Denis Aglagul1,Jian Shi1
Rensselaer Polytechnic Institute1
Denis Aglagul1,Jian Shi1
Rensselaer Polytechnic Institute1
Ruthenium oxide (RuO<sub>2</sub>) has a well-resolved temperature-resistivity response making it a compelling choice for cryogenic temperature measurement. In this work, we report the use of pulsed laser deposition to grow RuO<sub>2</sub> thin film on various substrates such as GaAs and Au. We characterize the crystallinity of as-grown and post-annealed films by x-ray diffraction. We evaluate its temperature sensitivity, as a function of deposition conditions such as pulse energy, growth temperature, oxygen partial pressure, and substrates, with electrical transport measurements from liquid helium temperature to room temperature. By growing RuO<sub>2</sub> film on our thermal-active samples, we evaluate the thermodynamic performance of the thermal-active devices.