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Symposium EM10 : Emerging Materials and Technologies for Nonvolatile Memories

2016-11-28   Show All Abstracts

Symposium Organizers

Gabriel Molas, CEA-Leti
Guohan Hu, IBM T. J. Watson Research Center
Hyunsang Hwang, Pohang University of Science and Technology
Panagiotis Dimitrakis, National Centre for Scientific Research quot;Demokritosquot;
EM10.1: ReRAM I
Session Chairs
Panagiotis Dimitrakis
Gabriel Molas
Monday AM, November 28, 2016
Hynes, Level 3, Room 304

8:30 AM - *EM10.1.01
Memristors with Diffusive Dynamics as Synaptic Emulator for Neuromorphic Computing

Zhongrui Wang 1 , Saumil Joshi 1 , Sergey Savel Ev 2 , Hao Jiang 1 , Rivu Midya 1 , Peng Lin 1 , Miao Hu 3 , Ning Ge 3 , John Paul Strachan 3 , Zhiyong Li 3 , Qing Wu 4 , Huolin Xin 5 , Stanley Williams 3 , Qiangfei Xia 1 , J. Yang 1

1 Department of Electrical and Computer Engineering University of Massachusetts Amherst United States, 2 Department of Physics Loughborough University Loughborough United Kingdom, 3 Hewlett Packard Laboratories Palo Alto United States, 4 Information Directorate Air Force Research Laboratory Rome United States, 5 Center for Functional Nanomaterials Brookhaven National Laboratory Upton United States

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9:00 AM - EM10.1.02
Non-Volatile Memory Devices from Vanadium Dioxide

Zhen Zhang 1 , Fan Zuo 1 , Helen Park 2 , Thomas Larrabee 3 , S.M. Prokes 4 , Shriram Ramanathan 1

1 School of Materials Engineering Purdue University West Lafayette United States, 2 Naval Research Laboratory Washington United States, 3 Naval Research Laboratory Washington United States, 4 Naval Research Laboratory Washington United States

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9:15 AM - EM10.1.03
Niobium Oxide Memristors for Nanoscale X-Ray Spectromicroscopy Characterization

Noraica Davila 1 , Ziwen Wang 2 , Suhas Kumar 1 , Xiaopeng Huang 1 , Niru Kumari 1 , David Kilcoyne 3 , David Vine 3 , John Paul Strachan 1 , Yoshio Nishi 2 , Stanley Williams 1

1 Hewlett Packard Enterprise Labs Palo Alto United States, 2 Stanford University Palo Alto United States, 3 Lawrence Berkeley National Laboratory Berkeley United States

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9:30 AM - EM10.1.04
Atomic Layer Deposition of Vanadium Oxide Thin Films with Tunable Stoichiometry-Related Properties by Hydrogen Plasma for Nonvolatile Memory Applications

Helen Park 1 2 , Laura Ruppalt 1 , Thomas Larrabee 1 3 , S.M. Prokes 1

1 U.S. Naval Research Laboratory Washington United States, 2 American Society for Engineering Education Washington United States, 3 National Research Council Washington United States

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9:45 AM - EM10.1.05
New Capabilities of hfo 2 and Stacked tio 2-hfo 2 Mem-Impedances

Alain Sylvestre 1 , Tariq Wakrim 1 2 , Christophe Vallee 2 , Patrice Gonon 2

1 Laboratoire de Génie Electrique de Grenoble Grenoble France, 2 Laboratoire des technologies de le Microélectronique Grenoble France

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10:00 AM -
BREAK

10:30 AM - *EM10.1.06
Effects of Moisture and Redox Reactions in VCM and ECM Resistive Switching Memories

Ilia Valov 1 , Michael Lubben 1 , Stefan Tappertzhofen 1 , T. Wiefels 1 , Tohru Tsuruoka 1 , T. Hasegawa 1 , M. Aono 1 , Rainer Waser 1

1 Peter Gruenberg Institut Juelich Germany

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11:00 AM - EM10.1.07
Understanding the Interface Reaction During ALD Deposition of Thin TiO2 Films on RuO2 Layer—Impact on Physical and Electrical Properties of TiO2

Ahmad Chaker 1 , Pierre Szkutnik 1 , John Pointet 1 , Patrice Gonon 1 , Christophe Vallee 1 , Ahmad Bsiesy 1

