Meetings & Events

fall 1996 logo1996 MRS Fall Meeting & Exhibit

December 2 - 6, 1996 | Boston
Meeting Chairs:
 Werner Lutze, Karen Maex, Karl Sieradzki




Symposium I—Materials in Microsystems

Chairs

Miko Elwenspoek, University of Twente
Hiroyuki Fujita, University of Tokyo
Michael Reed, Carnegie Mellon University
Yuji Uenishi, NTT Basic Research Labs

* Invited paper

SESSION I1: MATERIALS FOR CONSTRUCTION AND PACKAGING
Chairs: Hiroyuki Fujita and Maruno Tohru
Wednesday Morning, December 4, 1996
Independence East (S)
8:30 AM *I1.1
TECHNOLOGY FOR MICROASSEMBLING, Stefan Johansson, Univ of Uppsala, Dept of Materials Science, Uppsala, SWEDEN.

9:00 AM I1.2
EXCIMER LAMP UV ACTIVATION OF EPOXY SUBSTRATES FOR ELECTROLESS PLATING, Linda Campion, Mary O'Reilly, NMRC, Dept of Matls Group, Cork, IRELAND; Daniel Macauley, Patrick V. Kelly, Gabriel M. Crean, NMRC, Cork, IRELAND.

9:15 AM I1.3
A MEMS-BASED MAGNETOSTRICTIVE MAGNETOMETER, T. J. Kistenmacher, R. Osiander, S. A. Ecelberger, R. B. Givens, D. K. Wickenden, J. C. Murphy, Johns Hopkins Univ, Applied Physics Lab, Laurel, MD.

9:30 AM I1.4
HIGHLY MAGNETOSTRICTIVE AMORPHOUS WIRES WITH A CLAD-CORE STRUCTURE AS PROPAGATION MEDIA OF MAGNETOELASTIC WAVES, M. Inoue, K. Nishimura, Toyohashi Univ of Technology, Dept of Elect & Electronic Engr, Aichi, JAPAN; P. B. Lim, Toyohashi Univ of Technology, Dept of Electrical & Electronic Engr, Aichi, JAPAN; P. T. Squire, Univ of Bath, Dept of Physics, Bath, UNITED KINGDOM; N. Fujita, Osaka Prefecture Univ, Dept of Electronics & Computer Science, Osaka, JAPAN; T. Fujii, Toyohashi Univ of Technology, Dept of Electrical & Electronic Engr, Toyohashi Aichi, JAPAN.

9:45 AM I1.5
INVESTIGATION OF THERMALLY GROWN tex2html_wrap_inline191 AS A DIFFUSION BARRIER LAYER FOR THE DEPOSITION OF NdFeB THIN FILMS ON Si(100) AT HIGH TEMPERATURES, G. K. Muralidhar, Dinesh Sood, R. B. Zmood, Royal Melbourne Inst of Tech, Dept of Electrical Engr, Melbourne, AUSTRALIA; S. Mohan, M. Swarnalatha, Indian Inst of Science, Dept of Instrumentation, Bangalore, INDIA.

10:00 AM BREAK

10:30 AM *I1.6
HARD QUASIAMORPHOUS CARBON-PROSPECTIVE CONSTRUCTION MATERIAL FOR MEMS, Benjamin F. Dorfman, Atomic-Scale Design Inc, Stony Brook, NY.

11:00 AM I1.7
XRD AND XTEM INVESTIGATION OF POLYCRYSTALLINE SILICON CARBIDE ON POLYSILICON , Shuvo Roy, Case Western Reserve Univ, Cleveland, OH; C. A. Zorman, Case Western Reserve Univ, Dept of Electrical Engr & Applied Physics, Cleveland, OH; C. Wu, Case Western Reserve Univ, Dept of MS&E, Cleveland, OH; A. J. Fleischman, Mehran Mehregany, Case Western Reserve Univ, Dept of Electrical Engr & Applied Physics, Cleveland, OH.

11:15 AM I1.8
MOLECULAR COATINGS FOR REDUCED ADHESION IN MICROMACHINED STRUCTURES, Maarten P. de Boer, Robert R. Rye, Terry A. Michalske, Sandia National Laboratories, Dept of Surface & Interface Science, Albuquerque, NM.

