Symposium EM04 : Wide- and Ultra-Wide-Bandgap Materials and Devices

2017-11-27   Show All Abstracts

Symposium Organizers

Robert Kaplar, Sandia National Laboratories
Mitsuru Funato, Kyoto University
Matteo Meneghini, University of Padova
Rachael Myers-Ward, U.S. Naval Research Laboratory
EM04.01: III-Nitride Electronics I
Session Chairs
Robert Kaplar
Monday AM, November 27, 2017
Hynes, Level 1, Room 101

8:45 AM - *EM04.01.01
High Voltage GaN on Silicon HEMT Performance and Reliability—Influence of the Epitaxy Material

Alain Charles 1 , Sameh Khalil 1 , Mohamed Imam 1 , Peter Kim 1 , Shyam Hardikar 2 , Florin Udrea 3 , Giorgia Longobardi 3 , Dario Pagnano 3
1 , Infineon Technologies America Corp, El Segundo, California, United States, 2 , Infineon Technologies AG, Regensburg Germany, 3 , University of Cambridge, Cambridge United Kingdom

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9:15 AM - *EM04.01.02
Improved Wet-Etching Processes for GaN-Based Electron Devices

Taketomo Sato 1 , Keisuke Uemura 1 , Tamotsu Hashizume 1
1 Research Center for Integrated Quantum Electronics, Hokkaido University, Sapporo Japan

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9:45 AM - EM04.01.03
Epitaxial Lift-Off from Bulk GaN Wafers for Substrate Reuse and Cost Reduction

Robert McCarthy 1 , Chris Youtsey 1 , Rekha Reddy 1 , Andy Xie 2 , Edward Beam 2 , Jingshan Wang 3 , Patrick Fay 3 , Eric Carlson 4 , Louis Guido 4
1 , MicroLink Devices, Inc., Niles, Illinois, United States, 2 , Qorvo, Richardson, Texas, United States, 3 Department of Electrical Engineering, University of Notre Dame, Notre Dame, Indiana, United States, 4 , Virginia Polytechnic Institute and State University, Blacksburg, Virginia, United States

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10:00 AM -
BREAK

10:30 AM - *EM04.01.04
Dynamic Effects and Failure Mechanisms of Lateral and Vertical Gallium Nitride Power Devices for Switching Applications

Enrico Zanoni 1 , Matteo Meneghini 1 , Gaudenzio Meneghesso 1 , Carlo de Santi 1
1 , University of Padova, Padova Italy

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11:00 AM - *EM04.01.05
Passivation and Gate Dielectrics to Enable High Performance AlGaN/GaN HEMTs with Low Dynamic On-Resistance, High Breakdown Voltage and Enhancement Mode Operation

Andrew Koehler 1 , Travis Anderson 1 , Marko Tadjer 1 , David Shahin 2 , Virginia Wheeler 1 , Karl Hobart 1 , Fritz Kub 1
1 , Naval Research Laboratory, Washington, District of Columbia, United States, 2 , University of Maryland, College Park, College Park, Maryland, United States

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11:30 AM - EM04.01.06
Time-Dependent Dielectric Breakdown of Atomic-Layer-Deposition Al2O3 Films Formed on GaN

Atsushi Hiraiwa 1 2 , Toshio Sasaki 1 , Satoshi Okubo 1 , Hiroshi Kawarada 1
1 , Waseda University, Tokyo Japan, 2 , Nagoya University, Nagoya Japan

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11:45 AM - EM04.01.07
Polarization Engineering toward Normally-Off GaN-Based DHEMTs with nid-GaN Gate Layer

Fouad Benkhelifa 1 , Stefan Müller 1 , Vladimir Polyakov 1 , Lutz Kirste 1 , Oliver Ambacher 2
1 , Fraunhofer IAF, Institute for Applied Solid State Physics, Freiburg Germany, 2 , Department of Microsystems Engineering (IMTEK), Albert Ludwig University, Freiburg Germany

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EM04.02: III-Nitride Electronics II
Session Chairs
Robert Kaplar
Monday PM, November 27, 2017
Hynes, Level 1, Room 101

1:30 PM - *EM04.02.01
Thermal Transport in Wide Bandgap Materials for Power Electronic Applications

Samuel Graham 1
1 , Georgia Institute of Technology, Atlanta, Georgia, United States

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2:00 PM - EM04.02.02
AlGaN/GaN HEMTs on Copper for Enhanced Thermal Performance

Anthony Cibié 1 , Lamine Benaissa 1 , Paul-Henri Haumesser 1 , William Vandendaele 1 , Lea Di Cioccio 1 , Julie Widiez 1
1 , CEA-LETI, Grenoble France

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2:15 PM - EM04.02.03
Thermal Analysis of Castellated GaN High Electron Mobility Transistors

Callum Middleton 1 2 , Filip Gucmann 1 , Stefano Dalcanale 1 , James Pomeroy 1 , Josephine Chang 3 , Justin Parke 3 , Ishan Wathuthanthri 3 , Ken Nagamatsu 3 , Eric Stewart 3 , Shalini Gupta 3 , Robert Howell 3 , Martin Kuball 1
1 , University of Bristol, Bristol United Kingdom, 2 Centre for Doctoral Training in Diamond Science and Technology, EPSRC, Coventry United Kingdom, 3 , Northrop Grumman Mission Systems, Linthicum, Maryland, United States

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2:30 PM - EM04.02.04
Simultaneous Characterization of Local Temperature, Stress, and Electric Field in GaN HEMTs via Micro-Raman Spectroscopy

Kevin Bagnall 1 , Elizabeth Moore 2 3 , Stefan Badescu 2 , Lenan Zhang 1 , Evelyn Wang 1
1 , Massachusetts Institute of Technology, Cambridge, Massachusetts, United States, 2 , Air Force Research Laboratory (AFRL), Wright-Patterson AFB, Ohio, United States, 3 , KBRWyle , Dayton, Ohio, United States

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2:45 PM - EM04.02.05
Analytic Modeling of Nonlinear Current Conduction in Access Regions of III-Nitride HEMTs

Kexin Li 1 , Shaloo Rakheja 1
1 , New York University, Brooklyn, New York, United States

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3:00 PM -
BREAK

3:30 PM - *EM04.02.06
Material Challenges in Approaching Theoretical Limit of GaN Power Devices

Huili Xing 1 , Wenshen Li 1 , Kazuki Nomoto 1 , Mingda Zhu 1 , Kevin Lee 1 , Vladimir Protasenko 1 , SM Islam 1 , Debdeep Jena 1
1 School of Electrical and Computer Engineering, Department of Materials Science and Engineering, Cornell University, Ithaca, New York, United States

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4:00 PM - EM04.02.07
Dynamic Performance and Stability of GaN-on-GaN Vertical Fin-FETs

Matteo Meneghini 1 , M. Ruzzarin 1 , D. Bisi 2 , M. Sun 3 , Tomas Palacios 3 , Gaudenzio Meneghesso 1 , Enrico Zanoni 1
1 , University of Padova, Padova Italy, 2 , Transphorm imc, Padova Italy, 3 , Massachusetts Institute of Technology, Cambridge, Massachusetts, United States

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4:15 PM - EM04.02.08
High Breakdown (>3000 V) Al0.3Ga0.7N PiN Diodes

Jeramy Dickerson 1 , Mary Crawford 1 , Andrew Allerman 1 , Andrew Armstrong 1 , Greg Pickrell 1 , Michael King 1 , Karen Cross 1 , Caleb Glaser 1 , Michael Van Heukelom 1 , Bjorn Sumner 1 , Robert Kaplar 1
1 , Sandia National Labs, Albuquerque, New Mexico, United States

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4:30 PM - EM04.02.09
AlN Metal-Semiconductor Field-Effect Transistors Using Si-Ion Implantation