1 Microelectronics Technology Laboratory Grenoble France

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11:15 AM - EM10.1.08
Conduction Channel Formation and Dissolution by Lateral Oxygen Migration in Metal Oxide Memristors

Ziwen Wang 1 , Xiaopeng Huang 3 , Niru Kumari 3 , Suhas Kumar 3 , Noraica Davila 3 , John Paul Strachan 3 , David Vine 2 , David Kilcoyne 2 , Yoshio Nishi 1 , Stanley Williams 3

1 Stanford University Stanford United States, 3 Hewlett Packard Labs Palo Alto United States, 2 LBNL Berkeley United States

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11:30 AM - EM10.1.09
Combined Conductance Tomography and Raman Spectroscopy Study of Resistance Switching in Silica ReRAM Devices

Mark Buckwell 1 , Konstantin Zarudnyi 1 , Wing Ng 1 , Luca Montesi 1 , Stephen Hudziak 1 , Adnan Mehonic 1 , Anthony Kenyon 1

1 University College London London United Kingdom

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11:45 AM - EM10.1.10
Resolving Conductive Filament Morphology in Crystalline and Amorphous HfO2-Based Programmable Metallization Memory Cells

Timothy Brown 1 , Heidi Clarke 1 , Patrick Shamberger 1

1 Texas Aamp;M University College Station United States

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EM10.2: ReRAM II
Session Chairs
Guohan Hu
Gabriel Molas
Monday PM, November 28, 2016
Hynes, Level 3, Room 304

1:30 PM - EM10.2.01
The Appearance Condition of Quantized Conductance in NiO-Based Resistive Switching Cells

Yusuke Nishi 1 , Hiroki Sasakura 1 , Tsunenobu Kimoto 1

1 Kyoto University Kyoto Japan

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1:45 PM - EM10.2.02
Time-Dependent Impedance Switching in hfo2 Memcapacitors

Tariq Wakrim 1 2 , Patrice Gonon 1 , Christophe Vallee 1 , Alain Sylvestre 2

1 Alpes Laboratoire des technologies de la Microélectronique Grenoble France, 2 Alpes Laboratoire de Génie Electrique de Grenoble Grenoble France

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2:00 PM - EM10.2.03
In Situ TEM Observation of Oxygen Vacancy Driven Structural and Resistive Phase Transitions in Functional Oxide Films

Lide Yao 1 , Sampo Inkinen 1 , Sebastiaan van Dijken 1

1 NanoSpin, Department of Applied Physics, Aalto University School of Science Espoo Finland

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2:15 PM - EM10.2.04
Analysis of the Two-Part SET Switching Process in STO-Based ReRAM

Camilla La Torre 1 , Karsten Fleck 1 , Nabeel Aslam 2 , Susanne Hoffmann-Eifert 2 , Ulrich Boettger 1 , Rainer Waser 1 2 , Stephan Menzel 2

1 Institut für Werkstoffe der Elektrotechnik II, RWTH Aachen University Aachen Germany, 2 Peter Gruenberg Institut 7 Forschungszentrum Juelich Juelich Germany

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2:30 PM -
BREAK

3:00 PM - *EM10.2.05
Operation Mechanism and Novel Functions of Atomic Switches Based on Metal Oxide and Polymer Thin Films

Tohru Tsuruoka 1

1 National Institute for Materials Science Tsukuba Japan

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3:30 PM - EM10.2.06
Studies on Increase in Oxygen Vacancies by Nitrogen Annealing for Improving Interface-Type Bipolar Resistive Switching Endurance in BaTiO3 Thin Film for ReRAM

So Maejima 1 , Toshiyuki Sugie 1 , Kaoru Yamashita 1 , Minoru Noda 1

1 Kyoto Institute of Technology Kyoto Japan

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3:45 PM - EM10.2.07
Catching Resistive Switching Processes by Synchrotron X-Ray Multimodal Imaging

Huajun Liu 1 , Hua Zhou 2 , Yongqi Dong 1 , Liliana Stan 3 , Barry Lai 2 , Zhonghou Cai 2 , Dillon Fong 1

1 Materials Science Division Argonne National Laboratory Lemont United States, 2 Advanced Photon Source Argonne National Laboratory Argonne United States, 3 Center for Nanoscale Materials Argonne National Laboratory Argonne United States

