1996 MRS Fall Meeting & Exhibit

Chairs

Robert Hamers -- Univ of Wisconsin-Madison
David Smith -- Arizona State Univ

Symposium Support

• Digital Instruments, Inc.
• JEOL USA, Inc.
• Park Scientific
• Philips Electronic Instruments Co
• TopoMetrix Corp.

* Invited paper

SESSION G1: ELECTRON MICROSCOPY AT INTERFACES
Chair: David J. Smith
Tuesday Morning, December 3, 1996
Yarmouth/Vineyard (M)

9:00 AM *G1.1
DETERMINATION OF ATOMIC STRUCTURE AND BONDING AT SURFACES AND INTERFACES BY HIGH-RESOLUTION STEM, S. J. Pennycook, Peter D. Nellist, Oak Ridge National Laboratory, Solid State Div, Oak Ridge, TN; D. J. Wallis, N. D. Browning, Univ of Illinois-Chicago, Dept of Physics, Chicgao, IL.

9:30 AM G1.2
PROBING THE 3D STRUCTURE OF INTERFACES AND DEFECTS THROUGH ELECTRON ENERGY LOSS SPECTROSCOPY, D. J. Wallis, N. D. Browning, Univ of Illinois-Chicago, Dept of Physics, Chicgao, IL.

9:45 AM G1.3
THE EFFECT OF STRAIN RELAXATION MECHANISMS ON THE ELECTRICAL PROPERTIES OF EPITAXIALLY GROWN CaF /Si(111) HETEROSTRUCTURES, L. J. Schowalter, Rensselaer Polytechnic Inst, Ctr of Integrated Elect & Elect Mfg, Troy, NY; Byong Man Kim, Carl A. Ventrice, Rensselaer Polytechnic Inst, Dept of Physics, Troy, NY; Thomas G. Thundat, Oak Ridge National Laboratory, Health Science Research Div, Oak Ridge, TN; Vincent P. LaBella, Rensselaer Polytechnic Inst, Dept of Physics, Troy, NY.

10:00 AM BREAK

10:30 AM G1.4
GRAIN BOUNDARIES IN DIAMOND FILMS ON Si(001), D. Wittorf, C. L. Jia, W. Jager, B. Grushko, K. Urban, Forschungszentrum Julich, Inst for Festkorperforschung, Julich, GERMANY; X. Jiang, M. Paul, C. P. Klages, Fraunhofer-Inst, Braunschweig, GERMANY.

10:45 AM G1.5
ATOMIC-SCALE STUDIES OF SOLUTE SEGREGATION AT CERAMIC/METAL HETEROPHASE INTERFACES , Dmitriy A. Shashkov, Northwestern Univ, Dept of MS&E, Evanston, IL.

11:00 AM G1.6
METAL-ZnO INTERFACES STUDIED BY HIGH RESOLTUION TRANSMISSION ELECTRON MICROSCOPY, Jeff Th. M. De Hosson, W. P. Vellinga, H. B. Groen, Bart J. Kooi, Univ of Groningen, Dept of Applied Physics, Groningen, NETHERLANDS.

11:15 AM G1.7
MISMATCH AND MISALIGNMENT AT INTERFACES BETWEEN Ag AND STUDIED WITH HRTEM, Bart J. Kooi, H. B. Groen, Jeff Th. M. De Hosson, Univ of Groningen, Dept of Applied Physics, Groningen, NETHERLANDS.

11:30 AM G1.8
A COMBINED-TECHNIQUES APPROACH TO STUDYING HETEROPHASE INTERFACES USING HREM, Z-CONTRAST IMAGING AND EELS, Elizabeth C. Dickey, Vinayak P. Dravid, Northwestern Univ, Dept of MS&E, Oak Ridge, TN; S. J. Pennycook, Oak Ridge National Laboratory, Solid State Div, Oak Ridge, TN; David J. Wallis, Univ of Illinois-Chicago, Dept of Physics, Chicago, IL; Peter D. Nellist, Oak Ridge National Laboratory, Solid State Div, Oak Ridge , TN.

