barnett, Peter W. Voorhees, Northwestern Univ, Dept of MS&E, Evanston, IL.

2:45 PM Cb3.5
STRUCTURE AND MORPHOLOGY OF MBE FABRICATED Zn Fe Se ON GaAs SUBSTRATES AS A FUNCTION OF SUBSTRATE ORIENTATION AND GROWTH TEMPERATURE, Hsiang-Yi Wei, Univ of Maryland, Dept of Materials Engr, College Park, MD; Lourdes Salamanca-Riba, Univ of Maryland, Dept of Matls & Nuclear Engr, College Park, MD; Jay Smathers, B. T. Jonker, Naval Research Laboratory, Washington, DC.

3:00 PM BREAK

3:30 PM *Cb3.6
REAL TIME MEASUREMENTS OF STRAIN EVOLUTION DURING THIN FILM HETEROEPITAXY, Jerrold A. Floro, Sandia National Laboratories, Org 1112, Albuquerque, NM; Eric H. Chason, Sandia National Laboratories, Org 1112 , Albuquerque, NM.

4:00 PM Cb3.7
MICROSCOPIC MECHANISMS OF SURFACE SEGREGATION: Sn DOPED GaAs(100) , Sean M. Seutter, Philip I. Cohen, Amir M. Dabiran, Univ of Minnesota, Dept of Electrical Engr, Minneapolis, MN.

4:15 PM Cb3.8
STRUCTURAL CHANGES OF Sb AND Ge ON Si(100) DURING SURFACTANT-MEDIATED GROWTH , Allison A. Bailes, Univ of Florida, Dept of Physics, Gainesville, FL; Mark A. Boshart, Univ of Florida, Gainesville, FL; Janae S. Adams, L. Elizabeth Seiberling, Univ of Florida, Dept of Physics, Gainesville, FL.

4:30 PM Cb3.9
Pb INDUCED LAYER-BY-LAYER GROWTH AND THE DEPENDENCE ON AN AMOUNT OF THE SURFACTANT IN THE GROWTH OF Ni on Ni(100) SURFACE, Mizuki Iwanami, Masao Kamiko, Tatsuhiko Matsumoto, Ryoichi Yamamoto, Univ of Tokyo, Inst of Industrial Science, Tokyo, JAPAN.

4:45 PM Cb3.10
A MOLECULAR DYNAMICS SIMULATION ON THIN FILM FORMATION PROCESS OF SUFACTANT-MEDIATED GROWTH, Yasushi Sasajima, Ibaraki Univ, Faculty of Engineering, Ibaraki, JAPAN; Akira Iijima, Satoru Ozawa, Ibaraki Univ, Hitachi Ibaraki, JAPAN; Yoshio Hiki, Tokyo Inst of Technology.

SESSION Cb4: POSTER SESSION I
Chairs: Robert C. Cammarata Eric H. Chason Theodore L. Einstein and Ellen D. Williams
Monday Evening, December 2, 1996
8:00 P.M.
Grand Ballroom/Constitution (S)

Cb4.1
SUBSTRATE CURVATURE CHANGE DUE TO MORPHOLOGICAL INSTABILITY OF A STRAINED EPITAXIAL SURFACE FILM, F. Jonsdottir, Hibbitt, Karlsson & Sorensen Inc, Pawtucket, RI; L. B. Freund, Brown Univ, Engineering Div, Providence, RI.

Cb4.2
A STUDY ON METAL INDUCED LATERAL CRYSTALLIZATION BEHAVIOR OF AMORPHOUS SILICON THIN FILMS, Byung-ll Lee, Kwang-Ho Kim, Seoul National Univ, Dept of MS&E, Seoul, SOUTH KOREA; Won-Cheol Jeong, Seoul National Univ, Seoul, SOUTH KOREA; Pyung-Su Ahn, Jin-Wook Shin, Seung-Ki Joo, Seoul National Univ, Dept of MS&E, Seoul, SOUTH KOREA.

Cb4.3
KINETICS OF CRYSTALLIZATION OF AMORPHOUS PZT FILMS DURING RAPID THERMAL ANNEALING annealing., Vladimir Ya. Shur, Ural State Univ, Inst Physics & Applied Mathematics, Ekaterinburg, RUSSIA; Susan Trolier-McKinstry, Pennsylvania State Univ, Dept of MS&E, University Park, PA; Alexander L. Subbotin, Stanislav A. Negashev, Ural State Univ, Inst Physics & Applied Math, Ekaterinburg, RUSSIA; Ekaterina A. Borisova, Ural State Univ, Institute Physics & Applied , Ekaterinburg, RUSSIA.

Cb4.4
UNUSUAL PHENOMENON OF INTERNAL LATTICE BENDING FOR AMORPHOUS-CRYSTALLINE TRANSFORMATIONS IN THIN FILMS, Vladimir Yu. Kolosov, Ural State Univ, Dept of Engineering, Ekaterinburg, RUSSIA.

Cb4.5
THICKNESS OR GRAIN SIZE, WHICH IS THE PRIMARY FACTOR DETERMINING THE ELECTRICAL PROPERTIES OF POLYCRYSTALLINE FERROELECTIC THIN FILMS?, Xiaobing (S.B.) Ren, Univ of Tsukuba, Inst of Materials Science, Ibaraki , JAPAN; Caojing Lu, H. M. Shen, Y. N. Wang, Nanjing Univ, Solid State Microstructures Lab, Nanjing, CHINA.

Cb4.6
X-RAY CHARACTERISTICS OF THE EFFECT OF GRAIN SIZE ON DOMAIN STRUCTURE IN POLYCRYSTALLINE , Xiaobing (S.B.) Ren, Univ of Tsukuba, Inst of Materials Science, Ibaraki , JAPAN; Y. N. Wang, Caojing Lu, H. M. Shen, Nanjing Univ, Solid State Microstructures Lab, Nanjing, CHINA.

Cb4.7
STRUCTURAL AND SURFACES MORPHOLOGY CHANGES IN CuInSe THIN FILMS AS A FUNCTION OF Cu/In RATIO, Paul J. Fons, Akimasa Yamada, MIT, Electrotechnical Lab, Ibaraki, JAPAN; Douglas J. Tweet, Electrotechnical Laboratory, Physical Science Div,; Shigeru Niki, Electrotechnical Laboratory, Optoelectronics Div, Ibaraki, JAPAN.

Cb4.8
EFFECTS OF THE ADDITION OF HEAVY- RARE- EARTH ELEMENTS ON THE STRUCTURES AND RESISTIVITIES OF Al THIN FILMS, Shinji Takayama, Hosei Univ, Dept of Electrical Engr, Koganei, JAPAN; Kentaro Tobimatsu, Hosei Iiyori, Tosiaki Arai, IBM Japan Ltd, Yamato Dev Lab, Kanagawa, JAPAN; Naganori Tsutui, ITES Co Ltd, Shiga, JAPAN.

Cb4.9
MICROSTRUCTURE EVOLUTION AND INFLUENCE ON RESISTIVITY OF FILMS, J. Vetrone, Argonne National Laboratory, Materials Science Div, Argonne, IL; C. Foster, Argonne National Laboratory, Material Science Div, Argonne, IL; G. Bai, Argonne National Laboratory, Matls Science Div, Argonne, IL.

Cb4.10
DOMAIN BOUNDARIES AND TWINS IN TiN FILMS EPITAXIALLY GROWN ON SAPPHIRE AND SILICON, Katharine Dovidenko, Serge Octyabrsky, R. D. Vispute, Jagdish Narayan, North Carolina State Univ, Dept of MS&E, Raleigh, NC.

Cb4.11
GENERATION AND SUPPRESSION OF STACKING FAULTS IN GaP LAYERS GROWN ON Si(100) SUBSTRATES BY MOLECULAR BEAM EPITAXY AND MIGRATION ENHANCED EPITAXY, Yasufumi Takagi, Hiroo Yonezu, Katsuya Samonji, Takuto Tsuji, Toyohashi Univ of Technology, Dept of Electrical & Electronic Engr, Aichi, JAPAN.

Cb4.12
INFLUENCE OF SUBSTRATE MISORIENTATION ON FACET FORMATION IN SELECTIVE AREA METALORGANIC CHEMICAL VAPOR DEPOSITION, Hyunchol Shin, Young-Se Kwon, KAIST, Dept of Electrical Engr, Taejon, SOUTH KOREA.

Cb4.13
STABILITY OF POLY-TiN/Ti/POLY-TiN AND POLY-TiN/Ti/TiN(100) STRUCTURES DURING THERMAL ANNEALING, G. Ramanath, Univ of Illinois-Urbana, Dept of Materials Science, Urbana, IL; Johan R.A. Carlsson, Univ of Illinois-Urbana, Dept of Thin Film Physics, Urbana, IL; I. Petrov, Joseph E. Greene, Leslie H. Allen, Univ of Illinois-Urbana, Dept of MS&E, Urbana, IL.

Cb4.14
THERMAL STABILITY OF VARIOUS ELECTRODE STRUCTURES FOR FERROELECTRIC CAPACITORS, Yoo-Chan Jeon, Jeong-Min Seon, Jae-Hyun Joo, Ki-Young Oh, Jae-Sung Rho, LG Semicon Co Ltd, Process Group, Heungduk-gu Cheongju, SOUTH KOREA; Jae-Jeong Kim, LG Semicon Co Ltd, Adv Technology R&D Lab, Cheongju-si, SOUTH KOREA; Dae-Sik Kim, LG Semicon Co Ltd, Advanced Analytical Tech Group, Cheongju, SOUTH KOREA.

Cb4.16
NICKEL FERRITE THIN-FILMS FORMED BY SOLID-STATE REACTION, Paul G. Kotula, Los Alamos National Laboratory, Ctr for Materials Science, Los Alamos, NM; Matthew T. Johnson, Univ of Minnesota, Dept of Chemical Engr & Matls Science, Minneapolis, MN; C. Barry Carter, Univ of Minnesota, Dept of CE&MS, Minneapolis, MN.

Cb4.17
IN-SITU X-RAY DIFFRACTION ANALYSIS OF TiSi PHASE FORMATION FROM A TITANIUM-MOLYBDENUM BILAYER, Cyril Cabral, Larry A. Clevenger, James M.E. Harper, Ron A. Roy, Katherine L. Saenger, IBM T.J. Watson Research Ctr, Yorktown Heights, NY; Glen L. Miles, Randy W. Mann, IBM Microelectronics, Essex Junction, VT.

Cb4.18
PROTECTIVE FILMS FORMED DURING THE ETCHING OF AND IN F-BASED PLASMAS, M. R. Baklanov, IMEC VZW, Dept of ASP/VMT, Leuven, BELGIUM; S. Vanhaelemeersch, W. Storm, W. Vandervorst, Karen Maex, IMEC VZW, Leuven, BELGIUM.

Cb4.19
EFFECTS OF REACTIVE GAS COMPOSITIONS ON THE MAGNETIC PROPERTIES AND MICROSTRUCTURES OF FeTaX (X=N, C) NANOCRYSTALLINE THIN FILMS, Tae-Hyuk Koh, Hong-Ik Univ, Dpet ME&MS, Seoul, SOUTH KOREA; Dong-Hoon Shin, Hong-Ik Univ, Dept of MS&MS, Seoul, SOUTH KOREA; Dong-Hoon Ahn, LG Electronic Research Center, Image & Media Lab, Seoul, SOUTH KOREA; Hyoung-June Kim, Seoung-Fui Nam, Hong-Ik Univ, Dept of ME&MS, Seoul, SOUTH KOREA.

Cb4.20
ALKOXIDE DERIVED SrBi Nb O PHASE PURE POWDERS AND THIN FILMS, D. Ramachandran, Rustum Roy, Amar S. Bhalla, Ruyan Guo, Pennsylvania State Univ, Materials Research Lab, State College, PA; L. E. Cross, Pennsylvania State Univ, Matls Research Lab, University Park, PA.

Cb4.21
SILICON -EDGE XANES STUDY OF PLATINUM SILICIDE THIN FILMS, Steven Natfel, T. K. Sham, Univ of Western Ontario, Dept of Chemistry, London, CANADA; D. X. Xu, Suhit R. Das, National Research Council, Inst of Microstructural Sci, Ottawa, CANADA.