Hironori Okumura 1 2 , Sami Suihkonen 3 , Jori Lemettinen 3 , Akira Uedono 1 , Tomas Palacios 2
1 , Tsukuba University, Tsukuba Japan, 2 EECS, Massachusetts Institute of Technology, Cambridge, Massachusetts, United States, 3 Department of Electronics and Nano-Engineering, Aalto University, Espoo Finland

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4:45 PM - EM04.02.10
MOCVD-Grown Al0.7Ga0.3N MESFETs with High Current Density

Sanyam Bajaj 1 , Andrew Allerman 2 , Fatih Akyol 1 , Andrew Armstrong 2 , Towhidur Razzak 1 , Yuewei Zhang 1 , Siddharth Rajan 1
1 , The Ohio State University, Columbus, Ohio, United States, 2 , Sandia National Laboratories, Albuquerque, New Mexico, United States

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2017-11-28   Show All Abstracts

Symposium Organizers

Robert Kaplar, Sandia National Laboratories
Mitsuru Funato, Kyoto University
Matteo Meneghini, University of Padova
Rachael Myers-Ward, U.S. Naval Research Laboratory
EM04.03: III-Nitride Optoelectronics I
Session Chairs
Matteo Meneghini
Tuesday AM, November 28, 2017
Hynes, Level 1, Room 101

8:15 AM - *EM04.03.01
Wide Bandgap Semiconductors—The Ubiquitous Material for Todays and Future Solid State Lighting

Martin Strassburg 1 , Marc Patrick Hoffman 1 , Hans-Jürgen Lugauer 1
1 , OSRAM Opto Semiconductors , Regensburg Germany

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8:45 AM - EM04.03.02
Predictive Modeling of BInGaN Alloys Lattice Matched to GaN for Efficient High-Power Visible LEDs

Logan Williams 1 , Emmanouil Kioupakis 1
1 Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan, United States

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9:00 AM - EM04.03.03
Electronic and Optical Properties of Polar InGaN/GaN Quantum Wells—Interplay of Random Alloy Fluctuations, Coulomb Effects and Well Width Fluctuations

Daniel Tanner 1 2 , Joshua McMahon 1 , Stefan Schulz 1
1 , Tyndall National Institute, Cork Ireland, 2 Department of Physics, University College Cork, Cork Ireland

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9:15 AM - EM04.03.04
Effect of KOH Concentrations and Temperatures on Photoluminescence from Top-Down Fabricated InGaN/GaN Nanowires

Matthew Hartensveld 1 , Yu Kee Ooi 2 , Cheng Liu 2 , Jing Zhang 1 2
1 Department of Electrical and Microelectronic Engineering, Rochester Institute of Technology, Rochester, New York, United States, 2 Microsystems Engineering, Rochester Institute of Technology, Rochester, New York, United States

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9:30 AM - EM04.03.05
Influence of Fermi-Level Pinning on Electrical Characteristics of Regularly Arranged GaN Nanocolumns (NCs)

Youhei Nakagawa 1 , Katsumi Kishino 1 2
1 , Sophia University, Chiyodaku, Tokyo, Japan, 2 , Sophia Nanotechnology Research Center, Chiyodaku, Tokyo, Japan

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9:45 AM - EM04.03.06
Low Resistive GaN Tunnel Junctions Grown by MOVPE

Ryota Fuwa 1 , Yasuto Akatsuka 1 , Tetsuya Takeuchi 1 , Motoaki Iwaya 1 2 , Satoshi Kamiyama 1 , Isamu Akasaki 1 2
1 , Meijo University, Nagoya-shi Japan, 2 Graduate School of Engineering, Akasaki Research Center, Nagoya Japan

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10:00 AM -
BREAK

10:30 AM - *EM04.03.07
Alternative Hole Injections in Nitride-Based Light Emitting Devices

Tetsuya Takeuchi 1 , Satoshi Kamiyama 1 , Motoaki Iwaya 1 , Isamu Akasaki 1 2
1 , Meijo University, Nagoya Japan, 2 , Nagoya University, Nagoya Japan

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11:00 AM - *EM04.03.08
3D GaN Architectures—From Core-Shell MicroLEDs to Vertical Electronics

Andreas Waag 2 1 , Jana Hartmann 2 , Hao Zhou 2 , Hendrik Spende 1 , Johannes Ledig 4 , Sönke Fündling 2 , Hergo-Heinrich Wehmann 2 , Frederik Steib 2 , Klaas Strempel 2 , Muhammad Fahlesa Fatahilah 1 , Hutomo Wasisto 1 , Marcus Muller 3 , Peter Veit 3 , Frank Bertram 3 , Juergen Christen 3 , Tilman Schimpke 5 , Martin Mandl 5 , Adrian Avramescu 5 , Ion Stoll 5 , Martin Strassburg 5 , Hans-Jürgen Lugauer 5
2 Braunschweig University of Technology, Epitaxy Competence Center, Braunschweig Germany, 1 Braunschweig University of Technology, Laboratory for Emerging Nanometrology, Braunschweig Germany, 4 , Physikalisch-Technische Bundesanstalt, Braunschweig Germany, 3 , Otto von Guericke Universität, Magdeburg Germany, 5 , Osram Opto Semiconductors GmbH, Regensburg Germany

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11:30 AM - EM04.03.09
Auger Recombination in Group-III Nitrides from First Principles

Andrew McAllister 1 , Dylan Bayerl 1 , Emmanouil Kioupakis 1
1 , Univ of Michigan, Ann Arbor, Michigan, United States

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11:45 AM - EM04.03.10
Insight into Multiple Quantum Wells of GaN-Based Blue LED Using Aberration-Corrected Electron Microscopy

Mansoor Ali Khan 1 2 3 , Rongkun Zheng 1 2 3
1 School of Physics, The University of Sydney, Sydney, New South Wales, Australia, 2 Australian Centre for Microscopy & Microanalysis (ACMM), The University of Sydney, Sydney, New South Wales, Australia, 3 Australian Institute for Nanoscale Science and Technology (AINST), The University of Sydney, Sydney, New South Wales, Australia

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EM04.04: III-Nitride Optoelectronics II
Session Chairs
Matteo Meneghini
Tuesday PM, November 28, 2017
Hynes, Level 1, Room 101

2:00 PM - EM04.04.01
Stealthy Hyperuniform Disordered Structure for III-N Random Laser Applications

Ronghui Lin 1 , Haiding Sun 1 , XiaoHang Li 1
1 Computer, Electrical and Mathematical Science and Engineering (CEMSE) Division, King Abdullah University of Science and Technology, Thuwal Saudi Arabia

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2:15 PM - EM04.04.02
Cathodoluminescence as an Effective Probe of Carrier Transport and Deep Level Defects in InGaN/GaN Quantum Well Heterostructures

Zhibo Zhao 1 , Akshay Singh 1 , Jordan Chesin 1 , Rob Armitage 2 , Isaac Wildeson 2 , Parijat Deb 2 , Andrew Armstrong 3 , Kim Kisslinger 4 , Eric Stach 4 , Silvija Gradecak 1
1 , Massachusetts Institute of Technology, Cambridge, Massachusetts, United States, 2 , Lumileds, San Jose, California, United States, 3 , Sandia National Laboratories, Albuquerque, New Mexico, United States, 4 Center for Functional Nanomaterials, Brookhaven National Laboratory, Upton, New York, United States

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2:30 PM - EM04.04.03
Recombination Dynamics in 3D InGaN/GaN Microrod and Fin Heterostructures

