2022 MRS Spring Meeting & Exhibit Landing Banner

Symposium EQ01—Ultra-Wide Bandgap Materials and Devices

2022-05-10   Show All Abstracts

Times shown in HST (GMT-10:00)

Symposium Organizers

Robert Kaplar, Sandia National Laboratories
Srabanti Chowdhury, Stanford University
Yoshinao Kumagai, Tokyo University of Agriculture and Technology
Julien Pernot, University of Grenoble Alpes
EQ01.04: Diamond I
Session Chairs
Timothy Grotjohn
Julien Pernot
Tuesday AM, May 10, 2022
Hawai'i Convention Center, Level 3, 318B

8:30 AM - *EQ01.04.01
Diamond and Ultra-Wide Bandgap Semiconductors for Power Electronics

Robert Nemanich1

Arizona State University1

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9:00 AM - *EQ01.04.02
Vertical Diamond p-FETs with Normally-Off Operation for Complementary High Power and High Speed Inverters

Hiroshi Kawarada1

Waseda University1

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9:30 AM - EQ01.04.03
Methane Influence on Diamond Schottky Barrier Diode Performance

Ken Haenen1,2,Rozita Rouzbahani1,2,Juliette Letellier3,Paulius Pobedinskas1,2,David Eon3,Julien Pernot3

Hasselt University1,IMEC vzw2,Université Grenoble Alpes, CNRS3

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9:45 AM - EQ01.04.04
Photo-Induced Phase Transition of Diamond—A Nonadiabatic Quantum Molecular Dynamics Study

Shogo Fukushima1,2,Rajiv Kalia1,Thomas Linker1,Ken-ichi Nomura1,Aiichiro Nakano1,Kohei Shimamura2,Fuyuki Shimojo2,Priya Vashishta1

University of South Carolina1,Kumamoto University2

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10:00 AM - EQ01.04
BREAK


10:30 AM - EQ01.04.06
Diamond FET Technology for Power Electronics

Etienne Gheeraert1,2

University Grenoble Alpes1,Centre National de la Recherche Scientifique2

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10:45 AM - EQ01.04.07
Polycrystalline Diamond Micro/Nano-Electro-Mechanical Systems

Oliver Williams1,Evan Thomas1,Soumen Mandal1,Jaspa Stritt1,William Leigh1,Matthias Imboden2

Cardiff University1,4K-MEMS Sàrl2

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2022-05-11   Show All Abstracts

Times shown in HST (GMT-10:00)

Symposium Organizers

Robert Kaplar, Sandia National Laboratories
Srabanti Chowdhury, Stanford University
Yoshinao Kumagai, Tokyo University of Agriculture and Technology
Julien Pernot, University of Grenoble Alpes
EQ01.06: Nitrides I
Session Chairs
Alan Doolittle
Wednesday AM, May 11, 2022
Hawai'i Convention Center, Level 3, 318B

8:30 AM - EQ01.06.01
Substantial P-Type, N-Type and Homojunction Diode Functionality Using the Highest Bandgap Semiconductor Ever Demonstrated

Alan Doolittle1,Habib Ahmad1,Zachary Engel1,Christopher Matthews1,Keisuke Motoki1,Sangho Lee1

Georgia Institute of Technology1

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8:45 AM - EQ01.06.02
Molecular Beam Homoepitaxy of N-Polar AlN on Bulk AlN Substrates

Jashan Singhal1,Jimy Encomendero Risco1,Yongjin Cho1,Len Deurzen1,Zexuan Zhang1,Kazuki Nomoto1,Masato Toita2,Huili Xing1,Debdeep Jena1

Cornell University1,Asahi Kasei Corporation2

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9:00 AM - EQ01.06.03
Design of Transverse Quasi-Phase-Matched Non-Polar/AlN Waveguides for 230-nm Far-UV Second Harmonic Generation

Hiroto Honda1,Soshi Umeda1,Kanako Shojiki2,1,Hideto Miyake2,Maki Kushimoto3,Yasufumi Fujiwara1,Masahiro Uemukai1,Tomoyuki Tanikawa1,Ryuji Katayama1

Osaka University1,Mie University2,Nagoya University3

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9:15 AM - EQ01.06.04
Molecular Beam Homoepitaxy of N-Polar AlN—The Enabling Role of Aluminum-Assisted Surface Cleaning

Zexuan Zhang1,Yusuke Hayashi2,Vladimir Protasenko1,Jashan Singhal1,Hideto Miyake3,Huili Xing1,Debdeep Jena1,Yongjin Cho1

Cornell University1,Osaka University2,Mie University3

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9:30 AM - EQ01.06.05
Thermal and Electrical Properties of Wide Bandgap Nitride Thin Films Deposited at Low Temperatures for Heterogeneous Integration

