Ross Kerner1,John Lyons2,Kai Zhu1,Joseph Berry1,3
National Renewable Energy Laboratory1,U.S. Naval Research Laboratory2,University of Colorado Boulder3
Ross Kerner1,John Lyons2,Kai Zhu1,Joseph Berry1,3
National Renewable Energy Laboratory1,U.S. Naval Research Laboratory2,University of Colorado Boulder3
Lead halide perovskites show unrivaled performance and versatility in optoelectronic devices; however, the issues of photo- and electrochemical stability and halide phase segregation remain a challenge to take full advantage of halide perovskites. Here, we describe our proposed model to explain how homogeneously mixed iodide (I):bromide (Br) perovskite alloys (e.g. MAPbBr<sub>x</sub>I<sub>1-x</sub>) phase separate into I-rich and Br-rich regions under bias or illumination. The model predicts iodine +1 interstitials play a critical, intrinsic role giving rise to unequal fluxes of halide species – the origin of voltage- or photo-induced compositional instabilities. We briefly review our recent experimental results testing the model and discuss in detail our recent density functional theory (DFT) computations comparing the relative formation enthalpies of I<sub>i</sub><sup>+</sup> versus Br<sub>i</sub><sup>+</sup> interstitial defects in different halide compositions. We find that I<sub>i</sub><sup>+</sup> defects are energetically favorable by 0.1-0.4 eV over Br<sub>i</sub><sup>+</sup> under most conditions, and also show that I<sub>i</sub><sup>+</sup> is further stabilized when surrounded by iodide first- and second-nearest neighbors. In other words, I<sub>i</sub><sup>+</sup> will be most stable and favorably migrate towards iodide-rich regions making them more iodide-rich. Thus, we confirm our model’s core assumption and elucidate a major fundamental, thermodynamic driving force for halide phase separation following oxidation and creation of I<sub>i</sub><sup>+</sup> defects. Overall, this body of work brings a level of clarity to interstitial defect chemistry and physics in halide perovskites, advancing our understanding a step closer to that of more conventional semiconductors.