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2011 MRS Fall Meeting & Exhibit

November 28-December 2, 2011 | Boston

Meeting Chairs: Cammy R. Abernathy, Paul V. Braun, Masashi Kawsaki, Kathyn J. Wahl

Symposium O : Compound Semiconductors for Generating, Emitting, and Manipulating Energy

2011-11-29   Show All Abstracts

Symposium Organizers

Tingkai Li Hunan Gongchuang Photovoltaic Science & Technology Co., Ltd.
Michael Mastro U.S. Naval Research Laboratory
Armin Dadgar Otto-von-Guericke-Universitaet Magdeburg
Hongxing Jiang Texas Tech University
Jihyun Kim Korea University
O1: III-Nitride LEDs
Session Chairs
Tingkai Li
Tuesday PM, November 29, 2011
Room 304 (Hynes)

9:00 AM - O1.1
Absence of Electron Accumulation at the InN(11-20) Cleavage Surfaces.

Holger Eisele 1 , Sarah Schaafhausen 2 , Andrea Lenz 1 , Aizhan Sabitova 2 , Lena Ivanova 1 , Mario Daehne 1 , Y. Hong 3 , Shangjr Gwo 3 , Philipp Ebert 2
1 Institut für Festkörperphysik, Technische Universität Berlin, Berlin Germany, 2 Peter Grünberg Institut, Forschungszentrum Jülich, Jülich Germany, 3 Department of Physics, National Tsing Hua University, Hsinchu Taiwan

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9:15 AM - O1.2
Visible-Color-Tunable Light-Emitting Diodes.

Young Joon Hong 2 3 1 , Chul-Ho Lee 2 3 , Gyu-Chul Yi 3 , Aram Yoon 4 , Miyoung Kim 4 , Han-Kyu Seong 5 , Hun Jae Chung 5 , Cheolsoo Sone 5 , Yong Jo Park 5
2 Mateirals Science and Engineering, Pohang University of Science and Technology, Pohang Korea (the Republic of), 3 Physics and Astronomy, Seoul National University, Seoul Korea (the Republic of), 1 Research Center for Integrated Quantum Electronics, Hokkaido University, Sapporo Japan, 4 Materials Science and Engineering, Seoul National University, Seoul Korea (the Republic of), 5 , Samsung LED Co. Ltd., Suwon Korea (the Republic of)

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9:30 AM - O1.3
First Demonstration of InGaN/GaN Based Blue Light Emitting Diodes Grown on 8-Inch Diameter Si (111) Substrates.

Jun-Youn Kim 1 , Hyun-Gi Hong 1 , Yeonhee Kim 1 , Suhee Chae 1 , Youngjo Tak 1 , Jae Kyun Kim 1 , Jae Won Lee 1 , Hyoji Choi 1 , Junghun Park 1 , Bokki Min 1 , Bokki Min 1 , Youngsoo Park 1 , U-In Chung 1
1 , Samsung electronic company, Yongin Korea (the Republic of)

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9:45 AM - O1.4
High-Performance Semipolar (20-2-1) InGaN/GaN Light-Emitting Diodes.

Yuji Zhao 1 , Shinichi Tanaka 2 , Chih-Chien Pan 2 , Chia-Yen Huang 2 , Kenji Fujito 3 , Daniel Feezell 2 , James Speck 2 , Steven DenBaars 1 2 , Shuji Nakamura 1 2
1 ECE, University of California, Santa Barbara, Santa Barbara, California, United States, 2 Materials, University of California, Santa Barbara, Santa Barbara, California, United States, 3 Optoelectronics Laboratory, Mitsubishi Chemical Corporation, Ushiku, Ibaraki, Japan

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10:00 AM - O1.5
Incorporation of Colloidal Metallic Nanocrystals into InGaN/GaN MQWs: Bringing Together Top-down and Bottom-up Approaches in Order to Enhance Light Emission.

Sergio Pereira 1 , M. Martins 1 , T. Trindade 1 , A. Llopis 2 , Arup Neogi 2 , A. Krokhin 2 , Ian Watson 3
1 Physics and Chemistry/CICECO, University of Aveiro, Aveiro Portugal, 2 Physics, University of North Texas, Denton, Texas, United States, 3 Institute of Photonics, University of Strathclyde, Glasgow United Kingdom

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10:15 AM - **O1.6
Reducing the Cost of Ownership: MOCVD Advances for GaN LED’s and AsP CPV Technologies.

Eric Armour 1
1 Turbodisc Division, Veeco Instruments, Somerset, New Jersey, United States

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10:45 AM - *
Break

11:15 AM - O1.7
A Defect-Based Mechanism for Efficiency Droop in Nitride Light Emitting Diodes.