Michelle Chen1,Christopher Perez1,Scott Ueda2,Aaron Mcleod2,Victoria Chen1,Zachary Sobell3,Cagil Koroglu1,Asir Intisar Khan1,Steven George3,Andrew Kummel2,Kenneth Goodson1,Eric Pop1

Stanford University1,University of California, San Diego2,University of Colorado Boulder3

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9:45 AM - EQ01.06
BREAK


10:15 AM - EQ01.06.07
TaC Virtual Substrates for AlGaN Epitaxy

Dennice Roberts1,Andrew Norman1,Vladan Stevanovic2,Marshall Tellekamp1

National Renewable Energy Laboratory1,Colorado School of Mines2

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10:30 AM - EQ01.06.08
Controllable N-Type Doping in Ultra-Wide Bandgap AlN By Chemical Potential Control

Pegah Bagheri1,Cristyan Quinones-Garcia1,Pramod Reddy2,Seiji Mita2,Ramon Collazo1,Zlatko Sitar1,2

North Carolina State University1,Adroit Materials2

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10:45 AM - EQ01.06.09
Increasing the Power-Electronics Figure of Merit of AlGaN with Atomically Thin Superlattices

Nick Pant1,Woncheol Lee1,Nocona Sanders1,Emmanouil Kioupakis1

University of Michigan1

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EQ01.07: Nitrides II
Session Chairs
Srabanti Chowdhury
Robert Kaplar
Wednesday PM, May 11, 2022
Hawai'i Convention Center, Level 3, 318B

1:30 PM - *EQ01.07.01
Selective Area Regrowth of p-type GaN and AlGaN for Power Diodes

A. Allerman1,M. H. Crawford1,A. T. Binder1,Andrew Armstrong1,G. W. Pickrell1,V. M. Abate1,J. Steinfeldt1,Robert Kaplar1

Sandia National Laboratories1

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2:00 PM - EQ01.07.02
Growth and Characterization of N-Polar AlGaN/AlGaN HEMTs with Varying Al Mole Fractions

Maliha Noshin1,Xinyi Wen1,Rohith Soman1,Xiaoqing Xu1,Srabanti Chowdhury1

Stanford University1

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2:15 PM - EQ01.07.03
Electrical Characteristics of Ag-Pd-Cu Alloy Schottky Contacts on n-Type Al0.6Ga0.4N

Keebaek Sim1,Su-Kyung Kim1,Tae-Yeon Seong1

Korea University1

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2:30 PM - EQ01.07.04
MOCVD Development of Thick GaN for Vertical High Power Devices

Yuxuan Zhang1,Vijay Gopal Thirupakuzi Vangipuram1,Vishank Talesara1,Kaitian Zhang1,Wu Lu1,Hongping Zhao1

The Ohio State University1

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2:45 PM - EQ01.07
BREAK


3:15 PM - EQ01.07.06
High Dielectric Constant (111)-Oriented Sr1-xCaxTiO3 Epitaxial Layers Integrated on AlGaN/GaN Heterostructures

Eric Jin1,Brian Downey1,Vikrant Gokhale1,Jason Roussos1,Matthew Hardy1,Tyler Growden1,Neeraj Nepal1,D. Katzer1,Jeffrey Calame1,David Meyer1

U.S. Naval Research Laboratory1

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3:30 PM - EQ01.07.07
Vertical GaN P-N Power Diodes with over 5 kV Breakdown Voltage

Vishank Talesara1,Yuxuan Zhang1,Vijay Gopal Thirupakuzi Vangipuram1,Hongping Zhao1,Wu Lu1

The Ohio State University1

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3:45 PM - EQ01.07.08
Determination of Mn Charge State in Bulk GaN:Mn Through Magnetization Steps

Katarzyna Gas1,Piotr Wisniewski2,Dariusz Sztenkiel1,Aneta Grochot1,Rafal Jakiela1,Malgorzata Iwinska3,Tomasz Sochacki3,Hanka Przybylinska1,Michal Bockowski3,Maciej Sawicki1

Institute of Physics Polish Academy of Sciences1,Institute of Low Temperature and Structure Research, Polish Academy of Sciences2,Institute of High Pressure Physics, Polish Academy of Sciences Warsaw3

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4:00 PM - EQ01.06.10
Growth and Characterization of High-Temperature, High-Quality, Nitrogen-Polar InAlN Films Using Plasma Assisted Molecular Beam Epitaxy

Majid Aalizadeh1,Kamruzzaman Khan1,Elaheh Ahmadi1

University of Michigan–Ann Arbor1

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2022-05-13   Show All Abstracts

Times shown in HST (GMT-10:00)