Angelina Vogt 1 , Jana Hartmann 1 2 , Hao Zhou 1 , Felix Blumenröther 1 , Sönke Fündling 1 2 , Hergo-Heinrich Wehmann 1 2 , Andreas Waag 1 2 , Tobias Voss 1
1 Institute of Semiconductor Technology and Laboratory for Emerging Nanometrology LENA, TU Braunschweig, Braunschweig Germany, 2 Epitaxy Competence Center ec2, TU Braunschweig, Braunschweig Germany

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2:45 PM - EM04.04.04
Ab Initio Charge Carrier Dynamics in Gallium Nitride and Impact on Efficiency Droop

Vatsal Jhalani 1 , Jin-Jian Zhou 1 , Marco Bernardi 1
1 , California Institute of Technology, Pasadena, California, United States

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3:00 PM -
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3:30 PM - *EM04.04.05
Consideration of Shockley-Read-Hall Nonradiative Recombination Centers in Wide Bandgap (Al,Ga)N and ZnO

Shigefusa Chichibu 1 2 , Kazunobu Kojima 1 , Kohei Shima 1 , Akira Uedono 3 , Shoji Ishibashi 4
1 , Tohoku University, Sendai Japan, 2 IMaSS, Nagoya University, Nagoya, Aichi, Japan, 3 IAP, University of Tsukuba, Tsukuba, Ibaraki, Japan, 4 , AIST, Tsukuba, Ibaraki, Japan

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4:00 PM - EM04.04.06
High Performance AlGaN/AlGaN Based Solar-Blind MSM Type Photosensor

Akira Yoshikawa 1 2 , Saki Ushida 1 , Motoaki Iwaya 1 , Tetsuya Takeuchi 1 , Satoshi Kamiyama 1 , Isamu Akasaki 1 3
1 , Meijo University, Shizuoka Japan, 2 , Asahi-Kasei Corporation, Fuji Japan, 3 , Akasaki Research Center, Nagoya Japan

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4:15 PM - EM04.04.07
Band Alignment of BAlN/AlGaN Heterojunction for Ultraviolet Emitter Applications

Haiding Sun 1 , Young Jae Park 2 , Theeradetch Detchprohm 2 , Russell Dupuis 2 , XiaoHang Li 1
1 , King Abdullah University of Science and Technology, Thuwal Saudi Arabia, 2 , Georgia Institute of Technology, Atlanta, Georgia, United States

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4:30 PM - EM04.04.08
Optimization of Carrier Concentration and the Electrode for AlGaN/AlGaN Based Solar-Blind Photosensor

Saki Ushida 1 , Akira Yoshikawa 1 2 , Motoaki Iwaya 1 , Tetsuya Takeuchi 1 , Satoshi Kamiyama 1 , Isamu Akasaki 1 3
1 , Meijo University, Nagoya City Aichi Japan, 2 , Asahi-Kasei Corporation, Fuji Japan, 3 , Akasaki Research Center, Nagoya University, Nagoya Japan

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4:45 PM - EM04.04.09
GaN-AlGaN Excitonic Bragg Structures

Vladimir Chaldyshev 1 , Andrey Bolshakov 1 , Evgeny Zavarin 1 , Maria Yagovkina 1 , Wsevolod Lundin 1 , Alexey Sakharov 1 , Andrey Tsatsulnikov 1
1 , Ioffe Institute, Saint Petersburg Russian Federation

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2017-11-29   Show All Abstracts

Symposium Organizers

Robert Kaplar, Sandia National Laboratories
Mitsuru Funato, Kyoto University
Matteo Meneghini, University of Padova
Rachael Myers-Ward, U.S. Naval Research Laboratory
EM04.05: Doping and Defects
Session Chairs
Robert Kaplar
Wednesday AM, November 29, 2017
Hynes, Level 1, Room 101

8:15 AM - *EM04.05.01
Compensation Mechanism in AlN and AlGaN

Douglas Irving 1 , Joshua Harris 1 , Kelsey Mirrielees 1 , Jonathon Baker 1 , Brian Behrhorst 1 , Isaac Bryan 1 , Dorian Alden 1 , Ronny Kirste 2 , James Tweedie 2 , Preston Bowes 1 , Ramon Collazo 1 , Zlatko Sitar 1
1 , North Carolina State University, Raleigh, North Carolina, United States, 2 , Adroit Materials, Cary, North Carolina, United States

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8:45 AM - EM04.05.02
A Comprehensive Analysis of the Formation Energies, Thermal and Optical Ionisation Energies and Equilibrium Concentrations of Native Defects in GaN

John Buckeridge 1 , Zijuan Xie 1 , C. Richard Catlow 1 , Alexey Sokol 1
1 , University College London, London United Kingdom

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9:00 AM - EM04.05.03
First Principles Calculations of Threading Screw Dislocation Properties in III-Nitride Compounds

Laurent Pizzagalli 1 , Imad Belabbas 2
1 , P' Institute, Chasseneuil France, 2 , Université de Bejaia, Bejaia Algeria

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9:15 AM - EM04.05.04
Structural, Morphological, Optical and Electrical Properties of the Bulk (0001) GaN:Fe Wafers

Matthew Gaddy 1 , Vladimir Kuryatkov 1 , Vincent Meyers 1 , Daniel Mauch 1 , James Dickens 1 , Andreas Neuber 1 , Sergey Nikishin 1
1 Department of Electrical and Computer Engineering, Texas Tech, Lubbock, Texas, United States

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9:30 AM - EM04.05.05
Room Temperature Ferromagnetism in Gadolinium-Doped Gallium Nitride

Vishal Saravade 1 , Cameron Ferguson 1 , Amirhossein Ghods 1 , Chuanle Zhou 1 , Ian Ferguson 1
1 Department of Electrical and Computer Engineering, Missouri University of Science and Technology, Rolla, Missouri, United States

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9:45 AM - EM04.05.06
Radiation-Induced Alloy Rearrangement in InxGa1-xN

Filip Tuomisto 1 , Vera Prozheeva 1 , Ilja Makkonen 1 , Ramon Cusco 2 , Luis Artus 2 , Armin Dadgar 3 , Fernando Plazaola 4
1 , Aalto University, Aalto Finland, 2 , Institut Jaume Almera (ICTJA-CSIC), Barcelona Spain, 3 , Otto-von-Guericke Unversity, Magdeburg Germany, 4 , Euskal Herriko Unibertsitatea, Bilbao Spain

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10:00 AM -
BREAK

10:30 AM - *EM04.05.07
Functionalization of Silicon Carbide by Particle Irradiation toward Quantum Devices

Takeshi Ohshima 1 , Tomoya Honda 1 2 , Hiroki Tsunemi 1 2 , Takahiro Makino 1 , Shin-ichiro Sato 1 , Shinobu Onoda 1 , Yasuto Hijikata 2
1 , National Institutes for Quantum and Radiological Science and Technology, Takasaki Japan, 2 , Saitama University, Urawa Japan

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11:00 AM - EM04.05.08
The SiO2/4H-SiC Interface—Physical Stress, Material Density and Carbon Retention

Xiuyan Li 1 , Sang Soo Lee 2 , Ryan Thorpe 1 , Alexei Ermakov 1 , Voshadhi Amarasinghe 1 , Jonnathan Medina Ramos 2 , Eric Garfunkel 1 , Torgny Gustafsson 1 , Paul Fenter 2 , Leonard Feldman 1
1 Institute for Advanced Materials, Devices and Nanotechnology, Rutgers, The State University of New Jersey, Piscataway, New Jersey, United States, 2 Chemical Science and Engineering Division, Argonne National Laboratory, Argonne, Illinois, United States

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11:15 AM - EM04.05.09
Quantitative Imaging of SiO2/SiC Interface Trap Density Using Local Deep Level Transient Spectroscopy

Norimichi Chinone 1 , Ryoji Kosugi 2 , Yasunori Tanaka 2 , Shinsuke Harada 2 , Hajime Okumura 2 , Yasuo Cho 1
1 , Tohoku University, Sendai Japan, 2 , National Institute of Advanced Industrial Science and Technology, Tsukuba Japan