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4:00 PM - EM10.2.08
Graphene/Al2O3/ITO Transparent Resistive Memory Structures

Sita Dugu 1 , Shojan Pavunny 1 , Tej Limbu 1 , Ram Katiyar 1

1 University of Puerto Rico San Juan United States

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4:15 PM - EM10.2.09
Impact of Intrinsic Defects on Polarization Switching Behavior in SrTiO 3

Konstantin Klyukin 1 , Vitaly Alexandrov 1 2

1 Department of Chemical and Biomolecular Engineering University of Nebraska-Lincoln Lincoln United States, 2 Nebraska Center for Materials and Nanoscience University of Nebraska-Lincoln Lincoln United States

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4:30 PM - EM10.2.10
Experimental and Theoretical Studies of Resistive Switching in Grain Boundaries of Polycrystalline Transition Metal Oxide Film

Takumi Moriyama 1 , Sohta Hida 1 , Takahiro Yamasaki 2 , Takahisa Ohno 2 , Satoru Kishida 1 , Kentaro Kinoshita 1

1 Tottori University Tottori Japan, 2 National Institute for Materials Science Ibaraki Japan

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4:45 PM - EM10.2.11
Performance Study of Rad-Hard HfO2-Based 1T1R Devices

Eduardo Perez 1 , Florian Teply 1 , Jens Schmidt 1 , Christian Wenger 1

1 IHP Microelectronics Frankfurt Germany

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EM10.3: Poster Session I: RRAM
Session Chairs
Panagiotis Dimitrakis
Gabriel Molas
Monday PM, November 28, 2016
Hynes, Level 1, Hall B

8:00 PM - EM10.3.01
Ion Beam Etch for Patterning of Resistive RAM (ReRAM) Structures

Narasimhan Srinivasan 1 , Katrina Rook 1 , Binyamin Rubin 1 , Frank Cerio 1 , Ivan Berry 2

1 Veeco Instruments Plainview United States, 2 Lam Research Corporation Fremont United States

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8:00 PM - EM10.3.02
Contact Resistance Study of Metals on Vanadium Dioxide Materials

Bo Hsu 1 , Subhajit Ghosh 1 , Zheng Yang 1

1 University of Illinois at Chicago Chicago United States

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8:00 PM - EM10.3.03
Oxygen “Breathing” in Intrinsic SiOx-Based ReRAM Devices

Luca Montesi 1 , Mark Buckwell 1 , Celeste Anna Maria van den Bosch 2 , Richard Chater 2 , Sarah Fearn 2 , Ainara Aguadero 2 , Adnan Mehonic 1 , Anthony Kenyon 1

1 University College London London United Kingdom, 2 Imperial College London London United Kingdom

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8:00 PM - EM10.3.04
Non-Exponential Resistive Switching in Ag 2S Memristors—A Key to Nanometer-Scale Non-Volatile Memory Devices

Agnes Gubicza 1 , Miklos Csontos 1 , Laszlo Posa 1 , Attila Geresdi 1 , Gyorgy Mihaly 1 , Andras Halbritter 1

1 Department of Physics Budapest University of Technology and Economics Budapest Hungary

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8:00 PM - EM10.3.05
Resistive Switching across Nanoribbons Comprising Single-Crystalline Strontium Titanate Nanocubes

Jiaying Wang 1 , Satyan Choudhary 2 , William Harrigan 3 , Alfred Crosby 2 , Kevin Kittilstved 3 , Stephen Nonnenmann 1

1 Department of Mechanical Engineering University of Massachusetts Amherst United States, 2 Department of Polymer Science and Engineering University of Massachusetts Amherst United States, 3 Department of Chemistry University of Massachusetts Amherst United States

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8:00 PM - EM10.3.06
Resistive Switching Behavior of Organic-Inorganic Hybrid Perovskite Thin Films

Jaeho Choi 1 , Ho Won Jang 1 , Sunghak Park 1 , Ki Tae Nam 1

1 Seoul National University Seoul Korea (the Republic of)

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8:00 PM - EM10.3.07
Synthesis and Study of Magnetic Properties of Hard-Soft SrFe 12-xAl xO 19- x Wt.% Ni 0.5Zn 0.5Fe 2O 4 Nanocomposite Ferrite