Cb4.22
STRUCTURE AND MORPHOLOGY OF THIN WSi FILMS PREPARED BY RAPID THERMAL ANNEALING, George D. Beshkov, D. B. Dimitrov, J. Koprinarova, K. Gesheva, D. Gogova, Inst of Solid State Physics, BAS, Sofia, BULGARIA.

Cb4.23
RADIOCHROMIC SMART THIN-FILM SENSOR, Chun-Keng Hsu, Univ of Maryland, Dept of Matls & Nuc Engr, College Park, MD; Mohamad Al-Sheikhly, Univ of Maryland, Dept of M&NE, College Park, MD; William L. McLaughlin, Univ of Maryland, Dept of Matls & Nuc Engr, College Park, MD; Aris Christou, Univ of Maryland, Dept of Materials Engr, College Park, MD.

Cb4.24
SURFACE PHOTOVOLTAIV INVESTIGATIONS ON COPPER PHTHALOCYANINE / Q-CdS FILMS, Baohul Wang, Jizhou Wu, Daqing Petroleum Inst, Safety Protection Inst, Heilongliang, CHINA.

Cb4.25
ESTIMATION OF MINIMUM LIQUIDUS FREE ENERGY CONCENTRATION FOR SILICIDE AND GERMANIDE SYSTEMS, Hyoung G. Nam, N. Cho, Sun Moon Univ, Dept of Electronic Engr, Tangjeong-myun, KOREA.

Cb4.26
NANOCRYSTALLINE SNO2 THIN FILMS: MICROSTRUCTURE AND GROWTH MECHANISMS, Xiaoqing Pan, Max-Planck-Inst, Inst Werkstoffwissenschaft, Stuttgart, GERMANY.

Cb4.27
PHASE SELECTION BY COMPETITIVE GROWTH IN Ti/Al THIN FILM DIFFUSION COUPLES, S. Wohlert, GKSS-Research Center, Inst for Materials Research, Geesthacht, GERMANY; Carsten Michaelsen, GKSS-Research Center, Inst for Mater Res,; R. Bormann, GKSS-Research Center, Inst for Materials Research, Geesthacht, GERMANY.

Cb4.28
SINTERING OF ALUMINA AEROGEL FILMS AND MONOLITHS, Gideon S. Grader, Keysar Shani, Gennady E. Shter, Technion-Israel Inst of Tech, Dept of Chemical Engr, Haifa, ISRAEL; Yachin Cohen, Technion-Israel Inst of Tech, Haifa, ISRAEL; Y. De Hazan, Technion-Israel Inst of Tech, Dept of Chemical Engr, Haifa, ISRAEL.

Cb4.29
THE EFFECT OF GROWTH TEMPERTATURE ON ATOMIC ORDERING IN GaInP EPILAYERS GROWN ON GaAs (001) SUBSTRATES BY GAS-SOURCE MOLECULAR BEAM EPITAXY, Chanchana Meenakarn, Ann E Staton-Bevan, Imperial College, Dept of Materials, London, UNITED KINGDOM.

Cb4.30
CARRIER TRANSPORT IN ORDERED AND DISORDERED Ga In As THIN FILMS, Richard K. Ahrenkiel, S. Phillip Ahrenkiel, Douglas J. Arent, National Renewable Energy Laboratory, Golden, CO.

Cb4.31
STRUCTURE AND MAGNETIC PROPERTIES OF EPITAXIAL ORDERED FePd (001) THIN FILMS, Veronique Gehanno, Alain Marty, CEA Grenoble, DRFMC/SP2M/NM, Grenoble, FRANCE; Bruno Gilles, CEA Grenoble, Centre d'Etudes Nucleaires, Grenoble, FRANCE; Yves Samson, CEA Grenoble, DRFMC/SP2M/NM, Grenoble, FRANCE.

Cb4.32
MICROSTRUCTURE OF COMPOSITIONALLY MODULATED InGaAs, R. D. Twesten, Sandia National Laboratories, Dept of Semiconductor & Nanostructure Physics, Albuquerque, NM; A. Mascarenhas, National Renewable Energy Laboratory,; E. D. Jones, Joanna Mirecki-Millunchick, David M. Follstaedt, Sandia National Laboratories.

Cb4.33
LOW PRESSURE OMVPE GROWN COMPRESSIVE STRAINED InGaAs QWs SURROUNDED BY TENSILE STRAINED InGaAs SPACERS, Oleg A. Laboutine, Samsung Advanced Inst of Tech, Materials & Devices Research Ctr, Suwon, SOUTH KOREA; Ahn Goo Choo, Samsung Advanced Inst of Tech, Photonics Semiconductor Lab, Suwon, KOREA; Seong Heon Kim, Nam Heon Kim, Samsung Advanced Inst of Tech, Materials & Devices Research Ctr, Suwon, KOREA; Hyeongsoo Park, Samsung Advanced Inst of Tech, Materials 7 Devices Research Ctr, Suwon, KOREA; Yongjo Park, Tae II Kim, Samsung Advanced Inst of Tech, Materials & Devices Research Ctr, Suwon, KOREA.

Cb4.34
MEASUREMENT OF QUAZI-FERMI LEVELS IN QUANTUM-WELL LASERS, Joel M. Therrien, Univ of Massachusetts, Dept of Electrical Engr, Lowell, MA; A. K. Chin, Polaroid Corp, Microelectronics Lab, Norwood, MA; Sam Mil'shtein, Univ of Massachusetts, Dept of Electrical Engr, Lowell, MA.

Cb4.35
TITANIUM THIN FILMS ON 6H-SiC: THE INFLUENCE OF CARBON ON THE REACTION OF Ti WITH SILICON CARBIDE, Michael A. Capano, Air Force Wright Laboratory, WL/MLPO Materials Directorate, Wright Patterson AFB, OH; J. K. Patterson, W. S. Solomon, Wright Patterson AFB, Wright Lab/Matls Directorate, WPAFB, OH; S. D. Walck, Wright Patterson AFB, Wright Lab/Materials Directorate, WPAFB, OH.

Cb4.36
CHARACTERIZATION OF THIN FILMS USING IN-SITU GRAZING-INCIDENCE XRD, Mark Rodriguez, Sandia National Laboratories, Albuquerque, NM; Ralph J. Tissot, Timothy J. Boyle, Catherine D. Buchheit, Advanced Materials Laboratory, Albuquerque, NM; Michael O. Eatough, Sandia National Laboratories, Albuquerque, NM.

Cb4.37
CROSS-SECTIONAL TRANSMISSION ELECTRON MICROSCOPY OF SILICON-BASED NANOSTRUCTURES, Max V. Sidorov, Arizona State Univ, Ctr for Solid State Science, Tempe, AZ; David J. Smith, Arizona State Univ, Dept of Physics & Astronomy, Tempe, AZ.

Cb4.38
EFFECT OF PRETREATMENT ON MICROSTRUCTURE AND ELECTROMIGRATION OF Al Cu ALLOY, Y. C. Chuang, National Chiao Tung Univ, Hsinchu, TAIWAN; Y. J. Guo, National Tsing Hua Univ, Inst of Electrical Engrg, Hsinchu, TAIWAN, CHINA; F. S. Huang, National Tsing Hua Univ, Dept of Electrical Engr, Hsinchu, TAIWAN.

Cb4.39
ELECTRICAL PROPERTIES AND MICROSTRUCTURES OF Ni-Cr THIN FILMS, M. B. Vollaro, Advanced Technology Materials Inc, Danbury, CT; Donald I. Potter, Univ of Connecticut, Dept of Metallurgy & Matls Engr, Storrs, CT.

Cb4.40
TRANSIENT AND STEADY STATE PHOSPHORUS DOPING IN Si AND SiGe FILMS BY UHV-CVD, Jack O. Chu, K. Ismail, S. J. Koester, F. Cardone, B. S. Meyerson, IBM T.J. Watson Research Ctr, Yorktown Heights, NY.

Cb4.41
NANOCHARACTERIZATION OF TEXTURE AND HILLOCK FORMATION IN THIN Al AND Al-0.2%Cu FILMS FOR THIN-FILM TRANSISTOR, Hiroshi Takatsuji, IBM Japan Ltd, Dept of Display Technology, Shiga-ken, JAPAN; Satoshi Tsuji, Hiroaki Kitahara, IBM Japan Ltd, Display Technology, Kanagawa, JAPAN; Katsuhiro Tsujimoto, ITES Co Ltd, Shiga-ken, JAPAN; Kotaro Kuroda, Hiroyasu Saka, Nagoya Univ, Dept of Quantum Engr, Aichi-ken, JAPAN.

Cb4.42
IN SITU TEM CHARACTERIZATION OF WHISKERS ON Al ELECTRODES FOR THIN-FILM TRANSISTOR, Katsuhiro Tsujimoto, ITES Co Ltd, Shiga-ken, JAPAN; Satoshi Tsuji, IBM Japan Ltd, Display Technology, Kanagawa, JAPAN; Hiroyasu Saka, Kotaro Kuroda, Nagoya Univ, Dept of Quantum Engr, Aichi-ken, JAPAN; Hiroshi Takatsuji, IBM Japan Ltd, Dept of Display Technology, Shiga-ken, JAPAN; Yukinobu Suzuki, Nagoya Univ, Dept of Quantum Engr, Aichi-ken, JAPAN.

Cb4.43
FORMATION AND PROPERTIES OF ROUGHENED POLY-Si ELECTRODES FOR HIGH-DENSITY DRAMS, Han-Wen Liu, National Chiao Tung Univ, Inst of Electronics, Hsinchu, TAIWAN; Huang-Chung Cheng, National Chiao Tung Univ, Dept of Electrical Engr, Hsinchu, TAIWAN.

SESSION Cb5: QUANTUM DOTS AND WIRES
Chair: Eric H. Chason
Tuesday Morning, December 3, 1996
Salon F (M)

9:00 AM Cb5.1
STRAIN EFFECTS IN HETEROEPITAXIAL GROWTH: ISLAND AND DOT FORMATION KINETICS, David R.M. Williams, Australian National Univ, Research School of Phys Sci & Engr, Canberra, AUSTRALIA; Len M. Sander, Univ of Michigan, Dept of Physics, Ann Arbor, MI.

9:15 AM Cb5.2
SELF-ORGANIZATION OF Si Ge CLUSTERS IN Si Ge /Si SUPERLATTICES GROWN USING UHV-CVD, D. E. Savage, S. Nayak, Univ of Wisconsin-Madison, Materials Science Program, Madison, WI; J. S. Sullivan, J. L. Lin, Univ of Wisconsin-Madison, Matls Science Program, Madison, WI; Thomas F. Kuech, Univ of Wisconsin-Madison, Dept of Chemical Engr, Madison, WI; Max G. Lagally, Univ of Wisconsin-Madison, Dept of MS&E, Madison, WI.

9:30 AM Cb5.3
STRUCTURAL AND OPTICAL CHARACTERIZATION OF COMPOSITIONAL MODULATION IN InGaAs/InP AND InAlAs/InP, Joanna Mirecki-Millunchick, Sandia National Laboratories, Albuquerque, NM; R. D. Twesten, Sandia National Laboratories, Dept of Semiconductor & Nanostructure Physics, Albuquerque, NM; David M. Follstaedt, E. D. Jones, Sandia National Laboratories, Albuquerque, NM; S. Phillip Ahrenkiel, Y. Zhang, J. D. Perkins, H. M. Cheong, A. Mascarenhas, National Renewable Energy Laboratory, Golden, CO.

10:00 AM BREAK

SESSION Cb6a: SILICIDES I
Chairs: Lynne M. Gignac and Raymond T. Tung
Tuesday Morning, December 3, 1996
Salon F (M)

10:30 AM *Cb6a.1
IN SITU TEM ANALYSIS OF TiSi C49-C54 TRANSFORMATION DURING ANNEALING, Lynne M. Gignac, Vjekoslav Svilan, Larry A. Clevenger, Cyril Cabral, Christian Lavoie, IBM T.J. Watson Research Ctr, Yorktown Heights, NY.