11:30 AM I1.9
ELASTIC PROPERTIES OF DIAMONDLIKE CARBON THIN FILMS: A RILLOUIN SCATTERING STUDY, Othon R. Monteiro, Ian G. Brown, Lawrence Berkeley National Laboratory, AFRD, Berkeley, CA; R. Sooryakumar, M. Chirita, Ohio State Univ, Dept of Physics, Columbus, OH.

11:45 AM I1.10
HARDENING OF NICKEL ALLOYS BY ION IMPLANTATION OF TITANIUM AND CARBON, Samuel M. Myers, David M. Follstaedt, J. A. Knapp, Todd R. Christenson, Sandia National Laboratories, Albuquerque, NM.

SESSION I2: MATERIALS FOR MICRO-OPTOMECHANICAL SYSTEMS
Chairs: Ernst Obermeier and Yuji Uenishi
Wednesday Afternoon, December 4, 1996
Independence East (S)
1:30 PM *I2.1
POLYMERS FOR OPTICAL-COMMUNICATIONS DEVICE FABRICATION - OPTICAL ADHESIVES AND POLYIMIDE WAVEGUIDES, Tahru Maruno, NTT Basic Research Labs, Opto-electronics Lab, Tokyo, JAPAN.

2:00 PM I2.2
MATERIALS AND PROCESSING ISSUES FOR PHOTOINSCRIBED ACTIVE AND PASSIVE INTEGRATED OPTICS DEVICES FROM HYBRID SOL-GEL GLASSES, Mark P. Andrews, Galina Milova, Manuel Binoist, Jason Chisham, M. A. Fardad, McGill Univ, Dept of Chemistry, Montreal, CANADA; A. Malek-Tabrizi, S. Iraj Najafi, Ecole Polytechnique , Photonics Research Group, Montreal, CANADA.

2:15 PM I2.3
SUBMICRON-SIZE SOLID-STATE SURFACE MODIFICATION BY INTRACAVITY LASER RADIATION TREATMENT, Osipov P. Vladimir, Vasily V. Valyavko, Inst of Physics, Academy of Sciences of Belarus, Minsk, BELARUS.

2:30 PM BREAK

3:00 PM I2.4
MICRO-OPTICAL EMISSION CENTERS IN DISCONTINUOUS METAL FILMS, Igor Konovalov, Toronto, CANADA; Klavdia Pilipchak, Inst of Physics, Dept of Physical Electronics, Kiev, UKRAINE; Oleg Kiyaev, Inst of Physics, Dept of Physical Electronics, Kiev, UKRAINE.

3:15 PM I2.5
FTIR ANALYSIS OF PECVD Si SUBOXIDES SUITABLE FOR OPTICAL WAVEGUIDES, Mauricio Moreno, Univ de Barcelona, Facultat de Fisica, Barcelona, SPAIN; J. A. Moreno, S. A. Bota, Univ de Barcelona, Dept of EME, Barcelona, SPAIN; J. Munoz, Univ Autonoma Barcelona, Centro Nacional de Microelectronica, Bellaterra, SPAIN; C. Dominguez, Univ Autonoma Barcelona, Centro National de Microelectronica, Bellaterra, SPAIN; Juan Ramon Morante, Univ de Barcelona, Dept de Fisica Aplicada i Electronica, Barcelona, SPAIN.

3:30 PM I2.6
PATTERNED SOL-GEL STRUCTURES BY MICRO MOLDING IN CAPILLARIES, Michael J. Lochhead, Paul Yager, Univ of Washington, Dept of Bioengineering, Seattle, WA.

I2.9
THERMAL CONDUCTIVITY OF CVD-DIAMOND FILMS BETWEEN 80 AND 700 K, Eckert Jansen, Technical Univ Berlin, Berlin, GERMANY; Ernst Obermeier, Technische Univ Berlin, Berlin, GERMANY.

I2.8
APPLICATION OF EVAPORATED GLASS IN THE ANODIC BONDING PROCESS, Peter Krause, Michael Sporys, Technical Univ Berlin, Dept of Electrical Engr, Berlin, GERMANY; Ernst Obermeier, Technische Univ Berlin, Berlin, GERMANY; K. Lange, S. Grigull, Research Center Rossendorf Inc, Inst Ion Beam Physics & Matls Research, Dresden, GERMANY.

