Meetings & Events

fall 1996 logo1996 MRS Fall Meeting & Exhibit

December 2 - 6, 1996 | Boston
Meeting Chairs:
 Werner Lutze, Karen Maex, Karl Sieradzki




Symposium N—III-V Nitrides

Chairs

Theodore Moustakas -- Boston Univ
I. Akasaki -- Meijo Univ
B. Monemar -- Linkoping Univ
F. Ponce -- Xerox Palo Alto Research Center

Symposium Support

  • Army Research Office
  • JEOL USA, Inc.
  • Morton Advanced Materials
  • Office of Naval Research
  • Renishaw
  • Xerox Palo Alto Research Center

* Invited paper

SESSION N1: NITRIDE LASERS
Chairs: I. Akasaki and Theodore D. Moustakas
Monday Morning, December 2, 1996
America South (W)
8:30 AM *N1.1
CHARACTERISTICS OF InGaN MULTI QUANTUM WELL STRUCTURE LASER DIODES, S. Nakamura, Nichia Chemical Industries Ltd, Dept of Research & Development, Tokushima, JAPAN.

9:00 AM *N1.2
STRUCTURAL AND OPTICAL PROPERTIES OF NITRIDE-BASED LASER DIODE, Hiroshi Amano, S. Sota, T. Takeuchi, H. Sakai, I. Akasaki, Meijo Univ, Dept of Electrical & Electronic Engr, Nagoya, JAPAN.

9:30 AM N1.3
REALIZATION AND CHARACTERIZATION OF OPTICALLY PUMPED GalnN-DFB LASERS, Renate Hofmann, Univ Stuttgart, Stuttgart, GERMANY; Hans-Peter Gauggel, Uwe A. Griesinger, Frank Adler, Peter Ernst, Univ Stuttgart, 4 Physikal Inst, Stuttgart, GERMANY; Helmut Bolay, Volker Haerle, Univ Stuttgart, 4 Physikal Inst, Stuttgart, GERMANY; Ferdinand Scholz, Heinz Schweizer, Univ Stuttgart, 4 Physikal Inst, Stuttgart, GERMANY.

9:45 AM N1.4
STIMULATED EMISSION FROM SINGLE- AND MULTIPLE-QUANTUM-WELL GaN-AlGaN SEPARATE-CONFINEMENT HETEROSTRUCTURES, David A.S. Loeber, Neal G. Anderson, Univ of Massachusetts, Dept of ECE, Amherst, MA; Joan M. Redwing, Michael A. Tischler, Advanced Technology Materials Inc, Dept of Epitronics, Danbury, CT; Jeffrey S. Flynn, Advanced Technology Materials Inc, Epitronics, Danbury, CT.

10:00 AM BREAK

10:30 AM *N1.5
PHYSICS OF OPTICAL GAIN AND STIMULATED EMISSION, Arto Nurmikko, Brown Univ, Providence, RI.

11:00 AM N1.6
FABRICATION AND CHARACTERIZATION OF VERTICAL-CAVITY InGaN-AlGaN LIGHT EMITTING DIODES, Qishen Chen, Jinwei Yang, C. J. Sun, M. Z. Anwar, M. Asif Khan, APA Optics Inc, Blaine, MN; H. Temkin, Colorado State Univ, Dept of Electrical Engr, Fort Collins, CO; A. Oshinsky, Colorado State Univ, Fort Collins, CO; J. F. Schetzina, North Carolina State Univ, Dept of Physics, Raleigh, NC.

11:15 AM N1.7
RECOMBINATION OF LOCALIZED EXCITONS IN InGaN SINGLE-AND MULTI-QUANTUM WELL STRUCTURES, Shigefusa Chichibu, Science Univ of Tokyo, Dept of Electrical Engr, Noda Chiba, JAPAN; S. Nakamura, Nichia Chemical Industries Ltd, Dept of Research & Development, Tokushima, JAPAN; Takayuki Sota, Takashi Azuhata, Waseda Univ, Dept of ECE, Tokyo, JAPAN.

11:30 AM N1.8
GAIN SPECTRA AND STIMULATED EMISSION IN EPITAXIAL (In,Al) GaN THIN FILMS, D. Wiesmann, Igal Brener, L. N. Pfeiffer, Bell Labs, Lucent Technologies, Murray Hill, NJ; M. Asif Khan, C. J. Sun, APA Optics Inc, Blaine, MN; C. S. Chang, W. Fang, S. L. Chuang, Univ of Illinois-Urbana, Dept of Electrical & Computer Engr, Urbana, IL.

11:45 AM N1.9
EMISSION MECHANISM OF THE InGaN MQW GROWN BY MOCVD, Yukio Narukawa, Kyoto University, Dept of ES&E, Kyoto, JAPAN; S. Nakamura, Nichia Chemical Industries Ltd, Dept of Research & Development, Tokushima, JAPAN; Yoichi Kawakami, Shizuo Fujita, Shigeo Fujita, Kyoto University, Dept of Electronic Science & Engr, Kyoto, JAPAN.

SESSION N2: MOCVD GROWTH AND DEVICES
Chairs: Hiroshi Amano and R. F. Davis
Monday Afternoon, December 2, 1996
America South (W)
1:30 PM *N2.1
DESIGN CONSIDERATION OF GaN-BASED SURFACE EMITTING LASERS, Tohru Honda, Kenichi Iga, Fumio Koyama, Tokyo Inst of Technology, Precision & Intelligence Lab, Yokohama, JAPAN.

2:00 PM *N2.2
CHARACTERIZATION OF OMVPE-GROWN AlGaInN HETEROSTRUCTURES, D. P. Bour, Xerox Palo Alto Research Center, Electronics Materials Lab, Palo Alto, CA; H. F. Chung, W. Gotz, Xerox Palo Alto Research Center, Electronic Materials Lab, Palo Alto, CA; Linda T. Romano, Xerox Palo Alto Research Center, Electronics Materials Lab, Palo Alto, CA; B. S. Krusor, F. A. Ponce, N. M. Johnson, R. D. Bringans, Xerox Palo Alto Research Center, Electronic Materials Lab, Palo Alto, CA.

2:30 PM N2.3
VERY LOW DISLOCATION DENSITIES IN GaN-AlGaN HETEROSTRUCTURES, Patrick Kung, Manijeh Razeghi, Adam Saxler, Danielle Walker, Xiaolong Zhang, Northwestern Univ, Dept of Electrical & Computer Engr, Evanston, IL; Vinayak P. Dravid, Weida Qian, Northwestern Univ, Dept of MS&E, Evanston, IL.

2:45 PM N2.4
LARGE-AREA GROWTH OF InGaN/AlGaN USING IN-SITU MONITORING, Egbert Woelk, Ditmar Schmitz, Gert Strauch, Bernd Wachtendorf, Holger Jurgensen, Aixtron GmbH, Aachen, GERMANY.

3:00 PM BREAK

3:30 PM *N2.5
METALORGANIC VAPOR PHASE EPITAXIAL GROWTH OF GaInN/GaN HETERO STRUCTURES AND QUANTUM WELLS., Ferdinand Scholz, Univ Stuttgart, 4 Physikal Inst, Stuttgart, GERMANY; Volker Haerle, Frank Steuber, Alexander Sohmer, Helmut Bolay, Achim Doernen, Viktor Syganow, Univ Stuttgart, 4 Physikal Inst, Stuttgart, GERMANY; Andreas Hangleiter, Univ Stuttgart, 4 Physikal Inst, Stuttgart, GERMANY; Jean-Yves Duboz, Pierre Galtier, Emmanuel E.R. Rosencher, Thomson CSF, Physics Lab, Orsay, FRANCE.

4:00 PM N2.6
A MODEL FOR In INCORPORATION IN THE GROWTH OF InGaN FILMS, E. L. Piner, North Carolina State Univ, Dept of Materials, Raleigh, NC; F. G. McIntosh, J. C. Roberts, North Carolina State Univ, Dept of Electrical & Computer Engr, Raleigh, NC; Karim S. Boutros, Philips Research Laboratories, Briarcliff Manor, NY; M. A. Aumer, V. A. Joshkin, North Carolina State Univ, Dept of Electrical & Computer Engr, Raleigh, NC; N. A. El-Masry, North Carolina State Univ, Dept of MAT, Raleigh, NC; S. M. Bedair, S. Liu, North Carolina State Univ, Dept of Electrical & Computer Engr, Raleigh, NC.

4:15 PM N2.7
THE COMPOSITION PULLING EFFECT IN InGaN GROWTH ON THE GaN AND AlGaN EPITAXIAL LAYERS GROWN BY MOVPE, Masaya Shimizu, Yasutoshi Kawaguchi, Kazumasa Hiramatsu, Nobuhiko Sawaki, Nagoya Univ, Dept of Electronics, Nagoya, JAPAN.

4:30 PM N2.8
MODELLING ANALYSIS OF MOVPE OF III-GROUP NITRIDES IN NITROGEN ATMOSPHERE, Yuri N. Makarov, Univ Erlangen-Nurnberg, Fluid Mechanics Dept, Erlangen, Germany; Ditmar Schmitz, Bernd Wachtendorf, Holger Jurgensen, Aixtron GmbH, Aachen, GERMANY.

4:45 PM N2.9
TEMPERATURE-MEDIATED PHASE SELECTION DURING GROWTH OF GaN ON tex2html_wrap_inline937 AND tex2html_wrap_inline939 GaAs SUBSTRATES, Subhash Mahajan, M. De Graef, Carnegie Mellon Univ, Dept of Materials Science, Pittsburgh, PA; Thomas George, Robert W. Beye, Jet Propulsion Laboratory, Ctr for Space Microelectronics Tech, Pasadena, CA; Jinwei Yang, M. Asif Khan, APA Optics Inc, Blaine, MN.

SESSION N3: POSTER SESSION: CRYSTAL GROWTH OF III-V NITRIDES
Monday Evening, December 2, 1996
8:00 P.M.
America Ballroom (W)
N3.1
CONVERSION OF GaAs LAYERS DEPOSITED ON (111) SILICON AND SIMOX SUBSTRATES INTO GaN AND SUBSEQUENT GROWTH OF GaN LAYERS, Chimin Hu, Subhash Mahajan, Carnegie Mellon Univ, Dept of Materials Science, Pittsburgh, PA; Jinwei Yang, C. J. Sun, M. Asif Khan, APA Optics Inc, Blaine, MN; H. Temkin, Colorado State Univ, Dept of Electrical Engr, Fort Collins, CO.

N3.2
NITROGEN PLASMA PRETREATMENT OF SAPPHIRE SUBSTRATES FOR THE GaN BUFFER GROWTH BY REMOTE PLASMA ENCHANCED MOCVD, Min Hong Kim, Cheolsoo Sone, Seoul National Univ, School of MS&E, Seoul, SOUTH KOREA; Jae Hyung Yi, Seoul National Univ, School of MS&E, Seoul, SOUTH KOREA; Soun Ok Heur, Inter-university Semiconductor Research Ctr, Seoul, SOUTH KOREA; Euijoon Yoon, Seoul National Univ, School of MS&E, Seoul, KOREA.

N3.3
STRAIN AND INTERFACE STRUCTURE OF THIN AlN/GaN FILM ON SAPPHIRE (0001), Chinkyo Kim, Univ of Illinois-Urbana, Dept of Physics, Urbana, IL; I. K. Robinson, Jaemin Myoung, Kyu-Hwan Shim, Univ of Illinois-Urbana, Dept of MS&E, Urbana, IL; Oleg Gluschenkov, Kyekyoon Kim, Univ of Illinois-Urbana, Dept of Electrical & Computer Engr, Urbana, IL.

N3.4
THE EFFECTS OF CARRIER GAS ON MOCVD GROWTH AND NUCLEATION OF (In)GaN ON SAPPHIRE, Jung Han, Mark V. Weckwerth, Robert M. Biefeld, Mary H. Crawford, John C. Zolper, Sandia National Laboratories, Albuquerque, NM.

N3.5
DEPOSITION AND CHARACTERIZATION OF DEVICE QUALITY IN InGaN-AlGaN LAYERS OVER (111) SILICON AND SIMOX SUBSTRATES, Jinwei Yang, C. J. Sun, Qishen Chen, M. Z. Anwar, M. Asif Khan, APA Optics Inc, Blaine, MN; Subhash Mahajan, Chimin Hu, Carnegie Mellon Univ, Dept of Materials Science, Pittsburgh, PA; H. Temkin, Colorado State Univ, Dept of Electrical Engr, Fort Collins, CO; A. Oshinsky, Colorado State Univ, Fort Collins, CO.

N3.6
MOCVD-GROWTH OF GaN, AlGaN AND InGaN FOR DEVICE APPLICATION, Bernd Wachtendorf, Egbert Woelk, Ditmar Schmitz, Holger Jurgensen, Aixtron GmbH, Aachen, GERMANY; H. Obloh, K. H. Bachem, Fraunhofer-Inst, Inst Angewandte Festkorperphysik, Freiburg, GERMANY.

N3.7
GROWTH AND CHARACTERIZATION OF INSULATING AND CONDUCTING FILMS OF AlN/AlN:C GROWN ON SAPPHIRE AND 6H-SiC SUBSTRATES, Kobchat Wongchotigul, Howard Univ, School of Engineering, Washington DC, ; Xiao Tang, Michael G. Spencer, Howard Univ, Dept of Electrical Engr, Washington, DC; Y. X. Li, Univ of Maryland, Dept of Materials & Nuclear Engr, College Park, MD; Lourdes Salamanca-Riba, Univ of Maryland, Dept of Matls & Nuclear Engr, College Park, MD; Vitaly Talyansky, R. P. Sharma, Venky T. Venkatesan, Univ of Maryland, Dept of Physics, College Park, MD; Ken Jones, R. Laureu, U.S. Army Research Laboratory, Fort Monmouth, NJ.

N3.8
LOW-TEMPERATURE METAL-ORGANIC CHEMICAL VAPOR DEPOSITION OF GALLIUM NITRIDE ON (0001) SAPPHIRE SUBSTRATES USING A REMOTE RF NITROGEN PLASMA, Cheolsoo Sone, Min Hong Kim, Seoul National Univ, School of MS&E, Seoul, SOUTH KOREA; Jae Hyung Yi, Seoul National Univ, School of MS&E, Seoul, SOUTH KOREA; Euijoon Yoon, Seoul National Univ, School of MS&E, Seoul, KOREA; Soun Ok Heur, Inter-university Semiconductor Research Ctr, Seoul, SOUTH KOREA.

N3.9
ADDUCT FORMATION AND REACTIONS IN III-V NITRIDE GROWTH CHEMISTRY, Harsono S. Simka, MIT, Dept of Chemical Engr, Cambridge, MA; Thomas F. Kuech, Syed A. Safvi, Assaf Thon, Univ of Wisconsin-Madison, Dept of Chemical Engr, Madison, WI; Klavs F. Jensen, MIT, Dept of Chemical Engr, Cambridge, MA.

N3.10
CHEMISTRY OF AlGaInN OMCVD GROWTH, Harsono S. Simka, Klavs F. Jensen, Theodoros G. Mihopoulos, MIT, Dept of Chemical Engr, Cambridge, MA.

N3.11
HYDROGEN AND AMMONIA REACTIONS ON SINGLE CRYSTALLINE GaN FILM, Ratna Shekhar, Brian G. Willis, Klavs F. Jensen, MIT, Dept of Chemical Engr, Cambridge, MA.

N3.12
MECHANISMS OF STRAIN REDUCTION IN GaN AND AlGaN/GaN EPITAXIAL LAYERS, Oliver Gfroeorer, Tim Schlueusener, Volker Haerle, Ferdinand Scholz, Andreas Hangleiter, Univ Stuttgart, 4 Physikal Inst, Stuttgart, GERMANY.

N3.13
MOVPE GaN GAS PHASE CHEMISTRY FOR REACTOR DESIGN AND OPTIMIZATION , S. A. Safvi, Thomas F. Kuech, Assaf Thon, Univ of Wisconsin-Madison, Dept of Chemical Engr, Madison, WI; Joan M. Redwing, Advanced Technology Materials Inc, Dept of Epitronics, Danbury, CT; Jeffrey S. Flynn, Advanced Technology Materials Inc, Epitronics, Danbury, CT; Michael A. Tischler, Advanced Technology Materials Inc, Dept of Epitronics, Phoenix, AZ.