11:00 AM Cb6a.2
SURFACE AND INTERFACIAL REACTIONS IN TiN/Ti/SiO /Si(100) STRUCTURES DURING WF EXPOSURE, G. Ramanath, Univ of Illinois-Urbana, Dept of Materials Science, Urbana, IL; Johan R.A. Carlsson, Univ of Illinois-Urbana, Dept of Thin Film Physics, Urbana, IL; Leslie H. Allen, Univ of Illinois-Urbana, Dept of MS&E, Urbana, IL; V. C. Hornback, D. J. Allman, Symbios Logic Inc, Colorado Springs, CO.

11:15 AM Cb6a.3
THE NUCLEATION OF CRYSTALLINE TiSi PHASES FROM AMORPHOUS TiSi LAYERS AND INTERLAYERS, Raymond T. Tung, Bell Labs, Lucent Technologies, Murray Hill, NJ; Kunihiro Fujii, Kuniko Kikuta, NEC Corporation, ULSI Device Dev Lab, Kanagawa, JAPAN; Shinichi Chikaki, Takamaro Kikkawa, NEC Corporation, ULSI Device Development Lab, Kanagawa, JAPAN.

11:30 AM Cb6a.4
STUDY ON THERMAL STABILITY OF THIN CoSi2 FILM, Zhiguang Gu, City Univ of Hong Kong, Dept of Physics & Matls Science, Hong Kong, CHINA; Paul K. Chu, City Univ of Hong Kong, Dept of Physical & Matls Science, Hong Kong, HONG KONG; Jin Liu, Guo-Bao Jiang, Guoping Ru, Bing-Zong Li, Fudan Univ, Dept of Electronic Engr, Shanghai, CHINA.

11:45 AM Cb6a.5
STRUCTURAL AND ELECTRICAL CHARACTERIZATION OF BILAYER BARRIER STRUCTURE, Guy Sade, Joshua Pelleg, Ben-Gurion Univ, Dept of Materials Engr, Beer Sheva, ISRAEL; Amir Grisaru, Ben-Gurion Univ, Dept of Matls Engr, Beer-Sheva, ISRAEL.

SESSION Cb6b: SILICIDES II
Chair: Eric H. Chason
Tuesday Afternoon, December 3, 1996
Salon F (M)

1:30 PM Cb6b.1
MORPHOLOGICAL AND STRUCTURAL CHARACTERISATION OF THIN FILMS DEPOSITED BY CVD ONTO DOPED POLYSILICON FILM AND ANNEALED IN AMBIENT, Sandro Santucci, Luca Lozzi, Univ di L'Aquila, Dept of Physics, L'Aquila , ITALY; M. Passacantando, Univ di L'Aquila, Dept of Chemistry, L'Aquila, ITALY; P. Picozzi, Univ di L'Aquila, Dept of Physics, Coppito, ITALY; R. Alfonsetti, Eagle-Texas Instruments Italia, Nucleao Industriale di Avezzano, Avezzano, ITALY; R. Diamanti, Eagle-Texas Instruments Italia, Nucleeo Industriale di Avezzano, Avezzano, ITALY; G. Moccia, Eagle-Texas Instruments Italia, Nuclea Industriale di Avezzano, Avezzano, ITALY; P. Petricola, Eagle-Texas Instruments Italia, Nucleo Industriale di Avezzano, Avezzano, ITALY.

1:45 PM Cb6b.2
EFFECTS OF DOPANT ON DCS- CVD AND INTEGRATED CLUSTERING PROCESS OF POLYCIDE FOR VLSI TECHNOLOGY , Jeong Soo Byun, LG Semicon Co Ltd, Adv Tech R&D Lab, Chungbuk, SOUTH KOREA; Byung Hak Lee, Samsung Display Devices, Display R & D Center, Suwon, Kyungki-Do, KOREA; Ji Soo Park, Jin Won Park, Jae-Jeong Kim, LG Semicon Co Ltd, Adv Technology R&D Lab, Cheongju-si Chungbuk, SOUTH KOREA; Kyong Won Kim, LG Semicon Co Ltd, Dept of Analytical Technology, Cheongju-si Chungbuk, SOUTH KOREA.

2:00 PM Cb6b.3
DEVELOPMENT OF SILICIDE MICROSTRUCTURE DURING THE REACTION BETWEEN Ti FILMS AND B-DOPED SILICON, Amado Quintero, Matthew Libera, Stevens Inst of Technology, Dept of MS&E, Hoboken, NJ; Cyril Cabral, Larry A. Clevenger, James M.E. Harper, IBM T.J. Watson Research Ctr, Yorktown Heights, NY.

2:15 PM Cb6b.4
PHASE TRANSFORMATION BY AMORPHIZATION TECHNIQUES, Tord E. Karlin, Royal Inst of Technology, Dept of Solid State Electronics, Stockholm, SWEDEN; Martin Samuelsson, Royal Inst of Technology, Solid State Electronics, Stockholm, SWEDEN; Stefan Nygren, Ericsson Components AB, NR/XM, Stockholm, SWEDEN; Mikael Ostling, Royal Inst of Technology, Solid State Electronics, Stockholm, SWEDEN.

2:30 PM BREAK

SESSION Cb7: METALLIZATION
Chairs: Douglas L. Medlin and Gary S. Was
Tuesday Afternoon, December 3, 1996
Salon F (M)

3:00 PM *Cb7.1
MICROSTRUCTURE CONTROL FOR THIN FILM METALLIZATION, Gary S. Was, Univ of Michigan, Dept of Nuclear Engr, Ann Arbor, MI; David J. Srolovitz, Univ of Michigan, Dept of MS&E, Ann Arbor, MI; Zhenqiang Ma, Univ of Michigan, Dept of Nuclear Engr & Radiological Sciences, Ann Arbor , MI; D. Liang, Univ of Michigan, Ann Arbor, MI.

3:30 PM *Cb7.2
MICROSTRUCTURE IN HETEROEPITAXIAL ALUMINUM THIN FILMS DEPOSITED ON SAPPHIRE, Douglas L. Medlin, Kevin F. McCarty, Robert Q. Hwang, M. I. Baskes, J. E. Smugeresky, Sandia National Laboratories, Livermore, CA.

4:00 PM Cb7.3
THE ROLE OF TiN STOICHIOMETRY WITH RESPECT TO DIFFUSION BARRIER RELIABILITY BETWEEN Al METALLIZATION AND Si SUBSTRATE, Han-Yu Tseng, Univ of Maryland, Materials Engineering, College Park, MD; Aris Christou, Univ of Maryland, Dept of Materials Engr, College Park, MD; Ted Tessner, Northrop Grummon Corp, Adv Technical Lab, Linthicum, MD; J. Orloff, Univ of Maryland, Inst of Plasma Research, College Park, MD.

4:15 PM Cb7.4
COPPER THIN FILM GROWTH ON LOW DIELECTRIC CONSTANT POLYMER, Mei Du, Bell Labs, Lucent Technologies, Murray Hill, NJ.

4:30 PM Cb7.5
EFFECT OF ADDING AMMONIA GAS TO Cu(hfac) TMVS DEPOSITED SYSTEM, Pi-Jiun Lin, National Chiao Tung Univ, Dept of Electronics Engr, Hsinchu, TAIWAN; Mao-Chieh Chen, National Chiao Tung Univ, Dept of Elecronics Engr, Hsinchu, TAIWAN.

4:45 PM Cb7.6
ATOMIC FORCE MICROSCOPY INVESTIGATION OF THE MORPHOLOGY OF A UV PHOTODEFINED PALLADIUM ACTIVATION LAYER AND OF THE NUCLEATION OF ELECTROLESS COPPER AT ACTIVATED SITES, Eamon J. Lafferty, Daniel J. Macauley, Patrick V. Kelly, Gabriel M. Crean, NMRC, Cork, IRELAND.

SESSION Cb8: STRESSES IN THIN FILMS I
Chairs: Todd C. Hufnagel and Robin L.B. Selinger
Wednesday Morning, December 4, 1996
Salon F (M)

8:30 AM *Cb8.1
THE MECHANICS OF STRAINED EPITAXIAL FILM/COMPLAINT SUBSTRATE MATERIAL SYSTEMS, L. B. Freund, Brown Univ, Engineering Div, Providence, RI.

9:00 AM Cb8.2
III-IV COMPLIANT SUBSTRATES FOR A REDUCTION OF STRAIN RELIEF IN STRAINED EPILAYERS, Carrie Carter-Coman, April Brown, Georgia Inst of Technology, School of Electrical Engr, Atlanta, GA; Robert Bicknell-Tassius, Georgia Inst of Technology, EOEML, Atlanta, GA; Nan Marie Jokerst, Georgia Inst of Technology, School of Electrical Engr, Atlanta, GA.

9:15 AM Cb8.3
MISFIT GRAINLETS: MISFIT COMPENSATION BY ORIENTATION-INDUCED STRAIN SOURCES, Martin Albrecht, Univ Erlangen-Nurnberg, Dept Mikrocharakterisierung, Erlangen, GERMANY; Silke Christiansen, Univ Erlangen-Nurnberg, Inst Werkstoffwissenschaften, Erlangen, GERMANY; Horst P. Strunk, Univ Erlangen-Nurnberg, Inst Materials Science, Erlangen, GERMANY.

9:30 AM Cb8.4
GENERATION OF MISFIT DISLOCATIONS IN STRAINED EPITAXIAL FILMS, M. Khantha, Vaclav Vitek, Univ of Pennsylvania, Dept of MS&E, Philadelphia, PA.

9:45 AM BREAK

10:15 AM *Cb8.5
MORPHOLOGICAL INSTABILITY OF A DISLOCATION LINE IN A STRESS GRADIENT, Robin L.B. Selinger, Ming Li, Catholic Univ of America, Dept of Physics, Washington, DC.

10:45 AM Cb8.6
DISLOCATION DYNAMICS IN THIN FILMS CAUSED BY EXCHANGE WITH THE SURFACE ADATOM LATTICE GAS , Robert Q. Hwang, Sandia National Laboratories, Livermore, CA; C. Barry Carter, Univ of Minnesota, Dept of CE&MS, Minneapolis, MN; John C. Hamilton, Sandia National Laboratories, Computational Materials Science, Livermore, CA; Andreas K. Schmid, Norman C Bartelt, Sandia National Laboratories, Livermore, CA.

11:00 AM Cb8.7
CREEP BEHAVIOR OF METASTABLE SiGe/Si HETEROSTRUCTURES, Armin Fischer, H. Kiihne, H. Richter, Inst for Semiconductor Physics, Frankfurt, GERMANY.

11:15 AM Cb8.8
IN SITU OBSERVATIONS OF THE GROWTH OF EPITAXIAL Fe/Pt(001) MULTILAYERS, Todd C. Hufnagel, Michael C. Kautzky, Bruce M. Clemens, Stanford Univ, Dept of MS&E, Stanford, CA.

11:30 AM Cb8.9
IN-SITU MEASUREMENTS OF ISLANDING AND STRAIN RELAXATION OF Ge/Si(111), P. W. Deelman, Rensselaer Polytechnic Inst, Dept of Physics, Troy, NY; L. J. Schowalter, Rensselaer Polytechnic Inst, Ctr of Integrated Elect & Elect Mfg, Troy, NY; Thomas G. Thundat, Oak Ridge National Laboratory, Health Science Research Div, Oak Ridge, TN.

11:45 AM Cb8.10
DEPTH SENSITIVE STRAIN ANALYSIS OF A W/Ta/W TRILAYER, Sandra G. Malhotra, IBM Microelectronics, Adv Semiconductor Tech Ctr, Hopewell Junction, NY; J. C. Bilello, S. M. Yalisove, Univ of Michigan, Dept of MS&E, Ann Arbor, MI; Zofia Rek, Stanford Univ, SLAC/SSRL, Stanford, CA.

SESSION Cb9: STRESSES IN THIN FILMS II
Chairs: William B. Carter and Demitris A. Kouris
Wednesday Afternoon, December 4, 1996
Salon F (M)

1:30 PM *Cb9.1
REARRANGEMENT AT COHERENT INTERFACES IN HETEROGENEOUS SOLIDS, Michael A. Grinfeld, Rutgers Univ, Dept of Mech Engr, Piscataway, NJ; Peter M Hazzledine, UES Inc, Dayton, OH.