I2.13
CHARACTERISTICS OF ELECTRICAL DEVICES USING PZT THIN FILMS WITH Pt/Ti, tex2html_wrap_inline193 and Ru BOTTOM ELECTRODES, Young Soo Yoon, Joon Han Kim, Tian-Hoe Lim, Alex Bonne, Dennis L. Polla, Univ of Minnesota, Dept of Electrical Engr, Minneapolis, MN.

I2.16
ELECTRICAL PROPERTIES OF PZT(54/46) THIN FILMS FOR MEMS DEVICES, Hyeon-Seag Kim, Dennis L. Polla, Stephen A. Campbell, Univ of Minnesota, Dept of Electrical Engr, Minneapolis, MN.

I2.18
EXPERIMENTAL ANALYSIS OF THE PROCESS OF ANODIC BONDING USING AN EVAPORATED GLASS LAYER, Woo-Beom Choi, KIST, Electronics & Information Tech Div, Cheongryang, SOUTH KOREA; Byeong-Kwon Ju, Yun-Hi Lee, KIST, Div of Electronics & Information Tech, Seoul, SOUTH KOREA; Nam-Yang Lee, Ken-Ha Koh, Dong-Xi Shin, Ajou Univ, Information Display Research Inst, Suwon, SOUTH KOREA; Malcolm R. Haskard, Univ of South Australia, Microelectronic Centre, The Levels, AUSTRALIA; Man-Young Sung, Korea Univ, Dept of Electrical Engr, Seoul, SOUTH KOREA; Myung-Hwan Oh, KIST, Div of Electronics & Information Tech, Seoul, SOUTH KOREA.

I2.10
A STUDY ON HERMETIC GLASS SEALING USING A MODIFIED DIRECT BONDING METHOD, Byeong-Kwon Ju, KIST, Div of Electronics & Information Tech, Seoul, SOUTH KOREA; Chang-Gi Ko, KIST, Electronics & Information Tech Div, Seoul, SOUTH KOREA; Yun-Hi Lee, KIST, Div of Electronics & Information Tech, Seoul, SOUTH KOREA; Jung-Ho Park, Korea Univ, Dept of Electronics, Seoul, SOUTH KOREA; Nam-Yang Lee, Ken-Ha Koh, Dong-Xi Shin, Ajou Univ, Information Display Research Inst, Suwon, SOUTH KOREA; Malcolm R. Haskard, Univ of South Australia, Microelectronic Centre, The Levels, AUSTRALIA; Myung-Hwan Oh, KIST, Div of Electronics & Information Tech, Seoul, SOUTH KOREA.

I2.17
A LOW TEMPERATURE DIRECT BONDING METHOD USING AN ELECTRON-BEAM EVAPORATED SILICON- OXIDE INTERLAYER, Heung-Woo Park, Byeong-Kwon Ju, Yun-Hi Lee, KIST, Div of Electronics & Information Tech, Seoul, SOUTH KOREA; Jung-Ho Park, Korea Univ, Dept of Electronics, Seoul, SOUTH KOREA; Nam-Yang Lee, Ken-Ha Koh, Dong-Xi Shin, Ajou Univ, Information Display Research Inst, Suwon, SOUTH KOREA; Malcolm R. Haskard, Univ of South Australia, Microelectronic Centre, The Levels, AUSTRALIA; Myung-Hwan Oh, KIST, Div of Electronics & Information Tech, Seoul, SOUTH KOREA.

I2.7
MEASUREMENTS OF RESIDUAL STRESS IN LOW-STRESS SILICON NITRIDE THIN FILM USING MICRO-ROTATING STRUCTURES, Xin Zhang, Yitshak Zohar, Hong Kong Univ Sci & Tech, Dept of Mech Engr, Kowloon, HONG KONG; Tong-Yi Zhang, Hong Kong Univ Sci & Tech, Dept of ME, Kowloon, HONG KONG.