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11:30 AM - EM04.05.10
Electronics Structure of Oxygen and Aluminum Vacancies in Amorphous Al2O3

Eiji Kojima 1 , Kenta Chokawa 1 , Hiroki Shirakawa 1 , Masaaki Araidai 1 2 , Kenji Shiraishi 1 2
1 , Nagoya University, Nagoya Japan, 2 , Materials and Systems for Sustainability, Nagoya, Aichi, Japan

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11:45 AM - EM04.05.11
Electrical Compensation in Ga2O3

Filip Tuomisto 1 , Vera Prozheeva 1 , Kenichiro Mizohata 3 , Jyrki Räisänen 3 , Michele Baldini 2 , Guenter Wagner 2
1 , Aalto University, Aalto Finland, 3 , University of Helsinki, Helsinki Finland, 2 , Leibniz Institute for Crystal Growth, Berlin Germany

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EM04.06: Ultra-violet Optoelectronics
Session Chairs
Mitsuru Funato
Wednesday PM, November 29, 2017
Hynes, Level 1, Room 101

1:30 PM - *EM04.06.01
Two-Inch Aluminum Nitride (AlN) Single Crystal Growth for Commercial Applications

Leo Schowalter 1 , Robert Bondokov 1 , Jianfeng Chen 1 , Murugesu Yoganathan 1 , Takashi Suzuki 1 2 , Shailaja Rao 1 , Toru Kimura 1 2 , Keisuke Yamaoka 1 2
1 , Crystal IS, Green Island, New York, United States, 2 , Asahi Kasei, Fuji, Shizuoka, Japan

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2:00 PM - EM04.06.02
Structure Optimization for Enhanced Light Extraction Efficiency of Deep Ultraviolet Nanowire Light Emitting Diode

Ronghui Lin 1 , Haiding Sun 1 , Sergio Valdes Galan 1 , Yangrui Hu 1 , XiaoHang Li 1
1 , King Abdullah University of Science and Technology, Saudia Arabia (KAUST), Thuwal Saudi Arabia

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2:15 PM - EM04.06.03
Development of Cesium-Free III-Nitride Photocathodes Based on Control of Polarization Charge

Douglas Bell 1 , Emma Rocco 2 , Jonathan Marini 2 , Shouleh Nikzad 1 , Fatemeh Shahedipour-Sandvik 2
1 Jet Propulsion Laboratory, California Institute of Technology, Pasadena, California, United States, 2 Colleges of Nanoscale Science and Engineering, SUNY Polytechnic Institute, Albany, New York, United States

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2:30 PM -
BREAK

3:30 PM - EM04.06.04
Growth and Characterization of GaN p-i-p-i-n Ultraviolet Separate Absorption and Gain Avalanche Photodiodes and Arrays

Russell Dupuis 1 , Mi-Hee Ji 1 , Bill Chaiyasarikul 1 , Hongmo Li 1 , Jeomoh Kim 2 , Theeradetch Detchprohm 1 , Shyh-Chiang Shen 1 , Ashok Sood 3 , Nabir Dhar 4 , Sachidananda Babu 5
1 School of ECE, Georgia Institute of Technology, Atlanta, Georgia, United States, 2 Materials and Devices Advanced Research Institute, LG Electronics, Seoul Korea (the Republic of), 3 , Magnolia Optical Technologies, Woburn, Massachusetts, United States, 4 , US Army Night Vision & Electronic Sensors Directorate, Fort Belvoir, Virginia, United States, 5 Earth Science Technology Office, NASA, Greenbelt, Maryland, United States

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3:45 PM - EM04.06.05
Highly Reflective AlGaN Based Distributed Bragg Reflectors Grown by Metalorganic Chemical Vapor Deposition

Theeradetch Detchprohm 1 , Karan Mehta 1 , Yuh-Shiuan Liu 1 , Shuo Wang 2 , Shanthan Alugubelli 2 , Young Jae Park 1 , Oliver Moreno 1 , Shyh-Chiang Shen 1 , Paul Yoder 1 , Fernando Ponce 2 , Russell Dupuis 1
1 , Georgia Institute of Technology, Atlanta, Georgia, United States, 2 Physics, Arizona State University, Tempe, Arizona, United States

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4:00 PM - EM04.06.06
Systematic Study on Persistent Photoconductivity in AlxGa1–xN UV Photodetector

Yiming Zhao 1 2 , William Donaldson 1
1 , Laboratory for Laser Energetics, Rochester, New York, United States, 2 Materials Science, University of Rochester, Rochester, New York, United States

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4:15 PM - EM04.06.07
UV Light Absorbing and Emitting Diodes Consisting of a P-Type NiO Film Deposited on an N-Type GaN Homoepitaxial Epilayer

Zehua Wang 1 , Hiroshi Nakai 1 , Mutsumi Sugiyama 1 , Shigefusa Chichibu 2
1 , Tokyo University of Science, Noda Japan, 2 , Tohoku University, Sendai Japan

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4:30 PM - EM04.06.08
Impact of Device Architecture and Active Layer Morphology on Organic Ultraviolet Photodetector Performance

Monica Esopi 1 , Qiuming Yu 1
1 , University of Washington, Seattle, Washington, United States

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4:45 PM - EM04.06.09
Towards Two-Dimensional Oxides for Optoelectronic Applications

Jonathan Rackham 1 , Bin Zou 1 , Kevin Kahn 1 3 , Timothy Pennycook 4 , Michelle Moram 2 1
1 , Imperial College London, London United Kingdom, 3 Department of Physics, National University of Singapore, Singapore Singapore, 4 Department of Physics, University of Vienna, Vienna Austria, 2 Cavendish Laboratory, University of Cambridge, Cambridge United Kingdom

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2017-11-30   Show All Abstracts

Symposium Organizers

Robert Kaplar, Sandia National Laboratories
Mitsuru Funato, Kyoto University
Matteo Meneghini, University of Padova
Rachael Myers-Ward, U.S. Naval Research Laboratory
EM04.07: Materials Growth and Characterization
Session Chairs
Mitsuru Funato
Thursday AM, November 30, 2017
Hynes, Level 1, Room 101

8:15 AM - *EM04.07.01
Investigation of Epitaxially Grown AlB(Ga)N Layers on AlN Templates

Ferdinand Scholz 1 , Oliver Rettig 1 , Marketa Zikova 1 2 , Tomas Hubacek 1 2 , Jan-Patrick Scholz 3 , Natja Steiger 3 , Sebastian Bauer 3 , Klaus Thonke 3 , Yueliang Li 4 , Haoyuan Qi 4 , Ute Kaiser 4
1 Institute of Optoelectronics, Ulm University, Ulm Germany, 2 Institute of Physics, Czech Academy of Science, Prague Czechia, 3 Institute of Quantum Matter, Ulm University, Ulm Germany, 4 Central Facility of Electron Microscopy, Ulm University, Ulm Germany

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8:45 AM - EM04.07.02
Growth of Non-Polar GaN Thin Films on Glass Substrates by Conventional RF Sputtering Using a High Quality Polycrystalline GaN Target

Marolop Simanullang 1 , Nao Kawakami 1 , Zehua Wang 1 , Ryo Tanuma 1 , Yusuke Ohteki 1 , Takehiro Yoshida 2 , Mutsumi Sugiyama 1
1 , Tokyo University of Science, Noda Japan, 2 , SCIOCS Co. Ltd., Hitachi-shi, Ibaraki, Japan

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9:00 AM - EM04.07.03
Polarity Issues in the Growth of III-Nitrides on Sapphire Stuided by Tranmission Elctron Microscopy