N3.14
SELECTIVE GROWTH OF GaN and tex2html_wrap_inline941 ON GaN/AlN/6H-SiC(0001) MULTILAYER SUBSTRATES VIA ORGANOMETALLIC VAPOR PHASE EPITAXY, Ok-Hyun Nam, Michael D. Bremser, R. F. Davis, North Carolina State Univ, Dept of MS&E, Raleigh, NC.

N3.15
LARGE AREA GROWTH OF AlN, GaN AND SiC ON SILICON, Lincoln J. Lauhon, Cornell Univ, Dept of Physics, Ithaca, NY; Scott A. Ustin, Cornell Univ, Dept of Applied & Engr Physics, Ithaca, NY; Wilson Ho, Cornell Univ, Dept of Physics, Ithaca, NY.

N3.16
HETEROEPITAXIAL GROWTH ON COMPLIANT SUBSTRATES: MORPHOLOGY OF GaN GROWN ON Sc LAYERS, Daniel D. Koleske, Alma E. Wickenden, Naval Research Laboratory, Electronic Science & Tech Div, Washington, DC; Jaime A. Freitas, Ray Kaplan, Sachs & Freeman Associates Inc, Landover, MD; Sharka M. Prokes, Naval Research Laboratory, Electronic Science & Tech Div, Washington, DC.

N3.17
STUDY OF NITRIDATION AND NUCLEATION IN MOCVD GROWTH OF GaN ON SAPPHIRE, S. Richard Chung, Rong Zhang, Univ of Maryland, Dept of Electrical Engr, Baltimore, MD.

N3.18
SELECTED ENERGY EPITAXY OF GALLIUM NITRIDE, Ravi Kiran Chilukuri, H. Henry Lamb, Eric Chen, North Carolina State Univ, Dept of Chemical Engr, Raleigh, NC; Suian Zhang, R. F. Davis, North Carolina State Univ, Dept of MS&E, Raleigh, NC.

N3.19
EFFECT OF SAPPHIRE NITRIDATION ON DEFECT DENSITY IN GaN FILM BY MOCVD, Dongjin Byun, KIST, Metals Div, Seoul, SOUTH KOREA; Gyeungho Kim, Korea Adv Inst of Science & Technology, Ceramics Div, Seoul, KOREA; Jaesik Jeong, Byongho Kim, Korea Univ, Dept of MS&E, Seoul, KOREA; Dalkeun Park, KIST, Chemical Engr Div, Seoul, SOUTH KOREA; Dong-Wha Kum, Korea Adv Inst of Science & Technology, Metals Div, Seoul, KOREA.

N3.20
COMPARISONS OF GaN ON SAPPHIRE WITH AND WITHOUT NITRIDATION, Dongjin Byun, KIST, Metals Div, Seoul, SOUTH KOREA; Gyeungho Kim, Korea Adv Inst of Science & Technology, Ceramics Div, Seoul, KOREA; Jaesik Jeong, Korea Univ, Dept of MS&E, Seoul, KOREA; Jae-Inn Lee, Sung Kyun Kwan Univ, Dept of Matls Engr, Suwon, KOREA; Byongho Kim, Korea Univ, Dept of MS&E, Seoul, KOREA; Ji-Beom Yoo, Sung Kyun Kwan Univ, Dept of Matls Engr, Suwon, SOUTH KOREA; Dong-Wha Kum, KIST, Metals Div, Seoul, SOUTH KOREA.

N3.21
HOMOEPITAXY OF GaN BY MOCVD AND HVPE, Dongjin Byun, KIST, Metals Div, Seoul, SOUTH KOREA; Gyeungho Kim, Korea Adv Inst of Science & Technology, Ceramics Div, Seoul, KOREA; Jeongwook Lee, Sung Kyun Kwan Univ, Dept of Materials Engr, Suwon, SOUTH KOREA; Ji-Beom Yoo, Sung Kyun Kwan Univ, Dept of Matls Engr, Suwon, SOUTH KOREA; Dalkeun Park, KIST, Chemical Engr Div, Seoul, SOUTH KOREA; Dong-Wha Kum, KIST, Metals Div, Seoul, SOUTH KOREA.

N3.22
ROLE OF SUBSTRATE SURFACE TERMINATION AND SYMMETRY IN THE GROWTH OF GaN EPITAXIAL FILMS , Robert W. Beye, Jet Propulsion Laboratory, Ctr for Space Microelectronics Tech, Pasadena, CA; M. Asif Khan, J. W. Yang, APA Optics Inc, Blaine, MN; Thomas George, Jet Propulsion Laboratory, Ctr for Space Microelectronics Tech, Pasadena, CA; Subhash Mahajan, Carnegie Mellon Univ, Dept of Materials Science, Pittsburgh, PA.

N3.23
MICROSTRUCTURES OF AlN BUFFER LAYERS FOR THE GROWTH OF GaN on (0001) Al tex2html_wrap_inline943 , Mark Yeadon, Univ of Illinois-Urbana, Dept of Physics, Urbana, IL; W. Kim, A. Botchkarev, Univ of Illinois-Urbana, Coordinated Science Lab, Urbana, IL; S. N. Mohammad, Univ of Illinois-Urbana, Dept of MS&E, Urbana, IL; H. Morkoc, Univ of Illinois-Urbana, Coordinated Science Lab, Urbana, IL; J Murray Gibson, Univ of Illinois-Urbana, Dept of Physics & Matls Science, Urbana, IL.

N3.24
PROPERTIES OF InGaN DEPOSITED ON GLASS , Samuel Strite, IBM Zurich, Research Div, Ruschlikon, SWITZERLAND; David C. Look, Wright State Univ, Dept of Physics, Dayton, OH; A. Dommann, Neu-Technikum Buchs, Bachs, SWITZERLAND.

N3.25
MATERIAL AND DEVICE CHARACTERISTICS OF GaN GROWN BY RF PLASMA-SOURCE MBE, Kevin S. Stevens, Rod Beresford, Brown Univ, Engineering Div, Providence, RI; Hwa Cheng, EPI MBE Products Group, St Paul, MN.

N3.26
STRUCTURAL CHARACTERIZATION OF Mg-DOPED GaN GROWN BY REACTIVE MBE, David J. Smith, Arizona State Univ, Dept of Physics & Astronomy, Tempe, AZ; Shu-Chen Y. Tsen, Arizona State Univ, Ctr for Solid State Science, Tempe, AZ; A. Botchkarev, W. Kim, H. Morkoc, A. Salvador, Univ of Illinois-Urbana, Coordinated Science Lab, Urbana, IL.

N3.27
GROWTH OF AlBN SOLID SOLUTIONS BY OMVPE, M. Shin, Carnegie Mellon Univ, Dept of MS&E, Pittsburgh, PA; A. Y. Polyakov, Carnegie Mellon Univ, MS&E, Pittsburgh, PA; Weida Qian, Marek Skowronski, Carnegie Mellon Univ, Dept of MS&E, Pittsburgh, PA; D. W. Greve, Carnegie Mellon Univ, Dept of Electrical & Computer Engr, Pittsburgh, PA; R. G. Wilson, Hughes Research Laboratories, Malibu, CA.

N3.28
EFFECTS OF NITROGEN PLASMA ON EPITAXIAL GaN GROWN BY PLASMA-ASSISTED MOLECULAR BEAM EPITAXY, Kyu-Hwan Shim, Jaemin Myoung, Univ of Illinois-Urbana, Dept of MS&E, Urbana, IL; Chinkyo Kim, Univ of Illinois-Urbana, Dept of Physics, Urbana, IL; Oleg Gluschenkov, Kyekyoon Kim, Sangsig Kim, S. G. Bishop, Univ of Illinois-Urbana, Dept of Electrical & Computer Engr, Urbana, IL.

N3.29
ANISOTROPY OF DEFECT DISTRIBUTION IN CUBIC GaN GROWN ON GaAs BY PLASMA-ASSISTED MBE, Sergei Ruvimov, Zuzanna Liliental-Weber, Jack Washburn, Lawrence Berkeley National Laboratory, Berkeley, CA; Timothy J. Drummond, Michael J. Hafich, Stephen R. Lee, Sandia National Laboratories, Albuquerque, NM.

N3.30
GROWTH AND CHARACTERIZATION OF ZNS/GAN HETEROSTRUCTURES BY MBE

, Eric C. Piquette, T. C. McGill, Zvonimir Z. Bandic, J. O. McCaldin, California Inst of Technology, Dept of Applied Physics, Pasadena, CA.

N3.31
STRUCTURAL AND OPTICAL CHARACTERIZATION OF HIGH-QUALITY CUBIC GaN EPILAYERS GROWN ON GaAs AND 3C-SiC SUBSTRATES BY GAS SOURCE MBE USING RHEED IN-SITU MONITORING, Hajime Okumura, Electrotechnical Laboratory, Quatum Material Section, Ibaraki, JAPAN; Krishnan Balakrishnan, Electrotechnical Laboratory, Materials Science Div, Tsukuba Ibaraki, JAPAN; Guy Feuillet, Electrotechnical Laboratory, Quantum Materials Section, Tsukuba Ibaraki, JAPAN; Yuuki Ishida, Electrotechnical Laboratory, Materials Science Div, Tsukuba Ibaraki, JAPAN; Sadafumi Yoshida, Electrotechnical Laboratory, Dept of Quantum Materials, Ibaraki, JAPAN; Kasuo Ohta, Electrotechnical Laboratory, Quantum Material Section, Ibaraki, JAPAN; Hiroshi Hamaguchi, Shigefusa Chichibu, Science Univ of Tokyo, Dept of Electrical Engr, Noda Chiba, JAPAN.

N3.32
IN-SITU REFLECTIVE HIGH ENERGY ELECTRON DIFFRACTION (RHEED) STUDY OF STRAIN AND SURFACE MORPHOLOGY EVOLUTION OFAlN THIN FILMS DURING GROWTH, Ratna Naik, Wayne State Univ, Dept of Physics & Astronomy, Detroit, MI.

N3.33
THE EFFECT OF ATOMIC HYDROGEN ON THE GROWTH OF GALLIUM NITRIDE BY MOLECULAR BEAM EPITAXY, Thomas H. Myers, S. L. Buczkowski, West Virginia Univ, Dept of Physics, Morgantown, WV; Zhonghai Yu, North Carolina State Univ, Dept of Physics, Raleigh, NC; M. Richards-Babb, West Virginia Univ, Dept of Chemistry, Morgantown, WV; Linda T. Romano, Xerox Palo Alto Research Center, Electronics Materials Lab, Palo Alto, CA.

N3.34
GROWTH OF tex2html_wrap_inline945 N AND tex2html_wrap_inline947 BY METALORGANIC MOLECULAR BEAM EPITAXY FOR DEVICE APPLICATIONS, John Devin MacKenzie, Cammy R. Abernathy, Sean M. Donovan, Steve J. Pearton, Univ of Florida, Dept of MS&E, Gainesville, FL; Fan Ren, Bell Labs, Lucent Technologies, Murray Hill, NJ.

N3.35
EFFECT OF THE NITRIDATION OF THE SAPPHIRE (0001) SUBSTRATE ON THE GaN GROWTH, N. Grandjean, CNRS, CHREA, Valbonne, FRANCE; J. Massies, P. Vennegues, M. Laugt, M. Leroux, CNRS, CRHEA, Valbonne, FRANCE.

N3.36
GROWTH AND CHARACTERIZATION OF AlN ON 6H SiC SUBSTRATES, Margarita Petrova Lekova, Wayne State Univ, Dept of Electrical & Computer Engr, Detroit, MI; Gregory W. Auner, Wayne State Univ, Dept of ECE, Detroit, MI; Vaman Naik, Univ of Michigan, Dept of Natural Sciences, Dearborn, MI.

N3.37
EPITAXIAL GROWTH OF ScN ON (0001) 6H-SiC, Sean W. King, Kieran M. Tracy, North Carolina State Univ, Dept of MS&E, Raleigh, NC; Robert J. Nemanich, North Carolina State Univ, Dept of Physics, Raleigh, NC; R. F. Davis, North Carolina State Univ, Dept of MS&E, Raleigh, NC.

N3.38
2-FOLD AND 3-FOLD SURFACE RECONSTRUCTIONS ON (0 0 0 1) GaN, E. S. Hellman, Bell Labs, Lucent Technologies, Murray Hill, NJ.

N3.39
Ga DESORPTION AND GROWTH BEHAVIOR OF GaN DURING MOLECULAR BEAM EPITAXY, Supratik Guha, Nestor A. Bojarczuk, David W. Kisker, IBM T.J. Watson Research Ctr, Yorktown Heights, NY.

N3.40
OPTIMIZATION OF InN GROWTH BY MOMBE FOR IMPROVED III-N CONTACT PERFORMANCE, Sean M. Donovan, John Devin MacKenzie, Cammy R. Abernathy, Cathy B. Vartuli, Steve J. Pearton, Univ of Florida, Dept of MS&E, Gainesville, FL; Fan Ren, Bell Labs, Lucent Technologies, Murray Hill, NJ; M. W. Cole, Ken Jones, U.S. Army Research Laboratory, Ft. Monmouth, NJ.

N3.41
A STUDY OF MIXED GROUP-V NITRIDES GROWN BY GAS-SOURCE MOLECULAR BEAM EPITAXY USING A N RADICAL BEAM SOURCE, W. G. Bi, C. W. Tu, Univ of California-San Diego, Dept of Electrical & Computer Engr, La Jolla, CA .

N3.42
KINETICS OF NITROGEN IN GaAsN LAYERS DURING GaAs OVERGROWTH, Z. Z. Bandic, T. C. McGill, California Inst of Technology, Dept of Applied Physics, Pasadena, CA; M. L. O'Steen, R. J. Hauenstein, Oklahoma State Univ, Dept of Physics, Stillwater, OK.

N3.43
MODELLING OF MOLECULAR BEAM EPITAXY OF BINARY AND TERNARY III-GROUP NITRIDES, Sergei Yu. Karpov, Advanced Technology Center, St. Petersburg, RUSSIA; Yuri N. Makarov, Univ Erlangen-Nurnberg, Fluid Mechanics Dept, Erlangen, Germany; Roman A. Talalaev, Mark S. Ramm, A.F. Ioffe Phys-Technical Inst, St. Petersburg, RUSSIA.

N3.45
PULSED LASER DEPOSITION OF HIGH QUALITY TiN ON SAPPHIRE (0001), Vitaly Talyansky, Univ of Maryland, Dept of Physics, College Park, MD; Y. X. Li, Univ of Maryland, Dept of Materials & Nuclear Engr, College Park, MD; Venky T. Venkatesan, R. P. Sharma, Univ of Maryland, Dept of Physics, College Park, MD; Lourdes Salamanca-Riba, Univ of Maryland, Dept of Matls & Nuclear Engr, College Park, MD.

N3.46
PULSED LASER DEPOSITION OF HIGH QUALITY AlN/TiN BILAYERS ON SAPPHIRE (0001), Vitaly Talyansky, Univ of Maryland, Dept of Physics, College Park, MD; Lourdes Salamanca-Riba, Univ of Maryland, Dept of Matls & Nuclear Engr, College Park, MD; R. P. Sharma, M. Downes, S. Chapoon, Univ of Maryland, Dept of Physics, College Park, MD; Michael G. Spencer, Xiao Tang, Howard Univ, Dept of Electrical Engr, Washington, DC; Y. X. Li, Univ of Maryland, Dept of Materials & Nuclear Engr, College Park, MD; Venky T. Venkatesan, Univ of Maryland, Dept of Physics, College Park, MD.

N3.47
PULSED LASER DEPOSITION OF ALUMINUM NITRIDE ON (0001) AND (000 tex2html_wrap_inline949 ) ORIENTED SINGLE CRYSTAL ZINC OXIDE, Michael J. Suscavage, USAF Rome Laboratory, EM Matls Tech Div, Hanscom AFB, MA; Daniel F. Ryder, Tufts Univ, Dept of Chemical Engr, Medford, MA.

N3.48
EFFECT OF GROWTH PARAMETERS AND LOCAL GAS PHASE CONCENTRATION ON THE UNIFORMITY AND MATERIAL PROPERTIES OF GaN/SAPPHIRE GROWN BY HVPE, S. A. Safvi, Thomas F. Kuech, M. Horton, N. Perkins, Univ of Wisconsin-Madison, Dept of Chemical Engr, Madison, WI; R Matyi, Univ of Wisconsin-Madison, Material Science Program, Madison, WI.

N3.49
MORPHOLOGY AND DIELECTRIC PROPERTIES OF REACTIVELY SPUTTERED ALUMINUM NITRIDE THIN FILMS, Alvin G. Randolph, Rochester Inst of Technology, Dept of MS&E, Rochester, NY; Santosh K. Kurinec, Rochester Inst of Technology, Dept of Microelectronics Engr, Rochester, NY.

