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2008 MRS Spring Meeting & Exhibit

March 24-28, 2008 | San Francisco
Meeting Chairs: Jeffrey C. Gelpey, Robert J. Hamers, Paul Muralt, Christine A. Orme

Symposium C : Advances in GaN, GaAs, SiC, and Related Alloys on Silicon Substrates

2008-03-25   Show All Abstracts

Symposium Organizers

Tingkai Li Sharp Laboratories of America, Inc.
Joan Redwing The Pennsylvania State University
Michael Mastro U. S. Naval Research Laboratory
Edwin L. Piner Nitronex Corporation
Armin Dadgar Otto-von-Guericke-Universitaet Magdeburg and AZZURRO Semiconductors AG

Symposium Support

AIXTRON AG
C1: III-Vs on Si: Layer Transfer and Bonding Approaches
Session Chairs
Augusto Gutierrez-Aitken
Katherine Herrick
Tuesday PM, March 25, 2008
Room 2003 (Moscone West)

9:30 AM - **C1.1
Formation Of III-V Semiconductor Engineered Substrates Using Smart CutTM Layer Transfer Technology.

Fabrice Letertre 1
1 , Soitec S.A., Bernin France

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10:00 AM - C1.2
GaInP/GaAs Dual Junction Solar Cells on Ge/Si Epitaxial Templates.

Melissa Archer 1 , Daniel Law 2 , Shoghig Mesropian 2 , Andreea Boca 2 , Moran Haddad 2 , Richard King 2 , Harry Atwater 1
1 , California Institute of Technology, Pasadena, California, United States, 2 , Spectrolab Engineering, Inc., Sylmar, California, United States

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10:15 AM - C1.3
High Crystalline-quality III-V Layer Transfer onto Si.

Peng Chen 1 , Yi Jing 1 , S. Lau 1 , Dapeng Xu 2 , Luke Mawst 2 , T. Alford 3 , Charles Paulson 4 , T. Kuech 4
1 ECE, University of California, San Diego, La Jolla, California, United States, 2 Electrical and Computer Engineering Department, University of Wisconsin, Madison, Wisconsin, Madison, Wisconsin, United States, 3 School of Materials, Arizona State University, Tempe, Arizona, United States, 4 Department of Chemical and Biological Engineering, University of Wisconsin, Madison, Madison, Wisconsin, United States

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10:30 AM - C1.4
Patterned Exfoliation of GaAs Based on Masked Light Ion Implantation.

Hyung-Joo Woo 1 , Han-Woo Choi 1 , Gi-Dong Kim 1 , Wan Hong 1 , Joon-Kon Kim 1
1 , Korea Institute of Geoscience & Mineral Resources, Daejeon Korea (the Republic of)

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10:45 AM - C1.5
``III-V-in-Si" as Opposed to III-V-on-Si as an Alternative Route to Light Harvesting in Si.

Kiyoshi Kawamoto 1 , Susumu Fukatsu 1 2
1 , University of Tokyo, Tokyo Japan, 2 , Japan Science and Technology Agency (JST), Saitama Japan

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11:00 AM - *
Break

11:30 AM - **C1.6
Transistor Level Integration of Compound Semiconductor Devices and CMOS - CoSMOS.

Kenneth Elliott 1
1 , HRL Laboratories, LLC., Malibu, CA, California, United States

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12:00 PM - C1.7
GaAs-Si Hybrid Quantum Cascade Lasers.

Daniela Andrijasevic 1 , Maximilian Austerer 1 , Max Andrews 1 , Pavel Klang 1 , Werner Schrenk 1 , Gottfried Strasser 1 2
1 ZMNS, Vienna University of Technology, Vienna Austria, 2 University at Buffalo, The State University of New York, Buffalo, New York, United States

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12:15 PM - C1.8
Investigation of Blistering Phenomena in Hydrogen-Implanted GaN and AlN for Thin Film Layer Transfer Applications.

Rajendra Singh 1 , Roland Scholz 2 , Silke Christiansen 2 , Goesele Ulrich 2
1 Department of Physics, Indian Institute of Technology Delhi, New Delhi India, 2 , Max Planck Institute of Microstructure Physics, Halle Germany

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12:30 PM - C1.9
Heterogeneous Integration of Wide Band Gap Materials.

Oussama Moutanabbir 1 , Roland Scholz 1 , Silke Christiansen 1 , Ulrich Goesele 1 , Martin Chicoine 2 , Reinhard Krause-Rehberg 3 , Yves Chabal 4
1 , Max-Planck Institute of Microstructure Physics, Halle (Saale) Germany, 2 Département de Physique, Université de Montréal, Montréal, Quebec, Canada, 3 Physics, Martin-Luther-University , Halle (Saale) Germany, 4 Departments of Chemistry, Biomedical Engineering, and Physics, Rutgers University, Piscataway, New Jersey, United States

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12:45 PM - C1.10
Bulk Gallium Nitride Growth on Hydrogen-Ion Implanted Silicon Substrate.

