MRS Meetings and Events


EL07.09.25 2023 MRS Fall Meeting

2D InGaOx Transistors Printed by Cabrera-Mott Oxidation of Liquid In-Ga Alloys

When and Where

Nov 29, 2023
8:00pm - 10:00pm

Hynes, Level 1, Hall A



Simon Agnew1,Anand Tiwari1,William Scheideler1

Dartmouth College1


Simon Agnew1,Anand Tiwari1,William Scheideler1

Dartmouth College1
Next-generation flexible electronics will require low-temperature fabrication of high-mobility 2D semiconductors. Continuous liquid metal printing (CLMP) powered by Cabrera-Mott oxidation can support this goal by offering rapid (&lt; 3 s) processing of large-area (&gt; 20 cm<sup>2</sup>) 3 nm thick ‘2D’ layers of semiconducting oxides with high mobility. However, their high intrinsic carrier density demands new mechanisms of electrostatic control. We present a strategy for controlling transport in 2D In<sub>2</sub>O<sub>3</sub> via doping with trace Ga inclusions (0.1–0.001 wt.%) in precursor metal alloys. We use these alloys to print indium gallium oxide (IGO) transistors at &lt; 200 °C with enhanced subthreshold slope and near 0 V turn on by reducing the electron concentrations 10-1000X with Ga-doping in the resultant channels (5–70 at.%). Printed 2D IGO transistors exhibit exceptional field effect mobility, with champion devices achieving up to 17 cm<sup>2</sup>/Vs and I<sub>on</sub>/I<sub>off</sub> up to 10<sup>6</sup>, with enhanced bias-stress stability over pure In<sub>2</sub>O<sub>3</sub>. Moreover, through a combination of experiments and finite element simulation, we demonstrate the synergy between 2D IGO and ultrathin high-k Al<sub>2</sub>O<sub>3</sub> dielectrics for achieving low-voltage transistors with steep switching.<br/>We apply detailed materials characterization including XPS to quantify Ga doping and oxygen stoichiometry in the 2D IGO channels and EDS to analyze the Ga-rich surface oxide of the liquid precursor alloys. IGO films were investigated by XRD to evaluate the doping threshold for amorphization and by UV-Vis to analyze modulation of the optical bandgap and effects of quantum confinement. Collectively, these results illustrate the power of liquid metal alloy printing to control 2D semiconductor electrostatics and crystallinity for developing high performance flexible electronics and next-generation display technologies.


electrical properties | thin film

Symposium Organizers

Gabriela Borin Barin, Empa
Shengxi Huang, Rice University
Yuxuan Cosmi Lin, TSMC Technology Inc
Lain-Jong Li, The University of Hong Kong

Symposium Support

Montana Instruments

Oxford Instruments WITec
Raith America, Inc.

Session Chairs

Gabriela Borin Barin
Yuxuan Cosmi Lin

In this Session

Large-Area, Pulsed Laser Deposition of MoS2/a-BN Heterostructures for Back-Gate Field Effect Transistors Applications

A Study of Transport and Optical Properties of Liquid Nitrogen-Assisted Deposition of Titanium Oxynitride Thin Films

High-Performance Electromechanical Power Generation of Lithography-Free Large-Scale MoS2 Monolayer Film Harvesters

An Investigation of Lithium and Cobalt Intercalation Method in 2D Transition Metal Dichalcogenides

Effect of Hot-Wire Oxidization and Sulfur Annealing on Layered p-MoS2 for TFT Application

Photoelectrochemical Polymerization (PEP) of EDOT for Formation of Pattered PEDOT at Specific Arbitrary Regions on Hematite (α-Fe2O3)

Spatially Resolved and In Situ Electrochemical Imaging on Two-Dimensional Materials using Scanning ElectroChemical Cell Microscopy (SECCM)

Nanowire-Based Sensor Platform for Breath Analysis

Sensitive Microwave Spectroscopy of Van der Waals Materials with Coplanar Waveguides

Ultratrace PFAS Detection using Amplifying Fluorescent Polymers

View More »

Publishing Alliance

MRS publishes with Springer Nature