N3.51
DEPOSITION OF NANOPHASE ALUMINUM NITRIDE THIN FILMS BY PULSED LASER DEPOSITION, H. C. Ong, Northwestern Univ, Matls Res Ctr, Evanston, IL; J. Y. Dai, Northwestern Univ, Dept of MS&E, Evanston, IL; R. P. H. Chang, Northwestern Univ, Materials Research Ctr, Evanston, IL.

N3.52
LOW-TEMPERATURE DEPOSITION AND CHARACTERIZATION OF AlInN, In, AlN AND MULTILAYERED THIN FILMS, J. Olufemi Olowalafe, Univ of Delaware, Newark, DE; Guohua Qiu, Univ of Delaware, Dept of Electrical Engr, Neward, DE; Joachim Piprek, Tao Peng, Univ of Delaware, Dept of Materials Science, Newark, DE.

N3.53
FABRICATION AND CHARACTERIZATION OF EPITAXIAL AlN FILMS ON Si(111) AND tex2html_wrap_inline951 (0001) WITH EPITAXIAL TiN BUFFER LAYER, R. D. Vispute, Katharine Dovidenko, K. Jagannadham, Jagdish Narayan, North Carolina State Univ, Dept of MS&E, Raleigh, NC; John D. Budai, Oak Ridge National Laboratory, Solid State Div, Oak Ridge, TN.

N3.54
LOW PRESSURE CVD OF GaN FROM tex2html_wrap_inline953 and tex2html_wrap_inline955 , M. Topf, S. Koynov, Bulgaria Academy of Sciences, CLSENES, Sofia, BULGARIA; Stefan Fischer, Justus-Leibig-Univ, I Physics Inst, Giessen, GERMANY; I. Dirnstorfer, W. Kriegseis, Justus-Leibig-Univ, I. Physics Inst, Giessen, GERMANY; Bruno K. Meyer, Technische Univ Munich, Dept of Physics, Garching, GERMANY.

N3.55
NEW SYNTHETIC PATHWAYS TO AlN AND HETEROEPITAXIAL GaN BY INORGANIC CHEMICAL VAPOR DEPOSITION, John Kouvetakis, Arizona State Univ, Dept of Chemistry & Biochem, Tempe, AZ; David J. Smith, Arizona State Univ, Dept of Physics & Astronomy, Tempe, AZ; Jeff McMurran, Arizona State Univ, Dept of Chemistry & Biochem, Tempe, AZ.

N3.56
THE INFLUENCE OF HYDROGEN ADDITION ON THE CHEMICAL PROPERTIES OF HYDROGENATED ALUMINUM NITRIDE FILMS PREPARED BY RF REACTIVE SPUTTERING, Jai-Young Lee, Yoon-Joong Yong, KAIST, Dept of MS&E, Taejon, SOUTH KOREA.

N3.57
GROWTH OF HEXAGONAL GALLIUM NITRIDE FILMS ON THE (111) SURRFACES OF SILICON WITH ZINC OXIDE BUFFER LAYERS, Yunsoo Kim, Chang Kim, Kyung-Won Lee, Korea Res Inst of Chem Tech, Inorganic Materials Div, Taejon, SOUTH KOREA; Joon T. Park, KAIST, Dept of Chemistry, Taejon, SOUTH KOREA.

N3.58
TOF-LEIS CHARACTERIZATION OF GaN THIN FILMS GROWN WITH ECR AND tex2html_wrap_inline955 , Esther Kim, Abdelhak Bensaoula, Univ of Houston, Space Vacuum Epitaxy Ctr, Houston, TX; W. Tafferner, Univ of Houston, SVEC, Houston, TX.

N3.59
REACTIVE MBE GROWTH OF GaN, AlGaN, AND AlN FILMS USING GaN/SiC SUBSTRATES, C. Boney, North Carolina State Univ, Dept of Physics, Raleigh, NC; W. C. Hughes, W. H. Roland, J. W. Cook, North Carolina State Univ, Raleigh, NC; J. F. Schetzina, North Carolina State Univ, Dept of Physics, Raleigh, NC; J. A. Edmond, Cree Research Inc, Durham, NC.

N3.60
THE GROWTH OF GALLIUM NITRIDE FILMS BY MIGRATION ENHANCED EPITAXY, S. E. Hooper, Sharp Laboratories of Europe, , Oxford, UNITED KINGDOM; C. T. Foxon, T. S. Cheng, L. C. Jenkins, Univ of Nottingham, Dept of Physics, Nottingham, UNITED KINGDOM; G. B. Ren, D. E. Lacklison, Univ of Nottingham, Dept of Electrical & Electronic Engr, Nottingham, UNITED KINGDOM; J. W. Orton, Univ of Nottingham, Dept of Electrical & Electronic Engineering, Nottingham, UNITED KINGDOM; G. Duggan, T. Bestwick, Sharp Microelectronics Tech, , Oxford, UNITED KINGDOM.

N3.61
THIN FILM GROWTH OF GROUP III NITRIDES BY MASS SEPARATED ION BEAM DEPOSITION, Hans C. Hofsass, Carsten Ronning, Horst Feldermann, Michael Sebastian, Univ Konstanz, Fakultat fur Physik, Konstanz, GERMANY.

N3.62
PRESSURE-ASSISTED MBE GROWTH OF GaN USING A HOLLOW-ANODE N-SOURCE, Michael S.H. Leung, Ralf Klockenbrink, Univ of California-Berkeley, Dept of Matls Science & Mineral Engr, Berkeley, CA; Hiroaki Fujii, Univ of California-Berkeley, Dept of Matls Science & Minerial Engr, Berkeley, CA; Joachim Krueger, Lawrence Berkeley National Laboratory, Materials Science Div, Berkeley, CA; G. S. Sudhir, Univ of California-Berkeley, Dept of Matls Science & Mineral Engr, Berkeley, CA; Andre Anders, Lawrence Berkeley National Laboratory, AFRD, Berkeley, CA; Christian Kisielowski, Lawrence Berkeley National Laboratory, Berkeley, CA; Eicke R. Weber, Univ of California-Berkeley, Dept of Matls Science & Mineral Engr , Berkeley, CA; Michael Rubin, Lawrence Livermore National Laboratory, Berkeley, CA.

N3.63
LOW-ENERGY REACTIVE SPUTTERING OF AlN ON SAPPHIRE, Alvin J. Drehman, USAF Rome Laboratory, Hanscom AFB, MA.

N3.64
GROWTH OF ZnO THIN FILMS ON SAPPHIRE, Alvin J. Drehman, USAF Rome Laboratory, Hanscom AFB, MA; Pearl Yip, USAF Rome Laboratory, RL/ERX, Hanscom AFB, MA.

N3.65
SYNTHESIS AND CHARACTERIZATION OF NANOSTRUCTURED GALLIUM NITRIDE/PMMA COMPOSITE, Kenneth E. Gonsalves, Greg Carlson, Univ of Connecticut, Dept of Polymer Science, Storrs, CT; Sri P. Rangarajan, Univ of Connecticut, Inst of Materials Science, Storrs, CT; Mohamed Benaissa, Miguel Jose Yacaman, UNAM, Inst de Fisica.

N3.66
GALLIUM NITRIDE THICK LAYERS: EPITAXIAL GROWTH AND SEPARATION FROM SUBSTRATES, Vassilij V. Bel'kov, Vassilij M. Botnaryuk, Ivan I. Diakonu, Leonid M. Fedorov, Vladimir V. Krivolapchuk, Yuri V. Zhilyaev, A.F. Ioffe Phys-Technical Inst, Dept of Solid State Electronics, St.Petersburg, RUSSIA.

N3.67
EVALUATION AND PREPARATION OF ;SPMlt;0001;SPMgt;-ORIENTED HAFNIUM SUBSTRATES FOR THE GROWTH OF GaN VIA PLASMA-ASSISTED MBE, Kevin S. Stevens, Rod Beresford, Clyde L. Briant, B. Rong, David C. Paine, Brown Univ, Engineering Div, Providence, RI; J. Haygarth, Teledyne-Wah Chang Laboratories, Albany, OR.

N3.68
BAND STRUCTURE AND CATION ORDERING IN LiGaO tex2html_wrap_inline961 , Sukit Limpijumnong, Walter R. L. Lambrecht, Benjamin Segall, Kwiseon Kim, Case Western Reserve Univ, Dept of Physics, Cleveland, OH.

N3.69
ZnO BUFFER FORMED ON Si AND SAPPHIRE SUBSTRATES FOR GaN MOVPE, Tomoe Shirasawa, Tohru Honda, Fumio Koyama, Kenichi Iga, Tokyo Inst of Technology, Precision & Intelligence Lab, Yokohama, JAPAN.

N3.70
FABRICATION OF GaAs/BaF tex2html_wrap_inline961 /GaAs COMPLAINT SUBSTRATES FOR GROWTH OF GaN LAYERS, Francisco Santiago, Naval Surface Warfare Center, Systems R&D, Silver Spring, MD; Michael F. Stumborg, Kevin A. Boulais, T. K. Chu, Naval Surface Warfare Center, Dahlgren Div, Silver Spring, MD; Chimin Hu, Subhash Mahajan, Carnegie Mellon Univ, Dept of Materials Science, Pittsburgh, PA.

N3.71
DEPOSITION OF AlN ON WS2 (0001) SUBSTRATES BY ATOMIC LAYER GROWTH PROCESS, J-W. Chung, F. S. Ohuchi, Univ of Washington, Dept of MS&E, Seattle, WA.

N3.72
EXTENDED DEFECTS IN MOCVD-GROWN GaN FILMS, Xuehua Wu, Univ of California-S Barbara, Dept of Materials, Santa Barbara, CA; Stacia Keller, Univ of California-S Barbara, Dept of ECE, Santa Barbara, CA; Steven P. DenBaars, James S. Speck, Univ of California-S Barbara, Dept of Materials, Santa Barbara, CA.

N3.73
MICROSTRUCTURAL CHARACTERIZATION OF GaN FILMS GROWN ON SPINEL tex2html_wrap_inline965 BY LOW PRESSURE METAL-ORGANIC CHEMICAL VAPOR DEPOSITION, Long Wang, Xiaoli Wei, P. Pirouz, Case Western Reserve Univ, Dept of MS&E, Cleveland, OH; Jinwei Yang, M. Asif Khan, APA Optics Inc, Blaine, MN.

N3.74
TEM STUDY OF MBE-GROWN GROUP-III ARSENIDE NITRIDE ALLOYS, Alan Schwartzman, Gaudaloupe Mendoza-Diaz, Rod Beresford, Kevin S. Stevens, Brown Univ, Engineering Div, Providence, RI.

N3.75
HIGH RESOLUTION X-RAY DIFFRACTION OF GaN GROWN ON SAPPHIRE SUBSTRATES, Adam Saxler, Northwestern Univ, Dept of Electrical & Computer Engr, Evanston, IL; Michael A. Capano, Air Force Wright Laboratory, WL/MLPO Materials Directorate, Wright Patterson AFB, OH; William C. Mitchel, Air Force Wright Laboratory, WL/MLPO, Wright Patterson AFB, OH; Patrick Kung, Xiaolong Zhang, Danielle Walker, Manijeh Razeghi, Northwestern Univ, Dept of Electrical & Computer Engr, Evanston, IL.

N3.76
STRUCTURAL ANALYSIS OF GaN AND GaN/InGaN/GaN DH STRUCTURES ON SAPPHIRE(0001) SUBSTRATE GROWN BY MOCVD, Hisao Sato, Tokushima Univ, Dept of Electrical & Electronic Engr, Tokushima, JAPAN; Yoshiki Naoi, Shiro Sakai, Tokushima Univ, Dept of Elect & Electronic Engr, Tokushima, JAPAN.

N3.77
NANOPIPES AND INVERSION DOMAINS IN HIGH QUALITY GaN EPITAXIAL LAYERS, F. A. Ponce, Xerox Palo Alto Research Center, Electronic Materials Lab, Palo Alto, CA; D. Cherns, W. T. Young, J. W. Steeds, Univ of Bristol, H H Wills Physics Lab, Bristol, UNITED KINGDOM; S. Nakamura, Nichia Chemical Industries Ltd, Dept of Research & Development, Tokushima, JAPAN.

N3.78
STM OBSERVATION OF NITRIDED-Ga ON Si, Yoshinobu Nakada, Joint Res Ctr for Atom Technology, Angstrom Technology Partnership, Ibaraki, JAPAN; Shiro Miwa, Hajime Okumura, Joint Res Ctr for Atom Technology, Ozeki Research Group, Ibaraki, JAPAN.

N3.79
MONITORING OF INDIUM X-RAY PEAK TO OPTIMIZE InGaN LAYER GROWN BY MOCVD, Hongoiang Lu, Rensselaer Polytechnic Inst, Troy, NY; Malathi Thothathiri, Rensselaer Polytechnic Inst, Dept of Materials Engr, Troy, NY; Ziming Wu, Ishwara Bhat, Rensselaer Polytechnic Inst, Dept of EC&SE, Troy, NY.

N3.80
HIGH RESOLUTION X-RAY DIFFRACTION FROM EPITAXIAL GALLIUM NITRIDE FILMS, T. Lafford, Neil Loxley, Bede Scientific Inc, Applications Lab, Durham, UNITED KINGDOM; Brian K. Tanner, Univ of Durham, Dept of Physics, Durham, UNITED KINGDOM.

N3.81
HIGH-RESOLUTION OF X-RAY CHARACTERIZATION OF InGaN/GaN SUPERLATTICES GROWN ON SAPPHIRE SUBSTRATES WITH GaN LAYERS, Wei Li, Peder Bergman, Linkoping Univ, Dept of Physics & Measurement Tech, Linkoping, SWEDEN; Ivan Ivanov, Linkoping Univ, IFM, Linkoping City, SWEDEN.

N3.82
COMPARISION OF THE MICROSTRUCTURE OF AlN FILMS GROWN BY MOCVD AND BY PLD ON SAPPHIRE AND SiC SUBSTRATES, Y. X. Li, Univ of Maryland, Dept of Materials & Nuclear Engr, College Park, MD; Lourdes Salamanca-Riba, Univ of Maryland, Dept of Matls & Nuclear Engr, College Park, MD; Vitaly Talyansky, Venky T. Venkatesan, Univ of Maryland, Dept of Physics, College Park, MD; Peizhen Zhou, C. Wongchigul, Howard Univ, School of Engineering, Washington DC, ; Michael G. Spencer, Howard Univ, Dept of Electrical Engr, Washington, DC.

N3.83
STRUCTURAL CHARACTERISTICS OF MOCVD GROWN AlN FILMS WITH DIFFERENT CARBON CONCENTRATIONS, Y. X. Li, Univ of Maryland, Dept of Materials & Nuclear Engr, College Park, MD; Lourdes Salamanca-Riba, Univ of Maryland, Dept of Matls & Nuclear Engr, College Park, MD; Peizhen Zhou, C. Wongchigul, Howard Univ, School of Engineering, Washington DC, ; Michael G. Spencer, Howard Univ, Dept of Electrical Engr, Washington, DC.

N3.84
ATOMIC SCALE IN DISTRIBUTION IN AN tex2html_wrap_inline967 GREEN LIGHT EMITTING QUANTUM WELL STRUCTURE, Christian Kisielowski, Lawrence Berkeley National Laboratory, Berkeley, CA; Joachim Krueger, Lawrence Berkeley National Laboratory, Materials Science Div, Berkeley, CA; Zuzanna Liliental-Weber, Lawrence Berkeley National Laboratory, Berkeley, CA; Eicke R. Weber, Univ of California-Berkeley, Dept of Matls Science & Mineral Engr , Berkeley, CA.

N3.85
IN-SITU REFLECTIVE HIGH ENERGY ELECTRON DIFFRACTION (RHEED) STUDY OF STRAIN AND SURFACE MORPHOLOGY EVOLUTION OF AlN THIN FILMS DURING GROWTH, Feng Jin, Wayne State Univ, Dept of Electrical & Computer Engr, Detroit, MI; Gregory W. Auner, Wayne State Univ, Dept of ECE, Detroit, MI; Ratna Naik, Wayne State Univ, Dept of Physics & Astronomy, Detroit, MI; Uma Rao, Wayne State Univ, Dept of Electrical & Computer Engr, Detroit, MI.