Bing-Jung Wu 1 , Teresia Suryasindhu 1 , Adios Hu 1 , T. -H. Lee 1 2
1 Institute of Materials Science and Engineering, National Central University, Chung-Li City Taiwan, 2 National Central University, Inst. of Materials Science and Engineering, Chung-Li Taiwan

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2008-03-26   Show All Abstracts

Symposium Organizers

Tingkai Li Sharp Laboratories of America, Inc.
Joan Redwing The Pennsylvania State University
Michael Mastro U. S. Naval Research Laboratory
Edwin L. Piner Nitronex Corporation
Armin Dadgar Otto-von-Guericke-Universitaet Magdeburg and AZZURRO Semiconductors AG
C4: GaN Electronic Devices and Sensors on Si
Session Chairs
Michael Mastro
John Roberts
Wednesday AM, March 26, 2008
Room 2003 (Moscone West)

9:30 AM - **C4.1
GaN-on-Si HEMTs: From Device Technology to Product Insertion.

Wayne Johnson 1 , Sameer Singhal 1 , Allen Hanson 1 , Robert Therrien 1 , Apurva Chaudhari 1 , Walter Nagy 1 , Pradeep Rajagopal 1 , Quinn Martin 1 , Todd Nichols 1 , John Roberts 1 , Edwin Piner 1 , Isik Kizilyalli 1 , Kevin Linthicum 1
1 , Nitronex Corporation, Durham, North Carolina, United States

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10:00 AM - C4.2
Power Performance of AlGaN/GaN HEMT’s Grown on 6” Si Substrates.

Joff Derluyn 1 , Jo Das 1 , Kai Cheng 1 2 , Anne Lorenz 1 2 , Stefan Degroote 1 , Marianne Germain 1 , Staf Borghs 1
1 NEXT III-V, IMEC, Leuven Belgium, 2 ESAT, KUL, Leuven Belgium

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10:15 AM - C4.3
MOVPE Growth and Characterization of AlInN HFET Structures on Si(111).

Christoph Hums 1 , Aniko Gadanecz 1 , Carsten Baer 1 , Armin Dadgar 1 2 , Jürgen Bläsing 1 , Thomas Hempel 1 , Hartmut Witte 1 , Annette Diez 1 , Jürgen Christen 1 , Alois Krost 1
1 , Otto-von-Guericke-Universität Magdeburg, Magdeburg Germany, 2 , AZZURRO Semiconductors, Magdeburg Germany

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10:30 AM - C4.4
Growth of AlGaN/GaN HEMTs on Silicon Substrates.

Fabrice Semond 1 , Yvon Cordier 1 , Nicolas Baron 1 2 , Sylvain Joblot 1 3 , Eric Frayssinet 1 , Jean-Christophe Moreno 1 3 , Jean Massies 1
1 , CRHEA-CNRS, Valbonne France, 2 , Picogiga International, Courtaboeuf France, 3 , STMicroelectronics, Crolles France

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10:45 AM - C4.5
Growth of AlGaN/GaN HEMTs on 3C-SiC/Si(111) Substrates.

Yvon Cordier 1 , Marc Portail 1 , Sebastien Chenot 1 , Olivier Tottereau 1 , Zielinsli Marcin 2 , Thierry Chassagne 2
1 , CRHEA-CNRS, Valbonne France, 2 , NOVASIC, Le Bourget du Lac France

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11:00 AM - *
Break

11:30 AM - C4.6
High-electron-mobility AlGaN/GaN Heterostructures Grown on Si(001) by Molecular Beam Epitaxy for Microwave Applications.

Sylvain Joblot 1 2 , Yvon Cordier 2 , Fabrice Semond 2 , Philippe Vennegues 2 , Sebastien Chenot 2 , Philippe Lorenzini 2 , Marc Portail 2 , Jean Claude Gerbedoen 3 , Ali Soltani 3 , Christophe Gaquiere 3 , Jean Claude De Jaeger 3
1 , STMicroelectronics, Crolles France, 2 , CRHEA-CNRS, Valbonne, Sophia Antipolis, France, 3 , IEMN-CNRS, Villeneuve d'Ascq France

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11:45 AM - C4.7
Effects of Carbon Doping on AlGaN/GaN HEMTs Grown on Si by Ammonia MBE.

Fabrice Semond 1 2 , Haipeng Tang 1 , Soufien Haffouz 1 , Stephen Rolfe 1 , Tim Lester 1 , Jennifer Bardwell 1
1 , IMS-CNRC, Ottawa, Ontario, Canada, 2 , CRHEA-CNRS, Valbonne France

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12:00 PM - **C4.8
GaN Electrochemical Probes and MEMS on Si.

Ulrich Heinle 1 , Peter Benkart 1 , Ingo Daumiller 1 , Mike Kunze 1 , Ertugrul Sonmez 1
1 , microGaN GmbH, Ulm Germany

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12:30 PM - C4.9
Adding Diamond to GaN on Silicon Devices.

Jerry Zimmer 1
1 , sp3 Diamond Technologies, Santa Clara, California, United States

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