2:00 PM Cb9.2
IN-SITU STUDY OF MICROSTRUCTURE AND STRAIN EVOLUTION IN SPUTTERED Fe FILMS ON Cu(001), Michael C. Kautzky, Todd C. Hufnagel, Jean-Francois Bobo, Bruce M. Clemens, Stanford Univ, Dept of MS&E, Stanford, CA.

2:15 PM Cb9.3
EFFECT OF NON-HYDROSTATIC STRESS ON KINETICS AND INTERFACIAL ROUGHNESS DURING SOLID PHASE EPITAXIAL GROWTH IN SILICON, William B. Carter, Michael J. Aziz, Harvard Univ, Engr & Applied Science Div, Cambridge, MA.

2:30 PM Cb9.4
MICROMECHANICS OF SURFACE DEFECTS, Demitris A. Kouris, Jarek Knap, Alonso Peralta, Arizona State Univ, Dept of Mechanical & Aerospace Engr, Tempe, AZ; Karl Sieradzki, Arizona State Univ, Dept of Mech & Aerospace Engr, Tempe, AZ.

2:45 PM BREAK

3:15 PM *Cb9.5
MICROSTRUCTURAL ORIGINS OF STRESSES IN VAPOR-DEPOSITED METALLIC THIN FILMS AND MULTILAYERS, Frans Spaepen, Harvard Univ, Div of Engr & Applied Sciences, Cambridge, MA.

3:45 PM Cb9.6
NATIVE OXIDE AND THE RESIDUAL STRESS OF THIN Mo AND Ta FILMS, Laraba J. Parfitt, J. C. Bilello, Univ of Michigan, Dept of MS&E, Ann Arbor, MI; Zofia Rek, Stanford Univ, SLAC/SSRL, Stanford, CA; S. M. Yalisove, Univ of Michigan, Dept of MS&E, Ann Arbor, MI.

4:00 PM Cb9.7
THE USE OF MULTISTEP PROCESSING TO CONTROL INTRINSIC STRESSES IN POLYCRYSTALLINE FILMS, Sumit Nijhawan, Brian W. Sheldon, Brown Univ, Dept of Engineering, Providence, RI; Susan M. Jankovsky, Brown Univ, Engineering Div, Providence, RI; Barbara L. Walden, Trinity College, Dept of Physics, Hartford, CT.

4:15 PM Cb9.8
SURFACE ROUGHENING, COLUMNAR GROWTH AND INTRINSIC STRESS FORMATION IN AMORPHOUS CuTi FILMS, Ulrich V. Hulsen, Univ Goettingen, 1 Physical Inst, Gottingen, GERMANY; P. Thiyagarajan, Argonne National Laboratory, Intense Pulsed Neutr. Source, Argonne, IL; Ulrich Geyer, Univ Goettingen, I. Phys. Inst, Goettingen, GERMANY.

4:30 PM Cb9.9
STRESS-DRIVEN WRINKLING OF -ALUMINA FILMS GROWN ON Fe-Cr-Al BY THERMAL OXIDATION, Vladimir K. Tolpygo, David R. Clarke, Univ of California-S Barbara, Dept of Materials, Santa Barbara, CA.

4:45 PM Cb9.10
STRESS AND MICROSTRUCTURAL EVOLUTION OF LPCVD POLYSILICON THIN FILMS DURING HIGH TEMPERATURE ANNEALING., Chia-Liang Yu, John C. Bravman, Paul A. Flinn, SeokHee Lee, Stanford Univ, Dept of MS&E, Stanford, CA.

SESSION Cb10: POSTER SESSION II
Chairs: Robert C. Cammarata Eric H. Chason Theodore L. Einstein and Ellen D. Williams
Wednesday Evening, December 4, 1996
8:00 P.M.
Grand Ballroom/Constitution (S)

Cb10.1
RESIDUAL STRESS IN THIN FILMS: A COMPARATIVE STUDY OF X-RAY VERSUS LASER CURVATURE METHOD, Zhibo Zhao, J. C. Bilello, Laraba J. Parfitt, S. M. Yalisove, J. G. Hershberger, Univ of Michigan, Dept of MS&E, Ann Arbor, MI.

Cb10.2
STRESS OF PLATINUM THIN FILMS DEPOSITED BY DC MAGNETRON SPUTTERING USING ARGON/OXYGEN GAS MIXTURE, Min Hong Kim, Tae-Soon Park, Seoul National Univ, School of MS&E, Seoul, SOUTH KOREA; Dong-Su Lee, Tong Yang Central Lab, Advanced Materials Area, Kyungki-Do, SOUTH KOREA; Yong Eui Lee, Seoul National Univ, School of MS&E, Seoul, SOUTH KOREA; Dong-Yeon Park, Hyun-Jung Woo, Dong-Il Chun, Tong Yang Central Lab, Advanced Materials Area, Kyungki-Do, SOUTH KOREA; Euijoon Yoon, Seoul National Univ, School of MS&E, Seoul, KOREA.

Cb10.3
STRESS AND ITS EFFECTS ON THE SURFACE MORPHOLOGY OF MULTILAYER Ti-Cu FILMS, Ping Zhou, Stanford Univ, W.W. Hansen Lab, Stanford, CA; Saps Buchman, Chris Gray, John Turneaure, Stanford Univ, W.W. Hansen Experimental Physics Lab, Stanford, CA; James E. Turlo, Tencor Instruments, Metrology, Santa Clara, CA.

Cb10.4
EFFECT OF STRESS ON COHERENTLY GROWN Au-Ni (100) SOLID SOLUTIONS, Veronique Gehanno, Gregory Abadias, CEA Grenoble, DRFMC/SP2M/NM, Grenoble, FRANCE; Bruno Gilles, CEA Grenoble, Centre d'Etudes Nucleaires, Grenoble, FRANCE; Alain Marty, CEA Grenoble, DRFMC/SP2M/NM, Grenoble, FRANCE; Mark Dynna, CEA Grenoble, DFRMC/SP2M/NM, Grenoble, FRANCE.

Cb10.5
INFLUENCE OF STRAIN ON THE MICROSTRUCTURE OF NiTi FILMS FOR MEMS APPLICATIONS, F. F. Gong, X. L. Wen, E. Y. Jiang, H. M. Shen, Tianjin Univ, Dept of Applied Physics, Tianjing, CHINA; Y. N. Wang, Nanjing Univ, Solid State Microstructures Lab, Nanjing, CHINA.

Cb10.6
METAL ORGANIC VAN DER WAALS EPITAXY OF WS2 ON MOTe2 (0001) SUBSTRATES, Wolfram Jaegermann, Christian Pettenkofer, Hahn-Meitner-Inst, Grenzflaechen, Berlin, GERMANY; Stephan Tiefenbacher, Hahn-Meitner-Inst, Grenzfchen, Berlin, GERMANY.

Cb10.7
TEM STUDY OF STRAIN-COMPENSATED InP/GaAs/GaP/GaAs SUPERLATTICE STRUCTURES , Irene A. Rusakova, Univ of Houston, Texas Ctr for Superconductivity, Houston, TX; Abdelhakim A. Bensaoula, Univ of Houston, Dept of Chemistry, Houston, TX; Abdelhak Bensaoula, Univ of Houston, Space Vacuum Epitaxy Ctr, Houston, TX.

Cb10.8
THE ORIGIN OF SPIRAL TYPE GROWTH MODE IN LATTICE-MISMATCHED HETEROEPITAXY, Gunther Springholz, Univ Linz, Halbleiterphysik, Linz, AUSTRIA; F. Kock, Y. Ueta, G. Bauer, Univ Linz, Inst Halbleiterphysik, Linz, AUSTRIA.

Cb10.9
STRESS RELAXATION IN TUNGSTEN FILMS BY ION IRRADIATION, Karim S. Boutros, Juanita Barone, Edwin Snoeks, Philips Research Laboratories, Briarcliff Manor, NY.

Cb10.10
STRESS AND TEMPERATURE DEPENDENCE OF MISFIT DISLOCATION NUCLEATION RATE IN SiGe ALLOYS: EVIDENCE OF A BRITTLE-TO-DUCTILE TRANSITION, Steven Labovitz, Univ of Pennsylvania, Dept of MS&E, Philadelphia, PA; Ya-Hong Xie, Bell Labs, Lucent Technologies, Dept of Microsystems Research, Murray Hill, NJ; David P. Pope, Univ of Pennsylvania, Dept of MS&E, Philadelphia, PA.

Cb10.11
TRICLINIC LATTICE DEFORMATION OF RELAXED InGaAs EPILAYER GROWN ON (001) GaAs SUBSTRATE BY MBE, Dong Kun Lee, Yeung Nam Univ, Dept of Physics, Kyungpook, SOUTH KOREA; Chang Soo Kim, KRISS, Taejon, SOUTH KOREA; Sam Kyu Noh, Yang Koo Cho, Yong Il Kim, Jae Young Leem, KRISS, Matls Evaluation Ctr, Taejon, SOUTH KOREA; Mal Noon Kim, In Ho Bae, Yeung Nam Univ, Dept of Physics, Kyangsan Kyungpook, SOUTH KOREA.

Cb10.12
EPITAXIAL GROWTH OF OMEGA-TITANIUM THIN FILMS ON THE (111) SURFACE OF ALPHA-IRON, Yang-Tse Cheng, GM NAO R&D Center, Dept of Physics, Warren, MI; Wen-Jing Meng, General Motors, R&D Ctr, Warren, MI.

Cb10.13
STRUCTURAL AND CHEMICAL PROPERTIES OF MBE GROWN NIOBIUM OVERLAYERS ON (100) RUTILE, Jan Marien, Max-Planck-Inst, Metallforschung, Stuttgart, GERMANY; Thomas Wagner, Max-Planck-Inst, Inst Werkstoffwissenschaft, Stuttgart, GERMANY; Manfred Ruhle, Max-Planck-Inst, Inst Werkstoffwinssenshaft, Stuttgart, GERMANY.

Cb10.14
EFFECTS OF BUFFER LAYERS ON THE GROWTH ORIENTATION AND MAGNETIC PROPERTIES OF EPITAXIAL FILMS, Chuei-Tang Wang, Stanford Univ, Dept of Materials Science, Stanford, CA; Robert L. White, Bruce M. Clemens, Stanford Univ, Dept of MS&E, Stanford, CA.

Cb10.15
EPITAXIAL GROWTH OF Si FROM SiH AT REDUCED PRESSURE IN CHEMICAL VAPOR DEPOSITION REACTOR WITH HIGH SPEED ROTATING DISK, Tadash Ohashi, Toshiba Ceramics Co Ltd, Research & Development Center, Kanagawa, JAPAN; Tatsuo Fujii, Tokuyama Ceramcis Co Ltd, Semiconductor Tech Div, Yamaguti, JAPAN; Katsuyuki Iwata, Tokuyama Ceramcis Co Ltd, SemiconductorTech Center, Yamaguti, JAPAN; Katuhiro Chaki, Toshiba Ceramics Co Ltd, Research & Development Center, Kanagawa, JAPAN; Yoshirou Aiba, Tokuyama Ceramcis Co Ltd, Semiconductor Tech Div, Yamaguti, JAPAN.

Cb10.17
INITIAL BUFFER LAYERS ON THE GROWTH OF InGaP on Si BY MBE, Hitoshi Kawanami, Sukriti Ghosh, Isao Sakata, Toshihiro Sekigawa, Electrotechnical Laboratory, Electron Devices Div, Ibaraki, JAPAN.

Cb10.18
SINGLE AND MULTIPLE HETEROSTRUCTURES ON Si(100) SUBSTRATE, Nkadi Sukidi, North Carolina State Univ, Dept of MS&E, Raleigh, NC; Nikolaus Dietz, Uwe Rossow, North Carolina State Univ, Dept of Physics, Raleigh, NC; Klaus J. Bachmann, North Carolina State Univ, Dept of MS&E, Raleigh, NC.