N3.86
THREADING DISLOCATIONS IN GaN LAYERS DEPOSITED ON (0001) SAPPHIRE SUBSTRATES BY OMVPE AND THEIR ORIGIN, Chimin Hu, Subhash Mahajan, Carnegie Mellon Univ, Dept of Materials Science, Pittsburgh, PA; F. P. Dabkowski, Polaroid Corp, Norwood, MA; A. K. Chin, Polaroid Corp, Microelectronics Lab, Norwood, MA.

N3.87
CHARACTERIZATION OF GaN NEEDLES AND PLATELETS GROWN AT ATMOSPHERIC PRESSURE USING NH tex2html_wrap_inline969 IN H tex2html_wrap_inline961 , Ruediger Held, Univ of Minnesota, Dept of Materials Science, Minneapolis, MN; Philip I. Cohen, Philip I. Cohen, Amir M. Dabiran, Brian E. Ishaug, Univ of Minnesota, Dept of Electrical Engr, Minneapolis, MN; Alexander Parkhomovsky, Univ of Minnesota, Dept of Materials Science, Minneapolis, MN.

N3.88
HIGH RESOLUTION X-RAY DIFFRACTION ANALYSIS OF GaN, AlGaN and AlN LAYERS GROWN BY OMVPE, Mark S. Goorsky, Univ of California-Los Angeles, Dept of MS&E, Los Angeles, CA; A. Y. Polyakov, Carnegie Mellon Univ, MS&E, Pittsburgh, PA; Marek Skowronski, M. Shin, Carnegie Mellon Univ, Dept of MS&E, Pittsburgh, PA; D. W. Greve, Carnegie Mellon Univ, Dept of Electrical & Computer Engr, Pittsburgh, PA.

N3.89
STUDY OF IBAD DEPOSITED AlN FILMS FOR VACUUM DIODE ELECTRON EMISSION, Eric W. Forsythe, Structural Materials Industries Inc, Piscataway, NJ; James A. Sprague, Naval Research Laboratory, Surface Modification Branch, Washington, DC; B. A. Khan, Briarcliff Manor, NY; Sanjay Metha, Lehigh Univ, Whitaker Lab, Bethleham, PA; David A. Smith, Lehigh Univ, Dept of MS&E, Bethleham, PA; Brian Ahern, D. W. Weyburne, USAF Rome Laboratory, Hanscom AFB, MA; Gary S. Tompa, Structural Materials Industries Inc, Piscataway, NJ.

N3.90
MICROSTRUCTURE AND GROWTH MORPHOLOGY RELATED TO ELECTRO-OPTICAL PROPERTIES OF HETEROEPITAXIAL WURZIT GaN ON SAPPHIRE (0001) SUBSTRATES, Silke Christiansen, Univ Erlangen-Nurnberg, Inst Werkstoffwissenschaften, Erlangen, GERMANY; Martin Albrecht, Univ Erlangen-Nurnberg, Dept Mikrocharakterisierung, Erlangen, GERMANY; Wolfgang Dorsch, Univ Erlangen-Nurnberg, Mikrocharakterisierung, Erlangen, GERMANY; Horst P. Strunk, Univ Erlangen-Nurnberg, Inst Materials Science, Erlangen, GERMANY; Carlo Zanotti-Fregonara, MASPEC Inst, Parma, ITALY; Giancarlo Salviati, CNR, MASPEC Inst, Parma, ITALY; A. Pelzmann, M. Mayer, M. Kamp, K. J. Ebeling, Univ Ulm, Ulm, GERMANY.

SESSION N4: MBE GROWTH AND CHARACTERIZATION
Chairs: Cammy R. Abernathy and G. B. Stringfellow
Tuesday Morning, December 3, 1996
America South (W)
9:00 AM *N4.1
MBE-GROWTH OF (In)GaN FOR LED APPLICATIONS, Henning Riechert, Siemens AG, Corporate R&D, Munich, GERMANY; R. Averbeck, A. Graber, M. Schienle, U. Strauss, H. Tews, Siemens AG, Corporate Research & Development, Munich, GERMANY.

9:30 AM N4.2
GROWTH AND CHARACTERIZATION OF tex2html_wrap_inline973 MULTI QUANTUM WELLS BY MBE, Raj Singh, Boston Univ, Dept of ECS, Boston, MA; D. Doppalapudi, Boston Univ, Dept of Manufacturing Engr, Boston, MA; Theodore D. Moustakas, Boston Univ, Dept of ES&CS, Boston, MA.

9:45 AM N4.3
NH tex2html_wrap_inline969 LIMITED VERSUS Ga LIMITED GROWTH OF GaN BY MBE, Ruediger Held, Univ of Minnesota, Dept of Materials Science, Minneapolis, MN; Philip I. Cohen, Devin E. Crawford, Andrew M. Johnston, Amir M. Dabiran, Univ of Minnesota, Dept of Electrical Engr, Minneapolis, MN.

10:00 AM BREAK

10:30 AM *N4.4
ON SURFACE CRACKING OF AMMONIA FOR MBE OF GaN, M. Kamp, M. Mayer, A. Pelzmann, K. J. Ebeling, Univ Ulm, Ulm, GERMANY.

11:00 AM N4.5
MBE GROWTH OF III-V NITRIDE FILMS AND QUANTUM WELL STRUCTURES USING MULTIPLE RF PLASMA SOURCES, M. A.L. Johnson, North Carolina State Univ, Dept of Physics, Raleigh, NC; W. C. Hughes, W. H. Roland, J. W. Cook, North Carolina State Univ, Raleigh, NC; J. F. Schetzina, North Carolina State Univ, Dept of Physics, Raleigh, NC; J. A. Edmond, Cree Research Inc, Durham, NC.

11:15 AM N4.6
RAMAN AND ATOMIC FORCE MICROSCOPY OF GaN FILMS, Leah Bergman, Robert J. Nemanich, North Carolina State Univ, Dept of Physics, Raleigh, NC; Michael D. Bremser, North Carolina State Univ, Dept of MS&E, Raleigh, NC; James A. Christman, North Carolina State Univ, Dept of Physics, Raleigh, NC; Sean W. King, North Carolina State Univ, Dept of MS&E, Raleigh, NC.

11:30 AM N4.7
DIRECT IMAGING OF IMPURITY-INDUCED RAMAN SCATTERING IN GaN, F. A. Ponce, Xerox Palo Alto Research Center, Electronic Materials Lab, Palo Alto, CA; J. W. Steeds, Univ of Bristol, H H Wills Physics Lab, Bristol, UNITED KINGDOM; G. D. Pitt, C. D. Dyer, Renishaw plc, Gloucestershire, UNITED KINGDOM.

11:45 AM N4.8
DEFECT ABSORPTION IN GaN BETWEEN 3.0 AND 3.3 eV, W. Rieger, O. Ambacher, E. Rohrer, H. Angerer, Martin Stutzmann, Walter-Schottky-Inst, Garching, GERMANY.

SESSION N5: ELECTRONIC AND OPTICAL PROPERTIES
Chairs: Andreas Hangleiter and B. A. Monemar
Tuesday Afternoon, December 3, 1996
America South (W)
2:00 PM *N5.1
EFFECTS OF STRAIN FIELDS ON EXCITONS AND PHONONS IN WURTZITE GAN EPILAYERS, Bernard Gil, O. Briot, Univ de Montpellier II, CNRS-GES, Montpellier, FRANCE; R. L. Aulombard, Univ Aix-Marseilles III, CNRS-GES, Montpellier, FRANCE; J. F. Demangeot, J. Frandon, M. Renucci, Univ Paul Sabatier, Lab de Physique des Solides, Toulouse, FRANCE.

2:30 PM N5.2
INTERNAL STRESS EFFECTS IN Si-DOPED, Ge-DOPED, AND UNDOPED GALLIUM NITRIDE EPITAXIAL FILMS, Joel W. Ager, T. Suski, Lawrence Berkeley National Laboratory, Material Science Div, Berkeley, CA; Sergei Ruvimov, Lawrence Berkeley National Laboratory, Berkeley, CA; Joachim Krueger, Giuseppina Conti, Lawrence Berkeley National Laboratory, Materials Science Div, Berkeley, CA; Eicke R. Weber, Univ of California-Berkeley, Dept of Matls Science & Mineral Engr , Berkeley, CA; M. D. Bremser, North Carolina State Univ, Dept of Materials Science, Raleigh, NC; R. F. Davis, North Carolina State Univ, Dept of MS&E, Raleigh, NC; Chihping Kuo, Hewlett Packard Co, Optoelectronics Div, San Jose, CA.

2:45 PM N5.3
ANALYSIS OF STRAIN IN GaN ON tex2html_wrap_inline951 AND 6H-SiC: TEMPERATURE DEPENDENCE OF EXCITONIC SPECTRA, N. V. Edwards, North Carolina State Univ, Dept of MS&E, Raleigh, NC; M. D. Bremser, North Carolina State Univ, Dept of Materials Science, Raleigh, NC; M. Horton, N. Perkins, Univ of Wisconsin-Madison, Dept of Chemical Engr, Madison, WI; T. W. Weeks, North Carolina State Univ, Dept of MS&E, Raleigh, NC; H. Liu, Emcore Corp, Somerset, NJ; R. A. Stall, Emcore Corp, Emcore Research Lab, Somerset, NJ; Thomas F. Kuech, Univ of Wisconsin-Madison, Dept of Chemical Engr, Madison, WI; R. F. Davis, North Carolina State Univ, Dept of MS&E, Raleigh, NC; D. E. Aspnes, North Carolina State Univ, Dept of Physics, Raleigh, NC.

3:00 PM BREAK

3:30 PM *N5.4
STRUCTURAL AND OPTICAL PROPERTIES OF HOMOEPITAXIAL GaN LAYERS, Jacek M. Baranowski, Univ of Warsaw, Inst of Experimental Physics, Warsaw, POLAND.

4:00 PM N5.5
SPATIAL DISTRIBUTION OF ELECTRON CONCENTRATION AND STRAIN IN BULK GaN CRYSTALS-RELATION TO GROWTH MECHANISMS, Piotr Perlin, Univ of New Mexico, Ctr for High Tech Matls, Albuquerque, NM; Alain Polian, Jean-Claude Chervin, Univ de Paris VI, Physique des Milieux Condenses, Paris, FRANCE; Elzbieta Litwin-Staszewska, Tadeusz Suski, High Pressure Research Center, "Unipress", Warsaw, POLAND; Izabella Grzegory, Sylwester Porowski, High Pressure Research Center, Polish Academy of Sciences, Warsaw, POLAND.

4:15 PM N5.6
OPTICAL AND STRUCTURAL PROPERTIES OF AlGaN/GaN QUANTUM WELL STRUCTURES GROWN BY MOCVD ON SAPPHIRE, R. Niebuhr, Fraunhofer-Inst, Applied Solid State Physics, Freiburg, GERMANY; K. H. Bachem, Fraunhofer-Inst, Inst Angewandte Festkorperphysik, Freiburg, GERMANY; C. Merz, S. Santic, U. Kaufmann, D. Behr, J. Wagner, W. Rothemund, Y. Lu, Fraunhofer-Inst, Freiburg, GERMANY; Holger Jurgensen, Aixtron GmbH, Aachen, GERMANY.

4:30 PM N5.7
DEPTH-PROFILE OF THE EXCITONIC LUMINESCENCE IN GALLIUM NITRIDE LAYERS, Axel Hoffman, Technische Univ Berlin, Inst fur Festkorperphysik, Berlin, GERMANY; Henrik Siegle, Technische Univ Berlin, Berlin, GERMANY; Christian Thomsen, Technische Univ Berlin, Inst for Festkorperphysik, Berlin, GERMANY; Ludger Eckey, Technische Univ Berlin, Berlin, GERMANY; Theeradetch Detchprohm, Kazumasa Hiramatsu, Nagoya Univ, Dept of Electronics, Nagoya, JAPAN.

4:45 PM N5.8
THICKNESS-DEPENDENCE OF ELECTRONIC PROPERTIES OF GaN EPI-LAYERS, Werner K. Goetz, Xerox Palo Alto Research Center, Dept of EML, Palo Alto, CA; Linda T. Romano, Xerox Palo Alto Research Center, Electronics Materials Lab, Palo Alto, CA; N. M. Johnson, Xerox Palo Alto Research Center, Electronic Materials Lab, Palo Alto, CA; J. Walker, Xerox Palo Alto Research Center, Dept of EML, Palo Alto, CA; D. P. Bour, Xerox Palo Alto Research Center, Electronics Materials Lab, Palo Alto, CA; Richard J. Molnar, MIT Lincoln Laboratory, Lexington, MA.

SESSION N6: POSTER SESSION: CHARACTERIZATION OF III-V NITRIDES
Tuesday Evening, December 3, 1996
8:00 P.M.
America Ballroom (W)
N6.1
EXTRINSIC PHOTOCONDUCTANCE OF GaN, Rong Zhang, Univ of Maryland, Dept of Electrical Engr, Baltimore, MD; Zhenchun Huang, NASA Goddard Space Flight Ctr, Greenbelt, MD; Youdou Zheng, Dept of Physics, Nanjing, CHINA; Li Yan, Univ of Maryland, Dept of Electrical Engr, Baltimore, MD; J. C. Chen, Univ of Maryland, Dept of Physics, Baltimore, MD; Bo Guo, Univ of Maryland, Dept of Electrical Engr, Baltimore, MD.

N6.2
ELECTRON - PHONON SCATTERING IN Si DOPED GaN UNDER HYDROSTATIC PRESSURE - A MODEL FOR AlGaN ALLOYS, Christian Wetzel, J. Ager, Wladyslaw Walukiewicz, T. Suski, Lawrence Berkeley National Laboratory, Material Science Div, Berkeley, CA.

N6.3
INTRINSIC MOBILITY LIMITS OF TWO-DIMENSIONAL ELECTRON GAS IN AlGaN/GaN HETEROSTRUCTURES, Wladyslaw Walukiewicz, Lawrence Berkeley National Laboratory, Material Science Div, Berkeley, CA; Leonardo Hsu, Univ of California-Berkeley, Dept of Physics, Berkeley, CA; Joan M. Redwing, Advanced Technology Materials Inc, Dept of Epitronics, Danbury, CT.

N6.4
CHARACTERIZATION OF CAPACITOR HETEROSTRUCTURES BASED ON PLD GROWN AlN, Vitaly Talyansky, Univ of Maryland, Dept of Physics, College Park, MD; Agis Iliadis, Univ of Maryland, Dept of Electrical Engr, College Park, MD; Ken Jones, U.S. Army Research Laboratory, Fort Monmouth, NJ; Joseph R. Flemish, U.S. Army Research Laboratory, Electronics & Power Sources Directorate, Fort Monmouth, NJ; Venky T. Venkatesan, R. P. Sharma, Univ of Maryland, Dept of Physics, College Park, MD.

N6.5
LIGHT-INDUCED ELECTRON SPIN RESONANCE OF GALLIUM NITRIDE: THE LEVEL POSTION OF THE DEEP DEFECT, Nils M. Reinacher, Technische Univ Munich, Walter Schottky Inst, Garching, GERMANY; O. Ambacher, Walter-Schottky-Inst, Garching, GERMANY; M. S. Brandt, Technische Univ Munich, Dept of Physics, Garching, GERMANY; Martin Stutzmann, Walter-Schottky-Inst, Garching, GERMANY.

N6.6
EFFECTS OF X-RAY AND tex2html_wrap_inline979 -RAY IRRADIATION ON GaN, Chang H. Qiu, M. W. Leksono, J. I. Pankove, Astralux Inc, Boulder, CO; C. Rossington, Lawrence Berkeley National Laboratory, Berkeley, CA; Eugene E Haller, Lawrence Berkeley National Laboratory, Dept of Material Science, Berkeley, CA.

N6.7
STUDIES OF ELECTRICALLY AND RECONBINATION ACTIVE CENTERS IN UNDOPED GaN GROWN BY OMVPE, A. Y. Polyakov, Carnegie Mellon Univ, MS&E, Pittsburgh, PA; A. V. Govorkov, Inst of Rare Metals, Dept of Physics, Moscow, RUSSIA; N. B. Smirnov, Inst of Rare Metals, Moscow, RUSSIA; M. Shin, Marek Skowronski, Carnegie Mellon Univ, Dept of MS&E, Pittsburgh, PA; D. W. Greve, Carnegie Mellon Univ, Dept of Electrical & Computer Engr, Pittsburgh, PA.

N6.8
PHOTOCONDUCTING PROPERTIES OF ULTRAVIOLET DETECTORS BASED ON GaN AND Al tex2html_wrap_inline981 Ga tex2html_wrap_inline983 FILMS GROWN BY ECR-MBE, M. Mirsa, A. V. Sampath, Boston Univ, Dept of ES&CE, Boston, MA; Theodore D. Moustakas, Boston Univ, Dept of ES&CS, Boston, MA.