Martin Albrecht 1 , Natalia Stolyarchuk 1 2 , Stefan Mohn 1 , Toni Markurt 1 , Ronny Kirste 3 , Ramon Collazo 3 , Aimeric Courville 2 , Rosa Di Felice 4 , Katia March 5 , Zlatko Sitar 3 , Philippe Vennegues 2
1 , Leibniz Institut fuer Kristallzuechtung, Berlin Germany, 2 , CHREA-CNRS, Valbonne France, 3 , North Carolina State University, Raleigh, North Carolina, United States, 4 , CNRNano, Modena Italy, 5 , LPS, Orsay France

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9:15 AM - EM04.07.04
Study on Growth Condition of 3D Nanowire/GaInN-Based Multi-Quantum Shell Active Layer

Kyohei Nokimura 1 , Myunghee KIM 1 , Atsushi Suzuki 1 , Yuki Kurisaki 1 , Minoru Takebayashi 1 , Hiroki Shibuya 1 , Kohei Sasai 1 , Satoshi Kamiyama 1 , Tetsuya Takeuchi 1 , Motoaki Iwaya 1 , Isamu Akasaki 1 2
1 , Meijo University, Nagoya Japan, 2 , Akasaki Research Center, Nagoya University, Nagoya Japan

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9:30 AM - EM04.07.05
Understanding the Formation of Regularly Distributed Flower-Shaped Cathodoluminescence Patterns in GaN Self-Assembled Microdisks and Microwires Grown on Sapphire

Bijun Zhao 1 , Philippe Caroff 1 , Naiyin Wang 1 , Mark Lockrey 2 , Li Li 2 , Jennifer Wong-Leung 1 , Hoe Tan 1 , Chennupati Jagadish 1
1 Department of Electronic Materials Engineering, Research School of Physics and Engineering, The Australian National University, Canberra, Australian Capital Territory, Australia, 2 Australian National Fabrication Facility, Research School of Physics and Engineering, The Australian National University, Canberra, Australian Capital Territory, Australia

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9:45 AM - EM04.07.06
Elastically Frustrated Rehybridization—Origin of the Strong Compositional Growth Limits in Epitaxial InGaN Films

Liverios Lymperakis 1 , Christoph Freysoldt 1 , Tobias Schulz 2 , Martin Albrecht 2 , Joerg Neugebauer 1
1 , Max-Planck-Institut für Eisenforschung GmbH, Düsseldorf Germany, 2 , Leibniz-Institute for Crystal Growth, Berlin Germany

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10:00 AM -
BREAK

10:30 AM - *EM04.07.07
Flexible Metallic Foil and Graphene as Substrates for the Self-Assembled Growth of GaN Nanowires

Lutz Geelhaar 1
1 , Paul-Drude-Institut für Festkörperelektronik, Berlin Germany

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11:00 AM -
DISCUSSION TIME

11:15 AM - EM04.07.09
Epitaxial GaN Based Devices on Metal Foil Substrates

Vladimir Matias 1 , Chris Sheehan 1 , Daniel Koleske 2
1 , iBeam Materials, Santa Fe, New Mexico, United States, 2 , Sandia National Laboratories, Albuquerque, New Mexico, United States

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11:30 AM - EM04.07.10
Probing Surface Band Bending of Polar GaN by Hard X-Ray Photoemission Combined with X-Ray Total Reflection

Shigenori Ueda 1
1 , National Institute for Materials Science, Hyogo Japan

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11:45 AM - EM04.07.11
Wide-Bandgap Photoconductive Variable Resistor for Single-Standard Electrical Calibrations

Jasper Drisko 1 , Josue Davila-Rodriguez 1 , James Booth 1 , Ari Feldman 1 , Franklyn Quinlan 1 , Nathan Orloff 1 , Christian Long 1
1 , National Institute of Standards and Technology, Boulder, Colorado, United States

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EM04.08: Ultra-Wide-Bandgap Materials
Session Chairs
Robert Kaplar
Thursday PM, November 30, 2017
Hynes, Level 1, Room 101

1:30 PM - *EM04.08.01
Wide- and Ultrawide-Bandgap Semiconductors—Update of Key Materials Parameters

Mark Hollis 1 , Paul Juodawlkis 1
1 , Massachusetts Institute of Technology, Lexington, Massachusetts, United States

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2:00 PM - EM04.08.02
Electronic Properties of Ultra-Wide-Band-Gap BAlN Alloys from First Principles

Jimmy-Xuan Shen 1 , Darshana Wickramaratne 2 , Chris Van de Walle 2
1 Department of Physics, University of California, Santa Barbara, Santa Barbara, California, United States, 2 Materials Department, University of California - Santa Barbara, Santa Barbara, California, United States

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2:15 PM - EM04.08.03
Structural and Electronic Properties of Wurtzite BxAl1-xN from First-Principles Calculations

Haiding Sun 1 , Muwei Zhang 1 , XiaoHang Li 1
1 , King Abdullah University of Science and Technology, Thuwal Saudi Arabia

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2:30 PM - EM04.08.04
Aluminium and Rare Earth Nitride Alloys—Theoretical Piezoelectric Properties and Applications

Patrick Daoust 1 , Patrick Desjardins 1 , Remo Masut 1
1 , Polytechnique Montréal, Montréal, Quebec, Canada

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2:45 PM - EM04.08.05
Observation of Coherent Folded Acoustic Modes in a Cubic-GaN/AlN Superlattice

Josh Whale 1 , Andrey Akimov 1 , Sergei Novikov 1 , Chris Mellor 1 , Anthony Kent 1
1 Physics and Astronomy, University of Nottingham, Nottingham United Kingdom

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3:00 PM -
BREAK

3:30 PM - *EM04.08.06
Diamond Epitaxy for High Power and High Temperature Electronics

Robert Nemanich 1 , Franz Koeck 1 , Maitreya Dutta 2 , Raghuraj Hathwar 1 , Mehdi Saremi 1 , Xingye Wang 1 , Brianna Eller 1 , Manpuneet Benipal 1 , Srabanti Chowdhury 2 , Stephen Goodnick 1
1 , Arizona State University, Tempe, Arizona, United States, 2 , University of California - Davis, Davis, California, United States

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4:00 PM - EM04.08.07
Ultrafast Carrier Dynamics in Wide Bandgap Semiconductor Materials

Roderick Davidson 2 , Adam Dunkelberger 1 , Ioannis Chatzakis 2 , Bradford Pate 1 , Joshua Caldwell 1 , Jeffrey Owrutsky 1
2 , National Research Council, District of Columbia, Washington, United States, 1 , Naval Research Laboratory, Washington, District of Columbia, United States

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4:15 PM - EM04.08.08
Modification of Hexagonal Boron Nitride Induced by Electromagnetic Radiation

Igor Wlasny 1 , Zbigniew Klusek 2 , Andrzej Wysmolek 1
1 , University of Warsaw, Warsaw Poland, 2 , University of Lodz, Lodz Poland

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4:30 PM - EM04.08.09
Synthesis and Nanoscale Structure Studies of Wafer Scaled Boron Nitride Nanosheets for Optical Devices and Graphene Electronics

Muhammad Sajjad 1 2 , Vladimir Makarov 2 3 , Wojciech Jadwisienczak 4 , Brad Weiner 2 5 , Gerardo Morell 3 2
1 , Western Kentucky University, Bowling Green, Kentucky, United States, 2 Physics, Institute of Functional Nanomaterials, University of Puerto Rico, San Juan, Puerto Rico, United States, 3 Physics, University of Puerto Rico at Río Piedras, San Juan, Puerto Rico, United States, 4 Electrical Engineering and Computer Science, School of Electrical Engineering and Computer Science, Ohio University, Athens, Ohio, United States, 5 Chemistry, University of Puerto Rico at Río Piedras, Athens, Ohio, United States

