Abstract submission closed January 5. Authors will be notified in early February.
Please contact the symposium organizers with questions.
2D Topological materials are a new class of materials that can, thanks to their extraordinary properties, project us in the Beyond CMOS world. The symposium will cover the growth, the theoretical models on physics and the applications for 2D topological materials. The first part will focus on the growth of 2D materials. The growth of the new generation of 2D topological materials such as Stanene, Plumbene, Bismuthene or Tellurene will be presented and will have an important place. We will highlight the issues concerning the capacity to obtain layers that do not react with ambient environment using opportune protection without changing the layer properties and on their functionalization for band gap engineering. The second part of the symposium will deal with the theoretical models explaining the topological behavior. A part will be devoted to the way and the conditions for the Quantum Spin Hall effect (QSH) to take place in 2D Topological insulators. Theoretical models that will link the QSH with other properties, such as ZT (figure of merit) for Thermoelectrics (TE) materials will be highlighted. The way to decouple phonon and charge in these materials exploiting functionalization or adding defects will be pointed out in this session. In the third part of the symposium, first applications of these materials will be presented. 2D topological materials can be a game changer in different fields such as TE with large ZT (i.e. avionics, space, energy consumption reduction in new intelligent buildings), new forms of quantum computing/memories at subatomic level and beyond CMOS electronics exploiting spin transport with very low energy consumption. Abstract for applications in these fields will be strongly solicited.
Joint Sessions are being considered with QT05—2D Topological Materials—Growth, Theoretical Models and Applications.