N6.9
ELECTRICAL CHARACTERIZATION OF MIS STRUCTURES WITH PSMBE GROWN AlN AS INSULATOR, Regina Y. Krupitskaya, Gregory W. Auner, Tom E. Daley, Wayne State Univ, Dept of ECE, Detroit, MI.

N6.10
OPTICAL QUENCHING OF PHOTOCONDUCTIVITY IN GaN PHOTOCONDUCTORS, Zhenchun Huang, NASA Goddard Space Flight Ctr, Greenbelt, MD; J. C. Chen, Univ of Maryland, Dept of Electrical Engr, Baltimore, MD; Peter K. Shu, NASA Goddard Space Flight Ctr, Greenbelt, MD; David Brent Mott, NASA Goddard Space Flight Ctr, Code 718, Greenbelt, MD.

N6.11
ELECTRON MOBILITY AND DRIFT VELOCITY IN GaN WITH HIGH ELECTRON CONCENTRATION, Boris L. Gelmont, Univ of Virginia, Dept of Electrical Engr, Charlottesville, VA.

N6.12
P-TYPE CONDUCTIVITY WITH A HIGH HOLE MOBILITY IN CUBIC GaN/GaAs EPILAYERS, Donat Josef As, Univ Paderborn, Dept of FB-6 Physik, Paderborn, GERMANY; Alexander Ruther, Martin Luebbers, J. Mimkes, Klaus Lischka, Detlef Schikora, Univ Paderborn, Dept of Physics, Padrborn, GERMANY.

N6.13
OPTICAL DIELECTRIC RESPONSE OF GALLIUM NITRIDE STUDIED BY VARIABLE ANGLE SPECTROSCOPIC ELLIPSOMETRY, Huade Walter Yao, C. H. Yan, Univ of Nebraska, Dept of Electrical Engr, Lincoln, NE; H. A. Jenkinson, U.S. Army ARDEC, Picatinny Arsenal, NJ; J. M. Zavada, U.S. Army Research Office, Electronics Div, Research Triangle Pa, NC; James S. Speck, S. D. Baars, Univ of California-S Barbara, Dept of Materials, Santa Barbara, CA.

N6.14
CHANGES IN OPTICAL TRANSMITTANCE OF AlN THIN FILMS EXPOSED TO ATMOSPHERE, Yoshifumi Sakuragi, Yoshihisa Watanabe, Yoshikazu Nakamura, Yoshiki Amamoto, National Defense Academy, Dept of MS&E, Kanagawa, JAPAN.

N6.15
SUBPICOSECOND TIME-RESOLVED RAMAN STUDIES OF NON-EQUILIBRIUM EXCITATIONS IN WURTZITE GAN, K. T. Tsen, Arizona State Univ, Dept of Physics & Astronomy, Tempe, AZ; R. P. Joshi, Old Dominion Univ, Dept of Electrical & Computer Engr, Norfolk, VA; D. K. Ferry, Arizona State Univ, Dept of Electrical Engr, Tempe, AZ; A. Botchkarev, B. Sverdlov, A. Salvador, H. Morkoc, Univ of Illinois-Urbana, Coordinated Science Lab, Urbana, IL.

N6.16
AN OPTICAL WAVEGUIDE FORMED BY ALUMINUM NITRIDE THIN FILM ON SAPPHIRE, Xiao Tang, Howard Univ, Dept of Electrical Engr, Washington, DC; Yifang Yuan, East China Univ of Tech, Shanghai, CHINA; Kobchat Wongchotigul, Howard Univ, School of Engineering, Washington DC, ; Michael G. Spencer, Howard Univ, Dept of Electrical Engr, Washington, DC.

N6.17
OBSERVATION OF NEAR BANDAGE TRANSITION IN ALUMINUM NITRIDE THIN FILM GROWN BY MOCVD, Xiao Tang, Howard Univ, Dept of Electrical Engr, Washington, DC; Fazla Hossain, Peizhen Zhou, Kobchat Wongchotigul, Howard Univ, School of Engineering, Washington, DC; Michael G. Spencer, Howard Univ, Dept of Electrical Engr, Washington, DC.

N6.18
OPTICALLY DETECTED ELECTRON NUCLEAR DOUBLE RESONANCE ON THE RESIDUAL DONOR IN GaN, Johann-Martin Spaeth, Friedrich-Karl Koschnick, Karsten Michael, Univ Paderborn, Dept of Physics, Paderborn, GERMANY; Bernard Beaumont, Pierre Gibart, CNRS, CRHEA, Valbonne, FRANCE.

N6.19
DISLOCATION-RELATED LUMINESCENCE IN WURTZITE GaN, Yuri G Shreter, A.F. Ioffe Phys-Technical Inst, St. Petersburg, RUSSIA; M. D. Bremser, North Carolina State Univ, Dept of Materials Science, Raleigh, NC.

N6.20
STRAIN EFFECTS ON EXCITONIC TRANSITIONS IN GaN, Wei Shan, Oklahoma State Univ, Center for Laser Research, Stillwater, OK; Barb Goldenberg, Honeywell Technology Center, Plymouth, MN; R. F. Davis, Mike D. Bremser, William G. Perry, North Carolina State Univ, Dept of MS&E, Raleigh, NC; Jin-Joo Song, Oklahoma State Univ, Center for Laser Research, Stillwater, OK; Robert J. Hauenstein, Oklahoma State Univ, Dept of Physics, Stillwater, OK.

N6.21
INFLUENCE OF STRAIN ON THE BOUND EXCITON ENERGY IN GaN/AlN/6H-SiC(0001) HETEROSTRUCTURES, William G. Perry, Tsvetanka Zheleva, North Carolina State Univ, Dept of MS&E, Raleigh, NC; M. D. Bremser, North Carolina State Univ, Dept of Materials Science, Raleigh, NC; R. F. Davis, North Carolina State Univ, Dept of MS&E, Raleigh, NC.

N6.22
COEXISTENCE OF SHALLOW AND LOCALIZED DONOR CENTERS IN BULK GaN CRYSTALS STUDIED BY HIGH PRESSURE RAMAN SPECTROSCOPY, Piotr Perlin, Univ of New Mexico, Ctr for High Tech Matls, Albuquerque, NM; Alain Polian, Jean-Claude Chervin, Univ de Paris VI, Physique des Milieux Condenses, Paris, FRANCE; Wojciech Knap, Jean Camassel, Univ de Montpellier II, Group d'Etudes des Semiconducteur, Montpellier, FRANCE; Tadeusz Suski, High Pressure Research Center, "Unipress", Warsaw, POLAND; Izabella Grzegory, Sylwester Porowski, High Pressure Research Center, Polish Academy of Sciences, Warsaw, POLAND; J. W. Erickson, Charles Evans & Associates, Redwood City, CA.

N6.23
DETERMINATION OF THE REFRACTIVE INDEX AND ABSORPTION COEFFICIENT OF GaN FROM OPTICAL TRANSMISSION, REFLECTANCE AND PHOTOLUMINESCENCE MEASUREMENTS, John F. Muth, North Carolina State Univ, Dept of ECE, Raleigh, NC; I. K. Shmagin, S. Krishnankutty, North Carolina State Univ, Dept of Electrical & Computer Engr, Raleigh, NC; R. M. Kolbas, North Carolina State Univ, Dept of Elecrical & Computer Engr, Raleigh, NC; Steven P. DenBaars, Univ of California-S Barbara, Dept of Materials, Santa Barbara, CA; U. K. Mishra, Univ of California-S Barbara, Dept of Electrical & Computer Engr, Santa Barbara, CA; Stacia Keller, Univ of California-S Barbara, Dept of ECE, Santa Barbara, CA.

N6.24
RAMAN SPECTROSCOPY OF GALLIUM NITRIDE AND RELATED MATERIALS, Frederick H Long,; Julian Burton, Stephen M. Cohen, Rutgers Univ, Dept of Chemistry,; Y Li, Rutgers Univ, Electrical Engineering,; Yicheng Lu, Rutgers Univ, Dept of ECE, Piscataway, NJ.

N6.25
OPTICAL STUDIES OF MOCVD InGaN ALLOYS, Brian D Little, Oklahoma State Univ, Dept of Physics, Stillwater, OK; Wei Shan, Jin-Joo Song, Oklahoma State Univ, Center for Laser Research, Stillwater, OK; M. Schurman, Zhe Chuan C. Feng, Emcore Corp, Somerest, NJ; R. A. Stall, Emcore Corp, Emcore Research Lab, Somerset, NJ.

N6.26
MULTIPHOTON EXCITATION STUDIES ON GaN WITH ps PULSES, Imke Helga Libon, Yuen-Ron Shen, Doseok Kim, Univ of California-Berkeley, Dept of Physics, Berkeley, CA; Vesselinka Petrova-Koch, Technische Univ Munich, Dept of Physics, Garching, GERMANY; Carsten Voelkmann, Univ of California-Berkeley, Dept of Physics, Berkeley, CA.

N6.27
PHOTOLUMINESCENCE DECAY DYNAMICS IN AN InGaN/GaN/AlGaN SINGLE QUANTUM WELL, Wei Li, Peder Bergman, Linkoping Univ, Dept of Physics & Measurement Tech, Linkoping, SWEDEN.

N6.28
EFFECT OF BIEXCITON IN GaN/AlGaN QUANTUM WELL, Boris Monozon, Marine Technical Univ, Dept of Physics, St. Petersburg, RUSSIA; Elena Hartung, Univ of North Carolina, Dept of Physics, Wilmington, NC.

N6.29
TIME-DEPENDENT STUDY OF LOW ENERGY ELECTRON BEAM IRRADIATION OF Mg-DOPED GaN FILMS GROWN BY METALORGANIC CHEMICAL VAPOR DEPOSITION, Xiuling Li, J. J. Coleman, Univ of Illinois-Urbana, Microelectronics Lab, Urbana, IL.

N6.30
CHARACTERIZATION OF NEAR EDGE OPTICAL TRANSITIONS IN UNDOPED AND DOPED GaN/SAPPHIRE GROWN BY MOVPE, HVPE AND GSMBE, J. Massies, Pierre Gibart, CNRS, CRHEA, Valbonne, FRANCE; N. Grandjean, CNRS, CHREA, Valbonne, FRANCE; M. Leroux, Bernard Beaumont, CNRS, CRHEA, Vanbonne, FRANCE.

N6.31
PHOTOLUMINESCENCE EXCITATION STUDIES OF THE OPTICAL TRANSITIONS IN GaN, Dmitri Kovalev, Boris Averboukh, Diter Volm, Bruno K. Meyer, Technische Univ Munich, Dept of Physics, Garching, GERMANY; Hiroshi Amano, I. Akasaki, Meijo Univ, Dept of Electrical & Electronic Engr, Nagoya, JAPAN.

N6.32
INVESTIGATION OF THE OPTICAL PROPERTIES OF InGaN/AlGaN Q.W. STRUCTURES EMITTING IN THE BLUE AND GREEN SPECTRUM, V. A. Joshkin, M. A. Aumer, J. C. Roberts, F. G. McIntosh, S. M. Bedair, North Carolina State Univ, Dept of Electrical & Computer Engr, Raleigh, NC; S. Krishnankuhy, North Carolina State Univ, Dept of ECE, Raleigh, NC; I. K. Shmagin, North Carolina State Univ, Dept of Electrical & Computer Engr, Raleigh, NC; R. M. Kolbas, North Carolina State Univ, Dept of Elecrical & Computer Engr, Raleigh, NC; S. Lin, L. Wang, Sandia National Laboratories, Albuquerque, NM.

N6.33
OPTICAL TRANSITIONS AND THEIR DYNAMIC PROCESSES IN GaN AND InGaN EPILAYERS, InGaN/GaN, AND GaN/AlGaN MULTIPLE QUANTUM WELLS, Hongxing Jiang, Kansas State Univ, Dept of Physics, Manhattan, KS; M. Smith, Kansas State Univ, Dept of Physics, Manhattan, KS; Jingyu Y. Lin, Kansas State Univ, Dept of Physics, Manhattan, KS; Su-Huai Wei, National Renewable Energy Laboratory, Golden, CO; M. Asif Khan, Qishen Chen, APA Optics Inc, Blaine, MN; A. Salvador, Univ of Illinois-Urbana, Coordinated Science Lab, Urbana, IL; A. Borchkarev, Univ of Illinois-Urbana, Materials Lab & Coordinated Science Lab, Urbana, IL; H. Morkoc, Univ of Illinois-Urbana, Coordinated Science Lab, Urbana, IL.

N6.34
TIME-RESOLVED PHOTOLUMINESCENCE EXCITATION SPECTROSCOPY OF ERBIUM-DOPED AIN EPILAYER PREPARED BY MOMBE, Uwe Hommerick, Hampton Univ, Res Ctr for Optical Physics, Hampton, VA; Xingkun Wu, Hampton Univ, Research Center for Optical Physics, Hampton, VA; John Devin MacKenzie, Cammy R. Abernathy, Steve J. Pearton, Univ of Florida, Dept of MS&E, Gainesville, FL; R N Schwartz, R. G. Wilson, Hughes Research Laboratories, Malibu, CA; J. M. Zavada, U.S. Army Research Office, Electronics Div, Research Triangle Pa, NC.

N6.35
PHOTOLUMINESCENCE OF Fe-COMPLEXES IN GaN, Axel Hoffman, Technische Univ Berlin, Inst fur Festkorperphysik, Berlin, GERMANY; Patrick Thurian, Peter Maxim, Ludger Eckey, Robert Heitz, Immanuel Broser, Technische Univ Berlin, Berlin, GERMANY; Klaus Pressel, Inst for Semiconductor Physics, Frankfurt (Oder), GERMANY; Bruno K. Meyer, Technische Univ Munich, Dept of Physics, Garching, GERMANY; Jurgen Schneider, Johannes Baur, Michael Kunzer, Fraunhofer-Inst, Freiburg, GERMANY.

N6.36
PHYSICAL NATURE OF THE UV TRANSITION IN GaN, W. G. Grieshaber, Boston Univ, Dept of Electrical & Computer Engr, Boston, MA; E. F. Schubert, Boston Univ, Dept of ECE, Boston, MA; R. F. Karlicek, Emcore Corp, Somerset, NJ; C. A. Tran, Emcore Corp, Dept of R&D, Somerset, NJ; Matthew J. Schurman, Emcore Corp, Somerset, NJ.

N6.37
STRAIN RELATED STRUCTURAL AND OPTICAL PROPERTIES OF GaN FILMS ON SAPPHIRE, Jaime A. Freitas, Sachs & Freeman Associates Inc, Landover, MD; Alma E. Wickenden, Daniel D. Koleske, Naval Research Laboratory, Electronic Science & Tech Div, Washington, DC; W. B. Alexander, Naval Research Laboratory, Washington, DC.

N6.38
RAMAN SCATTERING AND PHOTOLUMINESCENCE CHARACTERIZATION AND MAPPING OF GaN, InGaN AND AlGaN THIN FILMS USING A UV EXCITATION RAMAN MICROSCOPE, Zhe Chuan Feng, Emcore Corp, Somerset, NJ.

N6.39
RESONANT RAMAN SCATTERING IN GaN, David John Dewsnip, Univ of Nottingham, Dept of Electrical & Electronic Engr, Nottingham, UNITED KINGDOM; C. T. Foxon, Univ of Nottingham, Dept of Physics, Nottingham, UNITED KINGDOM; S. E. Hooper, Sharp Laboratories of Europe, , Oxford, UNITED KINGDOM; T. C. Cheng, B. G. Bob, Univ of Nottingham, Dept of Physics, Nottingham, UK; J. Morgan, Univ of Nottingham, Dept of Electrical & Electronic Engr, Nottingham, UNITED KINGDOM; J. W. Orton, Univ of Nottingham, Dept of Electrical & Electronic Engineering, Nottingham, UNITED KINGDOM; D. E. Lacklison, I. Harrison, A. V. Andrianov, Univ of Nottingham, Dept of Electrical & Electronic Engr, Nottingham, UNITED KINGDOM.

N6.40
A TEMPERATURE-VARIED PHOTOLUMINESCENCE STUDY OF GaN, InGaN and AlGaN THIN FILMS GROWN BY MOCVD, Dmitri G. Chtchekine, Guy D. Gilliland, Emory Univ, Dept of Physics, Atlanta, GA; Matthew J. Schurman, Zhe Chuan C. Feng, Emcore Corp, Somerset, NJ; R. A. Stall, Emcore Corp, Emcore Research Lab, Somerset, NJ.