Cb10.19
ATOMIC-SCALE OBSERVATIONS OF HETEROEPITAXIAL CdTe GROWTH ON Si(001) AND Ge(001), David J. Smith, Arizona State Univ, Dept of Physics & Astronomy, Tempe, AZ; Shu-Chen Y. Tsen, Arizona State Univ, Ctr for Solid State Science, Tempe, AZ; Y. P. Chen, S. Sivananthan, Univ of Illinois-Chicago, Dept of Physics, Chicago, IL.

Cb10.20
MBE GROWTH OF PbTiO WITH In Situ ATOMIC ABSORPTION COMPOSITION CONTROL, Christopher D. Theis, Darrell G. Schlom, Pennsylvania State Univ, Dept of MS&E, University Park, PA.

Cb10.21
EPITAXIAL VARIANTS AND GRAIN BOUNDARY STRUCTURES IN HETEROEPITAXIAL LITHIUM TANTALATE ON BASAL SAPPHIRE, Robert A. Bellman, Iowa State Univ, Dept of MS&E, Ames, IA; Rishi Raj, Cornell Univ, Dept of MS&E, Ithaca, NY.

Cb10.22
GROWTH AND STRUCTURE OF EPITAXIAL THIN FILMS, Y. Gao, Y. J. Kim, S. A. Chambers, Yuanliang Chen, Jun Liu, Pacific Northwest National Laboratory, Richland, WA.

Cb10.23
EPITAXIAL GROWTH AND STRUCTURE OF HIGHLY MISMATCHED OXIDE FILMS WITH ROCKSALT STRUCTURE ON MgO, Petra A. Langjahr, Thomas Wagner, Max-Planck-Inst, Inst Werkstoffwissenschaft, Stuttgart, GERMANY; Fred F. Lange, Univ of California-S Barbara, Dept of Materials, Santa Barbara, CA; Manfred Ruhle, Max-Planck-Inst, Inst Werkstoffwinssenshaft, Stuttgart, GERMANY.

Cb10.24
THE STRUCTURE AND SURFACE MORPHOLOGY OF FERROELECTRIC BaTiO THIN FILMS GROWN BY MOCVD, Hong Wang, Shandong Univ, Inst of Crystal Materials, Jinan, CHINA; J. M. Zeng, Shandong Univ, Inst of Crystal Matls, Jinan, CHINA; S. X. Shang, Shandong Univ, Dept of Enviromnment Engr, Jinan, CHINA; Z. Wang, M. Wang, Shandong Univ, Inst of Crystal Materials, Jinan, CHINA.

Cb10.25
RELATION BETWEEN STRUCTURAL AND ELECTRONICAL PROPERTIES OF STRAINED THIN FILMS, Heiko Schuler, Siegfried Horn, Guido Weissmann, Christoph Renner, Stefan Klimm, Univ Augsburg, Inst fur Physik, Augsburg, GERMANY.

Cb10.26
REAL-TIME INVESTIGATION OF SINGLE AND MULTIPLE GaP-GaN HETEROSTRUCTURES ON Si(100) SUBSTRATES, Nikolaus Dietz, North Carolina State Univ, Dept of Physics, Raleigh, NC; Klaus J. Bachmann, Christopher Harris, Nkadi Sukidi, North Carolina State Univ, Dept of MS&E, Raleigh, NC.

Cb10.27
VAN DER WAALS EPITAXY OF II-VI SEMICONDUCTORS ON LAYERED CHALCOGENIDE (0001) SUBSTRATES: TOWARDS BUFFER LAYERS FOR LATTICE MISMATCHED SYSTEMS?, Wolfram Jaegermann, Hahn-Meitner-Inst, Grenzflaechen, Berlin, GERMANY; Michael Giersig, Hahn-Meitner-Inst, Dynamik, Berlin, GERMANY; Andreas Klein, Hahn-Meitner-Inst, Grenzflaechen, Berlin, GERMANY.

Cb10.28
INTEGRATED ENVIRONMENT FOR SIMULATIONS OF DEPOSITION PROCESSES, Olof Hellman, Shun-ichiro Tanaka, ERATO JST, Tanaka Solid Junction Project, Yokohama, JAPAN.

Cb10.29
APPLICATION OF STXM FOR THE STUDY OF TiSe /NbSe SUPERLATTICE, Hyun-Joon Shin, POSTECH, Experimental Support Div, Pohang Kyung-Buk, SOUTH KOREA; K. H. Jeong, YonSei Univ, Dept of Physics, Seoul, KOREA; David C. Johnson, Univ of Oregon, Dept of Chemistry, Eugene, OR; S. D. Kevan, Univ of Oregon, Material Science Inst, Eugene, OR; Myungkeun Noh, Univ of Oregon, Dept of Physics, Eugene, OR; T. Warwick, Lawrence Berkeley National Laboratory, Advanced Light Source, Berkeley, CA.

Cb10.30
MOCVD GROWTH OF ZnCdSe ON InP (001) SUBSTRATES, Hon-Kit Won, Sui-Kong Hark, Chinese Univ of Hong Kong, Dept of Physics, Shatin, HONG KONG.

Cb10.31
THE SYNTHESIS AND SUPERCONDUCTING BEHAVIOR OF CRYSTALLINE SUPERLATTICES: , Myungkeun Noh, Univ of Oregon, Dept of Physics, Eugene, OR; David C. Johnson, Univ of Oregon, Dept of Chemistry, Eugene, OR.

Cb10.32
SLOW DECAY OF RHEED OSCILLATION IN , Mitsuhiro Kushibe, Rensselaer Polytechnic Inst, Dept of Physics, Troy, NY; L. J. Schowalter, Rensselaer Polytechnic Inst, Ctr of Integrated Elect & Elect Mfg, Troy, NY; Yuriy V. Shusterman, Rensselaer Polytechnic Inst, Dept of Physics, Troy, NY; Nikolai L. Yokovlev, A.F. Ioffe Phys-Technical Inst, Dept of Solid State Optics, St. Petersburg, RUSSIA.

Cb10.33
OBSERVATION OF RHEED INTENSITY OSCILLATIONS DURING CaF MBE, Wing Kwan Liu, Univ of Oklahoma, Dept of Physics & Astronomy, Norman, OK; Xiao Ming Fang, Patrick J. McCann, Univ of Oklahoma, School of Electrical Engr, Norman, OK; Michael B. Santos, Univ of Oklahoma, Dept of Physics & Astronomy, Norman, OK.

Cb10.34
STRUCTURAL STUDIES OF EPITAXIAL FILMS ON Si(111), Yurii Vladimirov Shusterman, A.F. Ioffe Phys-Technical Inst, Optics of solids, St Petersburg, Russia; L. J. Schowalter, Rensselaer Polytechnic Inst, Ctr of Integrated Elect & Elect Mfg, Troy, NY; Andrey Yurievich Khilko, Nikolai Semenovich Sokolov, A.F. Ioffe Phys-Technical Inst, Dept of Solid State Optics, St Petersburg, Russia; Reginald N Kyutt, Galina N. Mosina, A.F. Ioffe Phys-Technical Inst, Dept of Physics of Dielectrics & Semiconductors, St Petersburg, RUSSIA.

Cb10.35
INFLUENCE OF H AND HCI ON THE HETEROEPITAXIAL GROWTH OF 3C-SiC FILMS ON Si(100) VIA LOW-TEMPERATURE CHEMICAL VAPOR DEPOSITION, James H. Edgar, Ying Gao, Kansas State Univ, Dept of Chemical Engr, Manhattan, KS.

Cb10.36
THE GROWTH AND CHARACTERIZATION OF THE Hf(0001)/HfB HETEROSTRUCTURES, Michael Belyansky, Michael Trenary, Univ of Illinois-Chicago, Dept of Chemistry, Chicago, IL; S. Otani, T. Tanaka, Natl Inst for Research in Inorganic Matls, Ibaraki, JAPAN.

Cb10.37
ATOMIC MOBILITY OF Ag AND THE EXCHANGE MECHANISM OF FeON Ag(100), Marc H. Langelaar, Groningen Univ, NVSF / MSC, Groningen, NETHERLANDS; Dirk O. Boerma, Univ of Groningen, NVSF / MSC, Groningen, NETHERLANDS.

SESSION Cb11: DEPOSITION AND GROWTH SIMULATIONS
Chair: Jean-Louis Barrat
Thursday Morning, December 5, 1996
Salon F (M)

8:30 AM Cb11.1
A 3-D ATOMISTIC SIMULATOR OF SPUTTER DEPOSITION PROCESSES, Hanchen Huang, Lawrence Livermore National Laboratory, Dept of Chemistry, Livermore, CA; George H. Gilmer, Bell Labs, Lucent Technologies, Dept of Silicon Processing, Murray Hill, NJ; Tomas Diaz de la Rubia, Lawrence Livermore National Laboratory, Dept of Chem & Matls Science, Livermore, CA.

8:45 AM Cb11.2
3-D ATOMISTIC MONTE CARLO SIMULATIONS OF DEFECT INCORPORATION DURING CVD DIAMOND FILM GROWTH, Corbett C. Battaile, Univ of Michigan, Materials Science and Engineer, Ann Arbor, US; James E. Butler, Naval Research Laboratory, Washington, DC; David J. Srolovitz, Univ of Michigan, Dept of MS&E, Ann Arbor, MI.

9:00 AM Cb11.3
FAST CLUSTER DIFFUSION ON A SMOOTH SUBSTRATE: A MOLECULAR DYNAMICS STUDY, Jean-Louis Barrat, Pierre Deltour, Pablo Jensen, Univ de Lyon, Dept of Physic Materials, Villeurbanne, FRANCE.

9:15 AM Cb11.4
THIN FILM GROWTH AS A RESULT OF CLUSTER-SURFACE COLLISIONS: COMPUTATIONAL SIMULATIONS, Susan B. Sinnott, Univ of Kentucky, Dept of Chem & Matls Engr, Lexington, KY; Lifeng Qi, Univ of Kentucky, Dept of Chemical & Materials Engr, Lexington, KY.

9:45 AM BREAK

SESSION Cb12: ENERGETIC GROWTH PROCESSES I
Chairs: Alexander Demchuk and Anthony J. Kenyon
Thursday Morning, December 5, 1996
Salon F (M)

10:15 AM Cb12.1
ECR OXYGEN-PLASMA-ASSISTED GROWTH OF EPITAXIAL ZIRCONIA FILMS, Scott C. Moulzolf, Robert J Lad, Univ of Maine, LASST, Orono, ME; David J. Frankel, Univ of Maine, LAAST, Orono, ME; Yan Yu, Univ of Maine, LASST, Orono, MEE.

10:30 AM Cb12.2
PLASMA REACTOR OPTIMIZATIONS USING AN ATOMSPHERIC RF PLASMA DEPOSITION TECHNIQUE, Dave Hunt, Xingwu W. Wang, Robert W. Moss, John E. Olson, D. H. Lee, Alfred Univ, Dept of Electrical Engr, Alfred, NY.

10:45 AM Cb12.3
MOLECULAR DYNAMICS STUDY OF AMORPHOUS-CRYSTALLINE INTERFACES IN Si: MICROSTRUCTURAL EVOLUTION DURING ION IRRADIATION, Detlef M. Stock, Brigitte Weber, Konrad Gartner, Univ Jena, Inst fur Festkorperphysik, Jena, GERMANY.

11:00 AM Cb12.4
LOW TEMPERATURE EPITAXIAL GROWTH OF LAYERS ON Si(100) USING BIAS EVAPORATION, Tomoyasu Inoue, Iwaki-Meisei Univ, Dept of Electronic Engr, Fukushima, JAPAN; Yasuhiro Yamamoto, Hosei Univ, Electronic Informatics, Tokyo, JAPAN; Masataka Satoh, Hosei Univ, Research Center of Ion Beam, Tokyo, JAPAN.

11:15 AM Cb12.5
FILM STRUCTURE: VAPOR TRANSPORT EFFECTS IN A LOW VACUUM DIRECTED VAPOR DEPOSITION SYSTEM, J F Groves, H.N.G. Wadley, Univ of Virginia, Dept of MS&E, Charlottesville, VA.