Hitesh Adhikari 1 , Madhav Ghimire 1 , Dipesh Neupane 1 , Sanjay Mishra 1

1 University of Memphis Memphis United States

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2016-11-29   Show All Abstracts

Symposium Organizers

Gabriel Molas, CEA-Leti
Guohan Hu, IBM T. J. Watson Research Center
Hyunsang Hwang, Pohang University of Science and Technology
Panagiotis Dimitrakis, National Centre for Scientific Research quot;Demokritosquot;
EM10.4: Flash Technology
Session Chairs
Panagiotis Dimitrakis
Gabriel Molas
Tuesday AM, November 29, 2016
Hynes, Level 3, Room 304

8:30 AM - *EM10.4.01
Single Poly Floating Gate Radiation Sensors in CMOS Technology

Yakov Roizin 1 2 , Evgeny Pikhay 1 2 , Yael Nemirovsky 2

1 TowerJazz Migdal HaEmek Israel, 2 Israel Institute of Technology-Technion Haifa Israel

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9:00 AM - EM10.4.02
Band Structure of Topological Insulators from Noise Measurements in Tunnel Junctions

Juan Pedro Cascales 1 , Isidoro Martinez 2 , Ferhat Katmis 1 , Cui-Zu Chang 1 , Jagadeesh Moodera 1 , Farkhad Aliev 2

1 Massachusetts Institute of Technology Cambridge United States, 2 Universidad Autonoma de Madrid Madrid Spain

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9:15 AM - EM10.4.03
Generation and Control of Spin-Polarized Superconductivity

Jason Robinson 1

1 University of Cambridge Cambridge United Kingdom

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9:30 AM - EM10.4.04
Probing Ultrafast Dynamics of Polar Vortices Using Time Resolved Second Harmonic Generation

Yakun Yuan 1 , Vladimir Stoica 1 , Ramamoorthy Ramesh 2 , Haidan Wen 3 , John Freeland 3

1 The Pennsylvania State University University Park United States, 2 University of California, Berkeley Berkeley United States, 3 Argonne National Laboratory Argonne United States

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9:45 AM - EM10.4.05
Thermal and Electrical Properties of Se Doped GexSb1-x for Phase Change Memory Applications

Jeong Hoon Kim 1 , Jeong Hee Park 1 , Dae-Seop Byeon 1 , Dae-Hong Ko 1

1 Yonsei University Seoul Korea (the Republic of)

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10:00 AM -
BREAK

10:30 AM - *EM10.4.06
SONOS Memories—Advances in Materials and Devices

Krishnaswamy Ramkumar 1 , Venkatraman Prahakar 1 , Ali Keshavarzi 1 , Igor Kouznetsov 1 , Sam Geha 1

1 Cypress Semi Corporation, USA San Jose United States

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11:00 AM - EM10.4.07
Understanding the Effect of Substrate Thermal Conductivity on Threshold Switching Characteristics of Amorphous GeTe 6 Devices

Phoebe Yeoh 1 , Abhishek Sharma 2 , Marek Skowronski 1 , James Bain 2

1 Materials Science and Engineering Carnegie Mellon University Pittsburgh United States, 2 Electrical and Computer Engineering Carnegie Mellon University Pittsburgh United States

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11:15 AM - EM10.4.08
Investigation of Phase Change Memory Confined Cell Endurance Using In Situ Transmission Electron Microscopy (TEM)

Yujun Xie 1 2 3 , Nanbo Gong 5 , Yerin Kim 4 , Yu Zhu 6 , Wanki Kim 6 , SangBum Kim 6 , Matt Brightsky 6 , Tso-Ping Ma 5 , Chung Lam 6 , Judy Cha 1 2 3

1 Department of Mechanical Engineering and Materials Science Yale University New Haven United States, 2 Energy Sciences Institute Yale University New Haven United States, 3 Center for Research on Interface Structures and Phenomena Yale University New Haven United States, 5 Department of Electrical Engineering Yale University New Haven United States, 4 Department of Physics Yale University New Haven United States, 6 IBM T. J. Watson Research Center Yorktown Heights United States

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11:30 AM - EM10.4.09
Mesoscale Modeling of Crystallization via Nucleation and Growth in Phase-Change Memory