N6.41
ANALYSIS OF OPTICAL EMISSION FROM GROUP-III NITRIDE QUANTUM WELL STRUCTURES , Weng W. Chow, Alan F. Wright, Mark V. Weckwerth, Mary H. Crawford, Sandia National Laboratories, Albuquerque, NM.

N6.42
OBSERVATION OF A TWO-DIMENSIONAL ELECTRON GAS IN THE GaN/Al GaN ON SiC SUBSTRATES, Gou-chung Chi, C. F. Lin, National Central Univ, Dept of Physics, Chung-li, TAIWAN; M. S. Feng, J. D. Guo, J. A. Huang, National Chiao Tung Univ, Dept of Electronic Engr, Hsinchu, TAIWAN.

N6.43
CHARACTERIZATION OF GaN FILMS ON SAPPHIRE BY CATHODOLUMINESCENCE, Lan-Lin Chao, G. Slade Cargill, C. Kathandaraman, Columbia Univ, Dept of Chemical Engr, New York, NY.

N6.44
STACKED InGaN QUANTUM WELL STRUCTURES, J. C. Roberts, F. G. McIntosh, M. A. Aumer, North Carolina State Univ, Dept of Electrical & Computer Engr, Raleigh, NC; E. L. Piner, North Carolina State Univ, Dept of Materials, Raleigh, NC; V. A. Joshkin, S. Liu, North Carolina State Univ, Dept of Electrical & Computer Engr, Raleigh, NC; N. A. El-Masry, North Carolina State Univ, Dept of MAT, Raleigh, NC; S. M. Bedair, North Carolina State Univ, Dept of Electrical & Computer Engr, Raleigh, NC.

N6.45
IN-PLANE OPTICAL ANISOTROPIES OF Al tex2html_wrap_inline985 Ga tex2html_wrap_inline987 N (0;SPMlt;=x;SPMlt;=1) FILMS IN THE REGION OF TRANSPARENCY, N. V. Edwards, North Carolina State Univ, Dept of MS&E, Raleigh, NC; U. Rossow, Technische Univ Berlin, Dept of Physics, Berlin, GERMANY; Michael D. Bremser, R. S. Kern, North Carolina State Univ, Dept of MS&E, Raleigh, NC; H. Liu, Emcore Corp, Somerset, NJ; R. F. Davis, North Carolina State Univ, Dept of MS&E, Raleigh, NC; D. E. Aspnes, North Carolina State Univ, Dept of Physics, Raleigh, NC.

N6.46
CHARACTERIZATION OF METAL AND III-V NITRIDE INTERFACES - THERMAL STABILITY AND ELECTRICAL PROPERTIES, Guohua Qiu, Univ of Delaware, Dept of Electrical Engr, Neward, DE; J. Olufemi Olowalafe, Univ of Delaware, Newark, DE.

N6.47
N-K-EDGE EXAFS STUDY OF EPITAXIAL GaN FILMS, Maria Katsikini, Aristotle Univ of Thessaloniki, Dept of Physics, Thessaloniki, GREECE; Eleni Paloura, Martin Fieber-Erdmann, Hahn-Meitner-Inst, Berlin, GERMANY; Theodore D. Moustakas, Boston Univ, Dept of ES&CS, Boston, MA; I. Akasaki, Meijo Univ, Dept of Electrical & Electronic Engr, Nagoya, JAPAN.

N6.48
RUTHERFORD BACKSCATTERING AND ION CHANNELING CHARACTERIZATION OF GROUP III NITRIDE FILMS, J. Farr, Wayne State Univ, Dept of Physics, Detroit, MI; V. Rothberg, Univ of Michigan, Dept of Nuclear Engr,; Matthew J. Schurman, Zhe Chuan C. Feng, Emcore Corp, Somerset, NJ; R. A. Stall, Emcore Corp, Emcore Research Lab, Somerset, NJ; K. R. Padmanabhan, Wayne State Univ, Dept of Physics, Detroit, MI.

N6.49
ANALYSIS OF III-NITRIDE COMPOUNDS USING SECONDARY ION MASS SPECTROMETRY (SIMS), Steven W Novak, Evans East, Plainsboro, NJ; H. Craig Casey, Duke Univ, Dept of Electrical & Computer Engr, Durham, NC.

N6.50
GaN ON (0001) AlN/6H-SiC HETEROJUNCTION VALENCE BAND DISCONTINUITY VS. SURFACE RECONSTRUCTION/INTERFACE DEPENDENCE, Sean W. King, Kieran M. Tracy, North Carolina State Univ, Dept of MS&E, Raleigh, NC; Mark C. Benjamin, Robert J. Nemanich, North Carolina State Univ, Dept of Physics,; R. F. Davis, North Carolina State Univ, Dept of MS&E, Raleigh, NC.

N6.51
EXPERIMENTAL IDENTIFICATION OF THE INTRINSIC DONOR IN GaN, Lars V. Jorgensen, Delft Univ of Technology, Dept of Reactor Physics, Delft, NETHERLANDS; A. C. Kruseman, H. Schut, Delft Univ of Technology, Interfaculty Reactor Inst,; A. van Veen, Delft Univ of Technology, IRI, Delft, NETHERLANDS; M. Fanciulli, Univ of Aarhus, Inst of Physics & Astronomy, Aarhus C, DENMARK; Theodore D. Moustakas, Boston Univ, Dept of ES&CS, Boston, MA.

N6.52
SURFACE MORPHOLOGY OF GaN AND AlN FILMS GROWN BY PRESSURE-ASSISTED MOLECULAR BEAM EPITAXY (MBE) AND BY PULSED LASER DEPOSITION (PLD), Hiroaki Fujii, Univ of California-Berkeley, Dept of Matls Science & Minerial Engr, Berkeley, CA; G. S. Sudhir, Ralf Klockenbrink, Michael S.H. Leung, Univ of California-Berkeley, Dept of Matls Science & Mineral Engr, Berkeley, CA; Christian Kisielowski, Lawrence Berkeley National Laboratory, Berkeley, CA; Eicke R. Weber, Univ of California-Berkeley, Dept of Matls Science & Mineral Engr , Berkeley, CA; Michael Rubin, Lawrence Livermore National Laboratory, Berkeley, CA.

SESSION N7: GROWTH AND DOPING
Chairs: D. P. Bour and Steven P. DenBaars
Wednesday Morning, December 4, 1996
America South (W)
8:30 AM *N7.1
DOPING SOURCES FOR GROWTH OF GROUP III-NITRIDES, Cammy R. Abernathy, Univ of Florida, Dept of MS&E, Gainesville, FL; Tom Groshens, Naval Air Warfare Center, China Lake, CA.

9:00 AM *N7.2
ION IMPLANTATION AND ANNEALING STUDIES IN III-V NITRIDES, John C. Zolper, Sandia National Laboratories, Albuquerque, NM; Steve J. Pearton, Univ of Florida, Dept of MS&E, Gainesville, FL; J. S. Williams, H. H. Tan, Australian National Univ, Dept of Electronic Matls Engr, Canberra, AUSTRALIA; R. A. Stall, Emcore Corp, Emcore Research Lab, Somerset, NJ.

9:30 AM N7.3
DOPING STUDIES OF N AND P-TYPE Al tex2html_wrap_inline981 Ga tex2html_wrap_inline983 N GROWN BY ECR ASSISTED MBE, D. Korakakis, H. M. Ng, Boston Univ, Dept of ECE, Boston, MA; Theodore D. Moustakas, Boston Univ, Dept of ES&CS, Boston, MA.

9:45 AM N7.4
DOPING OF tex2html_wrap_inline995 ON tex2html_wrap_inline997 (6H)-SiC SUBSTRATES VIA ORGANOMETALLIC VAPOR PHASE EPITAXY, Michael D. Bremser, Ok-Hyun Nam, Eric P. Carlson, William G. Perry, R. F. Davis, North Carolina State Univ, Dept of MS&E, Raleigh, NC.

10:00 AM BREAK

10:30 AM *N7.5
INCOMPLETE SOLUBILITY IN NITRIDE ALLOYS, G. B. Stringfellow, Univ of Utah, Dept of Materials Science, Salt Lake City, UT; I. H. Ho, Univ of Utah, Dept of MS&E.

11:00 AM N7.6
DETERMINATION OF THE EXISTENCE AND PERCENTAGE OF CUBIC AND HEXAGONAL PHASES IN GaN USING NEXAFS, Eleni Paloura, Hahn-Meitner-Inst, Berlin, GERMANY; Maria Katsikini, Aristotle Univ of Thessaloniki, Dept of Physics, Thessaloniki, GREECE; Theodore D. Moustakas, Boston Univ, Dept of ES&CS, Boston, MA; Elizabeth Holub-Krappe, Hahn-Meitner-Inst, Berlin, GERMANY; John Antonopoulos, Aristotle Univ of Thessaloniki, Dept of Physics, Thessaloniki, GREECE.

11:15 AM N7.7
PERSISTANT PHOTOCONDUCTIVITY IN N-TYPE GaN, Alma E. Wickenden, Naval Research Laboratory, Electronic Science & Tech Div, Washington, DC; Guy M. Beadie, Naval Research Laboratory, Washington, DC; Daniel D. Koleske, Naval Research Laboratory, Electronic Science & Tech Div, Washington, DC; W. S. Rabinovich, Naval Research Laboratory,; Jaime A. Freitas, Sachs & Freeman Associates Inc, Landover, MD.

11:30 AM N7.8
HYDROGEN DIFFUSION AND PASSIVATION IN GaN/InGaN DOUBLE HETEROSTRUCTURES, Steve J. Pearton, S. Bendi, V. Krishnamoorthy, Kevin S. Jones, Univ of Florida, Dept of MS&E, Gainesville, FL; R. G. Wilson, Hughes Research Laboratories, Malibu, CA; Fan Ren, Bell Labs, Lucent Technologies, Murray Hill, NJ; R. F. Karlicek, Emcore Corp, Somerset, NJ; R. A. Stall, Emcore Corp, Emcore Research Lab, Somerset, NJ.

11:45 AM N7.9
Mg DOPED P-TYPE GaN AND 2D ELECTRON GASES IN GaN, J. Z. Li, Jingyu Y. Lin, Hongxing Jiang, Kansas State Univ, Dept of Physics, Manhattan, KS; M. Asif Khan, Qishen Chen, APA Optics Inc, Blaine, MN; A. Salvador, Univ of Illinois-Urbana, Coordinated Science Lab, Urbana, IL; A. Borchkarev, Univ of Illinois-Urbana, Materials Lab & Coordinated Science Lab, Urbana, IL; H. Morkoc, Univ of Illinois-Urbana, Coordinated Science Lab, Urbana, IL.

SESSION N8: GROWTH ISSUES
Chairs: S. Nakamura and Ferdinand Scholz
Wednesday Afternoon, December 4, 1996
America South (W)
1:30 PM *N8.1
GROWTH OF CUBIC-GaN BY MBE AND ITS PROPERTIES, Sadafumi Yoshida, Electrotechnical Laboratory, Dept of Quantum Materials, Ibaraki, JAPAN; Hajime Okumura, Electrotechnical Laboratory, Quatum Material Section, Ibaraki, JAPAN.

2:00 PM *N8.2
MOVPE GROWTH AND OPTICAL CHARACTERIZATION OF GaPN METASTABLE ALLOY SEMICONDUCTOR, Kentaro Onabe, Univ of Tokyo, Dept of Applied Physics, Tokyo , JAPAN.

2:30 PM N8.3
MOCVD GROWTH OF GaN FILMS ON LATTICE-MATCHED OXIDE SUBSTRATES, Olga Kryliouk, Todd Dann, T. J. Anderson, Univ of Florida, Dept of Chemical Engr, Gainesville, FL; H. Paul Maruska, J. T. Daly, L. D. Zhu, M. E. Lin, P. E. Norris, NZ Applied Technologies, Woburn, MA; Bruce H.T. Chai, Crystal Photonics Inc, Oviedo, FL; David W. Kisker, IBM T.J. Watson Research Ctr, Yorktown Heights, NY.

2:45 PM N8.4
III-V NITRIDES GROWTH BY ATMOSPHERIC PRESSURE MOVPE WITH A THREE LAYERED FLOW CHANNEL, Kazuo Uchida, Hiroki Tokunaga, Nakao Akutsu, Koh Matsumoto, Nippon Sanso Co, Tsukuba Lab, Tsukuba, JAPAN; Tsuyoshi Itoh, Takashi Egawa, Takashi Jimbo, Masayoshi Umeno, Nagoya Inst of Technology, Dept of Electrical & Computer Engr, Aichi, JAPAN.

3:00 PM BREAK

3:30 PM *N8.5
GROWTH OF GaN BY SUBLIMATION TECHNIQUE AND HOMOEPITAXIAL GROWTH BY MOCVD, Shiro Sakai, Tokushima Univ, Dept of Elect & Electronic Engr, Tokushima, JAPAN; Satoshi Kurai, Katsumi Nishino, Koichi Wada, Tokushima Univ, Dept of Electrical & Electronic Engr,; Yoshiki Naoi, Tokushima Univ, Dept of Elect & Electronic Engr, Tokushima, JAPAN.

4:00 PM N8.6
INFLUENCE OF THE CRUCIBLE VOLUME ON THE SIZE AND QUALITY OF PRESSURE-GROWN GaN SINGLE CRYSTALS, Sylwester Porowski, S. Krukowski, M. Bockowski, Izabella Grzegory, High Pressure Research Center, Polish Academy of Sciences, Warsaw, POLAND.

4:15 PM N8.7
GROWTH AND CHARACTERIZATION OF BULK ALUMINUM NITRIDE SINGLE CRYSTALS BY SUBLIMATION, Cengiz M. Balkas, North Carolina State Univ, Dept of M&SE, Raleigh, NC; Zlatko Sitar, Tsvetanka Zheleva, R. F. Davis, North Carolina State Univ, Dept of MS&E, Raleigh, NC.

4:30 PM N8.8
THE GROWTH OF THICK, STRAIN-RELAXED HVPE GaN BUFFER LAYERS ON SAPPHIRE FOR ENHANCED LATERAL CARRIER TRANSPORT, Robert P. Vaudo, Advanced Technology Materials Inc, EPITRONICS, Danbury , CT; Joan M. Redwing, Advanced Technology Materials Inc, Dept of Epitronics, Danbury, CT; Jeffrey S. Flynn, Advanced Technology Materials Inc, Epitronics, Danbury, CT; Michael A. Tischler, Advanced Technology Materials Inc, Dept of Epitronics, Phoenix, AZ.

4:45 PM N8.9
GaN DOTS IN AlGaN CONFINED LAYER STRUCTURES, Satoru Tanaka, RIKEN, Semiconductors Lab, Saitama, JAPAN; Sohachi Iwai, RIKEN, Saitama, JAPAN; Yoshinobu Aoyagi, RIKEN, Semiconductor Lab, Saitama, JAPAN.

SESSION N9: POSTER SESSION: III-V NITRIDES: PHYSICAL PROPERTIES, PROCESSING AND DEVICES
Wednesday Evening, December 4, 1996
8:00 P.M.
America Ballroom (W)
N9.1
OPTICAL SIGNATURES OF THE GaN (10 tex2html_wrap_inline999 0) AND (110) SURFACES *, Cecilia Noguez, UNAM, Estado Solido, Mexico , MEXICO; Sergio E. Ulloa, David A. Drabold, Ohio Univ, Dept of Physics & Astronomy, Athens, OH; Dominic R. Alfonso, International Centre for Theoretical Physics, Condensed Matter Section, Trieste, ITALY; Raul Esquivel-Sirvent, UNAM, Estado Solido, Mexico , MEXICO.

N9.2
STABILITY AND BAND OFFSETS OF SiC/GaN, SiC/AiN, AND AiN/GaN HETEROSTRUCTURES, Jacek A. Majewski, M. Stadele, P. Vogl, Technische Univ Munich, Walter Schottky Inst, Garching, GERMANY.

N9.3
ELECTRONIC BAND STRUCTURES OF III-V NITRIDE SUPERLATTICES: A STUDY OF BN/AlN AND GaN/AlN, Vladimir Gubanov, Carel Boekema, Ed A. Pentaleri, San Jose State Univ, Dept of Physics, San Jose, CA; C. Y. Fong, Univ of California-Davis, Dept of Physics, Davis, CA.