N. Modine 1 , A. Armstrong 1 , M. Crawford 1 , W. Chow 1
1 , Sandia National Laboratories, Albuquerque, New Mexico, United States

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11:30 AM - O1.8
Optimization of the Optical and Electrical Properties of GaN Vertical Light Emitting Diode with Current Block Layer.

Na Lu 1 , Zhiqiang Liu 3 2 , Enqing Guo 2 , Liancheng Wang 2 , Andrew Melton 3 , Ian Ferguson 3
1 Engineering Technology , University of North Carolina at Charlotte, Charlotte , North Carolina, United States, 3 , Chinese Academy of Science , Beijing China, 2 Electrical and Computing Engineering , University of North Carolina at Charlotte , Charlotte , North Carolina, United States

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11:45 AM - O1.9
Fabrication of Large-Area Graphene-Based Transparent Conductive Electrode for UV LEDs.

Byung-Jae Kim 1 , Chongmin Lee 1 , Younghun Jung 1 , Jihyun Kim 1
1 Deprtment of Chemical and Biological Engineering, Korea University, Seoul Korea (the Republic of)

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12:00 PM - O1.10
On the Reverse Leakage Current in GaInN Light-Emitting Diodes.

Qifeng Shan 1 , David Meyaard 2 , Qi Dai 1 , Jaehee Cho 2 , E. Fred Schubert 1 2 , Joong Kon Son 3 , Cheolsoo Sone 3
1 Physics, Applied Physics and Astronomy, Rensselaer Polytechnic Institute, Troy, New York, United States, 2 Electrical, Computer, and System Engineering, Rensselaer Polytechnic Institute, Troy, New York, United States, 3 R&D Institute, Samsung LED, Suwon Korea (the Republic of)

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12:15 PM - O1.11
Growth and Optimization of InGaN/InGaN Multiple Quantum Wells by Metal Organic Vapour Phase Epitaxy.

Hu Liang 1 , Kai Cheng 1 , Liyang Zhang 2 1 , Maarten Leys 1 , Bram Sijmus 1 , Caroline L’abbe 1 , Johan Dekoster 1 , Gustaaf Borghs 1 2
1 , IMEC, Leuven Belgium, 2 Physics and Astronomy, K.U. Leuven, Leuven Belgium

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12:30 PM - O1.12
Characteristics of N-Polar III-Nitride Light Emitting Diodes.

Fatih Akyol 1 , Digbijoy N. Nath 1 , Limei Yang 2 , Pil Sung Park 1 , S. Krishnamoorthy 1 , Michael Mills 2 , Siddharth Rajan 1
1 Electrical and Computer Engineering, Ohio State Univeristy, Columbus, Ohio, United States, 2 Materials Science Engineering, Ohio State University, Columbus, Ohio, United States

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12:45 PM - O1.13
White Emission from InGaN MQWs on c-Planes and Nano Pyramids Hybrid Structure and Color Temperture Control of Hybrid White LED.

Joosung Kim 1 , Moon-Seung Yang 1 , Taek Kim 1 , Youngsoo Park 1 , U-in Chung 1
1 Photo-Electronic Device Group, Samsung Advanced Institute of Technology, Yongin-si, Gyeonggi-do, Korea (the Republic of)

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O2: Optoelectronics
Session Chairs
Eric Armour
Jihyun Kim
Tuesday PM, November 29, 2011
Room 304 (Hynes)

2:30 PM - O2.1
The Research and Development for Collecting, Emitting, and Manipulating Energy

Tingkai Li 1
1 , Hunan Gongchuang Photovoltaic Science & Technology Co., Ltd., Hengyang China

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2:45 PM - **O2.2
Integrated Optoelectronic Devices on Silicon.

John Bowers 1 , Di Liang 1
1 Electrical and Computer Engineering, University of California - Santa Barbara, Santa Barbara, California, United States

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3:15 PM - O2.3
Study on the Self-Organization Mechanism of InGaN Quantum Dot in GaN Nanowires.

Kai Cui 1 , Martin Couillard 2 , Gianluigi Botton 2 , Zetian Mi 1
1 Electrical and Computer Engineering, McGill University, Montreal, Quebec, Canada, 2 The Canadian Centre for Electron Microscopy, McMaster University, Hamilton, Ontario, Canada

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3:30 PM - O2.4
Controlled Tuning of Whispering Gallery Modes of GaN/InGaN Microdisk Cavities.

Igor Aharonovich 1 , Nan Niu 1 , Fabian Rol 1 , Alexander Woolf 1 , Kasey Russell 1 , Haitham El-Ella 2 , Menno Kappers 2 , Rachel Oliver 2 , Evelyn Hu 1
1 School of Engineering and Applied Sciences, Harvard University, Cambridge, Massachusetts, United States, 2 Department of Materials Science and Metallurgy, University of Cambridge, Cambridge United Kingdom

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3:45 PM - *
Break

4:15 PM - O2.5
Zinc Oxide Nanowires on p-GaN for Light Emission.

