No-Won Park1,Minjeong Kim1,Yunho Kim1,Jae Won Choi1,Jungmin Cho1,Hyeokjun Kwon1,Gil-Sung Kim1,Sangkwon Lee1
Chung-Ang University1
No-Won Park1,Minjeong Kim1,Yunho Kim1,Jae Won Choi1,Jungmin Cho1,Hyeokjun Kwon1,Gil-Sung Kim1,Sangkwon Lee1
Chung-Ang University1
The Seebeck coefficient is an important indicator of the thermoelectric (TE) properties of a material, so accurately measuring the Seebeck coefficient is essential. However, it is challenging to evaluate the Seebeck coefficient of a 2D film having extremely high resistance. Here, we propose a simple method to measure the intrinsic Seebeck coefficient of a 2D PtSe<sub>2</sub> thin films with high electrical resistance over 2 MΩ by two-step thermal annealing process. After two-step annealing process, the electrical resistance was decreased from ~2 MΩ to ~400 kΩ and the intrinsic Seebeck coefficient could be measured, and the value is exceeding 159 µVK<sup>-1</sup>, which is approximately 400% higher than that of single crystalline PtSe<sub>2</sub> bulk. Furthermore, the power factor of the sample was calculated up to 44 µWm<sup>-1</sup>K<sup>-2</sup>. Additionally, it was observed that the measured intrinsic Seebeck coefficient was independent of the top metal electrode. We discuss the role of thermal annealing process in high resistance 2D semiconducting films based on the atomic crystallographic characteristics and contact resistance between the film and electrode. Our findings demonstrate significant achievements in measuring and understanding the Seebeck effect of 2D transition metal dichalcogenide (TMDC) materials.