11:45 AM G1.9
LINE UP OF 90 DOMAIN BOUNDARIES AT INTERFACE DISLOCATIONS IN BaTiO /LaAlO 100}, Z.-R. Dai, Beijing Laboratory of Electron Microscopy,; Z. L. Wang, Georgia Inst of Technology, School of MS&E, Atlanta, GA; J. Zhang, Advanced Technology Materials Inc.

SESSION G2: ATOMIC STRUCTURE AT INTERFACES
Chair: John H. Weaver
Tuesday Afternoon, December 3, 1996
Yarmouth/Vineyard (M)

1:30 PM *G2.1
CROSS-SECTIONAL SCANNING TUNNELING MICROSCOPY OF SEMICONDUCTOR HETEROSTRUCTURES, Randall M. Feenstra, Carnegie Mellon Univ, Dept of Physics, Pittsburgh, PA.

2:00 PM G2.2
CHEMICAL IMAGING OF InGaAs/InAlAs QUANTUM WELLS, G. Mountjoy, P. A. Crozier, Arizona State Univ, Ctr for Solid State Science, Tempe, AZ; P. L. Fejes, Motorola Inc, Matls Res & Strategic Technologies, Mesa, AZ; R. K. Tsui, G. K. Kramer, Motorola Inc, Phoenix Corp Res Lab, Tempe, AZ.

2:15 PM G2.3
COMPARISON OF ATOMIC-SCALE ELECTRONIC PROPERTIES OF DONORS AND ACCEPTORS IN GaAs(110), Philipp G. Ebert, C. Domke, M. Heinrich, Forschungszentrum Julich, IFF, Julich, GERMANY; K. Urban, Forschungszentrum Julich, Inst for Festkorperforschung, Julich, GERMANY.

2:30 PM G2.4
CROSS-SECTIONAL AFM OF OXIDIZED POROUS-SILICON , J. Poler, C. Z. Carlin, B. Drozd, Univ of North Carolina, Dept of Chemistry, Charlotte, NC; A. Filios, M. A. Hasan, Univ of North Carolina , Dept of Electrical Engr, Charlotte, NC.

2:45 PM G2.5
CHARACTERIZATION OF HETEROINTERFACES IN THIN-FILM TRANSISTORS BY CROSS-SECTIONAL TRANSMISSION ELECTRON MICROSCOPY, Kotaro Kuroda, Nagoya Univ, Dept of Quantum Engr, Aichi-ken, JAPAN; Satoshi Tsuji, Yohichi Hayashi, IBM Japan Ltd, Display Technology, Kanagawa, JAPAN; Hiroyasu Saka, Nagoya Univ, Dept of Quantum Engr, Aichi-ken, JAPAN.

3:00 PM G2.6
THE FRINGING FIELD SURROUNDING A WEDGE-SHAPED TEM FOIL CONTAINING A p-n JUNCTION OR AN INTERFACIAL SPACE CHARGE LAYER, R. E. Dunin-Borkowski, W. O. Saxton, Cambridge Univ, Dept of Matls Science & Metallurgy, Cambridge, UNITED KINGDOM.

3:15 PM BREAK

3:45 PM *G2.7
SURFACE STRESS, STRUCTURE, AND STABILITY: HIGH-INDEX Si AND III-V(001) RECONSTRUCTIONS, L. J. Whitman, Naval Research Laboratory, Washington, DC.

4:15 PM G2.8
STM STUDY OF INITIAL GROWTH OF TITANIUM SILICIDE ON Si(111), Hideki Kuriyama, Satoru Matsumoto, Satoshi Tatsukawa, Masaru Umekawa, Shigeki Ohara, Keio Univ, Dept of Electrical Engr, Yokohama, JAPAN.

4:30 PM G2.9
ATOMIC-FORCE MICROSCOPY OF GOLD NANOCRYSTALLITES ON SMOOTH AND STEPPED STRONTIUM TITANATE SURFACES, John D. Hamilton, Michael R. Papantonakis, Richard F. Haglund, Vanderbilt Univ, Dept of Physics & Astronomy, Nashville, TN; Mukund Godbole, Douglas H. Lowndes, Oak Ridge National Laboratory, Solid State Div, Oak Ridge, TN.