Caterina Soldano 1 , Camilla Baratto 1 , Elisabetta Comini 1 , Matteo Ferroni 1 , Guido Faglia 1 , Giorgio Sberveglieri 1 , Andre Somers 2 , Andreas Weimar 2
1 Dipartimento di Chimica e Fisica, Univeristà di Brescia, Brescia Italy, 2 , OSRAM Opto Semiconductors GmbH, Regensburg Germany

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4:30 PM - O2.6
High-Performance GaN-Based Light-Emitting Diodes with ZnO Nanorods.

Seon HO Jang 1 , Sei-Min Kim 1 , Jong Sun Lee 1 , Hea-Ryong Lim 1 , Ja Soon Jang 1
1 Electronic Eng.Nanophotonics Lab., Yeungnam Univ. & LED-IT FusionTechnology Research Center(LIFTRC), Gyongsan Korea (the Republic of)

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4:45 PM - O2.7
ZnO/ZnSe Type II Core-Shell Nanowire Array Solar Cell.

Z. Wu 1 , J. Zheng 1 , X. Lin 1 , H. Zhan 1 , S. Li 1 , J. Kang 1 , Yong Zhang 2 3 , J. Bleuse 3 , R. Andre 3 , H. Mariette 3
1 Physics, Xiamen University, Xiamen China, 2 Electrical and Computer Engineering, UNC-Charlotte, Charlotte, North Carolina, United States, 3 NPSC, CEA-CNRS-UJF, Grenoble France

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5:00 PM - O2.8
High Reliable AlCu-Based Ohmic Reflector for GaN-Based Light-Emitting Diodes.

Sei-Min Kim 1 2 , Seon-Ho Jang 1 , Sang-Mook Kim 2 , Jong-Hyeob Baek 2 , Ja-Soon Jang 1
1 , Yeoungnam University and LED-IT Fusion Technology Research Center, Kyeongsan-Si Korea (the Republic of), 2 , Korea Photonics Technology Institute, Gwangju Korea (the Republic of)

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5:15 PM - O2.9
Fabrication of QDs-Polymer Films for Light Emitting Device as Highly Stable QDs by Metal Oxide Treatment on the Surface.

Yun Ku Jung 1 , Yuwon Lee 2 , Gwang-Hei Choi 2 , Jin-Kyu Lee 1
1 Chemistry, Seoul National University, Seoul Korea (the Republic of), 2 LG Components R&D Center, LG Innotek, Ansan Korea (the Republic of)

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5:30 PM - O2.10
Photonic Crystal Modulated IV-VI Semiconductor Mid-IR Light Emitter on Silicon.

Binbin Weng 1 , Lin Li 1 , Jijun Qiu 1 , Zhisheng Shi 1
1 Electrical and Computer Engineering, University of Oklahoma, Norman, Oklahoma, United States

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2011-11-30   Show All Abstracts

Symposium Organizers

Tingkai Li Hunan Gongchuang Photovoltaic Science & Technology Co., Ltd.
Michael Mastro U.S. Naval Research Laboratory
Armin Dadgar Otto-von-Guericke-Universitaet Magdeburg
Hongxing Jiang Texas Tech University
Jihyun Kim Korea University
O3: Solar Harvesting
Session Chairs
Louis Grenet
Matt Sheldon
Wednesday AM, November 30, 2011
Room 304 (Hynes)

9:00 AM - **O3.1
Advances in Heterointegration of III-V/Si Solar Cells.

Steven Ringel 1 , T. Grassman 1 , J. Grandal 1 , A. Carlin 1 , C. Ratcliff 1 , L. Yang 2 , M. Mills 2
1 Department of Electrical and Computer Engineering, The Ohio State University, Columbus, Ohio, United States, 2 Department of Materials Science and Engineering, The Ohio State University, Columbus, Ohio, United States

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9:30 AM - O3.2
Effects of Marcasite and Oxygen Substitution on the Photovoltaic Performance of Pyrite FeS2 from First Principles.

Ruoshi Sun 1 , Maria K. Y. Chan 1 2 , ShinYoung Kang 1 , Gerbrand Ceder 1
1 Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts, United States, 2 Center for Naoscale Materials, Argonne National Laboratory, Argonne, Illinois, United States

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9:45 AM - O3.3
Defects in Cu(In,Ga)Se2 Chalcopyrite Semiconductors: A Comparative Study of Material Properties, Defect States and Photovoltaic Performance.

Qing Cao 1 , Oki Gunawan 1 , Matthew Copel 1 , Kathleen Reuter 1 , Jay Chey 1 , Vaughn Deline 2 , David Mitzi 1
1 , IBM T.J. Watson Research Center, Yorktown Heights, New York, United States, 2 , IBM Almaden Resesarch Center, San Jose, California, United States

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10:00 AM - **O3.4
Nanostructured III-V and Chalcogenide Solar Cells.