I2.11
INFLUENCE OF THE STRUCTURAL PARAMETERS OF POLYSILICON FILMS ON THE PIEZORESISTIVE PROPERTIES AT HIGH TEMPERATURE, Pascal Kleimann, INSA LYON, LPM, UMR C5511, Villeurbanne, FRANCE; Daniel Barbier, Martine Le Berre, Mustapha Lemiti, Bachir Semmache, INSA LYON, LPM UMR C5511, Villeurbanne, FRANCE.

I2.12
PRESSURE-INDUCED MECHANICAL BEHAVIOR OF PRE-STRESSED Si-SiO tex2html_wrap_inline195 MICROMACHINED MEMBRANES: FINITE ELEMENT MODELING AND EXPERIMENTAL RESULTS7317, Christophe Malhaire, INSA LYON, LPM UMR C5511, Villeurbanne, FRANCE; Martine Le Berre, Daniel Barbier, INSA LYON, LPM UMR C5511, Villeurbanne, FRANCE.

I2.19
MICRO-RAMAN STUDY OF STRESS DISTRIBUTION AND THERMAL RELAXATION OF OXIDIZED SILICON MEMBRANES, Christophe Malhaire, INSA LYON, LPM UMR C5511, Villeurbanne, FRANCE; Yannick Guyot, Univ Lyon I, LPCML, UMR 5620, Villeurbanne, FRANCE; Daniel Barbier, INSA LYON, LPM UMR C5511, Villeurbanne, FRANCE; Abel Sibai, INSA LYON, LPM UMR C5511, Villeurbanne, FRANCE; Bernard Champagnon, Univ Lyon I, LPCML UMR 5620, Villeurbanne, FRANCE; Martine Le Berre, INSA LYON, LPM UMR C5511, Villeurbanne, FRANCE.

I2.14
OPTICAL WAVEGUIDING (Pb, La)(Zr,Ti)O tex2html_wrap_inline197 THIN FILMS PREPARED BY PULSED LASER DEPOSITION, Si Bei Xiong, Z. G. Liu, Xiaoyuan Chen, X. L. Guo, S. N. Zhu, X. Liu, Nanjing Univ, Dept of Physics, Nanjing, CHINA; W. G. Luo, Shanghai Inst of Ceramics, Chinese Academy, Shanghai, CHINA.

I2.15
PULSED LASER DEPOSITION AND ACOUSTIC PROPERTY OF MULTILAYERED PIEZOELECTRIC NONPIEZOELECTRIC FILMS, Wei Sheng Hu, Z. G. Liu, Y-F. Chen, T. Yu, H. W. Zhao, X. B. Hu, X. Liu, Nanjing Univ, Dept of Physics, Nanjing, CHINA; R. X. Wu, Nanjing Univ, Dept of Electical Science & Tech, Nanjing, CHINA.

SESSION I3: CHARACTERIZATION AND TESTING OF MATERIALS FOR MICROSYSTMES
Chairs: Stefan Johansson and Michael L. Reed
Thursday Morning, December 5, 1996
Independence East (S)
8:30 AM *I3.1
MECHANICAL AND THERMOPHYSICAL PROPERTIES OF THIN FILM MATERIALS FOR MEMS: TECHNIQUES AND DEVICES, Ernst Obermeier, Technische Univ Berlin, Berlin, GERMANY.

9:00 AM I3.2
CHARACTERIZATION OF MECHANICAL BEHAVIOR OF THIN FILMS BY DYNAMIC MECHANIC ANALYSIS, J. D. Shi, K. H. Wu, Florida International Univ, Dept of Mechanical Engr, Miami, FL; G. Larkins, Florida International Univ, Dept of Electrical & Computer Engr, Miami, FL.

9:15 AM I3.3
SIMULATION OF DYNAMICS OF PUNCHING OF THIN FILMS, Masao Doyama, Yoshiaki Kogure, Teikyo Univ of Science & Tech, Dept of Materials, Yamanashi, JAPAN; M. Kato, K. Sakuma, M. Hachlya, Teikyo Univ of Science & Tech, Yamanashi, JAPAN.

9:45 AM I3.5
STRUCTURAL CHARACTERIZATION OF P++ BORON LAYERS IN BULK MICROMACHINED SILICON, Kenneth C. Wu, Eugene A. Fitzgerald, MIT, Dept of MS&E, Cambridge , MA; Jeffrey T. Borenstein, Charles Stark Draper Laboratory, Cambridge, MA.