N9.4
VALENCE-BAND OFFSET OF WURTZITE AlN, GaN POLAR INTERFACE, Fabio Bernardini, Vincenzo Fiorentini, Univ di Cagliari, Dept of Physics, Cagliari, ITALY.

N9.5
ATOMIC AND ELECTRONIC STRUCTURES OF THE GaN (100, 110, 111) SURFACES, Jose L.A. Alves, Horacio W.L. Alves, C. Oliveira, R.D.S.C. Valadao, FUNREI, DCNAT, Sao Joao del Rei MG, BRAZIL; J. R. Leite, IFUSP, Sao Paulo, BRAZIL.

N9.6
SHALLOW ACCEPTOR STATES IN WURTZITE AND ZINCBLENDE STRUCTURE GaN, Rongping Wang, P. Paul Ruden, Univ of Minnesota, Dept of Electrical Engr, Minneapolis, MN; Jan Kolnik, Georgia Inst of Technology, School of Electrical & Computer Engr, Atlanta, GA; Ismail Oguzman, Georgia Inst of Technology, School of Electrical & Computer Tech, Atlanta, GA; Kevin F. Brennan, Georgia Inst of Technology, School of Electrical & Computer Engr, Atlanta, GA.

N9.7
STUDY OF TRAPS IN GaN BY THERMALLY STIMULATED CURRENT, Rong Zhang, Univ of Maryland, Dept of Electrical Engr, Baltimore, MD; Youdou Zheng, Dept of Physics, Nanjing, CHINA; J. C. Chen, Univ of Maryland, Dept of Electrical Engr, Baltimore, MD; Zhenchun Huang, NASA Goddard Space Flight Ctr, Greenbelt, MD.

N9.8
STRUCTURE, ELECTRONIC PROPERTIES AND DEFECTS OF GaN USING A SELF-CONSISTENT MOLECULAR DYNAMICS METHOD, Petra Stumm, David A. Drabold, Ohio Univ, Dept of Physics & Astronomy, Athens, OH.

N9.9
THEORY OF GROUP-IV IMPURITIES IN WIDE GAP NITRIDES, Piotr Boguslawski, Inst of Physics, Warsaw, POLAND; Jerzy Bernholc, North Carolina State Univ, Dept of Physics, Raleigh, NC.

N9.10
FIRST PRINCIPLES INVESTIGATION OF THE ELECTRONIC PROPERTIES OF Zn AND Cd IMPURITIES IN WURTZITE GaN, Fabio Bernardini, Vincenzo Fiorentini, Univ di Cagliari, Dept of Physics, Cagliari, ITALY; Risto Nieminen, Helsinki Univ of Technology, Physics Lab, Espoo, FINLAND.

N9.11
THEORETICAL STUDY OF GROUP-III NITRIDE ALLOYS, Kwiseon Kim, Sukit Limpijumnong, Walter R. L. Lambrecht, Benjamin Segall, Case Western Reserve Univ, Dept of Physics, Cleveland, OH.

N9.12
LATTICE-MISMATCH STRAIN RELAXATION IN GaN/AlN/6H-SiC HETEROSTRUCTURES - TEM CHARACTERIZATION AND MODELING, Tsvetanka Zheleva, R. F. Davis, North Carolina State Univ, Dept of MS&E, Raleigh, NC.

N9.13
FIRST MICROSCOPIC OBERSERVATION OF CADMIUM-HYDROGEN PAIRS IN GaN, Manfred Deicher, Angela Burchard, Robert Magerle, Andrea Prospero, Arno Stoetzler, Univ Konstanz, Dept of Physics, Konstanz, GERMANY; Doris Forkel-Wirth, CERN, PPE Div, Geneva, SWITZERLAND; Eugene E. Haller, Lawrence Berkeley National Laboratory, Dept of Material Science, Berkeley, CA.

N9.14
ELASTIC CONSTANTS, DEFORMATION POTENTIALS, AND STACKING-FAULT ENERGIES OF AlN, GaN AND InN, Alan F Wright, Sandia National Laboratories, Albuquerque, NM.

N9.15
STUDIES OF GROUP III NITRIDE GROWTH ON SILICON, Adrian V. Blant, T. S. Cheng, C. Tom Foxon, Univ of Nottingham, Dept of Physics, Nottingham, UNITED KINGDOM.

N9.16
AN AB INITIO MOLECULAR DYNAMICS SIMULATION OF AMORPHOUS GaN, David A. Drabold, Ohio Univ, Dept of Physics & Astronomy, Athens, OH.

N9.17
ANOMALOUS RELAXATIONS AT GaN (10 tex2html_wrap_inline949 0) AND (110) SURFACES, Andrea Bosin, INFM-SISSA, Trieste, ITALY; Giancarlo Cappellini, Univ di Cagliari, Facolta di Medicini, Cagliari, ITALY; Alessio Filippetti, Vincenzo Fiorentini, Univ di Cagliari, Dept of Physics, Cagliari, ITALY; Manuela Menchi, Univ di Cagliari, INFM-Dip Sci Fisiche, Cagliari, ITALY.

N9.18
PULSED EXCIMER LASER PROCESSING OF AlN/GaN THIN FILMS, William S. Wong, Univ of California-Berkeley, Dept of EE&CS, Berkeley, CA; Lawrence F. Schloss, G. S. Sudhir, Univ of California-Berkeley, Dept of Matls Science & Mineral Engr, Berkeley, CA; Kin-Man Yu, Lawrence Berkeley National Laboratory, Materials Science Div, Berkeley, CA; Eicke R. Weber, Univ of California-Berkeley, Dept of Matls Science & Mineral Engr , Berkeley, CA; Timothy D. Sands, Univ of California-Berkeley, Dept of Matls Science & Mineral Engr, Berkeley, CA; Nathan W. Cheung, Univ of California-Berkeley, Dept of EE&CS, Berkeley, CA.

N9.19
CHEMICAL ETCHING OF AlN AND InAlN IN KOH SOLUTIONS, Steve J. Pearton, Cathy B. Vartuli, J. W. Lee, John Devin MacKenzie, Cammy R. Abernathy, Univ of Florida, Dept of MS&E, Gainesville, FL; John C. Zolper, Sandia National Laboratories, Albuquerque, NM; Randy J. Shul, Sandia National Laboratories, Org 1314, Albuquerque, NM; Fan Ren, Bell Labs, Lucent Technologies, Murray Hill, NJ.

N9.20
COMPARISON OF ICI AND IBr FOR DRY ETCHING OF III-NITRIDES, Steve J. Pearton, Cathy B. Vartuli, J. W. Lee, John Devin MacKenzie, Cammy R. Abernathy, Univ of Florida, Dept of MS&E, Gainesville, FL; Randy J. Shul, Sandia National Laboratories, Org 1314, Albuquerque, NM.

N9.21
REACTIVE ION BEAM ETCHING OF GaN GROWN BY MOVPE, Kouji Saotome, Akihiro Matsutani, Tohru Honda, Fumio Koyama, Kenichi Iga, Tokyo Inst of Technology, Precision & Intelligence Lab, Yokohama, JAPAN.

N9.22
PHOTO-ASSISTED ANODIC ETCHING OF GaN GROWN BY MOCVD, Hongoiang Lu, Rensselaer Polytechnic Inst, Troy, NY; Ziming Wu, Ishwara Bhat, Rensselaer Polytechnic Inst, Dept of EC&SE, Troy, NY.

N9.23
PATTERNING OF tex2html_wrap_inline1003 AND tex2html_wrap_inline1005 BY WET AND DRY ETCHING, Steve J. Pearton, J. W. Lee, Cammy R. Abernathy, Univ of Florida, Dept of MS&E, Gainesville, FL; R. G. Wilson, Hughes Research Laboratories, Malibu, CA; B. L. Chai, Univ of Central Florida, CREOL, Orlando, FL; Fan Ren, Bell Labs, Lucent Technologies, Murray Hill, NJ; J. M. Zavada, U.S. Army Research Office, Electronics Div, Research Triangle Pa, NC.

N9.24
PREFERENTIAL CHEMICAL ETCHING OF HEXAGONAL BN COMPARED TO CUBIC BN, Stephen J. Harris, Anita M. Weiner, Gary L. Doll, General Motors, Dept of Phys & Phys Chem, Warren, MI; Wen-Jing Meng, General Motors, R&D Ctr, Warren, MI.

N9.25
ION IMPLANTATION OF EPITAXIAL GaN FILMS; DAMAGE, DOPING AND ACTIVATION, Agajan Suvkhanov, Nalin Parikh, Univ of North Carolina, Dept of Physics & Astronomy, Chapel Hill, NC; Raj Singh, Univ of North Carolina, Dept of Computer Science, Chapel Hill, NC; John Hunn, Oak Ridge National Laboratory, Metals & Ceramic Div, Oak Ridge, TN.

N9.26
EPITAXY OF METAL FILMS ON GaN, Q. Z. Liu, L. Shen, Univ of California-San Diego, Dept of E&CE, La Jolla, CA; S. S. Lau, Univ of California-San Diego, Dept of Electrical & Computer Engr, La Jolla, CA; Edward T. Yu, Univ of California-San Diego, Dept of E&EC, La Jolla, CA ; Thomas F. Kuech, Univ of Wisconsin-Madison, Dept of Chemical Engr, Madison, WI; K. V. Smith, Univ of California-San Diego, Dept of E&CE, La Jolla, CA; N. Perkins, Univ of Wisconsin-Madison, Dept of Chemical Engr, Madison, WI.

N9.27
THERMAL STABILITY OF SCHOTTKY DIODES ON GaN, Jean-Yves Duboz, Thomson CSF, Physics Lab, Orsay, FRANCE; Florence Binet, Thomson CSF, Laboratoire Central de Recherches, Orsay, FRANCE; Ferdinand Scholz, V. Harle, Univ Stuttgart, 4 Physikal Inst, Stuttgart, GERMANY; O. Briot, Univ de Montpellier II, CNRS-GES, Montpellier, FRANCE.

N9.28
COMPARISON OF Ni/Au, Pd/Au, AND Cr/Au METALLIZATIONS FOR OHMIC CONTACTS TO p-GaN, Jeffrey T. Trexler, Univ of Florida, Dept of MS&E, Gainesville, FL; R. F. Karlicek, Emcore Corp, Somerset, NJ; K. R. Evans, Air Force Wright Laboratory, Solid State Electronics Directorate, WPAFB, OH; Paul H. Holloway, Steve J. Pearton, Univ of Florida, Dept of MS&E, Gainesville, FL.

N9.29
INVESTIGATION OF ALUMINUM AND TITANIUM/ALUMINUM CONTACTS TO N-TYPE GALLIUM NITRIDE, Brian P. Luther, Pennsylvania State Univ, Dept of Electrical Engr, University Park, PA; Suzanne E. Mohney, Pennsylvania State Univ, Dept of MS&E, University Park, PA; Thomas N. Jackson, Pennsylvania State Univ, Dept of Electrical Engr, University Park, PA; M. Asif Khan, Qishen Chen, APA Optics Inc, Blaine, MN.

N9.30
OHMIC CONTACTS TO N-GAN USING PT3IN7, Doug B. Ingerly, Univ of Wisconsin-Madison, Dept of Material Science & Engr, Madison, WI.

N9.31
FIELD EMISSION FROM ALUMINUM NITRIDE AND CUBIC BORON NITRIDE COATINGS, G. J. Wojak, W. B. Choi, North Carolina State Univ, Dept of MS&E, Raleigh, NC; V. V. Zhirnov, Inst of Crystallography, Moscow, RUSSIA; A. F. Myers, J. J. Cuomo, J. J. Hren, North Carolina State Univ, Dept of MS&E, Raleigh, NC.

N9.32
FIELD EMISSION FROM WIDE-BAND GAP SEMICONDUCTOR DEVICES, Nicholas M. Miskovsky, Paul H. Cutler, Peter Lerner, Pennsylvania State Univ, University Park, PA.

N9.33
SCHOTTKY DIODES ON N-TYPE GaN: BARRIER HEIGHTS AND IDEALITY FACTORS, Michele T. Hirsch, Lawrence Berkeley National Laboratory, Dept of Materials Science, Berkeley, CA; Eugene E Haller, Kristin J. Duxstad, Eugene E. Haller, Lawrence Berkeley National Laboratory, Dept of Material Science, Berkeley, CA; William R. Imler, Daniel A. Steigerwald, Hewlett Packard Co, Optoelectronics Div, San Jose, CA.

N9.34
NITRIDE BASED THIN FILM COLD CATHODE EMITTERS , James A. Christman, North Carolina State Univ, Dept of Physics, Raleigh, NC; R. F. Davis, North Carolina State Univ, Dept of MS&E, Raleigh, NC; Brandon L. Ward, Robert J Nemanich, Andrew T. Sowers, North Carolina State Univ, Dept of Physics, Raleigh, NC; Michael D. Bremser, North Carolina State Univ, Dept of MS&E, Raleigh, NC.

N9.35
ELECTRON EMISSION FROM COLD CATHODES, Roger Pryor, Wayne State Univ, Inst for Manufacturing Research, Detroit, MI; Lihua Li, Wayne State Univ, Dept of MS&E, Detroit, MI.

N9.36
DEPOSITION AND CHARACTERIZATION OF AlGaN LAYERS FOR SOLAR-BLIND ULTRAVIOLET SENSORS, C. J. Sun, Jinwei Yang, Qishen Chen, M. Z. Anwar, B. Lim, M. Blasingame, M. Asif Khan, APA Optics Inc, Blaine, MN; H. Temkin, Colorado State Univ, Dept of Electrical Engr, Fort Collins, CO; A. Oshinsky, Colorado State Univ, Fort Collins, CO.

N9.37
TUNNEL EFFECTS IN LUMINESCENCE SPECTRA OF InGaN/AlGaN/GaN LIGHT-EMITTING DIODES, Alexander Yunovich, Moscow State Univ, Dept of Physics, Moscow, RUSSIA; V. E. Kudryashov, A. N. Turkin, K. G. Zolina, Moscow State Lomonosov Univ, Moscow, RUSSIA; A. N. Kovalev, F. I. Manyachin, Moscow Inst of Steel & Alloys, Moscow, RUSSIA.

N9.38
OPTICAL AND ELECTRICAL CHARACTERISTICS OF SINGLE-QUANTUM-WELL InGaN LIGHT EMITTING DIODES, Piotr Perlin, Marek Osinski, Univ of New Mexico, Ctr for High Tech Matls, Albuquerque, NM; Petr G. Eliseev, Univ of New Mexico, Ctr for High Technology Materials, Albuquerque, NM.

N9.39
DEGRADATION OF SINGLE-QUANTUM-WELL InGaN GREEN LIGHT EMITTING DIODES UNDER HIGH ELECTRICAL STRESS, Marek Osinski, Piotr Perlin, Univ of New Mexico, Ctr for High Tech Matls, Albuquerque, NM; Petr G. Eliseev, Guangtian Liu, Univ of New Mexico, Ctr for High Technology Materials, Albuquerque, NM; David L. Barton, Sandia National Laboratories, Albuquerque, NM.

N9.40
CARRIER RECOMBINATION DYNAMICS IN InGaN/GaN LEDS AND ITS APPLICATIONS TO THE OPTIMIZATION OF UV GENERATION EFFICIENCY , Yu Kuo Lee, Fow-Sen Paul Choa, Univ of Maryland, Dept of CS&EE, Baltimore, MD; Jyotin P Basrur, Univ of Maryland, Dept of EE&CS, Baltimore, MD.

N9.41
DEGRADATION OF InGaN/AlGaN LED ON SAPPHIRE SUBSTRATE GROWN BY MOCVD, Takashi Egawa, Hiroyasu Ishikawa, Takashi Jimbo, Masayoshi Umeno, Nagoya Inst of Technology, Dept of Electrical & Computer Engr, Aichi , JAPAN.

N9.42
STIMULATED EMISSION AND GAIN MEASUREMENTS FROM InGaN/GaN HETEROSTRUCTURES, Irina K. Shmagin, North Carolina State Univ, Dept of Electrical Computing Engr, Raleigh, NC; S. Krishnankutty, North Carolina State Univ, Dept of Electrical & Computer Engr, Raleigh, NC; R. M. Kolbas, North Carolina State Univ, Dept of Elecrical & Computer Engr, Raleigh, NC; Steven P. DenBaars, Univ of California-S Barbara, Dept of Materials, Santa Barbara, CA; U. K. Mishra, Univ of California-S Barbara, Dept of Electrical & Computer Engr, Santa Barbara, CA; Stacia Keller, Univ of California-S Barbara, Dept of ECE, Santa Barbara, CA; J. F. Muth, North Carolina State Univ, Dept of ECE, Raleigh, NC.