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4:45 PM - EM04.08.10
Controlling Intercalation at the Epitaxial Graphene/SiC Interface for Synthesis of Large-Area Ultra-Wide Bandgap 2D Gallium Nitride and 2D Nitride Heterostructures

Brian Bersch 1 , Natalie Briggs 1 , Zakaria Al Balushi 1 , Ke Wang 2 , Shruti Subramanian 1 , Joan Redwing 1 , Joshua Robinson 1
1 Materials Science and Engineering , The Pennsylvania State University, University Park, Pennsylvania, United States, 2 Materials Characterization Lab, The Pennsylvania State University, University Park, Pennsylvania, United States

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EM04.09: Poster Session: WBG/UWBG
Session Chairs
Robert Kaplar
Thursday PM, November 30, 2017
Hynes, Level 1, Hall B

8:00 PM - EM04.09.01
A Novel Prognostics Model of IGBTs and GaN HEMTs Based on Particle Filtering

Yizhou Lu 1
1 , University of Maryland, College Park, College Park, Maryland, United States

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8:00 PM - EM04.09.02
InTlP Compounds for Underwater Solar Energy Harvesting

Ahmed Zayan 1 , Thomas Vandervelde 1
1 Electrical and Computer Engineering, Tufts University, Medford, Massachusetts, United States

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8:00 PM - EM04.09.03
Transparent Metal Oxide Solar Cells

Malkeshkumar Patel 1 2 , Hong-Sik Kim 1 2 , Joondong Kim 1 2
1 , Incheon National University, Incheon Korea (the Republic of), 2 , Photoelectric and Energy Device Application Lab (PEDAL), Multidisciplinary Core Institute for Future Energies (MCIFE), Incheon Korea (the Republic of)

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8:00 PM - EM04.09.04
Influence of 2,2-Bithiophene and Thieno[3,2-b] Thiophene Units on the Photovoltaic Performance of Benzodithiophene-Based Wide-Bandgap Polymers

Xiaobo Sun 1
1 , Beihang University, Beijing China

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8:00 PM - EM04.09.05
Thermodynamic Analysis of the TMG Decomposition Process in GaN MOVPE

Kazuki Sekiguchi 1 , Hiroki Shirakawa 1 , Kenta Chokawa 1 , Masaaki Araidai 2 1 , Yoshihiro Kangawa 3 2 , Koichi Kakimoto 3 , Kenji Shiraishi 2 1
1 , Graduate School of Engineering, Nagoya University, Nagoya, Aichi, Japan, 2 , Institute of Materials and Systems for Sustainability, Nagoya University, Nagoya, Aichi, Japan, 3 , Research Institute for Applied Mechanics, Kyushu University, Kasuga, Fukuoka, Japan

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8:00 PM - EM04.09.06
Fabrication of α-(AlxGa1-x)2O3 Using Carbon-Free Precursor by Mist CVD Method

Riena Jinno 1 , Shu Takemoto 1 , Takayuki Uchida 1 , Kentaro Kaneko 1 2 , Shizuo Fujita 1 2
1 Department of Electronic Science and Engineering, Kyoto University, Kyoto, Kyoto, Japan, 2 Photonics and Electronics Science and Engineering Center, Kyoto University, Kyoto, Kyoto, Japan

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8:00 PM - EM04.09.07
Photonic Localization and Transport in Non-Periodic Wide-Bandgap Heterostructures—An Ab Initio Based Multiscale Study

Vicenta Sanchez Morales 1 , J. Guillermo Munguia-Fernandez 1 , Chumin Wang 1
1 , Universidad Nacional Autonoma de Mexico, Mexico City Mexico

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8:00 PM - EM04.09.08
Structures and Energetics of Faceted Inversion Domain Boundaries in GaN and AlN Doped with Mg

Toru Akiyama 1 , Kohji Nakamura 1 , Tomonori Ito 1
1 Department of Physics Engineering, Mie University, Tsu-shi, Mie, Japan

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8:00 PM - EM04.09.09
Drastic Enhancement of GaN Growth Rate by Halogen-Free Vapor Phase Epitaxy with Porosity-Controlled Gallium Evaporator

Daisuke Nakamura 1 , Taishi Kimura 1
1 , Toyota Central R&D Labs Inc, Nagakute Japan

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8:00 PM - EM04.09.10
Preparation and Characterization of Chip-Level Flip-Chip White LED Based on InP/ZnS Quantum Dots Excitation Technology

Bingfeng Fan 1 2 , Linchao Yan 3 , Gang Wang 3
1 Institute of Advanced Technology, Sun Yat-sen Univiersity, Guangzhou, Guangdong, China, 2 Device Research and Development Department, Foshan Institute of Sun Yat-sen University, Foshan China, 3 School of Electronics and Information Technology, Sun Yat-sen University, Guangzhou, Guangdong, China

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8:00 PM - EM04.09.11
Enhanced Light Output of AlGaN-Based Near-Ultraviolet Light-Emitting Diodes with Highly Reflective Backside Ta2O5/SiO2 Hybrid Distributed Bragg Reflector

Bingfeng Fan 1 2 , Yanfei Ma 3 , Gang Wang 3
1 Institute of Advanced Technology, Sun Yat-sen University, Guangzhou, Guangdong, China, 2 Device and Equipment Research and Development Department, Foshan Institute of Sun Yat-sen University, Foshan China, 3 School of Electronics and Information Technology, Sun Yat-sen University, Guangzhou, Guangdong, China

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8:00 PM - EM04.09.13
Growth of Ga2-xSnxO3 Films by Mist Chemical Vapor Deposition

Kenichiro Rikitake 1 , Takuya Kobayashi 1 , Tomohiro Yamaguchi 1 , Takeyoshi Onuma 1 , Tohru Honda 1
1 , Kogakuin University, Tokyo Japan

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8:00 PM - EM04.09.14
Fabrication of Corundum-Structured P-Type α-Ir2O3 Thin Films on α-Ga2O3 Layers

Shinichi Kan 3 , Shu Takemoto 3 , Kentaro Kaneko 1 3 , Toshimi Hitora 2 , Shizuo Fujita 1 3
3 Department of Electronic Science and Engineering, Kyoto University, Kyoto Japan, 1 Photonics and Electronics Science and Engineering Center, Kyoto University, Kyoto Japan, 2 , FLOSFIA Inc., Kyoto Japan

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8:00 PM - EM04.09.15
Doping Mg into AlN Thin Film to Enhance Its Piezoelectric Response

Sri Ayu Anggraini 1 , Masato Uehara 1 , Hiroshi Yamada 1 , Morito Akiyama 1
1 , AIST, Fukuoka Japan

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8:00 PM - EM04.09.16
Residual Stress Analysis during Surface Process of Single Sapphire Wafer by HRXRD

In-young Jung 2 1 , Seungwoo Song 1 , Minhyuk Choi 1 , Jaesuk Kim 1 , Eun Kyu Kim 2 , Chang Soo Kim 1
2 Physics, Hanyang University, Daejeon Korea (the Republic of), 1 Division of Industrial Metrology, Korea Research Institute of Standards and Science, Daejeon Korea (the Republic of)

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Hyunwoo Park 1 , Seokyoon Shin 1 , Giyul Ham 1 , Hyeongsu Choi 1 , Namgue Lee 1 , Sejin Kwon 1 , Minwook Bang 1 , Hyeongtag Jeon 1
1 , Hanyang University, Seoul Korea (the Republic of)

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8:00 PM - EM04.09.18
Crystal Structure Control in Epitaxial Growth of In2O3 by Mist CVD

Takuya Kobayashi 1 , Tomohiro Yamaguchi 1 , Takeyoshi Onuma 1 , Tohru Honda 1
1 , Kogakuin University, Tokyo Japan

