High-Performance Junction Diodes in GaN using Mg Implantation and Heterogeneous Heterojunctions

The enhanced critical electric field of wide bandgap GaN render it an attractive technology for power switching and power amplification devices. Recent improvements in epitaxy and substrate quality have made it possible to focus on the development of advanced devices with complex doping schemes and junctions. This talk will tackle two important cases: (1) vertical GaN Junction Barrier Schottky (JBS) diodes realized with Mg implantation and ultra-high pressure annealing (UHPA), as well as (2) PN junctions using III-V/GaN heterogeneous heterojunctions formed via a novel technique known as Crystal Heterogeneous Integration (CHI). In each case, it will be demonstrated that junctions with near-unity ideality factors can be achieved via careful control of the material interfaces. These results underline the promise of GaN for high performance devices, and pave the way for further innovation in device geometries.