4:45 PM G2.10
CREATION OF NANOCRYSTAL VIA A STM TIP-INDUCED SOLID-SOLID PHASE TRANSITION , Jian Zhang, Jie Liu, Jinlin Huang, Charles M. Lieber, Harvard Univ, Dept of Chemistry, Cambridge, MA.

SESSION G3: ELECTRON MICROSCOPY AT INTERFACES AND SURFACES
Chair: S. J. Pennycook
Wednesday Morning, December 4, 1996
Yarmouth/Vineyard (M)

8:30 AM *G3.1
ANALYSIS OF INTERFACE STRUCTURES BY QUANTITATIVE HIGH-RESOLUTION TRANSMISSION ELECTRON MICROSCOPY, Frank Ernst, Max-Planck-Inst, Metallforschung, Stuttgart, Germany.

9:00 AM G3.2
QUANTITATIVE HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY - THE ROLE OF SPACE CHARGE IN BLURRING IMAGES, J Murray Gibson, Univ of Illinois-Urbana, Dept of Physics & Matls Science, Urbana, IL; A. M. Schwartz, Univ of Illinois-Urbana, Dept of Physics, Urbana, IL.

9:15 AM G3.3
THE SCATTERING DISTRIBUTION FROM DOPED AND UNDOPED SEMICONDUCTORS AS A FUNCTION OF ANGLE AND ENERGY LOSS IN THE ELECTRON MICROSCOPE, C. B. Boothroyd, R. E. Dunin-Borkowski, Cambridge Univ, Dept of Matls Science & Metallurgy, Cambridge, UNITED KINGDOM.

9:30 AM G3.4
QUANTITATIVE HIGH RESOLUTION ELECTRON MICROSCOPY OF GRAIN BOUNDARIES, Geoffrey H. Campbell, Lawrence Livermore National Laboratory, Chem & Matls Sci Directorate, Livermore, CA; Dov Cohen, Univ of Minnesota, Dept of CE&MS, Minneapolis, MN; Wayne E. King, Lawrence Livermore National Laboratory, Dept of Chem & Matl Science, Livermore, CA; C. Barry Carter, Univ of Minnesota, Dept of CE&MS, Minneapolis, MN.

9:45 AM G3.5
GRAIN BOUNDARY DISLOCATION STRUCTURE AND MOTION IN AN ALUMINUM =3 BICRYSTAL, Douglas L. Medlin, Sandia National Laboratories, Livermore, CA; Stephen M. Foiles, Sandia National Laboratories, Computational Materials Science, Livermore, CA; C. Barry Carter, Univ of Minnesota, Dept of CE&MS, Minneapolis, MN.

10:00 AM BREAK

10:30 AM *G3.6
RELATIONSHIP BETWEEN INTERFACE AND DISLOCATION STRUCTURE AND THE MECHANICAL PROPERTIES OF METALS AND INTERMETALLICS, Michael J. Mills, Hamish L. Fraser, Ohio State Univ, Dept of MS&E, Columbus, OH.

11:00 AM G3.7
ATOMIC STRUCTURE OF 66 [ 10] ASSYMETRIC TILT GRAIN BOUNDARY IN ALUMINUM, M. Shamsuzzoha, Univ of Alabama, School of Mines & Energy Dev, Tuscaloosa, AL; P. A. Deymier, Univ of Arizona, Dept of MS&E, Tucson, AZ; David J. Smith, Arizona State Univ, Dept of Physics & Astronomy, Tempe, AZ.

11:15 AM G3.8
STRESS INDUCED STRUCTURAL CHANGES OF INTERPHASE BOUNDARIES AND MECHANICAL TWINS IN TWO-PHASE -TITANIUM ALUMINIDES, Fritz Appel, Richard Wagner, GKSS-Research Center, Inst for Materials Research, Geesthacht, GERMANY.

11:30 AM G3.9
ATOMIC-RESOLUTION ELECTRON MICROSCOPY OF PRECIPITATES IN AN INDUSTRIAL TiAl ALLOY, Beverley Inkson, Max-Planck-Inst, Inst fur Werkstoffwissenshaft, Stuttgart, GERMANY; Frank Ernst, Max-Planck-Inst, Inst fur Metallforschung, Stuttgart, GERMANY; Manfred Ruhle, Max-Planck-Inst, Inst Werkstoffwinssenshaft, Stuttgart, GERMANY.