10:00 AM BREAK

10:30 AM I3.6
SILICON MICROHOTPLATE ARRAYS AS A PLATFORM FOR EFFICIENT GAS-SENSING THIN FILM RESEARCH, Frank DiMeo, NIST, Process Measurements Div, Gaithersburg, MD; Steve Semancik, NIST, Chemical Science & Tech Lab, Gaithersburg, MD; Richard E. Cavicchi, NIST, Process Measurements Div, Gaithersburg, MD; John S. Suehle, Nim H. Tea, NIST, Semiconductor Electronic Div, Gaithersburg, MD.

10:45 AM I3.7
MECHANICAL BEHAVIOR OF A MEMS ACOUSTIC EMISSION SENSOR, David F. Bahr, Univ of Minnesota, Dept of CE&MS, Minneapolis, MN; William W. Gerberich, Univ of Minnesota, Dept of Chemical Engr, Minneapolis, MN; John S. Wright, Lorraine F. Francis, Univ of Minnesota, Dept of Chem Engr & Matls Science, Minneapolis, MN; N. R. Moody, Sandia National Laboratories, Livermore, CA.

11:00 AM I3.8
CHARACTERIZATION OF THE PIEZOELECTRIC RESPONSE OF ALUMINUM NITRIDE GROWN BY DC MAGNETRON SPUTTERING FOR APPLICATIONS IN THIN-FILM RESONATORS, Rajan Sharad Naik, MIT, Dept of MS&E, Cambridge, MA; Charles G. Sodini, MIT, Dept of EE&CS, Cambridge, MA; Joseph J. Lutsky, MIT, Dept of EE&CS Microsystems Tech Lab, Cambridge, MA; Rafael Reif, MIT, Dept of Electrical Engr & Computer Science, Cambridge, MA.

11:15 AM I3.9
THE EFFECT OF INORGANIC THIN FILM MATERIAL PROCESSING AND PROPERTIES ON STRESS IN SILICON PIEZORESISTIVE PRESSURE SENSORS , Gordon Bitko, David J. Monk, Andrew McNeil, Motorola Semiconductor Products Sector, Sensor Products Div, Phoenix, AZ.

11:30 AM I3.10
STRESS PROFILE ENGINEERING IN LPCVD POLYSILICON LAYERS FOR MICROMECHANICS, M. S. Benrakkad, Univ de Barcelona, EME Dept Fisica Aplicade, Barcelona, SPAIN; J. Samitier, Univ de Barcelona, EME Dept Fisica Aplicada, Barcelona, SPAIN; Juan Ramon Morante, Univ de Barcelona, Dept de Fisica Aplicada i Electronica, Barcelona, SPAIN; M. A. Benitez, Univ Autonoma Barcelona, Ctr Nacional de Microelectronics, Bellaterra, SPAIN; J. Esteve, Univ Autonoma Barcelona, Ctr Nacional de Microelectronica, Bellaterra, SPAIN.

11:45 AM I3.11
MICROMECHANICAL PROPERTIES OF THE ATMOSPHERIC AND REDUCED CHEMICAL VAPOUR DEPOSITED THICK POLYSILICON LAYERS, M. S. Benrakkad, Univ de Barcelona, EME Dept Fisica Aplicade, Barcelona, SPAIN; A. Vila, A. Cornet, Univ de Barcelona, Fisica Aplicada Electronica, Barcelona, GERMANY; Juan Ramon Morante, Univ de Barcelona, Dept de Fisica Aplicada i Electronica, Barcelona, SPAIN; P. Lange, Fraunhofer-Inst, Siliziumtechnologie, Berlin, GERMANY.

SESSION I4/Y10: ACTUATOR MATERIALS
Chairs: Miko Elwenspoek and Carl Freidhoff
Thursday Afternoon, December 5, 1996
Commonwealth (S)
1:30 PM *I4.1/Y10.1
SHAPE MEMORY AND SUPERELASTIC BEHAVIOR DEVELOPED IN SPUTTER-DEPOSITED Ti-Ni FILMS, Shuichi Miyazaki, Univ of Tsukuba, Inst of Materials Science, Ibaraki, JAPAN; Akira Ishida, National Inst for Metals, Ibaraki, JAPAN; Kuniaki Nomura, Univ of Tsukuba, Inst of Materials Science, Tsukuba, JAPAN.