11:30 AM Cb12.6
SURFACE STRUCTURE AND MORPHOLOGY MODIFICATION OF SILICON LAYERS INDUCED BY NANOSECOND PULSED LASER IRRADIATION, Alexander Demchuk, Tulane Univ, Dept of Chemistry, New Orleans, LA.

11:45 AM Cb12.7
EXCIMER LASER IRRADIATION OF Mn THIN FILMS DEPOSITED ON A SUBSTRATE OF Fe-Al ALLOY, Sebastiano Tosto, P. DiLazzaro, S. Frangini, J. Lascovich, F. Pierdominici, A. Santoni, ENEA, Dept of Innovation, Roma, ITALY.

SESSION Cb13: ENERGETIC GROWTH PROCESSES II
Chairs: Robert L. DeLeon and J. W. McCamy
Thursday Afternoon, December 5, 1996
Salon F (M)

1:30 PM Cb13.1
TIME RESOLVED RHEED STUDIES OF EPITAXIAL SEMICONDUCTOR THIN FILMS GROWN BY PULSED-LASER DEPOSITION, J. W. McCamy, Michael J. Aziz, Harvard Univ, Engr & Applied Science Div, Cambridge, MA.

1:45 PM Cb13.2
ATOMIC FORCE MICROSCOPY STUDY OF HARD COATING FILMS PREPARED BY PULSED LASER DEPOSITIN METHOD, Hsieh-Li Chan, Ashok Kumar, Univ of South Alabama, Dept of Electrical Engr, Mobile, AL; A. Wierzbicki, Univ of South Alabama, Dept of Chemistry, Mobile, AL; S. C. Sikes, Univ of South Alabama, Dept of Biological Sciences, Mobile, AL.

2:00 PM Cb13.3
COMPOSITION AND MICROSTRUCTURE OF (x=0, 0.5) THIN FILMS, Patricia J. Loferski, Naval Research Laboratory, Washington, DC; Lee A. Knauss, James S. Horwitz, Douglas B. Chrisey, Jeffrey M. Pond, Naval Research Laboratory, Code 6673, Washington, DC.

2:15 PM Cb13.4
EPITAXIAL BaTi AND KNbO THIN FILMS ON VARIOUS SUBSTRATES FOR OPTICAL WAVEGUIDE APPLICATIONS, Lutz Beckers, P. Leinenbach, S. Mesters, Jurgen Schubert, W. Zander, J. Zeissman, Christoph Buchal, Forschungszentrum Julich, ISI, Julich, GERMANY; D. Fluck, P. Gunter, ETH-Honggerberg, Inst of Quantum Electronics, Zurich, SWITZERLAND.

2:30 PM Cb13.5
PULSED LASER DEPOSITION OF ALKALINE EARTH ZIRCONITE FILMS, Robert B. Yanochko, William F. Brock, Robert Leuchtner, Univ of New Hampshire, Dept of Physics, Durham, NH; James E. Krzanowski, Univ of New Hampshire, Dept of Mechanical Engr, Durham, NH.

2:45 PM Cb13.6
IN-SITU OPTICAL DIAGNOSTICS DURING PULSED-LASER DEPOSITION OF MAGNETORESISTIVE La-Ca-Mn-O FILMS ON SILICON SUBSTRATES, Pang-Jen Kung, Joseph E. Cosgrove, Advanced Fuel Research, EMD Group, East Hartford, CT; Karen Kinsella, David G. Hamblen, Advanced Fuel Research, East Hartford, CT.

3:00 PM BREAK

3:30 PM Cb13.7
FACETING AND THIN FILM GROWTH ON CERAMIC SURFACES, C. Barry Carter, Univ of Minnesota, Dept of CE&MS, Minneapolis, MN; Jason R. Heffelfinger, Univ of Minnesota, Dept of Chemical Engr & Materials Science, Minneapolis, MN.

3:45 PM Cb13.8
BELOW ROOM-TEMPERATURE CdS THIN FILM DEPOSITION BY CW Nd: YAG LASER, Jonny M. Harris, Xingwu W. Wang, Robert W. Moss, D. H. Lee, John E. Olson, Alfred Univ, Dept of Electrical Engr, Alfred, NY.

4:00 PM Cb13.9
LASER-ASSISTED MOLECULAR BEAM DEPOSITION OF Si FILMS, Robert L. DeLeon, Limin Sun, J. Charlebois, J. F. Garvey, SUNY-Buffalo, Dept of Chemistry, Buffalo, NY; Eric W. Forsythe, Gary S. Tompa, Structural Materials Industries Inc, Piscataway, NJ.

4:15 PM Cb13.10
ATOMIC PEENING EFFECT OF AMBIENT GAS ON PLATINUM FILMS DEPOSITED ON AMORPHOUS SUBSTRATES BY PULSED LASER DEPOSITION, Yoon-Hee Jeong, Kibong Lee, Taeyoung Koo, POSTECH, Dept of Physics, Kyungbuk, SOUTH KOREA.

4:30 PM Cb13.11
GROWTH OF EPITAXIAL Si ON DIHYDRIDE-TERMINATED Si (001) BY PULSED LASER DEPOSITION, Maggie E. Taylor, California Inst of Technology, T.J. Watson Labs of Applied Physics, Pasadena, CA; Harry A. Atwater, California Inst of Technology, Dept of Applied Physics, Pasadena, CA; M.V. Ramana Murty, Cornell Univ, Dept of Physics, Ithaca, NY.

4:45 PM Cb13.12
EFFECTS OF TEMPERATURE AND GAS PRESSURE ON EPITAXIAL ZnSe FILM GROWTH, Yungrel Ryu, Shen Zhu, Henry W. White, H. R. Chandrasekhar, Univ of Missouri-Columbia, Dept of Physics & Astronomy, Columbia, MO.

SESSION Cb14: POSTER SESSION III
Chairs: Robert C. Cammarata Eric H. Chason Theodore L. Einstein and Ellen D. Williams
Thursday Evening, December 5, 1996
8:00 P.M.
Grand Ballroom/Constitution (S)

Cb14.1
SIMULATION OF SPUTTER DEPOSITION PROCESSES BY THE DSMC METHOD, Chien Ouyang, C. C. Fang, SUNY-Stony Brook, Dept of Mechanical Engr,; Vish Prasad, SUNY-Stony Brook, Dept of Mech Engr, Stony Brook, NY.

Cb14.2
THE STUDY OF ISLAND GROWTH OF CHEMICAL VAPOR DEPOSITED COPPER FILMS: EXPERIMENT AND SIMULATION, Jaydeb Goswami, Sa Shivashankar, G. Anathakrishna, Indian Inst of Science, Materials Research Centre, Bangalore, INDIA.

Cb14.3
CLUSTER MODEL STUDY OF -ADSORPTION ON GaAs(001) SURFACES, Sandor Kunsagi-Mate, Nandor Marek, Janus Pannonius Univ, Res Group for Theoretical Chem, Pecs, HUNGARY; Tamas Marek, Univ Erlangen-Nurnberg, Erlangen, GERMANY; Horst P. Strunk, Univ Erlangen-Nurnberg, Inst Materials Science, Erlangen, GERMANY.

Cb14.4
STM, X-RAY AND TEM TEMPERATURE DEPENDENT GROWTH STUDY OF PLD THIN FILMS, Marilyn E. Hawley, Los Alamos National Laboratory, CMS, Los Alamos, NM; Q. X. Jia, C. D. Adams, Los Alamos National Laboratory, CMS, Los Alamos, NM.

Cb14.5
IN SITU CHARACTERIZATION OF THIN FILM MORPHOLOGY BY ELASTIC LIGHT SCATTERING , Vladimir Ya. Shur, Ural State Univ, Inst Physics & Applied Mathematics, Ekaterinburg, RUSSIA; Stanislav A. Negashev, Alexander L. Subbotin, Ural State Univ, Inst Physics & Applied Math, Ekaterinburg, RUSSIA; Ekaterina A. Borisova, Ural State Univ, Institute Physics & Applied , Ekaterinburg, RUSSIA; Dmitrii V. Pelegov, Ural State Univ, Inst Physics & Applied Mathematics, Ekaterinburg, RUSSIA.

Cb14.6
SYNTHESIS, STRUCTURE, AND MECHANICAL PROPERTIES OF B C FILMS DEPOSITED BY SPUTTERING, Paul B Mirkarimi, Douglas L. Medlin, Kevin F. McCarty, W. M. Clift, M. T. Dugger, Sandia National Laboratories, Livermore, CA.

Cb14.7
THIN FILM DEPOSITION VIA PULSED LASER ABLATION, Valentin G. Panayotov, Brent D Koplitz, Michael C. Kelly, Geoff G. Gomlak, Tulane Univ, Dept of Chemistry, New Orleans, LA; Teresa L.T. Birdwhistell, Xavier Univ, Dept of Chemistry, New Orleans, LA.

Cb14.8
MORPHOLOGY AND STRUCTURE OF Si Ge FILMS GROWN BY REMOTE PLASMA-ENHANCED CHEMICAL VAPOR DEPOSITION, Sanjay K. Banerjee, John L. Fretwell, Univ of Texas-Austin, Dept of Electrical Engr, Austin, TX; Bruce Doris, Univ of Texas-Austin, Dept of Physics, Austin, TX; Rajan Sharma, Univ of Texas-Austin, Dept of Electrical Engr, Austin, TX.

Cb14.9
PREPARATION OF THE PZT THIN FILMS BY ECR PLASMA ENHANCED DC MAGNETRON MULTI-TARGET SPUTTERING, Sung-Tae Kim, Hyun-Ho Kim, KAIST, Dept of MS&E, Taejon, SOUTH KOREA; Sang-In Lee, Samsung Electronics Co Ltd, Semiconductor R&D Ctr,; Won-Jong Lee, KAIST, Dept of MS&E, Taejon, SOUTH KOREA.

Cb14.10
THE EFFECTS OF IN-SITU PLASMA TREATMENT ON THE PROPERTIES OF MOCVD TiN FILMS, Do-Heyoung Kim, LG Semicon Co Ltd, Process Group, Cheongui-si Chungbuk, SOUTH KOREA; Young J. Lee, LG Semicon Co Ltd, Device Group, Cheongju-si, SOUTH KOREA; Jung-Ju Kim, LG Semicon Co Ltd, Process Group, Cheongju-si, SOUTH KOREA; Jin Won Park, Jae-Jeong Kim, LG Semicon Co Ltd, Adv Technology R&D Lab, Cheongju-si, SOUTH KOREA.

Cb14.11
THE EFFECT OF RTA TREATMENT ON THE CHARACTERISTICS OF PLZT THIN FILMS PREPARED BY ECR-PECVD, Joong-Shik Shin, Won-Jong Lee, KAIST, Dept of MS&E, Taelon, KOREA.

Cb14.12
CHANGES IN STRUCTURE AND COMPOSITION OF SILICON OXIDE THIN FILMS INDUCED BY ULTRAVIOLET ILLUMINATION, Eduardo G. Parada, Pio Gonzalez, Betty M. Leon, Univ de Vigo, Dept Fisica Aplicada, Galicia, SPAIN; Mariano Perez-Amor, Univ de Vigo, Dept Fisica Aplicade, Galicia, SPAIN; M. F. da Silva, Inst Tecnologico e Nuclear, Dept de Fisica, Sacavem, PORTUGAL; J. C. Soares, Univ de Lisboa, Centro de Fisica Nuclear, Lisboa, PORTUGAL; Asuncion Fernandez, A. R. Gonzalez-Elipe, CSIC, Sevilla, SPAIN.

Cb14.13
(111) TEXTURE IN 60/40 PZT THIN FILMS DERIVED BY THE MOD PROCESS USING NON-RAPID HEAT TREATMENT Process Using Non-Rapid Heat Treatment, Jarrod L. Norton, Gerald L Liedl, Purdue Univ, School of Materials Engr, West Lafayette, IN; Elliott B. Slamovich, Purdue Univ, School of Matls Engr, West Lafayette, IN.

Cb14.14
PHASE TRANSITION DURING EXCIMER LASER ANNEALING OF AMORPHOUS THIN FILM, N. Starbov, CLAFOP, Bulgarian Academy of Science, Sofia, BULGARIA; B. Mednikarov, V. Mankov, CLAFOP, Bulgarian Academy of Sciences, Sofia, BULGARIA; D. Georgiev, CLAFOP, Bulgarian Academy of Science, Sofia, BULGARIA; K. Kolev, L. D. Laude, Univ de Mons-Hainaut, Dept of Materials, Mons, BELGIUM.