Yi Cui 1
1 , Stanford University, Stanford, California, United States

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10:30 AM - O3.5
Transparent Graphene Electrode in CdTe Solar Cells.

Younghun Jung 1 , Seunju Chun 2 , Donghwan Kim 2 , Jihyun Kim 1
1 Department of Chemical and Biological Engineering, Korea University, Seoul Korea (the Republic of), 2 Department of Materials Science and Engineering, Korea University, Seoul Korea (the Republic of)

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10:45 AM - O3.6
CZTS/Se for Thin Films Solar Cells.

Louis Grenet 1 , Sergio Bernardi 1 , Sebastien Noel 1 , Simon Perraud 1
1 , CEA, Grenoble France

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11:00 AM - *
Break

11:30 AM - O3.7
Bulk Crystal Growth of Chalchopyrite Semiconductors of the Zn-Cd-Sn-P System Based on the Phase Diagram.

Takahiro Higashino 1 , Noriyuki Tanaka , Yoshitaro Nose 1 , Kazuaki Toyoura 1 , Tetsuya Uda 1
1 Materials Science and Engineering, Kyoto University, Kyoto Japan

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11:45 AM - O3.8
Tailoring of CdS Nano Films Through CBD-Isochronal Synthesis For PV Applications.

Amanullah Fatehmulla 1 , Abdullah Aldhafiri 1 , Hamad Albrithen 1 2 , Omar Al-Dossari 1 , Adil Hassib 1 , Mohammad Hussein 1 2 , Jalinder Ambekar 3 , Dinesh Amalnerkar 3 , Mohamed Aslam 1
1 Physics and Astronomy, King Saud University, Riyadh-11451 Saudi Arabia, 2 King Abdullah Institute for Nanotechnology, King Saud University, Riyadh -11451 Saudi Arabia, 3 , Centre for Materials for Electronics Technology(C-MET), Pune- 411008 India

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12:00 PM - O3.9
Strain Engineering of III-V Compound Semiconductors for an Optimized Triple Junction Solar Cell.

Marina Leite 1 , Emily Warmann 1 , Gregory Kimball 1 , Harry Atwater 1
1 , CALTECH, Pasadena, California, United States

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12:15 PM - O3.10
PN Junction Formation at the Interface of CdS/CuInxGa(1-x)Se2-based Thin Film Solar Cell.

Soon Mi Park 1 , Yong Duck Chung 2 , Dea-Hyung Cho 2 , Jeha Kim 2 , Kyung Joong Kim 1 , Jeong Won Kim 1
1 , Korea Research Insititute of Standards and Science, Daejon Korea (the Republic of), 2 , Electronics and Telecommunications Research Institute, Daejon Korea (the Republic of)

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12:30 PM - O3.11
Towards `Self-Healing' Solar Cells: Dynamic GaAs Passivation Using Encapsulated Sulfur-Functionalized Surfactants.

Matthew Sheldon 1 , Carissa Eisler 1 , Harry Atwater 1
1 Applied Physics, California Institute of Technology, Pasadena, California, United States

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O4: Transistor Technology
Session Chairs
Wayne Johnson
Fan Ren
Wednesday PM, November 30, 2011
Room 304 (Hynes)

2:30 PM - **O4.1
Advanced Compound Semiconductor Materials Development.

Wayne Johnson 1
1 , Kopin Corporation, Taunton, Massachusetts, United States

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3:00 PM - **O4.2
The Effects of Device Dimension, Substrate Temperature, and Gate Metallization on the Reliability of AlGaN/GaN High Electron Mobility Transistors.

Fan Ren 1 , Stephen Pearton 1 , Lu Liu 1 , Tsung Sheng Kang 1 , Chein Fong Lo 1 , Erica Douglas 1 , Lin Zhou 2 , David Smith 2 , Soohwan Jang 3
1 , Unniversity of Florida, Gainesville, Florida, United States, 2 , Arizona State University, Tempe, Arizona, United States, 3 , Dankook University, Yongin Korea (the Democratic People's Republic of)

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3:30 PM - O4.3
Emission and Detection of Surface Acoustic Waves by AlGaN/GaN HEMTs.

Lei Shao 1 , Meng Zhang 2 , Animesh Banerjee 2 , Pallab Bhattacharya 2 , Kevin Pipe 1 2
1 Mechanical Engineering, University of Michigan, Ann Arbor, Michigan, United States, 2 Electrical Engineering and Computer Science, University of Michigan, Ann Arbor, Michigan, United States

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3:45 PM - O4 Transitor
Break

4:00 PM - O4.