MRS Meetings and Events


EL07.09.29 2023 MRS Fall Meeting

Enhancement of p-type Behavior of Inkjet-Printed Single-Walled Carbon Nanotube
Transistors from Phenylphosphonic acid Coating

When and Where

Nov 29, 2023
8:00pm - 10:00pm

Hynes, Level 1, Hall A



Dong Hyun Lee1,Siwon Hwang2,Bongjun Kim2,Hocheon Yoo1

Gachon University1,Sookmyung Women’s University2


Dong Hyun Lee1,Siwon Hwang2,Bongjun Kim2,Hocheon Yoo1

Gachon University1,Sookmyung Women’s University2
Single-walled carbon nanotube (SWCNT) had interest over the past decade as a high potential material due to their thermal stability and high conductivity [1-2]. In particular, SWCNTs had high carrier mobility and advantages of solution processing lead to their development for applications in electronic devices such as transistors and logic circuits [3-4]. However, the doping technology for controlling the charge carrier transport of SWCNT is still immature. The chemical doping method is a process that modulates the Schottky barrier without damaging SWCNT. In this paper, we present p-type behavior enhanced SWCNT transistor by patterning semiconductors and electrodes using inkjet printing technology and doping them with the self-assembled monolayer (SAM) material phenylphosphonic acid (PPA). The benzene rings of PPA coated on the SWCNTs without annealing process fill the voids in the channels by π-stacking interaction. As a result, SWCNTs connected through PPA form additional pathway for charge carrier transport. The p-type current of the SWCNT transistor is enhanced 4.3 times due to the improved hole injection resulting from PPA doping effect. In addition, the 10 PPA-doped SWCNT transistors increased the hole mobility by an average of 8.25 cm<sup>2</sup> V<sup>-1</sup> s<sup>-1</sup>. Finally, the positive-shifted threshold voltage of 0.55 V indicates the potential for application in depletion mode of PPA-doped SWCNT transistor.


electrical properties | ink-jet printing

Symposium Organizers

Gabriela Borin Barin, Empa
Shengxi Huang, Rice University
Yuxuan Cosmi Lin, TSMC Technology Inc
Lain-Jong Li, The University of Hong Kong

Symposium Support

Montana Instruments

Oxford Instruments WITec
Raith America, Inc.

Session Chairs

Gabriela Borin Barin
Yuxuan Cosmi Lin

In this Session

Large-Area, Pulsed Laser Deposition of MoS2/a-BN Heterostructures for Back-Gate Field Effect Transistors Applications

A Study of Transport and Optical Properties of Liquid Nitrogen-Assisted Deposition of Titanium Oxynitride Thin Films

High-Performance Electromechanical Power Generation of Lithography-Free Large-Scale MoS2 Monolayer Film Harvesters

An Investigation of Lithium and Cobalt Intercalation Method in 2D Transition Metal Dichalcogenides

Effect of Hot-Wire Oxidization and Sulfur Annealing on Layered p-MoS2 for TFT Application

Photoelectrochemical Polymerization (PEP) of EDOT for Formation of Pattered PEDOT at Specific Arbitrary Regions on Hematite (α-Fe2O3)

Spatially Resolved and In Situ Electrochemical Imaging on Two-Dimensional Materials using Scanning ElectroChemical Cell Microscopy (SECCM)

Nanowire-Based Sensor Platform for Breath Analysis

Sensitive Microwave Spectroscopy of Van der Waals Materials with Coplanar Waveguides

Ultratrace PFAS Detection using Amplifying Fluorescent Polymers

View More »

Publishing Alliance

MRS publishes with Springer Nature