Yongwoo Kwon 1 , Youngjae Cho 1 , Min-Kyu Shin 1 , Pil-Ryung Cha 2

1 Hongik University Seoul Korea (the Republic of), 2 Kookmin University Seoul Korea (the Republic of)

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EM10.5: MRAM
Session Chairs
Bernard Dieny
Guohan Hu
Tuesday PM, November 29, 2016
Hynes, Level 3, Room 304

1:30 PM - *EM10.5.01
Second Order Anisotropy Contribution in Perpendicular Magnetic Tunnel Junctions and Associated Benefits for STT-MRAM

Andrey Timopheev 1 2 3 , Ricardo Sousa 1 2 3 , Mairbek Chshiev 1 2 3 , Liliana Buda-Prejbeanu 1 2 3 , Hieu Tan Nguyen 1 2 3 , Bernard Dieny 1 2 3

1 INAC-SPINTEC University of Grenoble Alpes Grenoble France, 2 INAC-SPINTEC CEA Grenoble France, 3 SPINTEC French National Center for Scientific Research Grenoble France

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2:00 PM - EM10.5.02
Enhanced Reliability of Top-Pinned Perpendicular Magnetic Tunnel Junction by Post-Oxidation of Sputtered MgO Barrier

Chikako Yoshida 1 , Hideyuki Noshiro 1 , Yuichi Yamazaki 1 , Toshihiro Sugii 1

1 Fujitsu Limited Atsugi Japan

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2:15 PM - EM10.5.03
Inverse-Magnetostriction-Induced Switching Current Reduction Technique for Spin-Transfer Torque MTJs and Its Low-Power MRAM Applications

Yota Takamura 1 , Yusuke Shuto 2 , Shu'uichiro Yamamoto 2 , Hiroshi Funakubo 3 , Minoru Kurosawa 1 , Shigeki Nakagawa 1 , Satoshi Sugahara 2

1 School of Engineering Tokyo Institute of Technology Tokyo Japan, 2 Laboratory for Future Interdisciplinary Research of Science and Technology Tokyo Institute of Technology Yokohama Japan, 3 School of Materials and Chemistry Tokyo Institute of Technology Yokohama Japan

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3:00 PM - EM10.5.04
In-Plane Ferroelectric Polarization in Epitaxial BaTiO 3 Thin Films for Multiferroic Heterostructures

Katsuyoshi Komatsu 1 , Ippei Suzuki 1 , Takumi Aoki 2 , Yousuke Hamasaki 1 , Mitsuru Itoh 1 , Tomoyasu Taniyama 1

1 Laboratory for Materials and Structures Tokyo Institute of Technology Yokohama Japan, 2 ICT Devices Development Center TDK Corporation Ichikawa Japan

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3:15 PM - EM10.5.05
Ferromagnetism in Co-Substituted BiFeO 3 Thin Films and the Correlation between Ferroelectric and Ferromagnetic Domains

Hajime Hojo 1 , Ryo Kawabe 1 , Hajime Yamamoto 1 , Ko Mibu 2 , Masaki Azuma 1

1 Laboratory for Materials and Structures Tokyo Institute of Technology Yokohama Japan, 2 Graduate School of Engineering Nagoya Institute of Technology Nagoya Japan

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3:30 PM - EM10.5.06
Ultrafast All-Optical Magnetic Switching in Hybrid Magneto-Plasmonic Structures

Feng Cheng 1 , Hui Jia 1 , Xinjun Wang 1 , Satoru Emori 1 , Nian Sun 1 , Yongmin Liu 1

1 Northeastern University Boston United States

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3:45 PM - EM10.5.07
Magnetic and Dynamic Properties of High Quality Nanometre Thick Sputtered Yttrium Iron Garnet Thin Films

Arpita Mitra 1 , Oscar Cespedes 1 , Quentin Ramasse 2 , Bryan Hickey 1

1 University of Leeds LEEDS United Kingdom, 2 superSTEM Dewsbury United Kingdom

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4:00 PM -
OPEN DISCUSSION

4:00 PM -
OPEN DISCUSSION

4:15 PM - EM10.5.09
Fast 180o Magnetization Switching in a Strain-Mediated Multiferroic Heterostructure Driven by a Voltage

Renci Peng 1 2 , Jiamian Hu 2 , Kasra Momeni 2 , Jianjun Wang 2 , Long-Qing Chen 2 1 , Ce-Wen Nan 1