SESSION G4: SCANNED PROBE MICROSCOPY OF SURFACE STRUCTURE AND DYNAMICS
Chair: Lloyd J. Whitman
Wednesday Afternoon, December 4, 1996
Yarmouth/Vineyard (M)

1:30 PM *G4.1
ACCELERATION OF MASS TRANSPORT WITH DIRECT CURRENT ON Si(111), Ellen D. Williams, Univ of Maryland, Dept of Physics, College Park, MD.

2:00 PM G4.2
SCANNING TUNNELING MICROSCOPY STUDY OF PSEUDO-VACANCY DIFFUSION AT Si(111)-7x7 SURFACES, Ing-Shouh Hwang, Rong-Li Lo, Tien T. Tsong, Inst of Physics, Academia Sinica, Taipei, TAIWAN.

2:30 PM *G4.4
ETCHING INVESTIGATIONS ON AN ATOMIC LEVEL: Br-GaAs(110), John H. Weaver, C.-Y. Cha, J. Brake, D. Owens, B. Y. Han, Univ of Minnesota, Dept of Chem Engr & Matls Science, Minneapolis, MN.

3:00 PM G4.5
THE SELECTIVE ABSTRACTION OF IODINE ATOMS FROM MOLECULES BY THE Si(111)-7x7 SURFACE, Yong Liu, Andrew Kummel, Univ of California-San Diego, Dept of Chemistry, La Jolla, CA.

3:15 PM BREAK

3:45 PM G4.6
THE ROLE OF HYDROGEN ON THE TRANSITION OF THE Si(111) SURFACE, Dominic R. Alfonso, International Centre for Theoretical Physics, Condensed Matter Section, Trieste, ITALY; Cecilia Noguez, UNAM, Estado Solido, Mexico , MEXICO; David A. Drabold, Sergio E. Ulloa, Ohio Univ, Dept of Physics & Astronomy, Athens, OH.

4:00 PM G4.7
STM STUDY OF RECONSTRUCTION ON Si(111), Shigeki Ohara, Satoru Matsumoto, Satoshi Tatsukawa, Masaru Umekawa, Hideki Kuriyama, Keio Univ, Dept of Electrical Engr, Yokohama, JAPAN.

4:15 PM G4.8
C(4x4)-Bi STRUCTURE FORMED BY DEPOSITING ON Si(001) AT Bi DESORPTION TEMPERATURE, Kazushi Miki, Electrotechnical Laboratory, Ibaraki, JAPAN; D. G. Pettifor, G.A.D. Briggs, D. R. Bowler, J.H.G. Owen, Oxford Univ, Dept of Materials, Oxford, UNITED KINGDOM.

4:30 PM G4.9
PHOTOEXCITED CARRIER EFFECT ON IMAGING OF ORGANIC MOLECULES ADSORBED ON Si(100)2x1 SURFACES, Yasushi Maeda, Hitachi Ltd, Chiba, JAPAN; Takuya Matsumoto, Osaka Univ, Inst of Scientific & Industrial Research, Osaka, JAPAN; Tomoji Kawai, Osaka Univ, ISIR-Sanken, Ibaraki Osaka, JAPAN.

4:45 PM G4.10
NEAR-FIELD SCANNING OPTICAL AND ATOMIC FORCE MICROSCOPY USING A MICROFABRICATED PHOTOCANTILEVER, Yuriko Tanaka, Kenji Fukuzawa, Hiroki Kuwano, NTT Integrated Information & System Elctronics Labs, Tokyo, JAPAN.

SESSION G5: POSTER SESSION
Wednesday Evening, December 4, 1996
8:00 P.M.
America Ballroom (W)

G5.1
FERROELECTRIC DOMAINS IN BaTiO SINGLE CRYSTALS: AFM INVESTIGATION, S. Balakumar, J. X. Ma, Chinese Univ of Hong Kong, Dept of Electronic Engr, Shatin, Hong Kong; S. Ganesha Moorthy, Anna Univ, Crystal Growth Centre, Madras, INDIA; J. B. Xu, I. H. Wilson, Chinese Univ of Hong Kong, Dept of Electrical Engr, Shatin NT, HONG KONG.