Cb14.15
XPS-STUDY OF EXCIMER LASER-RECONSTRUCTED ALUMINA SURFACE, D. Georgiev, CLAFOP, Bulgarian Academy of Science, Sofia, BULGARIA; K. Kolev, L. D. Laude, Univ de Mons-Hainaut, Dept of Materials, Mons, BELGIUM; O. Brouxhon, Facultes Univ N-D de la Paix, LISE, Namur, BELGIUM.

Cb14.16
STRUCTURAL AND ELECTRICAL PROPERTIES OF MERCURY ZINC SULPHIDE THIN FILMS PREPARED BY FLASH EVAPORATION TECHNIQUE, Pradyumna K. Swain, New Jersey Inst of Technology, Dept of Electrical & Computer Engr, Newark, NJ; Hersh Kant Sehgal, Indian Inst of Technology, Dept of Physics, New Dehli, INDIA; Durga Madhab Misra, New Jersey Inst of Technology, Dept of Electrical & Computer Engr, Newark , NJ.

Cb14.17
SnO :F THIN FILMS WITH HIGH FLUORINE CONTENTS PRODUCED BY SPRAY PYROLYSIS AT CONSTANT SUBSTRATE TEMPERATURE, Dwight R. Acosta, UNAM, Inst de Fiscia, Mexico, MEXICO; Enrique Zironi, UNAM, Inst de Fisica, Mexico, MEXICO; Walter Estrada, Univ Nacional de Ingenieria, Lima, PERU.

Cb14.18
CHARACTERIZATION OF Pt THIN FILMS DEPOSITED ON AT DIFFERENT TERMPERATURES USING JET PROCESS AND ULTRA HIGH VACUUM ELECTRON BEAM EVAPORATION, Madan Dubey, U.S. Army Research Laboratory, Physical Science Dir AMSRL-PS.DB, Fort Monmouth, NJ; Donald Eckart, U.S. Army Research Laboratory, Dept of Physical Sciences, Ft. Monmouth, NJ; R. Lareau, U.S. Army Research Laboratory, Physical Science Dir, Fort Momouth, NJ; Ken Jones, U.S. Army Research Laboratory, Fort Monmouth, NJ; T. Tamagawa, Y. Di, B. Halpern, J. Schmitt, Jet Process Corp, New Haven, CT.

Cb14.19
GROWTH OF CUBIC SiC THIN FILMS ON Si FROM SINGLE SOURCE PRECURSORS BY SUPERSONIC JET EPITAXY , Jin-Hyo Boo, Cornell Univ, Dept of Physics, Ithaca, NY; P. E. Norris, H. P. Maruska, NZ Applied Technologies, Woburn, MA; Wilson Ho, Cornell Univ, Dept of Physics, Ithaca, NY.

Cb14.20
(100) ORIENTED PLATINUM THIN FILMS DEPOSITED BY DC MAGNETRON SPUTTERING ON SiO /Si SUBSTRATES, Dong-Yeon Park, Dong-Su Lee, Tong Yang Central Lab, Advanced Materials Area, Kyungki-Do, SOUTH KOREA; Min Hong Kim, Tae-Soon Park, Seoul National Univ, School of MS&E, Seoul, SOUTH KOREA; Hyun-Jung Woo, Tong Yang Central Lab, Advanced Materials Area, Kyungki-Do, SOUTH KOREA; Euijoon Yoon, Seoul National Univ, School of MS&E, Seoul, KOREA; Dong-Il Chun, Jo-Woong Ha, Tong Yang Central Lab, Advanced Materials Area, Kyungki-Do, SOUTH KOREA.

Cb14.21
CHARACTERIZATION OF PLATINUM FILMS DEPOSITED BY A TWO-STEP DC MAGNETRON SPUTTERING ON SiO /Si SUBSTRATES, Dong-Su Lee, Dong-Yeon Park, Tong Yang Central Lab, Advanced Materials Area, Kyungki-Do, SOUTH KOREA; Min Hong Kim, Seoul National Univ, School of MS&E, Seoul, SOUTH KOREA; Dong-Il Chun, Jo-Woong Ha, Tong Yang Central Lab, Advanced Materials Area, Kyungki-Do, SOUTH KOREA; Euijoon Yoon, Seoul National Univ, School of MS&E, Seoul, KOREA.

Cb14.22
DOPING PROPERTIES OF ION-BEAM-SPUTTERED SiGe FILM, Wen-Jie Qi, Zhi-Sheng Wang, Zhi-Guang Gu, Guo-Bao Jiang, Bing-Zong Li, Fudan Univ, Dept of Electronic Engr, Shanghai , CHINA; Paul K. Chu, City Univ of Hong Kong, Dept of Physical & Matls Science, Hong Kong, HONG KONG.

Cb14.23
MULTILAYER FRESNEL ZONE PLATE FOR 8KeV X-RAY BY DC SPUTTERING DEPOSITION, Shigeharu Tamura, Osaka National Research Inst, Dept of Material Physics, Osaka, JAPAN; Kakuji Mori, Kunio Yoshida, Osaka Inst of Technology, Dept of Electrical Engr, Osaka, JAPAN; Kazuo Ohtani, Nagao Kamijyo, Osaka National Research Inst, Dept of Optical Materials, Osaka, JAPAN; Yoshio Suzuki, Hitachi Ltd, Adv Research Lab, Saitama, JAPAN; Hiroshi Kihara, Kansai Medical Univ, Osaka, JAPAN.

Cb14.24
RAMAN SPECTROSCOPY AND X-RAY DIFFRACTION STUDIES OF Ti-W-O THIN FILMS, Luigi Sangaletti, Univ di Brescia, Dipart di Chimica e Fisica Materiali, Brescia, ITALY; Laura E. Depero, Univ di Brescia, Dept di Chimica e Fisica per i Materiali, Brescia, ITALY; Pietro Galinetto, Univ di Pavia, Pavia, ITALY; Silvio Groppelli, Univ di Brescia, Dipt Chimica Fisicia Materiali, Brescia, ITALY; Giorgio Sberveglieri, Univ di Brescia, Dipt Chimica Fisica Materiali, Brescia, ITALY; Roberto Salari, Univ di Brescia, Dipt di Chimica e Fisica per i Materiali, Brescia, ITALY; Elza Bontempi, Univ di Brescia, Dipt Chimica e Fisica per i Materiali, Brescia, ITALY.

Cb14.25
FORMATION AND PHASE TRANSFORMATION OF R.F. SPUTTER DEPOSITED NON-BCC -A15 Cr THIN FILMS, J. P. Chu, National Taiwan Ocean Univ, Inst of Materials Eng, Keelung, TAIWAN; J. W. Chang, National Taiwan Ocean Univ, Inst of Materials Engr, Keelung, TAIWAN; P. Y. Lee, National Taiwan Ocean Univ, Inst of Materials Eng, Keelung, TAIWAN; J. K. Wu, National Taiwan Ocean Univ, Inst of Materials Engr, Keelung, TAIWAN.

Cb14.26
STRUCTURAL TRANSITIONS IN Cu/Fe MULTILAYERED THIN FILMS, Tai D. Nguyen, Alison Chaiken, Lawrence Livermore National Laboratory, Dept of Chem & Matls Science, Livermore, CA; Troy W. Barbee, Lawrence Livermore National Laboratory, Dept of Chemistry & Matls Science, Livermore, CA.

Cb14.27
TRANSMISSION ELECTRON MICROSCOPY STUDY OF INTERFACE MICROSTRUCTURE IN ZnO THIN FILMS GROWN ON A GLASS SUBSTRATE AND BUFFER METALS, Yukio Yoshino, Murata Mfg Co Ltd, Yokohama R&D Center, Kanagawa, JAPAN; Hiroko Aoki, Yoichi Deguchi, Murata Mfg Co Ltd, R&D Div, Shiga, JAPAN; Shingo Iwasa, Murata Mfg Co Ltd, Ishikawa, JAPAN; Kuniki Ohwada, Murata Mfg Co Ltd, Yokohama R&D Center, Kanagawa, JAPAN; Yoji Yamamoto, Murata Mfg Co Ltd, R&D Div, Shiga, JAPAN.

Cb14.28
PHOTOLUMINESCENCE AND CATHODOLUMINESCENCE OF ZnO:Zn PHOSPHOR FILMS PREPARD BY MOCVD, Eric W. Forsythe, Yabo Li, Structural Materials Industries Inc, Piscataway, NJ; D. C. Morton, J. Liu, U.S. Army Research Laboratory, AMSRL-PS-DC, Fort Monmouth, NJ; B. A. Khan, Briarcliff Manor, NY; Gary S. Tompa, Structural Materials Industries Inc, Piscataway, NJ.

Cb14.30
STRUCTURAL ANALYSIS AND MODELLING OF Eu-DOPED THIN FILMS GROWN BY THE SOLD-GEL METHOD, Laura E. Depero, Univ di Brescia, Dept di Chimica e Fisica per i Materiali, Brescia, ITALY; Luigi Sangaletti, Univ di Brescia, Dipart di Chimica e Fisica Materiali, Brescia, ITALY; Lidia Armelao, Univ di Padova, Dept di Chimica e Fisica per i Materiali, Padova, ITALY; Marco Bettinelli, Univ di Verona, Istituto Policattedra, Verona, ITALY.

Cb14.31
THE DEPOSITION OF CALCIUM CARBONATE FILMS FROM SOLUTIONS CONTAINING POLYMERIC ADDITIVES, Laurie B. Gower, David A. Tirrell, Univ of Massachusetts, Dept of Polymer Science & Engr, Amherst, MA.

Cb14.32
STRUCTURAL AND OPTICAL PROPERTIES OF ELECTROCHROMIC NICKEL OXIDE FILMS, Kensuke Murai, Osaka National Research Inst, Dept of Materials Physics, Osaka, JAPAN; Yoshiyuki Sato, Shigeharu Tamura, Osaka National Research Inst, Dept of Material Physics, Osaka, JAPAN.

Cb14.33
A STUDY ON THE GROWTH OF A FERROELECTRIC THIN FILM USING IONIZED CLUSTER BEAM EPITAXY TECHNIQUE AND THE APPLICATION FOR ULSI FABRICATION, Hyun Seok Lee, Man-Young Sung, Young Sik Kim, Young Shin Woo, Korea Univ, Dept of Electrical Engr, Seoul, SOUTH KOREA.

Cb14.34
IN-SITU ATOMIC ABSORPTION / UV-REFLECTANCE USED FOR REAL-TIME SIMULTANEOUS MONITORING OF WAFER- AND ENVIRONMENT-STATES DURING MOLECULAR BEAM EPITAXIAL GROWTH, D. H. Christensen, NIST, Boulder, CO; Joe R. Ketterl, T. P. Pearsall, Univ of Washington, Seattle, WA; J. R. Hill, NIST, Boulder, CO.

Cb14.35
OBSERVATION OF FILM GROWTH PHENOMENA USING MICROMACHINED STRUCTURES, Frank DiMeo, Richard E. Cavicchi, NIST, Process Measurements Div, Gaithersburg, MD; Steve Semancik, NIST, Chemical Science & Tech Lab, Gaithersburg, MD; John S. Suehle, Nim H. Tea, NIST, Semiconductor Electronic Div, Gaithersburg, MD.

Cb14.36
DETERMINATION OF THE TEMPERATURE AND GROWTH RATE OF CVD DIAMOND FILM USING IN-SITU TWO-COLOR PYROMETRY, Zhiping Yin, City College of New York, Dept of Phyics, New York, NY; Frederick W. Smith, Zinoviy L. Akkerman, City College of New York, Dept of Physics, New York, NY; Roy Gat, ASTEX, Diamond & Process Products, Woburn, MA.

Cb14.37
THE DEVELOPMENT OF CKVV X-RAY EXCITED AES FOR DETERMINATION OF THE SP2, Michael N. Petukhov, RRC Kurchatov Inst, IRTM, Moscow, RUSSIA; Alecei P. Dementjev, RRC Kurchatov Inst, Dept IRTM, Moscow, RUSSIA.