1 Tsinghua University Beijing China, 2 The Pennsylvania State University State College United States

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4:30 PM - EM10.5.10
A Flexoelectric Tailoring of Oxygen Vacancy Distribution in Nanoscale Thin Film

Ye Cao 1 2 , Long-Qing Chen 3 , Sergei Kalinin 1 2

1 Center for Nanophase Materials Sciences Oak Ridge National Laboratory Oak Ridge United States, 2 Institute for Functional Imaging of Materials Oak Ridge National Laboratory Oak Ridge United States, 3 Materials Science and Engineering The Pennsylvania State University University Park United States

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2016-11-30   Show All Abstracts

Symposium Organizers

Gabriel Molas, CEA-Leti
Guohan Hu, IBM T. J. Watson Research Center
Hyunsang Hwang, Pohang University of Science and Technology
Panagiotis Dimitrakis, National Centre for Scientific Research quot;Demokritosquot;
EM10.6: ReRAM III
Session Chairs
Panagiotis Dimitrakis
Gabriel Molas
Wednesday AM, November 30, 2016
Hynes, Level 3, Room 304

8:30 AM - *EM10.6.01
Neuromorphic Computing with Resistive Switching Devices

Dmitri Strukov 1

1 Electrical and Computer Engineering Department University of California Santa Barbara United States

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9:00 AM - EM10.6.02
Multiscale Model for Charge Carrier and Point Defect Transport

Eric Tea 1 , Celine Hin 1

1 Virginia Polytechnic Institute and State University Blacksburg United States

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9:15 AM - EM10.6.03
Resistive Switching in Thin Films of the Pigment Eumelanin in Contact with Different Metal Electrodes under Bias

Eduardo Di Mauro 1 , Xu Ri 1 , Dominic Boisvert 1 , Shiming Zhang 1 , Prajwal Kumar 1 , Fabio Cicoira 1 , Clara Santato 1

1 Polytechnique Montreal Montreal Canada

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9:30 AM - EM10.6.04
Intrinsic Electron and Hole Trapping in Amorphous Oxides

Moloud Kaviani 1 , Jack Strand 2 , Valery Afanas’ev 3 , Alex Shluger 2 1

1 Advanced Institute for Materials Research Tohoku University Sendai Japan, 2 Department of Physics and Astronomy University College London London United Kingdom, 3 Department of Physics University of Leuven Leuven Belgium

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9:45 AM - EM10.6.05
Chalcogenide Material Based Selection Device for 3D Cross-Point Array Structure of ReRAM Cells

Ki-Hyun Kwon 1 , Myung-Jin Song 1 , Dong-Won Kim 1 , Hea-Jee Kim 1 , Soo-Min Jin 1 , Do-Jun Kim 1 , Jea-Gun Park 1

1 Hanyang University Seoul Korea (the Republic of)

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10:00 AM -
BREAK

10:30 AM - *EM10.6.06
Conductive Bridging Random Access Memory and the New Generation of Untethered Devices

Michael Kozicki 1

1 School of Electrical, Computer, and Energy Engineering Arizona State University Tempe United States

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11:00 AM - EM10.6.07
Chemistry, Growth Kinetics and Epitaxial Stabilization of Sn 2+ in Sn-Doped SrTiO 3 Using (CH 3) 6Sn 2 Tin Precursor

Tianqi Wang 1 , Yakun Yuan 2 , Krishna Chaitanya Pitike 3 , Serge Nakhmanson 3 , Venkatraman Gopalan 2 , Bharat Jalan 1

1 Chemical Engineering and Materials Science University of Minnesota Minneapolis United States, 2 Materials Science and Engineering Pennsylvania State University State College United States, 3 Materials Science and Engineering University of Connecticut Storrs United States

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11:15 AM -
OPEN DISCUSSION

11:30 AM - EM10.6.09
Spike-Timing-Dependent-Plasticity in Unipolar SiOx ReRAM Devices

Konstantin Zarudnyi 1 , Mark Buckwell 1 , Luca Montesi 1 , Wing Ng 1 , Stephen Hudziak 1 , Adnan Mehonic 1 , Anthony Kenyon 1

1 EEE University College London London United Kingdom

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11:45 AM - EM10.6.10
High-Precision Tunable Multilevel Al2O3/TiOx Bilayer Memristive Devices Monolithically Integrated on CMOS Substrate for Stand-Alone Memory Applications

