MRS Meetings and Events


EL01.04.05 2023 MRS Spring Meeting

Memristor Behavior in Epitaxial Cu2-xSe Thin Films

When and Where

Apr 12, 2023
3:45pm - 4:00pm

Moscone West, Level 3, Room 3001



Becker Sharif1,Toyanath Joshi1,Anh Nguyen1,David Lederman1



Becker Sharif1,Toyanath Joshi1,Anh Nguyen1,David Lederman1

Materials with memristor properties are currently of interest because of their applications in neuromorphic circuitry and resistive switching devices. Memristors are suitable for neuromorphic circuitry due to their low energy consumption, high density, and CMOS compatibility. Additionally, low leakage current and high on-to-off current ratios are essential for efficient devices. Non-stoichiometric copper selenide is a promising material that exhibits the above behavior, where the resistive switching is believed to be attributed to the ionic conductivity of copper ions [1]. We will present the room temperature memory resistive behavior of epitaxially grown Cu<sub>2-x</sub>Se on Al<sub>2</sub>O<sub>3</sub> using Molecular Beam Epitaxy (MBE). The films were characterized using Reflection High Energy Electron Diffraction (RHEED), X-Ray Diffraction (XRD), and Atomic Force Microscopy (AFM). Al interdigitated contacts were used to perform current-voltage (I-V) measurements. The (I-V) measurements showed resistive switching of Cu<sub>2-x</sub>Se at room temperature with over five orders of magnitude of on-off current ratios. <br/> <br/> <br/>Rehman at el. Appl. Phys. 50 (2017) 135301 (8pp)


flux growth

Symposium Organizers

Stefania Privitera, CNR
Carlos Ríos, University of Maryland
Syed Ghazi Sarwat, IBM
Matthias Wuttig, RWTH Aachen University

Publishing Alliance

MRS publishes with Springer Nature