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2008 MRS Spring Meeting & Exhibit

March 24-28, 2008 | San Francisco
Meeting Chairs: Jeffrey C. Gelpey, Robert J. Hamers, Paul Muralt, Christine A. Orme

Symposium H : Materials Science of High-k Dielectric Stack---From Fundamentals to Technology

2008-03-26   Show All Abstracts

Symposium Organizers

Luigi Pantisano IMEC
Evgeni Gusev QUALCOMM
Martin Green National Institute of Standards and Technology
Masaaki Niwa Semiconductor Company
H5: High-k Characterization
Session Chairs
Martin Green
Masaaki Niwa
Wednesday PM, March 26, 2008
Room 2008 (Moscone West)

3:00 PM - **H5.1
Physico-chemical Characterization of Thin Oxide Films: Difficulties and Solutions.

Thierry Conard 1 , Wilfried Vandervorst 1
1 MCA, IMEC, Leuven Belgium

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3:30 PM - H5.2
Photon Stimulated Capacitance-Voltage Measurement and Characterization of High-k Dielectrics.

Oleg Kirillov 1 , Nhan Nguyen 1 , James Maslar 2 , William Kimes 2 , Weirong Jiang 1 , Kin Cheung 1 , John Suehle 1 , Curt Richter 1
1 Semiconductor Electronics Division, National Institute of Standards and Technology, Gaithersburg, Maryland, United States, 2 Process Measurements Division, National Institute of Standards and Technology, Gaithersburg, Maryland, United States

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3:45 PM - H5.3
Defect Studies of HfO2/SiO2/Si Gate Stacks by Inelastic Electron Tunneling Spectroscopy.

Eunji Kim 1 , Krishna Saraswat 2 1 , Paul McIntyre 1
1 Materials Science and Engineering, Stanford University, Stanford, California, United States, 2 Electrical Engineering, Stanford University, Stanford, California, United States

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4:00 PM - H5.4
Physical Origin and Chemical Nature of Colossal Dielectric Constant in CaCu3Ti4O12 Thin Film by Pulsed Laser Deposition.

Guochu Deng 1 , Tomoaki Yamada 1 , Zhanbing He 1 , Paul Muralt 1
1 Ceramics Laboratory, Ecole Polytechnique Federale de Lausanne, Lausanne, Vaud, Switzerland

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4:15 PM - H5
BREAK

4:30 PM - **H5.5
Physics of Schottky Barrier at Metal/high-k Interfaces.

Takashi Nakayama 1 , Ryuichi Ayuda 1 , Hirotaka Yuno 1 , Kenji Shiraishi 2
1 Department of Physics, Chiba University, Chiba Japan, 2 Graduate School of Pure and Applied Sciences, University of Tsukuba, Tsukuba Japan

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5:00 PM - H5.6
Interface Stability and Electrical Properties of ALD-Grown HfO2 Films on GeOxNy/Ge after Post-Deposition Thermal Treatment.

Yasuhiro Oshima 1 4 , Yun Sun 2 , Duygu Kuzum 3 , Krishna Saraswat 3 , Piero Pianetta 2 , Paul McIntyre 1
1 Materials Science and Engineering, Stanford University, Stanford, California, United States, 4 , Tokyo Electron U.S. Holdings, Inc., Santa Clara, California, United States, 2 , Stanford Synchrotron Radiation Laboratory, Stanford, California, United States, 3 Electrical Engineering, Stanford University, Stanford, California, United States

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5:15 PM - H5.7
Electrical and Physical Properties of ALD HfLaO for CMOS Device Application.

Wei He 1 , Sun-Jung Kim 2 , Young-Sun Kim 2 , Byung Jin Cho 1 3
1 Department of Electrical & Computer Engineering, National University of Singapore, Singapore Singapore, 2 Advanced Process Development Team, Memory Division, Samsung Electronics, seoul Korea (the Republic of), 3 Department of Electrical Engineering, KAIST, DaeJeon Korea (the Republic of)

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5:30 PM - H5.8
Abrupt Metal-Oxide/Semiconductor Interfaces through Adsorption and Reaction of HfCl4 with H2O-terminated Si(100)-2x1.

Brian Willis 1 , Dimitri Skliar 1 , Anoop Mathew 2
1 Chemical Engineering, University of Delaware, Newark, Delaware, United States, 2 Materials Science and Engineering, University of Delaware, Newark, Delaware, United States

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