Bhaswar Chakrabarti 1 , Miguel Lastras-Montano 1 , Gina Adam 1 , Mirko Prezioso 1 , Brian Hoskins 1 , Andrey Shkabko 1 , Kwang-Ting Cheng 1 , Dmitri Strukov 1

1 University of California, Santa Barbara Santa Barbara United States

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EM10.7: FeRAM
Session Chairs
Panagiotis Dimitrakis
Guohan Hu
Wednesday PM, November 30, 2016
Hynes, Level 3, Room 304

1:30 PM - EM10.7.01
Orientation Controlled HfO2-Based Ferroelectric Films Prepared by Solid Phase Local Epitaxial Technique for High Density Memory Applications

Hiroshi Funakubo 1 , Takahiro Mimura 1 , Takao Shimizu 1 , Kiliha Katayama 1 , Hiroshi Uchida 2 , Takanori Kiguchi 3 , Akihiro Akama 3 , Toyohiko Konno 3 , Osami Sakata 4

1 Tokyo Institute of Technology Yokohama Japan, 2 Sophia University Tokyo Japan, 3 Tohoku University Sendai Japan, 4 National Institute for Materials Science Sayo-cho Japan

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1:45 PM - EM10.7.02
Engineering Un-Doped Hafnium Oxide for Ferroelectricity

Ashish Pal 1 , Stephen Weeks 1 , Vijay Narasimhan 1 , Karl Littau 1 , Dipankar Pramanik 1 , Tony Chiang 1

1 Intermolecular San Jose United States

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2:00 PM - EM10.7.03
Scanning Probe Microscopy Techniques for Ultrafast Probing of Ferroelectric and Multiferroic Materials

Suhas Somnath 1 , Sergei Kalinin 1 , Stephen Jesse 1

1 Oak Ridge National Laboratory Oak Ridge United States

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2:15 PM - EM10.7.04
Capping Layers and Thermal Annealing Effects on Ferroelectric and Antiferroelectric Hf0.5Zr0.5O2 for Transistor Applications

Yuh-Chen Lin 1 , Felicia McGuire 1 , Aaron Franklin 1

1 Duke University Durham United States

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2:30 PM -
BREAK

3:30 PM - EM10.7.05
Ab Initio Study of HfO 2 Thin Films

Mehmet Dogan 1 , Nanbo Gong 1 , Sohrab Ismail-Beigi 1 , Tso-Ping Ma 1

1 Yale University New Haven United States

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3:45 PM - EM10.7.06
Thermodynamic Conditions Favoring Ferroelectricity in Hafnia

Rohit Batra 1 , Huan Tran 1 , Rampi Ramprasad 1

1 University of Connecticut Storrs United States

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4:00 PM - EM10.7.07
Hybrid Multiferroic Patterned Layers with Room-Temperature Magnetic Switching of Electric Polarization

Ronggang Cai 1 , Vlad-Andrei Antohe 1 , Zhijun Hu 2 , Bernard Nysten 1 , Luc Piraux 1 , Alain Jonas 1

1 Université Catholique de Louvain Louvain-la-Neuve Belgium, 2 Soochow University Suzhou China

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4:15 PM - EM10.7.08
Ubiquitous Microwave Conductivity of Ferroelectric Domain Walls

Alexander Tselev 1 , Pu Yu 2 , Ye Cao 1 , Liv Dedon 3 , Lane Martin 3 , Sergei Kalinin 1 , Petro Maksymovych 1

1 Center for Nanophase Materials Sciences Oak Ridge National Laboratory Oak Ridge United States, 2 Department of Physics Tsinghua University Beijing China, 3 Dept Of Mater Sci And Eng University of California, Berkeley Berkeley United States

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4:30 PM - EM10.7.09
Exploring Polarization Rotation Phase Instabilities in BiFeO3 Epitaxial Thin Films and Their Technological Applications

Qian Li 1 , Ye Cao 1 , Pu Yu 2 , Long-Qing Chen 3 , Sergei Kalinin 1 , Nina Balke 1

1 Center for Nanophase Materials Sciences Oak Ridge National Laboratory Oak Ridge United States, 2 Department of Physics Tsinghua University Beijing China, 3 Department of Materials Science and Engineering Pennsylvania State University State College United States

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