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8:00 PM - EM04.09.19
AlGaN/GaN HEMTs with a 2DHG Back Gate Control

Wei-Tse Lin 1 , Wen-Chia Liao 1 , Chia-Wei Hsu 1 , Yi-Nan Zhong 1 , Yue-Ming Hsin 1
1 , National Central University, Jhongli Taiwan

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8:00 PM - EM04.09.20
AlGaN/GaN MIS-HEMTs with a p-GaN Cap Layer

Che-Ching Hsu 1 , Pei-Chien Shen 1 , Yue-Ming Hsin 1
1 , National Central University, Taoyuan City Taiwan

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8:00 PM - EM04.09.21
Fabrication of Nitride Thin Films on Si Substrates by Atomic Layer Deposition Technique

Shumpei Ogawa 1 , Tatsuya Kuroda 1 , Ryuga Koike 1 , Hiroki Ishizaki 1
1 , Saitama Institute of Technology, Fukaya Japan

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8:00 PM - EM04.09.22
Wide Band Gap p-CuI/n-BaSnO3-δ Heterojunctions with a High Current Rectification Ratio

Jeong Hyuk Lee 1 , Woong-Jhae Lee 1 , Tai Hoon Kim 1 , Takhee Lee 2 , Seunghun Hong 2 , Kee Hoon Kim 1 2
1 , Center for Novel States of Complex Materials Research, Department of Physics and Astronomy, Seoul National University, Seoul Korea (the Republic of), 2 , Institute of Applied Physics, Department of Physics and Astronomy, Seoul National University, Seoul Korea (the Republic of)

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8:00 PM - EM04.09.23
Impact of Indium Distribution in Quantum Wells on Efficiency Droop of InGaN Light Emitting Diodes

Sarah Goodman 1 , Akshay Singh 1 , Zhibo Zhao 1 , Dong Su 2 , Kim Kisslinger 2 , Rob Armitage 3 , Isaac Wildeson 3 , Parijat Deb 3 , Eric Stach 2 , Silvija Gradecak 1
1 Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts, United States, 2 Center for Functional Nanomaterials, Brookhaven National Laboratory, Upton, New York, United States, 3 , LumiLEDs, San Jose, California, United States

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8:00 PM - EM04.09.24
Proton Irradiation Energy-Dependence of Degradation in AlGaN/GaN MOS-HFETs and Schottky HFETs by Tandem Ion Accelerator

Dongmin Keum 1 , Guhyeok Chung 1 , Hyungtak Kim 1
1 , Hongik University, Seoul, SE, Korea (the Republic of)

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8:00 PM - EM04.09.25
Electrical Characteristics of Normally-off AlGaN/GaN-on-Si Recessed MISHFETs at Cyrogenic Temperatures

Dongmin Keum 1 , Heehyeong Cho 1 , Guhyeok Chung 1 , Hyungtak Kim 1
1 , Hongik University, Seoul Korea (the Republic of)

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8:00 PM - EM04.09.26
Electrical Characterization of Si-Doped N-Type α-Ga2O3 on Sapphire Substrates

Takayuki Uchida 1 , Kentaro Kaneko 1 , Shizuo Fujita 1
1 , Kyoto University, Kyoto Japan

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8:00 PM - EM04.09.27
Deposition of β-Ga2O3 on GaN at Sub-200oC Using a Microwave-Assisted Process

Piyush Jaiswal 1 , Usman Muazzam 1 , Rangarajan Muralidharan 1 , S Shivashankar 1 , Digbijoy Nath 1 , Avanish Mishra 1
1 Centre for Nano Science and Engineering, Indian Institute of Science, Bangalore, Karnataka, India

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2017-12-01   Show All Abstracts

Symposium Organizers

Robert Kaplar, Sandia National Laboratories
Mitsuru Funato, Kyoto University
Matteo Meneghini, University of Padova
Rachael Myers-Ward, U.S. Naval Research Laboratory
EM04.10: Oxide Materials and Devices I
Session Chairs
Rachael Myers-Ward
Friday AM, December 01, 2017
Hynes, Level 1, Room 101

8:15 AM - *EM04.10.01
Resistivity Optimization of β-Ga2O3 for Power MOSFETs and RF Applications

Gregg Jessen 1 , Kelson Chabak 1 , Andrew Green 2 1 , Neil Moser 3 1 , Antonio Crespo 1 , Stephen Tetlak 1 , Kevin Leedy 1 , Jonathan McCandless 2 1 , Shin Mou 1 , Adam Neal 4 1
1 , Air Force Research Laboratory, Wpafb, Ohio, United States, 2 , KBRwyle, Dayton, Ohio, United States, 3 Electrical and Computer Engineering, George Mason University, Fairfax, Virginia, United States, 4 , Universal Technology Corporation, Dayton, Ohio, United States

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8:45 AM - EM04.10.02
Delta-Doped β-Ga2O3 Field Effect Transistors with Patterned Regrown Ohmic Contacts

Zhanbo Xia 1 , Sriram Krishnamoorthy 1 , Chandan Joishi 1 2 , Sanyam Bajaj 1 , Yuewei Zhang 1 , Mark Brenner 1 , Saurabh Lodha 2 , Siddharth Rajan 1 3
1 Department of Electrical and Computer Engineering, The Ohio State University, Columbus, Ohio, United States, 2 Department of Electrical Engineering, Indian Institute of Technology Bombay, Mumbai India, 3 Department of Materials Science and Engineering, The Ohio State University, Columbus, Ohio, United States

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9:00 AM - EM04.10.03
Performance Comparison of Ga2O3 Schottky Diodes Fabricated on HVPE and MBE Epitaxial Material

Andrea Corrion 1 , Mary Chen 1 , Yu Cao 1
1 , HRL Laboratories, Malibu, California, United States

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9:15 AM - EM04.10.04
Humidity Sensors from Individual Gallium Oxide Nanowires—Synthesis, Characterization and Sensing Properties

Guillem Domènech-Gil 2 1 , Irmina Peiro 1 , Jordi Sama 1 2 , Paolo Pellegrino 1 2 , Sergi Hernández 1 2 , Mauricio Moreno 1 2 , Sven Barth 3 , Albert Romano-Rodriguez 1 2
2 MIND, Universitat de Barcelona, Barcelona Spain, 1 Institute of Nanoscience and Nanotechnology , Universitat de Barcelona, Barcelona Spain, 3 , Vienna University of Technology , Vienna Austria

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9:30 AM - EM04.10.05
Improvement in Performance of Zn-O-N Thin-Film Transistors by Si Doping

Hiroshi Tsuji 1 , Tatsuya Takei 1 , Mitsuru Nakata 1 , Masashi Miyakawa 1 , Yoshihide Fujisaki 1 , Toshihiro Yamamoto 1
1 , NHK Science & Technology Research Laboratories, Tokyo Japan

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9:45 AM -
DISCUSSION TIME

10:00 AM -
BREAK

10:30 AM - EM04.10.07
High-Quality, Homoepitaxial Si-Doped β-Ga2O3 (010) and β-(AlxGa1-x)2O3/Ga2O3 (010) Heterostructures Grown by Pulsed Laser Epitaxy

Shanee Pacley 1 , Brandon Howe 1 , Shin Mou 1 , Gregg Jessen 2 , Kevin Leedy 2 , Adam Neal 1 , Krishnamurthy Mahalingam 1
1 Materials and Manufacturing Directorate, Air Force Research Laboratory (AFRL), Wright Patterson AFB, Ohio, United States, 2 Sensors Directorate, Air Force Research Laboratory (AFRL), Wright Patterson AFB, Ohio, United States

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10:45 AM - EM04.10.08
High Quality Epitaxial β-Ga2O3 Growth by MOCVD