Cb14.38
MICROSTRUCTURAL AND VIBRATIONAL SIGNATURES OF AMORPHOUS HYDROGENATED CARBON, Thomas Koehler, Technische Univ Chemnitz, Inst Physics, Chemnitz, GERMANY; Gerd Jungnickel, Thomas Frauenheim, Technische Univ Chemnitz, Inst fur Physik, Chemnitz, GERMANY.

Cb14.39
LOCAL EPITAXIAL DIAMOND FILM (100) ON SI (100), Ke-an Feng, Xiaoming Hu, Zhangda Lin, Inst of Physics, State Key Lab of Surface Physics, Beijing, CHINA.

Cb14.40
GROWTH OF CVD DIAMOND (a) ON LARGE MOLYBDENUM CLYINDERS FOR CROSSED-FIELD AMPLIFIER APPLICATIONS and (b) AT AN ATMOSPHERIC PRESSURE OF HYDROGEN AND METHANE BY HOT-FILAMENT TECHNIQUE, R. Ramesham, M. F. Rose, Auburn Univ, Space Power Inst, Auburn, AL.

Cb14.41
PLASMA ETCHING AND PATTERNING OF CVD DIAMOND AT FOR MICROELECTRONICS APPLICATIONS, R. Ramesham, Auburn Univ, Space Power Inst, Auburn, AL; W. Welch, Auburn Univ, Auburn, AL; Charles Neely, Auburn Univ, Dept of Chemistry, Auburn, AL; M. F. Rose, R. F. Askew, Auburn Univ, Space Power Inst, Auburn, AL.

Cb14.42
ELABORATION AND CHARACTERIZATION OF Ti,TiN THIN FILMS AND Ti/TiN MULTILAYERS FOR HARD COATING APPLICATIONS, Sid Labdi, Univ d'Evry, Evry, FRANCE; Ph. Houdy, Univ d'Evry, Val d'Essone, Evry, FRANCE; P. Psyllaki, M. Jeandin, Ecole des Mines, ARMINES, Evry, FRANCE.

Cb14.43
A MODEL FOR In INCORPORATION IN THE GROWTH OF InGaN FILMS, E. L. Piner, North Carolina State Univ, Dept of Materials, Raleigh, NC; F. G. McIntosh, J. C. Roberts, North Carolina State Univ, Dept of Electrical & Computer Engr, Raleigh, NC; Karim S. Boutros, Philips Research Laboratories, Briarcliff Manor, NY; M. A. Aumer, V. A. Joshkin, North Carolina State Univ, Dept of Electrical & Computer Engr, Raleigh, NC; N. A. El-Masry, North Carolina State Univ, Dept of MAT, Raleigh, NC; S. M. Bedair, S. Liu, North Carolina State Univ, Dept of Electrical & Computer Engr, Raleigh, NC.

Cb14.45
CHARACTERIZATION OF Co-Cr-Mo ALLOYS USED IN HIP IMPLANT ARTICULATING SURFACES, Rocco Varano, Steve Yue, McGill Univ, Dept of Metallurgical Engr, Montreal, CANADA; John D. Bobyn, Montreal General Hospital, Jo Miller Orthopaedic Research Ctr, Montreal, CANADA; John B. Medley, Univ of Waterloo, Dept of Mechanical Engr, Waterloo, ON.

Cb14.46
SYNTHESIS OF CRYSTALLINE FILMS AND THE NEW C-N PHASES, Yan Chen, York Univ, Dept of Physics & Astronomy`, North York, CANADA; Liping Guo, SUNY-Buffalo, Dept of Physics & Astronomy, Buffalo, NY; Enge Wang, Inst of Physics, Chinese Academy of Sciences, Beijing, CHINA; R. H. Prince, York Univ, Dept of Physics & Astronomy, North York, CANADA.

Cb14.47
THE RELATION OF RESIDUAL STRESS AND BONDING STRUCTURE OF DIAMOND-LIKE CARBON FILMS DEPOSITED BY RF PECVD, Woon Choi, Hong-Ik Univ, Dept of ME&MS, Seoul, SOUTH KOREA; Dong-Hoon Shin, Hong-Ik Univ, Dept of MS&MS, Seoul, SOUTH KOREA; Seung-Eui Nam, Hyoung-June Kim, Hong-Ik Univ, Dept of ME&MS, Seoul, SOUTH KOREA.

Cb14.48
GROWTH AND CHARACTERIZATION OF ALLOYS USING NOVEL CHEMICAL PRECURSOR, Durvasulu Chandrasekhar, Arizona State Univ, Center for Solid State Science, Tempe, AZ; John Kouvetakis, Arizona State Univ, Dept of Chemistry & Biochem, Tempe, AZ; David J. Smith, Arizona State Univ, Dept of Physics & Astronomy, Tempe, AZ.

Cb14.49
NONLINEAR OPTICAL MAPPING OF SILICON CARBIDE POLYTYPES IN 6H-SiC EPILAYERS, Gunter Lupke, RWTH Aachen, Inst of Semiconductor Electronics, Aachen, GERMANY; C. Meyer, E. Stein von Kamienski, A. Golz, Heinrich Kurz, Rheinisch-Westfalische Technische Hochschule, Inst of Semiconductor Electronics II, Aachen, GERMANY.

Cb14.50
THERMODYNAMIC ANALYSIS OF BLANKET AND SELECTIVE EPITAXY OF SiC ON Si AND SiO MASKED Si, Ying Gao, James H. Edgar, Kansas State Univ, Dept of Chemical Engr, Manhattan, KS.

Cb14.51
XPS STUDY OF CLOSED CURVED GRAPHITE-LIKE CARBON (CCGS), Vladimir L. Kuznetsov, Yurii V. Butenko, Sergei V. Kosheev, Andrei I. Boronin, Ren II. Kvon, Boreskov Inst of Catalysis, Novosibirsk, RUSSIA; S. M. Pimenov, Inst of General Physics, Moscow, RUSSIA.

Cb14.52
NUCLEATION, MICROSTRUCTURE, AND PHASE STABILITY OF NANOCRYSTALLINE DIAMOND FILM, Dieter M. Gruen, Dan Zhou, Alan R. Krauss, Argonne National Laboratory, Materials Science & Chemistry Div, Argonne, IL; Larry A. Curtiss, Argonne National Laboratory, Chemical Technology Div, Argonne, IL; Sanford Asher, Univ of Pittsburgh, Dept of Chemistry, Pittsburgh, PA; Louis J. Terminello, Lawrence Livermore National Laboratory, Dept of Chemistry & Matls Science, Livermore, CA.

SESSION Cb15: DIAMOND FILMS
Chairs: R. P. H. Chang and Tom A. Friedmann
Friday Morning, December 6, 1996
Salon F (M)

8:30 AM Cb15.1
MORPHOLOGY AND QUANTITATIVE NITROGEN IMPURITY MEASUREMENTS IN HOMOEPITAXIAL CHEMICAL VAPOR DEPOSITED DIAMOND, Shane A. Catledge, Yogesh K. Vohra, C. Yan, H. T. Tohver, Univ of Alabama-Birmingham, Dept of Physics, Birmingham, AL.

8:45 AM Cb15.2
THE CONTROL OF THE HYDROGEN CONTENT OF DIAMOND-LIKE CARBON FILMS, Soon-Cheon Seo, SUNY-Albany, Dept of Physics, Albany, NY; David C. Ingram, Ohio Univ, Dept of Physics, Athens, OH.

9:00 AM Cb15.3
LASER ANNEALING MODIFICATION OF DIAMOND-LIKE ATOMIC-SCALE COMPOSITE FILMS STUDIED BY MICRO RAMAN SPECTROSCOPY, Junzuo Wan, Fred H. Pollak, Brooklyn College, Dept of Physics, Brooklyn, NY; Benjamin F. Dorfman, Atomic-Scale Design Inc, Stony Brook, NY.

9:15 AM Cb15.4
THE EFFECT OF LASER INTENSITY ON THE PROPERTIES OF CARBON PLASMA AND DEPOSITED FILM, H. C. Ong, Northwestern Univ, Matls Res Ctr, Evanston, IL; J. Y. Dai, Northwestern Univ, Dept of MS&E, Evanston, IL; R. P. H. Chang, Northwestern Univ, Materials Research Ctr, Evanston, IL.

9:30 AM Cb15.5
RESIDUAL STRESS RELAXATION OF AMORPHOUS TETRAHEDRAL CARBON FILMS INDUCED BY THERMAL ANNEALING, Thomas A. Friedman, Sandia National Laboratories, Albuquerque, NM; John P. Sullivan, Sandia National Laboratories, Adv Materials & Devices Sciences, Albuquerque, NM; D. R. Tallant, Douglas L. Medlin, Sandia National Laboratories, Albuquerque, NM.

9:45 AM BREAK

SESSION Cb16: CARBIDE AND NITRIDE FILMS
Chairs: Otto Knotek and Nancy A. Missert
Friday Morning, December 6, 1996
Salon F (M)

10:15 AM Cb16.1
METAL OXIDE SURFACE MODIFICATIONS WITH OTHER METAL OXIDES AND METAL CARBIDES, Richard C. Stephenson, Clarkson Univ, Ctr for Adv Materials Processing, Potsdam, NY; Richard E. Partch, Clarkson Univ, Dept of Chemistry, Potsdam, NY.

10:30 AM Cb16.2
WEAR RESISTANT AMORPHOUS PVD B-N-C FILMS FOR TRIBOLOGICAL APPLICATIONS, Otto Knotek, Erich Lugscheider, RWTH Aachen, Materials Science Inst, Aachen, GERMANY; Cyrus Barimani, Christian Siry, Aachen Univ of Technology, Materials Science Inst, Aachen, GERMANY.

10:45 AM Cb16.3
AN INVESTIGATION OF THE EFFECTS OF TIN ON THE SURFCE OF FLOAT GLASSES, Donghun Lee, Alfred Univ, NY State College of Ceramics, Alfred, NY; Robert A. Condrate, NYS College of Ceramics, Alfred Univ, Alfred, NY.

11:00 AM Cb16.4
GROWTH OF POLYCRYSTALLINE AEN THIN FILMS ON GLASS, WITH A COMPLETE ORIENTATION, DEPOSITED AT OBLIQUE-ANGLE INCIDENCE, Alejandro Rodriguez-Navarro, Juan M. Garcia-Ruiz, CSIC, Inst Andaluz de Ciencias de la Tierra, Granada, SPAIN; Wilfredo Otano-Rivera, Pennsylvania State Univ, Intercollege Matls Res Lab, University Park, PA; R. Messier, Pennsylvania State Univ, Dept of Engr Sci & Mechanics, University Park, PA.

11:15 AM Cb16.5
EFFECTS OF THE PLASMA CONDITIONS ON THE BONDING TYPE IN CARBON NITRIDE THIN FILMS, Juan M. Mendez, UNAM, Inst de Investigaciones en Materiales, Mexico City, MEXICO; Stephen Muhl, UNAM, Estado Solido y Criogenia, Mexico City, MEXICO; Sergio Jimenez, IPN, Dept de Fisica, Mexico City , MEXICO.

11:30 AM Cb16.6
GROWTH OF SiC CRYSTALS CONSISTING OF A PREDOMINANTLY CARBON NITRIDE NETWORK, Dhananjay Manohar Bhusari, C. K. Chen, K. H. Chen, T. J. Chuang, Inst of Atomic & Molecular Sci, Taipei, TAIWAN; L. C. Chen, National Taiwan Univ, Ctr for Condensed Matter Sci, Taipei, TAIWAN.

11:45 AM Cb16.7
X-RAY REFLECTIVITY STUDIES OF THE DENSITY AND THICKNESS OF BN THIN FILMS, Nancy A. Missert, Tom A. Friedmann, Sandia National Laboratories, Albuquerque, NM; Paula P. Newcomer, Sandia National Laboratories, Org 1152, Albuquerque, NM; Paul B Mirkarimi, Kevin F. McCarty, Douglas L. Medlin, Sandia National Laboratories, Livermore, CA.