Manuel Bibes1,Ruchi Tomar1,Tatiana Kuznetsova2,Srijani Mallik1,Luis M. Vicente-Arche1,Maximilien Cazayous3,Roman Engel-Herbert2,4
Unité Mixte de Physique, CNRS, Thales, Université Paris-Saclay, 91767 Palaiseau, France1,Pennsyvlania State University, University Park, PA 16802, USA2,Laboratoire Matériaux et Phénomènes Quantiques (UMR 7162 CNRS), Université de Paris, 75205 Paris Cedex 13, France3,Paul Drude Institute, Berlin, Germany4
Manuel Bibes1,Ruchi Tomar1,Tatiana Kuznetsova2,Srijani Mallik1,Luis M. Vicente-Arche1,Maximilien Cazayous3,Roman Engel-Herbert2,4
Unité Mixte de Physique, CNRS, Thales, Université Paris-Saclay, 91767 Palaiseau, France1,Pennsyvlania State University, University Park, PA 16802, USA2,Laboratoire Matériaux et Phénomènes Quantiques (UMR 7162 CNRS), Université de Paris, 75205 Paris Cedex 13, France3,Paul Drude Institute, Berlin, Germany4
Two-dimensional electron gases (2DEGs) based on the quantum paraelectric SrTiO<sub>3</sub> display fascinating properties such as large electron mobilities, superconductivity and efficient spin-charge interconversion owing to their Rashba spin-orbit coupling.<sup>1-3</sup> However, such 2DEGs have almost exclusively been generated in SrTiO<sub>3</sub> single crystals, with the few attempts to replace crystals by heteroepitaxial SrTiO<sub>3</sub> thin films leading to low carrier mobilities. This is limiting the potential to integrate SrTiO<sub>3</sub> 2DEGs in future devices as well as the possibility to introduce additional functionalities specific to SrTiO<sub>3</sub> thin films, such as strain-induced ferroelectricity. Here, we use oxide molecular beam epitaxy to grow high quality strain-engineered SrTiO<sub>3</sub> films that are ferroelectric up to 170 K. We then generate a 2DEG by sputtering a thin Al layer and demonstrate an increase in both the low and room temperature mobilities by up to factor of four compared to earlier literature. Furthermore, through Raman spectroscopy and magneto-transport measurements, we show that the ferroelectric character is retained after 2DEG formation. These results thus qualify our samples as ferroelectric 2DEGs up to temperatures well above previous results based on Ca-SrTiO<sub>3</sub> substrates (~30 K)<sup>4</sup>, opening the way towards ferroelectric 2DEGs operating at room temperature.<br/><b>Références :</b><br/>M. Bibes, J. E. Villegas, and A. Barthelemy, Adv. Phys. 60, 5 (2011).<br/>H. Y. Hwang, Y. Iwasa, M. Kawasaki, B. Keimer, N. Nagaosa, and Y. Tokura, Nat. Mater. 11, 103 (2012).<br/>S. Varotto, A. Johansson, B. Göbel, L. M. Vicente-Arche1, S. Mallik, J. Bréhin , R. Salazar, F. Bertran, P. Le Fèvre, N. Bergeal, J. Rault, I. Mertig & M. Bibes, Nat. Commun., 13, 6165 (2022)<br/>C. W. Rischau, X. Lin, C. P. Grams, D. Finck, S.Harms, J. Engelmayer, T. Lorenz, Y. Gallais, B. Fauqué, J. Hemberger, and K. Behnia, Nat Phys, 13, 643 ()2017.