G5.2
HIGH-RESOLUTION STM IMAGING OF DNA BASE MOLECULES ON SOLID SURFACES, Tomoji Kawai, Hiroyuki Tanaka, Takaomi Nakagawa, Osaka Univ, ISIR-Sanken, Ibaraki Osaka, JAPAN.

G5.3
FRACTURE SURFACE TOPOGRAPHY OF ENERGETIC MATERIALS USING ATOMIC FORCE MICROSCOPY, M.Y. D. Lanzerotti, U.S. Army Research Laboratory, ARDEC, Picatinny Arsenal, NJ.

G5.4
ANALYSIS OF THE ATOMIC STRUCTURES AT HCP/DHCP MARTENSITIC TRANSFORMATION INTERFACES, Thomas Waitz, H. Peter Karnthaler, Univ of Vienna, Inst of Materials Physics, Vienna, AUSTRIA.

G5.5
IN-SITU HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY OF SOLID-LIQUID INTERFACE OF ALUMINA, Sasaki Katsuhiro, Saka Hiroyasu, Nagoya Univ, Dept of Quantum Engr, Nagoya , JAPAN.

G5.6
TIME-DEPENDENT INTERFACIAL REACTION MECHANISM IN A SPINEL-FORMING SOLID STATE REACTION STUDIED BY TEM, Peter Werner, H. Sieber, Dietrich Hesse, R. Hillebrand, Max-Planck-Inst, Microstructure Physics, Halle/Saale, GERMANY.

G5.7
TEM OBSERVATION OF =3 TWIN BOUNDARY IN CVD -SiC, Koji Tanaka, Masanori Kohyama, Mikio Iwasa, Osaka National Research Inst, Dept of Materials Physics, Osaka, JAPAN.

G5.8
ELECTRON MICROSCOPY STUDIES OF THE HIGH TEMPERATURE OXIDATION OF NiAl, Judith C. Yang, Univ of Illinois-Urbana, Dept of Physics, Urbana, IL; Eckart Schumann, Max-Planck-Inst, Inst fur Werkstoffwissenschaft, Stuttgart, GERMANY; Igor Levin, Technion-Israel Inst of Tech, Dept of Materials Engineering, Haifa, ISRAEL; Harald Muellejans, Max-Planck-Inst, Inst Werkstoffwissenschaft, Stuttgart, GERMANY; Manfred Ruhle, Max-Planck-Inst, Inst Werkstoffwinssenshaft, Stuttgart, GERMANY.

G5.9
STM STUDY OF A DEFECT-RELATED Si(001)-c(4x4) SURFACE, Masamichi Yoshimura, Kazuyuki Ueda, Toyota Technological Inst, Nagoya, JAPAN.

G5.10
ATOMIC SCALE STUDIES OF Bi DOPED ZnO POLYCRYSTAL GRAIN BOUNDARIES , Haifeng Wang, Yet-Ming Chiang, MIT, Dept of MS&E, Cambridge, MA.

SESSION G6: ELECTRON MICROSCOPY AT SURFACES AND INTERFACES
Chair: Michael J. Mills
Thursday Morning, December 5, 1996
Yarmouth/Vineyard (M)

8:30 AM *G6.1
ATOMIC STRUCTURE OF INTERFACES IN MAZED Au BICRYSTALS, Crispin Hetherington, Lawrence Berkeley National Laboratory, Berkeley, CA; Uli Dahmen, Lawrence Berkeley National Laboratory, Berkeley, CA; Jean-Michel Penisson, CEN Grenoble, Grenoble, FRANCE.

9:00 AM G6.2
STABILITY OF ORGANOMETALLIC RHENIUM CLUSTERS INVESTIGATED BY A NOVEL TECHNIQUE, Judith C. Yang, Univ of Illinois-Urbana, Dept of Physics, Urbana, IL; John R. Shapley, Univ of Illinois-Urbana, Dept of Chemistry, Urbana, IL; Ajay Singhal, Univ of Illinois-Urbana, Dept of MS&E, Urbana, IL.