Symposium Organizers

Robert Kaplar, Sandia National Laboratories
Srabanti Chowdhury, Stanford University
Yoshinao Kumagai, Tokyo University of Agriculture and Technology
Julien Pernot, University of Grenoble Alpes
EQ01.10: Oxides III
Session Chairs
Srabanti Chowdhury
Friday AM, May 13, 2022
Hawai'i Convention Center, Level 3, 318B

8:30 AM - *EQ01.10.01
Optically Detected Defect Levels in Ga2O3

Mary Ellen Zvanut1,Suman Bhandari1

University of Alabama-Birmingham1

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9:00 AM - EQ01.10.02
WITHDRAWN 5/10/22 EQ01.10.02 Gallium Vacancy Energetics in Gallium Oxide Extracted from the Radiation Phenomena and Diffusion Experiments

Andrej Kuznetsov1,Alexander Azarov1,Vishnukanthan Azarov1,Lasse Vines1,Eduard Monakhov1,Inhwan Lee2

Univ of Oslo1,Korea University2

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9:15 AM - EQ01.10.03
Atomic Scale Investigation of Point and Extended Defects in Ion Implanted β-Ga2O3

Hsien-Lien Huang1,Christopher Chae1,Alexander Senckowski2,Man Hoi Wong2,Jinwoo Hwang1

The Ohio State University1,University of Massachusetts Lowell2

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9:30 AM - EQ01.10
BREAK


10:00 AM - EQ01.10.04
In Situ MOCVD Growth of Dielectric Al2O3 on β-(AlxGa1-x)2O3: Interfaces and Band Offsets

A F M Anhar Uddin Bhuiyan1,Lingyu Meng1,Zixuan Feng1,Hsien-Lien Huang1,Jinwoo Hwang1,Hongping Zhao1

The Ohio State University1

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10:15 AM - EQ01.10.05
High RT Mobility 2DEGs in a Modulation-Doped BaSnO3/SrSnO3 Heterostructure

Hanjong Paik1,2,Amit Verma3,Debdeep Jena1,Darrell Schlom1,4,5

Cornell University1,Platform for the Accelerated Realization, Analysis, and Discovery of Interface Materials (PARADIM)2,IIT Kanpur3,Kavli Institute at Cornell for Nanoscale Science4,Leibniz-Institut für Kristallzüchtung5

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10:30 AM - EQ01.10.06
MOCVD Growth of High-Quality β-(AlxGa1-x)2O3 /β-Ga2O3 Heterostructures and Superlattices Doped in a Wide Range of Electron Concentrations

Fikadu Alema1,Takeki Itoh2,Akhil Mauze2,James S. Speck2,Shubhra S. Pasayat3,Chirag Gupta3,Andrei Osinsky1

Agnitron Technology Incorporated1,University of California, Santa Barbara2,University of Wisconsin-Madison3

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10:45 AM - EQ01.10.07
Characterization of κ-([Al,In]xGa1-x)2O3 Interfaces and Quantum Wells via X-Ray Photoelectron Spectroscopy and a Potential Application for Quantum-Well Infrared Photodetectors

Thorsten Schultz1,2,Max Kneiß3,Philipp Storm3,Daniel Splith3,Holger von Wenckstern3,Marius Grundmann3,Norbert Koch1,2

Humboldt-Universität zu Berlin1,Helmholtz-Zentrum Berlin für Materialien und Energie2,Universität Leipzig3

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11:00 AM - EQ01.10.08
Strain States and Relaxation for α-(AlxGa1-x)2O3 Thin Films on Prismatic Planes of α-Al2O3 in the Full Composition Range

Max Kneiß1,Daniel Splith1,Holger von Wenckstern1,Michael Lorenz1,Thorsten Schultz2,3,Norbert Koch2,3,Marius Grundmann1

Universität Leipzig1,Humboldt-Universität zu Berlin2,Helmholtz-Zentrum für Energie und Materialien GmbH3

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EQ01.11: Oxides IV
Session Chairs
Jack Flicker
Robert Kaplar
Friday PM, May 13, 2022
Hawai'i Convention Center, Level 3, 318B

1:30 PM - EQ01.11.01
Long-Lived Metastable AlScO3 Perovskite—A Ultrawide Bandgap Hole Conductor with Low Ionization Energy of Small Hole Polarons

Cheng-Wei Lee1,2,Prashun Gorai1,2,Emily McDonald1,2,Andriy Zakutayev2,1,Vladan Stevanovic1,2

Colorado School of Mines1,National Renewable Energy Laboratory2

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1:45 PM - EQ01.11.02
Bragg Reflector Micro- and Nanowire Optical Cavities Based on Gallium Oxide—Exploring Light Confinement by Atomic Layer Deposition as an Alternative to Focused Ion Beam Patterning

