Biplav Dahal1
Florida International University1
Biplav Dahal1
Florida International University1
The tin oxide (SnO<sub>2</sub>) electron transport layer (ETL) plays a vital role in the photo-conversion efficiency (PCE) and stability of organic-inorganic perovskite solar cells (PSCs). However, SnO<sub>2</sub> ETL-induced defects such as hydroxyl groups, oxygen vacancies, exposed Sn atoms, and dangling bonds hinder device performance. In this study, rubidium chloride (RbCl) has been used to modify the SnO<sub>2</sub> ETL. MAPbI<sub>3</sub> perovskite film formed on the RbCl-modified SnO<sub>2</sub> ETL exhibits improved crystallinity with enlarged grain size and reduced grain boundaries, and enhanced optical absorption. The Hall-effect measurements indicate the improved carrier mobility and the dark J-V curve shows the increment of electrical conductivity for the RbCl-modified SnO<sub>2</sub> ETL. X-ray photoelectron spectroscopy (XPS) results demonstrate the surface defects passivation of the perovskite layer by modifying the SnO<sub>2</sub> ETL. A champion PCE of 19.35% has been achieved for the RbCl-modified SnO<sub>2</sub> ETL-based devices with improved stability, while the control devices with unmodified SnO<sub>2</sub> ETL show a PCE of 17.18%.