2:00 PM I4.2/Y10.2
TITANIUM-NICKEL SHAPE MEMORY THIN FILM ACTUATORS FOR MICROMACHINED VALVES, William Benard, Case Western Reserve Univ, Dept of Electrical Engr & Applied Physics, Cleveland, OH; Harold Kahn, Case Western Reserve Univ, Dept of MS&E, Cleveland, OH; Michael A. Huff, Case Western Reserve Univ, Dept of Electrical Engr & Applied Physics, Cleveland, OH; Arthur H. Heuer, Case Western Reserve Univ, Dept of MS&E, Cleveland, OH.

2:15 PM I4.3/Y10.3
TWO-WAY SHAPE MEMORY EFFECT OF SPUTTER-DEPOSITED THIN FILMS OF Ti-Ni, Akira Ishida, National Inst for Metals, Ibaraki, JAPAN; Morio Sato, Nat Research Inst for Metals, Ibaraki, JAPAN; Shuichi Miyazaki, Univ of Tsukuba, Inst of Materials Science, Ibaraki, JAPAN.

2:30 PM I4.4/Y10.4
SHAPE MEMORY BEHAVIOR WITH A NARROW TEMPERATURE HYSTERESIS DEVELOPED IN SPUTTER-DEPOSITED Ti-Ni-Cu FILMS, Shuichi Miyazaki, Univ of Tsukuba, Inst of Materials Science, Ibaraki, JAPAN; Akira Ishida, National Inst for Metals, Ibaraki, JAPAN; Takanori Hashinaga, Univ of Tsukuba, Inst of Materials Science, Ibaraki, JAPAN.

2:45 PM BREAK

3:15 PM *I4.5/Y10.5
MAGNETO-MECHANICAL PROPERTIES OF TERFENOL-D FILMS, Manfred Wuttig, Univ of Maryland, Dept of Materials & Nuclear Engr, College Park, MD; Quanmin Su, Yiting Wen, Univ of Maryland, Dept of Mat & Nuc Engr, College Park, MD.

3:45 PM I4.6/Y10.6
GIANT MAGNETOSTRICTIVE MULTILAYER THIN FILM TRANSDUCERS, Eckhard Quandt, Forschungszentrum Karlsruhe, Inst Materialforschung 1, Karlsruhe, GERMANY; Alfred Ludwig, Forschungszentrum Julich, Inst fur Materialforschung, Karlsruhe, GERMANY.

4:00 PM I4.7/Y10.7
GIANT MAGNETOSTRICTIVE, SPRING MAGNET TYPE MULTILAYERS AND TORSION BASED MICROACTUATORS, Jochen Betz, Kenneth Mackay, Dominique Givord, CNRS, Laboratoire Louis Neel, Grenoble, FRANCE; Bernhard Halstrup, Univ de Kassel-Gh, Dept of Physics, Kassel, GERMANY.

4:15 PM *I4.8/Y10.8
PIEZOELECTRIC FORCE SENSING PZT MICROCANTILEVER ARRAY FOR MULTIPROBE SFM4340, Toshihiro Itoh, Research Ctr for Advanced Sci & Tech, Tokyo, JAPAN; Chengkuo Lee, Mechanical Engineering Lab, Dept of Mfg Systems, Ibaraki, JAPAN; Tadatomo Suga, Univ of Tokyo, RCAST, Tokyo, JAPAN.

4:45 PM I4.9/Y10.9
DEVELOPMENT OF MICROMIRROR FOR OPTICAL SCANNER USING PIEZOELECTRIC EXCITED AND ACTUATED STRUCTURES, Ryutaro Maeda, Chengkuo Lee, Mechanical Engineering Lab, Dept of Mfg Systems, Ibaraki, JAPAN; A. Schroth, Mechanical Engineering Lab, AIST MITI, Ibaraki, JAPAN; R. R.A. Syms, Imperial College, Dept of Electrical & Electronic Engr, London, UNITED KINGDOM.