Manuel Alonso-Orts1,2,Ruben Neelissen1,Marco Schowalter1,Daniel Carrasco2,Emilio Nogales2,Bianchi Méndez2,Andreas Rosenauer1,Martin Eickhoff1

University of Bremen1,Universidad Complutense de Madrid2

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2:00 PM - EQ01.11.03
3D Imaging of β-Ga2O3 Crystal Using Multiphoton-Excitation Photoluminescence

Tomoka Nishikawa1,Mayuko Tsukakoshi1,Ken Goto2,Hisashi Murakami2,Yoshinao Kumagai2,Tomoyuki Tanikawa1,Masahiro Uemukai1,Ryuji Katayama1

Osaka University1,Tokyo University of Agriculture and Technology2

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2:15 PM - EQ01.11.04
Exploring In2O3-Ga2O3 Alloys as a Transparent Conducting Oxides (TCO) for CdTe Thin Film Photovoltaics

Aniruddha Dive1,2,Joel Varley1,Soumik Banerjee2

Lawrence Livermore National Laboratory1,Washington State University2

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2:30 PM - EQ01.11
BREAK


3:00 PM - EQ01.11.05
High Aspect Ratio β-Ga2O3 FinFETs with Near-Zero Hystersis and Low On-Resistance by Matel-Assisted Chemical Etching

Xiuling Li2,1,Hsien-Chih Huang1,Zhongjie Ren2,A F M Anhar Uddin Bhuiyan3,Zixuan Feng3,Andrew Green4,Keson Chabak4,Hongping Zhao3

University of Illinois Urbana-Champaign1,The University of Texas at Austin2,The Ohio State University3,AirForce Research Laboratory4

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3:15 PM - EQ01.11.06
Atomic Layer Deposition of Aluminium Doped Zn1-xMgxO as Highly Transparent Conducting Films

Poorani Gnanasambandan1,Noureddine Adjeroud1,Renaud Leturcq1

Luxembourg Institute of Science and Technology1

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2022-05-23   Show All Abstracts

Times shown in EDT (GMT-4:00)

Symposium Organizers

Robert Kaplar, Sandia National Laboratories
Srabanti Chowdhury, Stanford University
Yoshinao Kumagai, Tokyo University of Agriculture and Technology
Julien Pernot, University of Grenoble Alpes
EQ01.14: Ultra-Wide Bandgap Materials and Devices I
Session Chairs
Yoshinao Kumagai
Monday PM, May 23, 2022
EQ01-Virtual

1:00 PM - *EQ01.14.01
AlGaN Channel HEMTs for High Voltage Applications

Farid Medjdoub1,Jash Mehta1,Idriss Abid1,Yvon Cordier2,Fabrice Semond2

IEMN-CNRS1,CRHEA2

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1:30 PM - EQ01.14.02
Defect Mediated and Diode Degradation in Wide Band-Gap AlGaN Electronics

Nicholas Baldonado1,Julia Deitz2,Boris Kiefer1

New Mexico State University1,Sandia National Laboratories2

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1:45 PM - EQ01.14.03
Ultrawide Bandgap β-Ga2O3/p-GaN Heterojunction Barrier Schottky Rectifiers for Efficient Power Electronic Applications

Dinusha Herath Mudiyanselage1,Dawei Wang1,Houqiang Fu1

Iowa State University1

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2:00 PM - EQ01.14.04
Comprehensive Design and Simulation of E-Mode β-Ga2O3 Current-Aperture Vertical Electron Transistors

Dawei Wang1,Dinusha Herath Mudiyanselage1,Houqiang Fu1

Iowa State University1

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2:15 PM - EQ01.14.06
Post-synthesis Control of Oxygen Vacancy Concentrations in Metal Oxides via Exposure to Liquid Water

Edmund Seebauer1,Heonjae Jeong1,Elif Ertekin1

University of Illinois at Urbana-Champaign1

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2:30 PM - EQ01.03.02
Large Band Gap of Insulator Clay Nanosheets

Barbara Pacakova1,Per Erik Vullum2,Jon Fossum1

Norwegian University of Science and Technology1,SINTEF Industry, NO-7034 Trondheim, Norway2

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2:35 PM - *EQ01.04.05
Progress in Inversion Channel Diamond MOSFET Technologies

Norio Tokuda1,Kazuki Kobayashi1,Xufang Zhang1,Tsubasa Matsumoto1,Takao Inokuma1,Satoshi Yamasaki1,Hiromitsu Kato2,Masahiko Ogura2,Toshiharu Makino2,Daisuke Takeuchi2,Christoph Nebel1,3

Kanazawa Univ1,National Institute of Advanced Industrial Science and Technology2,Diamond and Carbon Applications3

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