9:15 AM G6.3
ATOMIC FORCE MICROSCOPY STUDY OF STABILIZED QUASI-AMORPHOUS CARBON IN THE RANGE OF THICKNESS FROM 5nm TO 300 m, Fred H. Pollak, Brooklyn College, Dept of Physics, Brooklyn, NY; Benjamin F. Dorfman, Atomic-Scale Design Inc, Stony Brook, NY.

9:30 AM G6.4
INTERPRETING THE CONTRAST IN ATOMIC-SCALE RESOLUTION SCANNING PROBE MICROSCOPE IMAGES OF TRANSITION METAL OXIDE SURFACES, Gregory S. Rohrer, Richard L. Smith, Carnegie Mellon Univ, Dept of MS&E, Pittsburgh, PA; M. H. Whangbo, North Carolina State Univ, Dept of Chemistry, Raleigh, NC.

9:45 AM G6.5
IN-SITU OXIDATION OF COPPER THIN FILMS USING TRANSMISSION ELECTRON MICROSCOPY, Judith C. Yang, Univ of Illinois-Urbana, Dept of Physics, Urbana, IL; J Murray Gibson, Univ of Illinois-Urbana, Dept of Physics & Matls Science, Urbana, IL; Deirdre L. Olynick, Univ of Illinois-Urbana, Urbana, IL; Mark Yeadon, Univ of Illinois-Urbana, Dept of Physics, Urbana, IL.

10:00 AM BREAK

10:30 AM G6.6
HIGH RESOLUTION MICROSCOPY AND COMPUTER SIMULATION STUDIES OF [001] TILT BOUNDARIES IN , Imtiaz Majid, Y. Liu, R. W. Balluffi, J. B. Vander Sande, MIT, Dept of MS&E, Cambridge, MA.

10:45 AM G6.7
HREM STUDY OF THE SURFACE ARRANGEMENT OF VANADIUM DOPED TITANIA (ANATASE), Galina N. Kryukova, Galina A. Zenkovets, Boreskov Inst of Catalysis, Russian Academy of Sciences, Novosibirsk, RUSSIA.

11:00 AM G6.8
QUANTITATIVE ANALYSIS OF DISPLACEMENT AT 90 DOMAIN BOUNDARIES IN , Frances Ross, Roar Kilaas, Lawrence Berkeley National Laboratory, Natl Ctr for Electron Microscopy, Berkeley, CA; Etienne Snoeck, CNRS, CEMES, Toulouse, FRANCE.

11:15 AM G6.9
QUANTITATIVE CHEMICAL PROFILING APPROACHING ATOMIC RESOLUTION: PLANAR FAULTS IN NONSTOICHIOMETRIC , Hui Gu, ERATO JST, Dept of Ceramics Superplasticity, Nagoya, JAPAN; Miran Ceh, Univ of Ljubljana, J Stefan Inst, Ljubljana, SLOVENIA.

SESSION G7:
Chair: Crispin Hetherington
Thursday Afternoon, December 5, 1996
Yarmouth/Vineyard (M)

1:30 PM *G7.1
IMAGING THE DIMERS IN Si (111) 7x7, Laurence D. Marks, Northeastern Univ, Dept of MS&E, Evanston, IL; T. Ichimiya, Sumio Iijima, NEC Corporation, Fundamental Research Lab, Ibaraki, JAPAN; Erman Bengu, Richard Plass, Northeastern Univ, Dept of MS&E, Evanston, IL.

2:00 PM G7.2
SURFACE ATOMIC-RESOLUTION MICROSCOPY OF SULFATED-ZIRCONIA AND Fe/Mn PROMOTED SULFATED-ZIRCONIA, Mohamed Benaissa, UNAM, Inst de Fisica,; G. Diaz, UNAM, Inst de Fisica, Mexico, MEXICO; Miguel Jose Yacaman, UNAM, Inst de Fisica, Mexico, MEXICO.

2:15 PM G7.3
ATOMIC STRUCTURES OF GRAIN BOUNDARIES IN CVD DIAMOND THIN FILM, Yaogang Zhang, H. Ichinose, Y. Ishida, K. Ito, Univ of Tokyo, Dept of Matls Science, Tokyo, JAPAN; M Nakanose, Nissan Motor Corporation, Tokyo, JAPAN.