N9.43
HIGH QUALITY PHOTOCONDUCTIVE ULTRAVIOLET GaN/6H-SiC DETECTORS AND ITS PROPERTIES, Kai Yang, Nanjing Univ, Dept of Physics, Nanjing, CHINA; Rong Zhang, Univ of Maryland, Dept of Electrical Engr, Baltimore, MD; B. Shen, H. T. Shi, Y. D. Zheng, Nanjing Univ, Dept of Physics, Nanjing, CHINA; Z. C. Huang, J. C. Chen, Univ of Maryland, Dept of Electrical Engr, Baltimore, MD.

N9.44
MSM GaN UV DETECTORS, Shaohua Liang, Wei Cai, Rutgers Univ, Dept of Electrical & Computer Engr, Piscataway, NJ; Yuxin Li, Emcore Corp, Somerset, NJ; Yicheng Lu, Rutgers Univ, Dept of ECE, Piscataway, NJ; C. A. Tran, Emcore Corp, Dept of R&D, Somerset, NJ; R. F. Karlicek, Emcore Corp, Somerset, NJ; I. Ferguson, Emcore Corp, Dept of R&D, Somerset, NJ; M. Shurman, Emcore Corp, Somerset, NJ.

N9.45
TIME RESPONSE AND CARRIER RELAXATION IN GaN PHOTODETECTORS, Florence Binet, Thomson CSF, Laboratoire Central de Recherches, Orsay, FRANCE; Jean-Yves Duboz, Thomson CSF, Physics Lab, Orsay, FRANCE; V. Harle, Ferdinand Scholz, Univ Stuttgart, 4 Physikal Inst, Stuttgart, GERMANY; O. Briot, Univ de Montpellier II, CNRS-GES, Montpellier, FRANCE.

N9.46
AlN/4H-SIC MIS STRUCTURES PREPARED BY OMVPE DEPOSITION OF AlN, A. Y. Polyakov, Carnegie Mellon Univ, MS&E, Pittsburgh, PA; M. Shin, Marek Skowronski, Carnegie Mellon Univ, Dept of MS&E, Pittsburgh, PA; D. W. Greve, Carnegie Mellon Univ, Dept of Electrical & Computer Engr, Pittsburgh, PA; Mark S. Goorsky, Univ of California-Los Angeles, Dept of MS&E, Los Angeles, CA; A. V. Govorkov, Inst of Rare Metals, Dept of Physics, Moscow, RUSSIA.

N9.47
PHOTOLUMINESCENCE REFLECTANCE AND MAGNETOSPECTROSCOPY OF SHALLOW EXCITONS IN GaN, B. J. Skromme, Arizona State Univ, Dept of Electrical Engr, Tempe, AZ; H. Zhao, Arizona State Univ, Center Solid State Electronics Research, Tempe, AZ; Barb Goldenberg, Honeywell Technology Center, Plymouth, MN; H. S. Kong, M. T. Leonard, G. E. Bulman, Cree Research Inc, Durham, NC; Cammy R. Abernathy, Steve J. Pearton, Univ of Florida, Dept of MS&E, Gainesville, FL.

SESSION N10: THEORY AND PHYSICAL PROPERTIES
Chairs: Bernard Gil and Bruno K. Meyer
Thursday Morning, December 5, 1996
America South (W)
8:30 AM *N10.1
THEORY OF POINT DEFECTS AND INTERFACES, Chris G. Van de Walle, Xerox Palo Alto Research Center, Palo Alto, CA; Jorg Neugebauer, Fritz-Haber-Inst, Abt Theorie, Berlin, GERMANY.

9:00 AM *N10.2
AB INITIO PREDICTION OF IMPURITY LEVELS AND FORMATION ENERGIES OF ACCEPTORS IN WURTZITE GaN, Vincenzo Fiorentini, Fabio Bernardini, Univ di Cagliari, Dept of Physics, Cagliari, ITALY.

9:30 AM N10.3
X-RAY ABSORPTION AND REFLECTION AS PROBES OF THE GaN CONDUCTION BANDS: THEORY AND EXPERIMENT OF THE tex2html_wrap_inline1007 -EDGE AND Ga tex2html_wrap_inline1009 EDGES, Walter R. L. Lambrecht, Case Western Reserve Univ, Dept of Physics, Cleveland, OH; Sergey Rashkeev, Case Western Reserve Univ, Physics,; Benjamin Segall, Case Western Reserve Univ, Dept of Physics, Cleveland, OH; K. Lawniczak-Jablonska, Lawrence Berkeley National Laboratory, Berkeley, CA; T. Suski, Lawrence Berkeley National Laboratory, Material Science Div, Berkeley, CA; E. M. Gullikson, J. H. Underwood, R.C. C. Perera, Lawrence Berkeley National Laboratory, Berkeley, CA; J. Rife, Naval Research Laboratory, Washington, DC.

9:45 AM N10.4
ELECTRONIC STRUCTURE OF BIAXIALLY STRAINED WURTZITE CRYSTALS GaN, AlN, and InN, Jacek A. Majewski, M. Stadele, P. Vogl, Technische Univ Munich, Walter Schottky Inst, Garching, GERMANY.

10:00 AM BREAK

10:30 AM *N10.5
SPONTANEOUS AND STIMULATED RECOMBINATION IN THE NITRIDES, Andreas Hangleiter, Ferdinand Scholz, Volker Haerle, Jin Seo Im, Gerd Frankowsky, Univ Stuttgart, 4 Physikal Inst, Stuttgart, GERMANY.

11:00 AM N10.6
THEORY OF INTERFACES IN WIDE-GAP NITRIDES, Marco Buongiorno Nardelli, Krzysztof Rapcewicz, Jerzy Bernholc, North Carolina State Univ, Dept of Physics, Raleigh, NC.

11:15 AM N10.7
ENERGETICS OF AlN EPITAXIAL WETTING LAYERS ON SiC(0001), Rosa Di Felice, Xerox Palo Alto Research Center, EML, Palo Alto, CA ; J. E. Northrup, Xerox Palo Alto Research Center, Palo Alto, CA; Jorg Neugebauer, Fritz-Haber-Inst, Abt Theorie, Berlin, GERMANY.

11:30 AM N10.8
SURFACE ELECTRONIC STRUCTURE OF GaN(0001), Kevin E. Smith, Sarnjeet S. Dhesi, Cristian Stagarescu, Laurent C. Duda, Boston Univ, Dept of Physics, Boston, MA; Raj Singh, Boston Univ, Dept of ECS, Boston, MA; Theodore D. Moustakas, Boston Univ, Dept of ES&CS, Boston, MA.

11:45 AM N10.9
SURFACE RECONSTRUCTIONS AND III-V STOICHIOMETRY: THE CASE OF CUBIC AND HEXAGONAL GaN, Guy Feuillet, Peter L. Hacke, Electrotechnical Laboratory, Quantum Materials Section, Tsukuba Ibaraki, JAPAN; Hajime Okumura, Electrotechnical Laboratory, Quatum Material Section, Ibaraki, JAPAN; Iroshi Hamaguchi, Electrotechnical Laboratory, Quantum Materials Section, Ibaraki, JAPAN; Kasuo Ohta, Electrotechnical Laboratory, Quantum Material Section, Ibaraki, JAPAN; Sadafumi Yoshida, Electrotechnical Laboratory, Dept of Quantum Materials, Ibaraki, JAPAN.

SESSION N11: PHYSICAL PROPERTIES AND DEFECTS
Chairs: Jacek M. Baranowski and Arto Nurmikko
Thursday Afternoon, December 5, 1996
America South (W)
1:30 PM *N11.1
FREE AND BOUND EXCITONS AND SHALLOW DONORS IN GaN EPITAXIAL FILMS, B. K. Meyer, Justus-Leibig-Univ, Dept of Physics, Giessen, GERMANY.

2:00 PM *N11.2
MAGNETIC RESONANCE STUDIES OF GaN-BASED SINGLE QUANTUM WELL LEDS, W. E. Carlos, Evan R. Glaser, Thomas A. Kennedy, Naval Research Laboratory, Washington, DC; S. Nakamura, Nichia Chemical Industries Ltd, Dept of Research & Development, Tokushima, JAPAN.

2:30 PM N11.3
YELLOW LUMINESCENCE AND ASSOCIATED ODMR IN GaN: A COMPARISON OF DEFECT MODELS, Philip W. Mason, George D. Watkins, Lehigh Univ, Dept of Physics, Bethlehem, PA; Achim Doernen, Univ Stuttgart.

2:45 PM N11.4
MAGNETIC RESONANCE STUDIES OF HIGH-PURITY GaN FILMS GROWN ON Al tex2html_wrap_inline961 O tex2html_wrap_inline969 , Evan R. Glaser, Thomas A. Kennedy, Naval Research Laboratory, Washington, DC; Alma E. Wickenden, Daniel D. Koleske, Naval Research Laboratory, Electronic Science & Tech Div, Washington, DC; Jaime A. Freitas, Sachs & Freeman Associates Inc, Landover, MD.

3:00 PM BREAK

3:30 PM *N11.5
GROWTH, DOPING AND CHARACTERIZATION OF GaN and tex2html_wrap_inline995 ALLOY FILMS, R. F. Davis, Michael D. Bremser, Tsvetanka Zheleva, William G. Perry, North Carolina State Univ, Dept of MS&E, Raleigh, NC.

4:00 PM N11.6
MICROTUBES (PINHOLES) IN GaN, Zuzanna Liliental-Weber, Yong Chen, Sergei Ruvimov, J. Washburn, Lawrence Berkeley National Laboratory, Berkeley, CA.

4:15 PM N11.7
INVERSION DOMAINS IN GaN GROWN ON SAPPHIRE, Linda T. Romano, Xerox Palo Alto Research Center, Electronics Materials Lab, Palo Alto, CA; J. E. Northrup, Xerox Palo Alto Research Center, Palo Alto, CA; M. A. O'Keefe, Lawrence Berkeley National Laboratory, Natl Ctr of Electron Microscopy, Berkeley, CA.

4:30 PM N11.8
TRANSMISSION ELECTRON MICROSCOPY STUDY OF DEFECTS IN NITRIDE-BASED THIN FILMS HETEROSTRUCTURES FORMED ON SAPPHIRE AND SiC, Katharine Dovidenko, Serge Oktyabrsky, R. D. Vispute, Jagdish Narayan, North Carolina State Univ, Dept of MS&E, Raleigh, NC.

4:45 PM N11.9
MORPHOLOGICAL AND STRUCTURAL GROWTH TRANSITIONS IN MOCVD-GROWN GaN FILMS ON SAPPHIRE, Xuehua Wu, P. Fini, Univ of California-S Barbara, Dept of Materials, Santa Barbara, CA; Stacia Keller, Univ of California-S Barbara, Dept of ECE, Santa Barbara, CA; D. Kapolnek, B. Heying, E. J. Tarsa, J. Owen, Steven P. DenBaars, James S. Speck, Univ of California-S Barbara, Dept of Materials, Santa Barbara, CA.

SESSION N12: DEVICES AND PROCESSING
Chairs: M. Kamp and Steve J. Pearton
Friday Morning, December 6, 1996
America South (W)
8:30 AM *N12.1
MOCVD GROWTH OF HIGH QUALITY GaN HETEROSTRUCTURE MATERIALS AND THEIR APPLICATION TO HIGH POWER ELECTRONIC DEVICES, Steven P. DenBaars, Univ of California-S Barbara, Dept of Materials, Santa Barbara, CA; U. K. Mishra, Univ of California-S Barbara, Dept of Electrical & Computer Engr, Santa Barbara, CA; Yi-Feng Wu, Univ of California-S Barbara, Dept of ECE, Santa Barbara, CA; D. Kapolnek, Univ of California-S Barbara, Dept of Materials, Santa Barbara, CA; Peter Kozodoy, Michael Mack, Univ of California-S Barbara, Dept of ECE, Santa Barbara, CA; James S. Speck, Univ of California-S Barbara, Dept of Materials, Santa Barbara, CA; Stacia Keller, Univ of California-S Barbara, Dept of ECE, Santa Barbara, CA.

9:00 AM *N12.2
GaN-BASED FET TECHNOLOGY FOR ELECTRONIC APPLICATIONS, Steven C. Binari, Naval Research Laboratory, Washington, DC.

9:30 AM N12.3
FABRICATION AND ELEVATED TEMPERATURE OPERATION OF GaN-AlGaN DOPED CHANNEL POWER TRANSISTORS, M. Asif Khan, Qishen Chen, Jinwei Yang, C. J. Sun, M. Blasingame, M. Z. Anwar, APA Optics Inc, Blaine, MN; A. Ping, Univ of Illinois-Urbana, Urbana, IL; Ilesami Adesida, Univ of Illinois-Urbana, Dept of ECE, Urbana, IL; M. S. Shur, Univ of Virginia, Charlottesville, VA.

9:45 AM N12.4
VISIBLE BLIND UV GaN PHOTOVOLTAIC DETECTOR ARRAYS GROWN BY RF ATOMIC NITROGEN PLASMA MBE, James M. Van Hove, Peter Chow, Robert Hickman, Andrew Wowchak, Jody Klassen, Christine Polley, SVT Associates Inc, Eden Prairie, MN.

10:00 AM BREAK

10:30 AM *N12.5
CHLORINE-BASED PLASMA ETCHING OF GaN, Randy J. Shul, Sandia National Laboratories, Org 1314, Albuquerque, NM; Cathy B. Vartuli, Steve J. Pearton, Cammy R. Abernathy, Univ of Florida, Dept of MS&E, Gainesville, FL.

11:00 AM N12.6
THERMAL STABILITY OF Pt, Pd, Ni, AND Ti ON GaN, Kristin J. Duxstad, Univ of California-Berkeley, Dept of Materials Science, Berkeley, CA; Eugene E. Haller, Lawrence Berkeley National Laboratory, Dept of Material Science, Berkeley, CA; William R. Imler, Hewlett Packard Co, Optoelectronics Div, San Jose, CA; Linda T. Romano, Xerox Palo Alto Research Center, Electronics Materials Lab, Palo Alto, CA; Kin-Man Yu, Lawrence Berkeley National Laboratory, Materials Science Div, Berkeley, CA; F. A. Ponce, Xerox Palo Alto Research Center, Electronic Materials Lab, Palo Alto, CA; Daniel A. Steigerwald, Hewlett Packard Co, Optoelectronics Div, San Jose, CA.

11:15 AM N12.7
OHMIC CONTACT TO n-GaN WITH TiN DIFFUSION BARRIER, Eliana Kaminska, Anna Piotrowska, Inst of Electron Technology, Technol III-V Semicond, Warsaw, POLAND; Marek Guziewicz, Inst of Electron Technology, Technol III-V Scemicon, Warszawa, POLAND; Slawomir Kasjaniuk, Inst of Electron Technology, Tech III-V Semicond, Warszawa, POLAND; E. Dynowska, Inst of Physics, PAS, Warszawa, POLAND; M. D. Bremser, North Carolina State Univ, Dept of Materials Science, Raleigh, NC; Ok-Hyun Nam, R. F. Davis, North Carolina State Univ, Dept of MS&E, Raleigh, NC.

11:30 AM N12.8
Cr/Ni/Au OHMIC CONTACTS TO THE MODERATELY DOPED p- AND n-GaN, Myung Cheol Yoo, Samsung Advanced Inst of Tech, Photonics Semiconductor Lab, Suwon, SOUTH KOREA; Taek Kim, Tae II Kim, Samsung Advanced Inst of Tech, Materials & Devices Research Ctr, Suwon, KOREA.

11:45 AM N12.9
OBSERVATION OF MID-GAP STATES IN GaN WITH OPTICAL-ISOTHERMAL CAPACITANCE TRANSIENT SPECTROSCOPY, Peter L. Hacke, Electrotechnical Laboratory, Quantum Materials Section, Ibaraki, JAPAN; Hiroki Miyoshi, Electrotechnical Laboratory, Dept of Matls Fundamentals, Ibaraki, JAPAN; Kazumasa Hiramatsu, Nagoya Univ, Dept of Electronics, Nagoya, JAPAN; Hajime Okumura, Electrotechnical Laboratory, Quatum Material Section, Ibaraki, JAPAN; Sadafumi Yoshida, Electrotechnical Laboratory, Dept of Quantum Materials, Ibaraki, JAPAN; Hideyo Okushi, Electrotechnical Laboratory, Dept of Matls Fundamentals, Ibaraki, JAPAN.