Fikadu Alema 1 , Brian Hertog 1 , Andrei Osinsky 1 , Elaheh Ahmadi 2 , James Speck 2 , Feng Wu 2 , Maxim Bogdanov 3 , Anna Lobanova 3 , Roman Talalaev 3 , Alex Galyukov 4
1 , Agnitron Technology Inc, Eden Prairie, Minnesota, United States, 2 Materials Department, University of California, Santa Barbara, Santa Barbara, California, United States, 3 , STR Group, Inc. Soft Impact, Ltd, St. Petersburg Russian Federation, 4 , STR US, Inc., Richmond, Virginia, United States

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11:00 AM - EM04.10.09
Elementary Growth Process in Homoepitaxial Growth of β-Ga2O3

Martin Albrecht 1 , Robert Schewski 1 , Deniis Meiling 1 , Michele Baldini 1 , Guenter Wagner 1 , Zbigniew Galazka 1
1 , Leibniz Institut fuer Kristallzuechtung, Berlin Germany

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11:15 AM - EM04.10.10
Growth Behavior of Ga2O3 on Sapphire Substrate by Controlling Interface

Riena Jinno 1 , Shu Takemoto 1 , Takayuki Uchida 1 , Kentaro Kaneko 1 2 , Shizuo Fujita 1 2
1 Department of Electronic Science and Engineering, Kyoto University, Kyoto, Kyoto, Japan, 2 Photonics and Electronics Science and Engineering Center, Kyoto University, Kyoto, Kyoto, Japan

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11:30 AM - EM04.10.11
Solid-Phase Heteroepitaxy and Property Modification of β-Ga2O3 Thin Films by Room-Temperature Excimer Laser Annealing

Akifumi Matsuda 1 , Kisho Nakamura 1 , Hiroyuki Morita 1 , Nobuo Tsuchimine 2 , Satoru Kaneko 3 1 , Mamoru Yoshimoto 1
1 , Tokyo Institute of Technology, Yokohama Japan, 2 , TOSHIMA Manufacturing Co., Ltd., Higashi-Matsuyama, Saitama, Japan, 3 , Kanagawa Institute of Industrial Science and Technology, Ebina, Kanagawa, Japan

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11:45 AM - EM04.10.12
Oxygen-Vacancy-Assisted Recovery Process to Enhance Electron Mobility in N-Type BaSnO3 Epitaxial Thin Films

Daseob Yoon 1 , Sangbae Yu 1 , Junwoo Son 1
1 Department of Materials Science and Engineering, Pohang University of Science and Technology (POSTECH), Pohang 37673 Korea (the Republic of)

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EM04.11: Oxide Materials and Devices II
Session Chairs
Rachael Myers-Ward
Friday PM, December 01, 2017
Hynes, Level 1, Room 101

1:30 PM - EM04.11.01
Bandgap Tunability of Amorphous Ga2(O1-xSx)3 Highly Mismatched Alloys

Maribel Jaquez 1 2 , Kin Man Yu 3 , Petra Specht 4 , Wladyslaw Walukiewicz 1 4 , Oscar Dubon 1 4
1 Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California, United States, 2 Department of Mechanical Engineering, University of California, Berkeley, California, United States, 3 Department of Physics and Materials Science, City University of Hong Kong, Kowloon Hong Kong, 4 Department of Materials Science and Engineering, University of California, Berkeley, California, United States

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1:45 PM - EM04.11.02
Analytical Electron Microscopy of Ga2O3/SiO2 and Ga2O3/Al2O3 Interface Structures in MOS Devices

Christopher Klingshirn 1 , Joshua Taillon 1 , Asanka Jayawardena 2 , Sarit Dhar 2 , Tsvetanka Zheleva 3 , Aivars Lelis 3 , Lourdes Salamanca-Riba 1
1 Materials Science and Engineering, University of Maryland, College Park, Maryland, United States, 2 Physics, Auburn University, Auburn, Alabama, United States, 3 , U. S. Army Research Laboratory, Adelphi, Maryland, United States

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2:00 PM - EM04.11.03
Strain Engineering and Two-Dimensional Electron Gas in Polar ε-Ga2O3 Heterostructures

Sung Beom Cho 1 2 , Rohan Mishra 1 2
1 Mechanical Engineering and Materials Science, Washington University in St. Louis, Saint Louis, Missouri, United States, 2 Institute of Materials Science and Engineering, Washington University in St. Louis, St. Louis, Missouri, United States

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2:15 PM - EM04.11.04
Theoretical Characterization of the Vibrational, Thermal and Electron Transport Properties of β-Ga2O3 from First Principles

Kelsey Mengle 1 , Emmanouil Kioupakis 1
1 , University of Michigan, Ann Arbor, Michigan, United States

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2:30 PM - EM04.11.05
Study of Phonon Transport in Pristine and Defective β-Ga2O3

Zhequan Yan 1 , Satish Kumar 1
1 , Georgia Institute of Technology, Atlanta, Georgia, United States

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2:45 PM - EM04.11.06
Structural and Optical Properties of Composition Tuned Wide Bandgap ZnxMg1-xO Nanostructures Grown by Vapor Transport Method

Jignesh Vanjaria 1 , Hongbin Yu 1
1 , Arizona State University, Tempe, Arizona, United States

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3:00 PM -
BREAK

3:30 PM - EM04.11.07
Bandgap Engineering and MOCVD Growth of High Quality β-(Al,Ga)2O3/ Ga2O3 Heterostructures for Power Switches

Andrei Osinsky 1 , Fikadu Alema 1 , Brian Hertog 1 , Elaheh Ahmadi 2 , Feng Wu 2 , James Speck 2 , Benjamin H Nieters 3 , Timothy Vogt 3
1 , Agnitron Technology Inc, Eden Prairie, Minnesota, United States, 2 Materials Department, University of California, Santa Barbara, Santa Barbara, California, United States, 3 Electrical and Computer Engineering, Saint Cloud State University, Saint Cloud, Minnesota, United States

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3:45 PM - EM04.11.08
Synthesis and Physical Properties of Doped Gallium Oxide

Manuel Alonso-Orts 1 , Jaime Dolado 1 , Marco Peres 2 , Katharina Lorenz 2 , Iñaki Lopez 3 1 , Emilio Nogales 1 , Javier Piqueras 1 , Bianchi Mendez 1
1 , Univ of Complutense, Madrid Spain, 2 , Insituto Superior Tecnico, Bobadela Portugal, 3 , Istituto Nazionale Ottica, Florence Italy

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4:00 PM - EM04.11.09
Epitaxial Growth of Cu2O on C-Axis Oriented ZnO Films by Atomic Layer Deposition

Claudia de Melo Sanchez 1 2 , Maud Jullien 1 , Jean-Francois Pierson 1 , Yann Battie 3 , Aotmane En Naciri 3 , Francois Montaigne 1 , Frank Muecklich 2 , David Horwat 1
1 , Institut Jean Lamour, UMR CNRS, Nancy France, 2 Department of Materials Science and Engineering, Saarland University, Saarbrücken Germany, 3 Institut Jean Barriol, Université de Lorraine, Metz France

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4:15 PM - EM04.11.10
Gallium Antimonate—A Wide-Bandgap Semiconductor with Hidden Ordering

Adam Jackson 1 , W. Winnie Leung 1 , Alex Ganose 1 , Ian Godfrey 1 , G Sankar 1 , R. Palgrave 1 , David Scanlon 1
1 , University College London, London United Kingdom

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4:30 PM - EM04.11.11
Dual Emitting Doped Oxide Nanostructures for Fluorescence Intensity Ratio Based Optical Temperature Sensing

Subrata Senapati 1 , Karuna Kar Nanda 1
1 , Indian Institute of Science, Bangalore, KA, India

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